TWI308132B - Method for manufacturing carbon nanotubes - Google Patents

Method for manufacturing carbon nanotubes Download PDF

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TWI308132B
TWI308132B TW94133050A TW94133050A TWI308132B TW I308132 B TWI308132 B TW I308132B TW 94133050 A TW94133050 A TW 94133050A TW 94133050 A TW94133050 A TW 94133050A TW I308132 B TWI308132 B TW I308132B
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carbon nanotube
carbon
gas
catalyst
quartz boat
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TW94133050A
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TW200711997A (en
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Kai Liu
Kai-Li Jiang
Shou-Shan Fan
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Hon Hai Prec Ind Co Ltd
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.1308132 • 九、發明說明: 【發明所屬之技術領域】 本發明涉及一種奈米碳管之製備方法,尤其係涉及開口奈米碳管之製 備方法。 【先前技術】 奈米碳管係1991年首次發現之一種新型一維奈米材料。奈米碳管之特 殊結構決定其具有特殊之性質,如高抗張強度及高熱穩定性;隨著奈米破 管螺旋方式之變化,奈米碳管可呈現出金屬性或半導體性等。由於奈米碳 管具有理想之一維結構以及力學、電學'熱學等領域上之優良性質,其^ • 材料科學、化學、物理學等交又學科領域已展邊出廣闊之應用前景,包括 場發射平板顯示,單電子器件,原子力顯微鏡(Atomic F〇rce Micr〇saDpe, AFM)針尖,熱傳感器,光學傳感器,過濾器等等。因此,實現奈米碳管之 可控生長,降低奈米碳官之合成成本,係將奈米碳管推向應用之關鍵。 目前為提高奈米碳管之性能,研究以各種方法生長所需特定形態之奈 米碳管。例如奈米碳管尖端對場發射有顯著影響,同時,不同尖端形態之 奈米碳管於吸附、摻雜等物理化學性質上之研究以及於構件電子器件方面 都有重要意義。 一般來說,奈米碳管尖端有閉口與開口兩種形態。閉口奈米碳管係指 奈米碳管之尖端連接半個富勒烯球面從而使端口封閉,奈米碳管尖端沒有 零雜鍵;開口奈米碳管則係端口敞開,未被富勒烯球面封閉,通常尖端有 懸桂鍵並容易吸附其他分子。 目前製備奈米碳管主要有三财法:腿年s.丨丨細於驗·,354, 56’ Helical microtubules of graphitic carbon上公開之電弧放電法; 1992年T.W. Ebbesen等人於Nature,358, 220, Large-scale Synthesis of<1308132> IX. Description of the Invention: [Technical Field] The present invention relates to a method for preparing a carbon nanotube, and more particularly to a method for preparing an open carbon nanotube. [Prior Art] A new type of one-dimensional nanomaterial discovered in 1991 by the carbon nanotube system. The special structure of the carbon nanotubes determines its special properties, such as high tensile strength and high thermal stability. The nanocarbon tubes can exhibit metallic or semiconducting properties as the nanotubes spiral. Because the carbon nanotubes have an ideal one-dimensional structure and excellent properties in the fields of mechanics and electricals, such as materials, materials, science, chemistry, physics, etc., the field of application has already broadened its application prospects, including Launch panel display, single electronic device, atomic force microscope (Atomic F〇rce Micr〇saDpe, AFM) tip, thermal sensor, optical sensor, filter, etc. Therefore, realizing the controllable growth of carbon nanotubes and reducing the synthesis cost of nanocarbons is the key to the application of nanocarbon tubes. At present, in order to improve the performance of carbon nanotubes, it is studied to grow carbon nanotubes of a specific form required by various methods. For example, the tip of the carbon nanotube has a significant influence on the field emission. At the same time, the carbon nanotubes of different tip forms have important significance in the study of physical and chemical properties such as adsorption and doping, as well as in component electronic devices. In general, the tip of the carbon nanotube has two forms of closure and opening. Closed-nanocarbon tube means that the tip of the carbon nanotube is connected to the half fullerene sphere to close the port, and the carbon nanotube tip has no zero-bond; the open carbon nanotube is open, not fullerene The spherical surface is closed, usually with a hanging button at the tip and easy to adsorb other molecules. At present, there are three main methods for preparing carbon nanotubes: the age of the legs s. 