TWI342385B - Reduced pressure drying apparatus - Google Patents
Reduced pressure drying apparatus Download PDFInfo
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- TWI342385B TWI342385B TW096142587A TW96142587A TWI342385B TW I342385 B TWI342385 B TW I342385B TW 096142587 A TW096142587 A TW 096142587A TW 96142587 A TW96142587 A TW 96142587A TW I342385 B TWI342385 B TW I342385B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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Description
1342385 v 九、發明說明： 【發明所屬之技術領域】 本發明係關於對半導體晶圓、液晶顯示裝置用玻璃基 板、卿(電漿顯示面板)用破璃基板、光碟用基板等之基 板施行減壓乾燥處理之減壓乾燥裝置。 ，x 【先前技術】 以往，已知有在基板之製程中，對塗布有光抗㈣等薄 膜之基板施行減壓乾燥處理之減壓乾燥裝置。減壓乾燥裝 置係將基板搬入特定之處理室内後，藉排氣果吸引排除處 理至内之氣體，將處理室内部減壓。藉此，使基板上之薄 膜中之溶媒成分氣化，使薄膜乾燥.以往之減壓乾燥裝置 之構成例如揭示於專利文獻1。 又’在以往之基板之製程中，通常將在減壓乾燥裝置被 施行減壓乾燥處理之基板，在其後逐次搬送至其他加敎 置及冷卻裝置，在此等裝置中，對基板逐次施行加熱處理 • 及冷卻處理。藉此，進一步促進基板上之薄膜之乾燥，使 薄膜硬化。 , [專利文獻Π日本特開2006-1 05 524號公報 【發明内容】 (發明所欲解決之問題） 但，在以往之裝置構成中，為防止加熱裝置之加熱時基 板上之薄臈_之溶媒成分突然沸騰’有必要在減壓乾燥裝 置充分花費時間施行減壓乾燥處理β尤其，近年來，由於 處理對象之基板尺寸逐漸大型化，減壓乾燥處理所需之時 1256I9.doc 1342385 % 間更為增長》 又，以往’如上所述，將減壓乾燥裝置與加熱裝置構成 為個別體之裝置。因此’在減壓乾燥裝置與加熱裝置之 間，有必要將基板由減屢乾燥裝置搬送至加熱裝置。從 而，難以迅速施行減壓乾燥處理與加熱處理，且在全體 上’裝置之佔有面積大為增加。1342385 v ninth invention, the present invention relates to a semiconductor wafer, a glass substrate for a liquid crystal display device, a glass substrate for a plasma display panel, a substrate for a disk, and the like. A vacuum drying apparatus for pressure drying treatment. x [Prior Art] Conventionally, there has been known a vacuum drying apparatus which performs a vacuum drying treatment on a substrate coated with a film such as a light-resistant (tetra) film in a substrate process. The vacuum drying apparatus moves the substrate into a specific processing chamber, and then sucks and removes the gas to be treated inside, and decompresses the inside of the processing chamber. Thereby, the solvent component in the film on the substrate is vaporized to dry the film. The structure of the conventional vacuum drying apparatus is disclosed, for example, in Patent Document 1. Further, in the process of the conventional substrate, the substrate which is subjected to the reduced-pressure drying treatment in the vacuum drying apparatus is usually transported to the other heating device and the cooling device one by one, and in this device, the substrate is successively performed. Heat treatment • and cooling treatment. Thereby, the drying of the film on the substrate is further promoted to harden the film. [Patent Document Π JP-A-2006-1 05 524] SUMMARY OF THE INVENTION (Problems to be Solved by the Invention) However, in the conventional device configuration, in order to prevent thinning on the substrate during heating of the heating device The solvent component suddenly boils. It is necessary to take time to perform the vacuum drying treatment in the vacuum drying apparatus. In particular, in recent years, the size of the substrate to be processed is gradually increased, and the time required for the vacuum drying treatment is 1256I9.doc 1342385%. Further growth In the past, as described above, the vacuum drying apparatus and the heating apparatus are configured as individual devices. Therefore, it is necessary to transfer the substrate from the reduced drying device to the heating device between the vacuum drying device and the heating device. Therefore, it is difficult to quickly perform the vacuum drying treatment and the heat treatment, and the area occupied by the apparatus is greatly increased.
另方面，欲在減壓乾燥裝置之處理室内設置加熱機構 時’在非加熱時，也有加熱機構之餘熱 響？虞。此種餘熱之熱的影響有時成為薄膜之突然沸駭 乾燥不均之原因，故並不理想。 本發明係鑑於此種情況而發明者，其目的在於提供可迅 速施行減壓乾燥處理與加熱處理’並在全體上減少裝置之 ，有面積’且減少對非加熱時之基板之熱的影響之減壓乾 (解決問題之技術手段）On the other hand, when a heating mechanism is to be provided in the processing chamber of the vacuum drying apparatus, when there is no heating, there is also a residual heat of the heating mechanism. Hey. The influence of such heat of the residual heat may be a cause of sudden boiling of the film and uneven drying, which is not preferable. The present invention has been made in view of such circumstances, and an object of the present invention is to provide a rapid decompression drying treatment and a heat treatment, and to reduce the total area of the apparatus and reduce the influence on the heat of the substrate during non-heating. Decompression (technical means of solving problems)
為解決上述問題，請求項1之發明㈣形成於基板主面 :薄膜減壓乾燥之減壓乾燥裝置，其特徵在於包含：處理 室，其係覆蓋基板之周帛，·支持機構，其係在前述處理室 之内部，以使主面朝向上方之狀態支持基板；減壓機構， 其係將前述處理室之内部制；及加熱機構，其係由上方 Ί，’、由别述支持機構所支持之基板；且前述加熱機構係 引述減壓機構之減壓開始’經過特定時間後，將熱施加 至基板。 請求項2之發明之特徵在於 在請求項1所記栽之減壓乾 125619.doc 燥裝置φ ^ χ χ 中，則述加熱機構係包含：燈加埶 而產生熱；及擴散板，Α係擴散由一;’、二、、係照射光 熱。 、、散由則述燈加熱器產生之 叫求項3之發明之特徵在於： 燥裝置中，、隹y 在咕求項2所記載之減壓乾 進一步包含··第1距離調節機盖 述加熱機構與基板間之距離。 〃係調節前 π求項4之發明之特徵在於： 燥裝置中，二、+，蜇， 月求項3所圮載之減壓乾 熱時，使前、fP機構係在則述加熱機構之加 &使則述加熱機構與基板徐徐接近。 月长項5之發明之特徵在於：在請求項 燥裝置中，义，+， 斤。己載之減壓乾 則边減屢機構係在前述加埶機 前述處理室内回復麼力。 …、機構之加熱時’使 :求項6之發明之特徵在於：在請求項】至5中 石己載之減壓項所 苴俜對針、+, /匕3.加熱部吹氣機構， 、糸對則述加熱機構供應氣體。 /奢求項7之發明之特徵在於：在請求们至 5己載之減壓乾燥裝置中’基板被支持於前述支持機所 前=處理室内之基板位置之溫度為支持機構時之In order to solve the above problems, the invention of claim 1 (4) is formed on the main surface of the substrate: a vacuum drying apparatus for vacuum drying of the film, characterized in that it comprises: a processing chamber covering the periphery of the substrate, and a supporting mechanism, which is attached thereto The inside of the processing chamber supports the substrate in a state in which the main surface faces upward; the pressure reducing mechanism is formed inside the processing chamber; and the heating mechanism is slid from above, ', by a support mechanism The supported substrate; and the heating mechanism refers to the start of depressurization of the pressure reducing mechanism. After a certain period of time, heat is applied to the substrate. The invention of claim 2 is characterized in that in the decompression dry 125619.doc drying device φ ^ χ 记 recorded in claim 1, the heating mechanism comprises: heating the lamp to generate heat; and diffusing the plate Diffusion is performed by one; ', two, and the system is irradiated with light and heat. The invention according to claim 3 is characterized in that: in the drying device, 隹y is further included in the decompression dryness described in item 2: · The first distance adjusting machine is described The distance between the heating mechanism and the substrate. The invention of the pre-measurement π item 4 of the tether system is characterized in that: in the drying device, when the decompression dry heat of the second, +, 蜇, and month 3 is carried out, the front and fP mechanisms are connected to the heating mechanism. Add & the heating mechanism is brought into close proximity to the substrate. The invention of the monthly term 5 is characterized by: in the requesting device, meaning, +, jin. The decompression of the load is reduced by the mechanism of the above-mentioned twisting machine in the aforementioned processing chamber. ..., the heating of the mechanism 'make: the invention of claim 6 is characterized by: in the request item] to 5 in the decompression term of the stone, the needle, +, / 匕 3. heating part blowing mechanism,糸The heating mechanism supplies gas. The invention of the luxury item 7 is characterized in that, in the vacuum drying apparatus of the requester, the substrate is supported by the support machine before the temperature of the substrate in the processing chamber is the support mechanism.
