TWI320605B - A photo electric diodes array and the manufacturing method of the same and a radiation ray detector - Google Patents
A photo electric diodes array and the manufacturing method of the same and a radiation ray detectorInfo
- Publication number
- TWI320605B TWI320605B TW093108053A TW93108053A TWI320605B TW I320605 B TWI320605 B TW I320605B TW 093108053 A TW093108053 A TW 093108053A TW 93108053 A TW93108053 A TW 93108053A TW I320605 B TWI320605 B TW I320605B
- Authority
- TW
- Taiwan
- Prior art keywords
- manufacturing
- same
- ray detector
- radiation ray
- photo electric
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000005855 radiation Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20183—Arrangements for preventing or correcting crosstalk, e.g. optical or electrical arrangements for correcting crosstalk
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20185—Coupling means between the photodiode and the scintillator, e.g. optical couplings using adhesives with wavelength-shifting fibres
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20188—Auxiliary details, e.g. casings or cooling
- G01T1/20189—Damping or insulation against damage, e.g. caused by heat or pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- High Energy & Nuclear Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003087764A JP4220817B2 (ja) | 2003-03-27 | 2003-03-27 | ホトダイオードアレイおよびその製造方法並びに放射線検出器 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200505040A TW200505040A (en) | 2005-02-01 |
TWI320605B true TWI320605B (en) | 2010-02-11 |
Family
ID=33095104
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093108053A TWI320605B (en) | 2003-03-27 | 2004-03-25 | A photo electric diodes array and the manufacturing method of the same and a radiation ray detector |
Country Status (9)
Country | Link |
---|---|
US (1) | US7408238B2 (zh) |
EP (1) | EP1608021B1 (zh) |
JP (1) | JP4220817B2 (zh) |
KR (1) | KR101152514B1 (zh) |
CN (1) | CN100466273C (zh) |
DE (1) | DE602004029144D1 (zh) |
IL (1) | IL171134A (zh) |
TW (1) | TWI320605B (zh) |
WO (1) | WO2004086506A1 (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4220818B2 (ja) * | 2003-03-27 | 2009-02-04 | 浜松ホトニクス株式会社 | ホトダイオードアレイおよびその製造方法並びに放射線検出器 |
KR100738653B1 (ko) * | 2005-09-02 | 2007-07-11 | 한국과학기술원 | 이미지 센서 모듈용 웨이퍼 레벨 칩 사이즈 패키지 및 이의제조방법 |
US7576371B1 (en) | 2006-03-03 | 2009-08-18 | Array Optronix, Inc. | Structures and methods to improve the crosstalk between adjacent pixels of back-illuminated photodiode arrays |
JP4644696B2 (ja) * | 2007-05-30 | 2011-03-02 | 富士フイルム株式会社 | 裏面照射型撮像素子及びその製造方法 |
US20100108893A1 (en) * | 2008-11-04 | 2010-05-06 | Array Optronix, Inc. | Devices and Methods for Ultra Thin Photodiode Arrays on Bonded Supports |
JP6091124B2 (ja) * | 2012-09-21 | 2017-03-08 | 株式会社半導体エネルギー研究所 | 画像撮像装置 |
WO2014179757A2 (en) * | 2013-05-03 | 2014-11-06 | Xrsciences Llc | Alternative fuels analyzer |
US9526468B2 (en) | 2014-09-09 | 2016-12-27 | General Electric Company | Multiple frame acquisition for exposure control in X-ray medical imagers |
CN111029417A (zh) * | 2019-12-02 | 2020-04-17 | 上海集成电路研发中心有限公司 | 一种光电探测器及其制备方法 |
WO2021257590A1 (en) * | 2020-06-17 | 2021-12-23 | Lumiode, Inc. | Optoelectronic device integrated with multilayer thin-film circuitry |
CN113433579B (zh) * | 2021-05-18 | 2023-01-20 | 中国工程物理研究院激光聚变研究中心 | 一种大灵敏面x射线光谱平响应二极管探测器 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1203089B (it) * | 1976-03-03 | 1989-02-15 | Int Plasma Corp | Procedimento ed apparecchiatura per eseguire reazioni chimiche nella regione della scarica luminescente di un plasma |
JPS5742175A (en) * | 1980-08-26 | 1982-03-09 | Fujitsu Ltd | Infrared ray detector |
JP2995960B2 (ja) | 1991-10-25 | 1999-12-27 | 日本電気株式会社 | 赤外線ccd |
JPH07333348A (ja) | 1994-06-03 | 1995-12-22 | Toshiba Corp | 放射線検出器およびこれを用いたx線ct装置 |
JPH08250488A (ja) * | 1995-01-13 | 1996-09-27 | Seiko Epson Corp | プラズマ処理装置及びその方法 |
JPH09181243A (ja) | 1995-12-25 | 1997-07-11 | Ricoh Co Ltd | リードフレーム |
JP3678526B2 (ja) * | 1997-02-10 | 2005-08-03 | 浜松ホトニクス株式会社 | 半導体装置 |
JP3586128B2 (ja) * | 1998-02-13 | 2004-11-10 | キヤノン株式会社 | 光電変換素子及びイメージセンサ |
AU2001244586A1 (en) * | 2000-04-04 | 2001-10-15 | Hamamatsu Photonics K.K. | Semiconductor energy detector |
JP2003086827A (ja) | 2001-09-12 | 2003-03-20 | Hamamatsu Photonics Kk | ホトダイオードアレイ、固体撮像装置、及び、放射線検出器 |
JP4482253B2 (ja) * | 2001-09-12 | 2010-06-16 | 浜松ホトニクス株式会社 | ホトダイオードアレイ、固体撮像装置、及び、放射線検出器 |
AU2003254876A1 (en) * | 2002-08-09 | 2004-03-11 | Hamamatsu Photonics K.K. | Photodiode array, production method therefor, and radiation detector |
-
2003
- 2003-03-27 JP JP2003087764A patent/JP4220817B2/ja not_active Expired - Fee Related
-
2004
- 2004-03-25 KR KR1020057018243A patent/KR101152514B1/ko not_active IP Right Cessation
- 2004-03-25 EP EP04723374A patent/EP1608021B1/en not_active Expired - Fee Related
- 2004-03-25 CN CNB2004800084463A patent/CN100466273C/zh not_active Expired - Fee Related
- 2004-03-25 DE DE602004029144T patent/DE602004029144D1/de not_active Expired - Lifetime
- 2004-03-25 WO PCT/JP2004/004215 patent/WO2004086506A1/ja active Application Filing
- 2004-03-25 US US10/550,688 patent/US7408238B2/en not_active Expired - Fee Related
- 2004-03-25 TW TW093108053A patent/TWI320605B/zh not_active IP Right Cessation
-
2005
- 2005-09-27 IL IL171134A patent/IL171134A/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN100466273C (zh) | 2009-03-04 |
KR101152514B1 (ko) | 2012-06-01 |
KR20050116157A (ko) | 2005-12-09 |
JP4220817B2 (ja) | 2009-02-04 |
JP2004296825A (ja) | 2004-10-21 |
EP1608021A4 (en) | 2007-05-02 |
US7408238B2 (en) | 2008-08-05 |
CN1768428A (zh) | 2006-05-03 |
US20070029591A1 (en) | 2007-02-08 |
IL171134A (en) | 2010-12-30 |
EP1608021A1 (en) | 2005-12-21 |
WO2004086506A1 (ja) | 2004-10-07 |
TW200505040A (en) | 2005-02-01 |
DE602004029144D1 (de) | 2010-10-28 |
EP1608021B1 (en) | 2010-09-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |