200821092 九、發明說明： 【發明所屬之技術領域】 本發明Λ施例大體上有關於一種用來修整電化學 處理系統中之研磨表面的方法與設備。 化學機械處理(ECMP)是一種經常用來製造 路的製程。ECMP係、利用電化學溶解作用， 統化學機械研磨製程(CMP)要小的機械研磨 材表面的導電材料。藉著在電極與基材表面 來執行電化學溶解作用，而將基材I面：導 溶解至周遭的電解溶液中。*反轉偏 機械處理製程也可用來在基材一 ΛΑ 上也積材料。 的研磨結果，研磨墊的表面必須 Θ疋期修整， 積在研磨塾表面上的研磨副產物， 久/或因研 而需定期再生該墊表面。通常 φ呎用由鑽石 整盤來修整研磨墊的研磨表面。 整盤連接至一修整頭，而該修整頭可、 面上移動。修整頭會下降與一旋轎由 ^ 且與該研磨表面作相對旋轉。修整 名 A & 乂續通常奋 研磨表面，以允許修整盤對研磨塾 曰 的研磨表 於CMP系統中的某些修整盤含右π $ S有不連續的 些鑽石顆粒以磨砂或塗層般的形式勺 L埋或粘 機械 電 積體電 用比傳 移除基 加偏壓 移除並 電化學 到期望 任何累 料磨損 成的修 修 研磨表 觸，並 轉中的 整修。 用 粒，該 密度 時使 ，來 間施 材料 ，則 了達 移除 墊材 所製 塾的 面接 掠旋 進行 石顆 在修 6 200821092 整盤上。 用於表面上的鑽石顆粒尺寸通常介於數微米 之間，並且依據鑽石的種類可選擇具有相似的形 形狀的組合。隨後將這些鑽石顆粒以受控制的方 該盤上，而產生一不規則且粗糙的修整表面，該 係用於修整過程中作用在CMP研磨墊部分上，」 研磨墊多個部分進行加工使之具有紋理結構。對 習知修整盤，則使用諸如化學氣相沉積與雷射沉 製程將鑽石顆粒沉積在基板上。這些習知的修整 計用來提供高切削速率，而適合用來修整CMP研 硬介電表面。相反地，ECMP研磨墊的研磨表面t 程中所使用的介電研磨墊要軟且較脆弱。例如， 磨墊可能具有一導電表面，或是在選定的研磨表 多個導電元件或導電區域，以避免刮傷或損害正 的軟質材料，例如銅材料。該些導電區域可能是 將錫（tin)及/或鎳（Ni)等導電顆粒佈置在聚合物 而形成之。因此，習知CMP修整盤與修整方法對 修較軟且較脆弱的ECMP研磨墊而言，通常太過 成ECMP研磨墊表面損傷，從而需要提早更換研 如，激烈的修整可能改變導電區域的電阻、導致 以及降低對製程控制。激烈的修整製程亦可能使 電顆粒呈現粗糙狀況，導致刮傷正接受處理的基 是在基材表面上造成其他損傷。只簡單地減慢修 度以在 ECMP墊的研磨表面上產生可接受之粗 至數毫米 狀或多種 式粘著至 修整表面 氣對CMP 於另一型 積等沉積 盤典型設 磨墊的堅 匕CMP製 ECMP 研 面上具有 進行研磨 利用諸如 粘結劑中 於用來整 激烈而造 磨塾。例 製程變異 部分的導 材表面或 整切削速 糙度的方 7 200821092 式，是不可行的方法。因為，此方法必然提高修整時間， 因而造成無法接受的產量縮減。 因此，為了使ECMP系統更具產值，在修整ECMP研 磨墊之研磨表面以避免鑿擊或損害研磨材料的技術上，有 著相當大的技術難關等待克服。一但研磨材料損傷，就必 需丟棄該研磨材料，也就是不能再用來研磨，以避免因為 損害待處理基材而減少每單位研磨材料量所能研磨的基材 數目，進而降低系統產能且提高成本。 因此，需要一種用來修整ECMP研磨墊之研磨表面的 改良修整元件以及修整方法。 【發明内容】 本發明揭示數種用來修整電化學機械研磨電的墊修整 器實施例。在一實施例中，描述一種用來修整具有導電研 磨表面的研磨器。研磨墊修整器包含一背板與一環形件， 該背板係用以連接至一修整頭組件。該背板包含一硬盤， 該硬盤具有一第一側與一位於相反面的第二側，該第二側 與該背板的中心線呈垂直；該環形件具有一基部，該基部 附著於該背板的第二側，其中該環形件定義出一位於該第 二側對面的修整表面，該修整表面相對於該第二側的平面 呈徑向傾斜狀。 在另一實施例中，揭示一種用來修整具有導電研磨表 面的研磨器。該塾修整器包含一背板、一環形件與一修整 表面，該背板用以連接至一修整頭組件；該背板包含一硬 8 200821092 盤，該硬盤具有一第一側以及一位於相反面的第二側，該 第二側與該背板的中心線呈垂直；該環形件具有一基部， 該基部附著於該背板的第二側，該環形件在中心處的截面 厚度比邊緣處的截面厚度要厚；該修整表面設置於該環形 件上並且與該基部相對，在該修整表面上具有多個角錐狀 結構。 在另一實施例中描述一種用來修整具有導電研磨表面 之研磨墊的墊修整器。該墊修整器包含一背板、一環形件 與一修整表面，該背板用以連接至一修整頭組件；該背板 包含一硬盤，該硬盤具有一第一側以及一位於相反面的第 二側，該第二側垂直於該背板的中心線；該環形件具有一 基部，該基部同中心地附著於該背板的第二側；以及，該 修整表面設置於該環形件上並且與該基部相對，在該修整 表面上具有多個相鄰的角錐狀結構，其中該修整表面相對 於該背板第二側的平面而言具有一徑向斜率。 【實施方式】 本文中揭示多種有關於修整盤的實施例，該等修整盤 係用來修整（包括刻劃及/或整治）電化學機械研磨製程 (ECMP)中所用研磨墊的研磨表面。更明確而言，該修整盤 適用以修整該些具有脆弱導電表面的處理墊，這類處理墊 通常用於ECMP系統中。該新穎的墊修整器包含一環形主 體，該環形主體設置在一背板上。該背板適用以連接至一 修整頭組件，用以推擠該墊修整器使其抵靠著該研磨墊的 9 200821092 研磨表面。該環开$ φ挪 衣办主體包含一多晶鑽石覆蓋層或塗層，當 該覆|層’塗層與研磨表面接觸時，彳用以復原(refresh)、 刻剑（scoring)或修整該研磨表面。在某些實施例中，該多 曰曰鑽石覆I層經過加工，而具有多個能修整該研磨墊之研 磨表面的Λ貝相同結構。該等結構的尺寸、高度與間距 (PitCh)受到控制且具有堅固的耐性（tight t〇lerances)，以增 進切削率（cut rate)，卻不會不利地增加研磨墊表面的表面 粗輪度並且此避免諸如金屬顆粒及/或從研磨表面用盡及 /或扯落的部份研麼矣& & ^ ^ 所磨表面專研磨副產物累積或堵塞。 第1圖為處理系統實施例1 00之一部分的上視圖，該 處理系、'先1 0 0具有—墊修整器實施例丨丨〇，該修整器Η 〇 設置在-修整裝置115上。在一實施例中，該系統ι〇〇設 十用X平：化或研磨一半導體基材，且通常包含一研磨模 組1〇8，該研磨模組108内設置有一或多個研磨機台 120Α-120Β。每個研磨機台12〇A-12〇c包含—平台13〇， 該平台支撐著一研磨材料125。在處理過程中，藉由一基 材承载頭1 24來推擠一基材，使該基材抵靠著研磨材料 125,並且平台130會旋轉，以在基材與研磨材料125之間 提供至少一部分的相對研磨運動。可受益於本文中所述實 施例的處理系、统包括可購自美國加州聖克拉拉市應用材料 公司的REFLEXION LK ECMPtm研磨系統，當然其他研磨 系統亦可應用文中所述實施例。 在各個研磨機台iSOA-UOC的鄰近處設置該修整裝置 115，並且該修整裝置115係適用來修整位在各個平台 10 200821092 上的研磨材料125。如第1圖所示，每個修整裝置115可 在避開平台1 3 0與研磨材料 1 2 5的位置以及在研磨機台 120B與120C上之研磨材料125上的修整位置之間移動。 在修整位置内時，該修整裝置1 1 5選擇性地與該研磨材料 1 2 5接合，而作用於該研磨材料1 2 5的表面上，以使該研 磨材料1 2 5的表面達到能夠產生所欲研磨結果的狀態。修 整裝置1 1 5可能相對於研磨材料1 2 5進行掃掠及/或旋轉動 作，在修整期間，修整裝置1 1 5可能額外地在平台1 3 0上 旋轉。可藉著設備操作者手動輸入或透過一控制器回應該 製程配方等方式來控制修整製程的運作。以兩者擇一或是 結合使用的方式，使用位於系統1 0 〇遠端的獨立修整設備 (未示出）來修整研磨材料1 2 5。 研磨材料1 2 5包含一至少部分導電的研磨表面。研磨 材料1 2 5的範例包括由介電材料與導電材料所組成的組合 物。在一實施例中，研磨材料1 2 5可能包含其内設置有多 個導電元件的介電或導電材料。該等導電元件可能是小薄 片、顆粒等物，並且設置在一介電或導電材料中，例如設 置在一聚合物材料中。可用來作為導電元件及/或導電材料 的導電材料範例包括銅、碳系材料（Carbon-based material)、金、翻、銀、錫、鋅、鎳、钻以及其組合物， 或是可抵抗研磨化學物質的其他導電材料。碳系材料包含 碳黑（carbon black)、石墨與碳顆粒。導電性碳系材料的範 例包括碳粉、碳纖維、碳奈米管、碳奈米泡沫、碳奈米氣 凝膠（carbon aerogels)、石墨以及上述材料的組合物。在一 11 200821092 實施例中，導電研磨奸# 所厲材枓可能包含導電箔、内含倒店材料 的聚合物#料、邋雷姐1 # Λ ¥電網、導電薄片、導電纖維或由導電纖 維織成的織物。導雷奸祖 分¥材科、纖維或織物可設置在聚合物材 料中。 第2圖為第1圖之修 ^登裝置115的截面圖，其顯示塾 修整益1 1 0的實施例。塾修 σ〇 μ f Κ态1 1 〇 έ又置在研磨材料1 2 5 的上方。修整裝置1 1 S、s a & 通吊包含一修整頭組件202，其透 過一手臂206而連接至一* 支撐件204。支撐件204貫穿該 研磨模組1 0 8的某应而 < 班 座而故置。在該基座與支撐件204之間 具有多個轴承，以采丨I协± _ 於支撐件204進行旋轉。致動器210 連接在該基座與該支揮件之μ，以控制該支撐件⑽的旋 轉位向。致動件21Q可令從該支料延伸出的手臂2〇6繞 著支#件204而旋鳇， 轉 口此可相對於該研磨機台1 2 6 Α來 側向定位該修整頭組件202。通常藉著加壓或排空一設置 在該t整頭組件202内且部分由一隔膜圈圍出來的可擴張 空腔290來控制該修整裝置115及/或修整頭205的高度。 “墊〇整态1 1 0連接致該修整頭組件2 0 2，並且可選 擇陡地抵罪著該研磨材料i 2 5，同時旋轉以修整該研磨材 料12 5。墊修整器1 1 0包含一背板與一修整表面。該背板 及/或修整表面典型為圓形、盤形或環形，以利於墊修整器 1 1 〇旋轉’並且增進研磨材料丨2 5的修整作用及/獲控制修 整製程。 在此實施例中，研磨材料1 2 5包含一研磨墊，該研磨 塾具有一第一導電材270與一第二導電層272，並且在該 12 200821092 第一與第二導電層之間以一絕緣層2 74隔開來。該第一導 電層270的作用如同電極且具有一研磨表面276，該研磨 表面276可如上所述般至少部分導電並且在研磨製程中接 觸一基材。一導電載體（conductive carrier)278可設置在該 第一導電層270與該絕緣層274之間，以爲該第一導電層 270提供額外的支撐。導電載體278可如上所述般地是一 網子、布料、織物》並且可塗覆有一導電材料。導電在體 的範例可以是由尼龍（nylon)所製成的網子或織物，並且塗 覆諸如金等導電材料。搞合至一電源（未示出）的末端（未示 出）可連接至該導電載體278與該第一導電層270其中一者 或兩者，以提供電壓至該第一導電層270。第二導電層272 則作為該第一導電層270的相反電極，且可包含一末端用 以耦接至該電源不同極。 該第一導電層270可能如上所述般是一内部包埋有多 個導電元件2 8 0的聚合物材料。在研磨期間，基材（未示出） 抵靠著該研磨材料1 2 5，且第一導電層2 7 0電性連通至沉 基在該基材表面上的導電材料。該第一導電層270及/或該 基材上的導電材料會透過供應至該研磨材料125表面上的 電解液而與該第二導電層272電性連通。在一實施例中， 電解液（electrolyte)流經多個開口 282，該等開口 282至少 貫穿一部分的研磨材料直至該第二導電層272的上表面。 當平台130與基材其中一者或兩者進行旋轉時，會藉由電 化學與機械力來移除基材表面上的導電材料。 在研磨製程之前、之間或之後，可能需要修整研磨表 13 200821092 面2 7 6的墊研磨表面，以保持預定的處理結果。修整製程 可能創造、改造及/或清潔該研磨表面2 7 6中的溝槽及/粗 糙處。在另一應用中，修整該研磨表面276以更新該研磨 表面 276。更新（refreshing)步驟可能包含至少一個下列動 作：暴露出研磨表面2 7 6上的新或未使用材料、移除研磨 副產物、移除用盡及/或扯落的部份研磨表面 2 7 6以及/或 移除或減少沉積在研磨表面276之表面中或表面上的氧化 物。可在使用新研磨墊進行研磨之前先修整研磨表面 2 7 6，也可在研磨處理過程中修整研磨表面2 7 6，以維持及 /或提升研磨表面 276的表面粗糙度與移除速率；或者在 研磨處理之後，修整研磨表面2 7 6，以調整該研磨表面2 7 6 準備研磨新的基材。 第3 A與3 B圖分別顯示墊修整器1 1 0之實施例的分解 截面圖與下視圖。在一實施例中，墊修整器1 1 〇包含一環 形件3 1 0，其設置在一背板或背盤3 0 5上，而該背板連接 至修整頭 2 5 0。該背板 3 0 5連接至一修整頭組件（見第 2 圖）。背板305包含一第一表面317，該第一表面317連接 至該修整頭250的表面316。背板305亦包含一第二表面 318，其位於該第一表面 317的相反側。該第一表面 317 與第二表面318至少其中一者設置在與該背板305之中心 線3 3 0正交的平面中。在第3 A與3 B圖所繪的實施例中， 環形件3 1 0同心地連接至該背板3 0 5，並且該背板3 0 5同 心地連接至該修整頭2 5 0。環形件3 1 0的一尺寸（例如直徑） 小於該背板3 0 5的尺寸，並且該背板3 0 5之第二表面3 1 8 14 200821092 的多個部分暴露出來，例如外部分3 0 6與内部分3 0 4。在 一實施例中，背板的尺寸延伸超過該環形件3 1 0尺寸而超 出一外部分。雖然本文中所述與繪示的環形件3 1 0呈輪狀 或環狀，然而環形件3 1 0也可以是不具有内徑的實心盤或 實心板。 在一實施例中，背板3 0 5包含一堅固材料，例如陶瓷 或金屬，如不鏽鋼、紹或其他金屬等。背板305的第一表 面317適用以緊靠著該修整頭250的表面317。在背板305 中形成有多個開口 3 1 9，以便於將背板3 0 5連接至修整頭 250 ° 開口 319可用以接收多個準銷（alignment pins)或固定 件（未示出），該等準銷或固定件可與配對孔3 22及/或3 24 耦合。在一實施例中，該等配對孔3 2 2與3 24至少其中一 者包含螺紋孔（f e m a 1 e t h r e a d)。例如，背板3 0 5可能具有 一或多個開口 3 1 9形成於該位部分3 0 6中，以便於藉由諸 如螺絲釘、螺栓、插銷等固定件來連接至該修整頭 25 0。 在第3 A-3B圖所繪的實施例中，沿著修整頭250的外徑形 成四個螺紋孔3 24。