200844388 九、發明說明： 【發明所屬之技術領域】 本發明係關於對半導體晶圓、液晶顯示裝置用玻璃基 板、PDP(電漿顯示面板）用玻璃基板、光碟用基板等之基 • 板施行減壓乾燥處理之減壓乾燥裝置。 【先前技術】 乂往已知有在基板之製程中，對塗布有光抗蝕膜等薄 膜之基板施行減壓乾燥處理之減壓乾燥裝置。減壓乾燥裝 將基板搬入特定之處理室内後，藉排氣泵吸引排除處 理室内之氣體，將處理室内部減壓。藉此，使基板上之薄 膜中之/合媒成分氣化’使薄膜乾燥。以往之減壓乾燥裝置 之構成例如揭示於專利文獻1。 又，在以往之基板之製程中，通常將在減壓乾燥裝置被 施行減壓乾燥處理之基板，在其後逐次搬送至其他加熱襄 置及冷卻裝置，在此等裝置中，對基板逐次施行加熱處理[Technical Field] The present invention relates to a base plate for a semiconductor wafer, a glass substrate for a liquid crystal display device, a glass substrate for a PDP (plasma display panel), and a substrate for an optical disk. A vacuum drying apparatus for pressure drying treatment. [Prior Art] A vacuum drying apparatus which performs a vacuum drying treatment on a substrate on which a film such as a photoresist film is applied in a substrate process is known. Decompression drying equipment After the substrate is carried into a specific processing chamber, the exhaust chamber is sucked to remove the gas in the processing chamber, and the inside of the processing chamber is depressurized. Thereby, the /component component in the film on the substrate is vaporized to dry the film. The configuration of the conventional vacuum drying apparatus is disclosed, for example, in Patent Document 1. Further, in the conventional substrate process, the substrate subjected to the reduced-pressure drying treatment in the vacuum drying apparatus is usually transferred to another heating device and a cooling device successively, and in this device, the substrate is sequentially applied. Heat treatment
Ci &〇卩處理°藉此’進—步促進基板上之薄膜之乾燥，使 薄膜硬化。 [專利文獻1]日本特開2006-105 524號公報 【發明内容】 、 （發明所欲解決之問題） 但，在以往之裝置構成中，為防止加熱裝置之加熱時基 薄臈中之’奋媒成分突然沸騰，有必要在減壓乾 置充分花費時間施行減壓乾燥處理。尤其，近年來： 處理對象之基板尺寸逐漸大型化，減壓乾燥處理所需之= 125619.doc 200844388 間更為增長。 、又，以往，如上所述，將減壓乾燥裝置與加熱裝置構成 為個別體之裝置。因此，在減壓乾燥裝置與加熱裝置之 間有必要將基板由減壓乾燥裝置搬送至加熱裝置。從 • 而，難以迅速施行減壓乾燥處理與加熱處理，且在全體 . 上’農置之佔有面積大為增加。 另方面’欲在減壓乾燥裝置之處理室内設置加熱機構 f) 打，在非加熱時，也有加熱機構之餘熱對基板造成熱的影 響之虞。此種餘熱之熱的影響有時成為薄膜之突然沸騰及 乾燥不均之原因，故並不理想。 本發明係鑑於此種情況而發明者，其目的在於提供可迅 速施行減壓乾燥處理與加熱處理，並在全體上減少裝置之 佔有面積，且減少對非加熱時之基板之熱的影響之減壓乾 燥裝置。 (解決問題之技術手段） 〇 為解決上述問題，請求項1之發明係將形成於基板主面 之薄膜減壓乾燥之減壓乾燥裝置，其特徵在於包含：處理 室，其係覆蓋基板之周圍；支持機構，其係在前述處理室 之内°卩，以使主面朝向上方之狀態支持基板；減壓機構， ， 其係將前述處理室之内部減壓；及加熱機構，其係由上方 側加熱由則述支持機構所支持之基板；且前述加熱機構係 在蝻述減壓機構之減壓開始，經過特定時間後，將熱施加 至基板。 凊求項2之發明之特徵在於··在請求項1所記載之減壓乾 1256l9.doc 200844388 燥裝置中 " ，則述加熱機構係包含：燈加熱器，其係照射光 …、，及擴散板，其係擴散由前述燈加熱器產生之 熱。 炉i = 3之發明之特徵在於：在請求項2所記載之減Μ乾 :，與進基—距離調_“係_ Γ Ο 燥2Γ，之::第之特徵在於:在請求項3所記載之減壓乾 …U巨離調節機構係在前述加熱機構之加 …、主、、使别述加熱機構與基板徐徐接近。 燥=5之發明之特徵在於:在請求項4所記載之減壓乾 ，則述減壓機構係在前述加熱機 剛述處理室内回復壓力。 ’、、、f使 ^項6之發明之特徵在於：在請求们至 §己載之減壓乾燥裝置中，進一步包含 項所 苴俦對义、+、 3 ·加熱部吹氣機構， ，、係對則述加熱機構供應氣體。 凊求項7之發明之特徵在於：在請求項1 :載之減壓乾燥裝置中，基板被支持於前 壬項所 前^處理室内之基板位置之溫度為4代以下支持機構時之 請求項8之發明之特徵在於··在請求項 記載之減壓乾燥|置中，在前述處理室巾任一項所 由：方側冷卻基板之冷卻機構。 …進-步包含 請求項9之發明之特徵在於：在請 燥裝置中’進-步包含：第2距離調節機J記载之減壓乾 述冷卻機構與基板間之距離。 ，其係調節前 125619.doc 200844388 請求項10之發明之特徵在於：主 乾烨梦罟Φ , 、在明求項9所記載之減壓 认义☆丄 敬人乳機構’其係對被支掊 於别述支持機構之基板供應氣體。 、 請求項11之發明之特徵在於： 任明求項1 〇所記載之竑厭 乾燥裝置中，前述基板吹氣機構 戍稱係在别述冷卻機構之冷卻 開始，經過特定時間後，開始氣體之供應。 (發明之效果）The Ci & 〇卩 treatment thus promotes the drying of the film on the substrate to harden the film. [Patent Document 1] Japanese Laid-Open Patent Publication No. 2006-105524. SUMMARY OF THE INVENTION (Problems to be Solved by the Invention) However, in the conventional device configuration, in order to prevent the heating of the heating device, the The medium component suddenly boils, and it is necessary to take a time to dry under reduced pressure and perform a vacuum drying treatment. In particular, in recent years, the size of the substrate to be processed has been gradually increased, and the amount required for the vacuum drying treatment is further increased between 125,619.doc and 200844388. Further, conventionally, as described above, the vacuum drying apparatus and the heating apparatus are configured as individual devices. Therefore, it is necessary to transport the substrate from the vacuum drying apparatus to the heating apparatus between the vacuum drying apparatus and the heating apparatus. From the point of view, it is difficult to quickly perform the decompression drying treatment and the heat treatment, and the area occupied by the farmer is greatly increased. On the other hand, it is desirable to provide a heating mechanism in the processing chamber of the vacuum drying apparatus. f) When there is no heating, the residual heat of the heating mechanism may cause heat to the substrate. The influence of such heat of the residual heat may be a cause of sudden boiling of the film and uneven drying, which is not preferable. The present invention has been made in view of such circumstances, and an object of the present invention is to provide a rapid drying treatment and a heat treatment which can reduce the occupation area of the apparatus as a whole and reduce the influence on the heat of the substrate during non-heating. Pressure drying device. (Means for Solving the Problems) In order to solve the above problems, the invention of claim 1 is a vacuum drying apparatus for drying and drying a film formed on a main surface of a substrate, comprising: a processing chamber covering the periphery of the substrate a support mechanism that supports the substrate in a state in which the main surface faces upward, a pressure reducing mechanism that decompresses the inside of the processing chamber, and a heating mechanism that is The upper side heats the substrate supported by the support mechanism; and the heating mechanism starts from the decompression of the decompression mechanism, and after a certain period of time, heat is applied to the substrate. The invention of claim 2 is characterized in that, in the decompressing dry 1256l9.doc 200844388 drying device described in claim 1, the heating mechanism includes a lamp heater, which is an irradiation light, and A diffuser plate that diffuses heat generated by the aforementioned lamp heater. The invention of the furnace i = 3 is characterized in that: in the claim 2, the reduction is as follows: and the base-distance adjustment _ "system _ Γ Γ 2, which is characterized by: in claim 3 The invention described in the present invention is characterized in that the heating mechanism is in the vicinity of the heating mechanism, and the heating mechanism is brought into close proximity to the substrate. The