m :之發明之特徵在於：在請求項1至5中任-項所 :載之減壓乾燥裝置中，在前述處理室内部， J 由下方側冷卻基板之冷卻機構。 ^ 月长項9之發明之特徵在於：在請求項 燥裝置中，進_牛勺人& U載之減壓乾 遇步包含：第2距離調節機椹 述冷卻機構與基板間之距離。 冑構，其係調節前 125619.doc 1342385 請求項ίο之發明之特徵在於： _置中，&… 在5“項9所記載之減壓 乾裝置中1"一步包含：基板吹氣機構，其係對被支持 於前述支持機構之基板供應氣體。 乎對被支持 請求項11之發明之特徵在於：在抹 ^ 在叫求項10所記載之減壓 乾燥裝置中’剛述基板吹氣機構係 揭1偁係在別述冷卻機構之冷卻 開始，經過特定時間後，開始氣體之供應。 (發明之效果）The present invention is characterized in that, in the vacuum drying apparatus according to any one of claims 1 to 5, in the processing chamber, J is a cooling mechanism for cooling the substrate from the lower side. ^ The invention of the monthly term 9 is characterized in that, in the request drying device, the decompression step of the input device includes: the second distance adjusting device describes the distance between the cooling mechanism and the substrate.胄 , 125 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 619 It is a supply of a gas to a substrate supported by the support mechanism. The invention of the support claim 11 is characterized in that: in the vacuum drying apparatus described in claim 10, the substrate blowing mechanism is just described. The system starts the cooling of the cooling mechanism, and after a certain period of time, the supply of gas is started. (Effect of the invention)
依據請求項卜η所記載之發明，減壓乾燥裝置係包含： 處理室，其係覆蓋基板之周® ;支持機構，其係、在處理室 之内部’以使主面朝向上方之狀態支持基板；減壓機構， 其係將處理室之内部減壓；及加熱機構，其係由上方側加 熱被支持機構支持之基板。因此，減壓乾燥裝置在對基板 施行減壓乾燥處理後，不必搬送基板，即可將其加熱。因 此，可迅速削于減壓乾燥處理與加熱處a，在纟體上也可 減少裝置之佔有面積。X，因加熱機構係由上方側加熱基 板，故非加熱時對基板之熱影響較少。又，加熱機構係在 開始減壓機構之減壓，經過特定時間後，將熱施加至基 板。因此，加熱機構將熱施加至基板時，減壓乾燥處理已 進行某種程度，可一面防止薄膜之突然沸騰或加熱不均， 一面加熱基板。 尤其，依據請求項2所記載之發明，加熱機構係包含： 燈加熱器，其係照射光而產生熱；及擴散板，其係擴散由 燈加熱器產生之熱。因此，可使由燈加熱器所照射之光及 熱經由擴散板到達基板表面，均勻地加熱基板之上面。 125619.doc 又燈加熱态之非加熱時之餘熱極小’故非加熱時之餘熱 給與基板熱影響之疑慮較小^ ' 尤其，依據請求項3所記栽之發明，減壓乾燥裝置進一 步包含：帛1距離調節機構，其係調節加熱機構與基板間 之距離。因此，可調節對基板之加熱強度。 尤”依據明求項4所記載之發日月，第】距離調節機構係 在加熱機構之加熱時，使加熱機構與基板徐徐接近。因 此，可-面防止薄膜之突然沸騰或加熱不肖，一面提高對 基板之加熱效率。 尤其，依據請求項5所記載之發明，減壓機構係在加熱 機構之加熱時，使處理室内回復壓力。因此，可提高由加 熱機構對基板之熱傳播效率而高效率地加熱基板之上面。 尤其，依據請求項6所記載之發明，減壓乾燥裝置進一 步包3 ·加熱部吹氣機構’其係對加熱機構供應氣體。因 此’可降低加熱機構之餘熱。 ' 依據吻求項7所記載之發明，基板被支持於支持 機構夺之處理至内之基板位置之溫度為以下。因此， 基板被支持於支持機構時’對未乾燥之薄帛，可防止造成 突然彿騰等不均勻原因之不良影響產生。 尤其，依據凊求項8所記載之發明，減壓乾燥裝置係在 處理至内# ’進一步包含由下方側冷卻基板之冷卻機構。 ISUb 4 基板施行減壓乾燥處理及加熱處理 後不必搬送基，即可加以冷#。因此，可迅速施行減 C乾燥處理、加熱處理及冷卻處理且在全體上亦減少裝 I25619.docAccording to the invention described in the claim η, the vacuum drying apparatus includes: a processing chamber that covers the periphery of the substrate; and a support mechanism that is supported inside the processing chamber to support the main surface upward. a substrate; a pressure reducing mechanism that decompresses the inside of the processing chamber; and a heating mechanism that heats the substrate supported by the supporting mechanism from the upper side. Therefore, the vacuum drying apparatus can heat the substrate after performing the vacuum drying treatment without transferring the substrate. Therefore, it is possible to quickly cut the decompression drying treatment and the heating portion a, and also reduce the occupied area of the device on the crucible body. X, since the heating mechanism heats the substrate from the upper side, the heat resistance to the substrate during non-heating is less. Further, the heating means starts the decompression of the decompression mechanism, and after a certain period of time, heat is applied to the substrate. Therefore, when the heating means applies heat to the substrate, the vacuum drying treatment is performed to some extent, and the substrate can be heated while preventing sudden boiling or uneven heating of the film. In particular, according to the invention of claim 2, the heating mechanism includes: a lamp heater that emits light to generate heat; and a diffusion plate that diffuses heat generated by the lamp heater. Therefore, the light and heat irradiated by the lamp heater can be made to reach the surface of the substrate via the diffusion plate, and the upper surface of the substrate can be uniformly heated. 125619.doc The heat remaining in the non-heating state of the lamp is extremely small. Therefore, the residual heat of the non-heating has less concern about the thermal influence on the substrate. ^ In particular, according to the invention of claim 3, the vacuum drying apparatus further includes : 帛 1 distance adjustment mechanism, which adjusts the distance between the heating mechanism and the substrate. Therefore, the heating strength to the substrate can be adjusted. In particular, the distance adjustment mechanism is such that the heating mechanism is brought close to the substrate when the heating mechanism is heated. Therefore, the surface can prevent sudden boiling or heating of the film. In particular, according to the invention of claim 5, the pressure reducing mechanism restores pressure in the processing chamber during heating of the heating mechanism. Therefore, the heat transfer efficiency of the substrate by the heating mechanism can be increased. In particular, according to the invention described in claim 6, the vacuum drying apparatus further includes a heating unit blowing mechanism that supplies the gas to the heating mechanism. Therefore, the residual heat of the heating mechanism can be reduced. According to the invention described in the kiss item 7, the temperature at which the substrate is supported by the substrate to be supported by the support mechanism is below. Therefore, when the substrate is supported by the support mechanism, the undone thin film can prevent suddenness. In particular, according to the invention described in claim 8, the vacuum drying apparatus is processed until # ' Further includes a cooling mechanism for cooling the substrate from the lower side. The ISUb 4 substrate can be cooled after it is subjected to vacuum drying and heat treatment without having to transport the substrate. Therefore, the C drying treatment, the heat treatment, and the cooling treatment can be quickly performed. And also reduce the installation of I25619.doc
