I326279 九、發明說明： 【發明所屬之技術領域】 本發明涉及-細紐料’制涉及-朗財有導熱频熱性能 瓷材料。 【先前技術】 人類生活與生產中所使用之產品係由鐵、銅、紹等金屬材料環氧、橡 膠等有機材料與Hi!、耐火材料等無機非金屬材料三大材料製成，究材 料被定義為：經高溫熱處理工藝所合成之無機非金屬材料。I326279 IX. OBJECTS OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to a "fine-material" system involving - Langcai having a thermal conductivity and thermal performance porcelain material. [Prior Art] The products used in human life and production are made of three materials, such as iron, copper, and other metal materials such as epoxy and rubber, and inorganic non-metallic materials such as Hi! and refractory materials. It is defined as: an inorganic non-metallic material synthesized by a high temperature heat treatment process.
陶瓷材料絕大部分係由元素週期表中電負性小之元素與電負性大之元 素所形成之化合娜成’珊料大部分_子鍵，1分以鱗鍵、金屬鍵 為主體^於元素間組娜式多，陶瓷材料具有多種材料之功能，應用範圍 很廣泛》從汽車王業到太空科技均需用到陶曼材料，例如太空科技上之_ 碑，需要具有優異絕熱性能之喊材料，而曰常生活中之_懦要導熱^ 速之陶兗材料，使食物加熱迅速，以節省能源。 一 2002年3月20日公告之中國大陸專利第9811〇939χ號公開了一種具有 咼導熱性能之氮化綱瓷材料，其通過向普通氮化鋁材料中加入工業級添加 劑’如块化倾氧化紀之混合物’於適當工藝條件下製備高導熱氮化^ 瓷，其熱導率最高可達BOWn^K·1。 2004年2月U日公開之美國專利申請第細^测从道公開了一種 具有絕熱性能之陶瓷材料，其通過向陶瓷基體巾加入奈純材來加強陶究材 2之絕熱麟’絲米雜包括：單錄米錄、彡錄树管、碳纖維、 f 法為L喊雜，其t包括陶竞 材料粒子與溶液；將奈米碳材料分散於該陶瓷將料中；將上述含奈米碳材之 陶兗漿料加人-輙模具中断，從啸作出就微之^材料。該 技術通ϋ向陶絲體中加入奈純材使陶竞基體帽傳熱其主要作用之聲 子(固體中傳遞熱量故子)綠開，降低陶瓷材料之熱傳雜能。 奈米碳管具奴向鋪能，即絲碳雜向之鱗導係數於職 時可達6000WW ’而徑向之解雜數卻辭為零，，該美國專 公開之技術巾未能姐糊絲碳奴—優紐能。有此，卿奈米碳 5 1326279 材改善陶瓷材料熱傳性能這—技術仍有改進之空 【發明内容】 二9 以下將以貫施例說明一種陶瓷材料及其製造方法。 為實耻勒容，提供—獅細，其包括： 碳管分佈於齡細數絲碳料目互平行。n複數不升 所述之陶瓷基體基本包括陶瓷粉體與聯結劑。 該陶竞材浙絲龄她上具綠雜 上具有高絕射生能。 彳於^卡石反官邮Most of the ceramic materials are formed by the elements of the electronegativity element and the elements with large electronegativity in the periodic table, which are the majority of the _ sub-keys, and the ones are dominated by scales and metal bonds. There are many kinds of materials in the inter-element, ceramic materials have a variety of material functions, a wide range of applications. From the automotive king industry to space technology, you need to use Tauman materials, such as the space technology, the need to have excellent thermal insulation The material, and the 生活 生活 懦 懦 懦 导热 导热 导热 导热 导热 导热 导热 ^ ^ ^ ^ ^ ^ ^ 兖 , , , , , , A nitriding porcelain material having tantalum thermal conductivity is disclosed by adding a technical grade additive to a common aluminum nitride material, such as bulk decantation, as disclosed in Chinese Patent No. 9811〇939, issued on March 20, 2002. The mixture of Ji's prepared high thermal conductivity nitriding porcelain under the appropriate process conditions has a thermal conductivity of up to BOWn^K·1. In February 2004, U.S. Patent Application, published on U.S.A., discloses a ceramic material having thermal insulation properties, which enhances the thermal insulation of the ceramic material 2 by adding pure natural materials to the ceramic base towel. Including: single-recorded rice, recorded tree tube, carbon fiber, f method is L, which includes Tao Jing material particles and solution; dispersing nano carbon material in the ceramic material; The material of the pottery enamel adds people - the mold is interrupted, and the material is made from Xiao. The technology is used to add the pure material to the ceramic body, so that the phonon (the heat transfer in the solid) of the main function of the Tao Jing base cap heat transfer is green, and the heat transfer energy of the ceramic material is reduced. The carbon nanotubes have a slave shop, that is, the scaly guiding coefficient of the silk carbon miscellaneous can reach 6000WW at the time of occupation, and the radial solution is zero, but the technical towel disclosed in the United States fails to paste. Silk carbon slave - excellent New Energy. In this case, the crystal nano 5 1326279 material improves the heat transfer performance of the ceramic material. The technology still has an improvement. [Summary of the Invention] Hereinafter, a ceramic material and a method for manufacturing the same will be described by way of example. For the sake of shame, the lion is fine, which includes: The carbon tubes are distributed in parallel with the fine-grained carbon materials. n The plurality of ceramic substrates substantially include ceramic powder and a coupling agent. The Tao Jingcai, the silky age of her, has a high degree of absolute energy. ^于卡卡石反官邮
以及，提供-種喊材料之製造方法，其包括以下步驟: 提供一奈米碳管陣列； 向奈米碳管陣列中填充陶究基體； 對填充有喊基體之絲碳辨舰行麵處理，做喊材料。 上述熱壓處理過程之溫度為500〜贿，壓力為1〇4 處理時間基本為一小時至四小時。 β上述陶£材料之製造方法還進__步包括對鎌處理叙喊材料進行 Μ燒結H魏理溫度為.麵^，壓力為1Q4~1()6kg/m2，且 理時間基本為一小時至數十小時。And providing a method for manufacturing a shouting material, comprising the steps of: providing a carbon nanotube array; filling the ceramic carbon nanotube array with a ceramic substrate; and processing the silk carbon-filled ship surface filled with the shattering substrate; Make shouting materials. The temperature of the above hot pressing process is 500~ bribe, and the pressure is 1〇4, and the treatment time is substantially one hour to four hours. The manufacturing method of the above-mentioned pottery material is further advanced. The step consists of Μ sintering the material of the 镰 H sintering, and the temperature is 1Q4~1() 6kg/m2, and the rational time is basically one hour. To tens of hours.
本技術方案之陶瓷材料中分佈有複數相互平行之奈米碳管陣列，由於奈 米碳管單向導熱性能，使該陶瓷材料於奈米碳管軸向上形成複數熱傳遞通 道’具有優異導熱性能；同時奈米碳管徑向上該喊材料具有優異之絕熱性 忐。故，該陶瓷材料同時具有導熱與隔熱性能，為一多功能陶瓷材料。 【實施方式】 下面將結合附圖及實施例對上述陶瓷材料及其製造方法作進一步之詳 細說明。 本菩施例製造陶瓷材料之方法，分以下步驟進行：提供一奈米碳管障 列；向奈米碳管陣列中填充陶瓷基體；對填充有陶瓷基體之奈米碳管陣列進 行熱壓處理，形成陶瓷材料。 以下將對上述製造方法進行具體描述。 首先，提供一奈米碳管陣列。 6 1326279The ceramic material of the technical solution is distributed with a plurality of mutually parallel carbon nanotube arrays. Due to the unidirectional thermal conductivity of the carbon nanotubes, the ceramic material forms a plurality of heat transfer channels in the axial direction of the carbon nanotubes. At the same time, the carbon nanotubes have excellent thermal insulation properties in the radial direction. Therefore, the ceramic material has both heat conduction and heat insulation properties, and is a multifunctional ceramic material. [Embodiment] The above ceramic material and its manufacturing method will be further described in detail below with reference to the accompanying drawings and embodiments. The method for manufacturing a ceramic material according to the present embodiment is carried out in the following steps: providing a nanometer carbon tube barrier; filling the carbon nanotube array with a ceramic substrate; and subjecting the carbon nanotube array filled with the ceramic substrate to hot pressing treatment Forming a ceramic material. The above manufacturing method will be specifically described below. First, an array of carbon nanotubes is provided. 6 1326279
