TWI290337B - Pad conditioner for conditioning a CMP pad and method of making the same - Google Patents

Pad conditioner for conditioning a CMP pad and method of making the same Download PDF

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Publication number
TWI290337B
TWI290337B TW094126964A TW94126964A TWI290337B TW I290337 B TWI290337 B TW I290337B TW 094126964 A TW094126964 A TW 094126964A TW 94126964 A TW94126964 A TW 94126964A TW I290337 B TWI290337 B TW I290337B
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Taiwan
Prior art keywords
dresser
manufacturing
grooves
substrate
abrasive grains
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TW094126964A
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Chinese (zh)
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TW200707531A (en
Inventor
Ying-Che Shih
Original Assignee
Princo Corp
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Application filed by Princo Corp filed Critical Princo Corp
Priority to TW094126964A priority Critical patent/TWI290337B/en
Priority to US11/163,548 priority patent/US20070037493A1/en
Priority to JP2006038891A priority patent/JP2007044863A/en
Publication of TW200707531A publication Critical patent/TW200707531A/en
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Publication of TWI290337B publication Critical patent/TWI290337B/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/0027—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for by impregnation

Abstract

The invention provides a pad conditioner for conditioning a CMP pad. The pad conditioner comprises a substrate, a plurality of cavities exist thereon, a bonding agent filled in the cavities, and abrasive particles securely placed and fixed in the cavities. The cavities are arranged in a regular manner and each of their sizes can accommodate only one abrasive particle. The cavities may be bowl-shaped or other shaped. A method of making such a pad conditioner is also disclosed.