置之佔有面積。5 A 尤其 步包含 之距離 尤其 步包含 冷卻時，對基板之/卻機構由下方側冷卻基板，故在非 町耵丞板之熱影響較少。 月求項9所記載之發明，減壓乾燥裝置進一 第2距離調節機構，其係調節冷卻機構與基板間 因此，可調節對基板之冷卻強度。 依據。a求項10所記載之發明’減壓乾燥裝置進一 基板人氣機構，其係對被支持於支持機構之基板 供應氣體。因此’可更迅速且均钱冷卻基板之上面側。 尤其’、依據請求項U所記載之發明，基板吹氣機構係在 開始冷部機構之冷卻’經過特定時間後，開始氣體之供 應因此，可更緩慢地冷卻基板，進一步降低冷卻不均之 產生。 【實施方式】 以下’一面參照圖式，一面說明本發明之較佳實施型 態0 <1.減壓乾燥裝置之全體構成> 圖1係本發明之一實施型態之減壓乾燥裝置1之縱剖面 圖。在圖1中，也概念地表示連接於減壓乾燥裝置1之吸排 乳糸統及驅動系統之構成。此減壓乾燥裝置1係在選擇地 蝕刻液晶顯示裝置用之角形玻璃基板（以下僅稱「基板」）9 之表面之光微影步驟中，對抗蝕膜塗布後之基板9施行減 壓乾燥處理及其後續之加熱•冷卻處理用之裝置。如圖1 所示’減壓乾燥裝置1係包含處理室10、基板保持部20、 加熱部30、冷卻部40、供氣部50、及排氣部60。 125619.doc 1342385 處理室l 〇係内部具有對基板施行減壓乾燥處理、加熱广 理及冷卻處理用之處理空間之耐壓容器。處理室1〇具有可 互相分離之基部11與蓋部12。基部11被固定設置於裝置架 (未圖示）上。又，在蓋部12’連接在圖1中概念地表示之升 降機構12a，驅動升降機構12a時，可使蓋部12對基部u向 上下升降移動。使蓋部12下降時，基部U與蓋部12相抵接 而成一體’在其内部形成基板9之處理空間。另一方面， 使蓋部12上升時’可使處理室1〇開放，處於可在處理室⑺ 之内部與外部之間搬送基板9之狀態。 在基部11上面之周緣部，設有以矽橡膠等構成之〇形環 13使蓋部12下降時’基部π之上面與蓋部12之下面被〇 形環丨3所密閉’使處理室10之内部之處理空間成為氣密狀 態。 基板保持部20係在處理室1 〇之内部保持基板9用之機 構。基板保持部20具有複數基板保持銷21，使各基板保持 銷21之頭部抵接於基板9之下面，而將基板9支持成水平姿 勢。複數之基板保持銷2 1立設於配置於處理室1 〇之外部之 1個支持構件22上，分別貫通基部11及後述之冷卻板41而 突出至處理室1〇之内部。 又’在支持構件22,連接在圖1中概念地表示之升降機 構23。因此’驅動升降機構23時，可使支持構件22及複數 基板保持銷21成一體向上下升降移動。減壓乾燥裝置1 一 面將基板9保持於複數基板保持銷2丨上，一面驅動升降機 構23時’可調節在處理室10内之基板9之高度位置。 125619.doc -12- 1342385 加熱部30係在處理室10内加熱被保持於基板保持部20之 基板9之上面用之機構。加熱部30具有成為加熱源之複數 支棒狀燈加熱器31、及使燈加熱器31所照射之光及熱擴散 之擴散板32。複數之燈加熱器31係經由特定之夾具（省略 圖示）固定於處理室1〇之蓋部12之下面側，排列成水平（與 圖1之紙面正交之方向）且全體上覆蓋基板9之上方。燈加 熱态3 1之開關性能優異，照射時雖會對基板9施加大的熱 量，但停止後之餘熱極少。又，燈加熱器3丨係配置於比基 板9更罪近上方側。因此，停止燈加熱器31之微量之餘熱 對基板9造成之影響之疑慮也少。 擴散板32係經由特定之夾具（省略圖示）固定於處理室 之蓋部12之下面側’水平被配置於複數之燈加熱器31與基 板9之間》擴散板32例如係由石英玻璃所構成。驅動燈加 熱器3 1時’燈加熱器3 1所照射之光及熱一面經由擴散板32 被均勻化’ 一面到達基板9之表面，以加熱基板9之上面。 又’將基板9保持於複數之基板保持銷2 1上，驅動上述升 降機構23時’可使基板9與擴散板32間之距離發生變化。 減壓乾燥裝置1係藉如此使基板9與擴散板32間之距離發生 變化而調節對基板9之加熱強度。 冷卻部40係在處理室1 〇内冷卻保持於基板保持部2〇之基 板9用之機構。冷卻部40具有固定地被安裝於處理室1〇之 • ♦ 基部11之冷卻板41，在冷卻板41之内部，形成通冷卻水用 之冷卻水路42。冷卻水路42之上游側之端部經由配管43a 及開閉閥43b連接至冷卻水供應源43c。又，冷卻水路42之 125619.doc •13- 1342385 下游側之端部經由配管43d連接至排液管線。因此，開放 開閉閥43b時，可將冷卻水由冷卻水供應源43c供應至冷卻 水路42 ’以冷卻冷卻板4 1。而，被冷卻水低溫化之冷卻板 41可吸收由基板9放射之熱，藉以冷卻基板9。 將基板9保持於複數之基板保持銷2 1上，驅動上述之升 降機構2 3時，可使基板9與冷卻板4 1間之距離發生變化。 如此，減壓乾燥裝置1可藉改變基板9與冷卻板41之間之距 離’以調節對基板9之冷卻強度。又，冷卻板41係配置於 比基板9更靠近下方側。因此，在非冷卻時，冷卻板4丨對 基板9造成之熱的影響較少。 供氣部50係將氮氣供應至處理室10内用之配管系統。供 氣部50具有形成於處理室1〇之蓋部12之喷出部51a、51b、 51c、與將氤氣供送至此等噴出部5U、51b、51c用之配管 部52。配管部52係由複數配管52a、52b、52c、53d、複數 開閉閥52e、52f、52g、及氮氣供應源52h組合所構成。 喷出部5 la、5 lb、5 lc分別連接配管52a、52b、52c，在 各配管52a、52b、52c之路徑途中，介插著開閉閥52e、 52f、52g。又，配管52a、52b、52c之上游側端部連接於j 個配管52d，在配管52d之更上遊側之端部連接氮氣供應源 52h。因此’開放開閉閥52e、52f、52g時’可分別將氮氣 由氮氣供應源52h供應至喷出部5ia、51b、51c，由各噴出 部51a、51b、51c向處理室1〇内部噴出氮氣。 喷出部51a、51b、51c中，噴出部51a&51c在燈加熱器 31之上方側设有噴出口。因此，由噴出部5ia、ye噴出之 I25619.doc -14- 1342385 氣氣具有對燈加熱器31及擴散板32噴附而冷卻燈加熱器31 及擴散板32之效果。又’喷出部51b係貫通擴散板32而延 設至擴散板32之下面側，在擴散板32之下方側設有噴出 口《>因此，由喷出部51b喷出之氮氣具有對基板9之上面噴 附而冷卻基板9之效果。喷出部511)係向基板9之中心位置 喷出氮氣。因此，由喷出部Slb喷出之氮氣會沿著基板9之 上面而由中心位置向外周侧擴散，有效冷卻基板9之全 體。 排氣部60係吸引排出處理室丨〇内之氣體用之配管系統。 排氣部6〇具有形成於處理室10之基部丨丨之排氣口61&、 61b、與將由此等排氣口 6】a、^卟吸引之氣體供送至排氣 官線用之配管部62。配管部62係由複數配管62a、62b、 62c、開閉閥62d、及排氣泵62e組合所構成。 在排氣口 61a、61b，分別連接配管62a、62b，配管 62a、62b之下游側之端部合流而成為一個配管^又’ 在配管62c之路徑途中，介插著開閉閥62d與排氣泵626， 在配管62c之更下游側之端部連接著排氣管線。因此，開 放開閉閥62d，並驅動排氣泵62e時，處理室丨〇内之氣體會 被排氣口 61a、61b吸引而經由配管部62向排氣管線被排出。 排氣泵626可調節其排氣力。調節排氣泵62e之排氣力 時，強力吸引處理室1〇内之氣體而可切換將處理室ι〇内減 壓之狀態、與不大幅將處理室10内減壓而排氣之狀態。 又，減壓乾燥裝置1具備有控制上述各部之動作之控制 部70。圖2係表示減壓乾燥裝置丨之上述各部與控制部7〇之 125619.doc 15 1342385 連接構成之區塊圖。如圖2所示，控制部7〇係電性連接於 上述之升降機構12a、23、燈加熱器31、開閉閥^^ 52e、52卜52g、62d'及排氣泵62e，控制此等之動作。 控制部70例如係由具有CPU及記憶體之電腦所構成依照 女裝於電腦之程式使電腦執行動作，以執行上述各部之控 制。 < 2·減壓乾燥裝置之動作>The area occupied. 5 A The distance included in the special step In particular, when the cooling is performed, the substrate is cooled by the lower side of the substrate, so the thermal influence on the non-cho board is less. According to the invention of claim 9, the vacuum drying apparatus is further provided with a second distance adjusting mechanism for adjusting the cooling mechanism between the cooling mechanism and the substrate, thereby adjusting the cooling strength of the substrate. in accordance with. The invention described in claim 10, wherein the vacuum drying apparatus is incorporated in a substrate flow mechanism for supplying a gas to a substrate supported by the support mechanism. Therefore, the upper side of the substrate can be cooled more quickly and evenly. In particular, according to the invention described in the claim U, the substrate blowing mechanism starts the supply of gas after a certain period of time has elapsed after the cooling of the cold portion mechanism is started. Therefore, the substrate can be cooled more slowly, thereby further reducing the occurrence of uneven cooling. . [Embodiment] Hereinafter, a preferred embodiment of the present invention will be described with reference to the drawings. [1. Overall Configuration of a Vacuum Drying Apparatus] FIG. 1 is a vacuum drying apparatus according to an embodiment of the present invention. 1 longitudinal section. In Fig. 1, the configuration of the suction and discharge nipple and the drive system connected to the vacuum drying apparatus 1 is also conceptually shown. In the vacuum drying apparatus 1 for selectively etching the surface of the angled glass substrate (hereinafter simply referred to as "substrate") 9 for a liquid crystal display device, the substrate 9 after the resist coating is subjected to a vacuum drying treatment. And its subsequent heating and cooling treatment devices. As shown in FIG. 1, the vacuum drying apparatus 1 includes a processing chamber 10, a substrate holding portion 20, a heating portion 30, a cooling portion 40, an air supply portion 50, and an exhaust portion 60. 125619.doc 1342385 Treatment chamber l A pressure-resistant container having a processing space for vacuum drying, heating, and cooling treatment on a substrate. The processing chamber 1 has a base portion 11 and a lid portion 12 which are separable from each other. The base portion 11 is fixedly disposed on a device frame (not shown). Further, when the lid portion 12' is connected to the lift mechanism 12a conceptually shown in Fig. 1, when the lift mechanism 12a is driven, the lid portion 12 can be moved up and down with respect to the base portion u. When the lid portion 12 is lowered, the base portion U and the lid portion 12 are brought into contact with each other to form a processing space in which the substrate 9 is formed. On the other hand, when the lid portion 12 is raised, the processing chamber 1 can be opened, and the substrate 9 can be conveyed between the inside and the outside of the processing chamber (7). At the peripheral portion of the upper surface of the base portion 11, a dome-shaped ring 13 made of ruthenium rubber or the like is provided to lower the lid portion 12, and the upper surface of the base portion π and the lower surface of the lid portion 12 are sealed by the dome-shaped ring ' 3 to make the processing chamber 10 The internal processing space becomes airtight. The substrate holding portion 20 is a mechanism for holding the substrate 9 inside the processing chamber 1A. The substrate holding portion 20 has a plurality of substrate holding pins 21 such that the head portions of the substrate holding pins 21 abut against the lower surface of the substrate 9, and the substrate 9 is supported in a horizontal posture. A plurality of substrate holding pins 2 1 are erected on one of the support members 22 disposed outside the processing chamber 1 , and protrude through the base portion 11 and a cooling plate 41 to be described later, and protrude into the inside of the processing chamber 1 . Further, in the support member 22, the elevator mechanism 23 conceptually shown in Fig. 1 is connected. Therefore, when the elevating mechanism 23 is driven, the support member 22 and the plurality of substrate holding pins 21 can be integrally moved up and down. The vacuum drying apparatus 1 holds the substrate 9 on the plurality of substrate holding pins 2, and adjusts the height position of the substrate 9 in the processing chamber 10 when the lifting mechanism 23 is driven. 125619.doc -12- 1342385 The heating unit 30 is a mechanism for heating the upper surface of the substrate 9 held by the substrate holding unit 20 in the processing chamber 10. The heating unit 30 has a plurality of rod-shaped lamp heaters 31 serving as heating sources, and a diffusing plate 32 for diffusing light and heat emitted from the lamp heater 31. The plurality of lamp heaters 31 are fixed to the lower surface side of the lid portion 12 of the processing chamber 1 via a specific jig (not shown), arranged horizontally (in a direction orthogonal to the sheet surface of FIG. 1), and covered with the entire substrate 9 Above. The lamp heating state 3 1 has excellent switching performance, and a large amount of heat is applied to the substrate 9 during irradiation, but the residual heat after stopping is extremely small. Further, the lamp heater 3 is disposed closer to the upper side than the substrate 9. Therefore, there is little doubt that the residual heat of the lamp heater 31 is stopped to affect the substrate 9. The diffusion plate 32 is horizontally disposed between the plurality of lamp heaters 31 and the substrate 9 via a specific jig (not shown) fixed to the lower surface side of the lid portion 12 of the processing chamber. The diffusion plate 32 is, for example, a quartz glass. Composition. When the lamp heater 31 is driven, the light and the heat irradiated by the lamp heater 31 are uniformized by the diffusion plate 32, and the surface of the substrate 9 is reached to heat the upper surface of the substrate 9. Further, when the substrate 9 is held on the plurality of substrate holding pins 2 1 and the above-described raising and lowering mechanism 23 is driven, the distance between the substrate 9 and the diffusion plate 32 can be changed. The vacuum drying apparatus 1 adjusts the heating strength of the substrate 9 by changing the distance between the substrate 9 and the diffusion plate 32 in this manner. The cooling unit 40 is a mechanism for cooling and holding the substrate 9 of the substrate holding unit 2 in the processing chamber 1 . The cooling unit 40 has a cooling plate 41 fixedly attached to the base portion 11 of the processing chamber 1 and a cooling water passage 42 for cooling water is formed inside the cooling plate 41. The upstream side of the cooling water passage 42 is connected to the cooling water supply source 43c via the pipe 43a and the opening and closing valve 43b. Further, the end portion of the cooling water passage 42 of 125619.doc • 13-1342385 is connected to the drain line via the pipe 43d. Therefore, when the opening and closing valve 43b is opened, the cooling water can be supplied from the cooling water supply source 43c to the cooling water passage 42' to cool the cooling plate 41. On the other hand, the cooling plate 41 which is cooled by the cooling water absorbs the heat radiated from the substrate 9, thereby cooling the substrate 9. When the substrate 9 is held on the plurality of substrate holding pins 2 1 and the above-described raising and lowering mechanism 2 3 is driven, the distance between the substrate 9 and the cooling plate 41 can be changed. Thus, the vacuum drying apparatus 1 can adjust the cooling strength of the substrate 9 by changing the distance between the substrate 9 and the cooling plate 41. Further, the cooling plate 41 is disposed on the lower side than the substrate 9. Therefore, the cooling plate 4 影响 has less influence on the heat caused by the substrate 9 when it is not cooled. The air supply unit 50 supplies nitrogen gas to the piping system for use in the processing chamber 10. The gas supply unit 50 has discharge portions 51a, 51b, and 51c formed in the lid portion 12 of the processing chamber 1 and a piping portion 52 for supplying helium gas to the discharge portions 5U, 51b, and 51c. The piping portion 52 is composed of a combination of a plurality of pipes 52a, 52b, 52c, and 53d, a plurality of opening and closing valves 52e, 52f, and 52g, and a nitrogen gas supply source 52h. The discharge portions 5 la, 5 lb, and 5 lc are connected to the pipes 52a, 52b, and 52c, respectively, and the opening and closing valves 52e, 52f, and 52g are inserted in the middle of the paths of the pipes 52a, 52b, and 52c. Further, the upstream end portions of the pipes 52a, 52b, and 52c are connected to the j pipes 52d, and the nitrogen supply source 52h is connected to the upstream side of the pipes 52d. Therefore, when the opening and closing valves 52e, 52f, and 52g are opened, nitrogen gas is supplied from the nitrogen gas supply source 52h to the discharge portions 5ia, 51b, and 51c, respectively, and the respective discharge portions 51a, 51b, and 51c