invention of the dryness=5 is characterized by the reduction described in claim 4 In the case of press drying, the pressure reducing mechanism is such that the pressure is restored in the processing chamber of the heating device. The invention of ', , and f is characterized by: in the vacuum drying apparatus of the requester to the §, further Included in the term, +, 3, heating means, and, in the pair, the heating means supply gas. The invention of claim 7 is characterized by: in claim 1: the vacuum drying device The invention of claim 8 in which the substrate is supported at a substrate position in the front chamber of the front chamber is 4 or less, and the invention is characterized in that, in the decompression drying method described in the claim, Any of the foregoing processing chambers is provided by: a cooling mechanism for cooling the substrate on the side ... - The invention including the invention of claim 9 is characterized in that, in the drying device, the step further includes: the distance between the cooling mechanism and the substrate, which is described in the second distance adjusting machine J, which is before the adjustment of 125619. .doc 200844388 The invention of claim 10 is characterized in that: the trunk nightmare Φ, and the decompression recognition described in the item 9 of the 丄 丄 人 人 人 人 ' ' 其 其 其 其 ' ' ' The invention of claim 11 is characterized in that: in the anaerobic drying device described in the item 1 〇, the substrate blowing mechanism nickname is started after the cooling of the cooling mechanism, and after a lapse of a certain period of time, Start the supply of gas. (The effect of the invention)
Ο 依據請求項1〜U所記載之發明，減壓乾燥裝置係包含： 處理室’其係覆蓋基板之周s;支持機構，其係在處理室 之内部，以使主面朝向上方之狀態支持基板；減壓機構， 其係將處理室之㈣減壓；及加熱機構，其係由上方側加 熱被支持機構支持之基板。因此，減壓乾燥裝置在對基板 施行減壓乾燥處理後’不必搬送基板，即可將其加熱。因 此，可迅速施行減壓乾燥處理與加熱處理，在全體上也可 減少裝置之佔有面積。又，因加熱機構係由上方側加熱基 板，故非加熱時對基板之熱影響較少。又，加熱機構係在 開始減壓機構之減壓，經過特定時間後，將熱施加至基 板。因此，加熱機構將熱施加至基板時，減壓乾燥處理已 進行某種程度，可一面防止薄膜之突然沸騰或加熱不均， 一面加熱基板。 尤其’依據請求項2所記載之發明，加熱機構係包含： 燈加熱器’其係照射光而產生熱；及擴散板，其係擴散由 燈加熱器產生之熱。因此，可使由燈加熱器所照射之光及 熱經由擴散板到達基板表面，均勻地加熱基板之上面。 125619.doc 200844388 又，燈加熱器之非加埶時 ...^ 、子之餘熱極小，故非力口埶時之餘埶 給與基板熱影響之疑慮較小。 …子之餘熱 尤其’依據請求項3所 ^ 、斤°己载之發明，減壓乾燥裝置進一 步包含·弟1距離調節媳 機構，其係調節加熱機構與基板間 之距離。因此，可調節對基板之加熱強度。 尤其’依據請求項4^ # 々 、 载之發明，第1距離調節機構係 在加熱機構之加熱時 & ' ϋ…、機構與基板徐徐接近。因 二’可-面防止薄膜之突然沸騰或加熱不均，一面提高對 基板之加熱效率。 尤其’依據請求項5所# ^ 载發明，減壓機構係在加熱 =加熱時，使處理室内鳴力。因此，可提高由加 熱機構對基板之熱傳播效率而高效率地加熱基板之上面。 、了依據明求項6所記載之發明，減壓乾燥裝置進一 / 3 υΒ人氣機構’其係對加熱機構供應氣體。因 此，可降低加熱機構之餘熱。 L) 尤其，依據請求項7所記載之發明，基板被支持於支持 機構時之處理室内之基板位置之溫度城以下。因此， 基板被支持於支持機構時，對未乾燥之薄膜，可防止造成 突然沸騰等不均勻原因之不良影響產生。 、二依據明求項8所記載之發明，》咸壓乾燥裝置係在 心至内口Ρ冑-步包含由下方側冷卻基板之冷卻機構。 /〆咸【乾燥裝置對基板施行減壓乾燥處理及加熱處理 Τ不必搬送基板，即可加以冷卻。因此，可迅速施行減 n W @'加熱處理及冷卻處理，且在全體上亦減少裝 125619.doc -10- 200844388 置之佔有面積°又’冷卻機構由下方側冷卻基板，故在非 冷卻時，對基板之熱影響較少。 尤其，依據請求項9所記載之發明，減壓乾燥裝置進一 步包含：第2距離調節機構，其係調節冷卻機構與基板間 之距離。因此，可調節對基板之冷卻強度。 尤其，依據請求項1〇所記載之發明，減壓乾燥裝置進一 步包含：基板吹氣機構，其係對被支持於支持機構之基板 供應氣體。因此，可更迅速且均勻地冷卻基板之上面側。 尤其，依據請求項11所記載之發明，基板吹氣機構係在 開始冷卻機構之冷卻，經過特定時間後，開始氣體之供 應。因此，可更緩慢地冷卻基板，進一步降低冷卻不均之 產生。 【實施方式】 以下，一面參照圖式，一面說明本發明之較佳實施型 態。 < 1 ·減壓乾燥裝置之全體構成> 圖1係本發明之一實施型態之減壓乾燥裝置1之縱剖面 圖。在圖1中，也概念地表示連接於減壓乾燥裝置1之吸排 氣系統及驅動系統之構成。此減壓乾燥裝置1係在選擇地 蝕刻液晶顯示裝置用之角形玻璃基板（以下僅稱「基板」）9 之表面之光微影步驟中，對抗蝕膜塗布後之基板9施行減 壓乾燥處理及其後續之加熱•冷卻處理用之裝置。如圖1 所示，減壓乾燥裝置1係包含處理室1 〇、基板保持部20、 加熱部30、冷卻部40、供氣部50、及排氣部60。 125619.doc -11 - 200844388 處理至1 〇係内部具有對基板施行減壓乾燥處理、加熱處 理及冷卻處理用之處理空間之耐壓容器。處理室10具有可 互相为離之基部11與蓋部12。基部11被固定設置於裝置架 (未囷卞）上又，在蓋部12，連接在圖1中概念地表示之升 降機構12a,驅動升降機構12a時，可使蓋部12對基部11向 上下升降移動。使蓋部12下降時，基部u與蓋部12相抵接 而成一體，在其内部形成基板9之處理空間。另一方面， 使蓋部12上升時，可使處理室1〇開放，處於可在處理室ι〇 之内部與外部之間搬送基板9之狀態。 在基部11上面之周緣部，設有以矽橡膠等構成之〇形環 13。使蓋部12下降時，基部丨丨之上面與蓋部以之下面被〇 形環13所密閉，使處理室1〇之内部之處理空間成為氣密狀 態。 基板保持部20係在處理室1〇之内部保持基板9用之機 構。基板保持部20具有複數基板保持銷21，使各基板保持 銷21之頭部抵接於基板9之下面，而將基板9支持成水平姿 勢。複數之基板保持銷2 1立設於配置於處理室丨〇之外部之 1個支持構件22上，分別貫通基部11及後述之冷卻板“而 突出至處理室10之内部。 又，在支持構件22，連接在圖1中概念地表示之升降機 構23。因此，驅動升降機構23時，可使支持構件22及複數 基板保持銷21成一體向上下升降移動。減壓乾燥裝置^ 一 面將基板9保持於複數基板保持銷2 1上，一面驅動升降機 構23時，可調節在處理室1〇内之基板9之高度位置。 125619.doc •12- 200844388 加熱部30係在處理室1〇内加熱被保持於基板保持部2〇之 基板9之上面用之機構。加熱部30具有成為加熱源之複數 支棒狀燈加熱器31、及使燈加熱器31所照射之光及熱擴散 之擴散板32。複數之燈加熱器31係經由特定之夾具（省略 . 圖示）固定於處理室1〇之蓋部12之下面側，排列成水平（與 • 圖1之紙面正交之方向）且全體上覆蓋基板9之上方。燈加 熱器3 1之開關性能優異，照射時雖會對基板9施加大的熱 (' 1，但停止後之餘熱極少。又，燈加熱器3 1係配置於比基 板9更靠近上方側。因此，停止燈加熱器3丨之微量之餘熱 對基板9造成之影響之疑慮也少。 擴散板32係經由特定之夾具（省略圖示）固定於處理室i〇 之蓋部12之下面側，水平被配置於複數之燈加熱器31與基 板9之間。擴散板32例如係由石英玻璃所構成。驅動燈加 熱器3 1時，燈加熱器3 1所照射之光及熱一面經由擴散板32 被均勻化，一面到達基板9之表面，以加熱基板9之上面。 又’將基板9保持於複數之基板保持銷2 1上，驅動上述升 降機構23時’可使基板9與擴散板32間之距離發生變化。 減壓乾爍裝置1係藉如此使基板9與擴散板32間之距離發生 變化而調節對基板9之加熱強度。 • 冷卻部40係在處理室1〇内冷卻保持於基板保持部20之基 板9用之機構。冷卻部40具有固定地被安裝於處理室1〇之 基部11之冷卻板4 1 ’在冷卻板41之内部，形成通冷卻水用 之冷卻水路42。冷卻水路42之上游側之端部經由配管43a 及開閉閥43b連接至冷卻水供應源43c。又，冷卻水路42之 125619.doc -13- 200844388 下游側之端部經由配管43d連接至排液管線。因此，開放 開閉閥43b時，可將冷卻水由冷卻水供應源43c供應至冷卻 水路42，以冷卻冷卻板41。而，被冷卻水低溫化之冷卻板 41可吸收由基板9放射之熱，藉以冷卻基板9。 • 將基板9保持於複數之基板保持銷2 1上，驅動上述之升 . 降機構23時，可使基板9與冷卻板4 1間之距離發生變化。 如此，減壓乾燥裝置1可藉改變基板9與冷卻板41之間之距 離’以調節對基板9之冷卻強度。又，冷卻板41係配置於 比基板9更靠近下方側。因此，在非冷卻時，冷卻板4丨對 基板9造成之熱的影響較少。 供氣部50係將氮氣供應至處理室丨〇内用之配管系統。供 氣部50具有形成於處理室1〇之蓋部12之喷出部51a、51b、 51〇、與將氮氣供送至此等噴出部51a、51b、51〇用之配管 部52。配管部52係由複數配管52a、52b、52c、53d、複數 開閉閥52e、52f、52g、及氮氣供應源52h組合所構成。According to the invention described in claims 1 to U, the vacuum drying apparatus includes: a processing chamber 'which covers the circumference s of the substrate; and a support mechanism which is inside the processing chamber so that the main surface faces upward. a support substrate; a pressure reducing mechanism that reduces (4) the pressure of the processing chamber; and a heating mechanism that heats the substrate supported by the support mechanism from the upper side. Therefore, after the substrate is subjected to a reduced-pressure drying treatment, the vacuum drying apparatus can be heated without having to transport the substrate. Therefore, the vacuum drying treatment and the heat treatment can be quickly performed, and the area occupied by the apparatus can be reduced as a whole. Further, since the heating mechanism heats the substrate from the upper side, the heat influence on the substrate during non-heating is small. Further, the heating means starts the decompression of the decompression mechanism, and after a certain period of time, heat is applied to the substrate. Therefore, when the heating means applies heat to the substrate, the vacuum drying treatment is performed to some extent, and the substrate can be heated while preventing sudden boiling or uneven heating of the film. In particular, according to the invention of claim 2, the heating mechanism includes: a lamp heater that emits light to generate heat; and a diffusion plate that diffuses heat generated by the lamp heater. Therefore, the light and heat irradiated by the lamp heater can be made to reach the surface of the substrate via the diffusion plate, and the upper surface of the substrate can be uniformly heated. 