丨丨 丨丨 于 ,, 354, 56' Helical microtubules of graphitic carbon disclosed in the arc discharge method; 1992 TW Ebbesen et al. in Nature, 358, 220 , Large-scale Synthesis of

Carbon Nanotubes上公開之雷射燒蝕法及1996年#· z. u等人於Science, 274,1701,Large-Scale Synthesis of Aligned Carbon Nanotubes上公 開之化學氣相沈積法。 電弧放電法和雷射燒躲不能控制奈米碳管之直徑和長度,製備方法 所用設備昂貴,很難於大尺寸基片上大規模生長奈米碳管,且製得産物中 6 1308132 ΐ米:他形態之碳産物共存’分離純化困難收率較低,難以規模 生里问可控性強、與現行之積體電路工藝相相容等優點,便於 進行大規模製備。 、系上 &amp;其中,有—獅騰床催化鶴法可批量製備直而開口率 官。其主要原理如下:於沸騰床催化裂解反應器中,將反應氣體以二^ 流^入,將催化劑“吹” &amp; ”狀態。因催化劑顆粒—直處於^ 之中’催化劑顆粒之間雜較大,催化劑表面上易生長出較直之奈米碳 又因催化綱粒之間相互碰撞使奈*碳管很容 &gt;折斷,這兩種作用之結 果,可形成直而開口率較高之奈米碳管。 '·° 上賴騰床催化裂解法中所制口储由催化_粒之間相 缺奈米碳管容騎_職,雜易行,卻不能麵絲碳管 度,且對奈米碳管本身結構也將造成破壞。 之奈口椒·w本綱破壞較小 【發明内容】 下面將以具體實施例說明一種奈米碳管製備方法。 -種奈米碳管製備方法,其包括以下步驟:提供—基底,該基底之一 表面沈積有-催化繼;將所述基底設置於—石英細,該石英舟具有— 開口;將所述石英舟設置於-反應爐内,該反應爐包括—進氣σ,使所述 石英舟之開口 _該進氣口;加熱使反應爐之溫度達到—預定溫度,並通 入反應氣體個化學IU目沈積法於基底上生長奈米碳管;待生長結束後, ,由-導氣裝置狀載氣《到所述石英舟内,以降低該石英舟内°之碳源 氣濃度,以使奈米碳管停止生長;在外力侧下分料米碳f與催化劑層, 得到開口奈米碳管或其陣列。 s 相較於先前技術,所述奈米碳管製備方法,於生長結束階段,藉由導 氣裝置引人大流量之載氣氣體到石英舟内,使催化劑層附近之碳源丄濃度 迅速降低’則奈米碳管將不能維持繼續生長,同時催化劑層自身溶有之峻 7 1308132 ’里也=足以生成石墨層’可避免催化劑包覆於其中,從而不容易形成常見 之包復、’Ό構’纟i外力侧分離奈米赶與催化劑層可製備出開口奈米破管 或其陣列。 【實施方式】 :面將結合關對本發明實施例作進—步找細說明。 明參見第-圖’本發明實施例提供之奈米碳管製備方法所使狀一種 ' 奈米石反官製備裝置10 ’其包括:一加熱裝置16 ; -反應爐20 ; -石英舟30, 其設置於反雜—導氣裝置,其-端通人該石英舟30 ; -基底40, 其3又置於石英舟30内,該基底4〇表面形成有一催化劑層5〇。 鲁 所述反應爐20包括一進氣口22及與其相對·出氣口24,其中該進氣 :22用於通人反應氣體,例如於奈料管生長前階段及生長階段可分別 藉由該進氣口 22向該反應爐20通入載氣氣體及碳源氣或載氣氣體與碳源氣 之混合氣體。 、/j載氣氣體包域氣、氨氣、氮氣或惰性纽。該載氣氣體例如於 奈官生長前階段通入到所述反應爐20及所述石英舟30中,可將其内部 之空氣排出;於生長階段可與碳源氣一同通入到所述反應爐2〇及所述石英 •^•30中可防止因碳源氣濃度過高導致奈米碳管之間產生無形碳而影響産 1之問題;於生長結練段通人騎❹英舟獅,可迅速降低催化劑層 鲁 5G附近之碳源氣;農度,從而避免奈米碳管形成常見之包覆結構。 所述碳源氣包括碳氫化合物,如乙炔、甲烧、乙燒、乙烯等,於生長 階段^生成碳單元,該碳單元吸驗所述催化劑層5()表面,從而生長^ 奈米碳管。 …,述石英舟3G為-半封閉型容器,其具有—開σ32,該開口犯朝向所 述進氣口22,而其他端為封閉,該封閉端由複數個封閉端面構成。 所述反應爐包括石英管。 所述導氣裝置包括-導氣管34,該導氣管34-端通人所述石英舟3〇, 形成一吹氣口36。該導氣管34從與開口32相對之端面通入該石英舟3〇 f可以從半封_石英之側壁上開σ接人,只要使吹氣σ36對準Α底 40,使其輸出之載氣氣體能直接吹到基底40生長奈米碳管之表面即可:豆 1308132 ' 中側i係4曰介於開口以及與開口相對之端面之間之容器壁。並且,該吹 氣=36與基底40之距離盡可能小,以求通入載氣氣體14之瞬間能迅速降低 石英舟30内之催化劑層50附近之碳源氣濃度,從而避免形成常見之包覆結 構。 、。 所述基底40用於生長奈米碳管,其表面之催化劑層5〇可利用熱沈積、 電子束沈積、蒸鍍或濺射法來完成。 门‘參見第一圖,具體說明本發明貫施例提供之奈米石炭管製備方法, 其包括以下步: 首先,提供一基底40,該基底40之一表面沈積有一催化劑層5〇 ;將上 _ 述基賴設置於-石英舟_,該石英舟财J:端開口犯;提供—導氣裝 置’其包括-導氣管34,該導氣管34-端通入該石英舟30,形成一吹氣口' 36,將上述石英舟30設置於一反應爐2〇内,該反應爐2〇包括一進氣口以及 一出氣口24。 所述基底40材料可選用矽,也可選用其他材料,如氧化鎂、石英等。 所述催化劑層50包括催化劑粉末層或鍍於基底4〇上之催化劑金屬膜 層,該催化劑金屬膜層其材料包括鐵、姑、敍其合金材料等,該催化劑 粉末層其材料包括金屬鐵粉、金屬鐵網、金屬、金屬翻或氧化^ 金屬鐵之粉末混合物等。選用催化劑金屬膜層易於生成陣列,而選用催化 劑粉末層産量高,可根據實際需要選用其形態。 本實施例中,反應爐20選用管徑為-寸之石英管;石英舟3〇選用具有 開口32之半封閉型谷器,基底4〇選用石夕片;催化劑層選用鐵金屬膜層, 可藉由蒸鍍法在該基底40上形成該催化劑層5〇。 ' 其次,於常壓下從反應爐20之進氣口22通入載氣氣體,並藉由加熱裝 置16對反應爐20進行加熱,加熱使得反應爐2〇之溫度達到—預定溫度並^ 入反應氣體12,即碳源氣或碳源氣與載氣氣體之混合氣體, 沈積法於基底40上生長奈米碳管。 所述載氣氣體可選用氫氣、氨氣、氮氣或惰性氣體;碳源氣可選用— 氧化碳’或碳氫化合物如乙块H淡、乙_,絲氣體與碟源氣 之通氣流量比例為5 ·· HO : 1。本實施例中,分別選用廉價氣體氬氣及乙 1308132 炔作為載氣氣體及碳源氣。 所述反應爐溫度可為600〜720攝氏度,優選為62〇〜690攝氏度。 反應預定時間後’由於催化劑之作用,供應到反應爐之碳源氣 熱解成碳單it(OC或〇和氫氣⑽)。碳單极附於催化劑層5味面,從而 生長出奈米碳管,而氫氣可藉由反應爐2G之出氣口24排出。