TWI281695B - Semiconductor single crystal manufacturing equipment and graphite crucible - Google Patents

Semiconductor single crystal manufacturing equipment and graphite crucible Download PDF

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Publication number
TWI281695B
TWI281695B TW094110300A TW94110300A TWI281695B TW I281695 B TWI281695 B TW I281695B TW 094110300 A TW094110300 A TW 094110300A TW 94110300 A TW94110300 A TW 94110300A TW I281695 B TWI281695 B TW I281695B
Authority
TW
Taiwan
Prior art keywords
heater
heat
heaters
single crystal
crucible
Prior art date
Application number
TW094110300A
Other languages
English (en)
Chinese (zh)
Other versions
TW200535981A (en
Inventor
Tetsuhiro Iida
Akiko Noda
Junsuke Tomioka
Original Assignee
Sumco Techxiv Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Techxiv Corp filed Critical Sumco Techxiv Corp
Publication of TW200535981A publication Critical patent/TW200535981A/zh
Application granted granted Critical
Publication of TWI281695B publication Critical patent/TWI281695B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW094110300A 2004-03-31 2005-03-31 Semiconductor single crystal manufacturing equipment and graphite crucible TWI281695B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004105341 2004-03-31

Publications (2)

Publication Number Publication Date
TW200535981A TW200535981A (en) 2005-11-01
TWI281695B true TWI281695B (en) 2007-05-21

Family

ID=35063808

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094110300A TWI281695B (en) 2004-03-31 2005-03-31 Semiconductor single crystal manufacturing equipment and graphite crucible

Country Status (6)

Country Link
US (1) US7390361B2 (de)
JP (1) JP4773340B2 (de)
KR (1) KR101072664B1 (de)
DE (1) DE112005000715B4 (de)
TW (1) TWI281695B (de)
WO (1) WO2005095680A1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI681087B (zh) * 2018-04-27 2020-01-01 日商Ｓｕｍｃｏ股份有限公司 矽單結晶的製造方法及矽單結晶的提拉裝置
US10844513B2 (en) 2016-05-24 2020-11-24 Siltronic Ag Method for producing a semiconductor wafer of monocrystalline silicon, device for producing a semiconductor wafer of monocrystalline silicon and semiconductor wafer of monocrystalline

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US7497907B2 (en) * 2004-07-23 2009-03-03 Memc Electronic Materials, Inc. Partially devitrified crucible
DE112006002595B4 (de) * 2005-09-30 2018-03-01 Sumco Techxiv K.K. Herstellungsvorrichtung und Herstellungsverfahren für einen Einkristall-Halbleiter
JP5073257B2 (ja) * 2006-09-27 2012-11-14 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶製造装置及び方法
KR100831809B1 (ko) 2006-12-29 2008-05-28 주식회사 실트론 쵸크랄스키법에 의한 잉곳 성장용 히터 및 이를 구비하는단결정 잉곳 제조 장치
US20090090135A1 (en) * 2007-10-04 2009-04-09 Infrared Focal Systems, Inc. Method of making optical glass windows free of defects
JP5131170B2 (ja) * 2008-12-05 2013-01-30 信越半導体株式会社 単結晶製造用上部ヒーターおよび単結晶製造装置ならびに単結晶製造方法
JP5554401B2 (ja) * 2009-04-27 2014-07-23 アキュライド インターナショナル，インコーポレイテッド 引出しスライド及び錠止機構
JP5317117B2 (ja) * 2009-07-23 2013-10-16 株式会社フジクラ 窒化物単結晶の製造装置
JP5392040B2 (ja) * 2009-12-04 2014-01-22 信越半導体株式会社 単結晶製造装置及び単結晶製造方法
CN102517624A (zh) * 2011-12-16 2012-06-27 华中科技大学 一种多段控温晶体生长炉
CN102758248A (zh) * 2012-06-20 2012-10-31 合肥景坤新能源有限公司 单晶炉用均热式加热***
CN102758254A (zh) * 2012-06-20 2012-10-31 合肥景坤新能源有限公司 单晶炉加热***
KR101333791B1 (ko) * 2013-01-30 2013-11-29 한국세라믹기술원 단결정 성장장치
KR101467103B1 (ko) * 2013-06-21 2014-11-28 주식회사 엘지실트론 실리콘 단결정 성장 장치 및 그 성장 방법
CN105379415A (zh) * 2013-07-15 2016-03-02 莫门蒂夫性能材料股份有限公司 带涂层的石墨加热器构造
JP6458451B2 (ja) * 2014-10-31 2019-01-30 住友電気工業株式会社 炭化珪素単結晶の製造装置および炭化珪素単結晶の製造方法
CN106637386A (zh) * 2015-10-30 2017-05-10 西安通鑫半导体辅料有限公司 提高拉晶速度的直拉单晶用加热器及直拉单晶方法
CN106637387B (zh) * 2015-10-30 2019-12-17 西安通鑫半导体辅料有限公司 直拉单晶用加热器及直拉单晶方法
CN108350603B (zh) 2015-11-13 2020-11-13 胜高股份有限公司 单晶硅的制造方法
JP6579046B2 (ja) 2016-06-17 2019-09-25 株式会社Sumco シリコン単結晶の製造方法
KR102237292B1 (ko) 2019-07-31 2021-04-06 에스케이실트론 주식회사 잉곳 성장 장치용 도가니
CN110965118B (zh) * 2019-12-25 2022-04-15 西安奕斯伟材料科技有限公司 一种导流筒装置和拉晶炉
KR20230105339A (ko) * 2020-11-12 2023-07-11 글로벌웨이퍼스 씨오., 엘티디. 측면 히터 아래에 배치되는 열 차폐부를 갖는 잉곳 풀러 장치 및 이러한 장치를 이용하여 잉곳을 준비하기 위한 방법들
US20220145492A1 (en) * 2020-11-12 2022-05-12 GlobalWaters Co., Ltd. Ingot puller apparatus having a heat shield disposed below a side heater and methods for preparing an ingot with such apparatus