125619.doc 200844388 In addition, when the lamp heater is not twisted, the heat of the sub-heater is extremely small, so the residual force of the non-powerful port is less of a concern for the thermal influence of the substrate. In addition, according to the invention of claim 3, the vacuum drying device further includes a distance adjustment mechanism, which adjusts the distance between the heating mechanism and the substrate. Therefore, the heating strength to the substrate can be adjusted. In particular, according to the invention of claim 4, the first distance adjusting mechanism is in the heating of the heating mechanism & 'ϋ..., the mechanism is close to the substrate. The heating efficiency of the substrate is improved because the two-side-side prevents sudden boiling or uneven heating of the film. In particular, according to the invention of claim 5, the pressure reducing mechanism causes the processing chamber to be audible when heating = heating. Therefore, the heat transfer efficiency of the substrate by the heating means can be improved to efficiently heat the upper surface of the substrate. According to the invention described in the sixth aspect, the vacuum drying apparatus is supplied to a heating mechanism to supply a gas to the heating mechanism. Therefore, the residual heat of the heating mechanism can be reduced. In particular, according to the invention of claim 7, the substrate is supported below the temperature of the substrate position in the processing chamber at the time of supporting the mechanism. Therefore, when the substrate is supported by the supporting mechanism, the undried film can be prevented from being adversely affected by unevenness such as sudden boiling. According to the invention described in the eighth aspect of the invention, the salt water pressure drying device includes a cooling mechanism for cooling the substrate from the lower side in the center to the inner port. / 〆 salt [Drying device performs decompression drying treatment and heat treatment on the substrate. Τ It is possible to cool the substrate without transporting the substrate. Therefore, it is possible to quickly perform the reduction of n W @'heat treatment and cooling treatment, and also reduce the occupation area of 125619.doc -10- 200844388 as a whole. The cooling mechanism cools the substrate from the lower side, so when it is not cooled , less heat impact on the substrate. In particular, according to the invention of claim 9, the vacuum drying apparatus further includes: a second distance adjusting mechanism that adjusts a distance between the cooling mechanism and the substrate. Therefore, the cooling intensity to the substrate can be adjusted. In particular, according to the invention of claim 1, the vacuum drying apparatus further includes: a substrate blowing mechanism that supplies the gas to the substrate supported by the supporting mechanism. Therefore, the upper side of the substrate can be cooled more quickly and uniformly. In particular, according to the invention of claim 11, the substrate blowing mechanism starts the cooling of the cooling mechanism, and after a certain period of time, the supply of the gas is started. Therefore, the substrate can be cooled more slowly, further reducing the occurrence of uneven cooling. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. <1. Overall Configuration of Vacuum Drying Apparatus> Fig. 1 is a longitudinal sectional view of a vacuum drying apparatus 1 according to an embodiment of the present invention. In Fig. 1, the configuration of the suction and exhaust system and the drive system connected to the vacuum drying apparatus 1 is also conceptually shown. In the vacuum drying apparatus 1 for selectively etching the surface of the angled glass substrate (hereinafter simply referred to as "substrate") 9 for a liquid crystal display device, the substrate 9 after the resist coating is subjected to a vacuum drying treatment. And its subsequent heating and cooling treatment devices. As shown in FIG. 1, the vacuum drying apparatus 1 includes a processing chamber 1A, a substrate holding portion 20, a heating portion 30, a cooling portion 40, a gas supply portion 50, and an exhaust portion 60. 125619.doc -11 - 200844388 Processed to a pressure vessel having a processing space for vacuum drying, heat treatment and cooling treatment on a substrate. The processing chamber 10 has a base portion 11 and a lid portion 12 which are separable from each other. The base portion 11 is fixedly disposed on the apparatus frame (opening), and the lid portion 12 is connected to the lifting mechanism 12a conceptually shown in FIG. 1. When the lifting mechanism 12a is driven, the lid portion 12 can be made up and down with respect to the base portion 11. Lift and move. When the lid portion 12 is lowered, the base portion u and the lid portion 12 are brought into contact with each other to form a processing space for the substrate 9 therein. On the other hand, when the lid portion 12 is raised, the processing chamber 1 can be opened, and the substrate 9 can be conveyed between the inside and the outside of the processing chamber. A beak ring 13 made of a rubber or the like is provided on the peripheral portion of the upper surface of the base portion 11. When the lid portion 12 is lowered, the upper surface of the base portion and the lid portion are sealed by the beak ring 13 so that the processing space inside the processing chamber 1 is airtight. The substrate holding portion 20 is a mechanism for holding the substrate 9 inside the processing chamber 1A. The substrate holding portion 20 has a plurality of substrate holding pins 21 such that the head portions of the substrate holding pins 21 abut against the lower surface of the substrate 9, and the substrate 9 is supported in a horizontal posture. A plurality of substrate holding pins 2 1 are erected on one of the support members 22 disposed outside the processing chamber, and penetrate through the base portion 11 and a cooling plate to be described later to protrude into the inside of the processing chamber 10. Further, in the supporting member 22, the elevating mechanism 23 conceptually shown in Fig. 1 is connected. Therefore, when the elevating mechanism 23 is driven, the supporting member 22 and the plurality of substrate holding pins 21 can be moved up and down in an integrated manner. The decompression drying device When the lifting mechanism 23 is driven while holding the plurality of substrate holding pins 21, the height position of the substrate 9 in the processing chamber 1 can be adjusted. 