本實二 應時間為30~60分鐘。 、 待生長結束後,通過導氣管34引入載氣氣體14如氬氣,使催化劑 〇自身冷有之&amp;里也不足以生成石墨層而防止形成包覆結構,並使生 ^碳管與催化劑層50結合,如第二圖所示,$成催化劑顆粒52與奈 官60根部接觸之結構,其結合力比常見之包覆結構較弱。 、 iff ’於外ί侧下分離奈米碳管與催化麵粒52,得到開口奈米碳 =;其結合力較弱,於輕弱之外力作用下兩者报容易發生=:= 成如第三類示之開口奈米碳·,料力作用可以係超聲紐或者其 =作用造紅_縣。絲’為·絲碳#婦化_機之分離操 作,可先停止對反應爐20加熱,以使石英舟3〇冷卻。 密 本實施例選用催化劑金屬膜層,因而催化劑顆粒與基底4〇結合較為緊 ,因而可在另—基片表面附加祕物f,枯住並外拉奈求碳管或氣陣列 τ=二ϊϊί 催化劑層5°分離,從而獲得位於另-基片上之開口奈 其陣列。對於選用催化劑粉末層之情況,其催化劑顆粒與基底4〇 、··。a力相對於使㈣化劑金屬縣較弱,可藉由 可分離奈米碳管鎌化繼5〇。 即 參見第四圖鮮五圖,根據伽實關麟 及低倍率之透射電子顯微鏡照片可以看出,太 ^ 冋七羊 高度能夠達到數十之至百《 看出—端開口,整個陣列 構’ 署ί發明實施例中所使用之石英舟亦可採用其他類似結 可配合所述石英舟之結構而設置,只要縣從該吹 孔引入之載乳乳體可迅速降低碳源氣濃度效果即可。 10 1308132 雖然本發明實施例所採用之熱化學氣相沈積設備為臥式結構,但亦 應用其他如立式、流動床式熱化學氣相沈積設備等。 採用該熱化學氣相沈積方法還可以進行批量製備,即, =米碳管陣列之場發㈣件或其他電子器件時,本發明實施例之方法ς η藉由設計基底催化劑層之圖案來實現奈米碳管之可控生長。 另外’本發明實施财揭露之奈米碳管_之生辦^圍盘 ,範圍僅為較佳實施例,本技術領域之技術人員應明白 亦可同樣生長出奈米石炭管或其陣列,生長時間將決定該奈米碳管之^度皿度 與先前技術相比較,本發明實施靖提供心種奈米碳管製^ 迅遠束ΐ段採用從石英舟之吹氣口通入大量載氣氣體之^法, 奴源氣之濃度,使生長之奈米碳管與催化劑顆粒不容易形成常見 之構’其奈米碳管與催化劑顆粒之結合力較包覆結構要弱.,於輕ί 姐查訂’即可分離奈#碳管與催彳_縣,從喊得卩和夺乎碳管 粒之間碰撞而導致之奈米碳管 陣列之高度。該裝置結構“,下生長之奈米碳管或其 製備開口奈米碳管或其陣列\備方㈣早易订’可用於工業上大規模 另外’根據本發明實施例所提供之一 i長之溫度低’細〜72__^生長“碳方Ϊ中ΐ 度均:達到幾爾,蝴管陣列之高 以上所述二广丄要件,/依法提出專利申請。惟, 本案發明精神所作之等雜飾凡縣本案技藝之人士,於援依 【圖式簡單說明】^ 一灸匕,白應包含於以下之申請專利範圍内。 意圓第本發明實施例提供之奈米碳”備方法所使用裝置之結構示 Π 1308132The laser ablation method disclosed in Carbon Nanotubes and the chemical vapor deposition method disclosed in 1996, Z., et al., Science, 274, 1701, Large-Scale Synthesis of Aligned Carbon Nanotubes. The arc discharge method and laser burning do not control the diameter and length of the carbon nanotubes. The equipment used in the preparation method is expensive, it is difficult to grow the carbon nanotubes on a large-scale substrate, and the product is 6 1308132 glutinous rice: he The coexistence of the carbon products of the form is difficult to separate and purify, and it is difficult to achieve large-scale control in the scale and the compatibility with the current integrated circuit process. , Department &amp; Among them, there is - lion Teng bed catalytic crane method can be prepared in batches and the opening rate is official. The main principle is as follows: In the fluidized bed catalytic cracking reactor, the reaction gas is flowed in to the catalyst to "blow" &amp; "state. Because the catalyst particles - directly in the ^" between the catalyst particles On the surface of the catalyst, it is easy to grow a relatively straight nanocarbon and the carbon nanotubes are easily broken by the collision between the catalytic particles. As a result of these two effects, a nanometer having a high aperture ratio can be formed. Carbon tube. '·° On the ruthenium bed catalytic cracking method in the storage of the mouth by the catalyst _ grain between the lack of carbon nanotubes riding capacity _ job, miscellaneous, but can not face the carbon tube degree, and The structure of the carbon nanotube itself will also cause damage. The Naijiao pepper·w is less damaged. [Inventive content] A method for preparing a carbon nanotube will be described below by way of specific examples. The method comprises the steps of: providing a substrate, one surface of the substrate is deposited with a catalyst; the substrate is disposed on the quartz, the quartz boat has an opening; and the quartz boat is disposed in the reactor, the reaction The furnace includes an intake σ to make