CN110965118B - 一种导流筒装置和拉晶炉 - Google Patents
一种导流筒装置和拉晶炉 Download PDFInfo
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- CN110965118B CN110965118B CN201911357718.5A CN201911357718A CN110965118B CN 110965118 B CN110965118 B CN 110965118B CN 201911357718 A CN201911357718 A CN 201911357718A CN 110965118 B CN110965118 B CN 110965118B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
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CN201911357718.5A CN110965118B (zh) | 2019-12-25 | 2019-12-25 | 一种导流筒装置和拉晶炉 |
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CN201911357718.5A CN110965118B (zh) | 2019-12-25 | 2019-12-25 | 一种导流筒装置和拉晶炉 |
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CN110965118A CN110965118A (zh) | 2020-04-07 |
CN110965118B true CN110965118B (zh) | 2022-04-15 |
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CN115058772B (zh) * | 2022-07-13 | 2023-01-31 | 昆明理工大学 | 一种导流筒装置和拉晶炉 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1326518A (zh) * | 1998-06-26 | 2001-12-12 | Memc电子材料有限公司 | 任意大直径无缺陷硅晶体的生长方法 |
CN1341168A (zh) * | 1999-02-26 | 2002-03-20 | Memc电子材料有限公司 | 拉晶机用的热屏蔽装置 |
WO2005095680A1 (ja) * | 2004-03-31 | 2005-10-13 | Komatsu Denshi Kinzoku Kabushiki Kaisha | 半導体単結晶製造装置および黒鉛るつぼ |
CN103668440A (zh) * | 2013-12-16 | 2014-03-26 | 上海申和热磁电子有限公司 | 单晶硅直拉法热屏调整工艺 |
CN206204477U (zh) * | 2016-09-30 | 2017-05-31 | 上海合晶硅材料有限公司 | 阻流环、改善单晶硅径向电阻率均匀性的组件 |
CN106929910A (zh) * | 2015-12-30 | 2017-07-07 | 西安隆基硅材料股份有限公司 | 导流筒及具有该导流筒的单晶炉用热场 |
CN110573662A (zh) * | 2017-04-05 | 2019-12-13 | 胜高股份有限公司 | 热屏蔽部件、单晶提拉装置及单晶硅锭的制造方法 |
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2019
- 2019-12-25 CN CN201911357718.5A patent/CN110965118B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1326518A (zh) * | 1998-06-26 | 2001-12-12 | Memc电子材料有限公司 | 任意大直径无缺陷硅晶体的生长方法 |
CN1341168A (zh) * | 1999-02-26 | 2002-03-20 | Memc电子材料有限公司 | 拉晶机用的热屏蔽装置 |
WO2005095680A1 (ja) * | 2004-03-31 | 2005-10-13 | Komatsu Denshi Kinzoku Kabushiki Kaisha | 半導体単結晶製造装置および黒鉛るつぼ |
CN103668440A (zh) * | 2013-12-16 | 2014-03-26 | 上海申和热磁电子有限公司 | 单晶硅直拉法热屏调整工艺 |
CN106929910A (zh) * | 2015-12-30 | 2017-07-07 | 西安隆基硅材料股份有限公司 | 导流筒及具有该导流筒的单晶炉用热场 |
CN206204477U (zh) * | 2016-09-30 | 2017-05-31 | 上海合晶硅材料有限公司 | 阻流环、改善单晶硅径向电阻率均匀性的组件 |
CN110573662A (zh) * | 2017-04-05 | 2019-12-13 | 胜高股份有限公司 | 热屏蔽部件、单晶提拉装置及单晶硅锭的制造方法 |
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Effective date of registration: 20210922 Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: Room 1323, block a, city gate, No.1 Jinye Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
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Address after: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Patentee after: Xi'an Yisiwei Material Technology Co.,Ltd. Patentee after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Patentee before: Xi'an yisiwei Material Technology Co.,Ltd. Patentee before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |