TWI289880B - Manufacturing process for a multilayer structure - Google Patents

Manufacturing process for a multilayer structure Download PDF

Info

Publication number: TWI289880B
Authority: TW; Taiwan
Prior art keywords: layer; sige; substrate; support substrate; level
Prior art date: 2002-12-06

Application number

TW092134368A

Other languages

English (en)

Chinese (zh)

Other versions

TW200511393A (en

Inventor

Carlos Mazure

Original Assignee

Soitec Silicon On Insulator

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-12-06

Filing date

2003-12-05

Publication date

2007-11-11

2003-12-05 Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator

2005-03-16 Publication of TW200511393A publication Critical patent/TW200511393A/zh

2007-11-11 Application granted granted Critical

2007-11-11 Publication of TWI289880B publication Critical patent/TWI289880B/zh

Links

238000004519 manufacturing process Methods 0.000 title claims abstract description 8
239000000758 substrate Substances 0.000 claims abstract description 61
238000000034 method Methods 0.000 claims abstract description 53
239000000463 material Substances 0.000 claims abstract description 52
239000004065 semiconductor Substances 0.000 claims abstract description 17
229910000577 Silicon-germanium Inorganic materials 0.000 claims description 38
230000006978 adaptation Effects 0.000 claims description 25
238000002513 implantation Methods 0.000 claims description 13
239000000126 substance Substances 0.000 claims description 13
238000000151 deposition Methods 0.000 claims description 8
238000005229 chemical vapour deposition Methods 0.000 claims description 6
230000008021 deposition Effects 0.000 claims description 4
239000007943 implant Substances 0.000 claims description 4
230000002040 relaxant effect Effects 0.000 claims description 2
238000000407 epitaxy Methods 0.000 claims 2
230000000717 retained effect Effects 0.000 claims 2
KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
230000015572 biosynthetic process Effects 0.000 claims 1
229910052707 ruthenium Inorganic materials 0.000 claims 1
230000000087 stabilizing effect Effects 0.000 claims 1
238000007740 vapor deposition Methods 0.000 claims 1
239000010410 layer Substances 0.000 description 131
235000012431 wafers Nutrition 0.000 description 15
230000007547 defect Effects 0.000 description 10
239000013078 crystal Substances 0.000 description 8
230000003628 erosive effect Effects 0.000 description 6
229910052732 germanium Inorganic materials 0.000 description 6
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
238000005530 etching Methods 0.000 description 5
239000000872 buffer Substances 0.000 description 4
238000000926 separation method Methods 0.000 description 4
239000004575 stone Substances 0.000 description 4
239000001307 helium Substances 0.000 description 3
229910052734 helium Inorganic materials 0.000 description 3
SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
238000005498 polishing Methods 0.000 description 3
238000004381 surface treatment Methods 0.000 description 3
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
230000003044 adaptive effect Effects 0.000 description 2
VNWKTOKETHGBQD-AKLPVKDBSA-N carbane Chemical compound [15CH4] VNWKTOKETHGBQD-AKLPVKDBSA-N 0.000 description 2
239000004020 conductor Substances 0.000 description 2
238000011161 development Methods 0.000 description 2
239000001257 hydrogen Substances 0.000 description 2
229910052739 hydrogen Inorganic materials 0.000 description 2
238000010348 incorporation Methods 0.000 description 2
238000005468 ion implantation Methods 0.000 description 2
238000012545 processing Methods 0.000 description 2
230000003746 surface roughness Effects 0.000 description 2
238000012546 transfer Methods 0.000 description 2
235000017166 Bambusa arundinacea Nutrition 0.000 description 1
235000017491 Bambusa tulda Nutrition 0.000 description 1
241001330002 Bambuseae Species 0.000 description 1
240000008564 Boehmeria nivea Species 0.000 description 1
235000015334 Phyllostachys viridis Nutrition 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
239000011425 bamboo Substances 0.000 description 1
230000000295 complement effect Effects 0.000 description 1
230000002950 deficient Effects 0.000 description 1
238000010586 diagram Methods 0.000 description 1
238000001035 drying Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
230000002349 favourable effect Effects 0.000 description 1
239000007789 gas Substances 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
238000003780 insertion Methods 0.000 description 1
230000037431 insertion Effects 0.000 description 1
150000002500 ions Chemical class 0.000 description 1
238000005304 joining Methods 0.000 description 1
238000004377 microelectronic Methods 0.000 description 1
239000008267 milk Substances 0.000 description 1
210000004080 milk Anatomy 0.000 description 1
235000013336 milk Nutrition 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
239000000843 powder Substances 0.000 description 1
238000010298 pulverizing process Methods 0.000 description 1
238000011160 research Methods 0.000 description 1
239000002689 soil Substances 0.000 description 1
239000007787 solid Substances 0.000 description 1
230000007847 structural defect Effects 0.000 description 1
239000013589 supplement Substances 0.000 description 1
239000002344 surface layer Substances 0.000 description 1
229910052715 tantalum Inorganic materials 0.000 description 1
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
229910052714 tellurium Inorganic materials 0.000 description 1
238000011282 treatment Methods 0.000 description 1
229910052727 yttrium Inorganic materials 0.000 description 1
VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Recrystallisation Techniques (AREA)

TW092134368A 2002-12-06 2003-12-05 Manufacturing process for a multilayer structure TWI289880B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
FR0215499A FR2848334A1 (fr)	2002-12-06	2002-12-06	Procede de fabrication d'une structure multicouche

Publications (2)

Publication Number	Publication Date
TW200511393A TW200511393A (en)	2005-03-16
TWI289880B true TWI289880B (en)	2007-11-11

Family

ID=32320086

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW092134368A TWI289880B (en)	2002-12-06	2003-12-05	Manufacturing process for a multilayer structure

Country Status (8)

Country	Link
EP (1)	EP1568073A1 (ja)
JP (1)	JP4762547B2 (ja)
KR (1)	KR100797210B1 (ja)
CN (1)	CN1720605A (ja)
AU (1)	AU2003294170A1 (ja)
FR (1)	FR2848334A1 (ja)
TW (1)	TWI289880B (ja)
WO (1)	WO2004053961A1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US7110081B2 (en)	2002-11-12	2006-09-19	Asml Netherlands B.V.	Lithographic apparatus and device manufacturing method
US7247545B2 (en) *	2004-11-10	2007-07-24	Sharp Laboratories Of America, Inc.	Fabrication of a low defect germanium film by direct wafer bonding
KR101196791B1 (ko) *	2008-03-13	2012-11-05	소이텍	절연 매몰층 내에 차징된 영역을 갖는 기판
CN105023991B (zh) *	2014-04-30	2018-02-23	环视先进数字显示无锡有限公司	一种基于无机物的led积层电路板的制造方法
CN108231695A (zh) *	2016-12-15	2018-06-29	上海新微技术研发中心有限公司	复合衬底及其制造方法
CN107195534B (zh) *	2017-05-24	2021-04-13	中国科学院上海微***与信息技术研究所	Ge复合衬底、衬底外延结构及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5882987A (en) *	1997-08-26	1999-03-16	International Business Machines Corporation	Smart-cut process for the production of thin semiconductor material films
FR2783254B1 (fr) *	1998-09-10	2000-11-10	France Telecom	Procede d'obtention d'une couche de germanium monocristallin sur un substrat de silicium monocristallin,et produits obtenus
JP2001015721A (ja) *	1999-04-30	2001-01-19	Canon Inc	複合部材の分離方法及び薄膜の製造方法
US6323108B1 (en) *	1999-07-27	2001-11-27	The United States Of America As Represented By The Secretary Of The Navy	Fabrication ultra-thin bonded semiconductor layers
JP3607194B2 (ja) *	1999-11-26	2005-01-05	株式会社東芝	半導体装置、半導体装置の製造方法、及び半導体基板
FR2809867B1 (fr) *	2000-05-30	2003-10-24	Commissariat Energie Atomique	Substrat fragilise et procede de fabrication d'un tel substrat
JP2004507084A (ja) *	2000-08-16	2004-03-04	マサチューセッツ　インスティテュート　オブ　テクノロジー	グレーデッドエピタキシャル成長を用いた半導体品の製造プロセス
WO2002071491A1 (en) *	2001-03-02	2002-09-12	Amberwave Systems Corporation	Relaxed silicon germanium platform for high speed cmos electronics and high speed analog circuits
WO2002082514A1 (en) *	2001-04-04	2002-10-17	Massachusetts Institute Of Technology	A method for semiconductor device fabrication
US6566158B2 (en) *	2001-08-17	2003-05-20	Rosemount Aerospace Inc.	Method of preparing a semiconductor using ion implantation in a SiC layer
JP2003249641A (ja) *	2002-02-22	2003-09-05	Sharp Corp	半導体基板、その製造方法及び半導体装置

2002
- 2002-12-06 FR FR0215499A patent/FR2848334A1/fr active Pending
2003
- 2003-12-05 WO PCT/IB2003/006397 patent/WO2004053961A1/en active Application Filing
- 2003-12-05 TW TW092134368A patent/TWI289880B/zh not_active IP Right Cessation
- 2003-12-05 EP EP03789590A patent/EP1568073A1/en not_active Withdrawn
- 2003-12-05 KR KR1020057010109A patent/KR100797210B1/ko active IP Right Grant
- 2003-12-05 CN CNA2003801052499A patent/CN1720605A/zh active Pending
- 2003-12-05 JP JP2004558309A patent/JP4762547B2/ja not_active Expired - Lifetime
- 2003-12-05 AU AU2003294170A patent/AU2003294170A1/en not_active Abandoned

Also Published As

Publication number	Publication date
WO2004053961A1 (en)	2004-06-24
AU2003294170A1 (en)	2004-06-30
EP1568073A1 (en)	2005-08-31
FR2848334A1 (fr)	2004-06-11
KR20050084146A (ko)	2005-08-26
CN1720605A (zh)	2006-01-11
KR100797210B1 (ko)	2008-01-22
TW200511393A (en)	2005-03-16
JP2006509361A (ja)	2006-03-16
JP4762547B2 (ja)	2011-08-31

Legal Events

Date	Code	Title	Description
2024-01-11	MK4A	Expiration of patent term of an invention patent

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