discharge nitrogen gas into the inside of the processing chamber 1b. Among the discharge portions 51a, 51b, and 51c, the discharge portions 51a & 51c are provided with discharge ports on the upper side of the lamp heater 31. Therefore, the I25619.doc -14 - 1342385 air gas discharged from the discharge portions 5ia, ye has an effect of spraying the lamp heater 31 and the diffusion plate 32 to cool the lamp heater 31 and the diffusion plate 32. Further, the "discharge portion 51b extends through the diffusion plate 32 and extends to the lower surface side of the diffusion plate 32, and the discharge port "> is provided below the diffusion plate 32. Therefore, the nitrogen gas ejected from the discharge portion 51b has a counter substrate. The effect of cooling the substrate 9 by spraying on top of 9. The discharge portion 511) discharges nitrogen gas toward the center of the substrate 9. Therefore, the nitrogen gas ejected from the ejecting portion S1b is diffused from the center portion to the outer peripheral side along the upper surface of the substrate 9, and the entire substrate 9 is effectively cooled. The exhaust unit 60 is a piping system for sucking gas discharged into the processing chamber. The exhaust portion 6A has an exhaust port 61&, 61b formed at the base portion of the processing chamber 10, and a pipe for supplying the gas sucked by the exhaust ports 6a and 卟 to the exhaust gas line. Section 62. The piping portion 62 is composed of a combination of a plurality of pipes 62a, 62b, and 62c, an opening and closing valve 62d, and an exhaust pump 62e. The exhaust pipes 61a and 61b are connected to the pipes 62a and 62b, respectively, and the downstream end portions of the pipes 62a and 62b are merged to form one pipe. In the middle of the path of the pipe 62c, the opening and closing valve 62d and the exhaust pump are inserted. 626, an exhaust line is connected to an end portion on the downstream side of the pipe 62c. Therefore, when the opening and closing valve 62d is opened and the exhaust pump 62e is driven, the gas in the processing chamber is sucked by the exhaust ports 61a and 61b and discharged to the exhaust line via the piping portion 62. The exhaust pump 626 can adjust its exhaust force. When the exhaust force of the exhaust pump 62e is adjusted, the gas in the processing chamber 1 is strongly sucked, and the state in which the pressure in the processing chamber is reduced and the state in which the inside of the processing chamber 10 is not decompressed and exhausted can be switched. Further, the reduced-pressure drying device 1 is provided with a control unit 70 that controls the operation of each of the above-described units. Fig. 2 is a block diagram showing the connection between the above-described respective portions of the reduced-pressure drying device and the control unit 7125619.doc 15 1342385. As shown in Fig. 2, the control unit 7 is electrically connected to the above-described elevating mechanisms 12a and 23, the lamp heater 31, the opening and closing valves 52e, 52b, 52g, 62d' and the exhaust pump 62e, and controls these. action. The control unit 70 is configured by, for example, a computer having a CPU and a memory, and the computer is operated in accordance with a program of the women's computer to execute the control of each of the above units. < 2·Operation of vacuum drying device>
接著，一面參照圖3之流程圖及圖4〜圖8之動作狀態圖’ 說明有關距有上述構成之減壓乾燥裝置1之動作。又，以 下說明之動作係透過控制部7〇控制上述之升降機構12a ' 23、燈加熱器 31、開閉閥 43b、52e、52f、52g、62d、及 排氣泵62e等之動作而執行。Next, the operation of the vacuum drying apparatus 1 having the above configuration will be described with reference to the flowchart of Fig. 3 and the operation state diagrams of Figs. 4 to 8. Further, the operation described below is executed by the control unit 7 to control the operations of the above-described elevating mechanism 12a'23, the lamp heater 31, the on-off valves 43b, 52e, 52f, 52g, 62d, and the exhaust pump 62e.
在此減壓乾燥裝置1中，處理基板9時，首先，將上面塗 布光抗蝕膜之基板9搬入處理室1〇内（步驟S1，圖4之狀 態），具體而言，首先’減壓乾燥裝置i藉升降機構12a使 處理室10之蓋部12上升。而’藉特定之搬送機器人8〇將基 板9搬入處理室1〇内部，將基板9載置於複數基板保持銷21 上。基板9之搬入完畢時’搬送機器人向處理室之外 部退避’減壓乾燥裝置1使處理室丨0之蓋部12下降而密閉 處理室10内部。 在此’搬入基板9時之處理室1〇内之溫度（更正確言之， 在處理室10内，載置基板9之位置之溫度）過高時，基板9 之上面之未乾燥之光抗蝕膜會被加熱而發生突然沸騰，導 致基板9之上面發生處理不均。因此，在搬入基板9時，最 125619.doc •16- 1342385 好預先將處理室ίο内之溫度降低某種程度。表丨係表示在 本實施型態之減壓乾燥裝置丨中，調查搬入基板9時之處理 至10内之溫度、與處理後之基板9之表面狀態之關係之結 果。在表1中，「〇」表示處理後之基板9之表面並未確認有 處理不均，「△」表示處理後之基板9之表面局部地確認有 處理不均，「X」表示基板9之表面全面地確認有處理不 均。由表1之結果，可知：將基板9載置於基板保持銷21上 時’處理室10内之溫度較好為預先設定於4〇。〇以下，更好 為預先設定於35°C以下。 [表1]In the vacuum drying apparatus 1, when the substrate 9 is processed, first, the substrate 9 on which the photoresist film is applied is carried into the processing chamber 1 (step S1, the state of FIG. 4). Specifically, first, the pressure is reduced. The drying device i raises the lid portion 12 of the processing chamber 10 by the elevating mechanism 12a. On the other hand, the substrate 9 is carried into the processing chamber 1 by a specific transfer robot 8 and the substrate 9 is placed on the plurality of substrate holding pins 21. When the loading of the substrate 9 is completed, the transfer robot is evacuated to the outside of the processing chamber. The vacuum drying device 1 lowers the lid portion 12 of the processing chamber 丨0 and closes the inside of the processing chamber 10. Here, when the temperature in the processing chamber 1 when the substrate 9 is carried in (more precisely, the temperature at the position where the substrate 9 is placed in the processing chamber 10) is too high, the undried light resistance on the upper surface of the substrate 9 The etching film is heated to cause sudden boiling, resulting in uneven processing on the substrate 9. Therefore, when loading the substrate 9, the most 125619.doc •16-1342385 is lowered in advance to some extent in the processing chamber ίο. In the vacuum drying apparatus of the present embodiment, the relationship between the temperature in the process of loading the substrate 9 and the surface state of the substrate 9 after the treatment is examined. In Table 1, "〇" indicates that processing unevenness was not confirmed on the surface of the substrate 9 after the treatment, "△" indicates that the surface of the substrate 9 after the treatment was partially confirmed to have uneven processing, and "X" indicates the surface of the substrate 9. Comprehensively confirmed that there is uneven processing. As a result of Table 1, it is understood that when the substrate 9 is placed on the substrate holding pin 21, the temperature in the processing chamber 10 is preferably set to 4 Torr in advance. 〇 Below, it is better to set it to 35 ° C or less in advance. [Table 1]
