13090¾ 4twf.doc/〇〇6 13090¾ 4twf.doc/〇〇6130903⁄4 4twf.doc/〇〇6 130903⁄4 4twf.doc/〇〇6
九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種燈源及其製造方法，且特別是有 關方；種具有尚亮度的平面燈源及其製造方法。 【先前技術】 近年來’液晶顯示器（Liquid Crystal Display, IXD)漸 漸取代陰極射線管（Cathode Ray Tube，CRT)顯示器而成 為市場主流。然而，液晶顯示面板本身不具有發光的功能， 故在液晶顯示面板下方必須藉由一背光模組(Back light module)來提供光源，進而達到顯示畫面的功能。由於背光 模組中所提供至液晶面板中的光源是面絲，目此若能直 接使用發出高亮度的平面燈源(planar Ught s〇m.ce)來提供 面^源至液晶顯示面板中，射以增加液晶顯示器之頻示 圖1是習知-種平面燈源的局部 平面燈源.100包括上基板110、下義 U月 > 考圖1 ’ ._ „ 丞叛丨2〇、電極斜m "黾層140、螢光層150、阻隔壁j6〇。 在下基板Π0上，介電層M0貝,對130係配置 光層150配置於電㈣13Q之間二电極對130。螢 基板m的表面上。阻隔壁ij二;反11㈣ 120之間隔出多個放電空間17Q，而11(3 14下基板 填有放電氣體180。 ％些放電空間Π0内則 平面燈源1⑽的發光原理是利用電極對13〇之間所形 5 130905灸 4twf.doc/006 成的南電壓差來產生南能電子’並經由南能電子撞擊放電 氣體180而形成所謂之電漿。之後，電漿中被激發的激態 原子在回到基態的同時會發出紫外線，而其所射出之紫外 線會進一步激發平面燈源100中的螢光層150(phosphor layer)，以發出可見光。 就目前的平面燈源而言，如何增加其發光亮度是積極 研發的重點之一。而且，上述產生高電壓差的方法是藉由 電極對130透過覆蓋於其上的介電層140來累積電荷，進 而激發放電氣體180產生電漿。由此可知，介電層140的 形狀會對電漿產生量以及紫外光的產生效率造成影響，進 而影響平面燈源的發光亮度。 【發明内容】 有鑑於此，本發明之一目的是提供一種平面燈源，其 介電層的形狀可使此平面燈源具有高亮度。 本發明之另一目的是提供一種平面燈源的製造方 法，以製造出高亮度的平面燈源。 為達上述或是其他目的，本發明提出一種平面燈源， 其包括第一基板、第二基板、框膠、數條第一電極、數組 第一介電圖案、螢光層以及放電氣體。第二基板位於第一 基板上方，且框膠設置於第一基板與第二基板之間，而在 第一基板、第二基板與框膠之間形成一個腔室。這些第一 電極配置於第一基板上，這些第一介電圖案配置於第一基 板上，其中每一組第一介電圖案至少包括兩條第一條狀介 1309051¾64^ f.doc/006 電圖案，且每一第一條狀介電圖案係覆蓋住一條第一電 極，而每一第一條狀介電圖案之頂部側緣呈尖端狀。此外， 螢光層配置於同組之第一條狀介電圖案間，而放電氣體則 位於此腔室内。 在本發明之第一實施例中，上述之平面燈源更包括多 數個間隔物，且設置於第一基板與第二基板之間的腔室内。 在本發明之第一實施例中，上述之螢光層更包括塗佈 於這些間隔物之表面上。 • 在本發明之一實施例中，上述之另一螢光層配置於第 二基板上而與第一基板上的第一電極相對。 在本發明之一實施例中，上述之平面燈源更包括一反 ' 射層，配置於第一基板上，而這些第一電極係位於反射層 • 上。 在本發明之一實施例中，上述第一條狀介電層圖案的 頂部側緣高度例如是介於3微米至30微米之間。 在本發明之第一實施例中，上述之放電氣體是選自於 φ 氙氣、氖.氣、氬氣、氦氣、氘氣及其組合其中之一。 在本發明之一實施例中，上述之平面燈源更包括數條 第二電極，其配置於第二基板上而與那些第一電極相對， 且各第二電極係對應於一放電空間。 在本發明之一實施例中，上述之平面燈源更包括數條 第二條狀介電圖案，其配置於第二基板上而覆蓋住這些第 二電極。 在本發明之一實施例中，上述之各第二條狀介電圖案 13090¾ 4twf.doc/006 之頂部側緣例如是呈現尖端狀，而此頂部側緣的高度例如 是介於3微米至30微米之間。 本發明提出一種平面燈源的製作方法。首先，提供第 一基板’並且在苐一基板上形成多條第一電極，其中這些 第一電極大致上相互平行。接著，於第一基板上形成多數 組第一介電圖案，其中每一組第一介電圖案包括至少兩條 第一條狀介電圖案，且各第一條狀介電圖案覆蓋住一條第 一電極。在此，每一條第一條狀介電圖案之頂部側緣呈尖 端狀。繼之，在同組之第一條狀介電圖案間形成螢光層。 接著，提供一第二基板，再結合第一基板與第二基板，並 同時於這些放電空間填入放電氣體。 在本發明之第一實施例中，上述形成第一條狀介電圖 案的方法例如是先於第一基板上形成一介電材料層來覆蓋 第一電極，其中此介電材料層包括溶劑、黏結劑與介電陶 瓷粉體。接著，將此介電材料層加熱至第一溫度，並在第 一期間（duration)内持續以第一溫度對介電材料層進行加 熱。然後將介電材料層加熱至弟二溫度5並在弟二期間 (duration)内持續以第二溫度對介電材料層進行加熱。繼 之，將介電材料層加熱至第三溫度，並在第三期間（duration) 内持續以第三溫度對介電材料層進行加熱。 在本發明之第一實施例中，上述之第三溫度高於第二 溫度’且弟—溫度尚於弟溫度。 在本發明之第一實施例中，上述之第一溫度為攝氏 150度，且第一期間為10分鐘。 8 130905¾ 4twf.doc/006 在本發明之第一實施例中，上述之第二溫度為攝氏 400度，且第二期間為20分鐘。 在本發明之第一實施例中，上述之第三溫度為攝氏 540度，且第三期間為20分鐘。 在本發明之第一實施例中，上述形成第一條狀介電圖 案的方法包括钱刻製程或是喷砂製程。 在本發明之第一實施例中，上述平面燈源的製作方法 於結合第二基板與第一基板之前，還可以先在第一基板與 第二基板之間形成多個間隙物。 在本發明之第一實施例中，上述平面燈源的製作方法 於形成上述第一電極之前，更可以先在第一基板上形成一 反射層，之後再將這些第一電極形成於此反射層上。 在本發明之第一實施例中，上述平面燈源的製作方法 更包括在結合第二基板與第一基板之前，先於第二基板上 形成另一螢光層。 本發明係將平面燈源的介電層頂部設計為尖端狀，因 此在施加電壓於電極對時，此介電層的尖端上會累積有較 習知多的電荷量，因而產生尖端放電的現象，以增加放電 氣體所產生的電漿量及電漿所激發出的紫外光。如此一 來，螢光層即可因吸收到較多之紫外光而發出高亮度的可 見光，進而提昇平面燈源的發光亮度。 為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 9 13090S3·4 twfd〇c/〇°6 【實施方式】 第一實施例 圖2A至圖2D是本發明第一實施例之—種平面燈源 的製作流程圖。請參考圖2A，首先’提供第—基板21如， 並且在第一基板210a上形成多條大致上相互平行的_ — 4極230。值得一提的是，為了提高此平面燈源的光利用 率，本實施例例如是在形成第一電極230之前，先在第— 基板210a上形成反射層290，之後再將第—電極23〇 = 於反射層290上。當然，在其他實施例中，反射層（未緣 亦可以配置於第一基板210a未配置有第—電極23〇的^ 面，本發明並未對此加以限定。 义 -介基板_上形成多組第 木240,其中母一組弟一介電圖案24〇至 兩條第一條狀介電圖案240a，且每一第—仪此人 24〇a係覆蓋住一條第一電極23〇。特別的θj圖案 240a 244 K ^ 當施加電壓於第一電極23〇時，第一 /此采 ::頂部側細處與第-條狀介電圖; 口 Η立相較之下，可累積軔容的帝曰 ”他 現象。 何I ’以造成尖端放電的 以下將舉實施例說明形成上述 24〇a的方法，伯甘、，此^ ^弟條狀介電圖案 在第—基板上定本發明。圖3為本實施例 土形成"电材料層後的放大示意圖。圖4則為 10 I3090S3 4twf.doc/006 形成第一條狀介電圖案240a之時間溫度關係曲線圖。 請共同參考圖3與圖4,本實施例形成第一條狀介電 圖案240a的方法是先在第一基板2i〇a上形成一層介電材 料層246覆盍住第一電極230。其中，介電材料層246通 常是由溶劑 '黏結劑與介電陶瓷粉體所構成。接著，將介 電材料層246加熱至溫度τι，並在ti期間内持續以溫度 丁1對介電材料層246加熱，以蒸發出介電材料層246内的 溶劑。在此’溫度T1例如是攝氏150度，而tl期間例如 是10分鐘。 然後’將介電層材料層246由溫度ΊΊ加熱至溫度T2, 並在t2期間内持續以溫度T2對介電材料層246加熱，以 蒸發出介電材料層246内的黏結劑。在此，溫度T2例如 是攝氏400度，而t2期間例如是20分鐘。之後，再繼續 對介電層材料層246從溫度T2加熱至溫度T3，並在t3期 間内持續以溫度T3對介電材料層246加熱，以燒結介電 材料層246内的介電陶瓷粉體，最後再將介電材料層246 冷卻至常溫。在此，溫度T3例如是攝氏540度，而t:3期 間例如是20分鐘。 在完成上述加熱步驟之後，所形成之第一條狀介電圖 案240a即如圖2B所示，也就是其頂部側緣244係呈現尖 端狀。 當然，熟習此技藝者應該知道，除了以上述方法製造 圖2B之第一條狀介電圖案240a外，在本發明的其他實施 例中，還可以利用其他方式來製作第一條狀介電圖案 I30905364twfd〇c/_ 240a，例如是蝕刻製程或是噴砂製程等。 “考圖2C ’在形成這些第-條狀介電圖宰240a之 後;接著例如是先在各組第一介電層圖案24〇之二^ 間Γ、物222 ’以分院出數個放電空間28〇。繼之，於這些放 = 狀介電圖案2術之間形成螢;層 妝八带“疋、光層250可以是同時覆蓋住第-條 片” ％圖杀240a與這些間隙物222的側壁。 接著’請參考圖2D，提供第二基板21% ==基板⑽結合於第-基板21。」並同 26Q 土反^1〇a與第—基板210b之間填人放電氣體 ，卩大致完成平面燈源·的製作過程。 氧體260可以馮自於气$ …—尸 T a %人苴中少—ri 坑氣、氬氣、氦氣、氣氣及其 、口二中之—或者是其他放電氣體等。此外，本實施例之 基板21%上例如是已形成有-螢光層252。 繼心=上，施例所形成之平面燈源稍作說明。請 源2GG包括第—基板2心、第二 Ϊ板21 %、_ 220、多條第一電極230、多組第一介電 圖案240、螢光層250以及放電氣體260。其中，第二基板 〜^配置於第：基板21〇a之上方。膠框⑽係配置於第 j 210a與第二基板之間，使得第一基板廳、 —―二板21%以及勝框220之間形成-個腔室270。數條 ，私才上2巧與數組第一介電圖t 240均配置於第一基板 ^上:且第一基板鳩上亦可以配置有一反射層29〇， 4-电極230與第一介電圖案24〇則係配置於反射層 12 I309053uwf.doc/O06 290 上。 特別的是，每一組第一介電圖案240至少包括兩條第 一條狀介電圖案240a，且每一第一條狀介電圖案240a係 覆蓋住一條第一電極230。特別的是，每一條第一條狀介 電圖案240a的頂部側緣244係呈現尖端狀，因此在平面燈 源200的放電過程中，第一條狀介電圖案240a之頂部側緣 244可累積有多餘其他部位的電荷量，進而產生尖端放電 的現象。 • 以下將舉例說明本發明之第一條狀介電圖案的尺 寸，但其並非用以限定本發明。圖5為圖2D之第一條狀 介電圖案240a的放大示意圖。請參考圖5，第一條狀介電 ' 圖案240a之寬度為L1，高度為H1。第一條狀介電圖案240a • 的尖端狀之頂部侧緣244的高度為H2,而同一第一條狀介 電圖案240a之兩尖端狀頂部侧緣244間的距離為L2。在 本實施例中，第一條狀介電圖案240a之寬度L1約為1釐 米至5釐米，高度H1約為50微米至400微米。兩尖端狀 • 頂部側緣244間的距離L2則約為1釐米至4釐米，且高 度可以是介於3微米至30微米。 請再次參照圖2D，螢光層250係配置於各放電空間 280内的這些第一條狀介電圖案240a之間。當然，第二基 板210b上也可以配置另一層螢光層252。放電氣體260則 是填於腔室270的各放電空間280内，且其例如是選自於 氣氣、氖氣、氬氣、氦氣、氛氣及其組合其中之一或者是 其他放電氣體等。此外，第一基板210a與第二基板210b 13 »4t\vf.doc/006 之間更可以配置有間隙物222 第—基板210 b之間的間距。 用以維持第一基板210a與 由上述可知，本發明之第一條狀介電圖# 240a之頂 ^則緣244係呈現災端狀’因此可誘發尖端放電而增加放 兒過程情產生的《量，以便於增多電漿所激發出的紫 外光，進而提高營光層250戶斤發出之可見光亮度。如此一 來，即可有效地提昇平面燈源200的發光亮度。IX. Description of the Invention: [Technical Field] The present invention relates to a lamp source and a method of manufacturing the same, and in particular to a related party; a planar lamp source having a brightness and a method of manufacturing the same. [Prior Art] In recent years, Liquid Crystal Display (IXD) has gradually replaced the cathode ray tube (CRT) display. However, the liquid crystal display panel itself does not have the function of emitting light. Therefore, a light source must be provided under the liquid crystal display panel by a backlight module to achieve the function of displaying the screen. Since the light source provided in the liquid crystal panel in the backlight module is a surface wire, if the planar light source (planar Ught s〇m.ce) emitting high brightness can be directly used to provide the surface source to the liquid crystal display panel, FIG. 1 is a partial planar light source of a conventional planar light source. 