Description

1290337 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種修整晶圓研磨墊的修整器及其製造方法， 尤其是關於一種修整晶圓研磨墊的修整器及其製造ϋ，其中磨 粒均勻地分佈在修整器上，並穩固地固著在基板上。 【先前技術】 ^在目前半導體製造程序中，隨著製造工藝的進步，晶片的線 寬與面積都愈來愈小，而導線則愈來愈密集且需要堆聂命炎俞吝 層’此時晶片表面的平坦化也就愈形重要，而化學機&^夕 (Chetmcal Mechanical Polishing，CMP)是目前唯一能提供全面性平 坦化的一種技術。 、 在進行CMP時’石夕晶圓由一旋轉或移動的研磨頭壓持在一旋 ，的研，研磨墊上注入有研磨液，磨液—般除了細微研 二含有酸性或驗性溶液，酸性或驗性溶液的選用視 整’如介電f—般是氧化物，此時研磨液通 液:研磨墊的材料-般是聚卿 具有孔洞，因此在進行⑽時，雖然石夕晶圓 部分會被水帶走’然而仍有少部分的碎屑會 ίΐίϊΐ ΐϊ的孔洞中’使得研磨墊表面愈來愈不粗糙，研 要有—修整器，其能將研磨墊表面的再 分佈在研舰形:繼域使嘯均勻地 琴,常見的有兩種:電鍍修整器與合金硬焊修整 ^ /、中電鑛^整盗的磨粒是以電鑛固著於美杯卜，If猫‘ m 極易造成磨粒脫落而刮‘晶圓，再者電i声 必而盍住大Η目練，才能卡健粒，減職粒的凸 5 1290337 限，不能有效修整研磨墊，並常阻塞排屑，因此目前CMp 少使用電鑛修整n;另外，在合金硬焊修整器巾，磨粒是^合^ ，焊固著於基板上，此種化學性固著的固著力較佳，因此磨ς脫 :的情況有大幅改善，但是仍有一些缺點，如練在基板上的分 不均勻，不論疋磨粒之間的間隔不均勻或磨粒所在高度的不均 二，均使得磨粒不均勻地施力於研磨墊，極易使部分承受較大 ，的磨粒整個脫落或是部分尖角碎裂，仍會造成晶圓刮傷，另外， ，粒分佈的間隔太近也極易造成碎屑的堆積，一則使修整器工 $變差，制碎屑積累過多，掉落之後也極糾傷晶圓，因此 改良上述問題的各種合金硬焊修整器已被提出。 在美國專利第6368198號中，揭露有一種修整器及其製造方 圖1所示，其中以焊料層2將磨粒3固著在基板U、，而磨粒3 月卞較均勻地分佈的原因在於使用一有孔洞的模板(未顯示 磨粒^導入焊料層2中定位，再進行硬焊，此外，更可以在其上以 物理氣相沉積一層耐酸鹼的類鑽碳DLC(Diam〇nd Like以此⑽。 然而，在此種習知修整器中，磨粒分佈的均勻性仍有進一步改善 ，工間，並且磨粒脫落的情形還是偶有發生。因此，如何提供一 ^磨粒分佈均勻且穩固地固著在基板的修整器仍是半導體 藝目前所急需的。 【發明内容】 因此，本發明之一目的在於提供一種均勻地修整晶圓研磨墊 的修整器，及其製造方法。 本發明之另一目的在於提供一種修整晶圓研磨墊的修整器， 八中磨粒係穩固地固著在基板上，及此種修整器的製造方法。 ^本發明中，磨粒是指所_高硬度的晶體，包含天然鑽石、 ，皁晶鑽石、人造多晶鑽石(pCD)、立方氧化硼(cBN)、多晶立 方氧化硼(PcBN)等。 在本發明中，基板是指由各種材料構成的一種底材，如金屬、 6 1290337 合金、陶瓷等等。 在本發明中，凹槽是用以容納與固著磨粒，凹槽可以县久錄 形狀，如半圓球形、碗形、筒形、錐形等。凹槽了以疋各種 枓ΐίΓ】中’固著材料是各種可以固著基板與磨粒的任何材 枓，包含金屬、合金等等。 』丨何 本發明提供-種修整晶圓研磨墊的修整器，包含··一基板， 數個凹槽;固著材料’充填在該a數個 二ίΐ!磨粒’該複數個磨粒被該固著材料固著在該1290337 IX. The invention relates to a dresser for trimming a wafer polishing pad and a manufacturing method thereof, and more particularly to a dresser for trimming a wafer polishing pad and a manufacturing crucible thereof, wherein the grinding machine The particles are evenly distributed on the dresser and firmly fixed to the substrate. [Prior Art] ^ In the current semiconductor manufacturing process, with the advancement of the manufacturing process, the line width and area of the wafer are getting smaller and smaller, and the wires are becoming more and more dense and need to be piled up. The flattening of the wafer surface is becoming more important, and the Chemtmcal Mechanical Polishing (CMP) is currently the only technology that provides comprehensive planarization. When performing CMP, the Shixi wafer is pressed by a rotating or moving grinding head, and the polishing pad is filled with a polishing liquid. The grinding liquid generally contains an acidic or an experimental solution, acidic or The choice of the test solution depends on the whole 'such as dielectric f- is an oxide. At this time, the liquid of the polishing liquid: the material of the polishing pad is generally a hole with poly-clear, so when performing (10), although the part of the stone wafer will Taken away by the water's however, there is still a small amount of debris that will ΐ ϊΐ 中 ' ' ' ' 使得 使得 使得 使得 使得 使得 使得 使得 研磨 研磨 研磨 研磨 研磨 研磨 研磨 研磨 研磨 研磨 研磨 研磨 研磨 研磨 研磨 研磨 研磨 研磨 研磨 研磨 研磨 研磨 研磨 研磨 研磨 研磨 研磨 研磨 研磨 研磨: Following the domain to make the whistle evenly, there are two common types: electroplating dresser and alloy brazing trimming ^ /, Zhongdian mine ^ smashing abrasive grains are fixed in the electric cup by electric ore, If cat ' m It is easy to cause the abrasive particles to fall off and scrape the 'wafer, and then the electric sound must be smashed