TWI337395B - Image sensor package - Google Patents

Image sensor package Download PDF

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Publication number
TWI337395B
TWI337395B TW096140291A TW96140291A TWI337395B TW I337395 B TWI337395 B TW I337395B TW 096140291 A TW096140291 A TW 096140291A TW 96140291 A TW96140291 A TW 96140291A TW I337395 B TWI337395 B TW I337395B
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TW
Taiwan
Prior art keywords
conductive
image sensor
glass
image sensing
sensor package
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TW096140291A
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Chinese (zh)
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TW200919654A (en
Inventor
Ching Lung Jao
Yu Te Chou
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Hon Hai Prec Ind Co Ltd
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Priority to TW096140291A priority Critical patent/TWI337395B/en
Publication of TW200919654A publication Critical patent/TW200919654A/en
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Publication of TWI337395B publication Critical patent/TWI337395B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Description

1 1337395 099年11月12日核正替换頁 六、發明說明:’. 【發明所屬之技術領域】 [0001] 本發明是關於影像感測器封裝’特別是關於一種小尺寸 影像感測器封裝。 【先前技術】 [0002] 隨著電子產品之高智慧化、高集成度及小型化之趨勢, 半導體元件封裝也趨向於小型化、高密度方向發展。 [0003] 請參閱圖1,先前之一種半導體封裝結構10,其包括一基 板1 、多個導電片2、一半導體晶片3、一導線4、多個導 電端子5、一個支撐體6及一個玻璃蓋體7。所述基板1上 開設有一凹槽8,所述多個導電片2分別設置於所述凹槽8 周圍之基板1上。所述半導體晶片3設置於所述基板1之凹 槽8内,並藉由所述導線4將所述半導體晶片3電性連接至 所述設置於基板1上之導電片2上。所述導電端子5設置於 所述基板1之四周側面,該導電端子5分別與所述導電片2 相電連接。所述支撐體G設置於所述基板1之凹槽S之周圍 ,並將所述導電片2壓合於其底部。所述玻璃蓋體7則罩 設於所述支撐體6上將半導體晶月3密封於所述基板1之凹 槽8内。 [0004] 該半導體封裝結構10採用基板1作為半導體晶片3之支撐 體,並藉由導線4、導電片2及導電端子5將所述半導體晶 片3與外部電路相電連接,其導電線路長,訊號傳輸過程 中損失嚴重,很難獲得高品質之圖像訊號;採用導線4進 行電性連接半導體晶片3需要較大之空間以便進行打線作 業,從而造成該半導體晶片3體積較大;此外,基板1作 096140291 表單編號Α0101 第4頁/共14頁 0993406455-0 1337395 099年11月12日核正替換頁 為該半導體晶片3之支撐件極大之增加了該半導體封裝結 構10之體積及重量。因此,該半導體封裝結構10已不能 夠滿足現今半導體之發展趨勢。 f發明内容】 * 杳鑒於此’有必要提供一種可有效減小封裝體積之影像 [0005] ^ 感測器封裝。 /種影像感測器封裝,其包括一個影像感測晶片、多個 [0006] 連接塊、一個導電玻璃以及一個電連接器。所述影像感 測晶片包括一個上表面’於其上表面上形成有一個影像 威測區,圍繞該影像感測區於所述影像感測器之上表面 上形成有多個與所述連接塊電連接之晶片焊墊。所述導 電玻璃包括一個玻璃基板’於所述玻璃基板對應於所述 影像感測晶片之上表面一側之表面上形成有一端對應影 像感測晶片之晶片焊墊之多條導電軌跡,該導電軌跡之 另一端延伸至該導電玻璃之一側邊緣。所述影像感測晶 片藉由所述連接塊電性及結構性連接於所述導電玻璃形 成有導電轨跡之表面’且所述導電玻璃邊緣形成有導電 轨跡之一端延伸出所述影像感測晶片外。所述電連接器 包括第一連接端及第二連接端,該電連接器藉由其第一 連接端與所述導電玻璃邊緣上之導電軌跡相電連接,其 第二連接端與外部電路相電連接。 [0〇〇7]相較先前技術,所述影像感測器封裝採用導電玻璃用以 承載及電連接影像感測晶片,省去了先前技術中之基板 ,從而極大之減小了影像感測器封裝之體積,同時還具 有節約原材料、降低成本之功效。影像感測晶片與導電 096140291 表單編號A0101 第5頁/共丨4頁 0993406455-0 1337395 [0008] [0009] [0010] [0011] 096140291 099年11月12日核正菩换頁 玻璃之間採用連择塊進行電連接,其導電路徑短,且其 僅需要很小之容置空間’從而進一步之縮小了所述影像 感測器封裝之體積。 【實施方式】 · 請參閱圖2,本發明影像感測器封裝之較佳實施例,該影 像感測器100包括一個影像感測器晶片110、多個連接塊 120 ' —個導電玻璃]4〇以及一個電連接器〗50。 所述景> 像感測器晶片11 〇為一光敏元件,可將光訊號轉化 為電訊號,該影像感測晶片110包括一上表面112,於其 上表面U2之辛心位置形成有一感測區Π4,圍繞該感測 區114於所述影像感測晶片1,1 〇之上表面丨丨2上設置有多 個晶片焊墊116。 所述連接塊120用以電性及結構性連接所述影像感測器晶 片110至導電玻璃140上。該連接塊可採用金屬導電塊 122進行電性連接,而於該金屬導電塊122之外部包覆粘 膠124進行結構性連接,將所述影像感測晶片11〇固接於 所述導電玻璃140上,並將所述影像感測晶片11〇之感測 區114密封起來從而防止其被灰塵、水氣等污染。可以理 解該連接塊120也可採用導電膠、異方性導電膠、異方性 導電薄膜等連接裝置。當所述電連接塊120採用導電膠、 異方性導電膠、異方性導電薄膜等兼具導電性及粘接性 之導電塊120時,所述粘膠124便可省去。 所述導電玻璃140包括玻璃基板142,該玻璃基板142至 少有一邊之尺寸大於與其連接之所述影像感測晶片110之 尺寸,該玻璃基板142具有一下表面144,於其下表面 表箪编號A0101 第6頁/共14頁 0993406455-0 1337395 099年11月12日修正替换頁 1 4 4形成有具有透光性之導電軌跡1 4 6. ’該導電軌跡1 4 6 分別對應所述影像感測晶片U〇之多個晶片焊墊116,且 所述多條導電轨跡146延伸至所述玻璃基板142之四周邊 緣或者一側邊緣,可以理解,因所述導電轨跡丨丨4具有可 透光性’所述導電軌跡146由所述玻璃基板142之一端穿 過該玻璃基板142與所述影像感測晶片11〇之感測區丨14 對應之區域並延伸至所述玻璃基板142之另一端,而不影 響所述影像感測晶片11 〇之感測區丨14正常工作。