此外，可在背板3 0 5中形成一或多個 開孔（未顯示），用來與從該修整頭2 5 0延伸出的特徵相匹 配，例如與從該修整頭2 5 0延伸出的定位銷相匹配。 環形件2 1 0通常包含一環形主體3 2 0以及一形成於該 環形主體3 2 0上的修整表面3 1 5。在一替代實施例中（未顯 示），環形主體3 2 0可以是一實心平坦圓柱狀件，並且其上 設置有一修整表面3 1 5。環形主體3 2 0包含碳化物材料， 15 200821092 例如碳化鎢，且該環形主體3 2 0耦接至該背板3 0 5的 表面3 1 8。可藉由黏著劑，例如使用環氧化物材料或 適當的黏著材料，將環形主體3 2 0黏附至背板3 0 5。 實施例中，環形件3 1 0的厚度約2.0毫米（mm)至約3 米，並且該修整表面315的厚度大於或等於約0.3毫 在一應用中，該環形件 3 10 之外徑與内徑的比例 1 . 8 4 :1。在一實施例中，背板 3 0 5内形成有一環形 3 2 6，並且該環形通道3 2 6係設計用來容納該環形主體 在一實施例中，環形件3 1 0相對於該背板3 0 5之 表面3 1 8的平面而言呈傾斜或凸出狀。舉例而言，環 3 1 0的中心處較厚，且徑向向外傾斜或彎曲（第3 A圖 向上傾斜），而使得其邊緣處的截面尺寸較薄。在一 中，環形主體3 20的中心較厚或者呈傾斜狀，使得形 該環形主體3 2 0上的修整表面3 1 5相對於該背板3 0 5 二表面 318 的平面而言呈現傾斜或凸出貌。在此實 中，形成於環形主體3 2 0上的修整表面3 1 5可能在整 形主體320上具有實質相等的截面厚度。在另一應用’ 示出），環形主體3 2 0可能在其中心處與邊緣處具有相 厚度，並且形成在環形主體3 20上的修整表面3 1 5則 加工而呈現中心較厚，使得修整表面3 1 5相對於該背相 之第二表面3 1 8的平面而言呈傾斜或凸出狀。 在一實施例中，環形件3 1 0包含一尺寸3 5 5，該 3 5 5包含從該環形件 3 1 0之中心部分至該邊緣部份 值。該尺寸3 5 5可能是約小於或等於5 0微米的線性 第二 其他 在一 .5毫 米。 約為 通道 320° 第二 形件 中呈 應用 成於 之第 施例 個環 t (未 同的 經過 i 305 尺寸 的差 差值 16 200821092 (linear delta)或曲狀差值（curved delta)，例如約小於或等 於40微米。此外，該環形主體320的邊緣（perimeter)可免 於接觸基材，以減小或避免在修整過程中因為接觸而損傷 研磨塾（未示出）的研磨表面。舉例而言，該環形主體的外 徑及/或内徑可呈傾斜、圓滑、去角狀，以圓滑（relieved) 該環形主體3 2 0之邊緣部份的邊。設置在環形主體上的修 整表面3 1 5則順應著該環形主體3 2 0的各個圓滑部分，以 避免或減少對研磨墊之研磨表面的傷害。 修整表面3 1 5包含一多晶鑽石塗層或膜層，該塗層中 具有多個結構3 5 0且其延伸出該塗層。在一實施例中，修 整表面315是由多晶鑽石塗層所形成，該鑽石塗層是藉著 在高溫高壓下熔化細緻的鑽石粉末來形成該單石鑽石塗 層。在一實施例中，將具有微米尺寸晶粒的鑽石粉末燒結 成該修整表面315。通常使用高於1300 °C的温度以及高於 5 Gpa的壓力來燒結該塗層。在一實施例中，使用熔融的 鈷有助於該熔化製程，而在該多晶鑽石表面中留下微量的 導電性鈷。在此實施例中，利用線切割放電加工（wire electromotive discharge，WEMD)來形成該些結構 350，以 產生具有不同尺寸、形狀與圖案的結構3 5 0。 背板3 0 5可為任意形狀，例如圓形、環形或盤狀。在 一實施例中，背板3 0 5的直徑介於約1 0 0微米至約1 1 0微 米之間，例如約1 0 8微米。背板3 0 5通常夠硬或夠堅固， 使其在處理條件下的屈曲情形減至最小。可藉由材料的選 擇與背板的厚度來決定背板3 0 5的堅固度。例如，背板可 17 200821092 由堅硬的材料所製成，且厚度介於約6微米至約7微米之 第3 C圖顯示第3 B圖之修整表面3 1 5的細部圖。修整 表面3 1 5包含多個結構3 5 0，該等結構3 5 0設計成具有高 一致性的幾何形狀，並且間隔地配置在整個修整表面 3 1 5 上。例如，該等結構3 5 0均勻地間隔設置在整個修整表面 315上。每個結構350具有一基底352與一尖端354。每個 結構3 5 0可能呈角錐狀、圓錐狀、多邊形或其他適當的形 狀。舉例而言，該等結構3 5 0可以是多邊形結構，例如三 邊或四邊形的長形物，或其組合。該等結構3 5 0可以如圖 所示般的格狀或X/Y圖案設置在整個修整表面315上，或 者該等結構3 5 0可採分組形式或採極性陣列等其他一致圖 案的形式而形成在整個修整表面3 1 5上。在其他實施例中 (未顯示），該等結構3 5 0的間隔方式（s p a c i n g)可設計成非 一致性的圖案。 在一實施例中，每個結構3 5 0包含具有四邊形基底3 5 2 的角錐形狀，但是該基底也可以是任意多邊形，例如三邊 或四邊以上。在此實施例中，每個結構3 5 0的基底3 5 2實 質呈矩形，其寬約介於0.1毫米至約〇 · 2毫米之間，例如 介於0.1 5毫米至約0.1 7毫米之間，或約為0 · 1 6毫米。除 了角錐狀以外，該等結構3 5 0也可採用其他形狀，例如立 方塊狀、三邊形長條狀、圓錐狀、截頭體（frustrums)、圓 柱體或上述形狀之組合。從該等結構3 5 0之尖端3 5 4之間 所量得的間隔或間距係介於約 4 5 0微米至約 5 5 0微米之 18 200821092 間，例如介於4 7 5微米制約5 2 5微米之間。在一應用中， 每個基底3 5 2與其他基底3 5 2相鄰，使得一結構3 5 0結束 之處也同時是令一結構350的起始處。 在一實施例中，結構3 5 0設計成多個切削邊緣（c u 11 i n g edges)，用以在修整期間於研磨墊之研磨表面 276(見第2 圖）中形成多個溝槽或渠道。該等結構高度與間隔的一致性 允許在研磨表面中刻劃出實質上具有一致深度的溝槽，並 且由於在該研磨表面中形成實質一致的粗糙處（asperities) 而能得到改善的研磨結果。此外，該等結構的形狀有利於 清除研磨副產物，而能夠在研磨表面上形成更一致的刻劃 深度與更一致的修整法。 背板3 0 5可以是任何形狀，例如圓形、環形或盤形。 在一實施例中，背板3 0 5的直徑介於1 0 0毫米至約1 1 0亳 米之間，例如約1 08毫米。背板3 05通常夠硬或夠堅固， 使其在處理條件下的屈曲情形減至最小。可藉由材料的選 擇與背板的厚度來決定背板3 0 5的堅固度。例如，背板可 由堅硬的材料所製成，且厚度介於約6微米至約7微米間。 第4 A圖為設置在環形主體3 20上之修整表面實施例 4 1 6 !的部分剖面圖。修整表面 4 1 6 1類似於上述修整表面 315。該修整表面416ι包含多個從一谷底或底面400延伸 而出的結構3 50，該底面400顯示該等相鄰結構3 50之間 的介面。在一實施例中，底面4 0 0係如第3 B與3 C圖中所 示般呈格子狀或X/Y圖案狀地位於整個修整表面3 1 5上， 並且在底面4 0 0處，一結構3 5 0結束時，另一結構3 5 0跟 19 200821092 著開始，而形成實質等距間隔且重複的圖案。 在此實施例中，該等結構3 5 0超出該底面400 「H」實質等高，並且以實質等距的圖案分佈於整 表面3 1 5上。在此實施例中，每個結構3 5 0實質等 如高度偏差介於約± 3 0微米之間。舉例而言，每個麵 的高度Η可能約1 7 0微米且偏差界在± 3 0微米之間 實施例中，任意兩相鄰尖端3 5 4之間的高度偏差小 於約3 0微米，例如小於或等於約2 5微米。 第4Β圖為設置在環形主體320上之修整表面 施例4 1 62的部分截面圖。修整表面4 1 62類似於上 表面315。修整表面4162包含多個結構350,該等麵 具有至少兩種高度。在此實施例中，一部分的結構 能具有類似於第4 Α圖中所述結構3 5 0般的第一高 其餘的結構3 5 0的高度約為該第一高度的一半。 第4C與4D圖為形成在修整表面4163與4164 中之結構3 5 0其他實施例的部分截面圖。在第4 C 施例中，結構3 5 0形成在修整表面4 1 6 3上，且具有 結構3 5 0相似的形狀。在此實施例中，在一重複圖 該等結構350具有第一高度、第二高度與第三高度 高度大於第二高度，並且第二高度大於第三高度。 一高度彼此間實質相等，第二高度與第三高度亦然 在修整表面41 63中形成一致圖案。在第4D圖所示 中，顯示出多個結構 3 5 0具有逐漸升高或逐漸下 的高度 個修整 南’例 r 構 3 5 0 。在一 於或等 另一實 述修整 『構3 5 0 3 50可 度，而 上或其 圖的實 與上述 案中的 。第一 每個第 。因此， 實施例 降的高 20 200821092 度，以創造出佈滿該修整表面4 1 64的多個尖端3 5 4。每個 高度（在此截面圖中出示13個高度）均低於最高結構350， 並且相鄰尖端3 5 4之間的每個高度變化值可實質相等。該 漸進式的高度可起始於修整表面41 64的外徑，並且向内向 下傾斜至該修整表面4 1 64的内徑，或者反之亦然。在此實 施例中，在橫跨整個環形主體 3 20寬度的修整表面 4 1 64 截面厚度實質相等。或者，在環形主體3 2 0内徑處的修整 表面4164之截面厚度可以較小，或者反之亦可行。第4E 圖顯示修整表面3 1 5另一實施例的部分細部截面圖。每個 結構350從谷底或底面400延伸至尖端354。從參考線425 算起，每個結構的每個相鄰側壁具有第一角度4 1 0與相鄰 角度420。在一實施例中，參考線425與該環形主體320 的上表面呈垂直。在一應用中，第一角度410與相鄰角度 420實質相等。舉例而言，該第一角度410與該相鄰角度 4 2 0約介於4 2至4 6度之間，例如約4 4度。在一實施例中， 定義出該底面400的第一角度410與相鄰角度420約介於 86至94度之間，例如約為88度。 雖然未顯示，但該等結構3 5 0中至少一部分結構3 5 0 在其尖端3 54處可以是平頭（flattened)的。更甚者，一部 分的平頭尖端3 5 4可呈溝紋狀、圓頭狀，或者在該結構3 5 0 的平頭尖端至側壁之間可具有一急劇轉折。此外，藉著將 該等結構3 5 0的基底3 5 2間隔開來而在其間留下一平面及/ 或溝渠，而在修整表面3 1 5中的該等結構3 5 0之間形成間 隔。 21 200821092 多晶鑽石表面非常耐用，而能抵抗修整過程中的結晶 破損及/或結晶移動（crystal dislodgment)情形。包含文中所 修整表面315的多晶鑽石膜層或塗層可經過機械加工，而 製造出結構及/或尖端尺寸、形狀及間距之任意配置方式與 組合。該等結構及/或尖端的高度可加以控制，而形成一致 或不一至的尺寸。也可根據幾何圖案以一致地間隔來組織 該等結構，或者以受控制但不一致的間隔來組織該等結 構。該等結構之形狀與高度的控制及一致性可經過選擇， 以在修整期間提供更多個結構接觸該研磨表面。此外，各 個結構3 5 0受到較小的機械應力，而得以延長墊修整器1 1 0 的壽命。該等結構3 5 0的頻率、間距、高度與形狀亦可加 以選擇，以使減少或消除諸如來自研磨表面1 2 5之導電元 件與其他物件之副產物的累積。如此可在研磨墊上產生高 再現性的刻劃或修整圖案。研磨電的修整製程因而夠加一 致，並且負載可更平均地分配在該等結構3 5 0上，進一步 延長墊修整器Π0的使用壽命。 同樣地，研磨墊之易碎研磨表面1 2 5的修整製程較不 激烈，並且在研磨表面1 2 5中創造出實質一致的粗糙度。 從而達到更長的研磨墊使用壽命。實驗結果亦顯示出使用 多晶鑽石塗層作為修整表面3 1 5，研磨墊之研磨材料的使 用壽命可增長兩倍。該等結構的間隔及/或尺寸能在研磨材 料上產生實質一致的刻痕與溝槽，從而在研磨材料上產生 實質一致的粗糙度。而讓研磨墊的壽命從可處理1 5 0 0個晶 圓提升到約3 0 0 0個晶圓，而使得替換研磨墊的次數減至最 22 200821092200821092 IX. Description of the Invention: [Technical Field of the Invention] Embodiments of the present invention generally relate to a method and apparatus for trimming an abrasive surface in an electrochemical processing system. Chemical mechanical processing (ECMP) is a process often used to make roads. The ECMP system utilizes electrochemical dissolution, and the chemical mechanical polishing process (CMP) is a conductive material on the surface of a mechanical abrasive. The substrate I surface is guided to dissolve in the surrounding electrolytic solution by performing electrochemical dissolution on the surface of the electrode and the substrate. * Reversed partial mechanical processing can also be used to build materials on a substrate. As a result of the grinding, the surface of the polishing pad must be trimmed periodically, and the grinding by-products accumulated on the surface of the polishing crucible need to be periodically regenerated from the surface of the pad. Usually φ呎 uses a diamond plate to trim the abrasive surface of the polishing pad. The entire plate is connected to a trimming head, and the trimming head can be moved