and the big eye can be trained, in order to strengthen the grain, reduce the convexity of the grain 5 1290337 limit, can not effectively trim the polishing pad, and often block the row Chips, so currently CMp uses less ore dressing n; in addition, in the alloy brazing dressing wipes, grinding It is ^^^, soldered on the substrate, the fixing force of this chemical fixing is better, so the situation of grinding and squeezing is greatly improved, but there are still some disadvantages, such as uneven distribution on the substrate. Regardless of the uneven spacing between the honing particles or the unevenness of the height of the abrasive grains, the abrasive grains are unevenly applied to the polishing pad, and it is easy to make the portion to withstand a large portion, and the abrasive grains are completely detached or partially Cracked corners can still cause scratches on the wafer. In addition, the spacing of the particles is too close and the accumulation of debris is very easy. One makes the dresser $ worse, the accumulated debris accumulates, and after falling, The wafers are extremely rectified, so various alloy brazing trimmers that have improved the above problems have been proposed. In U.S. Patent No. 6,368,198, there is disclosed a dresser and its manufacturer as shown in Fig. 1, in which the abrasive layer 3 is fixed to the substrate U by the solder layer 2, and the abrasive grains are more evenly distributed in March. The use of a template with holes (not shown in the solder layer 2 is introduced into the solder layer 2, and then brazed, in addition, a layer of acid-resistant diamond-like carbon DLC (Diam〇nd) can be deposited thereon by physical vapor deposition. Like (10). However, in this conventional dresser, the uniformity of the distribution of the abrasive grains is still further improved, and the situation of the abrasive grains falling off occurs occasionally. Therefore, how to provide a distribution of abrasive grains A trimmer that is uniformly and firmly fixed to a substrate is still highly desirable in the art of semiconductors. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a trimmer for uniformly trimming a wafer polishing pad, and a method of fabricating the same. Another object of the present invention is to provide a dresser for trimming a wafer polishing pad, wherein the abrasive grains are firmly fixed on the substrate, and a method of manufacturing the dresser. In the present invention, the abrasive grain refers to the _High hardness crystal Including natural diamond, soap crystal diamond, artificial polycrystalline diamond (pCD), cubic boron oxide (cBN), polycrystalline cubic boron oxide (PcBN), etc. In the present invention, the substrate refers to a bottom composed of various materials. Materials, such as metal, 6 1290337 alloy, ceramics, etc. In the present invention, the groove is used to accommodate and fix the abrasive grains, and the groove can be recorded in a long-term shape, such as a semi-spherical shape, a bowl shape, a cylindrical shape, and a conical shape. Etc. The sturdy material is any material that can hold the substrate and the abrasive particles, including metals, alloys, etc. 』 The trimmer comprises: a substrate, a plurality of grooves; the fixing material is filled in the plurality of particles; the plurality of abrasive grains are fixed by the fixing material

