TWI280399B - Physical amount sensor and lead frame used therein - Google Patents

Physical amount sensor and lead frame used therein Download PDF

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Publication number
TWI280399B
TWI280399B TW94134065A TW94134065A TWI280399B TW I280399 B TWI280399 B TW I280399B TW 94134065 A TW94134065 A TW 94134065A TW 94134065 A TW94134065 A TW 94134065A TW I280399 B TWI280399 B TW I280399B
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TW
Taiwan
Prior art keywords
lead
platform
portions
magnetic sensor
frame
Prior art date
Application number
TW94134065A
Other languages
Chinese (zh)
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TW200619658A (en
Inventor
Kenichi Shirasaka
Original Assignee
Yamaha Corp
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Filing date
Publication date
Priority claimed from JP2004290472A external-priority patent/JP4314580B2/en
Priority claimed from JP2004296370A external-priority patent/JP4244903B2/en
Priority claimed from JP2005087621A external-priority patent/JP2006269859A/en
Application filed by Yamaha Corp filed Critical Yamaha Corp
Publication of TW200619658A publication Critical patent/TW200619658A/en
Application granted granted Critical
Publication of TWI280399B publication Critical patent/TWI280399B/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4842—Mechanical treatment, e.g. punching, cutting, deforming, cold welding
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
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    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
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    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

A lead frame made of sheet metal includes: at lease two stages on which a physical amount sensor chip is mounted and having an area smaller than the mounting surface of the physical sensor chip; a rectangular frame surrounding the stages; a plurality of leads extending from the frame toward the stages, disposed peripherally around the stages, and including connecting leads for connecting the frame and the stages; and easy-deformable portions formed on the connecting leads and making the stages inclined by deforming themselves, the physical amount sensor chip being mounted with its mounting surface overlapped to the stages and parts of the plurality of the leads in the thickness direction of the frame.

Description

1280399 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種測量磁或重力等物理量方位或方向之 物理量感應器，及其使用之引線框架。 本申請案基於2〇04年10月1日之專利申請2〇〇4-29〇472 號、2004年10月8曰之專利申請2004-296370號，以及2005 年3月25日之專利申請2005-87621號，主張優先權，並於此 引用其内容。 【先前技術】 近年來，行動電話等攜帶終端裝置中，已有產品具有顯 示使用者位置資訊之GPS(Gl〇bal P〇sitioning System，全球 定位系統）功能。除此GPS功能之以外，具備正確檢測出地 磁或加速度之功能，藉此即可檢測出用戶所攜帶之攜帶終 端裝置之三維空間内的方位或方向或者移動方向。1280399 IX. Description of the Invention: [Technical Field] The present invention relates to a physical quantity sensor for measuring a physical orientation or direction of magnetic or gravity, and a lead frame therefor. The present application is based on a patent application No. 2〇〇4-29〇472, issued on October 1, 2004, and a patent application No. 2004-296370, filed on Oct. No. -87621, claiming priority, and citing its contents here. [Prior Art] In recent years, in a portable terminal device such as a mobile phone, an existing product has a GPS (Gl〇bal P〇sitioning System) function for displaying user location information. In addition to this GPS function, it has the function of correctly detecting geomagnetism or acceleration, thereby detecting the orientation or direction or direction of movement in the three-dimensional space of the portable terminal device carried by the user.

要使攜帶終端裝置具有上述功能，則攜帶終端裝置中必 須内置磁感應器、加速度感應器等物理量感應器。為使用 如此之物理量感應器檢測三維空間内之方位或加速度，物 理篁感應裔晶片必須搭載於傾斜之設置面上。 上述物理量感應器目前提供之產品各式各樣，例如作為 其中-種，眾所周去口’與上述構造不同之磁感應器，其於 未傾斜之設置面搭載有兩個磁感應器晶片。該磁感應器具 有兩方之磁感應器晶片’其中一方磁感應器晶片(物理量感 應器晶Μ載置於基板，感應於沿基板表面互相垂直之兩個 方向（x、Y方向）上外部磁場之磁性成分，他方磁感應器晶 104873.doc 1280399 片感應於垂直基板表面之方向财向）±外部磁場之磁性 成分。該磁感應器藉由此等一對磁感應器晶片所檢測出之 磁性成分，將地磁成分作為三維空間内之矢量而進行測定。 然而’該磁錢㈣將他方磁感應以#以相對於基板 表面垂直豎立之狀態載置，故存在厚度(相對於2方向之高 度）增3加之問題。因此，為儘量縮小該厚度，如上所述，將 物理Ϊ感應H晶片搭載於傾斜設置面’此於專利文獻i、2 及3中有所揭示。 抑例如專利文獻丨揭示有加速度感應器作為物理量感應 為口亥加速度感應器係單側光束構造，其預先將加速度感 應器晶片傾斜搭載於基板。因此，可較高地保持對應於傾 斜方向之特定軸方向感度，並降低包含沿基板表面方向之 其他軸方向的感度。 ^於先刚之物理量感應器，物理量感應器晶片因配 置於傾斜之設置面，故封裝須要足夠之面積或高度。因此， 用先如之封裝而緊密地内置於小型攜帶終端裝置内顯得 有限。 〔專利文獻1〕特開平9-292408號公報 〔專利文獻2〕特開20〇2_ 1 562〇4號公報 〔專利文獻3〕特開2〇〇4-128473號公報 [务明所欲解決之問題] 本务明係鑒於上述問題而開發完成者，其目的在於提供 "於小型且薄型之封包内傾斜收納物理量感應器晶片 之物理量感應器及其使用之引線框架。 104873.doc 1280399 【發明内容】 為解決上述問題，本获 且借· $ ^ ^月之包含金屬性薄板之引線框架 /、備·至少兩個平臺部，盆 -5- ^ ? 八衷载有物理量感應器晶片，J： 面積小於該物理量礒靡哭曰 ^ 勺圖“ 这應裔晶片之載置面；矩形框架部，1 包圍此等平臺部；複數 ^ Λ其自該框架部向上述平臺部 方向延伸，配置於上述平臺 加却Α… 卩之周圍，且包含連結上述框 木一 /、上述各平臺部之連纟士弓丨始.、 、、"引線，以及易變形部，其形成In order for the portable terminal device to have the above functions, a physical sensor such as a magnetic sensor or an acceleration sensor must be built in the portable terminal device. In order to detect the azimuth or acceleration in a three-dimensional space using such a physical quantity sensor, the physical sensor wafer must be mounted on the inclined setting surface. The above-mentioned physical quantity sensors are currently provided with various types of products, for example, as one of them, a magnetic sensor different from the above-described configuration, which is provided with two magnetic sensor wafers on an untilted mounting surface. The magnetic sensor has two magnetic sensor wafers, one of which is a magnetic sensor wafer (a physical quantity sensor wafer is placed on the substrate, and the magnetic component of the external magnetic field is induced in two directions (x, Y directions) perpendicular to each other along the surface of the substrate). , the magnetic sensor crystal 104873.doc 1280399 piece is induced in the direction of the vertical substrate surface) ± magnetic material of the external magnetic field. The magnetic sensor measures the magnetic component detected by the pair of magnetic sensor wafers and uses the geomagnetic component as a vector in a three-dimensional space. However, the magnetic charge (4) has the problem that the magnetic induction is placed in a state of being vertically erected with respect to the surface of the substrate, so that the thickness (the height with respect to the two directions) is increased by three. Therefore, in order to minimize the thickness, the physical Ϊ sensing H wafer is mounted on the inclined installation surface as described above, which is disclosed in Patent Documents i, 2 and 3. For example, the patent document discloses that an acceleration sensor is used as a physical quantity induction as a one-side beam structure of an aperture acceleration sensor, and the acceleration sensor wafer is preliminarily mounted on a substrate. Therefore, the sensitivity of the specific axial direction corresponding to the tilt direction can be maintained high, and the sensitivity including the other axial directions along the surface of the substrate can be lowered. ^Yu Qiangang's physical quantity sensor, the physical quantity sensor chip is placed on the inclined setting surface, so the package needs a sufficient area or height. Therefore, it is limited to be tightly built into the small portable terminal device by the package as before. [Patent Document 1] JP-A-H09-292408 (Patent Document 2) Japanese Laid-Open Patent Publication No. Hei. Problem] The present invention has been developed in view of the above problems, and its object is to provide a physical quantity sensor for tilting and storing a physical quantity sensor chip in a small and thin package and a lead frame for use therefor. 104873.doc 1280399 [Summary of the Invention] In order to solve the above problems, the lead frame containing the metallic thin plate, and the at least two platform parts, the basin - 5 - ^ ? Physical quantity sensor chip, J: The area is smaller than the physical quantity 礒靡 曰 ^ Spoon figure "The placement surface of this idyllic wafer; the rectangular frame part, 1 surrounds these platform parts; the plural ^ Λ from the frame part to the above platform The direction of the extension is arranged in the vicinity of the platform, and includes a link between the above-mentioned frame and the above-mentioned platform parts, and the lead wires, and the easy-deformation portion. form

=述連結引線’藉由變形而使上述平臺部傾斜，並且： 二量感應器晶片使其載置面於上述框架部之厚度方向 ”述平臺部及上述複數引線之—部分重疊而載置。 於本發明之引線框架中， 上述連結引線係排列於上述框 4部之一邊之上述引绩，·^兮、由2丄，， 運㈣線於该連結引線之中途部可形成易 變形部，其以基準軸線為中 τ 用以使上述平臺部相對於 上述框架部而傾斜。 、 當使用此構造之引線框架而將兩個以上物理量感應器晶 片相互傾斜時，物理量感應器晶片開始載置於各平臺部之 表面。物理量感應器晶片之載置面之—部分，自平臺部突 出’因此與複數引線之-部分重疊配置。繼而，以將框架 部固定之狀態按壓平臺部，藉此易變形部變形，可使平臺 部及物理量感應器晶片以基準軸線為中心，相對於框架部 而傾斜。 此處，由於易變形部形成於連結引線之中途部，因此較 之此易變形部位置而更靠***臺部侧之連結引線之前端 部，與平臺部共同傾斜。即，即使將該連結引線之前端部 104873.doc j28〇399 ::理：感應器晶片配置於引線框架厚度方向上相重疊之 觸)〆、可防止物理量感應器晶片與連結引線相互干擾(接 =’本發明之引線框架中，上述連結引線於通過上述 =中心之中心軸線之線對稱位置，自各平臺部突出一 且、結於上述框架部’並且具有可變形之扭曲部作為上 ::易變形冑’該扭曲部及上述平臺部亦可配置在相對於上 述引線於上述引線框架厚度方向偏離之位置。 依據此構造之引線框架，藉由於固定框架部之狀態下按 ^平臺部’並由於連結於各平臺部之—對連結引線於扭曲 部圍繞基準軸線而扭曲’ @此可使平臺部相對於框架部而 傾斜。 此時，扭曲部及平臺部配置於相對於引線於引線框架厚 度方向偏離之位置，因此即使使物理量感應器晶片於靠近 引線之方向與平臺部共同傾斜，亦可防止物理量感應器晶 片與引線接觸。因此，與物理量感應器晶片之尺寸相比， 可細小引線框架之尺寸’故可減小物理量感應器之尺寸。 於本發明之引線框架中，上述平臺部之表面亦可設置包 含電氣絕緣材料之片狀絕緣薄膜。 使用此構造之引線框架而製造物理量感應器時，物理量 感應器晶片經由絕緣薄膜載置於各平臺部之表面。繼而， 藉由打線接合，將物理量感應器晶片與引線電氣連接。其 後’於固定框架部之狀態按壓平臺部，藉此易變形部產生 變形，可使平臺部及物理量感應器晶片以基準轴線為中 104873.doc 1280399 心，相對於框架部而傾斜。 物理畺感應器晶片與平臺部藉由絕緣薄膜而電氣絕緣， 故物理量感應器晶片與連結於平臺部之連結引線電氣絕 緣。因此’於上述使用打線接合之物理量感應器晶片的電 氣連接中亦可使用連結引線。即，可增加與物理量感應器 晶片可電氣連接之引線數量，而不改變引線框架之尺寸。 於本發明之引線框架中，亦可將各上述平臺部配置於上 述引線框架内側區域中較之其他角部而更接近一個角部之 位置，磁感應器晶片亦可以僅與引線框架一邊所設置之複 數引線重疊的方式而配置。 利用此構造之引線框架製造物理量感應器時，物理量感 應器晶片載置於靠近引線框架之一個角部的平臺部之表 面自物理里感應器晶片之平臺部表面露出之載置面，其 於引線框架厚度方向，與設置於同一邊之複數引線中的一 部分重疊而配置。 此後，藉由打線接合，將物理量感應器晶片與引線電氣 連接。厚度方向上與物理量感應器晶片重疊之引線難以打 線接合。然而，於此構造中，與引線框架内側區域一邊之 中央部上配置平堂部之情形相比較，與物理量感應器晶片 重疊之引線數量減少。因此，可充分確保與物理量感應器 晶片可電氣連接之引線數量，而不改變相對於矩形框架之 引線配置。此電氣連接結束後，將連結引線變形，使平臺 部及物理董感應器晶片相對於引線框架而傾斜。 於此構造之引線框架中，上述引線框架形成為大致正方 104873.doc 1280399 形狀，並以上述兩個平臺部接近位於上述内側區域同一邊 上之兩個角部之方式而配置。 根據此種構造之引線框架，由於將平臺部靠近内側區域 同一邊上而配置，故位於對向於上述一邊之邊側之内側區 域成為剩餘區域，因此可於此剩餘區域重新設置平臺部， 用以載置其他物理量感應器晶片或信號處理LSI等。 再者，於將平臺部配置於引線框架内侧區域之角部之構 造中，上述兩個平臺部亦可配置於上述内側區域之對角線 上。 使用此構造之引線框架，藉由樹脂將平臺部、物理量感 ^器晶片以及引線一體成型時，使用金屬模具夾住框架 部，並且於金屬模具内之樹脂形成空間配置平臺部、物理 里感應器晶片以及引線，以樹脂填滿樹脂形成空間。此時， 矩形狀之内側區域中，熔化之樹脂自他方對角線上之一方 角部向他方角部流入上述樹脂形成空間，上述他方對角線 # 肖作為兩個平臺部排列方向之_方對角線交叉。由於平臺 邛或物理夏感應器晶片未位於該樹脂之流入路徑上，因此 可防止此等平臺部或物理量感應器晶片妨礙溶融樹脂之流 動。 再者，本發明之物理量感應器具有：平臺部，其載置物 理量感應器晶片；複數引線，其配置於該平臺部之周圍， 且包含與平臺部連結之連結引線；易變形部，其形成於上 述連結引線，藉由變形而使上述平臺部傾斜；物理量感應 器晶片，其載置於上述傾斜之平臺部，並使端部於上述引 104873.doc •10- 1280399 線之厚度方向上，與上述複數引線之一部分重疊而配置； 以及成型樹脂，其將上述平臺部、上述複數引線以及上述 物理量感應器晶片一體固定。 根據本發明之物理量感應器，可使物理量感應器晶片傾 斜’而不使引線與物理量感應器晶片相互接觸，因此可實 現物理量感應器之小型化。 [發明之效果] 根據本發明之引線框架，可使物理量感應器晶片於封包 内傾斜而收納之物理量感應器更加小型且薄型。 【實施方式】 (第1實施形態） 圖1至圖7表示本發明之第1實施例。本實施例之磁感應器 (物理里感應器）藉由互相傾斜之兩個磁感應器晶片，測定外 部磁場之方向與尺寸。此磁感應器使用引線框架製造而 成’该引線框架係對包含薄板狀銅材之金屬板實施沖壓加 工及蝕刻加工而形成。 引線框架1如圖1、2所示，具備兩個平臺部7、9，該等用 以配置形成為俯視矩形之板狀之磁感應器晶片（物理量感 應器晶片）3、5，以及框架部11，其支持平臺部7、9。此等 平臺部7、9與框架部U為一體形成。框架部丨丨包含矩形框 部13以及複數引線15、17，其中矩形框部13以包圍平臺部 7、9之方式形成為俯視為矩形之框狀，而複數引線1 $、17 由该矩形框部13向内側突出。引線15與磁感應器晶片3、5 之焊墊（未圖示）電氣連接。引線17(以下亦稱為連結引線Η) 104873.doc 11 1280399 用，將矩形框部13與平臺 氣連接之引線1 5中亦包含 部7、9相互連 自矩形框部13 發揮連結引線之作 結。再者，用於電 之角部突出的引線 兩個平臺部7、9沿矩形框部13之一邊排列配置，其表面 7a、9a分別載置有磁感應器晶片3 八 山 分十憂部7、9之一 端部7b、9b連結於複數連結引線17 发硬数連結引線17突 出於排列此等兩個平臺部7、9之方向。The connecting lead wire is tilted by the deformation of the platform portion, and the two-dimensional sensor wafer has its mounting surface placed in the thickness direction of the frame portion, and the platform portion and the plurality of lead wires are partially overlapped and placed. In the lead frame of the present invention, the connecting lead is arranged on one side of the frame 4, and the second line is formed in the middle of the connecting lead to form a deformable portion. The reference axis is medium τ for tilting the platform portion relative to the frame portion. When two or more physical quantity sensor wafers are tilted to each other using the lead frame of this configuration, the physical quantity sensor wafer starts to be placed The surface of each platform portion, the portion of the mounting surface of the physical quantity sensor chip protrudes from the platform portion, and thus overlaps with the portion of the plurality of leads. Then, the platform portion is pressed in a state where the frame portion is fixed, thereby being easily deformed The deformation of the portion allows the platform portion and the physical quantity sensor wafer to be tilted with respect to the frame portion centering on the reference axis. Here, since the deformable portion is formed in the joint The middle portion of the lead wire is thus inclined closer to the front end portion of the connecting lead on the side of the platform portion than the position of the easily deformable portion, that is, even if the connecting lead is before the end portion 104873.doc j28〇399 :: The sensor chip is disposed in the thickness direction of the lead frame to overlap the contact 〆, which prevents the physical sensor chip and the connecting lead from interfering with each other (in the lead frame of the present invention, the connecting lead is passed through the above-mentioned center) a line symmetrical position of the central axis, protruding from each of the platform portions, and being attached to the frame portion 'and having a deformable twisted portion as an upper:: easily deformable 胄' the twisted portion and the platform portion may also be disposed relative to the lead wire The position of the lead frame is offset in the thickness direction of the lead frame. The lead frame according to the structure is twisted around the reference axis by twisting the connecting lead in the state of the fixed frame portion by the platform portion 'and due to the connection to each of the platform portions ' @ this can tilt the platform portion relative to the frame portion. At this time, the twist portion and the platform portion are disposed thick relative to the lead wire frame The position is deviated, so that even if the physical quantity sensor chip is tilted together with the land portion in the direction close to the lead, the physical quantity sensor wafer can be prevented from coming into contact with the lead. Therefore, the small lead frame can be compared with the size of the physical quantity sensor chip. The size of the physical quantity sensor can be reduced. In the lead frame of the present invention, the surface of the platform portion can also be provided with a sheet-shaped insulating film containing an electrically insulating material. The physical quantity sensor is manufactured using the lead frame of this configuration. The physical quantity sensor wafer is placed on the surface of each of the land portions via an insulating film. Then, the physical quantity sensor wafer is electrically connected to the lead wires by wire bonding. Thereafter, the platform portion is pressed in the state of the fixed frame portion. The deformable portion is deformed so that the platform portion and the physical quantity sensor wafer are inclined with respect to the frame portion with the reference axis being centered at 104873.doc 1280399. The physical sensor wafer and the platform portion are electrically insulated by an insulating film, so that the physical sensor wafer is electrically insulated from the connecting wires connected to the platform portion. Therefore, a connecting lead can also be used in the electrical connection of the above-described physical quantity sensor wafer using wire bonding. That is, the number of leads that can be electrically connected to the physical quantity sensor chip can be increased without changing the size of the lead frame. In the lead frame of the present invention, each of the platform portions may be disposed at a position closer to a corner than the other corners in the inner region of the lead frame, and the magnetic sensor wafer may be disposed only on one side of the lead frame. The multiple leads are arranged in an overlapping manner. When the physical quantity sensor is manufactured by using the lead frame of this configuration, the physical quantity sensor wafer is placed on the surface of the platform portion near one corner of the lead frame from the mounting surface exposed on the surface of the platform portion of the physical sensor wafer, and the lead is placed on the lead The thickness direction of the frame is arranged to overlap with a part of the plurality of leads provided on the same side. Thereafter, the physical quantity sensor wafer is electrically connected to the leads by wire bonding. The leads overlapping the physical quantity sensor wafer in the thickness direction are difficult to wire bond. However, in this configuration, the number of leads overlapping the physical quantity sensor wafer is reduced as compared with the case where the flat portion is disposed on the central portion of one side of the inner side of the lead frame. Therefore, the number of leads electrically connectable to the physical quantity sensor chip can be sufficiently ensured without changing the lead configuration with respect to the rectangular frame. After the electrical connection is completed, the connecting leads are deformed so that the platform portion and the physical sensor wafer are tilted with respect to the lead frame. In the lead frame of this configuration, the lead frame is formed in a substantially square shape of 104873.doc 1280399, and is disposed such that the two land portions are close to the two corner portions on the same side of the inner side region. According to the lead frame having such a configuration, since the land portion is disposed on the same side as the inner side region, the inner region located on the side opposite to the one side becomes the remaining region, so that the platform portion can be newly provided in the remaining region. It is used to mount other physical quantity sensor chips, signal processing LSIs, and the like. Further, in the configuration in which the land portion is disposed at a corner portion of the inner region of the lead frame, the two platform portions may be disposed on a diagonal line of the inner region. When the platform portion, the physical quantity sensor wafer, and the lead wire are integrally molded by the resin using the lead frame of this configuration, the frame portion is sandwiched by the metal mold, and the resin is formed in the metal mold to form a space portion of the platform portion and the physical sensor. The wafer and the lead are filled with a resin to form a space. At this time, in the inner side region of the rectangular shape, the molten resin flows into the resin forming space from one corner of the diagonal line toward the other corner, and the other diagonal line # 肖 is the direction of the arrangement of the two platform portions. The corners intersect. Since the platform crucible or the physical summer sensor wafer is not located on the inflow path of the resin, it is prevented that the platform portion or the physical quantity sensor wafer hinders the flow of the molten resin. Furthermore, the physical quantity sensor of the present invention has a platform portion on which a physical quantity sensor wafer is placed, a plurality of lead wires disposed around the platform portion, and a connection lead connected to the platform portion, and a deformable portion formed. Extending the platform portion by the deformation of the connecting lead; the physical quantity sensor wafer is placed on the inclined platform portion, and the end portion is in the thickness direction of the line 104873.doc • 10 - 1280399 And partially disposed to overlap one of the plurality of lead wires; and a molding resin that integrally fixes the platform portion, the plurality of leads, and the physical quantity sensor wafer. According to the physical quantity sensor of the present invention, the physical quantity sensor wafer can be tilted without the lead wires and the physical quantity sensor wafers being in contact with each other, so that the miniaturization of the physical quantity sensor can be realized. [Effects of the Invention] According to the lead frame of the present invention, the physical quantity sensor in which the physical quantity sensor wafer is tilted and accommodated in the package is made smaller and thinner. [Embodiment] (First Embodiment) Figs. 1 to 7 show a first embodiment of the present invention. The magnetic sensor (physical sensor) of this embodiment measures the direction and size of the external magnetic field by means of two magnetic sensor wafers which are inclined to each other. The magnetic inductor is manufactured using a lead frame, and the lead frame is formed by performing a stamping process and an etching process on a metal plate including a thin plate-shaped copper material. As shown in FIGS. 1 and 2, the lead frame 1 is provided with two platform portions 7, 9 for arranging magnetic sensor wafers (physical quantity sensor wafers) 3, 5 formed in a rectangular shape in plan view, and frame portion 11 It supports the platform parts 7, 9. These platform portions 7, 9 are integrally formed with the frame portion U. The frame portion 丨丨 includes a rectangular frame portion 13 and a plurality of lead wires 15 and 17, wherein the rectangular frame portion 13 is formed in a frame shape that is rectangular in plan view so as to surround the land portions 7 and 9, and the plurality of lead wires 1 and 17 are surrounded by the rectangular frame The portion 13 protrudes inward. The lead 15 is electrically connected to pads (not shown) of the magnetic sensor wafers 3, 5. The lead wire 17 (hereinafter also referred to as a connecting lead wire) 104873.doc 11 1280399, the lead wire 15 connecting the rectangular frame portion 13 and the stage gas is also connected to the rectangular frame portion 13 from the rectangular frame portion 13 Knot. Further, the lead portions of the two corner portions 7 and 9 for projecting the corners of the electric wires are arranged along one side of the rectangular frame portion 13, and the surfaces 7a and 9a are respectively placed with the magnetic sensor wafer 3; One of the end portions 7b and 9b is connected to the plurality of connecting leads 17 and the hard connecting lead 17 protrudes in the direction in which the two land portions 7 and 9 are arranged.