the quartz boat Opening_the inlet port; heating to bring the temperature of the reaction furnace to a predetermined temperature, and introducing a chemical gas IU mesh deposition method to grow the carbon nanotubes on the substrate; after the growth is completed, the gas guiding device is shaped The carrier gas "into the quartz boat to reduce the concentration of the carbon source gas in the quartz boat to stop the growth of the carbon nanotubes; and to divide the carbon carbon f and the catalyst layer under the external force side to obtain the open nanocarbon Tube or array thereof. Compared with the prior art, the carbon nanotube preparation method introduces a large amount of carrier gas into the quartz boat by a gas guiding device at the end of the growth process to make the carbon source near the catalyst layer. The cesium concentration is rapidly reduced, so the carbon nanotubes will not be able to sustain the growth, and the catalyst layer itself will be dissolved. 7 1308132 'The inside is also enough to form a graphite layer' to avoid the catalyst coating, which makes it difficult to form a common package. The open-body and the catalyst layer can be used to prepare an open-nano-tube or an array thereof. [Embodiment]: The surface will be described in conjunction with the embodiment of the present invention. See - Figure 'The carbon nanotube preparation method provided by the embodiment of the present invention makes a 'nose stone reverse preparation apparatus 10' comprising: a heating device 16; - a reaction furnace 20; - a quartz boat 30, which is disposed at The anti-hybrid gas guiding device is connected to the quartz boat 30; the substrate 40 is placed in the quartz boat 30, and a catalyst layer 5 is formed on the surface of the substrate 4. The reaction furnace 20 includes An air inlet 22 and an opposite air outlet 24 thereof, wherein the air inlet 22 is used to pass a reaction gas, for example, the gas inlet 22 can be respectively passed to the reaction furnace in the pre-growth stage and the growth stage. 20: a carrier gas and a carbon source gas or a mixed gas of a carrier gas and a carbon source gas, / / a carrier gas gas, ammonia gas, nitrogen gas or inert gas. The carrier gas gas is, for example, before growth The stage is introduced into the reaction furnace 20 and the quartz boat 30, and the air inside is discharged; in the growth stage, the carbon source gas can be introduced into the reaction furnace 2 and the quartz. 30 can prevent the production of invisible carbon between carbon nanotubes due to the high concentration of carbon source gas. ; In practice knot growth period Walter boat ride ❹ British lion, the carbon source gas can rapidly reduce the vicinity of the catalyst layer. 5G Lu; agricultural degree, carbon nanotube is formed so as to avoid the common cladding structure. The carbon source gas includes a hydrocarbon, such as acetylene, methyl ketone, ethylene bromide, ethylene, etc., and generates a carbon unit in a growth stage, and the carbon unit absorbs the surface of the catalyst layer 5 () to grow nano carbon tube. The quartz boat 3G is a semi-closed type container having an opening σ32, the opening being directed toward the air inlet 22, and the other ends being closed, the closed end being constituted