尺寸較佳僅能容納i磨粒，該^數 固著材料係以硬焊方式固著該複數個磨粒於該複Preferably, the size can only accommodate the i-abrasive particles, and the plurality of fixing materials fix the plurality of abrasive grains in a brazing manner to the composite

、、上述修整晶圓研磨墊的修整器較佳更包含一潤滑層，並 ^層係聚對二甲苯(Parylene)、碳化鶴碳膜(wc/c)、鑽石膜二 此潤滑層可提高排屑速度，減少碎屑堆積，並L 、此外]本發明提供一種用以修整晶圓研磨墊之修整器的製造 =法，，含：提供一基板；在該基板之上表面形成複數個凹槽； =填固著材料在該複數個凹槽中；置放複數個絲在該固著^料 中；以及，，固著材料穩固地固著該複數個磨粒與該基板。 其中該複數個凹槽較佳係依規則性排列。該複數個凹槽之 /個凹槽尺寸較佳僅能容納一顆磨粒。該複數個凹槽較佳是碗 形。該固著材料細硬焊方朗賴複數個絲於該複數個凹槽 内 二亡述修整器的製造方法，更包含：形成一潤滑層在該基板、 該固著材料與該複數個磨粒上面。該潤滑層係聚對二曱苯 (Paryfne)、碳化鶴碳膜(wc/c)、鑽石膜或類鑽碳膜。 藉由本發明，可以增進修整器修整晶圓研磨墊的效率及均勻 性，並使研磨墊的壽命延長，此外，本發明更可以增進化學機械 7 1290337 研磨製程的穩定性，減少修整時間，降低設備維修的次數及時間， 減少晶圓刮傷缺陷的產生，並因此增進晶圓的良率及產出。B 【實施方式】 現在將參照圖式來說明本發明之較佳實施例，其中相同的元 件將以相同的參考符號來加以說明。注意所述的本&明實施例僅 僅是用作於說明性，而非限制性，除非在實施例中有特別指 此種限制存在。Preferably, the trimming device for trimming the wafer polishing pad further comprises a lubricating layer, and the layer is composed of parylene, carbonized carbon film (wc/c), diamond film, and the lubricating layer can improve the row. Chip speed, reducing debris accumulation, and L, in addition, the present invention provides a manufacturing method for trimming a wafer polishing pad, comprising: providing a substrate; forming a plurality of grooves on the surface of the substrate Filling the material in the plurality of grooves; placing a plurality of wires in the fixing material; and, the fixing material firmly fixing the plurality of abrasive grains and the substrate. The plurality of grooves are preferably arranged in a regular manner. The groove of the plurality of grooves preferably has a size of only one abrasive grain. The plurality of grooves are preferably bowl-shaped. The method for manufacturing the fixing material, the hardening of the plurality of wires in the plurality of grooves, and the method for manufacturing the finishing device further comprises: forming a lubricating layer on the substrate, the fixing material and the plurality of abrasive grains Above. The lubricating layer is a poly(paryfene), a carbonized crane carbon film (wc/c), a diamond film or a diamond-like carbon film. The invention can improve the efficiency and uniformity of the dresser to trim the wafer polishing pad and prolong the life of the polishing pad. In addition, the invention can improve the stability of the chemical mechanical 7 1290337 polishing process, reduce the dressing time and reduce the equipment. The number and timing of repairs, reducing the occurrence of wafer scratch defects and thus increasing wafer yield and output. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described with reference to the drawings, in which the same elements will be described with the same reference numerals. It is to be understood that the present invention is intended to be illustrative, and not restrictive,