平臺部7、9之表面7a、9a及自位於平臺部7、9侧之連社 引線Π之前端部17a至中途部為止之表面i7b被實施光學^ 刻加工。藉此，連結引線17之前端部17a及平臺部7、9之厚 度薄於連結引線17之基端部17c或下述突出片19、2ι。連結 引線17之前端部17a之表面17b，其與平臺部7、9之表面 9a共為同一平面，並載置磁感應器晶片3、5。 於互相對向之平臺部7、9之他端部7c、9c，分別形成突 出於平臺部7、9之背面7d、9d側的一對突出片19、21。此 等突出片19、21沿各平臺部7、9之寬度方向交互排列配置。 使突出片19、21對於平臺部7、9彎曲之突出片19、21的基 ^。卩亦貫施有上述光學餘刻加工，其厚度與平臺部7、9相 等。 即’突出片19、21之基端部以薄於其他部分之方式形成， 其可變形。因此，可高精度設定突出片丨9、2 1相對於平臺 部7、9之傾斜角度。 此等一對突出片19、21之中途部藉由肋部23而相互連結。 如圖3A及圖3B所示，各突出片19、21之表面19a、21 a位 1 〇4873.doc -12- 1280399 於與平臺部7、9之表面7a、9a同側’遍及其長度方向形成 有V字狀之槽25。此等肋部23及槽25提高突出片19、21之剛 性，當外力施加於突出片19、21前端時，防止突出片19、 21彎曲。 此等突出片19、如圖3A及圖3C所示，係於由金屬製薄 板形成引線框架1之穿孔加工中，由其背面丨9b、2丨b向表面 19a、21a穿通而形成。因此，突出片19、21之背面19b、2ib 側之前端部19c、21c帶有平滑圓弧。 其次，說明使用上述引線框架丨製造磁感應器之方法。 首先如圖1、圖2所示，於平臺部7、9之表面％接著 磁感應器晶片3、5。於此狀態下，各磁感應器晶片3、5以 其-邊與連結引線17長度方向正交之方式配置。各磁感應 器晶片3、5配置於自連結引線17之前端部17&至中途部之區 域，該區域藉由上述光學蝕刻加工形成較薄之厚度。 繼而，藉由導線（未圖示），將以均等間隔配置於磁感應 器晶片3、5表面之焊墊（未圖示）與連結引線17電氣連接。使 平臺部7、9傾斜時，由於自導線與磁感應器晶片3、5之接 合部分至導線與連結引線17之接合部分為止之距離產生變 化，故此導線之材質較好的是柔軟易彎曲。 繼而，形成將磁感應器晶片3、5、平臺部7、8、以及引 線15、17—體固定之樹脂成型部。 即，如圖4所示，於具有凹部以之金屬模具£之表面， _有引線框木1之矩形框部13。此時，矩形框部丨3内側之 引線15、17、平臺部7、9、磁感應器晶片3、5、突出片19、 104873.doc 1280399 21配置於凹部El之上方。於此狀態下，磁感應器晶片3、5， 平臺部7、9，突出片19、21自凹部E1侧朝向上方側依次配 置。 於突出片19、21之上方，設有具備平坦面F1之金屬模具 F，與上述金屬模具E共同夾住引線框架1之矩形框部丨3。於 此引線框架1與金屬模具F之間，***有薄片s，其用以防止 樹脂邊角料附著於引線15，並使金屬模具F與樹脂容易剝 離。The surfaces 7a and 9a of the platform portions 7, 9 and the surface i7b from the front end portion 17a to the intermediate portion of the joint portion 位于 on the side of the platform portions 7 and 9 are optically processed. Thereby, the thickness of the front end portion 17a and the land portions 7 and 9 before the connection lead 17 is thinner than the base end portion 17c of the connection lead 17 or the following protruding pieces 19, 2ι. The surface 17b of the front end portion 17a of the lead wire 17 is connected to the surface 9a of the land portions 7, 9 in the same plane, and the magnetic sensor wafers 3, 5 are placed. A pair of projecting pieces 19, 21 projecting from the side faces 7d, 9d of the platform portions 7, 9 are formed at the other end portions 7c, 9c of the platform portions 7, 9 which face each other. These protruding pieces 19, 21 are alternately arranged along the width direction of each of the platform portions 7, 9. The base of the protruding pieces 19, 21 which are bent by the protruding pieces 19, 21 with respect to the platform portions 7, 9. The optical finishing process described above is applied to the same thickness as the platform portions 7, 9. Namely, the base end portions of the projecting pieces 19, 21 are formed to be thinner than the other portions, which are deformable. Therefore, the inclination angle of the protruding pieces 9 and 2 with respect to the platform portions 7, 9 can be set with high precision. The middle portions of the pair of protruding pieces 19 and 21 are connected to each other by the ribs 23. As shown in FIG. 3A and FIG. 3B, the surfaces 19a and 21a of each of the protruding pieces 19, 21 are 1 〇 4873.doc -12 - 1280399 on the same side as the surfaces 7a, 9a of the platform portions 7, 9 'over the length thereof A groove 25 having a V shape is formed. These ribs 23 and grooves 25 improve the rigidity of the protruding pieces 19, 21, and when the external force is applied to the leading ends of the protruding pieces 19, 21, the protruding pieces 19, 21 are prevented from being bent. As shown in Figs. 3A and 3C, the protruding pieces 19 are formed by piercing the back faces 9b and 2b to the surfaces 19a and 21a in the punching process in which the lead frame 1 is formed of a metal thin plate. Therefore, the front end portions 19c and 21c on the back surface 19b and 2ib side of the protruding pieces 19 and 21 have smooth circular arcs. Next, a method of manufacturing a magnetic inductor using the above lead frame crucible will be described. First, as shown in Figs. 1 and 2, the magnetic sensor wafers 3, 5 are attached to the surface of the land portions 7, 9. In this state, the magnetic sensor wafers 3, 5 are arranged such that their sides are orthogonal to the longitudinal direction of the connecting leads 17. Each of the magnetic sensor wafers 3, 5 is disposed in a region from the end portion 17 & to the intermediate portion of the connecting lead 17, which is formed into a thin thickness by the above optical etching. Then, a bonding pad (not shown) which is disposed on the surfaces of the magnetic sensor wafers 3 and 5 at equal intervals is electrically connected to the connecting lead 17 by a wire (not shown). When the land portions 7 and 9 are inclined, since the distance from the joint portion of the wire to the magnetic sensor wafers 3, 5 to the joint portion of the wire and the connecting wire 17 is changed, the material of the wire is preferably soft and flexible. Then, a resin molded portion in which the magnetic sensor wafers 3, 5, the land portions 7, 8 and the lead wires 15, 17 are integrally fixed is formed. That is, as shown in FIG. 4, on the surface of the metal mold having the concave portion, there is a rectangular frame portion 13 having the lead frame wood 1. At this time, the lead wires 15, 17 on the inner side of the rectangular frame portion 3, the land portions 7, 9, the magnetic sensor wafers 3, 5, and the protruding pieces 19, 104873.doc 1280399 21 are disposed above the concave portion E1. In this state, the magnetic sensor wafers 3, 5, the land portions 7, 9 and the protruding pieces 19, 21 are arranged in order from the concave portion E1 side toward the upper side. A metal mold F having a flat surface F1 is provided above the protruding sheets 19 and 21, and the rectangular frame portion 丨3 of the lead frame 1 is sandwiched by the metal mold E. Between the lead frame 1 and the metal mold F, a sheet s is inserted to prevent the resin scrap from adhering to the lead 15, and the metal mold F and the resin are easily peeled off.

其次，如圖5所示，此等兩個金屬模具e、F夾住矩形框部 13。於是，各突出片19、21之前端部i9c、21c藉由金屬模 具F之平坦面！^而按壓。突出片19、21之剛性藉由肋部以 或V字狀之槽25而補強，故藉由此按壓可防止突出片19、2ι 彎曲。此時，突出片19、21之前端部與薄片8相互接觸，但 接觸之突出片19、21前端部19c、21c形成帶有圓孤之形狀， 因此可防止突出片19、21造成薄片S之破損。 當突出片19、21受到按壓時，連結於各平臺部7、9之連 結引線17之中途部17d產生變形。因此，平臺部7、9以基準 軸線L1為中心，向框架部丨傾斜，該基準軸線u將支持同一 磁感應器晶片3、5之連結引線17之中途部17d相互連接。連 結引線17之中途部17d藉由光學蝕刻形成較薄的厚度，成為 易變，，因此可使平臺部7、9容易傾斜。藉此，搭載於 平S。卩7、9之磁感應器晶片3、5相對於矩形框部13或平土曰 面F1 ’以特定角度傾斜。 〃後，於金屬模具？之平坦面F1按壓突出片19、21之前端 104873.doc -14- 1280399 部19c、21c的狀態下，溶融樹脂射出至金屬模具E、F内， 將磁感應器晶片3、5填入樹脂内部。藉此，如圖6、7所示， 磁感應器晶片3、5於相互傾斜之狀態下，固定於樹脂成型 部27之内部。較好的是，此處使用之樹脂為流動性較高之 材質’以便使磁感應器晶片3、5及平臺部7、9之傾斜角度 不因樹脂之流動而改變。 最後，將矩形框部13切落，分為各引線15、17，至此， 磁感應器30之製造結束。 ® 採用上述方式製造之磁感應器30中設置的磁感應器晶片 3、5，相對於樹脂成型部27之下面27a傾斜。又，相互對向 之磁感應器晶片3、5之一端部3b、5b朝向樹脂成型部27之 上面27c側。磁感應器晶片3之表面3a以磁感應器晶片5之表 面5 a為基準，呈銳角傾斜。即，相對於平臺部9，平臺部7 之角度Θ為銳角。 磁感應器晶月3分別感應於外部磁場之兩個方向的磁性 φ 成分。此等兩個感應方向係沿磁感應器晶片3表面3a相互垂 直之A方向及B方向。 又’磁感應器晶片5感應於外部磁場之兩個方向的磁性成 分。此等兩個感應方向係沿磁感應器晶片5之表面5a相互垂 直之C方向及D方向。 此處’ A及C方向與基準軸線L1平行，且方向互相相反。 B及D方向係與基準軸線L1垂直之方向，且方向互相相反。 包含沿表面3a之A及B方向之A-B平面，以銳角角度e與包 含沿表面5a之C及D方向之C-D平面交差。 104873.doc •15- 1280399 此角度Θ大於〇。，並為9〇◦以下，理論而言，若為大於〇。 之角度’即可測定三雒地磁方位。但實際上，較好的是角 度Θ為20。以上，更好的是3〇。以上。 用於將磁感應器晶片3及5電氣連接於外部之複數引線1 5 的底面15a，自樹脂成型部27之下面27a露出。此引線15之 一端部藉由金屬製導線29而電氣連接於磁感應器晶片3及 5 ’此連接部分填入樹脂成型部27之内部。 用於使平臺部7及9傾斜之連結引線17之中途部17d及前 端部17a，因與平臺部7、9共同傾斜，故被填入樹脂成型部 2 7内。僅連結引線17之基端部17 c之底面17 e由樹脂成型部 27之下面27a露出來。 該磁感應器30例如搭載於攜帶終端裝置内的基板。該攜 ▼終端裝置藉由磁感應器3 〇測定地磁方位，並將該方位顯 示於顯示面板。 上述引線框架1及磁感應器30中，用於傾斜平臺部7、9 之易變形部形成於連結引線17之中途部17d。因此，較之該 易變形部更加靠***臺部7、9側之連結引線17的前端部na 與平臺部7、9共同傾斜。因此，當將磁感應器晶片3及5配 置於該前端部17a並使該等傾斜時，磁感應器晶片3及5與連 結引線17無相互干擾（接觸）。即，可將前端部17&與磁感應 器晶片3、5配置於金屬製薄板厚度方向上重疊之位置:: 此，磁感應H3G可相應小型化。以此，可將磁感應器晶片3 及5傾斜收納於樹脂成型部27内部所規定之小型且薄型封 包内，故可容易實現磁感應器3〇之小型化。 104873.doc 16 1280399 又，磁感應器晶片3及5可恭罢认々τ 士 门汉）J戟置於各平臺部7及9之表面7a 及％’以及連結引線17之前端部17a之表面l7b，因此可將 磁感應器晶片3、5穩定载置於平臺部7、9之表面7&、 此外，藉由光學餘刻，可將平臺部7、9形成為較突出片 19 21更薄之厚度’並且藉由肋部23和乂字狀之槽乃而補強 突出片19、21之剛性’藉此可防止因使平臺部7、9及磁感 應器晶片3、5傾斜之按壓力所造成突出片19、21之臂曲。 因此’可防止由此幫曲所造成平臺部7、9傾斜角度之偏移。 又，藉由上述光學蝕刻，接著磁感應器晶片3、5之平臺 部7、9之表面7a、9a形成凹陷，因此可降低磁感應器晶片3、 5之配置，實現磁感應器3〇之薄型化。 再者，接觸於薄片S之突出片19、21之前端形狀形成為帶 有圓弧之形狀，故可防止突出片19、21造成薄片s破損，並 防止樹脂流出至金屬模具F。因此，可製造出具有正確外觀 形狀之磁感應器30。 於上述實施例中，磁感應器晶片3、5僅被載置於連結弓丨 線17之前端部17a之表面17b，但並非僅限於此，即可將兩 者接著。 又，如圖8所示，平臺部7、9及連結引線17之前端部17a 力^配置於相對於連結引線17基端部17 c，而於金屬製薄板 厚度方向偏離之位置。於此構造中，基準軸線L1之位置亦 與平臺部7、9同樣地，配置於偏離金屬製薄板厚度方向之 位置。 採用此構造時，即使磁感應器晶片3、5配置於超出連結 104873.doc 17 1280399 引線17之前端部17a，進而於厚度方向與連結引線17之基端 部17c重疊之位置時，亦可於使磁感應器晶片3、5傾斜時， 防止磁感應器晶片3、5與連結引線π之基端部i7c之干擾 (接觸）。 再者，除此構造以外，藉由光學蝕刻等，將對向於磁感 應器晶片3、5之連結引線17之基端部i7c的表面切削，形成 凹部17f。根據此構造，可進一步確實防止磁感應器晶片3、 5接觸連結引線17之基端部17c。 •又，平臺部7、9於其表面7a、9a側實施光學蝕刻，形成 車父薄之厚度’但並非限於此。如圖9所示，亦可於平臺部7、 9之底面7d、9d侧實施光學蝕刻。於此構造中，較好的是於 自連結引線17之前端部l7a至中途部17d為止之底面ng及 犬出片19、21基端部之底面亦同樣地實施光學钱刻。 於此構造之情形下，由於連結引線17中途部17d之下面， 树月曰充填區域於厚度方向上增加，因此可確實將樹脂充填 _ 於此部分。又，中途部17d之易變形部填入樹脂成型部之内 部，因此連結引線1 7之邊角料不會自樹脂成型部27之下面 2 7a露出。 又，焊墊係例示於磁感應器晶片3、5之表面均等間隔配 置’但並非僅限於此。如圖1〇所示，焊墊28亦可配置於磁 感應器晶片3、5上基準軸線L1之附近。於基準軸線u之附 近，隨著磁感應器晶片3、5之傾斜而使各焊墊28之高度變 化減少。即，於此構造中，藉由導線29將引線15與焊墊Μ 電氣連接後，可減小使平臺部7、9傾斜時所產生之引線Μ 104873.doc 18 1280399 與焊墊28之相對位置之改變。因此，平臺部7、9傾斜時， 可抑制導線29所產生之張力變化，由此而防止導線29脫離 引線15或焊墊28，或者導線29斷線等現象。 (第2實施形態）Next, as shown in Fig. 5, the two metal molds e, F sandwich the rectangular frame portion 13. Thus, the front ends i9c, 21c of the respective protruding pieces 19, 21 are made of the flat surface of the metal mold F! ^ and press. The rigidity of the protruding pieces 19, 21 is reinforced by the ribs or the V-shaped grooves 25, so that the protruding pieces 19, 2i can be prevented from being bent by this pressing. At this time, the front end portions of the protruding pieces 19, 21 and the sheet 8 are in contact with each other, but the front end portions 19c, 21c of the protruding protruding pieces 19, 21 are formed in a round shape, so that the protruding sheets 19, 21 can be prevented from causing the sheet S. damaged. When the protruding pieces 19 and 21 are pressed, the intermediate portion 17d of the connecting lead 17 connected to each of the land portions 7 and 9 is deformed. Therefore, the platform portions 7, 9 are inclined toward the frame portion 为 centering on the reference axis L1, and the reference axis u connects the intermediate portions 17d of the connecting leads 17 supporting the same magnetic sensor wafers 3, 5 to each other. The middle portion 17d of the connecting lead 17 is formed into a thin thickness by optical etching, and is easily changed. Therefore, the land portions 7 and 9 can be easily inclined. Therefore, it is mounted on the flat S. The magnetic sensor wafers 3, 5 of the crucibles 7, 9 are inclined at a specific angle with respect to the rectangular frame portion 13 or the flat soil surface F1'. After the smashing, in the metal mold? In a state where the flat surface F1 presses the front end 104873.doc -14 - 1280399 portions 19c and 21c of the protruding pieces 19 and 21, the molten resin is ejected into the metal molds E and F, and the magnetic sensor wafers 3 and 5 are filled in the resin. As a result, as shown in Figs. 6 and 7, the magnetic sensor wafers 3 and 5 are fixed to the inside of the resin molded portion 27 while being inclined to each other. Preferably, the resin used herein is a material having a high fluidity so that the inclination angles of the magnetic sensor wafers 3, 5 and the land portions 7, 9 are not changed by the flow of the resin. Finally, the rectangular frame portion 13 is cut and divided into the respective lead wires 15, 17, and the manufacture of the magnetic sensor 30 is completed. The magnetic sensor wafers 3, 5 provided in the magnetic sensor 30 manufactured in the above manner are inclined with respect to the lower surface 27a of the resin molded portion 27. Further, one end portions 3b, 5b of the magnetic sensor wafers 3, 5 facing each other face the upper surface 27c side of the resin molded portion 27. The surface 3a of the magnetic sensor wafer 3 is inclined at an acute angle with reference to the surface 5a of the magnetic sensor wafer 5. That is, the angle Θ of the platform portion 7 is an acute angle with respect to the platform portion 9. The magnetic sensor crystal moon 3 senses the magnetic φ component in two directions of the external magnetic field. These two sensing directions are in the A direction and the B direction which are perpendicular to each other along the surface 3a of the magnetic sensor wafer 3. Further, the magnetic sensor wafer 5 induces a magnetic component in two directions of an external magnetic field. These two sensing directions are in the C direction and the D direction which are perpendicular to each other along the surface 5a of the magnetic sensor wafer 5. Here, the 'A and C directions are parallel to the reference axis L1, and the directions are opposite to each other. The B and D directions are perpendicular to the reference axis L1, and the directions are opposite to each other. The A-B plane including the A and B directions along the surface 3a intersects the C-D plane including the C and D directions along the surface 5a at an acute angle e. 104873.doc •15- 1280399 This angle is greater than 〇. And is below 9〇◦, in theory, if it is greater than 〇. The angle can be measured to determine the geomagnetic orientation of the three axes. In reality, however, it is preferable that the angle Θ is 20. Above, the better is 3〇. the above. The bottom surface 15a of the plurality of leads 15 for electrically connecting the magnetic sensor wafers 3 and 5 to the outside is exposed from the lower surface 27a of the resin molded portion 27. One end portion of the lead wire 15 is electrically connected to the magnetic sensor wafer 3 and 5' by a metal wire 29, and this connection portion is filled in the inside of the resin molded portion 27. The intermediate portion 17d and the front end portion 17a of the connecting lead 17 for inclining the land portions 7 and 9 are inclined together with the land portions 7, 9 so as to be filled in the resin molded portion 27. Only the bottom surface 17 e of the base end portion 17 c of the connection lead 17 is exposed by the lower surface 27a of the resin molded portion 27. The magnetic sensor 30 is mounted, for example, on a substrate in the portable terminal device. The terminal device detects the geomagnetic orientation by the magnetic sensor 3 , and displays the orientation on the display panel. In the lead frame 1 and the magnetic sensor 30, the easily deformable portions for the inclined land portions 7 and 9 are formed in the middle portion 17d of the connecting lead 17. Therefore, the front end portion na of the connecting lead 17 closer to the platform portions 7 and 9 than the deformable portion is inclined together with the land portions 7 and 9. Therefore, when the magnetic sensor wafers 3 and 5 are placed on the front end portion 17a and tilted, the magnetic sensor wafers 3 and 5 and the connection leads 17 do not interfere with each other (contact). That is, the front end portion 17& and the magnetic sensor wafers 3, 5 can be disposed at positions overlapping in the thickness direction of the metal thin plate: Here, the magnetic induction H3G can be correspondingly miniaturized. As a result, the magnetic sensor wafers 3 and 5 can be obliquely housed in a small and thin package defined by the inside of the resin molded portion 27, so that the size of the magnetic sensor 3 can be easily reduced. 104873.doc 16 1280399 Moreover, the magnetic sensor chips 3 and 5 can be used to place the surface 7a and %' of the respective platform portions 7 and 9 and the surface 17b of the end portion 17a before the connecting lead 17 Therefore, the magnetic sensor wafers 3, 5 can be stably placed on the surface 7& of the platform portions 7, 9, and further, by means of optical re-engraving, the platform portions 7, 9 can be formed to be thinner than the protruding sheets 1921. 'And the rigidity of the protruding pieces 19, 21 is reinforced by the ribs 23 and the U-shaped grooves, thereby preventing the protruding pieces from being pressed by the inclination of the platform portions 7, 9 and the magnetic sensor chips 3, 5. 19, 21 arm music. Therefore, it is possible to prevent the inclination of the inclination angle of the platform portions 7, 9 caused by the chord. Further, by the above-described optical etching, the surfaces 7a, 9a of the land portions 7, 9 of the magnetic sensor wafers 3, 5 are recessed, so that the arrangement of the magnetic sensor wafers 3, 5 can be reduced, and the magnetic inductor 3 can be made thinner. Further, the shape of the front end of the protruding pieces 19, 21 which are in contact with the sheet S is formed to have a circular arc shape, so that the protruding sheets 19, 21 can be prevented from being damaged by the sheet s, and the resin can be prevented from flowing out to the metal mold F. Therefore, the magnetic sensor 30 having the correct appearance shape can be manufactured. In the above embodiment, the magnetic sensor wafers 3, 5 are only placed on the surface 17b of the end portion 17a before the bow line 17, but it is not limited thereto, and the two can be followed. Further, as shown in Fig. 8, the front end portions 17a of the platform portions 7, 9 and the connecting leads 17 are disposed at positions offset from the base end portion 17c of the connecting lead 17 in the thickness direction of the metal thin plate. In this configuration, the position of the reference axis L1 is also displaced from the thickness direction of the metal thin plate in the same manner as the land portions 7 and 9. According to this configuration, even if the magnetic sensor wafers 3 and 5 are disposed beyond the end portion 17a of the lead wire 17 of the connection 104873.doc 17 1280399 and further overlapped with the base end portion 17c of the connecting lead 17 in the thickness direction, When the magnetic sensor wafers 3, 5 are tilted, interference (contact) between the magnetic sensor wafers 3, 5 and the base end portion i7c of the connection lead π is prevented. In addition to this configuration, the surface of the proximal end portion i7c of the connecting lead 17 of the magnetic sensor wafers 3, 5 is cut by optical etching or the like to form a concave portion 17f. According to this configuration, it is possible to further surely prevent the magnetic sensor wafers 3, 5 from contacting the base end portion 17c of the connecting lead 17. Further, the plate portions 7, 9 are optically etched on the surfaces 7a, 9a thereof to form the thickness of the thinner's body, but are not limited thereto. As shown in Fig. 9, optical etching can also be performed on the bottom faces 7d, 9d of the land portions 7, 9. In this configuration, it is preferable that the bottom surface ng from the end portion 17a to the intermediate portion 17d of the connecting lead 17 and the bottom surface of the base end portion of the canine sheets 19 and 21 are similarly optically engraved. In the case of this configuration, since the underside of the intermediate portion 17d of the connecting lead 17 is increased in the thickness direction, the resin can be surely filled in this portion. Further, since the easily deformable portion of the intermediate portion 17d is filled in the inner portion of the resin molded portion, the scrap of the connecting lead 17 is not exposed from the lower surface 27a of the resin molded portion 27. Further, the pads are exemplified on the surfaces of the magnetic sensor wafers 3, 5 at equal intervals, but are not limited thereto. As shown in Fig. 1A, the pad 28 may also be disposed in the vicinity of the reference axis L1 of the magnetic sensor wafers 3, 5. In the vicinity of the reference axis u, the height of each of the pads 28 is reduced as the magnetic sensor wafers 3, 5 are tilted. That is, in this configuration, after the lead 15 is electrically connected to the pad 藉 by the wire 29, the relative position of the lead Μ 104873.doc 18 1280399 and the pad 28 which are generated when the land portions 7 and 9 are inclined can be reduced. Change. Therefore, when the platform portions 7, 9 are inclined, the change in the tension generated by the wire 29 can be suppressed, thereby preventing the wire 29 from coming off the lead 15 or the pad 28, or the wire 29 being broken. (Second embodiment)