125619.doc • 12- 200844388 The heating unit 30 is heated in the processing chamber 1 A mechanism for holding on the upper surface of the substrate 9 of the substrate holding portion 2. The heating portion 30 has a plurality of rod-shaped lamp heaters 31 serving as heating sources, and a diffusion plate for diffusing light and heat by the lamp heater 31. 32. The plurality of lamp heaters 31 are fixed to the lower surface side of the lid portion 12 of the processing chamber 1 via a specific jig (not shown), and are arranged horizontally (in the direction orthogonal to the plane of the paper of Fig. 1) and Upper cover substrate Above the 9th, the lamp heater 31 has excellent switching performance, and applies a large amount of heat to the substrate 9 during irradiation ('1, but the residual heat after stopping is extremely small. Moreover, the lamp heater 31 is disposed more than the substrate 9. Therefore, there is little doubt that the amount of heat remaining in the lamp heater 3 is stopped to affect the substrate 9. The diffusion plate 32 is fixed to the lid portion 12 of the processing chamber via a specific jig (not shown). On the lower side, horizontally disposed between the plurality of lamp heaters 31 and the substrate 9. The diffusion plate 32 is made of, for example, quartz glass. When the lamp heater 31 is driven, the light and heat irradiated by the lamp heater 31 are One side is uniformized by the diffusion plate 32, and reaches the surface of the substrate 9 to heat the upper surface of the substrate 9. Further, 'the substrate 9 is held on the plurality of substrate holding pins 2 1 and the substrate 9 is driven when the lifting mechanism 23 is driven. The distance from the diffusion plate 32 is changed. The vacuum drying device 1 adjusts the heating strength of the substrate 9 by changing the distance between the substrate 9 and the diffusion plate 32. The cooling portion 40 is attached to the processing chamber 1 The internal cooling is maintained in the substrate holding portion 20 The cooling unit 40 has a cooling plate 4 1 ' fixedly attached to the base 11 of the processing chamber 1 ' inside the cooling plate 41 to form a cooling water passage 42 for cooling water. The cooling water passage 42 is upstream. The end portion of the side is connected to the cooling water supply source 43c via the pipe 43a and the opening and closing valve 43b. Further, the end portion of the downstream side of the cooling water passage 42 of 125619.doc -13 - 200844388 is connected to the drain line via the pipe 43d. Therefore, the opening and closing is opened. In the case of the valve 43b, the cooling water can be supplied from the cooling water supply source 43c to the cooling water passage 42 to cool the cooling plate 41. The cooling plate 41 which is cooled by the cooling water can absorb the heat radiated from the substrate 9, thereby cooling the substrate 9. . • The substrate 9 is held on a plurality of substrate holding pins 2 1 and the distance between the substrate 9 and the cooling plate 41 is changed when the above-described lifting mechanism 23 is driven. Thus, the vacuum drying apparatus 1 can adjust the cooling strength of the substrate 9 by changing the distance between the substrate 9 and the cooling plate 41. Further, the cooling plate 41 is disposed on the lower side than the substrate 9. Therefore, the cooling plate 4 影响 has less influence on the heat caused by the substrate 9 when it is not cooled. The air supply unit 50 supplies nitrogen gas to a piping system for use in the processing chamber. The gas supply unit 50 has discharge portions 51a, 51b, and 51b formed in the lid portion 12 of the processing chamber 1 and a piping portion 52 for supplying nitrogen gas to the discharge portions 51a, 51b, and 51. The piping portion 52 is composed of a combination of a plurality of pipes 52a, 52b, 52c, and 53d, a plurality of opening and closing valves 52e, 52f, and 52g, and a nitrogen gas supply source 52h.
Ci 噴出部51a、51b、51c分別連接配管52a、52b、52c，在 各配管52a、52b、52c之路徑途中，介插著開閉閥526、 52f、52g。又，配管52a、52b、52c之上游侧端部連接於i • 個配管52d，在配管52d之更上遊侧之端部連接氮氣供應源 - 52h。因此，開放開閉閥52e、S2f、52g時，可分別將氮氣 由氮氣供應源52h供應至喷出部51a、51b、5U，由各噴出 部5la、5lb、51c向處理室10内部噴出氮氣。 噴出部51a、51b、51c中，噴出部51a及51c在燈加熱器 31之上方側設有喷出口。因此，由噴出部5u、5ic噴出之 125619.doc -14· 200844388 氮氣具有對燈加熱器31及擴散板32喷附而冷卻燈加熱器31 及擴散板32之效果。又，噴出部51b係貫通擴散板32而延 设至擴散板32之下面側，在擴散板32之下方侧設有噴出 口。因此’由喷出部511)噴出之氮氣具有對基板9之上面噴 附而冷卻基板9之效果。噴出部5 1 b係向基板9之中心位置 • 喷出氮氣。因此，由噴出部51b喷出之氮氣會沿著基板9之 上面而由中心位置向外周側擴散，有效冷卻基板9之全 體。 排氣邛60係吸引排出處理室丨〇内之氣體用之配管系統。 排氣部60具有形成於處理室1〇之基部^之排氣口 、 61b、與將由此等排氣口 6U、6卟吸引之氣體供送至排氣 官線用之配管部62。配管部62係由複數配管62a、62b、 62c、開閉閥62d、及排氣泵62e組合所構成。 在排氣口 61a、61b，分別連接配管62&、6孔，配管 62a、62b之下游側之端部合流而成為一個配管62〇。又， Ο 在配& 62c之路徑途中’介插著開閉閥62d與排氣泵62e， 在配管62c之更下游側之端部連接著排氣管線。因此，開 放開閉閥62d，並驅動排氣泵62e時，處理室^ 〇内之氣體會 被排氣口 61a、6lb吸引而經由配管部62向排氣管線被排出。 • 排氣泵2e可調喊其排氣力。調節排氣泵62e之排氣力 ^強力吸引處理至i 〇内之氣體而可切換將處理室1 〇内減 Μ之狀態、與不大幅將處理室1〇内減壓而排氣之狀態。 又，減壓乾燥裝置1具備有控制上述各部之動作之控制 I5圖系表示減壓乾燥裝置1之上述各部與控制部70之 125619.doc 15 200844388 連接構成之區塊圖。如圖2所示，控制部70係電性連接於 上述之升降機構12a、23、燈加熱器31、開閉閥43b、 52e、52f、52g、62d、及排氣泵62e，控制此等之動作。 控制部70例如係由具有CPU及記憶體之電腦所構成，依照 . 安裝於電腦之程式使電腦執行動作，以執行上述各部之控 制。 ’ <2·減壓乾燥裝置之動作> ( 接著，一面參照圖3之流程圖及圖4〜圖8之動作狀態圖， 說明有關距有上述構成之減壓乾燥裝置1之動作。又，以 下說明之動作係透過控制部70控制上述之升降機構12a、 23、燈加熱器 31、開閉閥 43b、52e、52f、52g、62d、及 排氣泵62e等之動作而執行。 在此減壓乾燥裝置1中，處理基板9時，首先，將上面塗 布光抗餘膜之基板9搬入處理室1〇内（步驟;§1，圖4之狀 態）’具體而言，首先，減壓乾燥裝置1藉升降機構1以使 I; 處理室10之蓋部12上升。而，藉特定之搬送機器人80將基 板9搬入處理室1〇内部，將基板9載置於複數基板保持銷以 上。基板9之搬入完畢時，搬送機器人8〇向處理室1〇之外 部退避’減壓乾燥裝置丨使處理室1〇之蓋部12下降而密閉 、 處理室10内部。 在此’搬入基板9時之處理室1〇内之溫度（更正確言之， 在處理室10内，載置基板9之位置之溫度）過高時，基板9 之上面之未乾燥之光抗蝕膜會被加熱而發生突然沸騰，導 致基板9之上面發生處理不均。因此，在搬入基板9時，最 125619.doc -16 - 200844388 好預先將處理室1 〇内之溫度降低某種程度。表1係表示在 本實施型態之減壓乾燥裝置1中，調查搬入基板9時之處理 室10内之溫度、與處理後之基板9之表面狀態之關係之結 果。在表1中，「〇」表示處理後之基板9之表面並未確認有 處理不均，「△」表示處理後之基板9之表面局部地確認有 處理不均’「X」表示基板9之表面全面地確認有處理不 均。由表1之結果，可知··將基板9載置於基板保持銷21上 時’處理室10内之溫度較好為預先設定於40它以下，更好 為預先設定於3 5 °C以下。 [表1]The Ci ejecting portions 51a, 51b, and 51c are connected to the pipes 52a, 52b, and 52c, respectively, and the opening and closing valves 526, 52f, and 52g are inserted in the middle of the paths of the pipes 52a, 52b, and 52c. Further, the upstream end portions of the pipes 52a, 52b, and 52c are connected to the i-pipes 52d, and the nitrogen supply source - 52h is connected to the upstream side of the pipes 52d. Therefore, when the opening and closing valves 52e, S2f, and 52g are opened, nitrogen gas can be supplied from the nitrogen gas supply source 52h to the discharge portions 51a, 51b, and 5U, respectively, and nitrogen gas can be ejected into the processing chamber 10 from the respective discharge portions 51a, 51b, and 51c. Among the discharge portions 51a, 51b, and 51c, the discharge portions 51a and 51c are provided with discharge ports on the upper side of the lamp heater 31. Therefore, 125619.doc -14·200844388, which is ejected from the discharge portions 5u and 5ic, has an effect of spraying the lamp heater 31 and the diffusion plate 32 to cool the lamp heater 31 and the diffusion plate 32. Further, the discharge portion 51b extends through the diffusion plate 32 to the lower surface side of the diffusion plate 32, and a discharge port is provided below the diffusion plate 32. Therefore, the nitrogen gas ejected by the ejecting portion 511 has an effect of ejecting the upper surface of the substrate 9 to cool the substrate 9. The ejection portion 5 1 b is directed to the center of the substrate 9 • Nitrogen gas is ejected. Therefore, the nitrogen gas ejected from the ejecting portion 51b is diffused from the center portion to the outer peripheral side along the upper surface of the substrate 9, and the entire substrate 9 is effectively cooled. The exhaust port 60 is a piping system for sucking the gas discharged into the processing chamber. The exhaust unit 60 has an exhaust port formed at the base of the processing chamber 1b, 61b, and a piping portion 62 for supplying the gas sucked by the exhaust ports 6U and 6卟 to the exhaust gas line. The piping portion 62 is composed of a combination of a plurality of pipes 62a, 62b, and 62c, an opening and closing valve 62d, and an exhaust pump 62e. The exhaust pipes 61a and 61b are connected to the pipes 62 & and 6 holes, respectively, and the downstream end portions of the pipes 62a and 62b are merged to form one pipe 62〇. Further, 开 the opening and closing valve 62d and the exhaust pump 62e are inserted in the middle of the route of the & 62c, and the exhaust line is connected to the downstream end of the pipe 62c. Therefore, when the opening and closing valve 62d is opened and the exhaust pump 62e is driven, the gas in the processing chamber is sucked by the exhaust ports 61a and 61b and discharged to the exhaust line via the piping portion 62. • The exhaust pump 2e can be tuned for its exhaust force. The exhausting force of the exhaust pump 62e is adjusted. The gas in the processing chamber 1 is strongly sucked and the state in which the inside of the processing chamber 1 is reduced is switched, and the state in which the inside of the processing chamber 1 is not decompressed and exhausted is greatly reduced. Further, the vacuum drying apparatus 1 is provided with a control for controlling the operation of each of the above-mentioned units. The figure I5 shows a block diagram in which the respective units of the reduced-pressure drying apparatus 1 are connected to the control unit 70, 125619.doc 15 200844388. As shown in FIG. 2, the control unit 70 is electrically connected to the above-described elevating mechanisms 12a and 23, the lamp heater 31, the opening and closing valves 43b, 52e, 52f, 52g, and 62d, and the exhaust pump 62e, and controls the operations. . The control unit 70 is constituted, for example, by a computer having a CPU and a memory, and the computer is executed in accordance with a program installed in the computer to execute the control of each of the above units. '<2·Operation of Decompression Drying Apparatus> (The operation of the decompression drying apparatus 1 having the above configuration will be described with reference to the flowchart of Fig. 3 and the operation state diagrams of Figs. 4 to 8 . The operation described below is executed by the control unit 70 controlling the operations of the above-described elevating mechanisms 12a and 23, the lamp heater 31, the opening and closing valves 43b, 52e, 52f, 52g, and 62d, and the exhaust pump 62e. In the pressure drying apparatus 1, when the substrate 9 is processed, first, the substrate 9 on which the photoresist film is applied is carried into the processing chamber 1 (step: § 1, state of FIG. 4). Specifically, first, drying under reduced pressure The apparatus 1 raises the lid portion 12 of the processing chamber 10 by the elevating mechanism 1 , and the substrate 9 is carried into the processing chamber 1 by the transfer robot 80, and the substrate 9 is placed on the plurality of substrate holding pins. When the loading of the robot 9 is completed, the transport robot 8 is evacuated to the outside of the processing chamber 1 to perform the decompression drying device, and the lid portion 12 of the processing chamber 1 is lowered and sealed, and the inside of the processing chamber 10 is closed. The temperature inside the chamber 1 (more correctly, at When the temperature at the position where the substrate 9 is placed in the chamber 10 is too high, the undried photoresist film on the upper surface of the substrate 9 is heated to suddenly boil, resulting in uneven processing on the upper surface of the substrate 9. When the substrate 9 is carried in, the temperature of the inside of the processing chamber 1 is lowered to some extent in the most 125619.doc -16 - 200844388. Table 1 shows the vacuum drying apparatus 1 of the present embodiment, when the substrate 9 is loaded and loaded. The results of the relationship between the temperature in the processing chamber 10 and the surface state of the substrate 9 after the treatment. In Table 1, "〇" indicates that the surface of the substrate 9 after the processing was not confirmed to have uneven processing, and "△" indicates processing. The surface of the subsequent substrate 9 was partially confirmed to have unevenness of treatment. "X" indicates that the surface of the substrate 9 was completely unevenly treated. As a result of Table 1, it was found that the substrate 9 was placed on the substrate holding pin 21. The temperature in the processing chamber 10 is preferably set to be lower than 40 in advance, and more preferably set to be lower than 35 ° C. [Table 1]