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JPS62153191A (ja) * 1985-12-27 1987-07-08 Mitsubishi Metal Corp 単結晶引き上げ装置
JP2681115B2 (ja) 1989-02-14 1997-11-26 住友シチックス株式会社 単結晶製造方法
JP3031470B2 (ja) 1989-05-29 2000-04-10 ヤマハ発動機株式会社 ４サイクルエンジン
DE4204777A1 (de) * 1991-02-20 1992-10-08 Sumitomo Metal Ind Vorrichtung und verfahren zum zuechten von einkristallen
JP2979770B2 (ja) 1991-09-11 1999-11-15 住友電気工業株式会社 単結晶の製造装置
JPH09227286A (ja) * 1996-02-24 1997-09-02 Komatsu Electron Metals Co Ltd 単結晶製造装置
JPH09263491A (ja) * 1996-03-27 1997-10-07 Shin Etsu Handotai Co Ltd シリコン単結晶の製造装置
JP3000923B2 (ja) 1996-03-28 2000-01-17 住友金属工業株式会社 単結晶引き上げ方法
JP3788116B2 (ja) * 1999-07-26 2006-06-21 株式会社Ｓｕｍｃｏ 単結晶成長用多機能ヒーターおよび単結晶引上装置
US6285011B1 (en) * 1999-10-12 2001-09-04 Memc Electronic Materials, Inc. Electrical resistance heater for crystal growing apparatus
JP3595977B2 (ja) * 1999-10-15 2004-12-02 株式会社日鉱マテリアルズ 結晶成長装置及び単結晶の製造方法
DE19959416C1 (de) * 1999-12-09 2001-03-15 Freiberger Compound Mat Gmbh Heizelement zum Beheizen von Schmelztiegeln und Anordnung von Heizelementen
JP2001270797A (ja) 2000-03-28 2001-10-02 Wacker Nsce Corp シリコン単結晶製造装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10844513B2 (en) 2016-05-24 2020-11-24 Siltronic Ag Method for producing a semiconductor wafer of monocrystalline silicon, device for producing a semiconductor wafer of monocrystalline silicon and semiconductor wafer of monocrystalline
TWI681087B (zh) * 2018-04-27 2020-01-01 日商Ｓｕｍｃｏ股份有限公司 矽單結晶的製造方法及矽單結晶的提拉裝置

Also Published As

Publication number Publication date
DE112005000715B4 (de) 2016-02-04
US7390361B2 (en) 2008-06-24
KR20070001203A (ko) 2007-01-03
JPWO2005095680A1 (ja) 2008-07-31
US20070215038A1 (en) 2007-09-20
KR101072664B1 (ko) 2011-10-11
DE112005000715T5 (de) 2008-07-03
JP4773340B2 (ja) 2011-09-14
WO2005095680A1 (ja) 2005-10-13
TW200535981A (en) 2005-11-01

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