所述導 電軌跡146為藉由電子束蒸發或物理氣相沉積等方法形成 於所述玻璃基板142上之氧化銦錫薄膜(Indium Tin1 1337395 November 12, 099, the replacement of the nuclear page, the invention description: '. [Technical field of the invention] [0001] The present invention relates to an image sensor package 'particularly relates to a small size image sensor package . [Prior Art] [0002] With the trend toward high intelligence, high integration, and miniaturization of electronic products, semiconductor component packaging has also been trending toward miniaturization and high density. Referring to FIG. 1 , a semiconductor package structure 10 includes a substrate 1 , a plurality of conductive sheets 2 , a semiconductor wafer 3 , a wire 4 , a plurality of conductive terminals 5 , a support 6 , and a glass . Cover body 7. A groove 8 is defined in the substrate 1 , and the plurality of conductive sheets 2 are respectively disposed on the substrate 1 around the groove 8 . The semiconductor wafer 3 is disposed in the recess 8 of the substrate 1, and the semiconductor wafer 3 is electrically connected to the conductive sheet 2 disposed on the substrate 1 by the wire 4. The conductive terminals 5 are disposed on the side surfaces of the substrate 1, and the conductive terminals 5 are electrically connected to the conductive sheets 2, respectively. The support body G is disposed around the groove S of the substrate 1 and presses the conductive sheet 2 to the bottom thereof. The glass cover 7 is disposed on the support body 6 to seal the semiconductor crystal 3 in the recess 8 of the substrate 1. The semiconductor package structure 10 uses the substrate 1 as a support for the semiconductor wafer 3, and electrically connects the semiconductor wafer 3 to an external circuit through the wires 4, the conductive sheets 2, and the conductive terminals 5, and has a long conductive path. In the process of signal transmission, the loss is severe, and it is difficult to obtain a high-quality image signal; the electrical connection of the semiconductor wafer 3 by the wire 4 requires a large space for the wire bonding operation, thereby causing the semiconductor wafer 3 to be bulky; 1 for 096140291 Form No. 101 0101 Page 4 / Total 14 Page 0993406455-0 1337395 The replacement of the semiconductor wafer 3 on November 12, 2008, greatly increases the size and weight of the semiconductor package structure 10. Therefore, the semiconductor package structure 10 cannot meet the development trend of today's semiconductors. f SUMMARY OF THE INVENTION * In view of this, it is necessary to provide an image that can effectively reduce the package size [0005] ^ Sensor package. An image sensor package comprising an image sensing wafer, a plurality of connecting blocks, a conductive glass, and an electrical connector. The image sensing wafer includes an upper surface having an image measuring area formed on an upper surface thereof, and a plurality of connecting blocks are formed on the upper surface of the image sensor around the image sensing area Wafer pads electrically connected. The conductive glass comprises a glass substrate 'on the surface of the glass substrate corresponding to the upper surface side of the image sensing wafer, and a plurality of conductive traces of the wafer pads corresponding to the image sensing wafer are formed on the surface, the conductive The other end of the track extends to one of the side edges of the conductive glass. The image sensing chip is electrically and structurally connected to the conductive glass to form a surface of