處理室内溫度 23〇C 30°C 35〇C 40°C 45〇C 結果 〇 〇 〇 Δ X 其次’減壓乾燥裝置開始施行處理室i 〇内之減壓（步驟 S2，圖5之狀態），具體而言，減壓乾燥裝置i開放排氣部 60之開閉閥62d ’並驅動排氣泵62e，由處理室1 〇内部之排 ϋ 氣口 6 1 a、6 1 b強制排氣，以減壓處理室丨〇内部。減壓處理 室10内部時’可使塗布於基板9之表面之光抗蝕膜所含之 /谷媒成分氣化。藉此，使基板9之表面上之光抗#膜乾燥。 圖9係處理室1〇内之壓力變化之圖。減壓乾燥裝置1係在 • 減壓剛開始後之一定時間之間，將排氣泵02e之排氣力設 定於較弱值。藉此，如圖9中之T1所示，緩慢地使處理室 10内部減壓。而，在減壓開始經過一定時間後，減壓乾燥 裝置1使排氣泵62e之排氣力上升，如圖9中之T2所示，強 力地使處理室10内部減壓。如此，減壓乾燥裝置1係分2階 125619.doc •17· 200844388 段使處理室1 0内部減壓。因此，可防止處理室丨〇内之急遽 之壓力變化’避免基板9上之光抗餘膜所含之溶媒成分突 然沸騰。 在減壓開始經過特定時間後，減壓乾燥裝置1 一面繼續 施行處理室10内之減壓，一面開始基板9之加熱（步驟S3， 圖6之狀態），具體而言，減壓乾燥裝置1驅動燈加熱器 31，經由擴散板32均勻地加熱基板9之上面。藉此，使基 板9上之光抗蝕膜所含之溶媒成分升溫，進一步促進溶媒 成分之氣化。如此，減壓乾燥裝置丨併用處理空間之減壓 與對基板9之加熱，以提高光抗蝕膜之乾燥效率。 其後，減壓乾燥裝置“吏排氣泵62e之排氣力降低，並開 放供氣部之開閉閥52e、52f、52g，將氮氣供應至處理室 1〇内。藉此，如圖9中之T3所示，使處理室1〇内部回復略 低於常壓Po略低之壓力（例如，lxl〇4〜lxl〇5 pa)。而，減 壓乾燥裝置1係在使處理室10内之壓力上升之狀態，繼續 燈加熱器3 1之加熱。 處理室10内之壓力上升時，可提高由燈加熱器31對基板 9之熱之傳播效率。因此，基板9之上面可有效被加熱，可 進一步進行光抗#膜中之溶媒成分之氣化。又，在此，繼 績進行由處理室1G之排氣’故由光抗餘膜氣化之溶媒成分 會迅速被排出至處理室1()之外部。因&，處理室1〇内部無 被溶媒成分污染之虞。x，在此時點，光抗㈣之乾燥已 進行某種程度，因Λ，即使強力地將基板9之上面加熱， 光抗蝕膜中之溶媒成分也無突然沸騰之虞。 125619.doc •18- 200844388 又，加熱基板9時，斷續地或連續地驅動基板保持部π 之升降機構23，使基板9徐徐上升。藉此，使對基板9之加 熱之強度（施加至基板9之熱量）徐徐上升，一面防止溶媒成 分之突然沸騰及加熱不均，一面提高加熱效率。由於在燈 ‘ 加熱器3 1與基板9之間配置有擴散板32，故由光抗蝕膜氣 化之溶媒成分並無附著於燈加熱器3 1而污染燈加熱器3丨之 表面之虞。 特定時間之加熱結束時，減壓乾燥裝置1停止燈加熱器 3 1而結束基板9之加熱。燈加熱器3 1之開關性能優異，且 在處理至10内，配置於比基板9更靠近上方側。因此，停 止燈加熱器31後之餘熱對基板9造成之影響之疑慮也少。 尤其，在下次之基板搬入時，燈加熱器3丨之餘熱因熱對流 傳達至基板9而加熱基板9之疑慮較少。 接著’減壓乾燥裝置1開始施行冷卻部4〇對基板9之冷卻 (步驟S4，圖7之狀態），具體而言，減壓乾燥裝置i係開放 〇 開閉閥43b，將冷卻水供應至冷卻板41内之冷卻水路42， 以冷卻冷卻板41。而，使被冷卻之冷卻板41吸收由基板9 放射之熱，以冷卻基板9。 - 在冷卻處理時，減壓乾燥裝置1也繼續執行由喷出部 ' 51a、51b、51c之氮氣之噴出。由噴出部5卟喷出之氮氣喷 附在基板9之上面’以促進基板9之冷卻。因此，基板9之 上面側可更迅速且均勻地被冷卻。又，由喷出部5丨a及5 j c 嘴出之氮氣係被喷附至燈加熱器3 1及擴散板3 2，以促進燈 加熱器31及擴散板32之冷卻。因此，可進一步降低燈加熱 125619.doc -19- 200844388 器31及擴散板32之餘熱，更均勻地冷卻基板9。 又，在冷卻基板9時，斷續地或連續地驅動基板保持部 20之升降機構23，使基板9徐徐下降。藉此，使對基板9之 冷卻之強度（由基板9吸收之熱量）徐徐上升，一面防止冷卻 • 不均，一面提高冷卻效率。不久，基板保持銷2 1之頭部下 降至比冷卻板41之上面更下方時，基板9由基板保持銷21 被移載至冷卻板41上，基板9係在接觸保持於冷卻板41上 之狀態被直接加熱。 其後，減壓乾燥裝置1由處理室10搬出冷卻後之基板 9(步驟S5，圖8之狀態），具體而言，減壓乾燥裝置1係停 止排氣泵62e而使處理室1〇内部回復至常壓。而，減壓乾 燥裝置1係使複數基板保持銷21上升，藉以使基板9離開冷 卻板。其後，減壓乾燥裝置1藉升降機構12a使處理室10之 蓋部12上升’將搬送機器人go***處理室1〇内部，由搬送 機器人8 0接受基板保持銷2 1上之基板9而將其搬出處理室 U 10之外部。利用以上，完成對1片基板9之減壓乾燥處理、 加熱處理及冷卻處理。 如上所述，此減壓乾燥裝置丨具備將處理室1〇之内部減 壓之功能，並具備將處理室i 0内之基板9加熱用之加熱部 • 3〇與將處理室10内之基板9冷卻用之冷卻部40。因此，減 壓乾燥裝置1對基板9施行減壓乾燥處理後，不必搬送基板 9，即可加熱•冷卻。從而，可全體地迅速施行減壓乾燥 處理、加熱處理及冷卻處理。又，因無必要為加熱處理及 冷卻處理而分別設置別個裝置，故在全體上可減少裝置之 125619.doc -20 - 200844388 佔有面積。 9又，因減壓乾燥裝置丨之加熱部3〇係由上方側加熱基板 9因此，非加熱時之餘熱對基板9造成影響之疑慮較少。 又因減壓乾燥裝置1之冷卻部40係配置於基板9之下方 • 側因此，非冷卻時冷卻板41對基板9造成熱的影響之疑 彳足而可加熱及冷卻基板9而不會發生加熱不均 及冷卻不均。 f) 又，加熱部30係在開始處理室10内之減壓，經過特定時 間後，將熱施加至基板9。因此，加熱部3〇將熱施加至基 板9時，已在進行光抗蝕膜之減壓乾燥處理某種程度。從 而，可一面防止光抗蝕膜之突然沸騰及因急遽乾燥而使加 熱變仔不均等’ 一面加熱基板9。 < 3.變形例> 以上，已說明有關本發明之一實施型態，但本發明並不 限疋於上述之例。例如，在上述之例中，係在步驟S4之冷 U 卻處理中施行由喷出部5la、51b、51c氮氣之喷出，但也 可在冷卻處理之初期階段不施行氮氣之喷出，而由冷卻處 理之途中施行氮氣之喷出。如此，可更緩慢地冷卻基板 - 9，故可進一步降低冷卻不均之發生。 • 又，在上述之例中，係由減壓乾燥處理（步驟S2)之途中 開始基板9之加熱（步驟S3)，但也可在其他之時點開始加 熱。例如，也可在減壓乾燥處理完畢，使處理室丨〇内部回 復壓力後開始基板9之加熱。又，也可在減壓乾燥處理之 初期階段（例如圖9中之T1之間）開始基板9之加熱。又，加 125619.doc •21 - 200844388 熱口P30未必需要在步驟§3之前使其停止。例如，也可在步 驟。之⑴事先將燈加熱器3 1預熱至不將熱供應至基板9 之私度，在步驟S3，提高燈加熱器31之輸出而將熱供應至 基板9。 • 又，在上述之例中，係藉使基板保持銷21升降移動，而 . 使基W對加熱部30接近或離開，但也可採用將基板9之高 度固定，而使加熱部30對基板9接近或離開之構成。例如 Γ j可採用將燈加熱器31及擴散板32連接至丨個支持構件， 藉特定之升降機構使支持構件升降，藉以使燈加熱器^及 擴散板32成一體地升降移動之構成。又，同樣地，也可採 用使冷卻板41升降移動之構成。 又’在上述之例中，係在加熱部30使用燈加熱器3 i， 仁也可使用鎳鉻線等其他加熱源取代燈加熱器3丨。但， 燈加熱器3 1具有非加熱時之餘熱極小，僅在必要時才對基 板9供應熱量之優點。 G 又’在上述之例中，係使用石英玻璃構成之擴散板32， 但也可使用鋁（A1)等金屬構成之擴散板32。但，石英玻璃 構成之擴散板32具有蓄熱量極小，僅在必要時才對基板9 - 供應熱量之優點。 • 又，上述之減壓乾燥裝置1係用於處理液晶顯示裝置用 之角形玻璃基板，但本發明之減壓乾燥裝置也可對半導體 曰曰圓、PDP用玻璃基板、光碟用基板等其他之基板施行處 理。 【圖式簡單說明】 125619.doc -22- 200844388 圖1係本發日月 > 电 圖 ΟProcessing room temperature 23〇C 30°C 35〇C 40°C 45〇C Result 〇〇〇Δ X Next 'The decompression drying device starts the decompression in the treatment chamber i 步骤 (step S2, state of Fig. 5), Specifically, the decompression drying device i opens the opening and closing valve 62d' of the exhaust unit 60 and drives the exhaust pump 62e, forcibly exhausting the exhaust ports 6 1 a, 6 1 b inside the processing chamber 1 to decompress The interior of the chamber is treated. When the inside of the pressure-reducing chamber 10 is used, the /-grain component contained in the photoresist film applied to the surface of the substrate 9 can be vaporized. Thereby, the photo-resistance film on the surface of the substrate 9 is dried. Figure 9 is a graph of pressure changes in the chamber 1 . The vacuum drying apparatus 1 sets the exhaust force of the exhaust pump 02e to a weak value between a certain time after the start of the decompression. Thereby, as shown by T1 in Fig. 9, the inside of the processing chamber 10 is slowly depressurized. On the other hand, after a certain period of time has elapsed since the start of the pressure reduction, the decompressing and drying device 1 raises the exhausting force of the exhaust pump 62e, and as shown by T2 in Fig. 9, the inside of the processing chamber 10 is strongly depressurized. Thus, the vacuum drying apparatus 1 is divided into two stages 125619.doc • 17· 200844388 to decompress the inside of the processing chamber 10 . Therefore, it is possible to prevent the sudden pressure change in the processing chamber ’ from avoiding sudden boiling of the solvent component contained in the photo-resistance film on the substrate 9. After a certain period of time has elapsed since the start of the pressure reduction, the vacuum drying apparatus 1 continues to perform the pressure reduction in the processing chamber 10, and starts heating of the substrate 9 (step