100 includes an upper substrate 110, a lower U-month, a test image 1 '. _ 丞 丞 丨 2 〇, an electrode The slanting m " 黾 layer 140, the phosphor layer 150, and the barrier layer j6 〇. On the lower substrate Π0, the dielectric layer M0, the 130-series optical layer 150 is disposed between the electric (four) 13Q two electrode pairs 130. On the surface of m, the barrier wall ij is two; the reverse 11 (four) 120 is spaced apart from the plurality of discharge spaces 17Q, and 11 (the lower substrate is filled with the discharge gas 180. The discharge principle of the planar light source 1 (10) is in the discharge space Π0 The south voltage difference is generated by the electrode pair of 13 130905 moxibustion 4twf.doc/006 to form the Nanneng electron 'and the southerly electrons strike the discharge gas 180 to form a so-called plasma. After that, the plasma is Excited excited atoms emit ultraviolet light while returning to the ground state, and the ultraviolet rays emitted by them The line further excites the phosphor layer 150 in the planar light source 100 to emit visible light. As far as the current planar light source is concerned, how to increase the brightness of the light is one of the focuses of active research and development. The voltage difference is obtained by accumulating charges by the electrode layer 130 passing through the dielectric layer 140 overlying the electrode layer 130, thereby exciting the discharge gas 180 to generate plasma. It can be seen that the shape of the dielectric layer 140 affects the amount of plasma generated and In view of the above, it is an object of the present invention to provide a planar light source having a dielectric layer shape that allows the planar light source to have High Brightness Another object of the present invention is to provide a method of fabricating a planar light source to produce a high brightness planar light source. To achieve the above or other objects, the present invention provides a planar light source comprising a first substrate a second substrate, a sealant, a plurality of first electrodes, an array of first dielectric patterns, a phosphor layer, and a discharge gas. The second substrate is located above the first substrate, and the sealant is The first substrate and the second substrate are disposed between the first substrate and the second substrate, and a chamber is formed between the first substrate and the second substrate. The first electrodes are disposed on the first substrate, and the first dielectric patterns are disposed on the first substrate. On the first substrate, each set of first dielectric patterns includes at least two first strip-shaped dielectric layers 13090513⁄464^f.doc/006, and each first strip-shaped dielectric pattern covers a first electrode And the top side edge of each of the first strip-shaped dielectric patterns has a tip shape. Further, the phosphor layer is disposed between the first strip-shaped dielectric patterns of the same group, and the discharge gas is located in the chamber. In a first embodiment, the planar light source further includes a plurality of spacers disposed in the chamber between the first substrate and the second substrate. In a first embodiment of the invention, the phosphor layer described above further comprises a surface coated on the spacers. In an embodiment of the invention, the other phosphor layer is disposed on the second substrate opposite to the first electrode on the first substrate. In an embodiment of the invention, the planar light source further includes an anti-reflection layer disposed on the first substrate, and the first electrodes are disposed on the reflective layer. In an embodiment of the invention, the top side edge height of the first strip-shaped dielectric layer pattern is, for example, between 3 microns and 30 microns. In the first embodiment of the present invention, the discharge gas is one selected from the group consisting of φ helium, helium, argon, helium, neon, and combinations