by a plurality of closed end faces. The reactor includes a quartz tube. The air guiding device comprises an air guiding tube 34, and the air guiding tube 34-end passes through the quartz boat 3〇 to form a blowing port 36. The air guiding tube 34 is inserted into the quartz boat 3〇f from the end surface opposite to the opening 32, and can be opened from the side wall of the semi-sealing_quartz, as long as the blowing gas σ36 is aligned with the bottom 40 to output the carrier gas. The gas can be directly blown onto the surface of the substrate 40 to grow the carbon nanotubes: Bean 1308132 'The middle side is the container wall between the opening and the end face opposite the opening. Moreover, the distance between the blow = 36 and the substrate 40 is as small as possible, so that the moment of the introduction of the carrier gas 14 can rapidly reduce the concentration of the carbon source gas in the vicinity of the catalyst layer 50 in the quartz boat 30, thereby avoiding the formation of a common package. Cover structure. ,. The substrate 40 is used to grow a carbon nanotube, and the catalyst layer 5 on the surface thereof can be completed by thermal deposition, electron beam deposition, evaporation or sputtering. Referring to the first figure, a method for preparing a nano-carboniferous pipe provided by the embodiment of the present invention is specifically described. The method includes the following steps: First, a substrate 40 is provided, and a catalyst layer 5 is deposited on one surface of the substrate 40; _ 基 赖 设置 设置 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英 石英The gas port '36, the quartz boat 30 is disposed in a reaction furnace 2, and the reaction furnace 2 includes an air inlet and an air outlet 24. The material of the substrate 40 may be selected from ruthenium, and other materials such as magnesium oxide, quartz and the like may also be used. The catalyst layer 50 comprises a catalyst powder layer or a catalyst metal film layer coated on the substrate 4. The catalyst metal film layer comprises iron, austrasia, and an alloy material thereof, and the catalyst powder layer comprises a metal powder. , metal iron mesh, metal, metal turning or oxidation ^ metal iron powder mixture. The catalyst metal film layer is easy to form an array, and the catalyst powder layer is selected to have a high yield, and the shape can be selected according to actual needs. In the present embodiment, the reaction furnace 20 is a quartz tube having a diameter of -inch; the quartz boat 3 is a semi-closed type trough having an opening 32, the base 4 is a stone slab; and the catalyst layer is an iron metal film. The catalyst layer 5 is formed on the substrate 40 by an evaporation method. Next, the carrier gas is introduced from the inlet 22 of the reaction furnace 20 under normal pressure, and the reaction furnace 20 is heated by the heating device 16, and the temperature of the reaction furnace 2 is brought to a predetermined temperature and is heated. The reaction gas 12, that is, a carbon source gas or a mixed gas of a carbon source gas and a carrier gas, is deposited on the substrate 40 to grow a carbon nanotube. The carrier gas may be selected from hydrogen, ammonia, nitrogen or an inert gas; the carbon source gas may be