其次，參照圖11至13，說明本發明之第2實施例。再者， 此第2實施例之引線框架及磁感應器於框架部與平臺部連 結方面，與第丨實施例相異。此處，僅就框架部與平臺部之 連結部分加以說明，與引線框架！或磁感應器3〇之構成要素 相同之部分附以相同符號，省略該說明。 部13相互連結。此連結用引線丨6於通過平臺 軸線L2之線對稱位置，自各平臺部7、9突出 如圖11、12所示，於此引線框架2，藉由自矩形框部η 之角部突出之連結用引線（連結部）16將平臺部7、9與矩形框 部7、9之中心 一對。具體而 言，連結用引線16之一端部16a連結於位於各平臺部7、9一 端部7b、9b側之兩端的側端部’該等各平臺部7、$之—端 部7b、9b位於連結引線17側。 該—端部16a於其側面設有凹狀缺口，以細於連結用引線 16之其他部分之方式而形成。因此，使平臺部厂9傾斜時， 以連結-對端部16a之基準軸線L3為中心，—端部W成為 可fe易扭曲之扭曲部。 、室口R、9及連結用引線16之-端部16a，配置於相對於 連、…引線17之整體，偏離金屬製薄板之厚度方向之位置。 連結引線17之前端部17a與平臺部7、9之一端部几、％以厚 度方向重疊之方式配置。磁感應器晶片3、5，其自此平臺 104873.doc -19- 1280399 4 7、9之表面7a、9a露出於連結引線17側及突出片19、21 侧而配置，但於將平臺部7、9相對於框架部u傾斜以前之 狀態下，其不接觸連結引線17。 位於平臺部7、9底面7d、9d側之突出片19、21之基端部， 藉由光學蝕刻形成有凹狀槽18。突出片19、21之基端部的 厚度尺寸由於該槽1 8而比其他部分薄，容易變形。因此， 可高精度設定突出片19、21相對於平臺部7、9之傾斜角度。 對向於磁感應器晶片3、5之連結引線17之表面17b中，自 前端部17a至中途部17d之間，藉由光學蝕刻，於金屬製薄 板之厚度方向上形成凹陷之凹部20。 使用該引線框架2製造磁感應器時，藉由與第1實施例相 同之金屬模具按壓突出片19、21，使平臺部7、9及磁感應 器晶片3、5相對於框架部U而傾斜。此時，連結用引線16 之一端部16a圍繞基準軸線L3扭曲。又，此時如圖13所示， 對向於連結引線17表面17b之物理量感應器晶片3、5進入凹 砉p 20 。 根據上述引線框架2及磁感應器（物理量感應器）31，於平 臺部7、9傾斜前之狀態下，自平臺部7、9露出而配置之磁 感應器晶片3、5與連結引線17之表面i7b之間形成有縫隙。 因此，即使磁感應器晶片3、5與連結引線17於厚度方向上 重疊，亦可防止於平臺部7、9及磁感應器晶片3、5傾斜時， 磁感應器晶片3、5與連結引線17之干擾（接觸），並可實現磁 感應器3 1之小型化。 又，傾斜之磁感應器晶片3、5之一部分可進入形成於連 104873.doc -20- 1280399 結引線17表面17b之凹部20。因此，無需使平臺部7、9相對 於連結引線17,於金屬製薄板厚度方向偏移過大長度，而 可防止磁感應器晶片3、5與連結引線17之干擾，並可使磁 感應器晶片3、5相對於框架部n較大地傾斜。因此，可實 現磁感應器3 1之薄型化。 再者，於上述實施例中，係於連結引線17中，自前端部 17a至中途部17d為止之部分形成凹部2〇，但並非限於此。 例如，亦可於連結引線17之表面17b的整體形成凹部，即， 使連結引線17之厚度尺寸薄於其他部分。 又，平臺部7、9係連結於連結用引線16或連結引線”， 但並非限於此。如圖14所示，平臺部7、9亦可連結於至少 具有扭曲部之連結用引線〗6。即，平臺部7、9可不連結於 與磁感應器晶片3、5之厚度方向重疊之連結弓丨線17。其中， 為於此情形下，亦可防止與磁感應器晶片3、5之干擾，較 好的是於連結引線17形成自其表面17b凹陷之凹部U。 此外，連結用引線16之扭曲部係連結於平臺部7、9之一 ^ ^ ^ . 9H, # ^ ^ ^ 可°又置於較之一端部7b、9b更偏離突出片19、21側之位置。 P使平至邛7、9旋轉之基準軸線L3亦可自平臺部7、9之 女而邛7b、9b向突出片19、21側偏移。 又，於突出片19、21之基端部形成有凹狀槽“，但並非 :匕右至J使突出片19、21相對於平臺部7、9容易彎 曲即可。即，亦可於突出片19、21之基端部，形成切口， 取代槽1 8。 104873.doc •21 - 1280399 再者，於上述第1及第2實施例中，接觸於薄片s之突出片 、21的刖端部19c、21c係藉由衝壓加工而形成。此突出 片19、21之前端部19c、21c若形成帶圓弧之形狀即可。即， 如圖15所示，亦可於前端部實施彎曲加工，以使突出片、 21剷端部之底面側成為帶凸狀圓弧之形狀。此彎曲加工乾、 好的是，如圖16所示，於使用金屬模具使突出片19、21相 對於平臺部7、9彎曲之同時進行。 又，實施上述彎曲加工時，如圖Π、18所示，亦可於突 出片19、21之前端部19卜21c之表面19a、2U或底面 21b實施光學蝕刻，使前端部19c、21c之厚度尺寸形成為薄 於其他部分。於此構造下，即可輕易彎曲前端部19卜2^。 此外，突出片19、21係形成於相互對向之平臺部7、9之 他端部7c、9c，但並非限於此。突出片19、21若至少突出 於平臺部7、9之底面7d、9d侧即可。 即，如圖19、20所示，亦可形成於使突出片“至料相互 •，向之平臺部7、9之他端部7c、％以及平臺部7、9之側端 部7e、9f。形成於同一平臺部7(9)之突出片41、42(43、44) 以互為90。之角度突出。 又，如圖21、22所示，亦可設置一對突出片45至48，其 形成於平臺部7、9之側端部以、7f、9e、9f，並自侧端部7e、 7f、9e、9f向兩個平臺部7、9排列之方向延伸。較好的是， 將幵y成於相同側端部7e，9e(7f，9f)側之突出片C，47(46， 48) ’於平臺部7、9之寬度方向排列配置。 此外，如圖23至28所示，亦可將平臺部7、9切斷呈大致c 104873.doc -22- 1280399 子狀，於矩形缺口部實施彎曲加工，形成突出片49至56。 於此構造中，如圖23、24所示，突出片49、5〇可突出於 平室部7、9之他端部7c、9c側。又，如圖25、％所示，突 出片51、52亦可突出於平臺部7、9之一端部几、外側。 此外如圖27、28所示，或使形成於相同平臺部7(9)之 兩個突出片53,54(55,56)以互為9〇。之角度而突出。此處， 使-方之突出片53、55突出於平臺部7、9之他端部Μ， 並使他方之突出片54、56突出於平臺部7、9之 9f 〇 於此等構造時，由於突出片49至56未向平臺部7、9之外 方延伸而形成，因此即使磁感應器晶片3、5或平臺部7、9 之面積增大，亦可實現磁感應器之進一步小型化。 如上所述，利用突出片19、21、41至56使平臺部7、9傾 二’可基於作為目標之各平臺部7、9的傾斜角度，藉由 而決定平臺部7、9、突出片19、21、41至56之各部 尺寸。 (t/2 + h0)+L4sinei = L5sin(180〇-ei-e2)...(i) 如圖29所示，於該式（1)中 表千$部7、9之厚度尺寸， h0表不自平臺部7、9傾 η之底面7d、9d為止之二： 之平臺部Η厚度方向之偏:量相對於連結摩 二直=示自基，Μ沿平臺部7、9之表面心 I至犬出片19、21、41至56之基端部為止之 平臺部長声。τς主-aw 1 ^ ^ ^ pm 自突“ 19、2卜41至56之基端部至 】04873.doc -23- 1280399 月"而部為止之突出片長度。再者，式⑴中突出片19、21、 41至56之基端部，表示平臺部7、9之底面^％與突出片 19 21、41至56之底面19b、21b、41b至56b交差之位置。 此外，ei表示平臺部7、9之底面7d、別相對於連結引線 17之底面17e之傾斜角度。又，Θ2表示突出片19、21、41至 56之底面19b，21b，仙至56b相對於平臺部7、9之底㈣、 9d之彎曲角度。 於式（1)中，（t/2+ h0)表示金屬製薄板厚度方向上自連結 引線17之底面17e至基準軸線L1、L3為止之距離，但由於 _相對於L1足夠小（L1 : t= 1〇 : 〇，因此對傾斜角度㈠或 彎曲角度Θ2之值無影響。 使用該式（1)，由突出片長度L5、彎曲角度们計算平臺部 長度L4，結果如下所示。再者，如下所示值均為假設傾斜 角度Θ1為15。、偏移量h〇為〇 mm，平臺部7、9之厚度丨忽略 不計（t= 0 mm)之結果。 例如，於圖19所示之引線框架，其使形成於同一平臺部 7(9)之突出片41、42(43、44)以互為90〇之角度突出，突出 片長度L5為〇·5 mm且彎曲角度Θ2為90。時，平臺部長产L4 為 1 ·87 mm 〇 又’於圖21所示之引線框架中，其具有一對突出片“至 48’該對突出片45至48自平臺部7、9之側端部化、& %、 9f向兩個平臺部7、9排列之方向延伸，當突出片長度以為 〇.7mm，彎曲角度02為12〇。時，平臺部長度L4gi 9imm。 此外，於圖23所示之引線框架中，其具有設置於平臺部 104873.doc -24- 1280399 了、9之内，並突出於平臺部7、 49、5〇, m县…“ 而部7c、9c的突出片 田大出片長度L5為0.5 mm，蠻A & 平臺部長度L4為1.37 _。 度Θ2為120。時’ 再者，如圖19、27所示之引線框架 有複數突出片41至44、53至56，當突；各平堂部7、9設 之平臺部長度L4各不相同時1至44、53至56 之突“長度^ ^出各突“41至 於上述實施例中，平臺部7、 徊廿斗 办成為俯視之大致矩形， 仁並非限於此。平臺部7、9 M o , 至少可使磁感應器晶 接者於表面7a、9a即可。即，平表 士、乇仏 1 十室部7、9例如可形 成為俯視之圓形、橢圓形，亦可 孔洞或網眼形狀。 ^成為貫通於厚度方向之 ^外’平臺部7、9利用突出柄至44、W使其傾斜， :並非限於此。若至少於磁感應器製造結束^，兩個磁 感應裔晶片3、5相互傾斜即可。 再者，如上述構造，於磁感應、5較之基準軸線 L3更加路出於連結引線i 7側之情形下，當傾斜平臺部 7、9時’磁感應器、晶片3、5將向靠近連結引線17之方向移 因此較好的疋於此傾斜時，磁感應器晶片3、5不接 觸連結引線17之方式’調整平臺部7、9表面％處磁感 w器曰曰片3 5之配置，並調整自平臺部7、9之一端部％、 9b露出之磁感應器晶片3、5的長度。 、又，如圖30所示，當平臺部7、9之一端部7b、9b較之基 準軸線LI、L3更加靠近連結引線i 7側之情形下，使平臺部 104873.doc -25- 1280399 7、9傾斜時，一端部几、9b將向靠近樹脂成型部27之下面 27a侧之方向而移動。因此，於此傾斜時，較好的是以平臺 部7、9之一端部7b、9b不接觸下面2乃之方式，調整沿平臺 部7、9表面7a、9a自基準軸線L1、L3至一端部几、％為止 之平臺部7、9之長度。 再者，如上所述，對於自平臺部7、9一端部7b、9b露出 之磁感應器晶片3、5的長度調整，亦適用於磁感應器晶片 3、5與連結引線17於厚度方向不重疊之情形。即，例如， 於磁感應器晶片3、5較之基準軸線LI、L3更加露出於引線 15側之情形下，當傾斜平臺部7、9時，磁感應器晶片3、$ 將向靠近連結引線27下面側27a側之方向而移動。因此，較 好的是於此傾斜時，以磁感應器晶片3、5之端部3c、兄不 接觸樹脂成型部27之下面27a之方式，調整沿平臺部7、9之 表面7a、9a自一端部7b、9b露出之磁感應器晶片3、5的長 度。 又’於上述實施例中，以互相平行之基準軸線L1、乙3為 中^ 使兩個磁感應晶片3、5分別傾斜’但並非限於此。 例如’亦可以相互垂直之基準軸線為中心，使兩個磁感應 器晶片3、5分別傾斜。此時，兩個磁感應器晶片3、5之互 相垂直之兩個感應方向（例如圖6中之A、D方向）形成平行於 樹脂成型部27之下面27a之平面，因此可高精度測定沿下面 2 7 a之磁性。 (第3實施形態） 以下，說明本發明之第3實施例。 104873.doc -26- 1280399 如圖31、32所示，引線框架1〇1具備··兩個平臺部1〇7、 109，該等用於配置形成价視矩形板狀之磁感應器晶片（物 理量感應器晶片）1〇3、105 ;框架部11卜其支持平臺部1〇7、 109 ;以及連結部119、121，其將各平臺部1〇7、1〇9與框架 部111連結。此等平臺部107、1〇9、框架部lu及連結部119、 121形成為一體。框架部}丨丨具備：矩形框部丨丨3，其以包圍 平臺部107、109之方式形成為俯視之矩形框狀；以及複數 引線11 5、11 7 ’其自此矩形框部113向内側突出。連結部 119、121將各平臺部107、1〇9與引線117(本實施例每3個為 一組）連結。 引線115、117係與磁感應器晶片1〇3、ι〇5之焊墊（未圖示） 電氣連接者，該等互相分開配置。兩個平臺部丨〇7、1 〇9沿 矩形框部113之一邊排列配置。連結於平臺部107、109之引 線117於兩個平臺部1〇7、1〇9之排列方向延伸。連結於各平 臺部107、1〇9之引線in於相向之方向延伸。 各平臺部107、109及連結部119、121包含由各引線117之 前端延伸出來之複數延長引線123、125，各延長引線123、 125互相分開。於互相對向之延長引線123、125之前端，形 成有突出於平臺部107、1〇9之突出引線127、129。此等突 出引線127、129與連結於各平臺部107、109之引線117形成 為一體。又，於平臺部1〇7、1〇9載置有磁感應器晶片1〇3、 105之狀悲下’突出引線127、129與磁感應器晶片103、105 不重疊。 此等延長引線123、125及突出引線127、129之表面123a、 104873.doc -27· 1280399 125a、127a、129a經光學餘刻，平臺部IQ?、109及連結部 119、121之厚度形成為較之引線117或下述突出片更薄之厚 度。 各延長引線123、125之表面123a、125a中，於相當於各 平臺部107、109之位置，分別配置薄片狀絕緣薄膜131、ι33 各1片’即’各絕緣薄膜131、133跨複數延長引線123、125 而配置。此絕緣薄膜131、133由電氣絕緣材料而形成。 此絕緣薄膜13 1、13 3之表面及底面，預先形成有接著層 (未圖示）。此接著層形成於絕緣薄膜13卜133之兩面，用於 接著平臺部107、109及磁感應器晶片103、1〇5。接著層具 有下述功能中任一者：接著後可再次黏貼之臨時接著功 月匕’或者接著後不可再次黏貼之永久接著功能。各絕緣薄 膜131、133黏貼於平臺部107、丨〇9。於此狀態不，可將磁 感應器晶片103、105經由絕緣薄膜131、133而接著於平臺 部 107、109之表面 123a、125a。 於互相對向之突出引線127、129之前端，分別形成有突 出於各延長引線123、125之底面123d、125d侧之突出片 135、137 〇 為使突出片135、137相對於延長引線123、125或突出引 線^7、139而彎曲，突出片135、137之基端部經光學蝕刻， 與平臺部107、109成為同等厚度。即，突出片135、137之 基端部形成為薄於其他部分而可變形。因此，可高精度設 定大出片135、137相對於平臺部1〇7、1〇9之傾斜角度。 下述’參照圖35說明使用上述引線框架101製造磁感應器 104873 .doc -28- 1280399 之方法。 首先，將磁感應器晶片103、105經由絕緣薄膜131、Π3 而接著於平臺部1〇7、109之表面123a、。繼而，將導 線138連接，使配置於磁感應器晶片103、1〇5表面之焊墊（未 圖示）與引線115、117電氣連接。又，一方磁感應器晶片1〇3 之丈干墊與犬出引線129之表面129a之間同樣地經由導線138 而連接’該突出引線129位於配置有他方磁感應器晶片ι〇5 之平臺部9側。 此時’同一引線117與兩個磁感應器晶片103、1〇5電氣連 接’但該引線117例如作為接地電極等，兩個磁感應器晶片 103、105共用之電極而使用。 再者’於平臺部107、109傾斜之階段，自磁感應器晶片 1 03、1 05之接合部分至引線115、11 7之接合部分之距離產 生變化，因此較好的是，該導線138之材質柔軟易彎曲。 繼而’形成將磁感應器晶片1〇3、1〇5、平臺部1〇7、109、 以及引線115、117 —體固定之樹脂成型部。 即，首先如圖33所示，於具有凹部E101之金屬模具E之表 面E1 02，配置引線框架1 〇 1之矩形框部丨丨3。此時，矩形框 部113内側之引線115、117、平臺部1〇7、109、磁感應器晶 片103、105、突出片135、137配置於凹部E 1〇 1之上方。又， 自凹部E101側朝向上方，依次配置有磁感應器晶片103、 105，平臺部107、109，以及突出片135、137。 於突出片135、137之上方，配置有具備平坦面1^0!之金 屬模具F，與上述金屬模具E共同夾住引線框架1〇1之矩形框 104873.doc -29- 1280399 部 113。 如圖34所示，藉由此等上下一對金屬模具E、F夾住矩形 框部113時，金屬模具F之平坦面F101按壓各突出片135、137 之前端部135a、137a。此時，連結於各平臺部1〇7、1〇9之 連結部119、121產生變形，以將各連結部119、121相互連 接之基準軸線L101為中心，使平臺部1〇7、1〇9相對於各引 線117傾斜。此處，連結部119、121藉由光學蝕刻形成較薄 之厚度，成為容易變形之易變形部，因此平臺部丨〇7、i 〇9 傾斜。藉此，磁感應器晶片103、1〇5與平臺部107、1〇9共 同相對於矩形框部113或平坦面F101，以特定角度而傾斜。 其後，於金屬模具F之平坦面F101按壓突出片135、137 之前端部135a、137a的狀態下，溶融樹脂射出至金屬模具 E、E内’並將磁感應器晶片1 〇3、105填入樹脂内部。因此， 如圖35、36所示，磁感應器晶片1〇3、1〇5於相互傾斜之狀 態下，固定於樹脂成型部141之内部。 再者，此處使用之樹脂較好的是，使用流動性較高之材 質’以使磁感應器晶片103、105及平臺部1〇7、1〇9之傾斜 角度不因樹脂流動而改變。 最後，將矩形框部113切落，分為各引線115、117，使其 電氣分離，至此，磁感應器140之製造結束。 以如上方式所製造之磁感應器140中，如圖36所示，具有 與第1實施例中之說明相同的磁感應器晶片103、1 〇5之配置 關係。此外，磁感應器140具有與第1實施例同樣之功能。 此外’於上述引線框架101及磁感應器140，磁感應器晶 104873.doc -30- 1280399 片103、105與平臺部1〇7、i〇9之間設置有絕緣薄膜13][、 133 ’故磁感應器晶片1〇3、ι〇5與連結於平臺部1〇7、ι〇9 之引線11 7電氣絕緣。因此，不僅可使用引線丨丨5，亦可使 用構成平臺部1〇7、109之引線117，藉由上述打線接合而將 磁感應器晶片1 〇3、1 〇5電氣連接。即，可增加可與磁感應 器晶片103、105電氣連結之引線數量，而不會導致因增加 引線115之數量而使引線框架1 〇丨之尺寸增大。 即，於第1實施例中，與平臺部7、9連結所使用之引線17 可用於本實施例中與磁感應器晶片103、105之電氣連接。 因此，相對於磁感應器晶片3、5，可執行更多輸入輸出， 結果可提供高功能之磁感應器40。 又，亦無需於框架部111另外設置與平臺部1〇7、1〇9之連 結專用引線。與設置連結專用引線之情形相比，可縮小包 圍平臺部107、109之框架部ni的尺寸，故可實現磁感應器 4 0的小型化。 又，一方磁感應器晶片103之焊墊與突出引線129之表面 129a之間接合有導線138，可將同一引線117電氣連接於兩 個磁感應器晶片103、105，上述突出引線129位於搭载他方 磁感應器晶片105之平臺部1〇9。藉此，可減少用於與磁感 應器晶片103、105電氣連結之引線117之數量，故可實現磁 感應器140之進一步小型化。 此外，當平臺部107、1〇9及磁感應器晶片1〇3、1〇5以基 準軸線L101為中心，相對於框架部ln傾斜時，一方磁感應 器晶片103之一端部103b與他方磁感應器晶片1〇5側之突出 104873.doc -31 - 1280399 引線129間的距離不會產生太大變化。因此，可使連接於突 出引線129之導線138形成為較短，因此可降低磁感應器140 之製造成本。 又’由於將平臺部107、1〇9及連結部119、121以與引線 Π7同樣形狀之延長引線123、125而形成，故可簡化引線框 架101之形狀。因此，可減小引線框架101或降低磁感應器 140的製造成本。 I 此外，使用具有接著層之絕緣薄膜131、133，將磁感應 器晶片103、105接著於平臺部1〇7、ι〇9之表面123a、125a， 故與先前塗布接著劑之情形相比，可易於提高接著層之厚 度精度。因此，即可抑制由於接著劑之厚度不均，而造成 磁感應器晶片103、105相對於平臺部1〇7、1〇9之表面123a、 125a之傾斜。 又，於平臺部107、1〇9與磁感應器晶片1〇3、1〇5之接著 時使用液狀接著劑狀態下，液體可能會滴落而附著於引線 _ 117和突出引線127、129之表面127a、129a。本實施例中， 因使用具有接著層之絕緣薄膜131、133，故接著劑不會附 著於引線117或突出引線127、129之表面。因此，可易於製 造磁感應器4 0。 再者，於上述實施例中，例示有藉由導線38而將連接於 平臺部⑽之引線117與搭载於其他平臺部iq7之磁感應器 晶片1〇3電氣連接，但並非限於此。例如，亦可如圖37、％ 所示，藉由導線139將：搭截於夂巫吉如 ^ ?口戰於各千臺部107、109之磁感應 器晶片103、1 05，與自同一孚烏都 十至4延伸之各突出引線126、 104873.doc -32- 1280399 128之間電氣連接。此等突出引線126、128形成於各延長引 線123、125前端之與磁感應器晶片1〇3、ι〇5不重疊之區域。 於此構造中，藉由打線接合將各突出引線126、128與磁 感應器晶片103、105電氣連接後，使平臺部107、109相對 於引線117傾斜時，各延長引線123、125與各突出引線126、 128之位置關係無改變。因此，可確實防止磁感應器晶片 103、105與突出引線126、128之間所連接的導線139變形。 因此’可預先縮短此導線139之長度，故可降低磁感應器之 製造成本。 又，物理量感應器晶片103、1〇5可與構成平臺部107、109 之複數突出引線126、128電氣連接，故可進一步增加可與 磁感應器晶片103、105電氣連接之引線數量。即，由於將 連接於平臺部107、109之複數引線117用於與各磁感應器晶 片103、105之電氣連接，故可實現磁感應器之進一步小型 化。 又’於上述第3實施例中，延長引線123、125全部作為平 臺部107、109而發揮功能，但亦可設置不發揮平臺部1〇7、 109功能之延長引線。 即，例如圖37、3 8所示，引線框架146具有第1引線143(與 圖31所示引線117同等），其連結於形成平臺部1〇7、ι〇9之 延長引線123、125。再者，引線框架146具有第2引線144， 其與引線143共同沿基準軸線L1 〇1而排列。於引線144形成 有自其前端延伸之鄰接引線145。 鄰接引線145與延長引線123、125大致平行地間隔配置， 104873.doc -33- 1280399 長度大約等於延長引線123加上突出引線126之長度。於鄰 接引線145之前端，形成有與突出片135、Π7同樣之突出片 147，該突出片135、137形成於突出引線126、128前端。此 鄰接引線145與延長引線123、125同樣地，可以基準軸線 L1 01為中心，相對於各第2引線〗44而彎曲傾斜。即，鄰接 引線145可以相同方向及傾斜角度傾斜於延長引線η〕、 125 〇 使用此引線框架146製造磁感應器時，首先藉由打線接合 將磁感應器晶片103、1〇5與鄰接引線145電氣連接。其後， 以金屬模具按壓突出片147，藉此使延長引線123、US及鄰 接引線145傾斜於同一方向。此時，鄰接引線45與延長引線 23、25之相對距離保持固定。即，可使此導線148之長度形 成為較短，而並不使電氣連接磁感應器晶片ι〇3、1〇5與鄰 接引線145之導線148變形。目此，可降低磁感應器之製造 成本。 又’由於鄰接引線145可以相同傾斜角度傾斜於平臺部 U)7、Η)9,故可於平臺部1〇7、1〇9搭載大於磁感應器晶片 103、105之晶片。即，更大之晶片可藉由鄰接引線⑷而支 持。因此’無需對應於磁感應器晶片之尺寸而改變引線框 架146之設計’故此引線框架146可廣泛使用。此時，較好 的是於磁感應器晶片與連結引線145之間亦設置絕緣薄膜 131 、 133 〇 此外’連結引線145與延長引線123、125形狀相同，故此 引線框架4 6容易製造。 104873.doc -34- 1280399 又’於上述實施例之引線框架146中，以互相平行之基準 轴線U 01為中心’將兩個平臺部107、109傾斜地設計，但 並非限於此。例如，如圖3 9所示，亦可以互相垂直之基準 轴線L1 0 1、L102為中心，將兩個平臺部1〇7、；1〇9傾斜地設 汁。於此構造中’形成各平臺部107、109之引線117互相垂 直。此時，兩個磁感應器晶片1〇3、1〇5之互相垂直之兩個 感應方向（A方向與C方向）配置於與樹脂成型部ι41之下面 141a相平行之平面，因此可高精度地測定沿下面ΐ4ι&之磁 性。 又’於圖39所示構造中，兩個磁感應器晶片丨〇3、1 〇5沿 矩形框部113—方之對角線L1〇3而排列。根據此構造，藉由 樹脂將平臺部107、1〇9、磁感應器晶片103、105以及引線 115、117—體成型時，溶融樹脂可順利流動。 即，使溶融樹脂流入藉由金屬模具E、F所形成之樹脂形 成空間’开> 成樹脂成型部14 i時，溶融樹脂自矩形框部1 i 3 之一方角部113a向他方角部113b側流入，因此平臺部1〇7、 109或磁感應器晶片1〇3、1〇5不會妨礙此溶融樹脂之流動， 上述矩形框部113位於與對角線L1〇3交叉之對角線L1〇4上。 因此，溶融樹脂可順利自一方角部丨13a到達他方角部 113b，故可確實防止樹脂充填之不良。又，亦可防止由於 溶融樹脂之流動，平臺部1〇7、109或磁感應器晶片ι〇3、1〇5 受到流體壓力，造成該等傾斜角度之變化。結果，亦可高 精度設定磁感應器晶片103、105之傾斜角度。 又’於此貫施例中’與形成平臺部1 〇7、1 之引線1工7 104873.doc -35- 1280399 共同排列之引線115之前端，可設置與圖37中說明之鄰接引 線145同樣的引線。 又，有例示使用表面及底面形成接著層之絕緣薄膜131、 133，但不考慮接著層厚度尺寸時不限於此，亦可使用接著 劑，將絕緣薄膜將平臺部107、1〇9及磁感應器晶片1〇3、1〇5 接著。 此外，突出片135、137、147並非限於形成於相互對向之 平臺部107、或鄰接引線145之端部，若至少突出於平臺 部107、109之底面123d、125d側即可。 又，平臺部107、109或鄰接引線145利用突出片135、137、 147而使其傾斜，但並非限於此。至少於磁感應器14〇製造 、、、口束之卩白#又，兩個磁感應器晶片1 、1Μ或隣接引線1Μ 採用其他方法而傾斜即可。 (第4實施形態） 自圖40至圖45表示本發明之第4實施例。此實施例之磁感 φ 應器（物理量感應器）與上述實施例同樣地，係藉由相互傾斜 之兩個磁感應器晶片而測定外部磁場之方向及尺寸者，並 且係使用引線框架製造而成者，該引線框架係對包含薄板 狀銅材等之金屬板實施壓制加工及蝕刻加工而形成。 引線框架201如圖40、41所示，具備··兩個平臺部2〇7、 2〇9,該等形成為俯視矩形板狀，用於配置磁感應器晶片（物 理量感應器）203、205;以及框架部2U，其支持平臺部2〇7、 209。此等平臺部207、209與框架部211形成為一體。框架 部2U包含··矩形框部213，其以包圍平臺部2〇7、2〇9之方 104873.doc -36- 1280399 式，形成為俯視大致正方形之框狀；複數引線215、216， 其自該矩形框部213之内側區域S201之各邊213a至2 13d垂 直突出於内側，以及連結引線（連結部）217，其自内側區域 S201之各角部213e至213h向内側突出。 引線215、216於内側區域S201之各邊213a至213d分別設 置複數根（圖中例示各7根）。引線2 1 5、216用於與磁感應器 晶片203、205之焊墊（未圖示）電氣連接而設。再者，為避免 此引線21 5、216與下述連結引線21 7之接觸，因此僅將其設 置於内側區域S201各邊213a至213d之中途部，而未設置於 各邊213a至213d之端部。内側區域S201之角部213e至213h 附近為未配置引線215、126之非設置區域S202至S205。 連結引線21 7係將平臺部207、209與矩形框部213連結之 吊線。連結引線217之一端部217a連結於位於各平臺部 207、209之一端部207a、209a之兩端的側端部。此處，各 平臺部207、209之側端部係指與排列兩個平臺部207、209 之方向相垂直之各平臺部207、209之端部。於連結引線217 之一端部217a，其側面設有凹狀缺口，形成為較之其他部 分更細。當各平臺部2〇7、209以軸線L201為中心彎曲傾斜 時’此缺口成為可易變形之扭曲部，上述軸線L2〇丨沿内側 區域S201相互平行之兩條邊213a、213c。 兩個平臺部207、209沿内側區域S201之一邊2 13d排列配 置。又，各平臺部207、209位於相對於引線215、216於金 屬製薄板（引線框）之厚度方向偏離之位置。平臺部2〇7、2〇9 之表面207b、209b以分別載置磁感應器晶片203、205之方 104873.doc -37- 1280399 式形成為俯視大致矩形狀。此等兩個平臺部207、209分別 配置於較之非設置區域S203、S204更加靠近非設置區域 S202、S205之位置，其表面207b、209b小於磁感應器晶月 203、205之載置面。 自鄰接於平臺部207、209—端部207a、209a之引線215之 前端部215a至中途部為止之表面215b上，藉由光學蝕刻形 成有凹部220。即，引線215之前端部215a形成之厚度薄於 位於矩形框部213側之引線215之基端部215c。 於平堂部207、209之他端部207c、209c，分別形成有突 出於平臺部207、209之底面207d、209d側之一對突出片 219、221。此專突出片219、221設為用以使平臺部207、209 傾斜。平臺部207之突出片219與平臺部209之突出片221相 互對向。為使各平臺部207、209穩定傾斜，較好的是增大 形成於各平臺部207、209之一對突出片219、221的相互間 隔。 又’為使各平臺部207、209之傾斜角度穩定，業者希望 增加一對突出片219、221之前端部之寬度。藉此，由於各 平臺部207、209傾斜時，受到按壓力之前端部面積變大， 因此應力緩和而可防止突出片219、221之變形，故平臺部 207、209之傾斜穩定。具體而言，若使一對突出片219、221 具有更寬之寬度即可，而非圖示之棒狀。或者亦可將各突 出片219、221之前端部彎折成矩形狀。 由於兩個平臺部207、209靠近内側區域同一邊 203d側而配置，因此位於與該邊2〇3d對向之邊2〇扑側之内 104873.doc -38- 1280399 側區域S201成為剩餘區域。於此剩餘區域，形成連結於連 結引線21 7之大致呈矩形狀之輔助平臺部223。 此輔助平臺部223如圖42所示，與平臺部207、209同樣 地，位於偏離金屬製薄板（引線框架201)厚度方向之位置。 輔助平臺部223形成有扭曲部217b以及一對突出部225，該 等用以使輔助平臺部223以與上述軸線L201垂直之軸線 L202為中心而傾斜。於此輔助平臺部223之表面223a，載置 有與上述相同之磁感應器晶片或加速度感應器晶片、溫度 感應器晶片、以及信號處理LSI等半導體晶片227。此半導 體晶片227與配置於其厨圍之引線216電氣連接。 其次，說明使用上述引線框架20 1製造磁感應器之方法。 如圖40至圖42所示，首先將磁感應器晶片203、205及半 導體晶片227接著於平臺部207、209及辅助平臺部223之表 面207b、209b、223a。各磁感應器晶片203、205以其各邊 平行於内側區域S201之各邊213a至213d之方式，靠近非設 置區域S202、S205而配置。又，各磁感應器晶片203、205 由平臺部207、209之表面207b、209b露出，但此露出部分 之配置方式為：，其與設置於内側區域S201之邊213a、213c 的複數引線215、216中，位於非設置區域S202、S205側之 複數引線21 5(圖中例示4根）重疊。如圖41所示，平臺部2〇7、 209相對於引線21 5偏離金屬製薄板（引線框架2〇1)之厚度方 向，因此磁感應器晶片203、205與引線21 5未接觸。 各磁感應器晶片203、205配置於自引線215前端部215a 至中途部之區域，該區域藉由上述光學蝕刻形成較薄之厚 104873.doc -39- 1280399 度。又，各磁感應器晶片203、205以與引線216不重疊之方 式配置，該引線216沿平臺部207、209之排列方向（邊213d) 而排列。 其次，將磁感應器晶片203、205及半導體晶片227之表面 所配置之烊墊（未圖示），以及與磁感應器晶片203、205不重 璺之引線216 ’藉由導線（未圖示）而電氣連接。再者，於使 下述平臺部207、209及辅助平臺部223傾斜之階段，磁感應 器晶片203、205及半導體晶片227之接合部分、以及引線216 之接合部分的位置關係會產生變化，故較好的是此接線材 質柔軟易彎曲。 繼而，形成將磁感應器晶片203、205、半導體晶片227、 平臺部207、209、辅助平臺部223以及引線215、216固定為 一體之樹脂成型部（封包）。 即，如圖43所示，於具有凹部E201之金屬模具E之表面 E202，配置引線框架201之矩形框部213。此時，矩形框部 2 13内側之引線21 5、216、平臺部207、209、磁感應器晶片 203、205、以及突出片219、221配置於凹部E201之上方。 即，於此狀態下，磁感應器晶片203、205，平臺部207、209， 突出片219、221自凹部E2〇l朝向上方側依次配置。 於突出片219、221之上方，配置有具有平坦面F2〇i之金 屬模具F，與上述金屬模具E共同夾住引線框架201之矩形框 部 2 1 3。 如圖44所示’若此等一對金屬模具£、ρ夾住矩形框部21 3 時’則金屬模具F之平坦面F201按壓各突出片219、221。藉 104873.doc -40- 1280399 由此按壓力，連結引線21 7之一端部217a以軸線L201為中心 扭距，而使平臺部2 〇 7、2 0 9傾斜。此時，對向於引線2 1 5 表面215b之磁感應器晶片203、205之一端部2〇3a、205a進 入凹部220。藉此，磁感應器晶片203、205與平臺部207、 209共同相對於矩形框部213或平坦面F2〇1，以特定角度傾 斜。 輔助平臺部223，其與平臺部207、209同樣地，因金屬模 具F之平坦面F2〇l按壓突出片225，故相對於矩形框部21 3 或平坦面F201，以特定角度傾斜。 其後，於金屬模具F之平坦面F201按壓突出片219、221 之狀態下’溶融樹脂射出至由金屬模具E、F之凹部E2〇 1及 平坦面F201所形成之樹脂形成空間。藉由此溶融樹脂，形 成將磁感應器晶片2 0 3、2 0 5填入樹脂内部之樹脂成型部。 當樹脂固化時，如圖45至47所示，磁感應器晶片203、205 於相互傾斜之狀態下，固定於樹脂成型部（封包）229之内 部。此處使用之樹脂較好的是流動性較高之材質，以便使 磁感應器晶片203、205及半導體晶片227之傾斜角度不會因 樹脂流動而變化。 最後’將矩形框部213切落，使引線215、216及連結引線 2 17各自分開，至此，磁感應器23〇之製造結束。 採用如上方法所製造之磁感應器23 0之樹脂成型部229， 其形成與上述矩形框部213同樣之俯視大致矩形狀。引線 215、216自内側區域S2〇1之各邊2293至229§向樹脂成型部 229之内側延伸，該内側區域S201藉由樹脂成型部229所劃 104873.doc •41 - 1280399 分。此等引線215、216未設置於位於内側區域S201之角部 之非設置區域S202至S205。 引線216之底面216a露出於樹脂成型部229之下面229a 側。此等引線216之一端部藉由金屬製導線（未圖示）而電氣 連接於磁感應器晶片203、205及半導體晶片227，彼等連接 部分及導線填入於樹脂成型部229之内部。 參照圖46可知，磁感應器晶片203、205及半導體晶片227 _ 相對於樹脂成型部229之下面229a傾斜。相互對向之磁感應 器晶片203、205之他端部203b、205b面朝向樹脂成型部229 之上面2 2 9 c側。磁感應器晶片2 0 3之表面2 0 3 a以磁感應器晶 片205之表面205a為基準，銳角傾斜。即，平臺部207相對 於平臺部2〇9之角度Θ為銳角。 因此，磁感應器晶片203、205之感應方向與使用圖7說明 之本發明第1實施例相同。此外，A_B平面相對於c_d平面 所形成之角度Θ，理論而言，若大於〇。且為9〇。以下，即可 _ 測定三維地磁方位，但實際上與第1實施例同樣地，較好的 是20。以上，更好的是3〇。以上。 此磁感應器330與第1實施例之磁感應器3〇同樣地，例如 可搭載於攜帶終端裝置内之基板，檢測出地磁方位。 根據上述引線框架201及磁感應器23〇，磁感應器晶片 203、205之一部分與引線215重疊配置，故可實現磁感應器 230之小型化。 又，磁感應器晶片203、205分別靠近内侧區域之一個角 部，即非設置區域S202、S205，僅與自内側區域82〇1之一 104873.doc •42- 1280399 邊213a、213c突出之引線15重疊配置。因此，與於内側區 域S201之一邊213a、213c之中央部配置平臺部2〇7、2〇9或 磁感應器晶片2 0 3、2 0 5之情形相比，與磁感鹿晶片2 〇 3、 205重疊之引線數量減少。因此，無需改變相對於矩形框架 213之引線215、216之配置’即可充分確保可與磁感應器晶 片203、205電氣連接之引線216之數量。因此，相對於磁感 應器晶片203、205，可進行眾多信號之輸入輸出，故可提 供高功能之磁感應器230。 此外，由於無需改變相對於矩形框部213之引線21 5、216 之配置’因此可容易製造低成本咼功能之磁感應器〇。 又’由於將兩個平臺部207、209或磁感應器晶片203、205 靠近於内側區域S201之同一邊213d、229g而配置，故可於 矩形框部2 13内側區域S201之剩餘區域另行配置辅助平臺 部223或半導體晶片227，因此可不改變矩形框部213或樹脂 成型部229之尺寸’即可提供更高功能之磁感應器23〇。 又’傾斜之磁感應器晶片203、205可填入形成於引線215 之表面2l5b之凹部220，故無需對引線215延長金屬製薄板 厚度方向上平臺部207、209偏移之長度，即可防止磁感應 器晶片203、205與引線21 5之接觸，以此可使磁感應器晶片 203、205相對於框架部211較大傾斜。因此，亦可實現磁感 應器23 0之薄型化。 再者’於上述實施形態中，係於輔助平臺部223設置突出 片225 ’但並非限於此。使辅助平臺部223至少於形成樹脂 成型部29之前，相對於框架部丨丨傾斜即可。 104873.doc -43- 1280399 又，輔助平臺部223當所載置之半導體晶片227係溫度感 應器晶片或信號處理LSI時，無需將其傾斜。此時，無需突 出片225及連結引線217。 其次，參照圖48,說明本發明之第5實施例。再者，此第 5實施例之引線框架及磁感應器與第4實施例相比，平臺部 及磁感應器晶片相對於框架部之位置不同。此處，僅就平 臺部與磁感應器晶片之配置加以說明，與引線框架2〇1或磁 感應器2 3 0之構成要素相同之部分附以相同符號，省略該說 明。 於此實施例之引線框架23 1及磁感應器中，兩假平臺部 207、209及磁感應器晶片203、205於内侧區域S201之對角 線L203上排列配置。各平臺部207、209靠近位於對角線L203 上之角部，即非設置區域S202、S204而配置。 使用此引線框架231製造磁感應器時，由與第4實施例同 樣之金屬模具夾住矩形框部213之狀態下，將溶融樹脂射出 至藉由金屬模具E、F之凹部E201及平坦面F201所劃分之樹 脂形成空間，形成將磁感應器晶片203、205填入樹脂内部 之樹脂成型部229。此溶融樹脂由閘門Μ射出，流向位於該 一方角部213h之對角的他方角部213 f側，該閘門Μ設置於矩 形框部213之一方角部21311，該矩形框部213位於矩形狀内 側區域S201中與一方對角線L2〇3交叉之他方對角線L204 上。 再者，上述樹脂形成空間相當於藉由樹脂成型部229所劃 分之内側區域S201。 104873.doc -44- 1280399 根據上述引線框架231及磁感應器，與第4實施例同樣 地，可實現磁感應器之小型化，並且可容易製造低成本高 功能之磁感應器。 又，由於平臺部207、209或物理量感應器晶片203、205 並未位於一方角部213h與他方角部213f之間，故於形成樹 脂成型部229時，可防止平臺部207、209及物理量感應器晶 片203、205妨礙溶融樹脂之流動。因此，樹脂形成空間内 難以形成無樹脂之部分。尤其，自閘門Μ流入樹脂形成空 間之樹脂，很容易即可由閘門Μ到達最遠位置之他方角部 S203 〇 此外’亦可防止由於流入樹脂形成空間内之樹脂流動， 使平臺部207、209或物理量感應器晶片203、205受壓，由 此造成該等傾斜角度之突然變化。因此，可高精度設定物 理篁感應器晶片2 0 3、2 0 5之傾斜角度。Next, a second embodiment of the present invention will be described with reference to Figs. Further, the lead frame and the magnetic sensor of the second embodiment are different from the first embodiment in that the frame portion is connected to the land portion. Here, only the connection portion between the frame portion and the platform portion will be described, and the lead frame! The same components as those of the magnetic sensor 3 are denoted by the same reference numerals, and the description is omitted. The sections 13 are connected to each other. The connection lead wire 6 is protruded from the respective land portions 7 and 9 at line symmetry positions passing through the land axis L2 as shown in Figs. 11 and 12, and the lead frame 2 is protruded from the corner portion of the rectangular frame portion η. The platform portions 7, 9 are paired with the centers of the rectangular frame portions 7, 9 by wires (connecting portions) 16. Specifically, one end portion 16a of the connecting lead 16 is connected to the side end portion at the both ends of the end portions 7b and 9b of the respective platform portions 7 and 9, and the end portions 7b and 9b of the respective platform portions 7 and $ are located. Connect the lead 17 side. The end portion 16a is provided with a concave notch on its side surface, and is formed to be thinner than the other portions of the connecting lead 16. Therefore, when the platform unit 9 is tilted, the end portion W is centered on the reference axis L3 of the joint-to-end portion 16a, and the end portion W becomes a twisted portion which is easily twisted. The end portions 16a of the chamber ports R and 9 and the connecting leads 16 are disposed at positions facing the thickness direction of the metal thin plate with respect to the entire lead wires 17 of the connecting wires. The front end portion 17a of the connecting lead 17 is disposed so as to overlap with one end portion and the % of the land portions 7 and 9 in the thickness direction. Magnetic sensor wafers 3, 5, from which the platform 104873. Doc -19- 1280399 4 The surfaces 7a and 9a of the 7 and 9 are exposed on the side of the connecting lead 17 and the protruding pieces 19 and 21, but in a state where the land portions 7 and 9 are inclined with respect to the frame portion u, The connecting lead 17 is not touched. The base end portions of the protruding pieces 19, 21 on the bottom faces 7d, 9d of the platform portions 7, 9 are formed with concave grooves 18 by optical etching. The thickness of the base end portion of the protruding pieces 19, 21 is thinner than the other portions due to the groove 18, and is easily deformed. Therefore, the inclination angle of the protruding pieces 19, 21 with respect to the platform portions 7, 9 can be set with high precision. In the surface 17b of the connecting lead 17 of the magnetic sensor wafers 3, 5, a recessed recess 20 is formed in the thickness direction of the metal thin plate from the front end portion 17a to the intermediate portion 17d by optical etching. When the magnetic inductor is manufactured by using the lead frame 2, the protruding portions 19 and 21 are pressed by the same metal mold as in the first embodiment, whereby the land portions 7, 9 and the magnetic sensor wafers 3, 5 are inclined with respect to the frame portion U. At this time, one end portion 16a of the connecting lead 16 is twisted around the reference axis L3. Further, at this time, as shown in Fig. 13, the physical quantity sensor wafers 3, 5 which are opposite to the surface 17b of the connecting lead 17 enter the concave portion p20. According to the lead frame 2 and the magnetic sensor (physical quantity sensor) 31, the magnetic sensor wafers 3 and 5 and the surface i7b of the connecting lead 17 are exposed from the land portions 7 and 9 in a state before the platform portions 7 and 9 are inclined. There is a gap between them. Therefore, even if the magnetic sensor wafers 3, 5 and the connecting leads 17 overlap in the thickness direction, interference between the magnetic sensor wafers 3, 5 and the connecting leads 17 can be prevented when the land portions 7, 9 and the magnetic sensor wafers 3, 5 are tilted. (Contact), and the miniaturization of the magnetic sensor 31 can be achieved. Moreover, a portion of the tilted magnetic sensor wafers 3, 5 can be formed in the connection 104873. Doc -20- 1280399 The recess 20 of the surface 17b of the junction lead 17. Therefore, it is not necessary to offset the platform portions 7 and 9 with respect to the connecting lead 17 by an excessive length in the thickness direction of the metal thin plate, thereby preventing interference between the magnetic sensor wafers 3 and 5 and the connecting leads 17, and the magnetic sensor wafer 3, 5 is inclined relatively large with respect to the frame portion n. Therefore, the thinning of the magnetic inductor 31 can be achieved. Further, in the above-described embodiment, the recessed portion 2 is formed in the connecting lead 17 from the distal end portion 17a to the intermediate portion 17d, but the present invention is not limited thereto. For example, a recess may be formed integrally with the surface 17b of the connecting lead 17, that is, the thickness of the connecting lead 17 may be thinner than the other portions. Further, the platform portions 7 and 9 are connected to the connecting lead 16 or the connecting lead, but the present invention is not limited thereto. As shown in Fig. 14, the platform portions 7 and 9 may be connected to the connecting lead 6 having at least a twisted portion. That is, the platform portions 7, 9 may not be connected to the connecting bow line 17 overlapping the thickness direction of the magnetic sensor wafers 3, 5. Here, in this case, interference with the magnetic sensor wafers 3, 5 can also be prevented. Preferably, the connecting lead 17 is formed with a recess U recessed from the surface 17b. Further, the twisted portion of the connecting lead 16 is coupled to one of the platform portions 7, 9.  9H, # ^ ^ ^ can be placed at a position closer to the side of the protruding pieces 19, 21 than the one end portions 7b, 9b. The reference axis L3 for rotating the flat to 邛7, 9 may be offset from the side of the platform portions 7, 9 to the protruding pieces 19, 21 from the sides 7b, 9b. Further, concave grooves are formed at the base end portions of the protruding pieces 19 and 21, but it is not necessary that the protruding pieces 19 and 21 are easily bent with respect to the land portions 7 and 9 so as to be protruded. The base ends of the sheets 19, 21 are formed with slits instead of the grooves 18. Doc 21 - 1280399 Further, in the first and second embodiments described above, the end portions 19c and 21c of the protruding pieces 21, 21 which are in contact with the sheet s are formed by press working. The front end portions 19c and 21c of the protruding pieces 19 and 21 may have a circular arc shape. That is, as shown in Fig. 15, the front end portion may be subjected to bending processing so that the bottom surface side of the protruding piece and the 21 blade end portion has a convex arc shape. This bending process is preferably carried out as shown in Fig. 16 while bending the projecting pieces 19, 21 with respect to the land portions 7, 9 by using a metal mold. Further, when the bending process is performed, as shown in Figs. 18 and 18, optical etching may be performed on the surfaces 19a, 2U or the bottom surface 21b of the end portions 19b of the protruding pieces 19, 21 to make the thickness of the front end portions 19c, 21c. The size is formed to be thinner than the other parts. With this configuration, the front end portion 19 can be easily bent. Further, the projecting pieces 19, 21 are formed at the other end portions 7c, 9c of the platform portions 7, 9 opposed to each other, but are not limited thereto. The protruding pieces 19, 21 may protrude at least on the side of the bottom faces 7d, 9d of the platform portions 7, 9. That is, as shown in Figs. 19 and 20, it is also possible to form the protruding pieces "to each other", the other end portions 7c, % of the platform portions 7, 9 and the side end portions 7e, 9f of the platform portions 7, 9 The protruding pieces 41, 42 (43, 44) formed on the same platform portion 7 (9) protrude at an angle of 90. Further, as shown in Figs. 21 and 22, a pair of protruding pieces 45 to 48 may be provided. It is formed at the side end portions of the platform portions 7, 9 and 7f, 9e, 9f, and extends from the side end portions 7e, 7f, 9e, 9f in the direction in which the two platform portions 7, 9 are arranged. The projections C, 47 (46, 48) ' on the side of the same side end portion 7e, 9e (7f, 9f) are arranged side by side in the width direction of the platform portions 7, 9. Further, as shown in Figs. As shown, the platform portions 7, 9 can also be cut to approximately c 104873. Doc -22- 1280399 Sub-shape, bending processing is performed on the rectangular notch portion to form protruding pieces 49 to 56. In this configuration, as shown in Figs. 23 and 24, the projecting pieces 49, 5'' can protrude from the other end portions 7c, 9c of the flat chamber portions 7, 9. Further, as shown in Fig. 25 and %, the protruding pieces 51 and 52 may protrude from the end portions and the outer side of one of the platform portions 7, 9. Further, as shown in Figs. 27 and 28, or the two projecting pieces 53, 54 (55, 56) formed on the same land portion 7 (9) are 9 互 each other. Prominent from the angle. Here, the protruding pieces 53, 55 protrude from the other end portions of the platform portions 7, 9 and cause the other protruding pieces 54, 56 to protrude from the 9f of the platform portions 7, 9 Since the protruding pieces 49 to 56 are not formed to extend beyond the platform portions 7, 9, the magnet inductor can be further miniaturized even if the area of the magnetic sensor wafers 3, 5 or the land portions 7, 9 is increased. As described above, the inclination of the platform portions 7, 9 by the protruding pieces 19, 21, 41 to 56 can be determined based on the inclination angles of the respective platform portions 7, 9 as the target, thereby determining the platform portions 7, 9, and the protruding pieces. Sizes of 19, 21, 41 to 56. (t/2 + h0)+L4sinei = L5sin(180〇-ei-e2). . . (i) As shown in Fig. 29, in the formula (1), the thickness dimensions of the parts $9 and 9, h0 are not shown from the bottom of the platform parts 7, 9 to the bottom 7d, 9d: the platform part Deviation in the thickness direction of the crucible: the amount of the platform sound relative to the base of the base portion I to the base end portion of the dog pieces 19, 21, 41 to 56 with respect to the joint. Σς主-aw 1 ^ ^ ^ pm Self-extension "19, 2 Bu 41 to 56 base end to 】 04873. Doc -23- 1280399 Month " The length of the highlights of the section. Further, the base end portions of the protruding pieces 19, 21, 41 to 56 in the formula (1) indicate that the bottom surface of the platform portions 7, 9 is intersected with the bottom surfaces 19b, 21b, 41b to 56b of the protruding pieces 19 21, 41 to 56. position. Further, ei indicates the inclination angle of the bottom surface 7d of the platform portions 7, 9 and the bottom surface 17e of the connection lead 17. Further, Θ2 indicates the bending angles of the bottom faces 19b, 21b of the projecting pieces 19, 21, 41 to 56 with respect to the bottoms (4) and 9d of the platform portions 7, 9. In the formula (1), (t/2+ h0) represents the distance from the bottom surface 17e of the connecting lead 17 to the reference axes L1, L3 in the thickness direction of the metal thin plate, but since _ is sufficiently small with respect to L1 (L1 : t = 1〇: 〇, therefore, it has no effect on the value of the tilt angle (1) or the bending angle Θ 2. Using this formula (1), the length L4 of the platform portion is calculated from the length L5 of the protruding piece and the bending angle, and the results are as follows. The values shown below are assumed to be an inclination angle Θ1 of 15. The offset h〇 is 〇mm, and the thickness of the platform portions 7, 9 is negligible (t = 0 mm). For example, as shown in Fig. 19. The lead frame protrudes from the protruding pieces 41, 42 (43, 44) formed on the same land portion 7 (9) at an angle of 90 互 each other, and the protruding piece length L5 is 〇·5 mm and the bending angle Θ2 is 90. In the case of the lead frame shown in FIG. 21, the platform has a pair of protruding pieces "to 48" from the side ends of the platform portions 7, 9 The partialization, & %, 9f extends in the direction in which the two platform portions 7, 9 are arranged, when the length of the protruding piece is considered to be 〇. 7mm, bending angle 02 is 12〇. When the platform section is L4gi 9imm. In addition, in the lead frame shown in FIG. 23, it has a platform portion 104873. Doc -24- 1280399, within 9, and prominent in the platform section 7, 49, 5 〇, m county ..." and the highlights of the section 7c, 9c Tianda film length L5 is 0. 5 mm, quite A & platform length L4 is 1. 37 _. Degree Θ 2 is 120. Further, as shown in FIGS. 19 and 27, the lead frame has a plurality of protruding pieces 41 to 44, 53 to 56, and is protruded; each of the flat portions 7 and 9 has a platform portion length L4 different from 1 to 44. In the above embodiment, the platform portion 7 and the bucket are generally rectangular in plan view, and the kernel is not limited thereto. The platform portions 7, 9 M o may at least allow the magnetic sensor to be crystallized on the surfaces 7a, 9a. That is, the flat gauge, the 乇仏10 chamber portion 7, 9 can be formed, for example, in a circular shape or an elliptical shape in a plan view, and can also be in the shape of a hole or a mesh. ^The outer portion of the platform portions 7, 9 which are penetrated in the thickness direction are inclined by the protruding handles 44 to W, and are not limited thereto. If at least the magnetic sensor is manufactured, the two magneto-sensing wafers 3, 5 are inclined to each other. Furthermore, as in the above configuration, in the case where the magnetic induction, 5 is further connected to the side of the lead i7 than the reference axis L3, when the platform portions 7, 9 are inclined, the magnetic sensor, the wafers 3, 5 will approach the connecting leads. The direction of movement of 17 is therefore preferably at this tilt, the magnetic sensor wafers 3, 5 are not in contact with the connecting leads 17 to adjust the configuration of the magnetic sensing wiper 35 on the surface of the platform portions 7, 9 and The lengths of the magnetic sensor wafers 3, 5 exposed from one of the end portions %, 9b of the platform portions 7, 9 are adjusted. Further, as shown in Fig. 30, when one of the end portions 7b, 9b of the platform portions 7, 9 is closer to the side of the connecting lead i7 than the reference axes LI, L3, the platform portion 104873. Doc -25 - 1280399 When the 9 and 9 are inclined, the one end portions 9b and 9b move toward the lower side 27a side of the resin molded portion 27. Therefore, when tilting at this, it is preferable to adjust the surfaces 7a, 9a along the platform portions 7, 9 from the reference axes L1, L3 to one end in such a manner that one of the end portions 7b, 9b of the platform portions 7, 9 does not contact the lower surface 2 The length of the platform parts 7, 9 up to the number of parts. Further, as described above, the length adjustment of the magnetic sensor wafers 3, 5 exposed from the one end portions 7b, 9b of the platform portions 7, 9 is also applicable to the magnetic inductor wafers 3, 5 and the connecting leads 17 not overlapping in the thickness direction. situation. That is, for example, in the case where the magnetic sensor wafers 3, 5 are more exposed on the lead 15 side than the reference axes L1, L3, when the land portions 7, 9 are tilted, the magnetic sensor wafers 3, $ will be closer to the lower side of the connecting leads 27. Move in the direction of the side 27a side. Therefore, it is preferable to adjust the surfaces 7a, 9a along the land portions 7, 9 from the end portions of the magnetic sensor wafers 3, 5, and the lower portions 27a of the resin molding portions 27 so as not to be inclined. The lengths of the magnetic sensor wafers 3, 5 exposed by the portions 7b, 9b. Further, in the above embodiment, the two magnetic induction wafers 3, 5 are inclined by the reference axes L1 and B3 which are parallel to each other, respectively, but are not limited thereto. For example, the two magnetic sensor wafers 3, 5 can be tilted, respectively, centering on the reference axes perpendicular to each other. At this time, the two sensing directions perpendicular to each other of the two magnetic sensor wafers 3, 5 (for example, the A and D directions in FIG. 6) form a plane parallel to the lower surface 27a of the resin molding portion 27, so that the measurement can be performed with high precision 2 7 a magnetic. (Third embodiment) Hereinafter, a third embodiment of the present invention will be described. 104873. Doc -26- 1280399 As shown in FIGS. 31 and 32, the lead frame 1〇1 is provided with two platform portions 1〇7 and 109 for arranging a magnetic sensor wafer (physical quantity sensor) which is formed into a rectangular plate shape. The wafers 1〇3 and 105; the frame portion 11 includes the support platform portions 1〇7 and 109; and the connection portions 119 and 121 which connect the respective platform portions 1〇7 and 1〇9 to the frame portion 111. The platform portions 107, 1〇9, the frame portion lu, and the connecting portions 119 and 121 are integrally formed. The frame portion 丨丨 includes a rectangular frame portion 3 formed in a rectangular frame shape in a plan view so as to surround the platform portions 107 and 109, and a plurality of lead wires 11 5 and 11 7 ' from the rectangular frame portion 113 toward the inner side protruding. The connecting portions 119 and 121 connect the respective platform portions 107 and 1 to 9 and the lead wires 117 (one for each of the three in the present embodiment). The leads 115 and 117 are electrically connected to pads (not shown) of the magnetic sensor wafers 1 and 3, which are disposed apart from each other. The two platform portions 、7, 1 〇9 are arranged along one side of the rectangular frame portion 113. The lead wires 117 connected to the land portions 107 and 109 extend in the direction in which the two land portions 1〇7 and 1〇9 are arranged. The lead wires connected to the respective platform portions 107 and 1 are extended in the opposing directions. Each of the land portions 107 and 109 and the connecting portions 119 and 121 includes a plurality of extension leads 123 and 125 extending from the front ends of the lead wires 117, and the extension leads 123 and 125 are separated from each other. The lead wires 127 and 129 projecting from the land portions 107 and 1 are formed at the front ends of the lead wires 123 and 125 which are opposite to each other. These protruding leads 127, 129 are integrally formed with the leads 117 connected to the respective land portions 107, 109. Further, the magnetic sensor wafers 1〇3 and 105 are placed on the platform units 1〇7 and 1〇9, and the protruding leads 127 and 129 do not overlap the magnetic sensor wafers 103 and 105. These extend the leads 123, 125 and the surfaces 123a, 104873 of the protruding leads 127, 129. Doc -27· 1280399 125a, 127a, and 129a are optically engraved, and the thickness of the land portions IQ?, 109 and the joint portions 119, 121 are formed to be thinner than the lead 117 or the above-mentioned projecting piece. Each of the surfaces 123a and 125a of the extension leads 123 and 125 is disposed at a position corresponding to each of the land portions 107 and 109, and each of the sheet-like insulating films 131 and ι33 is disposed, that is, each of the insulating films 131 and 133 extends across the plurality of extension leads. 