thereof. In an embodiment of the invention, the planar light source further includes a plurality of second electrodes disposed on the second substrate opposite to the first electrodes, and each of the second electrodes corresponds to a discharge space. In an embodiment of the invention, the planar light source further includes a plurality of second strip-shaped dielectric patterns disposed on the second substrate to cover the second electrodes. In an embodiment of the present invention, the top side edge of each of the second strip-shaped dielectric patterns 130902⁄4 4twf.doc/006 is, for example, a tip-like shape, and the height of the top side edge is, for example, between 3 micrometers and 30 degrees. Between microns. The invention provides a method for fabricating a planar light source. First, a first substrate ' is provided and a plurality of first electrodes are formed on a first substrate, wherein the first electrodes are substantially parallel to each other. And forming a plurality of arrays of first dielectric patterns on the first substrate, wherein each of the first dielectric patterns comprises at least two first strip-shaped dielectric patterns, and each of the first strips of dielectric patterns covers a first An electrode. Here, the top side edge of each of the first strip-shaped dielectric patterns has a pointed end shape. Subsequently, a phosphor layer is formed between the first strip of dielectric patterns of the same group. Next, a second substrate is provided, and the first substrate and the second substrate are combined, and at the same time, the discharge gas is filled in the discharge spaces. In the first embodiment of the present invention, the method for forming the first strip-shaped dielectric pattern is, for example, forming a dielectric material layer on the first substrate to cover the first electrode, wherein the dielectric material layer includes a solvent, Adhesive and dielectric ceramic powder. Next, the dielectric material layer is heated to a first temperature and the dielectric material layer is continuously heated at a first temperature during a first period. The layer of dielectric material is then heated to a second temperature of 5 and the layer of dielectric material is continuously heated at a second temperature during the duration of the second. The dielectric material layer is then heated to a third temperature and the dielectric material layer is continuously heated at a third temperature during a third period. In the first embodiment of the invention, the third temperature is higher than the second temperature and the temperature is still at the temperature. In a first embodiment of the invention, the first temperature is 150 degrees Celsius and the first period is 10 minutes. 8 1309053⁄4 4twf.doc/006 In a first embodiment of the invention, the second temperature is 400 degrees Celsius and the second period is 20 minutes. In a first embodiment of the invention, the third temperature is 540 degrees Celsius and the third period is 20 minutes. In a first embodiment of the invention, the method of forming the first strip dielectric pattern comprises a coin engraving process or a sandblasting process. In the first embodiment of the present invention, the planar light source is formed by forming a plurality of spacers between the first substrate and the second substrate before combining the second substrate and the first substrate. In the first embodiment of the present invention, before