on the surface. The trimming head will descend with a spinning car and rotate relative to the grinding surface. The trimming name A & continually grinds the surface to allow the dressing of the grinding disc to grind the enamel. Some trim discs in the CMP system contain right π $ S with discontinuous diamond particles to be frosted or coated. The form of the spoon L buried or viscous mechanically charged body is removed by using a biased removal base bias and electrochemically applied to any abrasive wear that is expected to wear into a repaired abrasive contact and is refurbished. When the density is used, the material is applied, and the surface of the mat is removed. The stone is removed on the whole plate. The size of the diamond particles used on the surface is usually between several micrometers, and a combination of similar shapes can be selected depending on the type of the diamond. These diamond particles are then applied to the disk as a controlled surface to create an irregular and rough finish surface that is applied to the CMP pad portion during the trimming process," Has a texture structure. For conventional conditioning discs, diamond particles are deposited on the substrate using, for example, chemical vapor deposition and laser deposition processes. These conventional trim gauges are used to provide high cutting rates and are suitable for trimming CMP hard dielectric surfaces. Conversely, the dielectric polishing pad used in the polishing surface of an ECMP polishing pad is soft and relatively fragile. For example, the sanding pad may have a conductive surface or a plurality of conductive elements or conductive areas on the selected polishing table to avoid scratching or damaging positive soft materials, such as copper materials. The conductive regions may be formed by disposing conductive particles such as tin and/or nickel (Ni) on the polymer. Therefore, the conventional CMP dressing disc and the trimming method are generally too soft and fragile for the ECMP polishing pad, and the surface of the ECMP polishing pad is usually too damaged, so that it is necessary to change the research early, and the intense dressing may change the resistance of the conductive region. , causing and reducing control of the process. The intense finishing process can also cause the electrical particles to assume a rough condition, causing the scratching of the substrate being treated to cause other damage on the surface of the substrate. Simply slow down the repair to produce an acceptable thickness of a few millimeters on the abrasive surface of the ECMP pad or a variety of adhesions to the surface of the dressing surface. The CMP ECMP grinding surface has been subjected to grinding using, for example, an adhesive for the purpose of intense grinding. In the case of the process variation part of the surface of the material or the entire cutting speed of the roughness of the method 7 200821092, is not feasible. Because this method inevitably increases the dressing time, resulting in an unacceptable reduction in production. Therefore, in order to make the ECMP system more productive, there is a considerable technical difficulty in overhauling the grinding surface of the ECMP grinding pad to avoid chiseling or damage to the abrasive material. Once the abrasive material is damaged, it is necessary to discard the abrasive material, that is, it can no longer be used for grinding to avoid reducing the number of substrates that can be ground per unit of abrasive material due to damage to the substrate to be treated, thereby reducing system throughput and improving cost. Accordingly, there is a need for an improved trim component and trim method for trimming the abrasive surface of an ECMP pad. SUMMARY OF THE INVENTION The present invention discloses several embodiments of pad conditioners for trimming electrochemical mechanical polishing. In one embodiment, a grinder for trimming a surface having an electrically conductive grinding surface is described. The pad dresser includes a backing plate and a ring member for attachment to a trim head assembly. The backboard includes a hard disk having a first side and a second side opposite to the opposite side, the second side being perpendicular to a centerline of the backboard; the ring having a base to which the base is attached a second side of the backing plate, wherein the annular member defines a trimming surface opposite the second side, the trimming surface being radially inclined relative to a plane of the second side. In another embodiment, a grinder for trimming a surface having a conductive finish is disclosed. The tamper includes a backing plate, a ring member and a finishing surface for connecting to a trimming head assembly; the backing plate includes a hard 8 200821092 disk having a first side and a reverse side a second side of the face, the second side being perpendicular to a centerline of the backing plate; the ring member having a base attached to the second side of the backing plate, the ring member having a section thickness at the center than the edge The section thickness is thick; the conditioning surface is disposed on the annular member and opposite the base, and has a plurality of pyramidal structures on the conditioning surface. In another embodiment, a pad conditioner for trimming a polishing pad having a conductive abrasive surface is described. The pad conditioner includes a back plate, a ring member and a trimming surface for connecting to a trimming head assembly; the back plate includes a hard disk having a first side and a first side opposite a second side, the second side being perpendicular to a centerline of the backing plate; the ring member having a base that is concentrically attached to the second side of the backing plate; and the trimming surface is disposed on the ring member and Opposite the base, there are a plurality of adjacent pyramidal structures on the conditioning surface, wherein the conditioning surface has a radial slope with respect to a plane of the second side of the backing plate. [Embodiment] Various embodiments relating to a conditioning disk for trimming (including scoring and/or rectifying) the abrasive surface of a polishing pad used in an electrochemical mechanical polishing process (ECMP) are disclosed herein. More