123, 125 and configured. The insulating films 131, 133 are formed of an electrically insulating material. On the surface and the bottom surface of the insulating films 13 1 and 13 3, an adhesive layer (not shown) is formed in advance. This adhesive layer is formed on both sides of the insulating film 13 133 for the subsequent land portions 107, 109 and the magnetic sensor wafers 103, 1 〇 5. The layer then has any of the following functions: a temporary continuation function that can be pasted again afterwards or a permanent continuation function that cannot be pasted again. Each of the insulating films 131 and 133 is adhered to the land portion 107 and the crucible 9. In this state, the magnetic sensor wafers 103 and 105 can be attached to the surfaces 123a and 125a of the land portions 107 and 109 via the insulating films 131 and 133. The protrusions 135, 137 protruding from the sides 123d, 125d of the extension leads 123, 125 are formed at the front ends of the protruding leads 127, 129 opposite to each other, so that the protrusions 135, 137 are opposed to the extension leads 123, 125 or the protruding leads ^7, 139 are bent, and the base ends of the protruding pieces 135, 137 are optically etched to have the same thickness as the land portions 107, 109. Namely, the base end portions of the protruding pieces 135, 137 are formed to be thinner than the other portions and deformable. Therefore, the inclination angle of the large pieces 135, 137 with respect to the platform portions 1?7, 1?9 can be set with high precision. The magnetic sensor 104873 is manufactured using the lead frame 101 described above with reference to FIG. Doc -28- 1280399 method. First, the magnetic sensor wafers 103 and 105 are attached to the surface 123a of the land portions 1〇7 and 109 via the insulating film 131 and the crucible 3. Then, the wires 138 are connected to electrically connect the pads (not shown) disposed on the surfaces of the magnetic sensor wafers 103 and 1 to the leads 115 and 117. Further, the dry pad of one magnetic sensor chip 1〇3 and the surface 129a of the dog lead wire 129 are similarly connected via a wire 138. The protruding lead 129 is located on the side of the land portion 9 on which the other magnetic sensor wafer 〇5 is disposed. . At this time, the same lead 117 is electrically connected to the two magnetic sensor wafers 103 and 1B. However, the lead 117 is used as an electrode for sharing the two magnetic inductor wafers 103 and 105, for example, as a ground electrode or the like. Further, at the stage where the platform portions 107 and 109 are inclined, the distance from the joint portion of the magnetic sensor wafers 103, 010 to the joint portions of the leads 115 and 117 changes, and therefore, the material of the wire 138 is preferable. Soft and flexible. Then, a resin molded portion in which the magnetic sensor wafers 1〇3, 1〇5, the land portions 1〇7 and 109, and the leads 115 and 117 are fixed is formed. That is, first, as shown in Fig. 33, the rectangular frame portion 丨丨3 of the lead frame 1 〇 1 is placed on the surface E1 02 of the metal mold E having the concave portion E101. At this time, the leads 115 and 117, the land portions 1〇7 and 109, the magnetic sensor wafers 103 and 105, and the protruding pieces 135 and 137 on the inner side of the rectangular frame portion 113 are disposed above the concave portion E1〇1. Further, the magnetic sensor wafers 103 and 105, the land portions 107 and 109, and the protruding pieces 135 and 137 are disposed in this order from the concave portion E101 side. Above the protruding pieces 135, 137, a metal mold F having a flat surface 1^0! is disposed, and a rectangular frame 104873 of the lead frame 1〇1 is sandwiched with the metal mold E. Doc -29- 1280399 Part 113. As shown in Fig. 34, when the rectangular frame portion 113 is sandwiched by the pair of upper and lower metal molds E and F, the flat surface F101 of the metal mold F presses the front end portions 135a and 137a of the respective protruding pieces 135 and 137. At this time, the connection portions 119 and 121 connected to the respective platform portions 1〇7 and 1〇9 are deformed so as to center the reference axis line L101 where the connection portions 119 and 121 are connected to each other, and the platform portion 1〇7, 1〇 9 is inclined with respect to each of the leads 117. Here, since the connecting portions 119 and 121 are formed into a thin thickness by optical etching and become easily deformable portions which are easily deformed, the land portions 丨〇7 and i 〇9 are inclined. Thereby, the magnetic sensor wafers 103, 1〇5 and the land portions 107 and 1 are inclined at a specific angle with respect to the rectangular frame portion 113 or the flat surface F101. Thereafter, in a state where the flat surface F101 of the metal mold F is pressed against the end portions 135a and 137a before the protruding pieces 135 and 137, the molten resin is ejected into the metal molds E and E, and the magnetic sensor wafers 1 and 3 are filled. Resin interior. Therefore, as shown in Figs. 35 and 36, the magnetic sensor wafers 1〇3 and 1〇5 are fixed to the inside of the resin molded portion 141 in a state of being inclined to each other. Further, it is preferable that the resin used here uses a material having a high fluidity so that the inclination angles of the magnetic sensor wafers 103 and 105 and the land portions 1〇7 and 1〇9 are not changed by the flow of the resin. Finally, the rectangular frame portion 113 is cut and divided into the respective leads 115, 117 to be electrically separated, and the manufacture of the magnetic sensor 140 is completed. As shown in Fig. 36, the magnetic sensor 140 manufactured as described above has the arrangement relationship of the magnetic sensor wafers 103 and 1 〇5 which are the same as those described in the first embodiment. Further, the magnetic sensor 140 has the same function as that of the first embodiment. Further, in the above lead frame 101 and magnetic sensor 140, magnetic sensor crystal 104873. Doc -30- 1280399 An insulating film 13][, 133 ' is provided between the sheets 103 and 105 and the platform portions 1〇7 and i〇9, so the magnetic sensor wafers 1〇3, ι〇5 and the platform portion 1〇7 are connected. , ι〇9 lead 11 7 electrical insulation. Therefore, not only the lead wires 5 but also the lead wires 117 constituting the land portions 1 to 7, 109 can be used, and the magnetic sensor chips 1 〇 3 and 1 〇 5 can be electrically connected by the above-described wire bonding. Namely, the number of leads which can be electrically connected to the magnetic sensor wafers 103, 105 can be increased without causing an increase in the size of the lead frame 1 by increasing the number of the leads 115. That is, in the first embodiment, the lead wires 17 used in connection with the land portions 7 and 9 can be used for electrical connection with the magnetic sensor wafers 103 and 105 in this embodiment. Therefore, more input and output can be performed with respect to the magnetic sensor wafers 3, 5, with the result that the highly functional magnetic sensor 40 can be provided. Further, it is not necessary to separately provide a dedicated lead wire for connection to the land portion 1〇7, 1〇9 in the frame portion 111. The size of the frame portion ni of the surrounding platform portions 107, 109 can be reduced as compared with the case where the dedicated lead wires are connected, so that the size of the magnetic sensor 40 can be reduced. Further, a wire 138 is bonded between the pad of the magnetic sensor wafer 103 and the surface 129a of the protruding lead 129, and the same lead 117 can be electrically connected to the two magnetic sensor wafers 103 and 105. The protruding lead 129 is placed on the magnetic sensor. The platform portion 1 of the wafer 105 is 1 〇 9. Thereby, the number of leads 117 for electrically connecting to the magnetic sensor wafers 103, 105 can be reduced, so that further miniaturization of the magnetic sensor 140 can be achieved. Further, when the platform portions 107, 1〇9 and the magnetic sensor wafers 1〇3, 1〇5 are centered on the reference axis L101, and are inclined with respect to the frame portion ln, one end portion 103b of one magnetic sensor wafer 103 and the other magnetic sensor wafer 1〇5 side of the protrusion 104873. Doc -31 - 1280399 The distance between leads 129 does not change much. Therefore, the wires 138 connected to the protruding leads 129 can be formed to be short, so that the manufacturing cost of the magnetic inductor 140 can be reduced. Further, since the land portions 107 and 1 and the connecting portions 119 and 121 are formed by the extension leads 123 and 125 having the same shape as the lead wires 7, the shape of the lead frame 101 can be simplified. Therefore, the lead frame 101 can be reduced or the manufacturing cost of the magnetic inductor 140 can be reduced. Further, by using the insulating films 131 and 133 having the adhesive layers, the magnetic sensor wafers 103 and 105 are attached to the surfaces 123a and 125a of the land portions 1〇7 and 〇9, so that compared with the case where the adhesive is previously applied, It is easy to increase the thickness accuracy of the adhesive layer. Therefore, it is possible to suppress the inclination of the magnetic sensor wafers 103, 105 with respect to the surfaces 123a, 125a of the land portions 1?7, 1?9 due to the thickness unevenness of the adhesive. Further, in the state in which the liquid portion is applied to the substrate portions 107, 1〇9 and the magnetic sensor wafers 1〇3 and 1〇5, the liquid may drip and adhere to the lead 117 and the protruding leads 127 and 129. Surfaces 127a, 129a. In the present embodiment, since the insulating films 131 and 133 having the adhesive layers are used, the adhesive is not attached to the surfaces of the leads 117 or the protruding leads 127, 129. Therefore, the magnetic sensor 40 can be easily fabricated. Further, in the above embodiment, the lead wire 117 connected to the land portion (10) is electrically connected to the magnetic sensor wafer 1A3 mounted on the other platform portion iq7 by the wire 38, but the present invention is not limited thereto. For example, as shown in FIG. 37 and %, the wire 139 will be used to intercept the magnetic sensor wafers 103 and 105 of the thousands of units 107 and 109. Udu 10 to 4 extended protruding leads 126, 104873. Doc -32- 1280399 128 electrical connection. These protruding leads 126, 128 are formed in the areas where the front ends of the extension leads 123, 125 do not overlap with the magnetic sensor wafers 1〇3, ι5. In this configuration, after the protruding leads 126, 128 are electrically connected to the magnetic sensor wafers 103, 105 by wire bonding, and the land portions 107, 109 are inclined with respect to the leads 117, the extension leads 123, 125 and the respective protruding leads The positional relationship between 126 and 128 has not changed. Therefore, deformation of the wires 139 connected between the magnetic sensor wafers 103, 105 and the protruding leads 126, 128 can be surely prevented. Therefore, the length of the wire 139 can be shortened in advance, so that the manufacturing cost of the magnetic inductor can be reduced. Further, the physical quantity sensor wafers 103, 1 and 5 can be electrically connected to the plurality of protruding leads 126, 128 constituting the land portions 107, 109, so that the number of leads electrically connectable to the magnetic sensor chips 103, 105 can be further increased. That is, since the plurality of leads 117 connected to the land portions 107, 109 are used for electrical connection with the respective magnetic sensor wafers 103, 105, further miniaturization of the magnetic sensor can be achieved. Further, in the third embodiment described above, all of the extension leads 123 and 125 function as the platform portions 107 and 109, but extension leads that do not function as the platform portions 1〇7 and 109 may be provided. That is, for example, as shown in Figs. 37 and 38, the lead frame 146 has the first lead 143 (corresponding to the lead 117 shown in Fig. 31), and is connected to the extension leads 123 and 125 which form the land portions 1〇7 and 〇9. Furthermore, the lead frame 146 has a second lead 144 which is aligned with the lead 143 along the reference axis L1 〇1. The lead 144 is formed with an abutting lead 145 extending from the front end thereof. The abutting lead 145 is disposed substantially parallel to the extension leads 123, 125, 104873. The length of doc -33- 1280399 is approximately equal to the length of the extension lead 123 plus the protruding lead 126. At the front end of the adjacent lead 145, a protruding piece 147 similar to the protruding piece 135 and the yoke 7 is formed, and the protruding piece 135, 137 is formed at the front end of the protruding lead 126, 128. Similarly to the extension leads 123 and 125, the adjacent lead wires 145 are bent and inclined with respect to the respective second lead wires 44 around the reference axis L1 01. That is, the adjacent leads 145 can be inclined to the extension leads η], 125 in the same direction and the oblique angle. When the magnetic inductor is fabricated using the lead frame 146, the magnetic sensor wafers 103, 1〇5 are first electrically connected to the adjacent leads 145 by wire bonding. . Thereafter, the protruding piece 147 is pressed by the metal mold, whereby the extension leads 123, US and the adjacent leads 145 are inclined in the same direction. At this time, the relative distance between the adjacent lead wires 45 and the extension leads 23, 25 is kept constant. That is, the length of the wire 148 can be made shorter, without deforming the wires 148 electrically connecting the magnetic sensor wafers ι 3, 1 〇 5 and the adjacent leads 145. Therefore, the manufacturing cost of the magnetic inductor can be reduced. Further, since the adjacent lead wires 145 are inclined at the same inclination angle to the land portions U)7, Η)9, the wafers larger than the magnetic sensor wafers 103, 105 can be mounted on the land portions 1A, 7 and 9. That is, a larger wafer can be supported by abutting the leads (4). Therefore, the design of the lead frame 146 does not need to be changed corresponding to the size of the magnetic sensor wafer. Thus, the lead frame 146 can be widely used. In this case, it is preferable to provide the insulating films 131 and 133 between the magnetic sensor wafer and the connecting lead 145. Further, the connecting lead 145 and the extension leads 123 and 125 have the same shape, so that the lead frame 46 can be easily manufactured. 104873. Doc-34- 1280399 In the lead frame 146 of the above embodiment, the two platform portions 107, 109 are designed obliquely centered on the reference axis U 01 which is parallel to each other, but are not limited thereto. For example, as shown in Fig. 39, the two platform portions 1〇7,;1〇9 may be inclined at the center of the reference axes L1 0 1 and L102 which are perpendicular to each other. In this configuration, the leads 117 forming the respective land portions 107, 109 are perpendicular to each other. At this time, the two sensing directions (A direction and C direction) perpendicular to each other of the two magnetic sensor wafers 1〇3 and 1〇5 are disposed on a plane parallel to the lower surface 141a of the resin molding portion ι41, so that the magnetic precision can be accurately performed. The magnetic properties of ΐ4ι& Further, in the configuration shown in Fig. 39, the two magnetic sensor wafer cassettes 3, 1 〇 5 are arranged along the diagonal line L1 〇 3 of the rectangular frame portion 113. According to this configuration, when the plate portions 107, 1〇9, the magnetic sensor wafers 103, 105, and the leads 115, 117 are integrally molded by the resin, the molten resin can smoothly flow. In other words, when the molten resin is poured into the resin forming space formed by the metal molds E and F, the resin molding portion 14 i is formed, and the molten resin is formed from the square corner portion 113a of the rectangular frame portion 1 i 3 toward the corner portion 113b. The side flows in, so that the platform portion 1〇7, 109 or the magnetic sensor wafers 1〇3, 1〇5 does not hinder the flow of the molten resin, and the rectangular frame portion 113 is located on the diagonal line L1 crossing the diagonal line L1〇3. 〇 4 on. Therefore, since the molten resin can smoothly reach the corner portion 113b from the corner portion 13a, it is possible to surely prevent the resin from being filled. Further, it is possible to prevent the platform portions 1 to 7, 109 or the magnetic sensor wafers ι 3, 1 〇 5 from being subjected to fluid pressure due to the flow of the molten resin, resulting in a change in the inclination angles. As a result, the inclination angles of the magnetic sensor wafers 103, 105 can also be set with high precision. Further, in this embodiment, the lead wire 1 forming the platform portion 1 〇7, 1 is 7 104873. Doc - 35 - 1280399 The leading ends of the lead wires 115 arranged in common can be provided with the same leads as the adjacent lead wires 145 illustrated in FIG. Further, although the insulating films 131 and 133 which form the adhesive layer using the surface and the bottom surface are exemplified, the thickness of the adhesive layer is not limited thereto, and the insulating film may be used to laminate the plate portions 107, 1 and 9 and the magnetic sensor. Wafers 1〇3, 1〇5 are followed. Further, the protruding pieces 135, 137, and 147 are not limited to the end portions of the platform portion 107 or the adjacent lead wires 145 which are formed to face each other, and may protrude at least on the bottom surfaces 123d and 125d of the land portions 107 and 109. Further, the land portions 107, 109 or the adjacent leads 145 are inclined by the protruding pieces 135, 137, and 147, but are not limited thereto. At least the magnetic sensor 14 〇 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , (Fourth Embodiment) A fourth embodiment of the present invention is shown in Figs. 40 to 45. The magnetic susceptor (physical quantity sensor) of this embodiment is the same as the above-described embodiment, and the direction and size of the external magnetic field are measured by two magnetic sensor wafers which are inclined to each other, and are manufactured using a lead frame. The lead frame is formed by subjecting a metal plate including a thin plate-shaped copper material to press working and etching. As shown in FIGS. 40 and 41, the lead frame 201 includes two platform portions 2〇7 and 2〇9, and these are formed in a rectangular plate shape in plan view for arranging magnetic sensor wafers (physical quantity sensors) 203 and 205; And a frame portion 2U that supports the platform portions 2〇7, 209. These platform portions 207, 209 are integrally formed with the frame portion 211. The frame portion 2U includes a rectangular frame portion 213 that surrounds the platform portion 2〇7, 2〇9 104873. The doc-36- 1280399 is formed in a frame shape in a substantially square shape in plan view; the plurality of leads 215 and 216 are vertically protruded from the sides 213a to 2 13d of the inner region S201 of the rectangular frame portion 213, and the connecting leads (connected) The portion 217 protrudes inward from the corner portions 213e to 213h of the inner region S201. The lead wires 215 and 216 are respectively provided with a plurality of roots (each of the seven illustrated in the figure) on each of the sides 213a to 213d of the inner region S201. Leads 2 1 5, 216 are provided for electrical connection to pads (not shown) of magnetic sensor wafers 203, 205. Furthermore, in order to avoid contact between the leads 21 5 and 216 and the connecting leads 21 7 described below, they are only provided in the middle of the sides 213a to 213d of the inner region S201, and are not provided at the ends of the sides 213a to 213d. unit. The vicinity of the corner portions 213e to 213h of the inner side region S201 is a non-arrangement region S202 to S205 in which the lead wires 215 and 126 are not disposed. The connecting lead 21 7 is a hanging wire that connects the land portions 207 and 209 and the rectangular frame portion 213. One end portion 217a of the connecting lead 217 is coupled to a side end portion located at both ends of one of the end portions 207a, 209a of each of the platform portions 207, 209. Here, the side end portions of the respective platform portions 207 and 209 refer to the end portions of the respective platform portions 207 and 209 which are perpendicular to the direction in which the two platform portions 207 and 209 are arranged. One end portion 217a of the connecting lead 217 is provided with a concave notch on its side surface, and is formed to be thinner than the other portions. When each of the platform portions 2, 7 and 209 is bent obliquely about the axis L201, the notch becomes a deformable portion which is easily deformable, and the axis L2 is formed by two sides 213a and 213c which are parallel to each other along the inner region S201. The two platform portions 207, 209 are arranged along one side 2 13d of the inner region S201. Further, each of the land portions 207 and 209 is located at a position deviated from the lead wires 215 and 216 in the thickness direction of the metal thin plate (lead frame). The surfaces 207b, 209b of the platform portions 2〇7, 2〇9 are respectively placed on the sides of the magnetic sensor wafers 203 and 205. The doc -37- 1280399 is formed in a substantially rectangular shape in plan view. The two platform portions 207 and 209 are disposed closer to the non-installation regions S202 and S205 than the non-installation regions S203 and S204, respectively, and the surfaces 207b and 209b are smaller than the placement surfaces of the magnetic sensor crystals 203 and 205. A concave portion 220 is formed by optical etching from the surface 215b of the lead portion 215a of the lead portion 215 adjacent to the land portions 207, 209 - the end portions 207a, 209a to the intermediate portion. That is, the front end portion 215a of the lead wire 215 is formed to have a thickness thinner than the base end portion 215c of the lead wire 215 on the side of the rectangular frame portion 213. The other end portions 207c and 209c of the Yupingtang portions 207 and 209 are respectively formed with a pair of protruding pieces 219 and 221 protruding from the bottom surfaces 207d and 209d of the platform portions 207 and 209. The dedicated tabs 219, 221 are provided to tilt the platform portions 207, 209. The protruding piece 219 of the platform portion 207 and the protruding piece 221 of the platform portion 209 oppose each other. In order to stabilize the inclination of each of the platform portions 207 and 209, it is preferable to increase the mutual spacing of the pair of projecting pieces 219 and 221 formed between one of the platform portions 207 and 209. Further, in order to stabilize the inclination angle of each of the platform portions 207 and 209, it is desirable to increase the width of the front end portions of the pair of protruding pieces 219 and 221. As a result, when the respective platform portions 207 and 209 are inclined, the area of the end portion before the pressing force is increased, so that the stress is relaxed and the deformation of the protruding pieces 219 and 221 can be prevented, so that the inclination of the platform portions 207 and 209 is stabilized. Specifically, the pair of protruding pieces 219 and 221 may have a wider width instead of the rod shape as shown. Alternatively, the front ends of the protruding pieces 219 and 221 may be bent into a rectangular shape. Since the two platform portions 207, 209 are disposed close to the same side 203d side of the inner region, they are located within the side opposite to the side 2〇3d. Doc -38 - 1280399 The side area S201 becomes the remaining area. In the remaining area, a substantially rectangular auxiliary platform portion 223 connected to the connection lead 21 7 is formed. As shown in Fig. 42, the auxiliary platform portion 223 is located at a position deviated from the thickness direction of the metal thin plate (lead frame 201) similarly to the land portions 207 and 209. The auxiliary platform portion 223 is formed with a twisted portion 217b and a pair of projecting portions 225 for tilting the auxiliary platform portion 223 about the axis L202 perpendicular to the above-mentioned axis L201. On the surface 223a of the auxiliary platform unit 223, a semiconductor wafer 227 such as a magnetic sensor wafer or an acceleration sensor wafer, a temperature sensor wafer, and a signal processing LSI is placed. The semiconductor wafer 227 is electrically connected to leads 216 disposed in the kitchen. Next, a method of manufacturing a magnetic inductor using the lead frame 20 1 described above will be described. As shown in Figs. 40 to 42, first, the magnetic sensor wafers 203 and 205 and the semiconductor wafer 227 are attached to the surfaces 207b, 209b, and 223a of the land portions 207 and 209 and the auxiliary platform portion 223. Each of the magnetic sensor wafers 203 and 205 is disposed close to the non-arranged regions S202 and S205 so that the respective sides thereof are parallel to the respective sides 213a to 213d of the inner region S201. Further, each of the magnetic sensor wafers 203 and 205 is exposed by the surfaces 207b and 209b of the land portions 207 and 209. However, the exposed portions are arranged in such a manner as to be connected to the plurality of leads 215 and 216 provided on the sides 213a and 213c of the inner region S201. Among them, the plurality of lead wires 215 (four in the figure) located on the side of the non-set areas S202 and S205 overlap. As shown in Fig. 41, the land portions 2, 7, 209 are offset from the lead 21 5 by the thickness direction of the metal thin plate (lead frame 2〇1), so that the magnetic sensor wafers 203 and 205 are not in contact with the lead 21 5 . Each of the magnetic sensor wafers 203, 205 is disposed in a region from the front end portion 215a of the lead 215 to a midway portion, and the region is formed into a thinner thickness by the above optical etching. Doc -39- 1280399 degrees. Further, each of the magnetic sensor wafers 203 and 205 is disposed so as not to overlap with the lead wires 216, and the lead wires 216 are arranged along the arrangement direction (side 213d) of the land portions 207 and 209. Next, the pads (not shown) on the surfaces of the magnetic sensor wafers 203 and 205 and the semiconductor wafer 227, and the leads 216' which are not overlapped with the magnetic sensor wafers 203 and 205 are provided by wires (not shown). Electrical connections. Furthermore, the positional relationship between the joint portions of the magnetic sensor wafers 203 and 205 and the semiconductor wafer 227 and the joint portion of the lead wires 216 is changed at the stage of tilting the following terrace portions 207 and 209 and the auxiliary platform portion 223, so that the positional relationship is changed. The good thing is that the wiring material is soft and flexible. Then, a resin molded portion (package) in which the magnetic sensor wafers 203 and 205, the semiconductor wafer 227, the land portions 207 and 209, the auxiliary stage portion 223, and the leads 215 and 216 are integrally fixed is formed. That is, as shown in Fig. 43, the rectangular frame portion 213 of the lead frame 201 is disposed on the surface E202 of the metal mold E having the concave portion E201. At this time, the lead wires 21 5 and 216, the land portions 207 and 209, the magnetic sensor chips 203 and 205, and the protruding pieces 219 and 221 on the inner side of the rectangular frame portion 23 are disposed above the concave portion E201. That is, in this state, the magnetic sensor wafers 203 and 205, the land portions 207 and 209, and the protruding pieces 219 and 221 are arranged in this order from the concave portion E2〇1 toward the upper side. Above the protruding pieces 219, 221, a metal mold F having a flat surface F2?i is disposed, and the rectangular frame portion 21 of the lead frame 201 is sandwiched by the metal mold E. As shown in Fig. 44, when the pair of metal molds £ and ρ sandwich the rectangular frame portion 21 3, the flat surface F201 of the metal mold F presses the respective protruding pieces 219 and 221. Borrow 104873. Doc - 40 - 1280399 Thus, by pressing, one end portion 217a of the connecting lead 21 7 is twisted about the axis L201, and the platform portions 2 〇 7, 2 0 9 are inclined. At this time, one end portion 2〇3a, 205a of the magnetic sensor wafers 203, 205 facing the surface 215b of the lead 2 15 is introduced into the concave portion 220. Thereby, the magnetic sensor wafers 203, 205 and the land portions 207, 209 are inclined at a specific angle with respect to the rectangular frame portion 213 or the flat surface F2?. Similarly to the platform portions 207 and 209, the auxiliary platform portion 223 presses the protruding piece 225 by the flat surface F2〇1 of the metal mold F, so that it is inclined at a specific angle with respect to the rectangular frame portion 21 3 or the flat surface F201. Then, the molten resin is ejected to the resin forming space formed by the concave portions E2 〇 1 and the flat surface F201 of the metal molds E and F in a state where the protruding faces 219 and 221 are pressed against the flat surface F201 of the metal mold F. By melting the resin, a resin molded portion in which the magnetic inductor wafers 2 0 3 and 2 0 5 are filled in the resin is formed. When the resin is cured, as shown in Figs. 45 to 47, the magnetic sensor wafers 203, 205 are fixed to the inside of the resin molded portion (package) 229 while being inclined to each other. The resin used herein is preferably a material having a high fluidity so that the inclination angles of the magnetic sensor wafers 203, 205 and the semiconductor wafer 227 are not changed by the flow of the resin. Finally, the rectangular frame portion 213 is cut and the leads 215, 216 and the connecting leads 2 17 are separated, and the manufacture of the magnetic sensor 23 is completed. The resin molded portion 229 of the magnetic inductor 230 manufactured by the above method has a substantially rectangular shape in plan view similar to the rectangular frame portion 213. The leads 215, 216 extend from the sides 2293 to 229 of the inner region S2 〇 1 toward the inner side of the resin molding portion 229 which is drawn by the resin molding portion 229 104873. Doc • 41 - 1280399 points. These lead wires 215, 216 are not provided in the non-arrangement regions S202 to S205 located at the corner portions of the inner region S201. The bottom surface 216a of the lead wire 216 is exposed on the lower surface 229a side of the resin molded portion 229. One end of these leads 216 is electrically connected to the magnetic sensor wafers 203 and 205 and the semiconductor wafer 227 by metal wires (not shown), and the connecting portions and the wires are filled in the resin molded portion 229. Referring to Fig. 46, the magnetic sensor wafers 203, 205 and the semiconductor wafer 227_ are inclined with respect to the lower surface 229a of the resin molded portion 229. The other end portions 203b, 205b of the mutually opposite magnetic sensor wafers 203, 205 face the upper surface 2 2 9 c side of the resin molded portion 229. The surface 2 0 3 a of the magnetic sensor wafer 200 is tilted at an acute angle with respect to the surface 205a of the magnetic sensor wafer 205. That is, the angle of the platform portion 207 with respect to the platform portion 2〇9 is an acute angle. Therefore, the sensing directions of the magnetic sensor wafers 203, 205 are the same as those of the first embodiment of the present invention described with reference to Fig. 7. In addition, the angle Θ formed by the A_B plane with respect to the c_d plane is theoretically greater than 〇. And it is 9 inches. In the following, the three-dimensional geomagnetic orientation can be measured, but in practice, as in the first embodiment, it is preferably 20. Above, the better is 3〇. the above. Similarly to the magnetic sensor 3A of the first embodiment, the magnetic sensor 330 can be mounted, for example, on a substrate in the portable terminal device to detect the geomagnetic orientation. According to the lead frame 201 and the magnetic sensor 23A, one portion of the magnetic sensor wafers 203, 205 is overlapped with the lead wires 215, so that the magnetic inductor 230 can be miniaturized. Further, the magnetic sensor wafers 203, 205 are respectively adjacent to one corner of the inner region, i.e., the non-set regions S202, S205, and only one of the inner regions 82 〇 1 104873. Doc • 42- 1280399 Leads 15 protruding from sides 213a and 213c are overlapped. Therefore, compared with the case where the platform portions 2〇7, 2〇9 or the magnetic sensor wafers 20 3 and 2 0 5 are disposed in the central portion of one of the sides 213a and 213c of the inner region S201, the magnetic deer wafer 2 〇 3, The number of 205 overlapping leads is reduced. Therefore, the number of leads 216 electrically connectable to the magnetic sensor wafers 203, 205 can be sufficiently ensured without changing the arrangement of the leads 215, 216 with respect to the rectangular frame 213. Therefore, the input and output of a plurality of signals can be performed with respect to the magnetic sensor wafers 203 and 205, so that the magnetic sensor 230 of high function can be provided. Further, since it is not necessary to change the arrangement of the leads 21 5, 216 with respect to the rectangular frame portion 213, it is possible to easily manufacture a low-cost magnetic sensor. Further, since the two platform portions 207 and 209 or the magnetic sensor wafers 203 and 205 are disposed close to the same sides 213d and 229g of the inner region S201, an auxiliary platform can be additionally disposed in the remaining region of the inner region S201 of the rectangular frame portion 2 13 . The portion 223 or the semiconductor wafer 227 can provide a higher-function magnetic sensor 23 without changing the size of the rectangular frame portion 213 or the resin molded portion 229. Further, the 'inclined magnetic sensor wafers 203 and 205 can be filled in the concave portion 220 formed on the surface 215b of the lead 215. Therefore, it is not necessary to extend the length of the offset of the land portions 207 and 209 in the thickness direction of the metal thin plate 215, thereby preventing magnetic induction. The wafers 203, 205 are in contact with the leads 21 5, whereby the magnetic sensor wafers 203, 205 are relatively inclined with respect to the frame portion 211. Therefore, the thickness of the magnetic sensor 230 can also be reduced. Further, in the above embodiment, the protruding piece 225' is provided in the auxiliary platform portion 223, but is not limited thereto. The auxiliary platform portion 223 may be inclined with respect to the frame portion 至少 at least before the resin molding portion 29 is formed. 104873. Doc-43- 1280399 Further, when the auxiliary stage unit 223 is mounted on the semiconductor wafer 227 as a temperature sensor wafer or a signal processing LSI, it is not necessary to tilt it. At this time, the protruding piece 225 and the connecting lead 217 are not required. Next, a fifth embodiment of the present invention will be described with reference to Fig. 48. Further, in the lead frame and the magnetic sensor of the fifth embodiment, the positions of the land portion and the magnetic sensor wafer with respect to the frame portion are different from those of the fourth embodiment. Here, only the arrangement of the platform portion and the magnetic sensor wafer will be described, and the same components as those of the lead frame 2〇1 or the magnetic sensor 230 will be denoted by the same reference numerals, and the description will be omitted. In the lead frame 23 1 and the magnetic sensor of this embodiment, the two dummy land portions 207 and 209 and the magnetic sensor wafers 203 and 205 are arranged side by side on the diagonal line L203 of the inner region S201. Each of the platform portions 207 and 209 is disposed close to a corner portion located on the diagonal line L203, that is, the non-set regions S202 and S204. When the magnetic inductor is manufactured by using the lead frame 231, the molten resin is ejected to the concave portion E201 and the flat surface F201 of the metal molds E and F in a state in which the rectangular frame portion 213 is sandwiched by the same mold as in the fourth embodiment. The divided resin forming space forms a resin molded portion 229 in which the magnetic sensor wafers 203 and 205 are filled in the resin. The molten resin is ejected from the gate sill and flows to the side of the corner 213 f located at the opposite corner of the one corner portion 213h. The gate rim is disposed at one corner portion 21311 of the rectangular frame portion 213, and the rectangular frame portion 213 is located inside the rectangular shape. In the region S201, the other diagonal line L204 intersects with one diagonal line L2〇3. Further, the resin forming space corresponds to the inner region S201 defined by the resin molding portion 229. 104873. Doc-44- 1280399 According to the above-described lead frame 231 and magnetic sensor, as in the fourth embodiment, the magnetic inductor can be miniaturized, and a low-cost and high-function magnetic sensor can be easily manufactured. Further, since the land portions 207 and 209 or the physical quantity sensor wafers 203 and 205 are not located between the one corner portion 213h and the other corner portion 213f, when the resin molded portion 229 is formed, the land portions 207 and 209 and the physical quantity sensing can be prevented. The wafers 203, 205 impede the flow of the molten resin. Therefore, it is difficult to form a resin-free portion in the resin forming space. In particular, the resin flowing into the resin forming space from the gate damper can easily reach the corner portion S203 of the farthest position from the gate 〇, and can also prevent the platform portion 207, 209 or the flow of the resin flowing into the resin forming space. The physical quantity sensor wafers 203, 205 are pressed, thereby causing abrupt changes in the tilt angles. Therefore, the inclination angles of the physical sensor electrodes 2 0 3 and 2 0 5 can be set with high precision.