the forming the first electrode, a reflective layer may be formed on the first substrate, and then the first electrode is formed on the reflective layer. on. In a first embodiment of the present invention, the method for fabricating the planar light source further includes forming another phosphor layer on the second substrate before bonding the second substrate and the first substrate. In the present invention, the top of the dielectric layer of the planar light source is designed to be tip-shaped, so that when a voltage is applied to the electrode pair, a more conventional charge amount is accumulated on the tip end of the dielectric layer, thereby causing a tip discharge phenomenon. In order to increase the amount of plasma generated by the discharge gas and the ultraviolet light excited by the plasma. In this way, the phosphor layer can emit high-visibility visible light by absorbing a large amount of ultraviolet light, thereby improving the luminance of the planar light source. The above and other objects, features and advantages of the present invention will become more <RTIgt; 9 13090S3·4 twfd〇c/〇°6 [Embodiment] First Embodiment Fig. 2A to Fig. 2D are flowcharts showing the fabrication of a planar light source according to a first embodiment of the present invention. Referring to FIG. 2A, first, the first substrate 21 is provided, and a plurality of substantially parallel _ - 4 poles 230 are formed on the first substrate 210a. It is worth mentioning that, in order to improve the light utilization rate of the planar light source, in this embodiment, for example, before the first electrode 230 is formed, the reflective layer 290 is formed on the first substrate 210a, and then the first electrode 23 is turned on. = on the reflective layer 290. Of course, in other embodiments, the reflective layer may be disposed on the surface of the first substrate 210a where the first electrode is not disposed. The present invention is not limited thereto. The group of wood 240, wherein the mother set of a dielectric pattern 24 〇 to the two first strip-shaped dielectric patterns 240a, and each of the first 24 〇a covers a first electrode 23 〇. Θj pattern 240a 244 K ^ When a voltage is applied to the first electrode 23〇, the first/this mining:: the top side detail is compared with the first-strip dielectric diagram; The empire "he" phenomenon. He I's the following method which will cause the tip discharge to illustrate the formation of the above 24 〇a, Bergan, this ^ ^ strip dielectric pattern on the first substrate. 3 is an enlarged schematic view showing the formation of an electric material layer in the present embodiment. FIG. 4 is a graph showing the time temperature relationship of the first strip dielectric pattern 240a by 10 I3090S3 4twf.doc/006. Please refer to FIG. 3 together. 4, the method for forming the first strip-shaped dielectric pattern 240a in this embodiment is first on the first substrate 2i〇a A layer of dielectric material 246 is layered over the first electrode 230. The dielectric material layer 246 is typically composed of a solvent 'bonding agent and a dielectric ceramic powder. Next, the dielectric material layer 246 is heated to a temperature τι. And continuing to heat the dielectric material layer 246 at a temperature of ti to evaporate the solvent within the dielectric material layer 246. Here, the temperature T1 is, for example, 150 degrees Celsius, and the period of t1 is, for example, 10 minutes. The dielectric