specifically, the conditioning disk is adapted to trim the processing pads having fragile conductive surfaces that are commonly used in ECMP systems. The novel pad conditioner includes an annular body that is disposed on a backing plate. The backing plate is adapted to be coupled to a finishing head assembly for pushing the pad conditioner against the polishing surface of the polishing pad 9 200821092. The ring opening $ φ dressing body comprises a polycrystalline diamond cover or coating, and when the cover layer is in contact with the abrasive surface, the crucible is used for refreshing, scoring or trimming the Grind the surface. In some embodiments, the multi-layer diamond-coated I layer is machined to have a plurality of the same structure of mussels that can be used to trim the abrasive surface of the polishing pad. The dimensions, height and spacing (PitCh) of the structures are controlled and have strong tightness to increase the cut rate without adversely increasing the surface roughness of the surface of the polishing pad and This avoids the accumulation or clogging of the surface-specific grinding by-products such as metal particles and/or exhausted and/or torn from the abrasive surface. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a top plan view of a portion of a processing system embodiment 100 which is provided with a pad conditioner embodiment 丨丨〇, which is disposed on a finishing device 115. In one embodiment, the system is configured to: planarize or polish a semiconductor substrate, and generally includes a polishing module 1 8 having one or more polishing machines disposed therein 120Α-120Β. Each of the grinding tables 12A-12C includes a platform 13A that supports an abrasive material 125. During processing, a substrate is pushed by a substrate carrier head 24 such that the substrate abuts the abrasive material 125 and the platform 130 is rotated to provide at least between the substrate and the abrasive material 125. Part of the relative grinding motion. Process systems that may benefit from the embodiments described herein include the REFLEXION LK ECMPtm polishing system available from Applied Materials, Inc. of Santa Clara, California, of course, although other polishing systems may also employ the embodiments described herein. The finishing device 115 is disposed adjacent each of the polishing stations iSOA-UOC, and is adapted to trim the abrasive material 125 on each of the platforms 10 200821092. As shown in Fig. 1, each of the dressing devices 115 is movable between a position avoiding the platform 130 and the abrasive material 152 and a dressing position on the abrasive material 125 on the polishing tables 120B and 120C. When in the trimming position, the dressing device 115 is selectively engaged with the abrasive material 1 25 and acts on the surface of the abrasive material 1 25 to enable the surface of the abrasive material 1 25 to be produced. The state of the desired result of the grinding. The dressing device 115 may be swept and/or rotated relative to the abrasive material 1 25, during which the dressing device 115 may additionally rotate on the platform 130. The operation of the finishing process can be controlled by means of manual input by the equipment operator or by returning a recipe to the controller. The abrasive material 1 2 5 is trimmed using a separate finishing device (not shown) located at the distal end of the system 10 以 either alternatively or in combination. The abrasive material 115 includes an at least partially electrically conductive abrasive surface. An example of the abrasive material 1 2 5 includes a composition composed of a dielectric material and a conductive material. In an embodiment, the abrasive material 1 2 5 may comprise a dielectric or conductive material having a plurality of conductive elements disposed therein. The electrically conductive elements may be small sheets, granules, etc., and are disposed in a dielectric or electrically conductive material, such as in a polymeric material. Examples of conductive materials that can be used as conductive elements and/or conductive materials include copper, carbon-based materials, gold, tumbling, silver, tin, zinc, nickel, diamonds, and combinations thereof, or are resistant to grinding. Other conductive materials for chemicals. Carbon-based materials include carbon black, graphite, and carbon particles. Examples of the conductive carbon-based material include carbon powder, carbon fiber, carbon nanotube, carbon nano-foam, carbon aerogels, graphite, and a combination of the above materials. In an embodiment of 11 200821092, conductive abrasives may contain conductive foil, polymer material containing inverted materials, 邋雷姐1# Λ ¥ grid, conductive sheets, conductive fibers or conductive fibers Woven fabric. The lead material, fiber or fabric can be placed in the polymer material. Fig. 2 is a cross-sectional view of the repairing device 115 of Fig. 1, showing an embodiment of the repairing effect 110.塾 σ 〇 μ f Κ 1 1 〇 έ is placed above the abrasive material 1 2 5 . The dressing device 1 1 S, s a & hoist includes a trim head assembly 202 that is coupled to a * support member 204 via an arm 206. The support member 204 is inserted through the holder of the polishing module 108 and is placed in the seat. A plurality of bearings are disposed between the base and the support member 204 to rotate the support member 204. An actuator 210 is coupled to the base and the μ of the support member to control the rotational orientation of the support member (10). The actuating member 21Q can rotate the arm 2〇6 extending from the support around the support member 204, which can laterally position the dressing head assembly 202 relative to the polishing table 1 2 6 。. The height of the dressing device 115 and/or the trim head 205 is typically controlled by pressurizing or evacuating an expandable cavity 290 disposed within the t-head assembly 202 and partially surrounded by a diaphragm ring. "The mater 1 1 0 joint causes the trim head assembly 2 0 2 and can optionally be steeply sinned against the abrasive material i 2 5 while rotating to trim the abrasive material 125. The pad conditioner 1 1 0 includes one The backing plate and a finishing surface. The backing plate and/or the finishing surface are typically