參照圖2，圖2顯示如本發明第一實施例之修整器的侧面圖， 其中以固著材料12將磨粒13固著在基板1丨上複數個平底碗形的凹 槽14中，在此實施例中，基板不銹鋼sus 316，磨粒尺寸是1〇〇 至250 // m，較佳是130至200// m，凹槽η的深度是5〇 #m，然而凹 槽14的深度是可以依磨粒的尺寸與所需磨粒外露的程度而調整變 化，凹槽14的孔徑大小設計成僅能容納一顆磨粒，使得磨粒可以 依照凹槽14的位置均勻分佈。凹槽14是一平底碗形，能夠在結構 上更為穩固地固著磨粒13，使得磨粒更不容易脫落。 々接著參照圖3來說明如本發明第二實施例，圖3顯示如本發明 第二實施例之修整器的侧面圖，此實施例的修整器是在如上述第 一實施例之修整器上更沉積一層潤滑層15。潤滑層15可以是鑽 石、類鑽碳、聚對二曱苯(Parylene)、碳化鎢碳膜(WC/C),較佳的 是聚對二甲苯(Parylene)、碳化鎢碳膜(WC/q。潤滑層不但可以耐 酸鹼以適應不同製程條件的考驗，更可以填補修整器表面的缺 陷，使得修整器表面更為平穩滑順，增加排屑速度，如此一來， 在進行化學機械研磨時，減少因為表面缺陷造成受力不平均而導 致磨粒脫落或是部分尖角碎裂的情形發生，因此減少晶圓刮傷的 產生。 接著參照圖4來說明如本發明第三實施例，圖4顯示如本發明 第三實施例之修整器的侧面圖，此實施例的修整器是在將上述第 一實施例之修整器的平底碗形凹槽14變更為筒形。 8 1290337 修整器是月第施例之修整器的側面圖，此實施例的 錐Ϊ疋在將上4弟一實施例之修整器的平底碗形凹槽Μ變更為 形狀述各實施例之形狀’其他各種 顯示發明修整器的製造方法，圖6碰 的圖ί=，織在基板11上形成-光阻層％，再以預先定 光阻Ϊ16:，曝光姑顯影光阻層16，得到一形成有圖案的 上形成碗_槽14’賴侧綠在基板11 12填充到凹㈣φ層然後如圖6D，將固著材料 並進行真^焊卿絲13置放在_材料12中， 侷限於二，，的1法中’形成上述凹槽的方法’並不 或其他；式:1，可以採用雷射鑿蝕(LaserDri11)、電鑄(Galvono) 性而方式敘述說明，應了解上述之說明僅是描述 ⑽職入增請專利範圍 【圖式簡單說明】 圖1顯示一習知修整器的侧面圖； ί2顯示如本發明第一實施例之修整器的侧面圖 固3 ,.、、員示如本赉明弟一實施例之修整器的側面圖 =4顯示如本發明第三實施例之修整器的側面圖 =5顯示如本發明第四實施例之修整器的側面圖， Θ 6Α-6Ε顯示如本發明第一實施例之修整器的製造方法 9 1290337 【主要元件符號說明】 1基板 2焊料層 3磨粒 5類鑽碳 11基板 12固著材料 13磨粒 14凹槽 14a凹槽 14b凹槽 15潤滑層 16光阻層 16a有圖案的光阻層Referring to Figure 2, there is shown a side view of a dresser according to a first embodiment of the present invention, wherein the abrasive particles 13 are fixed to the plurality of flat-bottomed bowl-shaped recesses 14 on the substrate 1 by the fixing material 12. In this embodiment, the substrate stainless steel sus 316 has an abrasive grain size of 1 〇〇 to 250 // m, preferably 130 to 200 // m, and the depth of the groove η is 5 〇 #m, but the depth of the groove 14 It is possible to adjust the change depending on the size of the abrasive particles and the extent to which the desired abrasive particles are exposed. The pore size of the groove 14 is designed to accommodate only one abrasive grain, so that the abrasive particles can be uniformly distributed according to the position of the groove 14. The groove 14 is in the form of a flat bottom bowl, which is capable of more firmly fixing the abrasive grains 13 in the structure, so that the abrasive grains are less likely to fall off. Next, a second embodiment of the present invention will be described with reference to FIG. 3, which shows a side view of a dresser according to a second embodiment of the present invention. The dresser of this embodiment is on the dresser as in the first embodiment described above. A layer of lubricating layer 15 is deposited. The lubricating layer 15 may be diamond, diamond-like carbon, Parylene, tungsten carbide carbon film (WC/C), preferably parylene, tungsten carbide carbon film (WC/q) The lubricating layer can not only resist acid and alkali to adapt to different process conditions, but also fill the defects of the surface of the dresser, making the surface of the dresser smoother and smoother, increasing the speed of chip removal, thus, when performing chemical mechanical polishing. Reducing the occurrence of abrasive grain detachment or partial sharp corner rupture due to uneven force caused by surface defects, thereby reducing the occurrence of wafer scratches. Next, a third embodiment of the present invention will be described with reference to FIG. 4 shows a side view of a dresser according to a third embodiment of the present invention, the dresser of this embodiment is formed by changing the flat bottom bowl-shaped recess 14 of the above-described first embodiment into a cylindrical shape. 8 1290337 The dresser is In the side view of the dresser of the first embodiment, the tapered bowl of this embodiment is changed to the shape of each embodiment of the flat bottom bowl groove 修 of the dresser of the first embodiment. Dresser manufacturing method, diagram 6 的 = , , 织 织 织 织 织 织 织 织 织 织 织 织 织 织 织 织 织 织 织 织 织 织 织 织 织 织 织 织 织 织 织 织 织 织 织 织 织 织 织 织 织 织 ί ί ί ί ί Green is filled in the concave (four) φ layer on the substrate 11 12 and then as shown in Fig. 6D, the fixing material is placed in the _ material 12, and is limited to two, in the method of forming the above groove The method 'is not or other; formula: 1, can be described by laser erosion (LaserDri11), electroforming (Galvono), and the description should be understood that the above description is only the description (10) BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a side view showing a conventional dresser; FIG. 1 is a side view of a trimmer according to a first embodiment of the present invention, and is a trimmer of an embodiment of the present invention. Side view = 4 shows a side view of a dresser according to a third embodiment of the present invention = 5 shows a side view of a dresser according to a fourth embodiment of the present invention, and Θ 6Α-6Ε shows a dresser according to a first embodiment of the present invention Manufacturing method 9 1290337 [Description of main component symbols] 1 substrate 2 solder layer 3 abrasive grain 5 type drill carbon 11 Substrate 12 fixing material 13 abrasive grain 14 groove 14a groove 14b groove 15 lubricating layer 16 photoresist layer 16a patterned photoresist layer