再者，於上述第4、第5實施形態中，連結引線2丨7之扭曲 部連結於平臺部207、209之一端部2〇7a、2〇%侧，但並非 限於此。扭曲部亦可配置於較之一端部2〇乃、2〇%更偏移 突出片219、221側之位置。即，亦瓦说丁士 且 1 处可使平臺部207、209旋 轉之軸線L201由平臺部207、209之一姓都”，ΟΛΠ ^ ^ 〜 鸲部207a、209a向突 出片219、221側偏移。 此外，有例示將一對突出片2 1 9、μ ,…1 全 221形成於各平臺部 207、209，但並非限於此。即，亦 j於各平臺部207、209Furthermore, in the fourth and fifth embodiments, the twisted portion of the connecting lead 2丨7 is connected to one end portion 2〇7a and 2〇% of the land portions 207 and 209, but the invention is not limited thereto. The twisted portion may be disposed at a position closer to the side of the protruding piece 219, 221 than the one end portion 2, 2%. That is, the axis L201 at which the platform portions 207, 209 can be rotated by one of the slabs and the first portion of the platform portions 207, 209, "ΟΛΠ ^ ^ 〜 鸲 207a, 209a are biased toward the protruding pieces 219, 221 Further, there are exemplified that a pair of protruding pieces 2 1 9 , μ , . . . 1 are formed in each of the platform portions 207 and 209, but the present invention is not limited thereto. That is, it is also in each of the platform portions 207 and 209.