circular, disc-shaped or annular to facilitate the rotation of the pad dresser 1 1 and to enhance the dressing action of the abrasive material 及 25 and/or control trimming In this embodiment, the abrasive material 1 25 includes a polishing pad having a first conductive material 270 and a second conductive layer 272, and between the first and second conductive layers of the 12 200821092 Separated by an insulating layer 2 74. The first conductive layer 270 functions as an electrode and has an abrasive surface 276 that is at least partially electrically conductive as described above and that contacts a substrate during the polishing process. A conductive carrier 278 may be disposed between the first conductive layer 270 and the insulating layer 274 to provide additional support for the first conductive layer 270. The conductive carrier 278 may be a mesh as described above. Cloth, fabric" and It is coated with a conductive material. An example of a conductive body may be a mesh or fabric made of nylon and coated with a conductive material such as gold. Engaged to the end of a power source (not shown) (not Illustrated) can be coupled to one or both of the conductive carrier 278 and the first conductive layer 270 to provide a voltage to the first conductive layer 270. The second conductive layer 272 acts as the opposite of the first conductive layer 270 An electrode, and may include an end for coupling to different poles of the power source. The first conductive layer 270 may be a polymer material internally embedded with a plurality of conductive elements 280 as described above. A substrate (not shown) abuts the abrasive material 1 25, and the first conductive layer 250 is electrically connected to a conductive material that sinks on the surface of the substrate. The first conductive layer 270 and/or The conductive material on the substrate is in electrical communication with the second conductive layer 272 through an electrolyte supplied to the surface of the abrasive material 125. In an embodiment, an electrolyte flows through the plurality of openings 282, The openings 282 extend through at least a portion of the abrasive material The upper surface of the second conductive layer 272. When one or both of the substrate 130 and the substrate are rotated, the conductive material on the surface of the substrate is removed by electrochemical and mechanical forces. Between or after, it may be necessary to trim the pad-grinding surface of Table 21 200821092 Surface 2 7.6 to maintain the desired processing results. The finishing process may create, modify, and/or clean the grooves in the grinding surface 276 and/or Roughness. In another application, the abrasive surface 276 is trimmed to update the abrasive surface 276. The refreshing step may include at least one of the following actions: exposing new or unused material on the abrasive surface 276, removing The by-product is ground, the spent and/or torn portions of the abrasive surface are removed and/or the oxide deposited in or on the surface of the abrasive surface 276 is removed or reduced. The abrasive surface can be trimmed prior to grinding using a new polishing pad. The abrasive surface can also be trimmed during the grinding process to maintain and/or increase the surface roughness and removal rate of the abrasive surface 276; After the grinding process, the grinding surface 276 is trimmed to adjust the grinding surface 276 to prepare a new substrate for grinding. Figures 3A and 3B show an exploded cross-sectional view and a bottom view, respectively, of an embodiment of the pad conditioner 110. In one embodiment, the pad conditioner 1 1 〇 includes a ring member 310, which is disposed on a backing plate or backing plate 305, and the backing plate is coupled to the finishing head 250. The backing plate 3 0 5 is connected to a trim head assembly (see Figure 2). The backing plate 305 includes a first surface 317 that is coupled to the surface 316 of the conditioning head 250. The backing plate 305 also includes a second surface 318 on the opposite side of the first surface 317. At least one of the first surface 317 and the second surface 318 is disposed in a plane orthogonal to the center line 340 of the backing plate 305. In the embodiment depicted in Figures 3A and 3B, the ring member 310 is concentrically coupled to the backing plate 305 and the backing plate 305 is concentrically coupled to the conditioning head 250. A size (e.g., diameter) of the ring member 310 is smaller than the size of the back plate 305, and portions of the second surface 3 1 8 14 200821092 of the back plate 305 are exposed, for example, the outer portion 3 0 6 and inner part 3 0 4 . In one embodiment, the size of the backing plate extends beyond the size of the ring member 310 to out of an outer portion. Although the ring member 310 is circulated or annular as described herein, the ring member 310 may also be a solid or solid plate having no inner diameter. In one embodiment, the backing plate 305 includes a strong material such as ceramic or metal such as stainless steel, sinter or other metals. The first surface 317 of the backing plate 305 is adapted to abut against the surface 317 of the conditioning head 250. A plurality of openings 3 1 9 are formed in the backing plate 305 to facilitate connecting the backing plate 305 to the dressing head 250°. The opening 319 can be used to receive a plurality of alignment pins or fasteners (not shown). The pins or fasteners can be coupled to the mating holes 3 22 and/or 3 24 . In one embodiment, at least one of the mating holes 3 2 2 and 3 24 includes a threaded hole (f e m a 1 e t h r e a d). For example, the backing plate 305 may have one or more openings 3 1 9 formed in the bit portion 306 to facilitate attachment to the trimming head 25 by fasteners such as screws, bolts, pins, and the like. In the embodiment depicted in Figures 3-3-3, four threaded holes 3 24 are formed along the outer diameter of the dressing head 250. Additionally, one or more apertures (not shown) may be formed in the backing plate 305 for mating with features extending from the conditioning head 250, such as from the trimming head 250. The positioning pins match. The ring member 2 10 typically includes an annular body 3 2 0 and a trimming surface 3 15 formed on the annular body 320. In an alternate embodiment (not shown), the annular body 3 20 may be a solid flat cylindrical member having a trim surface 3 15 disposed thereon. The annular body 3 20 includes a carbide material, 15 200821092 such as tungsten carbide, and the annular body 320 is coupled to the surface 3 18 of the backing plate 305. The annular body 320 can be adhered to the backing plate 305 by an adhesive, such as an epoxide material or a suitable adhesive material. In an embodiment, the ring member 310 has a thickness of about 2.0 millimeters (mm) to about 3 meters, and the thickness of the trimming surface 315 is greater than or equal to about 0.3 millimeters. In one application, the outer diameter and inner diameter of the ring member 3 10 The ratio of the diameter is 1. 