TWI325284B - Field emission device and method for making same - Google Patents

Description

1325284 ，九、發明說明： 【發明所屬之技術領域j 本發明涉及一種顯示梦 bs ^ R He '+ 、置尤其涉及一種場發射 .喊不益及其製造方法。 .【先前技術】 近年來，各種顯示器私虽、* . ^展迅速’已被廣泛應用於個人 電腦、移動通sfl及消費性電子 σ ^ ^ ^ 十屋口口寻7員域，成爲貧訊技術 之一大平堂。目前應用較S並冶夕姑_。„ 丨+收 舄曰遍之顯不器主要有液晶顯示 态、電漿顯不器及場發射顯千哭笪 耵,，肩不态寺。其令，場發射顯示器 與其他顯示器相比，具有爭含料 虿更π對比度、更廣視角'更高亮 度、更低能耗、更短回庫日卑門丨v R s々 又間以及更寬工作溫度等優點， 可適合作照明光源、平板顯干哭芬6 一 伋4不态及至外用之全色大螢幕顯 禾幕以及各種廣告顯示面板等。 凊參閱圖1，目前之場私gg - 口。 卷射”·，員不裔一般包括一支撐基底 1、一形成於支撐基底丨内表面之陰極2、一透明美 一形成於該透明基板1上面對陰極2之表面之陽極土4、以及 i成於陽極4内表面之營光層6。該陰極2包括一陰極基 底7及形成於該陰極基底7上之複數發射單元&該勞光層 6具有複數螢光單元分別與複數發射單元8相對應，且所述 螢光發射單元8間隔一定距離。通常，在電場作用 了 ’電子從各個發射單元8發出，經過電場加速至陽極4。 該具有一定能量之電子通常能轟擊陽極4上對應之螢光單 二使：其中螢光粉之發光成分發出所需要之螢光。該種 場發射器件所用之營光粉一般爲高壓螢光粉，其發光效率 61325284, IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a display dream bs ^ R He '+ , and particularly relates to a field emission. [Prior Art] In recent years, various display monitors have been widely used in personal computers, mobile sfl and consumer electronics σ ^ ^ ^ Shiwukou to find the 7-member domain, becoming a poor news One of the technologies is Dapingtang. At present, the application is more than S. „ 丨+收舄曰的显器 is mainly composed of liquid crystal display state, plasma display device and field emission, and the shoulders are not crying. Competing for more π contrast, wider viewing angle 'higher brightness, lower energy consumption, shorter return to the library, 卑 丨 丨 v R s 々 and more wide operating temperature, etc., can be suitable for lighting source, flat display Dry Cry Fen 6 A 汲 4 4 and 4 to the external use of the full-color large screen display screen and various advertising display panels, etc. 凊 Refer to Figure 1, the current field of private gg - mouth. Volume "·, members of the African general generally include a a support substrate 1, a cathode 2 formed on the inner surface of the support substrate, a transparent anode 1 formed on the surface of the transparent substrate 1 opposite to the cathode 2, and a camping layer formed on the inner surface of the anode 4. 6. The cathode 2 includes a cathode substrate 7 and a plurality of emitting units formed on the cathode substrate 7. The working layer 6 has a plurality of fluorescent units respectively corresponding to the plurality of emitting units 8, and the fluorescent emitting units 8 are spaced apart. a certain distance. Usually, an electric field acts on the 'electrons emitted from the respective emission units 8, and is accelerated to the anode 4 through the electric field. The electrons with a certain energy can usually bombard the corresponding fluorescent single on the anode 4: wherein the luminescent component of the fluorescent powder emits the desired fluorescent light. The camping powder used in the field emission device is generally a high-pressure phosphor powder, and its luminous efficiency is 6

Claims (1)