處理室内溫度 23〇C 30°C 35〇C 40°C 45〇C 結果 〇 Ο Ο Δ X 其次’減壓乾燥裝置開始施行處理室1 〇内之減壓（步驟 S2，圖5之狀態）’具體而言’減壓乾燥裝置！開放排氣部 60之開閉閥62d’並驅動排氣果62e，由處理室1〇内部之排 氣口 6 1 a、6 1 b強制排氣，以減壓處理室丨〇内部。減壓處理 室10内部時，可使塗布於基板9之表面之光抗蝕膜所含之 溶媒成分氣化。藉此’使基板9之表面上之光抗蝕膜乾燥。 圖9係處理室10内之壓力變化之圖。減壓乾燥裝置1係在 減壓剛開始後之一定時間之間，將排氣泵62e之排氣力設 定於較弱值。藉此，如圖9中之T1所示，緩慢地使處理室 10内部減壓。而，在減壓開始經過一定時間後，減壓乾燥 裝置1使排氣泵62e之排氣力上升，如圖9中之T2所示，強 力地使處理室10内部減壓。如此，減壓乾燥裝置1係分2階 125619.doc 1342385 段使處理室i 〇内部減壓。因此 之遷力變4 ’避免基板9上之光抗姓膜所含之溶媒成分突 然沸騰。Treatment room temperature 23〇C 30°C 35〇C 40°C 45〇C Result 〇Ο Δ Δ X Next 'Decompression drying device starts to decompress in treatment chamber 1 (step S2, state of Figure 5)' Specifically, 'decompression drying device! The opening and closing valve 62d' of the exhaust unit 60 is opened to drive the exhaust gas 62e, and the exhaust ports 6 1 a and 6 1 b inside the processing chamber 1 are forcibly exhausted to decompress the inside of the chamber. When the inside of the chamber 10 is reduced in pressure, the solvent component contained in the photoresist film applied on the surface of the substrate 9 can be vaporized. Thereby, the photoresist film on the surface of the substrate 9 is dried. Figure 9 is a graph of pressure changes in the processing chamber 10. The vacuum drying apparatus 1 sets the exhaust force of the exhaust pump 62e to a weak value for a certain period of time immediately after the start of the pressure reduction. Thereby, as shown by T1 in Fig. 9, the inside of the processing chamber 10 is slowly depressurized. On the other hand, after a certain period of time has elapsed since the start of the pressure reduction, the decompressing and drying device 1 raises the exhausting force of the exhaust pump 62e, and as shown by T2 in Fig. 9, the inside of the processing chamber 10 is strongly depressurized. Thus, the vacuum drying apparatus 1 is divided into two stages of 125619.doc 1342385 to depressurize the inside of the processing chamber i. Therefore, the shifting force is changed to 4' to prevent the solvent component contained in the photoreceptor film on the substrate 9 from suddenly boiling.
31，經由擴散板32均勻地加熱基板9之上面。藉此，使基 板9^上之光抗姓膜所含之溶媒成分升溫’進一步促進溶媒 成分之氣化。如此，減壓乾燥裝置丨併用處理空間之減壓 與對基板9之加熱，以提高光抗蝕膜之乾燥效率。 八後減壓乾燥裝置1使排氣泵62e之排氣力降低，並開 放供氣部之開閉閥52e、52f、52g，將氮氣供應至處理室 内。藉此，如圖9中之T3所示，使處理室1〇内部回復略 低於常壓Po略低之壓力（例如，U104〜lxl〇5 pa)。而，減31, the upper surface of the substrate 9 is uniformly heated via the diffusion plate 32. Thereby, the temperature of the solvent component contained in the light-resistance film on the substrate 9 is increased, and the vaporization of the solvent component is further promoted. Thus, the vacuum drying apparatus 丨 uses the pressure reduction of the processing space and the heating of the substrate 9 to improve the drying efficiency of the photoresist film. The eight-pressure reducing and drying device 1 lowers the exhausting force of the exhaust pump 62e, and opens and closes the opening and closing valves 52e, 52f, and 52g of the air supply portion to supply the nitrogen gas into the processing chamber. Thereby, as shown by T3 in Fig. 9, the inside of the processing chamber 1 is returned to a pressure slightly lower than the normal pressure Po (e.g., U104 to lxl 〇 5 pa). And, minus
可防止處理室1 〇内之急遽 在減壓開始經過特定時間後，減壓乾燥裝置卜面繼續 施行處理室10内之減壓，一面開始基板9之加熱(步驟⑴ 圖6之狀態），具體而言，減壓乾燥裝置！驅動燈加熱器 壓乾燥裝置1係在使處理室10内之壓力上升之狀態，繼續 燈加熱器3 I之加熱。 處理室10内之壓力上升時，可提高由燈加熱器31對基板 9之熱之傳播效率。因此，基板9之上面可有效被加熱，可 進—步進行光抗蝕膜中之溶媒成分之氣化。又，在此，繼 續進行由處理室10之排氣，故由光抗蝕膜氣化之溶媒成分 會迅速被排出至處理室丨〇之外部。因此，處理室1〇内 ”、、 被溶媒成分污染之虞β又，在此時點，光抗蝕膜之乾燥已 進行某種裎度，因此，即使強力地將基板9之上面加熱， 光*抗餘膜中之溶媒成分也無突然沸騰之虞。 125619.doc 1342385 又 U板9時，斷續地或連續地驅動基 之升降機構23，使美虹〇 便基板9徐徐上升。藉此，使對基板9之加 熱之強度（施加至基板9之熱量）徐徐上升，-面防止溶媒成 /刀之犬然彿騰及加熱不均’―面提高加熱效率。由於在燈 加熱器31與基板9之間酎 ]配置有擴政板32 ’故由光抗蝕膜氣 化之溶媒成分並無附著於燈加熱器31而污染燈加熱器31之 表面之虞。It is possible to prevent the urgency in the processing chamber 1 from being squeaked for a certain period of time after the start of the decompression, and the decompression drying device is continuously subjected to the decompression in the processing chamber 10, and the heating of the substrate 9 is started (the state of the step (1) Fig. 6). In terms of vacuum drying device! Driving Lamp Heater The pressure drying device 1 continues the heating of the lamp heater 3 I in a state where the pressure in the processing chamber 10 is raised. When the pressure in the processing chamber 10 rises, the heat propagation efficiency of the substrate 9 by the lamp heater 31 can be improved. Therefore, the upper surface of the substrate 9 can be efficiently heated, and the vaporization of the solvent component in the photoresist film can be carried out step by step. Further, since the exhaust gas from the processing chamber 10 is continued, the solvent component vaporized by the photoresist film is quickly discharged to the outside of the processing chamber. Therefore, in the processing chamber 1", the 虞β contaminated with the solvent component, at this point, the drying of the photoresist film is performed to some extent, and therefore, even if the upper surface of the substrate 9 is strongly heated, the light* The solvent component in the anti-remaining film also has no sudden boiling. 125619.doc 1342385 When the U plate is 9 o'clock, the base lifting mechanism 23 is intermittently or continuously driven to make the Meihong squatting substrate 9 rise gradually. The strength of the heating of the substrate 9 (the amount of heat applied to the substrate 9) is gradually increased, and the surface is prevented from increasing the heating efficiency by the solvent formation/knife unevenness and heating. Between 9 and 9] the expansion board 32 is disposed. Therefore, the solvent component vaporized by the photoresist film does not adhere to the lamp heater 31 and contaminates the surface of the lamp heater 31.