Claims (1)

1290337 十、申請專利範固·· L種修整晶圓研磨墊的修整器，包含·· 二$ ’在該基板之上表面具有複數個凹槽； α者材料，充填在該複數個凹槽中；以及 槽中複數個絲，該複數個磨粒被_著材翻著在該複數個凹 修整邮研料雜整器，其中該複數 咖，其+麵 個®研細細，其中該複數 ®研磨籠_’其中該固著 6如申社專利亥後數個磨粒與該複數個凹槽。 滑層申叫專乾圍苐1項之修整晶圓研磨墊的修整器，更包含-潤 圍胸之修整晶圓研磨㈣修整器，其中該潤滑 層化第6項之修整晶圓研磨墊的修整器，其中該潤滑 ，晴11修細81研磨塾，該 提供一基板； 在該基板之上表面形成複數個凹槽； 充填固著材料在該複數個凹槽中； 置放複數個磨粒在該固著材料中；以及 in 穩固地固著該複數個磨粒與該基板。 槽係依規圍第9項之健11賴造絲，其中該複數個凹 1290337 11. 如申請專利範圍第9項之修整器的製造方法，复 槽之每一個凹槽尺寸僅能容納一顆磨粒。 /、τ成啜數個凹 12. 如申請專利範圍第9項之修整器的製造方法， 槽是平底碗形、錐形或筒形。 ^ 數個凹 13. 如申請專利範圍第9項之修整器的製造方法， 係以硬焊方式固著該複數個磨粒與該複數個凹槽〔、〜固著材料 Η.::、請專利範圍第9項之修整器的製造方法：更 15. 、=____上面。 聚對二甲i軌圍第14項之修整器的製造方法，其中該潤滑層係 碳化鶴專利㈣第14項之修㈣的製造方法，其巾該潤滑層係 ㈣t細複數 十 圖式： 121290337 X. Patent application Fan Gu·· L type trimming wafer polishing pad trimmer, including two · ' on the surface of the substrate has a plurality of grooves; α material, filled in the plurality of grooves And a plurality of wires in the trough, the plurality of abrasive grains being turned over in the plurality of concave trimming and post-feeding materials, wherein the plurality of coffees, the +-faces are finely ground, wherein the plural number Grinding cage _' wherein the fixing 6 is a plurality of abrasive grains and a plurality of grooves after the patent. The sliding layer is called a special-purpose cofferdam for trimming the wafer polishing pad, and further includes a trimming wafer polishing (four) trimmer, wherein the lubricating layering of the sixth finishing wafer polishing pad a dresser, wherein the lubricating, fine 11 is trimmed 81, and the substrate is provided; a plurality of grooves are formed on the upper surface of the substrate; the fixing material is filled in the plurality of grooves; and the plurality of abrasive grains are placed In the fixing material; and in firmly fixing the plurality of abrasive grains and the substrate. The trough is according to the ninth item of the ninth ray, wherein the plurality of recesses 1290337. 11. The manufacturing method of the dresser of claim 9 is that the size of each groove of the double groove can only accommodate one Abrasive grain. /, τ becomes a plurality of concaves 12. As in the manufacturing method of the dresser of claim 9, the groove is a flat bottom bowl shape, a cone shape or a cylindrical shape. ^ Several recesses 13. The manufacturing method of the dresser of claim 9 is to fix the plurality of abrasive grains and the plurality of grooves by means of brazing [, ~ fixing material Η.::, please The manufacturing method of the dresser of the ninth patent range: more 15., =____ above. The manufacturing method of the trimmer of the 14th item of the poly-p-i-i rail circumference, wherein the lubricating layer is a manufacturing method of the repairing method (4) of the carbonized crane patent (4), the lubricating layer is (4) t fine tens of figures: 12
TW094126964A 2005-08-09 2005-08-09 Pad conditioner for conditioning a CMP pad and method of making the same TWI290337B (en)