the conductive track by the connecting block, and the conductive glass edge is formed with one end of the conductive track to extend the image sense Test outside the wafer. The electrical connector includes a first connecting end and a second connecting end. The electrical connector is electrically connected to the conductive track on the edge of the conductive glass by a first connecting end thereof, and the second connecting end is connected to an external circuit. Electrical connection. [0〇〇7] Compared with the prior art, the image sensor package uses conductive glass to carry and electrically connect the image sensing wafer, thereby eliminating the prior art substrate, thereby greatly reducing image sensing. The size of the package, while also saving raw materials and reducing costs. Image Sensing Wafer and Conductive 096140291 Form No. A0101 Page 5 / Total 4 Pages 0993406455-0 1337395 [0008] [0009] [0010] [0011] 096140291 November 12, 2008, the use of nuclear glass By electrically connecting the blocks, the conductive path is short and it requires only a small accommodation space' to further reduce the volume of the image sensor package. [Embodiment] Please refer to FIG. 2, which illustrates a preferred embodiment of the image sensor package of the present invention. The image sensor 100 includes an image sensor wafer 110 and a plurality of connection blocks 120'-conductive glass] 〇 and an electrical connector 〖50. The image sensor wafer 11 is a photosensitive element that converts the optical signal into an electrical signal. The image sensing wafer 110 includes an upper surface 112, and a sensible position on the upper surface U2 forms a feeling. The measuring area Π4 is disposed on the surface 丨丨2 of the image sensing wafer 1,1 围绕 around the sensing area 114 to form a plurality of wafer pads 116. The connecting block 120 is used to electrically and structurally connect the image sensor wafer 110 to the conductive glass 140. The connecting block can be electrically connected by the metal conductive block 122, and the outer surface of the metal conductive block 122 is coated with the adhesive 124 for structural connection, and the image sensing wafer 11 is fixed to the conductive glass 140. Upper, and the sensing area 114 of the image sensing wafer 11 is sealed to prevent it from being contaminated by dust, moisture and the like. It can be understood that the connecting block 120 can also be connected by a conductive adhesive, an anisotropic conductive adhesive, an anisotropic conductive film or the like. When the electrical connection block 120 is made of a conductive paste 120 having conductive and adhesive properties such as a conductive paste, an anisotropic conductive paste or an anisotropic conductive film, the adhesive 124 can be omitted. The conductive glass 140 includes a glass substrate 142 having at least one side having a size larger than a size of the image sensing wafer 110 connected thereto. The glass substrate 142 has a lower surface 144 and is numbered on a lower surface thereof. A0101 Page 6 of 14 0993406455-0 1337395 November 12, 2010 Correction Replacement Page 1 4 4 Forming a conductive track with light transmission 1 4 6. 'The conductive track 1 4 6 corresponds to the image sense respectively Measuring a plurality of wafer pads 116 of the wafer U, and the plurality of conductive traces 146 extend to the peripheral edge or one side edge of the glass substrate 142. It is understood that the conductive track 丨丨4 has The light-transmitting 'the conductive track 146 extends from one end of the glass substrate 142 through the glass substrate 142 to a region corresponding to the sensing region 丨 14 of the image sensing wafer 11 并 and extends to the glass substrate 142 At the other end, the sensing area 丨 14 of the image sensing chip 11 而不 does not affect the normal operation. The conductive trace 146 is an indium tin film formed on the glass substrate 142 by electron beam evaporation or physical vapor deposition or the like (Indium Tin)