特定時間之加熱結束肖，減$乾燥I置1停止燈加熱器 3 1而結束基板9之加熱。燈加熱器3丨之開關性能優異，且 在處理室10内，配置於比基板9更靠近上方側。因此，停 止燈加熱器31後之餘熱對基板9造成之影響之疑慮也少。 尤其’在下次之基板搬入時’燈加熱器31之餘熱因熱對流 傳達至基板9而加熱基板9之疑慮較少。At the end of the heating of the specific time, the drying of the substrate 9 is terminated by reducing the drying time by 1 to stop the lamp heater 3 1 . The lamp heater has excellent switching performance and is disposed above the substrate 9 in the processing chamber 10. Therefore, there is little doubt that the residual heat after stopping the lamp heater 31 affects the substrate 9. In particular, when the substrate is carried in the next time, the heat remaining in the lamp heater 31 is transmitted to the substrate 9 due to heat convection, and the substrate 9 is heated.
接者’減壓乾燦裝置1開始施行冷卻部4 〇對基板9之冷卻 (步驟S4 ’圖7之狀態），具體而言，減壓乾燥裝置1係開放 開閉閥43b，將冷卻水供應至冷卻板4 1内之冷卻水路42， 以冷卻冷卻板41。而，使被冷卻之冷卻板4 1吸收由基板9 放射之熱，以冷卻基板9。 在冷卻處理時，減壓乾燥裝置1也繼續執行由噴出部 51a、51b、51c之氮氣之噴出。由喷出部51b喷出之氮氣喷 附在基板9之上面，以促進基板9之冷卻。因此，基板9之 上面側可更迅速且均勻地被冷卻。又’由喷出部5 1 a及5 1 c 喷出之氮氣係被喷附至燈加熱器31及擴散板32’以促進燈 加熱器31及擴散板32之冷卻。因此’可進一步降低燈加熱 1256I9.doc !9 1342385 器31及擴散板32之餘熱，更均勻地冷卻基板9。The receiver's decompression drying device 1 starts to perform cooling of the substrate 7 by the cooling unit 4 (step S4 'state of FIG. 7). Specifically, the decompression drying device 1 opens the opening and closing valve 43b to supply cooling water to The cooling water passage 42 in the cooling plate 41 is cooled to cool the cooling plate 41. On the other hand, the cooled cooling plate 4 1 absorbs heat radiated from the substrate 9 to cool the substrate 9. At the time of the cooling treatment, the vacuum drying apparatus 1 also continues to discharge the nitrogen gas from the discharge portions 51a, 51b, and 51c. The nitrogen gas ejected from the ejecting portion 51b is sprayed on the upper surface of the substrate 9 to promote the cooling of the substrate 9. Therefore, the upper side of the substrate 9 can be cooled more quickly and uniformly. Further, the nitrogen gas ejected from the discharge portions 5 1 a and 5 1 c is sprayed onto the lamp heater 31 and the diffusion plate 32' to promote the cooling of the lamp heater 31 and the diffusion plate 32. Therefore, it is possible to further reduce the residual heat of the lamp heating 1256I9.doc!9 1342385 device 31 and the diffusion plate 32 to more uniformly cool the substrate 9.
又，在冷卻基板9時，斷續地或連續地驅動基板保持部 20之升降機構23，使基板9徐徐下降。藉此，使對基板9之 冷卻之強度（由基板9吸收之熱量）徐徐上升，一面防止冷卻 不均，一面提高冷卻效率。不久，基板保持銷2 1之頭部下 降至比冷卻板41之上面更下方時，基板9由基板保持銷21 被移載至冷卻板41上，基板9係在接觸保持於冷卻板41上 之狀態被直接加熱。 其後，減壓乾燥裝置1由處理室10搬出冷卻後之基板 9(步驟S5，圖8之狀態），具體而言，減壓乾燥裝置1係停 止排氣泵62e而使處理室10内部回復至常壓。而，減壓乾 燥裝置1係使複數基板保持銷2 1上升，藉以使基板9離開冷 卻板。其後，減壓乾燥裝置1藉升降機構12&使處理室1〇之 蓋部12上升’將搬送機器人8〇***處理室1〇内部，由搬送 機器人80接受基板保持銷21上之基板9而將其搬出處理室Further, when the substrate 9 is cooled, the elevating mechanism 23 of the substrate holding portion 20 is intermittently or continuously driven to gradually lower the substrate 9. Thereby, the strength of the cooling of the substrate 9 (the amount of heat absorbed by the substrate 9) is gradually increased, and the cooling efficiency is improved while preventing uneven cooling. Soon, when the head of the substrate holding pin 21 is lowered below the upper surface of the cooling plate 41, the substrate 9 is transferred to the cooling plate 41 by the substrate holding pin 21, and the substrate 9 is held in contact with the cooling plate 41. The state is heated directly. Thereafter, the vacuum drying apparatus 1 carries out the cooled substrate 9 from the processing chamber 10 (step S5, the state of FIG. 8). Specifically, the vacuum drying apparatus 1 stops the exhaust pump 62e and returns the inside of the processing chamber 10. To normal pressure. On the other hand, the vacuum drying apparatus 1 raises the plurality of substrate holding pins 2 1 so that the substrate 9 leaves the cooling plate. Then, the vacuum drying apparatus 1 raises the lid portion 12 of the processing chamber 1 by the elevating mechanism 12 & 'insert the transport robot 8 into the processing chamber 1 , and the transfer robot 80 receives the substrate 9 on the substrate holding pin 21 . Move it out of the processing room
10之外。利用以上，完成對1片基板9之減壓乾燥處理、 加熱處理及冷卻處理。 如上所述，此減壓乾燥裝置丨具備將處理室1〇之内部減 壓之功能，並具備將處理室1〇内之基板9加熱用之加熱部 3〇與將處理室1〇内之基板9冷卻用之冷卻部4〇。因此，減 壓乾燥裝置1對基板9施行減壓乾燥處理後，不必搬送基板 卩可加熱·冷郃。從而，可全體地迅速施行減壓乾燥 ^理、加熱處理及冷卻處理。又，因無必要為加熱處理及 冷部處理而”設置職裝置，故在全體上可減少裝置之 1256 丨 9.doc -20- 佔有面積。 ^ 11 ^ ^ ^ ^3〇^' ^ ^ ^ ^ ^ ^ ^ 又，Mm 賴縣板化成料之疑慮較少。 二：::裝Γ冷卻部4。係配置於基板9之下方 :此非冷部時冷卻板41對基板9造成熱的影響之疑Outside of 10. By the above, the vacuum drying treatment, the heat treatment, and the cooling treatment of the one substrate 9 are completed. As described above, the vacuum drying apparatus 丨 has a function of decompressing the inside of the processing chamber 1 and includes a heating unit 3 for heating the substrate 9 in the processing chamber 1 and a substrate in the processing chamber 1 9 Cooling unit 4 for cooling. Therefore, after the pressure reduction drying apparatus 1 performs the vacuum drying treatment on the substrate 9, it is not necessary to convey the substrate, and it can be heated and cooled. Therefore, the pressure reduction drying, the heat treatment, and the cooling treatment can be quickly performed as a whole. Moreover, since it is not necessary to set up the service device for the heat treatment and the cold portion treatment, the total area of the device can be reduced by 1256 丨9.doc -20-. ^ 11 ^ ^ ^ ^3〇^' ^ ^ ^ ^ ^ ^ ^ In addition, Mm Lai County has less doubts about slab formation. Second::: Mounting cooling unit 4. It is disposed below the substrate 9: the cooling plate 41 affects the substrate 9 during this non-cold portion. Doubt