selected from - carbon oxide 'or hydrocarbon such as B block H, B, and the ratio of the aeration flow rate of the wire gas to the dish source gas is 5 ·· HO : 1. In this embodiment, an inexpensive gas argon gas and a B 1308132 alkyne are selected as a carrier gas and a carbon source gas, respectively. The reactor temperature may be from 600 to 720 degrees Celsius, preferably from 62 to 690 degrees Celsius. After the reaction for a predetermined period of time, the carbon source gas supplied to the reaction furnace is pyrolyzed into carbon mono it (OC or helium and hydrogen (10)) due to the action of the catalyst. The carbon monopole is attached to the catalyst layer 5 to grow the carbon nanotubes, and the hydrogen gas can be discharged through the gas outlet 24 of the reaction furnace 2G. The actual time should be 30~60 minutes. After the growth is completed, the carrier gas 14 such as argon is introduced through the air guiding tube 34, so that the catalyst crucible itself is not enough to form a graphite layer to prevent the formation of the coating structure, and the carbon nanotubes and the catalyst are formed. The layer 50 is bonded. As shown in the second figure, the structure in which the catalyst particles 52 are in contact with the 60 portions of the nephew has a weaker binding force than the conventional coating structure. , iff 'is separated from the outer side of the carbon nanotubes and the catalytic surface 52, to obtain open nanocarbon =; its binding force is weak, under the action of weak external forces are easy to occur =: = Cheng Ru The three types of open nanocarbons, the effect of the material can be ultrasound or its = role in red _ county. The wire is a separation operation of the silk carbon #妇化_machine, and the heating of the reaction furnace 20 can be stopped first to cool the quartz boat. In the embodiment of the present invention, the catalyst metal film layer is selected, so that the catalyst particles are tightly bonded to the substrate 4〇, so that the secret material f can be attached to the surface of the other substrate, and the carbon nanotubes or the gas array τ=2ϊϊ can be obtained. The catalyst layer was separated by 5° to obtain an array of openings on the other substrate. In the case where a catalyst powder layer is selected, the catalyst particles and the substrate are 4〇, . The a force is weaker than that of the (four) chemical metal county, and can be separated by 5 〇 by separable carbon nanotubes. That is to see the fifth picture of the fifth picture, according to the transmission electron micrograph of Jia Shiguan Lin and low magnification, it can be seen that the height of the ^7 羊7 sheep can reach tens to hundreds of "seeing - end opening, the entire array structure" The quartz boat used in the embodiment of the invention may also be provided with other similar knots in combination with the structure of the quartz boat, as long as the loaded milk emulsion introduced from the blowhole can rapidly reduce the concentration of the carbon source gas. . 