Oxide ’ ΠΟ)。該導電薄膜146還可以為碳奈米導電鍍膜 〇 [0012] 所述電連接器150用以將導電玻璃140上之導電軌跡146 與外部電路電連接’其包括一第一連接端152及第二連接 端154。所述第一連接端152與所述導電玻璃140相電性 連接’其中形成於所述電連接器150之第一連接端152上 之電性連接點156分別與導電玻璃140上邊緣上之多條導 電軌跡146相電連接,為連接可靠,於所述電連接器150 之第一連接端152與所述導電玻璃140之形成有導電軌跡 146之下表面之間填充有粘膠153 β所述第二連接端154 包括多個連接端子158用以與外部電路相電連接。優選地 ’所述電連接器150採用柔性電路板,從而使得該影像感 測器封裝100之安裝位置不會因為外部電路之位置而受到 約束,提高了影像感測器封裝100之使用靈活性。 [0013] 本實施例中,採用導電玻璃140用以承載及電連接影像感 096140291 表單編號Α010】 第7頁/共14頁 0993406455-0 1337395 099年11月12日核正替換頁 測晶片110,’省去了先前技術中之基板,從而極大之減小 t 了影像感測器封裝100之體積,同時更具有節約原材料、 降低成本之功效。影像感測晶片110與導電玻璃140之間 採用金屬導電塊122進行電連接,其導電路徑短,且其僅 需要很小之容置空間,從而進一步之縮小了所述影像感 測器封裝100之體積。該影像感測器封裝100體積小,品 質輕,可應用於各種成像設備如手機、數位相機、可檇 式電腦等電子產品中。 [0014] 可以理解,本發明中將所述影像感測晶片110藉由連接塊 120電性及結構性連接於所述導電玻璃140上,為增加連 接可靠性,可於所述影像感測:晶片110與導電玻璃140之 間填充透明粘膠,從而增加了影像感須'丨:晶片110之粘結面 積,從而增加了其粘結強度,提高其粘接可靠性。 [0015] 综上所述,本發明符合發明專利要件,爰依法提出專利 申請。惟,以上所述者僅為本發明之較佳實施方式,本 發明之範圍並不以上述實施方式為限,舉凡熟悉本案技 藝之人士援依本發明之精神所作之等效修飾或變化,皆 應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 [0016] 圖1係先前半導體封裝之刮視圖; [0017] 圖2係本發明影像感測器封裝較佳實施例之剖視圖。 【主要元件符號說明】 [0018] (習知) 半導體封裝結構:10 096140291 表單編號A0101 第8頁/共14頁 0993406455-0 [0019] 1337395 099年11月12日核正替換頁 [0020] 基板:1 i [0021] 導電片:2 [0022] 半導體晶片:3 . [0023] 導線:4 * [0024] 導電端子:5 [0025] 支撐體:6 [0026] 玻璃蓋體:7 [0027] 凹槽:8 [0028] (本發明) [0029] 影像感測器:100 [0030] 影像感測器晶片:110 [0031] 上表面:112 [0032] 感測區· 114 [0033] 晶片焊墊:11 6 [0034] 連接塊:120 [0035] 金屬導電塊:122 [0036] 粘膠:124, 153 [0037] 導電玻璃:140 [0038] 玻璃基板:142 096140291 表單編號A0101 第9頁/共14頁 0993406455-0 1337395 [0039] 下表面:144 [0040] 導電轨跡:146 [0041] 電連接器:150 [0042] 第一連接端:152 [0043] 第二連接端:154 [0044] 電性連接點:156 [0045] 連接端子:158 096140291 表單編號A0101 第10頁/共14頁 099年11月12日修正替換頁 0993406455-0Oxide ’ ΠΟ). The conductive film 146 may also be a carbon nano-conducting coating [0012] The electrical connector 150 is used to electrically connect the conductive traces 146 on the conductive glass 140 to an external circuit, which includes a first connection end 152 and a second Connection end 154. The first connection end 152 is electrically connected to the conductive glass 140. The electrical connection points 156 formed on the first connection end 152 of the electrical connector 150 are respectively on the upper edge of the conductive glass 140. The strip conductive traces 146 are electrically connected to each other for reliable connection. The first connection end 152 of the electrical connector 150 and the lower surface of the conductive glass 140 formed with the conductive traces 146 are filled with a glue 153 β. The second connection end 154 includes a plurality of connection terminals 158 for electrically connecting to an external circuit. Preferably, the electrical connector 150 employs a flexible circuit board such that the mounting position of the image sensor package 100 is not constrained by the location of the external circuitry, improving the flexibility of use of the image sensor package 100. [0013] In this embodiment, the conductive glass 140 is used to carry and electrically connect the image sense 096140291. Form No. Α010] Page 7/14 pages 0993406455-0 1337395 On November 12, 2008, the wafer is replaced by a wafer 110. 