請參閱第一圖，提供一平行放置之基底u與基底12，該基底12位於該 基底11之上方，且兩基底以載具(圖未示)固定為上下層，且其之間距離可^ 意調整。於基底11上均勻沈積一催化劑層13，其材料可為鐵、姑' 錄及其 合金等，其沈積方法可利用熱沈積、電子束沈積或濺射法完成。基底12上 開設有複數注入孔14 〇兩基底之材料可用玻璃、石英、矽或氧化銘等本實 施•例中兩基底均為石夕片。 M 氧化處理基底11上之催化劑層13，使其形成催化劑顆粒(圖未示），將 載有基底11與基底12之載具置於反應爐中(圖未示），於7QQ〜下， 通入碳源氣’生長出奈米碳管陣列15,如第二圖所示’其中碳源氣可爲乙块、 乙煉等氣體’控制反應時間使奈米碳管由基底11之催化劑層13處生長至接 觸基底12’降溫後取出載具。有關奈米碳管陣列15之生長方法已較爲成熟， 具體可參閱文獻 5(^1^1999,283312414 及文獻 Mm.Chem.Soc，2001， 123,11502-11503 ’此外，美國專利第6,35〇,488號亦公開一種大面積生長奈 米碳管陣列之方法。 由於基底11與基底12之間距離可任意調整，故，可根據需要調整其兩 者之間距離，控制反應條件生長預定高度之奈米碳管陣列15。 其次，向奈米碳管陣列15中填充陶瓷基體i6。 參閱第三圖’從基底12之複數注入孔14向兩基底之間添入陶瓷基體 16，即陶瓷粉體與聯結劑之混合物，該陶瓷粉體包括SiC、办〇、2^等。 該填充方式不限於此，如可將基底11與基底12浸入陶瓷粉體與聯結劑之混 合物中’或直接將奈米碳管陣列b與陶瓷粉體及聯結劑混合，只要使陶瓷 粉體與聯結劑之混合物均勻分散於奈米碳管陣列15之間便可。 進行熱壓處理，形成陶瓷單元2〇。 該熱壓處理一般於熱壓機中進行，其目的係使陶瓷基體16與奈米碳管 陣列15」訪步固結形成陶瓷單元2〇。 - 待基底11與基底12之空間已被陶瓷基體16填滿後，將載有基底11與 基底12之載具放入熱壓機内，將溫度控制於5〇(K7(xrc範圍内，壓力控制 於lOtlO^/m2範圍内進行熱壓處理，其最好於gQot之溫度、 之虔力下’沿奈米碳管軸向或徑向熱壓處理陶瓷粉體與奈米碳管陣列約 7 1326279 小時。移除基底11與基底12，得一陶究早元20 ’如第四圖所示。該陶 瓷單元20於水平方向上具有優異之絕熱性能，於垂直方向上具有絕好之導 熱性能。 最後，形成陶瓷塊材30。 上述製得之陶瓷單元20厚度較小，實際生活或生產所需之陶瓷產品， 如絕熱之耐火磚或高導熱之陶瓷材料，需將複數個陶瓷單元如於一定條件 下結合而成，如第五圖所示。具體結合時要將各陶瓷單元2〇沿導熱方向或 乡巴熱方向堆積起來，其每一陶瓷單元2〇之導熱方向或絕熱方向均一致；控 制溫度為8(XM800°C ’最料K)0〇m，壓力為1Q4〜她〆，熱壓燒Referring to the first figure, a substrate u and a substrate 12 are arranged in parallel. The substrate 12 is located above the substrate 11, and the two substrates are fixed as upper and lower layers by a carrier (not shown), and the distance between them can be ^ Intentional adjustment. A catalyst layer 13 is uniformly deposited on the substrate 11, and the material thereof may be iron, ruthenium and its alloy, etc., and the deposition method may be performed by thermal deposition, electron beam deposition or sputtering. The substrate 12 is provided with a plurality of injection holes 14 and the two substrates may be made of glass, quartz, quartz or oxidized. M oxidizes the catalyst layer 13 on the substrate 11 to form catalyst particles (not shown), and places the substrate carrying the substrate 11 and the substrate 12 in a reaction furnace (not shown), at 7QQ~ The carbon source gas is grown into a carbon nanotube array 15 as shown in the second figure, wherein the carbon source gas can be a gas such as a block or an acetonitrile, and the reaction time is controlled so that the carbon nanotubes are supported by the catalyst layer 13 of the substrate 11. After the growth is continued until the contact substrate 12' is cooled, the carrier is taken out. The growth method of the carbon nanotube array 15 is relatively mature, and can be found in the literature 5 (^1^1999, 283312414 and the literature Mm. Chem. Soc, 2001, 123, 11502-11503 'in addition, US Patent No. 6, 35 〇, No. 488 also discloses a method for growing a large-area carbon nanotube array. Since the distance between the substrate 11 and the substrate 12 can be arbitrarily adjusted, the distance between the two can be adjusted as needed to control the growth of the reaction conditions. The height of the carbon nanotube array 15. Next, the ceramic substrate i6 is filled into the carbon nanotube array 15. Referring to the third figure 'the ceramic substrate 16 is added between the two substrates from the plurality of injection holes 14 of the substrate 12, that is, ceramic a mixture of a powder and a coupling agent, the ceramic powder comprising SiC, ruthenium, ruthenium, etc. The filling manner is not limited thereto, such as immersing the substrate 11 and the substrate 12 in a mixture of the ceramic powder and the coupling agent' or directly The carbon nanotube array b is mixed with the ceramic powder and the coupling agent, and the mixture of the ceramic powder and the coupling agent can be uniformly dispersed between the carbon nanotube arrays 15. The hot pressing treatment is performed to form the ceramic unit 2 The hot pressing process is generally The purpose of the hot press is to allow the ceramic substrate 16 and the carbon nanotube array 15 to be stepped and consolidated to form the ceramic unit 2 - after the space between the substrate 11 and the substrate 12 has been filled by the ceramic substrate 16, The carrier carrying the substrate 11 and the substrate 12 is placed in a hot press, and the temperature is controlled at 5 〇 (K7 (xrc range, pressure controlled in the range of 10 O 2 / m 2 for hot pressing treatment, which is preferably at the temperature of gQot) Under the force of the force, the ceramic powder and the carbon nanotube array are treated along the axial or radial hot pressing of the carbon nanotubes for about 7 1326279 hours. The substrate 11 and the substrate 12 are removed, and a ceramic 20 is obtained. As shown in the fourth figure, the ceramic unit 20 has excellent heat insulating properties in the horizontal direction and excellent thermal conductivity in the vertical direction. Finally, the ceramic block 30 is formed. The ceramic unit 20 obtained above has a small thickness. Ceramic products required for actual living or production, such as insulating refractory bricks or high thermal conductivity ceramic materials, need to combine a plurality of ceramic units under certain conditions, as shown in the fifth figure. Ceramic unit 2 〇 along the heat conduction direction or the hot square Piled up direction or thermally insulating 2〇 direction of each ceramic unit which are consistent; 8 0〇m controlled temperature (XM800 ° C 'most material K), a pressure of 1Q4~ her 〆, hot burning