layer material layer 246 is then heated from temperature ΊΊ to temperature T2 and the dielectric material layer 246 is continuously heated at temperature T2 during t2 to evaporate the binder within the dielectric material layer 246. The temperature T2 is, for example, 400 degrees Celsius, and the period t2 is, for example, 20 minutes. Thereafter, the dielectric layer material layer 246 is further heated from the temperature T2 to the temperature T3, and the dielectric material layer 246 is continued at the temperature T3 during the period t3. Heating is performed to sinter the dielectric ceramic powder in the dielectric material layer 246, and finally the dielectric material layer 246 is cooled to a normal temperature. Here, the temperature T3 is, for example, 540 degrees Celsius, and the t:3 period is, for example, 20 minutes. After the completion of the above heating step, the formation The first strip-shaped dielectric pattern 240a is as shown in Fig. 2B, that is, the top side edge 244 thereof is in the shape of a tip. Of course, those skilled in the art should know that the first strip of Fig. 2B is manufactured by the above method. In addition to the electrical pattern 240a, in other embodiments of the present invention, the first strip-shaped dielectric pattern I30905364twfd〇c/_240a may be formed by other means, such as an etching process or a sandblasting process, etc. "Test 2C" After forming the first strip-shaped dielectric pattern 240a; then, for example, a plurality of discharge spaces 28 分 are distributed in the first dielectric layer pattern 24 of each group. Then, a firefly is formed between the two patterns of the dielectric pattern 2; the layer of the makeup layer "the light layer 250 may cover the first sheet at the same time" and the side walls of the spacers 222. Next, referring to FIG. 2D, a second substrate 21% == substrate (10) is bonded to the first substrate 21. And the discharge gas is filled between the 26Q soil anti-1〇a and the first substrate 210b, and the production process of the planar light source is substantially completed. Oxygen 260 can be arrogant from the gas ... ... corpse T a % 苴 — — ri 坑 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Further, for example, the phosphor layer 252 is formed on the substrate 21% of the present embodiment. According to the heart = above, the plane light source formed by the application is slightly explained. The source 2GG includes a first substrate 2, a second yoke 21%, _220, a plurality of first electrodes 230, a plurality of sets of first dielectric patterns 240, a phosphor layer 250, and a discharge gas 260. The second substrate is disposed above the first substrate 21A. The plastic frame (10) is disposed between the jth 210a and the second substrate such that a chamber 270 is formed between the first substrate chamber, the second plate 21%, and the win frame 220. a plurality of layers, a private interface and an array of the first dielectric patterns t 240 are disposed on the first substrate ^: and the first substrate can also be provided with a reflective layer 29, 4-electrode 230 and the first dielectric The electrical pattern 24〇 is disposed on the reflective layer 12 I309053uwf.doc/O06 290. In particular, each set of first dielectric patterns 240 includes at least two first dielectric patterns 240a, and each of the first strip dielectric patterns 240a covers a first electrode 230. In particular, the top side edge 244 of each of the first