8 4 :1. In an embodiment, an annular ring 32 is formed in the back plate 305, and the annular channel 326 is designed to receive the annular body. In one embodiment, the ring member 310 is opposite the back plate. The surface of the surface 3 3 5 is inclined or convex. For example, the center of the ring 310 is thicker and is inclined or curved radially outward (the 3A is inclined upward), so that the cross-sectional size at the edges thereof is thin. In one, the center of the annular body 3 20 is thicker or inclined such that the trimming surface 315 on the annular body 300 is inclined relative to the plane of the second surface 318 of the backing plate 3 0 5 Prominent appearance. In this implementation, the trimming surface 315 formed on the annular body 320 may have substantially equal cross-sectional thicknesses on the shaped body 320. In another application 'shown', the annular body 320 may have a phase thickness at its center and edge, and the trimming surface 3 15 formed on the annular body 3 20 is machined to present a thicker center, such that trimming The surface 3 15 is inclined or convex with respect to the plane of the second surface 3 1 8 of the back phase. In one embodiment, the ring member 310 includes a dimension 35 5 that includes a value from the central portion of the ring member 310 to the edge portion. The size of 3 5 5 may be about linear or less than or equal to 50 microns and the second is at .5 mm. Approx. channel 320° The second embodiment is applied to the first instance of the ring t (the same difference of the i 305 size difference is 200821092 (linear delta) or curved delta (curved delta), for example Approximately less than or equal to 40 microns. Further, the perimeter of the annular body 320 is free of contact with the substrate to reduce or avoid damage to the abrasive surface of the abrasive crucible (not shown) due to contact during the trimming process. In addition, the outer diameter and/or the inner diameter of the annular body may be inclined, rounded, and chamfered to revolve the edge of the edge portion of the annular body 320. The trimming surface disposed on the annular body 3 1 5 conforms to the respective rounded portions of the annular body 3 20 to avoid or reduce damage to the abrasive surface of the polishing pad. The finishing surface 3 1 5 comprises a polycrystalline diamond coating or film layer in which the coating Having a plurality of structures 350 and extending out of the coating. In one embodiment, the conditioning surface 315 is formed from a polycrystalline diamond coating that melts the fine diamond powder by high temperature and pressure. To form the single stone diamond coating In one embodiment, a diamond powder having micron-sized grains is sintered into the finishing surface 315. The coating is typically sintered using a temperature above 1300 ° C and a pressure above 5 Gpa. The use of molten cobalt facilitates the melting process while leaving a trace amount of conductive cobalt in the surface of the polycrystalline diamond. In this embodiment, wire electromotive discharge (WEMD) is used to form the cobalt. The structures 350 are used to create structures 350 having different sizes, shapes and patterns. The backing plate 350 can be of any shape, such as circular, circular or disk shaped. In one embodiment, the backing plate 3 0 5 The diameter is between about 1000 microns and about 110 microns, such as about 108 microns. The backing plate 3000 is typically hard enough or strong enough to minimize buckling under processing conditions. The robustness of the backing plate 305 is determined by the choice of material and the thickness of the backing plate. For example, the backing plate can be made of a hard material and has a thickness of between about 6 microns and about 7 microns. Figure C shows a detailed view of the trimmed surface 3 1 5 of Figure 3B The finishing surface 315 comprises a plurality of structures 350, which are designed to have a highly uniform geometry and are spaced apart over the entire finishing surface 3 15 . For example, the structures 3 5 0 Uniformly spaced throughout the conditioning surface 315. Each structure 350 has a base 352 and a tip 354. Each structure 350 may be pyramidal, conical, polygonal or other suitable shape. For example, the structures 350 can be polygonal structures, such as three- or quadrilateral elongated objects, or a combination thereof. The structures 350 may be disposed on the entire trimming surface 315 as shown in the grid or X/Y pattern, or the structures may be in the form of groupings or other consistent patterns such as polar arrays. Formed on the entire finishing surface 3 15 . In other embodiments (not shown), the spacing of the structures 350 (s p a c i n g) can be designed to be a non-uniform pattern. In one embodiment, each structure 350 includes a pyramid shape having a quadrilateral base 3 5 2 , but the substrate may also be of any polygonal shape, such as three or more sides. In this embodiment, the substrate 35 2 of each structure 350 is substantially rectangular and has a width of between about 0.1 mm and about 2 mm, for example between 0.15 mm and about 0.17 mm. , or about 0 · 16 mm. In addition to the pyramidal shape, the structures 350 may take other shapes such as a vertical block shape, a triangular shape strip shape, a conical shape, a frustrums, a cylindrical body, or a combination of the above shapes. The spacing or spacing between the tips 3 5 4 of the structures 350 is between about 450 μm and about 550 μm 18 200821092, for