1325284 、 88.12. 1δ · "—] 年月s修(更)正本 十'申請專利範圍： 1. 一種場發射顯示器，其包括： ' 一支撐基底； : 一陰極，形成於該支撐基底之表面，且該陰極包括至少一 發射體； 一透明基板，其係以面對所述支撐基底形成有陰極之表面 之方式設置，並與陰極間隔形成一真空空間； 一陽極’形成於所述透明基板面對陰極之表面上； 春 其改進在於，所述陰極之至少一發射體上面對陽極之表面 形成有一勞光層。 2.如申請專利範圍第1項所述之場發射顯示器，其中，所述支 撐基底爲一導電基底，所述至少一發射體形成於所述導電 基底上。 3·如申睛專利範圍第1項所述之場發射顯示器，其中，所述支 撐基底爲一絕緣基底，所述陰極進一步包括一導電基底形 成於所述絕緣基底上，所述至少一發射體形成於導電基底 面對陽極之表面上。 4.如申請專利範圍第2或3項所述之場發射顯示器，盆中，所 =絲爲-連續之整體層，其形成於所述至^發射體 面對陽極之表面上。 5·ΐ1請專利範圍第2或3項所述之場發射顯示器，其中，所 二光單^形成於相應 發射體面對％極之表面上。 6·如申請專利範圍第2或3項所述之場發射顯示器其中，所 17 二式或點陣式排佈之複數發射體 M Mfc圍第6項所述之場發射顯示 數發射體之間設有絕緣隔離層。 、i)ut二專利圍第2或3項所述之場發射顯示器，其中，所 二“，料選自奈米碳管、碳纖維、石墨碳、金剛石、 石反化矽或金屬。 J1325284, 88.12. 1δ · "-] Year s repair (more) original ten 'patent application scope: 1. A field emission display, comprising: 'a supporting substrate;: a cathode formed on the surface of the supporting substrate And the cathode comprises at least one emitter; a transparent substrate disposed in a manner facing the surface of the support substrate on which the cathode is formed, and spaced apart from the cathode to form a vacuum space; an anode formed on the transparent substrate Facing the surface of the cathode; the spring is improved in that at least one emitter of the cathode forms a working layer on the surface of the anode. 2. The field emission display of claim 1, wherein the support substrate is a conductive substrate, and the at least one emitter is formed on the conductive substrate. 3. The field emission display of claim 1, wherein the support substrate is an insulating substrate, the cathode further comprising a conductive substrate formed on the insulating substrate, the at least one emitter Formed on the surface of the conductive substrate facing the anode. 4. The field emission display of claim 2, wherein the wire is a continuous continuous layer formed on the surface of the emitter facing the anode. 5. The field emission display of claim 2, wherein the two light sheets are formed on a surface of the corresponding emitter facing the % pole. 6. The field emission display of claim 2 or 3, wherein the plurality of emitters M Mfc of the type 17 or the dot matrix arrangement is between the field emission display number emitters described in item 6 With insulation isolation. i) U.S. Patent No. 2 or 3, the field emission display, wherein the second material is selected from the group consisting of carbon nanotubes, carbon fiber, graphite carbon, diamond, stone antimony or metal. 、申月專利範圍第2或3項所述之場發射顯示器，其中 述發射體爲平頭錐形、錐形、圓台形或細小柱形。、 10. 如申％專利範圍第1項所述之場發射顯示器，其中，所诚 支撑基底及翻基板皆包含可變形材料。/、 ’L 11. 如申請糊範項騎之場發賴4，其巾，所述 陰極及陽極爲添加有可變形材料之銦錫氧化物導電膜或金 屬層。 12. 如申請專利範圍第1項所述之場發射顯示器，其中，所述 營光層上形成有一絕緣層以及一形成於所述絕緣層上之拇 極層。The field emission display of claim 2, wherein the emitter is a truncated cone, a cone, a truncated cone or a thin cylinder. 10. The field emission display of claim 1, wherein the support substrate and the flip substrate comprise a deformable material. /, ‘L 11. If the application for the paste is to be used, the cathode and the anode are indium tin oxide conductive films or metal layers to which a deformable material is added. 12. The field emission display of claim 1, wherein the camping layer is formed with an insulating layer and a thumb layer formed on the insulating layer. 器，其中，所述複 13. —種場發射顯示器之製造方法，其包括下列步驟： 提供一支撑基底； 形成一陰極於所述支撐基底之表面’該陰極包括至少一發 射體； X 形成一螢光層於所述陰極之至少一發射體的表面. 提供一透明基底； 形成一陽極於所述透明基底面對所逑陰極之表面； 將形成有陽極之透明基底與形成有陰極及營光層之支撐基 18 1325284 底密封形成-真空空間，密封時保持陽極與 對之位置。 ' 14.如申請專利範圍第13項所述之場發射顯示器之製造方 法’其中’所述陰極之形成方法包括步驟：直接於該支樓 基底上形成所述至少一發射體。 15.