strip-shaped dielectric patterns 240a exhibits a tip shape, so that the top side edge 244 of the first strip-shaped dielectric pattern 240a can accumulate during discharge of the planar light source 200. There is a surplus of other parts of the charge, which in turn produces a phenomenon of tip discharge. • The dimensions of the first strip dielectric pattern of the present invention will be exemplified below, but are not intended to limit the present invention. Figure 5 is an enlarged schematic view of the first strip dielectric pattern 240a of Figure 2D. Referring to FIG. 5, the first strip dielectric 'pattern 240a has a width L1 and a height H1. The tip-shaped top side edge 244 of the first strip-shaped dielectric pattern 240a has a height H2, and the distance between the two tip-shaped top side edges 244 of the same first strip-shaped dielectric pattern 240a is L2. In the present embodiment, the first strip-shaped dielectric pattern 240a has a width L1 of about 1 cm to 5 cm and a height H1 of about 50 μm to 400 μm. Two Tips • The distance L2 between the top side edges 244 is about 1 cm to 4 cm and the height can be between 3 microns and 30 microns. Referring again to FIG. 2D, the phosphor layer 250 is disposed between the first strip-shaped dielectric patterns 240a in each of the discharge spaces 280. Of course, another layer of phosphor layer 252 can also be disposed on the second substrate 210b. The discharge gas 260 is filled in each discharge space 280 of the chamber 270, and is selected, for example, from one of gas, helium, argon, helium, atmosphere, and combinations thereof, or other discharge gas. . In addition, a spacing between the first substrate 210a and the second substrate 210b 13 »4t\vf.doc/006 may be further disposed between the spacers 222 and the first substrate 210 b. In order to maintain the first substrate 210a and the above, it can be seen that the top edge 244 of the first strip dielectric diagram #240a of the present invention exhibits a disaster-like shape, thereby inducing tip discharge and increasing the production process. The amount is so as to increase the ultraviolet light excited by the plasma, thereby increasing the brightness of visible light emitted by the camping layer of 250 kilograms. In this way, the luminance of the planar light source 200 can be effectively improved.
复二實施例 圖6是本發明第二實施例之一種平面燈源結構剖面 圖。請參考圖6，平面燈源300與上述實施例之平面燈源 2〇〇不同之處在於第二基板雇上亦形成有第二電極说 與第二介電圖案242。至於平面燈源3〇〇之第一基板21〇& 上的第一電極230、第一介電層圖案240、螢光層25〇、反 射層29G #製作流程及結構皆與上述之料方^相同或相 似’此處不再資述。Fig. 6 is a cross-sectional view showing the structure of a planar light source according to a second embodiment of the present invention. Referring to FIG. 6, the planar light source 300 is different from the planar light source 2 of the above embodiment in that the second substrate is also formed with a second electrode and a second dielectric pattern 242. As for the first substrate 230, the first dielectric layer pattern 240, the phosphor layer 25A, and the reflective layer 29G on the first substrate 21A& of the planar light source 3, the manufacturing process and the structure are the same as the above-mentioned materials. ^Identical or similar 'No longer quoted here.