'The substrate of the prior art is omitted, thereby greatly reducing the volume of the image sensor package 100, and at the same time saving the raw materials and reducing the cost. The image sensing chip 110 and the conductive glass 140 are electrically connected by using the metal conductive block 122, and the conductive path is short, and only a small accommodation space is required, thereby further reducing the image sensor package 100. volume. The image sensor package is small in size and light in weight, and can be applied to various imaging devices such as mobile phones, digital cameras, and portable computers. [0014] It can be understood that, in the present invention, the image sensing wafer 110 is electrically and structurally connected to the conductive glass 140 by the connecting block 120, and the image sensing can be performed for increasing connection reliability: The transparent adhesive is filled between the wafer 110 and the conductive glass 140, thereby increasing the image sensing area of the wafer 110, thereby increasing the bonding strength and improving the bonding reliability. [0015] In summary, the present invention complies with the requirements of the invention patent, and submits a patent application according to law. However, the above description is only the preferred embodiment of the present invention, and the scope of the present invention is not limited to the above-described embodiments, and equivalent modifications or variations made by those skilled in the art in light of the spirit of the present invention are It should be covered by the following patent application. BRIEF DESCRIPTION OF THE DRAWINGS [0016] FIG. 1 is a cross-sectional view of a prior art semiconductor package; FIG. 2 is a cross-sectional view of a preferred embodiment of an image sensor package of the present invention. [Explanation of main component symbols] [0018] (Generally known) Semiconductor package structure: 10 096140291 Form No. A0101 Page 8 / Total 14 pages 0993406455-0 [0019] 1337395 November 12, 099 Nuclear replacement page [0020] Substrate : 1 i [0021] Conductive sheet: 2 [0022] Semiconductor wafer: 3. [0023] Conductor: 4 * [0024] Conductive terminal: 5 [0025] Support: 6 [0026] Glass cover: 7 [0027] Groove: 8 [0028] (Invention) Image sensor: 100 [0030] Image sensor wafer: 110 [0031] Upper surface: 112 [0032] Sensing area · 114 [0033] Wafer welding Pad: 11 6 [0034] Connection block: 120 [0035] Metal conductive block: 122 [0036] Viscose: 124, 153 [0037] Conductive glass: 140 [0038] Glass substrate: 142 096140291 Form No. A0101 Page 9 / Total 14 pages 0993406455-0 1337395 [0039] Lower surface: 144 [0040] Conductive track: 146 [0041] Electrical connector: 150 [0042] First connection: 152 [0043] Second connection: 154 [0044 ] Electrical connection point: 156 [0045] Connection terminal: 158 096140291 Form number A0101 Page 10 / Total 14 pages November 12, 099 revised replacement 0993406455-0

Claims (1)