如申請專利範圍第13項所述之場發射顯示器之製造方 法，其中，所述陰極之形成方法包括步驟：形成一導電基The method of manufacturing a field emission display, comprising the steps of: providing a support substrate; forming a cathode on a surface of the support substrate; the cathode comprises at least one emitter; X forming a a phosphor layer is disposed on a surface of the at least one emitter of the cathode. Providing a transparent substrate; forming an anode on the surface of the transparent substrate facing the cathode; forming a transparent substrate having an anode and forming a cathode and a camping light The bottom support 18 1825284 bottom seal forms a vacuum space that maintains the anode and its position when sealed. 14. The method of fabricating a field emission display according to claim 13 wherein the method of forming the cathode comprises the step of forming the at least one emitter directly on the substrate of the branch. 15. The method of manufacturing a field emission display according to claim 13, wherein the method of forming the cathode comprises the steps of: forming a conductive base 螢光層處於面 底於支樓基底表面’再於該導電基底上形成所述至少一發 射體。 X 16.如申請專利範圍第14或15項所述之場發射顯示器之製造 方法，其中，所述至少一發射體爲陣列式或點陣式排佈之 複數發射體。 17. 如申請專利範圍第14或15項所述之場發射顯示器之製造 方法，其中’所述螢光層、陽極以及形成陰極之各步驟中 之形成方法選自薄膜沈積法、塗敷法、化學氣相沈積法、 濺鍍法、光阻製程法、絲網印刷法。 18. 如申請專利範圍第14或15項所述之場發射顯示器之製造 方法，其中’所述螢光層之形成步驟包括形成一連續之整 體層之螢光層於所述至少一發射體面對陽極之表面上。 19. 如申請專利範圍弟14或15項所述之場發射顯示器之製造 方法，其中，所述螢光層之形成步驟包括形成至少一螢光 單元於所述至少一發射體面對陽極之表面上，並使每個營 光單元對應一發射體。 20. 如申請專利範圍第14或15項所述之場發射顯示器之製造 19 1325284 方法，其中，所述發射體材料選自奈米碳管、碳纖維、石 墨碳、金剛石、碳化石夕或金屬。 21. 如申請專利範圍第16項所述之場發射顯示器之製造方 法，其中，所述複數發射體之間進一步形成有一絕緣間隔 層0 22. 如申請專利範圍第13項所述之場發射顯示器之製造方 法，其中，在所述螢光層形成後，進一步於所述螢光層上 形成一絕緣層以及於所述絕緣層上形成一柵極層。The phosphor layer is on the surface of the base of the support floor and the at least one emitter is formed on the conductive substrate. The method of fabricating a field emission display according to claim 14 or claim 15, wherein the at least one emitter is a plurality of emitters arranged in an array or a dot matrix arrangement. 17. The method of manufacturing a field emission display according to claim 14 or 15, wherein the method of forming the phosphor layer, the anode, and the step of forming the cathode is selected from the group consisting of a thin film deposition method, a coating method, Chemical vapor deposition, sputtering, photoresist process, screen printing. 18. The method of fabricating a field emission display according to claim 14 or claim 15, wherein the step of forming the phosphor layer comprises forming a continuous integral layer of a phosphor layer on the at least one emitter surface On the surface of the anode. 19. The method of fabricating a field emission display according to claim 14, wherein the step of forming the phosphor layer comprises forming at least one fluorescent unit on a surface of the at least one emitter facing the anode And make each camp light unit correspond to an emitter. 20. The method of manufacturing a field emission display according to claim 14 or claim 15, wherein the emitter material is selected from the group consisting of carbon nanotubes, carbon fibers, graphite carbon, diamond, carbon carbide or metal. The method for manufacturing a field emission display according to claim 16, wherein an insulating spacer layer is further formed between the plurality of emitters. 22. The field emission display according to claim 13 In the manufacturing method, after the phosphor layer is formed, an insulating layer is further formed on the phosphor layer and a gate layer is formed on the insulating layer. 2020