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JP2006038891A JP2007044863A (en) 2005-08-09 2006-02-16 Conditioner for wafer polishing pad and its manufacturing method

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI451942B (en) * 2010-09-21 2014-09-11 Ritedia Corp Superabrasive tools having substantially leveled particle tips and associated methods

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110073094A1 (en) * 2009-09-28 2011-03-31 3M Innovative Properties Company Abrasive article with solid core and methods of making the same
US9254548B2 (en) 2012-04-25 2016-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming diamond conditioners for CMP process
CN203390712U (en) * 2013-04-08 2014-01-15 宋健民 Chemical mechanical polishing dresser
ES2756849T3 (en) * 2013-08-07 2020-04-27 Reishauer Ag Grinding tool and manufacturing procedure
TW201600242A (en) * 2014-06-18 2016-01-01 Kinik Co Polishing pad conditioner
JP6718868B2 (en) * 2014-10-21 2020-07-08 スリーエム イノベイティブ プロパティズ カンパニー Abrasive preform, method of making an abrasive article, and bonded abrasive article
JP6453666B2 (en) * 2015-02-20 2019-01-16 東芝メモリ株式会社 Manufacturing method of polishing pad dresser
KR102013386B1 (en) * 2018-01-29 2019-08-22 새솔다이아몬드공업 주식회사 Manufacturing method of pad conditioner by reverse plating and pad conditioner thereof
EP3774180A4 (en) * 2018-03-30 2021-12-29 Saint-gobain Abrasives, Inc Abrasive article including a coating
JP2020199598A (en) * 2019-06-11 2020-12-17 島根県 Manufacturing method for tool for cutting or grinding
CN116065217A (en) * 2022-12-26 2023-05-05 吉姆西半导体科技（无锡）有限公司 Preparation method of polishing pad finisher for CMP and polishing pad modulator