結-小時甚至數十小時，製成陶宪塊材3〇 ,如第六圖所示，具體使時間根& 要製造之陶瓷材料選定。 參閱第六圖’本實施例製造之陶瓷材料為一陶瓷塊材3〇，其包括一陶曼 ?體I6，即喊繼與聯結劑之混合物’該喊粉體包括sic、&。、叫 等；複數奈米碳管陣列15分佈於該陶瓷基體中。 細瓷塊材30 ’奈米碳管陣列15綱瓷與聯結歡混合物固㈣ 成-體’絲碳管陣列15 _備钟垂直、均勻分佈，形成複數妖& 通道’所形狀喊雜3G _直方向上，即絲碳管之軸向上具有、 熱性能’且導熱均自；同時’於水平方向上，即奈米碳管之徑向上又具In the hour-hour or even tens of hours, the Taoxian block is made 3 〇, as shown in the sixth figure, specifically the time root & ceramic material to be manufactured. Referring to the sixth drawing, the ceramic material produced in the present embodiment is a ceramic block 3, which comprises a ceramic body I6, that is, a mixture of a shunting agent and a coupling agent. The shouting powder includes sic, & , called, etc.; the plurality of carbon nanotube arrays 15 are distributed in the ceramic matrix. Fine porcelain block 30 'Nano carbon tube array 15 class porcelain and joints Huan mixture solid (four) into a body 'wire carbon tube array 15 _ reserve clock vertical, evenly distributed, forming a complex demon & channel 'the shape of shouting 3G _ In the straight direction, that is, the axial direction of the carbon nanotube has thermal properties and thermal conductivity is self-contained; at the same time, in the horizontal direction, that is, the radial direction of the carbon nanotubes
^熱無紐能，為-多功能陶紐料ρ 造陶聽材為例，綱該具有錄之熱傳性質之陶動 ，製。對於實際生產或生財所需要之確彡狀、結構之陶以 :曼::將基底U與基底12換成預設之模具，便可得到所需形狀、结跑 冊干分佈有複數相互 道’具有《導紐能；同時奈碳雜向上_紐够 ^1 能。故’該陶兗材料同時具有導熱與隔熱性能 __邑 總上所述’鋼細槪咖靖，繼提 以上所述者僅為本發明之較佳實施方式，自不能依此限制本發明之申； 8 丄326279 範圍，舉凡熟悉本發明技藝之人士援依本發明之精神所作之等效修飾或變 化，皆應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 第一圖係本發明之實施例設置兩基底並於其中一基底上形成催化 之示意圖。 丹曰 第二圖係本發明之實施例所製備之奈米碳管陣列示意圖。 第三圖係本發明之實施例填充陶瓷基體示意圖。 第四圖係本發明之實施例所製備之陶瓷單元示意圖。^There is no heat, and it is an example of the multi-functional pottery material ρ, which is made of ceramics. For the actual production or production of wealth, the shape of the structure, the structure of the pottery: Man:: the base U and the base 12 replaced with a preset mold, you can get the desired shape, the knot run dry distribution has multiple cross- It has the ability to guide the button; at the same time, the carbon is upwards. Therefore, the ceramic material has both thermal conductivity and thermal insulation properties. _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The equivalent modifications or variations made by persons skilled in the art to the spirit of the present invention are intended to be included in the scope of the following claims. BRIEF DESCRIPTION OF THE DRAWINGS The first figure is a schematic view of an embodiment of the present invention in which two substrates are disposed and a catalyst is formed on one of the substrates. The second diagram is a schematic diagram of a carbon nanotube array prepared in the examples of the present invention. The third figure is a schematic view of a ceramic-filled substrate of an embodiment of the present invention. The fourth drawing is a schematic view of a ceramic unit prepared in accordance with an embodiment of the present invention.
第五圖係本發明之實施例複數陶瓷單元沿導熱方向堆疊示意圖。 第六圖係本發明之實施例所形成之陶瓷塊材示意圖。 【主要元件符號說明】 〜 11，12 催化劑層 13 14 奈米碳管陣列 15 16 陶瓷單元 20 30 基底 複數注入孔 陶瓷基體 陶瓷塊材The fifth figure is a schematic diagram of stacking of a plurality of ceramic units in a heat conduction direction according to an embodiment of the present invention. Figure 6 is a schematic illustration of a ceramic block formed in accordance with an embodiment of the present invention. [Main component symbol description] ~ 11,12 Catalyst layer 13 14 Carbon nanotube array 15 16 Ceramic unit 20 30 Substrate Complex injection hole Ceramic substrate Ceramic block