example between 4 7 5 microns and 5 2 Between 5 microns. In one application, each substrate 325 is adjacent to the other substrate 325, such that the end of a structure 305 is also the beginning of a structure 350. In one embodiment, the structure 350 is designed as a plurality of cutting edges to form a plurality of grooves or channels in the abrasive surface 276 of the polishing pad (see Figure 2) during trimming. The consistency of the height and spacing of the structures allows for the engraving of grooves having substantially uniform depths in the abrasive surface, and improved grinding results due to the formation of substantially uniform asperities in the abrasive surface. In addition, the shape of the structures facilitates the removal of abrasive by-products and provides a more consistent scoring depth and a more consistent trim on the abrasive surface. The backing plate 305 can be of any shape, such as circular, circular or disc shaped. In one embodiment, the backing plate 305 has a diameter between 1000 mm and about 1 10 mm, such as about 1 08 mm. The backing plate 3 05 is typically hard enough or strong enough to minimize buckling under processing conditions. The robustness of the backing plate 305 can be determined by the choice of material and the thickness of the backing plate. For example, the backsheet can be made of a hard material and has a thickness of between about 6 microns and about 7 microns. Figure 4A is a partial cross-sectional view of the trimming surface embodiment 4 1 6 ! provided on the annular body 3 20 . The trimming surface 4 1 6 1 is similar to the trimming surface 315 described above. The trimming surface 416i includes a plurality of structures 305 extending from a valley or bottom surface 400, the bottom surface 400 showing the interface between the adjacent structures 350. In an embodiment, the bottom surface 400 is located on the entire trimming surface 3 1 5 in a grid or X/Y pattern as shown in the 3B and 3 C drawings, and at the bottom surface 40 0, At the end of a structure 350, another structure 350 and 19200821092 begin to form a substantially equidistantly spaced and repeating pattern. In this embodiment, the structures 350 are substantially equal in height to the bottom surface "H" and are distributed over the entire surface 315 in a substantially equidistant pattern. In this embodiment, each structure 350 is substantially equal to a height deviation of between about ± 30 microns. For example, the height Η of each face may be about 170 microns and the deviation is between ± 30 microns. In the embodiment, the height deviation between any two adjacent tips 3 5 4 is less than about 30 microns, for example Less than or equal to about 25 microns. Figure 4 is a partial cross-sectional view of the trimming surface of the annular body 320, Example 4 1 62. The trimming surface 4 1 62 is similar to the upper surface 315. Trimming surface 4162 includes a plurality of structures 350 having at least two heights. In this embodiment, a portion of the structure can have a first height similar to the structure 350 described in Fig. 4, and the remaining structure 350 has a height that is about half of the first height. 4C and 4D are partial cross-sectional views of other embodiments of the structure 350 formed in the trimming surfaces 4163 and 4164. In the 4Cth embodiment, the structure 350 is formed on the trimming surface 4 1 6 3 and has a similar shape to the structure 350. In this embodiment, the structure 350 has a first height, a second height and a third height height greater than the second height, and the second height is greater than the third height in a repeating pattern. A height is substantially equal to each other, and the second height and the third height also form a uniform pattern in the trimming surface 41 63. In Fig. 4D, it is shown that a plurality of structures 350 have a gradual increase or a gradual lower height trimming south' case r structure 3 5 0 . In one or the other, the actual trimming "construction 3 5 0 3 50 can be used, and the above or its figure is the same as in the above case. First every first. Thus, the embodiment is lowered by 20 200821092 degrees to create a plurality of tips 3 5 4 that fill the trim surface 4 1 64. Each height (13 heights are shown in this cross-sectional view) is lower than the highest structure 350, and each height change value between adjacent tips 35 4 may be substantially equal. The progressive height may begin at the outer diameter of the trimming surface 41 64 and slope inwardly downward to the inner diameter of the trimming surface 4 1 64, or vice versa. In this embodiment, the cross-sectional thickness of the trimming surface 4 1 64 across the width of the entire annular body 3 20 is substantially equal. Alternatively, the thickness of the cross-section of the trimming surface 4164 at the inner diameter of the annular body 320 may be smaller, or vice versa. Figure 4E shows a partial detailed cross-sectional view of another embodiment of the trimming surface 315. Each structure 350 extends from the valley or bottom surface 400 to the tip end 354. From adjacent reference line 425, each adjacent sidewall of each structure has a first angle 4 1 0 and an adjacent angle 420. In an embodiment, the reference line 425 is perpendicular to the upper surface of the annular body 320. In one application, the first angle 410 is substantially equal to the adjacent angle 420. For example, the first angle 410 is between about 4 and 46 degrees, such as about 44 degrees, from the adjacent angle 4 2 0 . In one embodiment, the first angle 410 of the bottom surface 400 is defined to be between about 86 and 94 degrees, such as about 88 degrees. Although not shown, at least a portion of the structures 350 of the structures 350 may be flattened at their tips 3 54. What is more, a portion of the flat tip 3 5 4 may be grooved, rounded, or may have a sharp transition between the flat tip of the structure 350 to the side wall. In addition, a plane and/or a ditch is left therebetween by spacing the substrates 350 of the structures 350, and spaces are formed between the structures 350 in the trimming surface 315. . 