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56139875A (en) * 1980-03-31 1981-10-31 Toshiba Corp Manufacturing method of diamond wheel
US4925457B1 (en) * 1989-01-30 1995-09-26 Ultimate Abrasive Syst Inc Method for making an abrasive tool
ZA9410384B (en) * 1994-04-08 1996-02-01 Ultimate Abrasive Syst Inc Method for making powder preform and abrasive articles made therefrom
US5511718A (en) * 1994-11-04 1996-04-30 Abrasive Technology, Inc. Process for making monolayer superabrasive tools
JP2896657B2 (en) * 1996-06-28 1999-05-31 旭ダイヤモンド工業株式会社 Dresser and manufacturing method thereof
WO1998016347A1 (en) * 1996-10-15 1998-04-23 Nippon Steel Corporation Semiconductor substrate polishing pad dresser, method of manufacturing the same, and chemicomechanical polishing method using the same dresser
US6039641A (en) * 1997-04-04 2000-03-21 Sung; Chien-Min Brazed diamond tools by infiltration
US6679243B2 (en) * 1997-04-04 2004-01-20 Chien-Min Sung Brazed diamond tools and methods for making
US6286498B1 (en) * 1997-04-04 2001-09-11 Chien-Min Sung Metal bond diamond tools that contain uniform or patterned distribution of diamond grits and method of manufacture thereof
US6368198B1 (en) * 1999-11-22 2002-04-09 Kinik Company Diamond grid CMP pad dresser
JP3052896B2 (en) * 1997-06-13 2000-06-19 日本電気株式会社 Dress jig on polishing cloth surface and method of manufacturing the same
US5921856A (en) * 1997-07-10 1999-07-13 Sp3, Inc. CVD diamond coated substrate for polishing pad conditioning head and method for making same
US6123612A (en) * 1998-04-15 2000-09-26 3M Innovative Properties Company Corrosion resistant abrasive article and method of making
JP3295888B2 (en) * 1998-04-22 2002-06-24 株式会社藤森技術研究所 Polishing dresser for polishing machine of chemical machine polisher
KR19990081117A (en) * 1998-04-25 1999-11-15 윤종용 CMP Pad Conditioning Disc and Conditioner, Manufacturing Method, Regeneration Method and Cleaning Method of the Disc
JP2000106353A (en) * 1998-07-31 2000-04-11 Nippon Steel Corp Dresser for polishing cloth for semiconductor substrate
JP3387858B2 (en) * 1999-08-25 2003-03-17 理化学研究所 Polishing pad conditioner
US6419574B1 (en) * 1999-09-01 2002-07-16 Mitsubishi Materials Corporation Abrasive tool with metal binder phase
US6281129B1 (en) * 1999-09-20 2001-08-28 Agere Systems Guardian Corp. Corrosion-resistant polishing pad conditioner
TW412461B (en) * 1999-09-29 2000-11-21 Kinik Co Diamond disk for trimming wafer polishing pad and method for making the same
US6439986B1 (en) * 1999-10-12 2002-08-27 Hunatech Co., Ltd. Conditioner for polishing pad and method for manufacturing the same
US6325709B1 (en) * 1999-11-18 2001-12-04 Chartered Semiconductor Manufacturing Ltd Rounded surface for the pad conditioner using high temperature brazing
US7201645B2 (en) * 1999-11-22 2007-04-10 Chien-Min Sung Contoured CMP pad dresser and associated methods
KR100360669B1 (en) * 2000-02-10 2002-11-18 이화다이아몬드공업 주식회사 Abrasive dressing tool and manufac ture method of abrasive dressing tool
JP2001232570A (en) * 2000-02-23 2001-08-28 World Metal:Kk Electrodeposition tool and manufacturing method thereof
US6517424B2 (en) * 2000-03-10 2003-02-11 Abrasive Technology, Inc. Protective coatings for CMP conditioning disk
NZ523260A (en) * 2000-06-02 2005-10-28 Quality Metric Method and system for health assessment and monitoring
US6500054B1 (en) * 2000-06-08 2002-12-31 International Business Machines Corporation Chemical-mechanical polishing pad conditioner
US6776699B2 (en) * 2000-08-14 2004-08-17 3M Innovative Properties Company Abrasive pad for CMP
US6551176B1 (en) * 2000-10-05 2003-04-22 Applied Materials, Inc. Pad conditioning disk
US6669745B2 (en) * 2001-02-21 2003-12-30 3M Innovative Properties Company Abrasive article with optimally oriented abrasive particles and method of making the same
JP4508514B2 (en) * 2001-03-02 2010-07-21 旭ダイヤモンド工業株式会社 CMP conditioner and method of manufacturing the same
US6632127B1 (en) * 2001-03-07 2003-10-14 Jerry W. Zimmer Fixed abrasive planarization pad conditioner incorporating chemical vapor deposited polycrystalline diamond and method for making same
JP2003080457A (en) * 2001-09-07 2003-03-18 Ebara Corp Cutting tool and manufacturing method therefor
JP3984962B2 (en) * 2003-02-14 2007-10-03 株式会社ポータ工業 Piercing
JP2004358640A (en) * 2003-06-09 2004-12-24 Goei Seisakusho:Kk Method for manufacturing electroplated tool and electroplated tool
US6951509B1 (en) * 2004-03-09 2005-10-04 3M Innovative Properties Company Undulated pad conditioner and method of using same
US20050260939A1 (en) * 2004-05-18 2005-11-24 Saint-Gobain Abrasives, Inc. Brazed diamond dressing tool

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI451942B (en) * 2010-09-21 2014-09-11 Ritedia Corp Superabrasive tools having substantially leveled particle tips and associated methods

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