10 1308132 Although the thermal chemical vapor deposition apparatus used in the embodiment of the present invention has a horizontal structure, other vertical, fluidized bed thermal chemical vapor deposition equipment and the like are also applied. The thermal chemical vapor deposition method can also be used for batch preparation, that is, when the (four) piece of the carbon nanotube array or other electronic devices, the method of the embodiment of the present invention is realized by designing the pattern of the base catalyst layer. Controllable growth of carbon nanotubes. In addition, the present invention is not limited to the preferred embodiment, and those skilled in the art should understand that the carbon nanotube tube or its array can also be grown and grown. The time will determine the degree of the carbon nanotubes compared with the prior art. The present invention provides a control of the carbon nanotubes of the heart-shaped nanometers. The Xunyuan beam section uses a large amount of carrier gas from the blowing port of the quartz boat. The method, the concentration of the slave gas, makes the growing carbon nanotubes and catalyst particles not easily formed into a common structure. The binding force between the carbon nanotubes and the catalyst particles is weaker than that of the coating structure. Check the 'can be separated from the carbon tube and the 彳 _ county, from the height of the carbon nanotube array caused by the collision between the shouting and the carbon tube particles. The structure of the device ", the underlying carbon nanotubes or the preparation thereof, or the array of open carbon nanotubes or their arrays (4) are easy to order" can be used in industrial scales and additionally 'according to one embodiment of the present invention. The temperature is low 'fine ~ 72__^ growth" carbon square ΐ ΐ : : : : : : : : : : : : : : : , , , , , , , , , , , , , , , , , , However, the spirit of the invention in this case is similar to that of the people in the case of the county. Yu Yiyi [Simple Description] ^ A moxibustion, white should be included in the scope of the following patent application. The structure of the device used in the method for preparing nano carbon provided by the embodiment of the present invention is Π 1308132

第二圖係根據本發明實施例之奈 部與催化劑顆粒接觸之示意圖。不 米碳管製備方法製備出之奈米碳管根 管之綠據本發明實施例之奈未碳管製備方法製備出之開σ奈米碳 =四圖係本發明實施例之奈米碳管製備方法獲得 倍率透射電子顯微鏡照片。 第五圖係、本發明實施例之奈米碳f製備方法獲得之開口奈純管 倍率透射電子顯微鏡照片。 -The second figure is a schematic illustration of the contact of the naphthalene with the catalyst particles in accordance with an embodiment of the present invention. Nano-carbon tube root tube prepared by the method for preparing carbon nanotubes according to the present invention. The sigma carbon carbon prepared according to the preparation method of the present invention is a nano-carbon tube preparation according to an embodiment of the present invention. The method obtains a magnification transmission electron microscope photograph. The fifth figure is a transmission electron micrograph of the open-nano tube obtained by the method for preparing nanocarbon f according to the embodiment of the present invention. -

【主要元件符號說明】 反應氣體 12 加熱裝置 16 進氣口 22 石英舟 30 導氣管 34 基底 40 奈米碳管製備裝置 10 載氣氣體 14 反應腔 20 出氣口 24 開口 32 吹氣π 36 催化劑層 50[Main component symbol description] Reaction gas 12 Heating device 16 Air inlet 22 Quartz boat 30 Air pipe 34 Base 40 Carbon nanotube preparation device 10 Carrier gas 14 Reaction chamber 20 Air outlet 24 Opening 32 Blowing gas π 36 Catalyst layer 50

Claims (1)