21 200821092 Polycrystalline diamond has a very durable surface that resists crystal breakage and/or crystal dislodgment during trimming. The polycrystalline diamond film or coating comprising the finished surface 315 herein can be machined to produce any configuration and combination of structure and/or tip size, shape and spacing. The height of the structures and/or tips can be controlled to form uniform or different sizes. The structures may also be organized in a uniform spacing according to geometric patterns, or organized at controlled but inconsistent intervals. The shape and height control and consistency of the structures can be selected to provide more structural contact to the abrasive surface during trimming. In addition, each of the structures 350 is subjected to less mechanical stress, which extends the life of the pad conditioner 110. The frequency, spacing, height and shape of the structures 350 can also be selected to reduce or eliminate the accumulation of by-products such as conductive elements from the abrasive surface 12.5 and other articles. This produces a highly reproducible score or trim pattern on the polishing pad. The grinding process of the grinding is thus uniform, and the load can be distributed more evenly over the structures 350 to further extend the life of the pad conditioner Π0. Similarly, the dressing process of the frangible abrasive surface of the polishing pad 1 25 is less intense and creates a substantially uniform roughness in the abrasive surface 1 25 . This results in a longer life of the polishing pad. The experimental results also show that the use of a polycrystalline diamond coating as a finishing surface 3 1 5 can increase the service life of the abrasive material of the polishing pad by a factor of two. The spacing and/or size of the structures produces substantially uniform scores and grooves in the abrasive material to produce substantially uniform roughness on the abrasive material. And the life of the polishing pad is increased from 10.5 crystal wafers to about 3,000 wafers, and the number of replacement pads is reduced to the maximum 22 200821092
少，從而降 面修整製程 粗糙度，從 使用多 11 0能夠更 前，可反覆 原始幾何結 更新元件， 雖然本 本發明基本 步的本發明 決定。 【圖式簡單 本發明 施例繪於附 需了解的是 因此不應用 效實施例。 第1圖 處理系統具 第2圖 置具有一墊 第3A 低擁有成本與提高產量。甚者，一致的研磨表 可於較短的修整時間内提供可接受的研磨表面 而提高系統產量。 晶鑽石塗層作為修整表面3 1 5亦可該墊修整器 新表面（refurface)。再該多晶鑽石塗層磨損掉之 多次處理該多晶鑽石塗層而再生出結構3 5 0的 構。因此可藉著再次打磨該些修整元件來取代 從而降低擁有成本。 發明的多個實施例以敘述如上，然而在不偏離 範圍的情況下，當可衍生出多種其他與更進一 實施例。本發明範圍當由後附申請專利範圍所 說明】 係參照多個實施例進一步詳述如上，且部分實 圖中，以求更清楚了解本發明上述特徵。然而 ，該些附圖僅顯示數個本發明的典型實施例， 來限制本發明範圍。本發明範圍還允許其他等 為處理系統實施例之一部分的上視圖，顯示該 有一修整裝置實施例； 為第1圖之修整裝置的截面圖，顯示該修整裝 修整器實施例； 圖為一墊修整器與一修整頭之實施例的部分分 23 200821092 解截面圖； 第3 B圖為第3 A圖之墊修整器實施例的下視圖； 第3 C圖顯示第3 B圖之修整表面實施例的表面細部； 第4A至4D圖顯示設置在一環形主體上之不同修整表 面實施例的部分截面圖； 第4E圖為修整表面實施例一部分的細部截面圖； 為了有利於了解，在各圖中盡可能地使用相同元件符 號來代表相同的元件。並且無須特別說明就可思及到，揭 示在一實施例中的元件可有利地用於其他實施例中。 【主要元件符號說明】 100處理系統 11 0墊修整器 120A、120B、1 20C 研 130平台 1 2 5研磨材料 204支撐件 210致動器 270第一導電層 274絕緣層 278導電載體 2 82 開口 3 04内部分 3 0 6外部分 1 0 8研磨模組 1 1 5修整裝置 磨機台 124基材承載頭 202修整頭組件 206手臂 2 5 0修整頭 272第二導電層 2 7 6研磨表面 2 8 0導電元件 290 可擴張空腔 305背板 3 1 0環形件 24 200821092Less, thereby reducing the surface roughness of the process, from the use of more than 10 0, can be repeated before the original geometric knot update component, although the invention of the basic steps of the present invention is decided. BRIEF DESCRIPTION OF THE DRAWINGS The embodiments of the present invention are drawn to the extent that the embodiments are not applied. Figure 1 Processing System Tool Figure 2 has a pad 3A low cost of ownership and increased production. In addition, consistent grinding tables provide acceptable abrasive surfaces for shorter system times and increase system throughput. The crystal diamond coating as a finishing surface 3 1 5 may also be a new surface of the pad conditioner. The polycrystalline diamond coating is then worn away to treat the polycrystalline diamond coating a plurality of times to regenerate the structure of structure 350. Therefore, it is possible to reduce the cost of ownership by re-polishing the trimming elements. The various embodiments of the invention are described above, but without departing from the scope, various other and further embodiments can be derived. The scope of the invention is set forth in the description of the appended claims. However, the drawings show only a few exemplary embodiments of the invention to limit the scope of the invention. The scope of the present invention also allows for other top views of a portion of the processing system embodiment, showing an embodiment of the finishing device; a cross-sectional view of the finishing device of Figure 1, showing the embodiment of the finishing device; Part of the embodiment of the dresser and a trimmer 23 200821092 is a cross-sectional view; Figure 3B is a bottom view of the pad dresser embodiment of Figure 3A; Figure 3C shows the trimming surface of Figure 3B Example of surface detail; Figures 4A through 4D show partial cross-sectional views of different trimming surface embodiments disposed on an annular body; Figure 4E is a detailed cross-sectional view of a portion of the trimming surface embodiment; Wherever possible, the same element symbols are used to represent the same elements. It is to be understood that the elements in one embodiment may be advantageously utilized in other embodiments. [Main component symbol description] 100 processing system 11 0 pad conditioner 120A, 120B, 1 20C Grinding 130 platform 1 2 5 abrasive material 204 support 210 actuator 270 first conductive layer 274 insulating layer 278 conductive carrier 2 82 opening 3 04 Inner part 3 0 6 Outer part 1 0 8 Grinding module 1 1 5 Dressing device Mill table 124 Substrate carrier head 202 Finishing head assembly 206 Arm 2 5 0 Finishing head 272 Second conductive layer 2 7 6 Grinding surface 2 8 0 conductive element 290 expandable cavity 305 back plate 3 1 0 ring member 24 200821092
3 1 5修整表面 317第一表面 3 19 開口 3 22、3 24配對孔 3 28黏著劑 3 5 0結構 3 54尖端 400底部 4161 、 4162 、 4163 、 425參考線 3 16 面 3 1 8第二表面 3 20環形主體 3 2 6環形通道 3 3 0 中心線 3 5 2基底 3 5 5尺寸 410第一角度 164修整表面3 1 5 Trimming surface 317 First surface 3 19 Opening 3 22, 3 24 Mating hole 3 28 Adhesive 3 5 0 Structure 3 54 Tip 400 Bottom 4161, 4162, 4163, 425 Reference line 3 16 Face 3 1 8 Second surface 3 20 ring body 3 2 6 ring channel 3 3 0 center line 3 5 2 substrate 3 5 5 size 410 first angle 164 trim surface
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