僅形成一個突出片，使此突出片形成A 力乂马寬於平臺部207、209 之半幅寬度的同等寬度。於此構造中 T ’各平臺部207、209 104873.doc -45- 1280399 傾斜時，受到按壓力之突出片前端面之面積變大，故可防 止由於應力缓和所產生之突出片變形。因此，可穩定平臺 部207、209之傾斜角度。 此外，與第1及第2實施例中之說明同樣地，若突出片 219、221至少突出於平臺部207、209之底面207d、209d即 可。 進而，若平臺部207、209至少於形成樹脂成型部229之前 相互傾斜即可。 又，平臺部207、209例如可形成為俯視之圓形、橢圓形， 亦可形成為貫通於厚度方向之孔洞或網眼形狀。 此外，可將磁感應器晶片203、205、平臺部207、209及 引線21 5、2 16收納於作為封包之箱體内部，將其固定為一 又，兩個磁感應器晶片203、205亦可沿樹脂成型部229 之下面229a，以互相垂直之軸線為中心而傾斜。 進而，於上述第1至第5實施例中，係就檢測三維空間内 磁性方向之磁感應器作為物理量感應器進行說明，但並非 限於此。物理量感應器若係至少測定三維空間内之方位或 方向之感應器即可。即，物理量感應器亦可為例如加速度 感應器’其搭載有檢測加速度尺寸或方向之加速度感應器 晶片。 上述’參照圖式對本發明之實施例進行詳細說明，但具 體構造並非僅限於此等實施例，於不脫離本發明要旨之範 圍内，可進行設計變更。 104873.doc -46- 1280399 [產業上之可利用性；j 本發明可適用於測定磁及重力等物理量之方位及方向的 物理里感應器，並可實現該等物理量感應器之小型及薄型 化。 【圖式簡單說明】 圖1係表示本發明之第1實施例之引線框架的平面圖。 ▲圖2係表示將磁感應器晶片搭載於圖丨所示引線框架之狀 態的側剖面圖。 圖3A係表示圖丨所示引線框架之突出片的放大側面圖。 圖3B係表示圖丨所示引線框架之突出片的放大剖面圖。 圖3C係表示圖！所示引線框架之突出片形成方法的放大 剖面圖。 圖4係表示於圖丨所示引線框架中，使平臺部傾斜之方法 的側剖面圖。 圖5係表示於圖丨所示引線框架中’使平臺部傾斜之方法 的側剖面圖。 圖6係表示使用圖m示引線框架所製造之磁感應器的平 面圖。 圖7係圖6所示磁感應器之側剖面圖。 圖8係表示本發明之第1實施例φ 貝她例中連結引線之變形例的側 剖面圖。 圖9係表示本發明之第i實施例中連結引線之其他變形例 的側剖面圖。 圖1〇係表示使用圖！所示引線框架所製造之磁感應器之 104873.doc -47- 1280399 其他例的平面圖。 圖11係表示本發明之第2實施例之引線框架的平面圖。 圖12係表示將磁感應器晶片搭載於圖11所示引線框架之 狀態的侧剖面圖。 圖丨3係表示使用圖^所示引線框架所製造之磁感應器的 側剖面圖。Only one protruding piece is formed such that the protruding piece forms an A width which is wider than the half width of the platform portions 207, 209. In this configuration, when the platform portions 207 and 209 104873.doc -45 - 1280399 of the T' are inclined, the area of the front end surface of the protruding piece subjected to the pressing force becomes large, so that deformation of the protruding piece due to stress relaxation can be prevented. Therefore, the inclination angle of the platform portions 207, 209 can be stabilized. Further, similarly to the description of the first and second embodiments, the protruding pieces 219 and 221 may protrude at least from the bottom surfaces 207d and 209d of the platform portions 207 and 209. Further, the platform portions 207 and 209 may be inclined to each other at least before forming the resin molded portion 229. Further, the platform portions 207 and 209 may be formed in a circular or elliptical shape in plan view, for example, or may be formed to penetrate through a hole or a mesh shape in the thickness direction. In addition, the magnetic sensor wafers 203, 205, the platform portions 207, 209, and the leads 21 5, 2 16 can be housed inside the package as a package, and the two magnetic sensor wafers 203, 205 can also be The lower surface 229a of the resin molded portion 229 is inclined about the axis perpendicular to each other. Further, in the first to fifth embodiments described above, the magnetic sensor for detecting the magnetic direction in the three-dimensional space is described as a physical quantity sensor, but the invention is not limited thereto. The physical quantity sensor is a sensor that measures at least the orientation or direction in three-dimensional space. That is, the physical quantity sensor may be, for example, an acceleration sensor' mounted with an acceleration sensor chip that detects the size or direction of the acceleration. The embodiments of the present invention have been described in detail with reference to the drawings, but the specific structures are not limited to the embodiments, and modifications may be made without departing from the scope of the invention. 104873.doc -46- 1280399 [Industrial Applicability; j The present invention can be applied to physical sensors for measuring the orientation and direction of physical quantities such as magnetism and gravity, and can realize the miniaturization and thinning of such physical quantity sensors. . BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing a lead frame of a first embodiment of the present invention. Fig. 2 is a side cross-sectional view showing a state in which a magnetic sensor wafer is mounted on a lead frame shown in Fig. 。. Fig. 3A is an enlarged side elevational view showing a protruding piece of the lead frame shown in Fig. 3; Fig. 3B is an enlarged cross-sectional view showing a protruding piece of the lead frame shown in Fig. 。. Figure 3C is a diagram! An enlarged cross-sectional view showing a method of forming a tab of the lead frame shown. Figure 4 is a side cross-sectional view showing a method of tilting the land portion in the lead frame shown in Figure 。. Fig. 5 is a side cross-sectional view showing a method of tilting the land portion in the lead frame shown in Fig. 。. Fig. 6 is a plan view showing a magnetic inductor manufactured using the lead frame shown in Fig. m. Figure 7 is a side cross-sectional view of the magnetic inductor shown in Figure 6. Fig. 8 is a side cross-sectional view showing a modification of the connecting lead in the example of the first embodiment of the present invention. Fig. 9 is a side cross-sectional view showing another modification of the connecting lead in the i-th embodiment of the invention. Figure 1 shows the use of the map! The magnetic sensor manufactured by the lead frame shown is 104873.doc -47-1280399. Figure 11 is a plan view showing a lead frame of a second embodiment of the present invention. Fig. 12 is a side cross-sectional view showing a state in which a magnetic sensor wafer is mounted on the lead frame shown in Fig. 11. Figure 3 is a side cross-sectional view showing a magnetic inductor manufactured using the lead frame shown in Figure 2.