S3, the state of FIG. 6). Specifically, the vacuum drying apparatus 1 The lamp heater 31 is driven to uniformly heat the upper surface of the substrate 9 via the diffusion plate 32. Thereby, the solvent component contained in the photoresist film on the substrate 9 is heated to further promote vaporization of the solvent component. Thus, the vacuum drying apparatus 丨 uses the pressure reduction of the processing space and the heating of the substrate 9 to improve the drying efficiency of the photoresist film. Thereafter, the decompression drying device "the exhaust force of the exhaust pump 62e is lowered, and the opening and closing valves 52e, 52f, and 52g of the air supply portion are opened, and nitrogen gas is supplied into the processing chamber 1". Thereby, as shown in FIG. As shown by T3, the inside of the processing chamber 1 is returned to a pressure slightly lower than the normal pressure Po (for example, lxl 〇 4 to lxl 〇 5 pa), and the vacuum drying apparatus 1 is placed in the processing chamber 10. When the pressure rises, the heating of the lamp heater 31 is continued. When the pressure in the processing chamber 10 rises, the heat propagation efficiency of the substrate 9 by the lamp heater 31 can be improved. Therefore, the upper surface of the substrate 9 can be effectively heated. Further, the vaporization of the solvent component in the photo-resistance film can be further performed. Here, the solvent component of the process chamber 1G is exhausted, so that the solvent component vaporized by the photo-resistance film is quickly discharged to the process chamber 1 Outside of (), due to &, there is no contamination inside the processing chamber 1 by the solvent component. x, at this point, the drying of the photoreaction (4) has been carried out to some extent, because even if the substrate 9 is strongly placed above Heating, the solvent component in the photoresist film does not suddenly boil. 125619.doc •18- 200844388 When the substrate 9 is heated, the elevating mechanism 23 of the substrate holding portion π is intermittently or continuously driven to gradually increase the substrate 9. Thereby, the strength of the heating of the substrate 9 (the amount of heat applied to the substrate 9) is gradually increased. The heating efficiency is improved while preventing sudden boiling and uneven heating of the solvent component. Since the diffuser 32 is disposed between the lamp 'heater 31 and the substrate 9, the solvent component vaporized by the photoresist film does not adhere. The lamp heater 3 1 contaminates the surface of the lamp heater 3 虞. When the heating for a specific time is completed, the vacuum drying device 1 stops the lamp heater 31 and ends the heating of the substrate 9. The lamp heater 3 1 is switched The performance is excellent, and it is disposed closer to the upper side than the substrate 9 in the process of 10. Therefore, there is little concern that the residual heat after stopping the lamp heater 31 affects the substrate 9. Especially, when the substrate is carried in the next time, The heat of the lamp heater 3 is transmitted to the substrate 9 due to heat convection, and there is less concern that the substrate 9 is heated. Next, the vacuum drying device 1 starts cooling of the substrate 9 by the cooling unit 4 (step S4, state of Fig. 7). Specific In other words, the reduced-pressure drying device i is opened and closed, and the cooling water is supplied to the cooling water passage 42 in the cooling plate 41 to cool the cooling plate 41. The cooled cooling plate 41 absorbs the heat radiated from the substrate 9. In order to cool the substrate 9. - At the time of the cooling treatment, the vacuum drying apparatus 1 also continues to discharge the nitrogen gas from the ejection portions ' 51a, 51b, 51c. The nitrogen gas ejected from the ejection portion 5 is sprayed on the substrate 9 The above is used to promote the cooling of the substrate 9. Therefore, the upper surface side of the substrate 9 can be cooled more quickly and uniformly. Further, the nitrogen gas which is discharged from the ejection portions 5a and 5jc is sprayed to the lamp heater 3 1 and a diffusion plate 32 to promote cooling of the lamp heater 31 and the diffusion plate 32. Therefore, it is possible to further reduce the residual heat of the lamps 31 and the diffuser 32, and to more uniformly cool the substrate 9. Further, when the substrate 9 is cooled, the elevating mechanism 23 of the substrate holding portion 20 is intermittently or continuously driven to gradually lower the substrate 9. Thereby, the strength of the cooling of the substrate 9 (the amount of heat absorbed by the substrate 9) is gradually increased, and the cooling efficiency is improved while preventing the unevenness of cooling. Soon, when the head of the substrate holding pin 21 is lowered below the upper surface of the cooling plate 41, the substrate 9 is transferred to the cooling plate 41 by the substrate holding pin 21, and the substrate 9 is held in contact with the cooling plate 41. The state is heated directly. Thereafter, the vacuum drying apparatus 1 carries out the cooled substrate 9 from the processing chamber 10 (step S5, the state of FIG. 8). Specifically, the vacuum drying apparatus 1 stops the exhaust pump 62e and causes the inside of the processing chamber 1 Revert to normal pressure. On the other hand, the vacuum drying apparatus 1 raises the plurality of substrate holding pins 21 so that the substrate 9 leaves the cooling plate. Thereafter, the vacuum drying apparatus 1 raises the lid portion 12 of the processing chamber 10 by the elevating mechanism 12a. The transport robot go is inserted into the processing chamber 1 and the substrate 9 on the substrate holding pin 2 1 is received by the transport robot 80. It is carried out of the outside of the processing chamber U10. By the above, the vacuum drying treatment, the heat treatment, and the cooling treatment of the one substrate 9 are completed. As described above, the vacuum drying apparatus 丨 has a function of decompressing the inside of the processing chamber 1 , and includes a heating unit for heating the substrate 9 in the processing chamber i 0 and a substrate in the processing chamber 10 . 