^本實施例係在結合第一基板210a與第二基板2丨％之 剑，先於第二基板21 〇b上配置多條第二電極232，其中在 組立第一基板210a與第二基板21〇13後，各條第二電極232 係位於一放電空間280内。接著，在第二基板21〇b上形成 多條第二條狀介電圖案242，且每條第二條狀介電圖案242 係覆蓋住^條第二電極2 3 2。在此，第二條狀介電圖案2 4 2 的製作方法例如是與第一條狀介電圖案24〇a的製作方法 相同或相似。如此一來，即可使第二條狀介電圖案如之 14 13090$3屯 wf.doc/006 頂部側緣244呈現尖端狀。而後續配置在第二基板210b 上的螢光層252則係位於第二條狀介電圖案242的側壁上。 綜上所述，由於本發明之平面燈源中的條狀介電圖案 之頂部側緣為尖端狀，因此可誘發尖端放電，進而提昇平 面燈源的發光亮度。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此技藝者，在不脫離本發明之精神 和範圍内，當可作些許之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1是習知一種平面燈源的局部剖面圖。 圖2A至圖2D是本發明第一實施例之一種平面燈源 的製作流程剖面圖。 圖3為本發明第一實施例在第一基板上形成介電材料 層後的放大示意圖。 圖4為形成第一條狀介電圖案之時間溫度關係曲線 圖。 圖5為圖2D之第一條狀介電圖案的放大示意圖。 圖6是本發明第二實施例之一種平面燈源結構剖面 圖。 【主要元件符號說明】 100 :平面燈源 1309053 4twf.doc/006 1309053 4twf.doc/006 110 ： 120 ： 130 ： 140 ： 150 ： 160 ： 170 ： 200 ： • 210a 210b 220 . 222 230 232 240 240a 0 赢 242 244 246 250、 260 ： 270 ： 280 ： 300 ： 上基板 下基板 電極 介電層 榮光層 間隙物 放電空間 平面燈源 :第一基板 :第二基板 框膠 間隙物 第一電極 第二電極 第一介電圖案 :第一條狀介電圖案 第二條狀介電圖案 頂部側緣 介電材料層 252 :螢光層 放電氣體 腔室 放電空間 平面燈源 13090¾ 4twf. doc/006 LI :寬度 L2 :距離 I-Il、H2 :高度 ΤΊ、T2、T3 :溫度In this embodiment, a plurality of second electrodes 232 are disposed on the second substrate 21 〇b in combination with the first substrate 210a and the second substrate 2%, wherein the first substrate 210a and the second substrate 21 are assembled. After the crucible 13, the second electrodes 232 are located in a discharge space 280. Next, a plurality of second strip-shaped dielectric patterns 242 are formed on the second substrate 21〇b, and each of the second strip-shaped dielectric patterns 242 covers the second strips 2323. Here, the method of fabricating the second strip-shaped dielectric pattern 24 2 is, for example, the same as or similar to the method of fabricating the first strip-shaped dielectric pattern 24A. In this way, the second strip-shaped dielectric pattern, such as the 1413090$3屯 wf.doc/006 top side edge 244, can be tipped. The phosphor layer 252 disposed on the second substrate 210b is disposed on the sidewall of the second strip dielectric pattern 242. In summary, since the top side edge of the strip dielectric pattern in the planar light source of the present invention is tip-shaped, tip discharge can be induced, thereby improving the luminance of the flat light source. While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a partial cross-sectional view showing a conventional planar light source. 2A to 2D are cross-sectional views showing a manufacturing process of a planar light source according to a first embodiment of the present invention. Fig. 3 is an enlarged schematic view showing the formation of a dielectric material layer on the first substrate in the first embodiment of the present invention. Fig. 4 is a graph showing the time-temperature relationship of forming a first strip-shaped dielectric pattern. FIG. 5 is an enlarged schematic view of the first strip dielectric pattern of FIG. 2D. Figure 6 is a cross-sectional view showing the structure of a planar light source in accordance with a second embodiment of the present invention. [Description of main component symbols] 100: Planar light source 1309053 4twf.doc/006 1309053 4twf.doc/006 110 : 120 : 130 : 140 : 150 : 160 : 170 : 200 : • 210a 210b 220 . 222 230 232 240 240a 0 Win 242 244 246 250, 260 : 270 : 280 : 300 : Upper substrate lower substrate electrode dielectric layer glory layer spacer discharge space plane light source: first substrate: second substrate frame spacer spacer first electrode second electrode A dielectric pattern: first strip dielectric pattern second strip dielectric pattern top side edge dielectric material layer 252: phosphor layer discharge gas chamber discharge space plane light source 130902⁄4 4twf. doc/006 LI: width L2 : Distance I-Il, H2: Height ΤΊ, T2, T3: Temperature