099年11月12日 七、申請專利細: , 1 __ ' ''種影像感測器封裝,其包括一個影像感測晶片、多個聯 接塊、一個導電破璃以及一個電連接器,所述影像感測晶 片包括一個上表面,於其上表面上形成有一個影像感測區 ’於所述影像感測區與所述導電玻璃之間填充有透明粘膠 ’圍繞該影像感測區於所述影像感測器之上表面上形成有 夕個晶片焊塾’所述導電玻璃包括一個玻璃基板,於户斤述 破璃基板對應於所述影像感測晶片之上表面一側之表面上 形成有一端對應影像感測晶片之晶片焊墊之多條導電軌跡 ’每條導電轨跡之另一踹延伸至該導電玻璃之至少一側邊 緣’所述影像感測晶片藉由多個連接塊電性及結構性連接 於所述導電玻璃形成有導電軌跡之表面,且所述導電玻璃 邊緣形成有導電轨跡之一端延伸出所述影像感測晶片外, 所述電連接器包括第一連接端及第二連接端,該電連接器 輕由其第一連接端與所述導電玻璃邊緣上之導電軌跡相電 連接,其第二連接端與外部電路相電連接。 2 ·如申請專利範圍第丨項所述之影像感測器封裝,其中,所 述多條導電軌跡具有透光性,所述多條導電軌跡由所述玻 螭基板之一端穿過該玻璃基板與所述影像感測晶片之感測 區對應之區域並延伸至所述玻璃基板之另一端。 3 .如申請專利範圍第1項所述之影像感測器封裝’其中,所 述多個連接塊包括多個金屬導電塊及包覆於所述金屬導電 塊週邊之粘膠。 4 .如申請專利範圍第1項所述之影像感測器封裝’其中’所 述多個連接塊是導電膠。 096140291 表單編號A0101 第11頁/共14頁 0993406455-0 1337395 099年11月12日梭正替^頁 5 .如申請專利範_圍第1項所述之影像感測器封裝,其中,所 It 述多個連接塊是異方性導電膠或異方性導電薄膜。 6.如申請專利範圍第1項所述之影像感測器封裝,其中,所 述導電玻璃上之導電軌跡為氧化銦錫薄膜或者碳奈米導電 薄膜。 7 .如申請專利範圍第1項所述之影像感測器封裝,其中,所 述電連接器之第一連接端與所述導電玻璃形成有導電軌跡 之一側表面之間填充有粘膠。 8 .如申請專利範圍第1項所述之影像感測器封裝,其中,所 述電連接器為一柔性電路板。 096140291 表單編號A0101 第12頁/共14頁 0993406455-0November 12, 099 VII. Application Patent: 1 __ ' '' Image sensor package, including an image sensing wafer, a plurality of coupling blocks, a conductive glass and an electrical connector, The image sensing wafer includes an upper surface, and an image sensing area is formed on the upper surface thereof. A transparent adhesive is filled between the image sensing area and the conductive glass to surround the image sensing area. Forming a wafer soldering surface on the upper surface of the image sensor. The conductive glass includes a glass substrate, and the glass substrate is formed on a surface corresponding to the upper surface side of the image sensing wafer. a plurality of conductive traces having one end corresponding to the wafer pads of the image sensing wafers. 'The other of the conductive traces extends to at least one edge of the conductive glass. The image sensing wafer is electrically connected by a plurality of connecting blocks. And electrically connected to the conductive glass to form a surface of the conductive track, and the conductive glass edge is formed with one end of the conductive track extending out of the image sensing chip, the electrical connector includes And a second end connected to connecting end of the electrical connector of the light by the conductive traces on the first connecting end electrically connected to the conductive glass edge, and a second connecting end electrically connected to an external circuit. The image sensor package of claim 2, wherein the plurality of conductive traces are translucent, and the plurality of conductive traces pass through the glass substrate from one end of the glass substrate And a region corresponding to the sensing region of the image sensing wafer and extending to the other end of the glass substrate. 3. The image sensor package of claim 1, wherein the plurality of connection blocks comprise a plurality of metal conductive blocks and a glue coated around the periphery of the metal conductive blocks. 4. The image sensor package of the invention of claim 1, wherein the plurality of connection blocks are conductive paste. 096140291 Form No. A0101 Page 11 of 14 0993406455-0 1337395 On November 12, 099, the shuttle is replaced by ^page 5. The image sensor package described in Patent Application No. 1, in which it is The plurality of connection blocks are an anisotropic conductive paste or an anisotropic conductive film. 6. The image sensor package of claim 1, wherein the conductive trace on the conductive glass is an indium tin oxide film or a carbon nanotube conductive film. 7. The image sensor package of claim 1, wherein a first connection end of the electrical connector and a side surface of the conductive glass formed with a conductive track are filled with an adhesive. 8. The image sensor package of claim 1, wherein the electrical connector is a flexible circuit board. 096140291 Form No. A0101 Page 12 of 14 0993406455-0
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