二：^而，可加熱及冷卻基板9而不會發生加熱不均 及冷卻不均。 J 加熱邛30係在開始處理室1〇内之減壓’經過特定時 <將熱施加至基板9。因此，加熱部3〇將熱施加至基 9時’已在進行光抗姓膜之減壓乾燥處理某種程度。從 而’可一面防止光抗敍膜之突然彿騰及因急遽乾燥而使加 熱變得不均等，—面加熱基板9。 < 3 ·變形例> 以上，已說明有關本發明之一實施型態，但本發明並不 限疋於上述之例。例如，在上述之例中，係在步驟S4之冷 卻處理中施行由喷出部513、51b、5U氮氣之喷出，但也 可在冷卻處理之初期階段不施行氮氣之喷出，而由冷卻處 理之途中施行氮氣之喷出。如此’可更緩慢地冷卻基板 9,故可進一步降低冷卻不均之發生。 又，加 又，在上述之例中’係由減壓乾燥處理（步驟S2)之途中 開始基板9之加熱（步驟S3)，但也可在其他之時點開始加 熱。例如’也可在減壓乾燥處理完畢，使處理室丨〇内部回 復壓力後開始基板9之加熱。又，也可在減壓乾燥處理之 初期階段（例如圖9中之T1之間）開始基板9之加熱。 125619.doc 1342385 &部3=必需要在步驟S3之前使其停止。例如，也可在步 驟S3之前’事先將燈加熱器31預熱至不將熱供應至基板9 之程度’在步驟S3’提高燈加熱器31之輸出而將熱供應至 基板9。 、 又，在上述之例中，係藉使基板保持銷21升降移動，而 使基板9對加熱部3〇接近或離開，但也可採用將基板9之高 度固定，而使加熱部30對基板9接近或離開之構成。例如 φ 也可採用將燈加熱器31及擴散板32連接至丨個支持構件， 藉特疋之升降機構使支持構件升降，藉以使燈加熱器3 1及 擴散板32成一體地升降移動之構成。又，同樣地，也可採 用使冷卻板41升降移動之構成。 又，在上述之例中，係在加熱部3 〇使用燈加熱器3 i， 但，也可使用鎳鉻線等其他加熱源取代燈加熱器3〖。但， 燈加熱器3 1具有非加熱時之餘熱極小，僅在必要時才對基 板9供應熱量之優點。 • 又’在上述之例中，係使用石英玻璃構成之擴散板32， 但也可使用鋁（A1)等金屬構成之擴散板32。但，石英玻璃 構成之擴散板32具有蓄熱量極小，僅在必要時才對基板9 供應熱量之優點。 又’上述之減壓乾燥裝置丨係用於處理液晶顯示裝置用 之角形玻璃基板，但本發明之減壓乾燥裝置也可對半導體 晶圓、PDP用玻璃基板、光碟用基板等其他之基板施行處 理。 【圖式簡單說明】 I25619.doc • 22· 圖1係本發明 圖。 之一實施型態之減壓乾燥裳置 之縱剖面 圖2係表示控制部與各部之連接構成之區塊圖。 圖3係表示減壓乾燥裝置之處理流程之流程圖。 圖4係減壓乾燥裝置之動作狀態圖。 圖5係減壓乾燥裝置之動作狀態圖。 圖6係減壓乾燥裝置之動作狀態圖。Second, the substrate 9 can be heated and cooled without uneven heating and uneven cooling. J Heat 邛 30 is a decompression in the start of the processing chamber 1 经过 when it is specified < Heat is applied to the substrate 9. Therefore, when the heating portion 3 〇 applies heat to the substrate 9, the vacuum drying treatment of the photo-resistance film is already performed to some extent. Thus, the substrate 9 can be heated while preventing the sudden smear of the light-resistant film and the uneven heating due to rapid drying. <3. Modifications> Although an embodiment of the present invention has been described above, the present invention is not limited to the above examples. For example, in the above-described example, the discharge of the nitrogen gas by the discharge portions 513, 51b, and 5U is performed in the cooling process of the step S4, but the discharge of the nitrogen gas may not be performed in the initial stage of the cooling process, but the cooling may be performed. Nitrogen is sprayed out during the treatment. Thus, the substrate 9 can be cooled more slowly, so that the occurrence of uneven cooling can be further reduced. Further, in the above-described example, the heating of the substrate 9 is started in the middle of the vacuum drying treatment (step S2) (step S3), but heating may be started at other times. For example, it is also possible to start the heating of the substrate 9 after the pressure drying treatment is completed, and the inside of the processing chamber is returned to the pressure. Further, the heating of the substrate 9 may be started in the initial stage of the vacuum drying treatment (e.g., between T1 in Fig. 9). 125619.doc 1342385 & Section 3 = It is necessary to stop it before step S3. For example, the lamp heater 31 may be preheated to the extent that heat is not supplied to the substrate 9 before the step S3. The output of the lamp heater 31 is increased in step S3' to supply heat to the substrate 9. Further, in the above-described example, the substrate holding pin 21 is moved up and down to bring the substrate 9 closer to or away from the heating portion 3, but the height of the substrate 9 may be fixed, and the heating portion 30 may be opposed to the substrate. 9 composition of approaching or leaving. For example, φ may be connected to the lamp heater 31 and the diffusion plate 32 to the support members, and the support member is lifted and lowered by the elevating mechanism, so that the lamp heater 31 and the diffusion plate 32 are integrally moved up and down. . Further, similarly, a configuration in which the cooling plate 41 is moved up and down may be employed. Further, in the above example, the lamp heater 3 i is used in the heating unit 3, but other heating sources such as a nickel-chromium wire may be used instead of the lamp heater 3. However, the lamp heater 31 has the advantage that the residual heat at the time of non-heating is extremely small, and the heat is supplied to the substrate 9 only when necessary. Further, in the above example, the diffusion plate 32 made of quartz glass is used, but a diffusion plate 32 made of a metal such as aluminum (A1) may be used. However, the diffusing plate 32 composed of quartz glass has an advantage that the amount of heat stored is extremely small, and heat is supplied to the substrate 9 only when necessary. Further, the above-mentioned vacuum drying apparatus is used for processing a rectangular glass substrate for a liquid crystal display device, but the vacuum drying apparatus of the present invention can also be applied to other substrates such as a semiconductor wafer, a PDP glass substrate, and a disk substrate. deal with. BRIEF DESCRIPTION OF THE DRAWINGS I25619.doc • 22· Fig. 1 is a diagram of the present invention. Fig. 2 is a block diagram showing the connection between the control unit and the respective units. Fig. 3 is a flow chart showing the processing flow of the vacuum drying apparatus. Fig. 4 is a view showing the operation state of the vacuum drying apparatus. Fig. 5 is a view showing the operation state of the vacuum drying apparatus. Fig. 6 is a view showing the operation state of the vacuum drying apparatus.
圖7係減壓乾燥裝置之動作狀態圖。 圖8係減壓乾燥裝置之動作狀態圖。 圖9係處理室内之壓力變化之圖。 【主要元件符號說明】 1 減壓乾燥裝置 9 基板 10 處理室 20 基板保持部Fig. 7 is a view showing the operation state of the vacuum drying apparatus. Fig. 8 is a view showing the operation state of the vacuum drying apparatus. Figure 9 is a graph of pressure changes in the processing chamber. [Main component symbol description] 1 Vacuum drying device 9 Substrate 10 Processing chamber 20 Substrate holding portion
21 基板保持銷 23 升降機構 3〇 加熱部 31 燈加熱器 32 擴散板 40 冷卻部 41 冷卻板 50 供氣部 51a ' 51b ' 51c 喷出部 125619.doc -23- 1342385 52e ' 52f ' 52g 60 62e 70 開閉閥 排氣部 排氣泵 控制部21 substrate holding pin 23 lifting mechanism 3 heating unit 31 lamp heater 32 diffusion plate 40 cooling portion 41 cooling plate 50 air supply portion 51a ' 51b ' 51c ejection portion 125619.doc -23- 1342385 52e ' 52f ' 52g 60 62e 70 open and close valve exhaust part exhaust pump control unit
I25619.doc -24-I25619.doc -24-
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| JP2007015699 | 2007-01-26 | ||
| JP2007208911A JP5089288B2 (en) | 2007-01-26 | 2007-08-10 | Vacuum dryer |
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- 2007-08-10 JP JP2007208911A patent/JP5089288B2/en active Active
- 2007-11-09 TW TW096142587A patent/TWI342385B/en active
- 2007-11-12 KR KR1020070114894A patent/KR100924901B1/en active IP Right Grant
- 2007-11-20 CN CN2007101932234A patent/CN101231135B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008202930A (en) | 2008-09-04 |
| KR20080070503A (en) | 2008-07-30 |
| TW200844388A (en) | 2008-11-16 |
| CN101231135A (en) | 2008-07-30 |
| CN101231135B (en) | 2010-06-02 |
| JP5089288B2 (en) | 2012-12-05 |
| KR100924901B1 (en) | 2009-11-02 |
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