1308133—— . 公告本 • 十、申請專i彳範圍: 1· 一種奈米碳管製備方法,其包括以下步驟: 提供一基底,該基底之一表面沈積有一催化劑層; 將所述基底設置於一石英舟内,該石英舟具有一開口; 將所述石英舟設置於一反應爐内,該反應爐包括一進氣口 舟之開口朝向該進氣口; 、 加熱使反應爐之溫度達到一預定温度,並通入反應氣體利用化學氣相沈 積法於基底上生長奈米碳管; 待生長結束後,藉由一導氣裝置引入載氣氣體到所述石英舟内,以降低 % 該石英舟内之碳源氣濃度’以使奈米碳管停i生長; - 於外力作用下分離奈米碳管與催化劑層,得到開口奈米碳管或其陣列。 • 2.如申請專利範圍第1項所述之奈米碳管製備方法’其中,所述催化劑層包 括催化劑粉末層或鍍在所述基底上之催化劑金屬膜層。 3. 如申請專利範圍第2項所述之奈米碳管製備方法,其中,所述催化劑粉末 材科選自金屬鐵粉、金屬鐵網、金屬鎳粉、金屬鎳網或氧化鋁和金屬鐵 之粉末混合物。 4. 如申請專利範圍第2項所述之奈米碳管製備方法,其中,所述催化劑金屬 膜層材料包括鐵、鈷、錄或其合金。 W ^ 5.如申請專利範圍第1項所述之奈米碳管製備方法,其中,所述反應氣體包 括乙炔、曱烷、乙烯、一氧化碳。 6.如申請專利範圍第1項所述之奈米碳管製備方法,其中,所述載氣氣體包 括氫氣、氨氣、氮氣或惰性氣體。 7·如申請專利範圍第1項所述之奈米碳管製備方法,其中,所述外力包括超 聲震盪。 ° 8·如申請專利範圍第1項所述之奈米碳管製備方法,其中,所述載氣氣體係 藉由連接於石英舟之開口之相對一端之導氣管通入石英舟。 9.如申請專利範圍第1項所述之奈米碳管製備方法,其中’在外力作用下分 離奈米碳管與催化劑層之前,進一步包括步驟:停止對反應燐加埶 石英舟冷卻。 * .、、', 131308133—— . Announcement • Ten, application specific scope: 1. A method for preparing a carbon nanotube, comprising the steps of: providing a substrate having a catalyst layer deposited on one surface thereof; In a quartz boat, the quartz boat has an opening; the quartz boat is disposed in a reaction furnace, the reaction furnace includes an opening of the inlet port toward the air inlet; and heating causes the temperature of the reaction furnace to reach one Predetermining the temperature, and introducing a reaction gas to the carbon nanotube by chemical vapor deposition on the substrate; after the end of the growth, introducing a carrier gas into the quartz boat by a gas guiding device to reduce the quartz The carbon source gas concentration in the boat is used to stop the growth of the carbon nanotubes; - the carbon nanotubes and the catalyst layer are separated by an external force to obtain an open carbon nanotube or an array thereof. 2. The method for producing a carbon nanotube according to claim 1, wherein the catalyst layer comprises a catalyst powder layer or a catalyst metal film layer plated on the substrate. 3. The method for preparing a carbon nanotube according to claim 2, wherein the catalyst powder material is selected from the group consisting of metal iron powder, metal iron mesh, metal nickel powder, metal nickel mesh or aluminum oxide and metallic iron. a powder mixture. 4. The method for producing a carbon nanotube according to claim 2, wherein the catalyst metal film layer material comprises iron, cobalt, or an alloy thereof. The method for producing a carbon nanotube according to claim 1, wherein the reaction gas comprises acetylene, decane, ethylene, carbon monoxide. 6. The method for producing a carbon nanotube according to claim 1, wherein the carrier gas comprises hydrogen, ammonia, nitrogen or an inert gas. 7. The method of preparing a carbon nanotube according to claim 1, wherein the external force comprises ultrasonic oscillation. The method for preparing a carbon nanotube according to claim 1, wherein the carrier gas system is introduced into the quartz boat by an air duct connected to the opposite end of the opening of the quartz boat. 9. The method for preparing a carbon nanotube according to claim 1, wherein before the separating the carbon nanotube and the catalyst layer by an external force, the method further comprises the step of: stopping the reaction of the quartz crucible to cool. * .,,', 13
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