9 Cooling unit 40 for cooling. Therefore, after the pressure reduction drying apparatus 1 performs the vacuum drying treatment on the substrate 9, it is possible to heat and cool without transporting the substrate 9. Therefore, the reduced-pressure drying treatment, the heat treatment, and the cooling treatment can be quickly performed as a whole. Further, since it is not necessary to separately provide a separate device for the heat treatment and the cooling treatment, the area of the device can be reduced by 125619.doc -20 - 200844388. Further, since the heating unit 3 of the vacuum drying apparatus 加热 heats the substrate 9 from the upper side, there is little concern that the residual heat during non-heating affects the substrate 9. Further, since the cooling unit 40 of the vacuum drying apparatus 1 is disposed on the lower side of the substrate 9, the cooling plate 41 causes heat to the substrate 9 when it is not cooled, and the substrate 9 can be heated and cooled without occurrence of heat. Uneven heating and uneven cooling. f) Further, the heating unit 30 is decompressed in the start of the processing chamber 10, and after a certain period of time, heat is applied to the substrate 9. Therefore, when heat is applied to the substrate 9 by the heating portion 3, the vacuum drying treatment of the photoresist film is performed to some extent. Therefore, the substrate 9 can be heated while preventing the sudden boiling of the photoresist film and the uneven heating due to rapid drying. < 3. Modifications> Although an embodiment of the present invention has been described above, the present invention is not limited to the above examples. For example, in the above-described example, the discharge of the nitrogen gas by the discharge portions 51a, 51b, and 51c is performed in the cold U process of step S4, but the discharge of nitrogen gas may not be performed in the initial stage of the cooling process. Nitrogen is sprayed out during the cooling process. In this way, the substrate - 9 can be cooled more slowly, so that the occurrence of uneven cooling can be further reduced. Further, in the above example, the heating of the substrate 9 is started in the middle of the vacuum drying treatment (step S2) (step S3), but heating may be started at other times. For example, the drying of the substrate 9 may be started after the pressure drying treatment is completed, and the pressure is returned to the inside of the processing chamber. Further, the heating of the substrate 9 may be started in the initial stage of the vacuum drying treatment (e.g., between T1 in Fig. 9). Also, add 125619.doc •21 - 200844388 Hot port P30 does not necessarily need to stop it before step §3. For example, it can also be in the step. (1) The lamp heater 31 is preheated in advance until the heat is supplied to the substrate 9, and in step S3, the output of the lamp heater 31 is increased to supply heat to the substrate 9. • In the above example, the substrate holding pin 21 is moved up and down, and the base W is brought close to or away from the heating unit 30. However, the height of the substrate 9 may be fixed, and the heating portion 30 may be opposed to the substrate. 9 composition of approaching or leaving. For example, 灯 j may be configured by connecting the lamp heater 31 and the diffusing plate 32 to the one supporting member, and raising and lowering the supporting member by a specific lifting mechanism, whereby the lamp heater and the diffusing plate 32 are integrally moved up and down. Further, similarly, a configuration in which the cooling plate 41 is moved up and down may be employed. Further, in the above-described example, the lamp heater 3 i is used in the heating unit 30, and other heating sources such as a nickel-chromium wire may be used instead of the lamp heater 3A. However, the lamp heater 31 has the advantage that the residual heat at the time of non-heating is extremely small, and the heat is supplied to the substrate 9 only when necessary. G In the above example, the diffusion plate 32 made of quartz glass is used. However, a diffusion plate 32 made of a metal such as aluminum (A1) may be used. However, the diffusing plate 32 composed of quartz glass has an advantage that the heat storage amount is extremely small, and the heat is supplied to the substrate 9 - only when necessary. Further, the above-described vacuum drying apparatus 1 is used for processing a glass substrate for a liquid crystal display device, but the vacuum drying apparatus of the present invention may be used for semiconductor rounding, a glass substrate for PDP, a substrate for a disk, and the like. The substrate is processed. [Simple description of the diagram] 125619.doc -22- 200844388 Figure 1 is the date of the present day > electrogram Ο
知a之一實施型態之減壓乾燥梦罢 。 农直之縱 圖2係表示控制部與各部之連接構成之區塊圖。 圖3係表不減壓乾燥裝置之處理流程之流程圖。 圖4係減壓乾燥裝置之動作狀態圖。 圖5係減壓乾燥裝置之動作狀態圖。 圖6係減壓乾燥裝置之動作狀態圖。 圖7係減壓乾燥裝置之動作狀態圖。 圖8係減壓乾燥裝置之動作狀態圖。 圖9係處理室内之壓力變化之圖。 【主要元件符號說明】 減壓乾燥裝置 基板 處理室 基板保持部 基板保持銷 升降機構 加熱部 燈加熱器 擴散板 冷卻部 冷卻板 供氣部 1 9 10 20 21 23 30 31 32 40 41 50 51a、51b、51c 125619.doc -23 - 200844388 52e、52f、52g 60 62e 70 開閉閥 排氣部 排氣泵 控制部 125619.doc -24-Know one of the implementation of the type of decompression and dry dreams. Fig. 2 is a block diagram showing the connection between the control unit and each unit. Fig. 3 is a flow chart showing the processing flow of the non-decompression drying apparatus. Fig. 4 is a view showing the operation state of the vacuum drying apparatus. Fig. 5 is a view showing the operation state of the vacuum drying apparatus. Fig. 6 is a view showing the operation state of the vacuum drying apparatus. Fig. 7 is a view showing the operation state of the vacuum drying apparatus. Fig. 8 is a view showing the operation state of the vacuum drying apparatus. Figure 9 is a graph of pressure changes in the processing chamber. [Description of main component symbols] Decompression drying device Substrate processing chamber Substrate holding portion Substrate holding pin lifting mechanism Heating portion Lamp heater diffusion plate Cooling portion Cooling plate Air supply unit 1 9 10 20 21 23 30 31 32 40 41 50 51a, 51b 51c 125619.doc -23 - 200844388 52e, 52f, 52g 60 62e 70 On-off valve exhaust part exhaust pump control unit 125619.doc -24-