圖14係表示使用本發明之第2實施例變形例之引線框架 之磁感應器的側剖面圖。 圖15係表示本發明之第1及第2實施例中突出片之變形例 的側剖面圖。 圖係表示圖15所示突出片之彎曲加工的側剖面圖。 圖17係表示本發明之第1及第2實施例中突出片之其他變 形例的側剖面圖。 圖8係表不本發明之第1及第2實施例中突出片之此外复 他變形例的側剖面圖。 一 ^ 系表示本發明之第丨實施例中突出片之第丨變形例的 圖2〇係表示將磁感應器晶片搭載於 狀態的側剖面圖。 圖19所示引線框架 之 變形例的 。^表示本發明之第1實施例中突出片之第2 平面圖。 圖22係表示將磁感應器晶片搭載 狀態的側剖面圖。 y線框力木之 之第3變形例的 圖23係表示本發明之第1實施例中突出片 104873.doc -48- 1280399 平面圖。 圖24係表7F將磁感應n晶片搭載於圖23所 狀態的侧剖面圖。 木之 圖25係表示本發明之第1實施例中突出片之第4變形例的 平面圖。 圖26係表不將磁感應器晶片搭載於圖25所示引線框架之 狀態的側剖面圖。 圖27係表示本發明之第1實施例中突出片之第5變形例的 平面圖。 圖28係表示將磁感應器晶片搭載於圖27所示引線框架之 狀態的側剖面圖。 圖29係表示本發明實施例之引線框架之各部尺寸的概略 側面圖。 圖Μ係表示本發明之實施例之磁感應器的側剖面圖。 圖31係表示本發明之第3實施例之引線框架的平面圖。 圖32係表示將磁感應器晶片搭載於圖3丨所示引線框架之 狀態的側剖面圖。 圖33係表示於圖3 1所示引線框架中，使平臺部傾斜之方 法的側剖面圖。 圖34係表示於圖31所示引線框架中，使平臺部傾斜之方 法的側剖面圖。 圖35係表示使用圖31所示引線框架所製造之磁感應器的 平面圖。 圖3 6係表示圖3 5所示磁感應器之側剖面圖。 104873.doc -49- 1280399 圖37係表示將磁感應器晶片搭載於本發明第3 變形例的引線框架之狀態的平面圖。 轭例之 圖38係圖37之G-G線箭頭方向剖面圖。 圖39係表示本發明p實施例之其他變形例之引線框加 的平面圖。 ^ 圖40係表示本發明第4實施例之引線框架及磁感應器的 平面圖。 圖41係圖40之G-G線箭頭方向剖面圖。 圖42係圖40之H-H線箭頭方向剖面圖。 圖43係表示於圖40所示引線框架中，使平臺部傾斜之方 法的側剖面圖。 圖44係表示於圖40所示引線框架中，使平臺部傾斜之方 法的側剖面圖。 圖45係表示使用圖40之引線框架所製造之磁感應器的平 面圖。 圖46係圖45之Ι·Ι線箭頭方向剖面圖。 圖47係圖45之J-J線箭頭方向剖面圖。 圖48係表示本發明第5實施例之引線框架及磁感應器的 平面圖。 【主要元件符號說明】 1 ’ 2，101，142， 引線框架 146 ， 201 ， 231 3，3，103，105， 磁（物理量）感應器晶片 203 ， 205 104873.doc -50-Fig. 14 is a side sectional view showing a magnetic inductor using a lead frame according to a modification of the second embodiment of the present invention. Fig. 15 is a side sectional view showing a modification of the protruding piece in the first and second embodiments of the present invention. The figure shows a side sectional view of the bending process of the protruding piece shown in Fig. 15. Fig. 17 is a side sectional view showing another modification of the protruding piece in the first and second embodiments of the present invention. Fig. 8 is a side cross-sectional view showing a modification of the protruding piece in the first and second embodiments of the present invention. Fig. 2 is a side cross-sectional view showing a state in which a magnetic sensor wafer is mounted in a state in which a second modification of the protruding piece in the third embodiment of the present invention is shown. Fig. 19 shows a modification of the lead frame. ^ is a second plan view showing a protruding piece in the first embodiment of the present invention. Fig. 22 is a side sectional view showing a state in which a magnetic sensor wafer is mounted. Fig. 23 is a plan view showing a protruding piece 104873.doc - 48 - 1280399 in the first embodiment of the present invention. Fig. 24 is a side sectional view showing the state in which the magnetic induction n wafer is mounted in Fig. 23 in Table 7F. Fig. 25 is a plan view showing a fourth modification of the protruding piece in the first embodiment of the present invention. Fig. 26 is a side sectional view showing a state in which the magnetic sensor wafer is not mounted on the lead frame shown in Fig. 25. Fig. 27 is a plan view showing a fifth modification of the protruding piece in the first embodiment of the present invention. Figure 28 is a side cross-sectional view showing a state in which a magnetic sensor wafer is mounted on the lead frame shown in Figure 27 . Fig. 29 is a schematic side view showing the dimensions of respective portions of the lead frame of the embodiment of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a side sectional view showing a magnetic inductor of an embodiment of the present invention. Figure 31 is a plan view showing a lead frame of a third embodiment of the present invention. Figure 32 is a side cross-sectional view showing a state in which a magnetic sensor wafer is mounted on a lead frame shown in Figure 3A. Figure 33 is a side cross-sectional view showing a method of tilting the land portion in the lead frame shown in Figure 31. Figure 34 is a side cross-sectional view showing a method of tilting the land portion in the lead frame shown in Figure 31. Figure 35 is a plan view showing a magnetic inductor manufactured using the lead frame shown in Figure 31. Figure 3 is a side cross-sectional view showing the magnetic inductor shown in Figure 35. 104873.doc -49- 1280399 FIG. 37 is a plan view showing a state in which a magnetic sensor wafer is mounted on a lead frame according to a third modification of the present invention. Fig. 38 is a cross-sectional view taken along the line G-G of Fig. 37. Fig. 39 is a plan view showing the lead frame of another modification of the embodiment p of the present invention. Fig. 40 is a plan view showing a lead frame and a magnetic inductor according to a fourth embodiment of the present invention. Figure 41 is a cross-sectional view taken along the line G-G of Figure 40. Figure 42 is a cross-sectional view taken along the line H-H of Figure 40. Figure 43 is a side cross-sectional view showing a method of tilting the land portion in the lead frame shown in Figure 40. Figure 44 is a side cross-sectional view showing a method of tilting the land portion in the lead frame shown in Figure 40. Figure 45 is a plan view showing a magnetic inductor manufactured using the lead frame of Figure 40. Figure 46 is a cross-sectional view taken along line 45 of Figure 45. Figure 47 is a cross-sectional view taken along line J-J of Figure 45 in the direction of the arrow. Figure 48 is a plan view showing a lead frame and a magnetic inductor according to a fifth embodiment of the present invention. [Major component symbol description] 1 '2,101,142, lead frame 146, 201, 231 3,3,103,105, magnetic (physical quantity) sensor wafer 203, 205 104873.doc -50-

1280399 7 ， 9 ， 107 ， 109 ， 207 ， 209 11 ， 111 ， 211 15 ， 115 ， 117 ， 215 ， 216 16 ， 17 ， 217 119 ， 121 30 ， 31 ， 140 ， 230 131 ， 133 平臺部 框架部 引線 連結引線 連結部 磁感應器（物理量感應器） 絕緣薄膜 104873.doc -51 -1280399 7 , 9 , 107 , 109 , 207 , 209 11 , 111 , 211 15 , 115 , 117 , 215 , 216 16 , 17 , 217 119 , 121 30 , 31 , 140 , 230 131 , 133 Lead connection part magnetic sensor (physical quantity sensor) Insulation film 104873.doc -51 -

Claims (1)

1280399 十、申請專利範圍： i 一種引線框架，其係包含金屬性薄板者，且具備： 至少兩個平臺部，其裝載有物理量感應器晶片，具有 小於上述物理量感應器晶片之載置面之面積； 矩形框架部，其包圍上述平臺部； 後數引線’其自上述框架部向上述平臺部方向延伸， 配置於上述平臺部之周圍，且包含連結上述框架部與上 述各平臺部之連結引線；及 易變形部’其形成於上述連結引線，藉由變形使上述 平臺部傾斜； 上述物理量感應器晶片使上述載置面於上述框架部之 厚度方向與上述平臺部及上述複數引線之一部分重疊而 載置。 且 2·如請求項丨之引線框架，其中上述連結引線係排列於上述 框架部之一邊之上述引線，於該連結引線之中途部形成 易變形部，其以基準軸線為中心，用以使上述平臺部相 對於上述框架部傾斜。 3.如請求項2之引線框架，其中上述連結引線具有位於上述 中途部至上述平臺部之間的前端部及較上述中途部離開 平臺部而設置的基端部，上述平臺部與上述前端部配^ 於相對於上述基端部而於上述金屬製薄板厚度方 * 偏離 之位置。 4. 如請求項2之引線框架，其中位於上述中途部至、、，士 / 上述平臺 部之間的上述連結引線之表面，與上述平喜 丁至哔之表面共 104873.doc 1280399 同形成同一平面。 5· ^青求項^之引線框架，其中上述連結引線於通過上述平 臺部中心之中心軸線之線對稱位置，自各平臺部突出一 對而連結於上述框架部，並且具有可變形之扭曲部作為 上述易變形部’該扭曲部及上述平臺部配置於相對於上 述引線於上述引線框架厚度方向偏離之位置。 6.如請求項5之引線框架，其中於上述平臺部表面載置有上 述物理量感應器晶片之狀態下，於對向於上述物理量感 應=阳片之上述引線之表面，形成有於上述金屬製薄板 之厚度方向凹陷之凹部。 如明求項1之引線框架，其中進而具有包含絕緣材料之薄 片狀、、、邑緣溥膜，其設置於載置上述物理量感應器晶片之 上述平臺部之表面。 8·如請求項7之引線框架，其中於上述至少兩個平臺部之一 方平室部’形成有朝向他方平臺部突出之突出引線。 9·如巧求項7之引線框架，其中上述平臺部及上述連結引線 匕έ延長引線’其自連結於上述平臺部之各引線之前端 延伸。 1〇·如請求項9之引線框架，其中 上述平臺部由複數上述延長引線所形成； 於上述延長引線之前端形成有突出引線，其配置於不 與上述物理量感應器晶片重疊之區域。 11.如請求項7之引線框架，其中 上述複數引線具備··第1引線，其經由上述連結引線連 104873.doc 1280399 結於上述平臺部；及第2引線，其與上述第⑶線共同排 列於沿上述基準軸線之方向； 於上述第2引線’形成有自其前端越過上述基準轴線而 延伸之鄰接引線； 上述鄰接引、線，其與上述平臺部並排酉己置於沿上述基 準軸線之方向，且可以上述基準軸線為中心，相對於I 述框架部傾斜所形成。 鲁12.如請求項7之引線框架，其中於上述絕緣薄膜之表面及背 面形成有接著層。 13.如請求項！之引線框架，其中各上述平臺部配置於上述引 線框架内側區域之較其他角部更接近一個角部之位置， 磁感應器晶片以僅與引線框架一邊所設置之複數引線重 疊的方式配置。 14·如請求項13之引線框架，其中 上 述矩形框架部形成為俯視大致正方形狀 • 上述兩個平臺部沿上述内側區域同一邊而配置。 15.如請求項13之引線框架，其中上述兩個平臺部配置於上 述内側區域之對角線上。 •封包，其形成為俯視大致 ’其傾斜固定於上述封包之 16· —種物理量感應器，其具備 矩形狀；物理量感應器晶片 内部，俯視大致矩形狀；及複數引線，其自由上述封包 所劃分之俯視大致矩形狀之内側區域的各邊向上述封包 内側突出，並且自上述封包之下面露出於外方；u 於上述内侧區域之角部，形成有不配置上述引線之不 104873.doc 1280399 設置區域； 上述物理量感應器晶片以其一邊沿上述内側區域之一 邊的方式，覆蓋於上述不設置區域，並於上述封包之厚 度方向，僅與排列於上述内側區域之一邊的上述引線重 疊而配置。 一種物理量感應器，其具有：平臺部，其載置物理量感 應器晶片；複數引線，其配置於上述平臺部之周圍，且 包含與上述平臺部連結之連結引線；易變形部，其形成 於上述連結引線，藉由變形而使上述平臺部傾斜；物理 量感應器晶片，其載置於傾斜之上述平臺部，並使端部 與上述複數引線之-冑分重疊而配置於上述引線之厚度 方向；及成型樹脂’其將上述平臺部、上述複數引線以 及上述物理重感應晶片一體固定。1280399 X. Patent Application Range: i A lead frame comprising a metallic thin plate and having: at least two platform portions loaded with physical quantity sensor chips having an area smaller than the mounting surface of the physical quantity sensor chip a rectangular frame portion surrounding the platform portion; a rear lead wire extending from the frame portion toward the platform portion, disposed around the platform portion, and including a connecting lead connecting the frame portion and each of the platform portions; And the easily deformable portion is formed on the connecting lead, and the platform portion is inclined by deformation; the physical quantity sensor wafer has the mounting surface overlapped with the platform portion and one of the plurality of leads in a thickness direction of the frame portion Placed. And the lead frame of the request item, wherein the connecting lead is arranged on one side of the frame portion, and a deformable portion is formed in a middle portion of the connecting lead, and is centered on a reference axis for making the above The platform portion is inclined with respect to the frame portion. 3. The lead frame of claim 2, wherein the connecting lead has a front end portion between the intermediate portion and the platform portion, and a base end portion provided to extend away from the platform portion from the intermediate portion, the platform portion and the front end portion The position is offset from the base end portion by the thickness of the metal thin plate. 4. The lead frame of claim 2, wherein the surface of the connecting lead located between the middle portion to the middle portion and the platform portion is formed in the same manner as the surface of the flat surface to the flat surface of 104873.doc 1280399 flat. 5. The lead frame of the present invention, wherein the connecting lead is symmetrical at a line passing through a central axis of the center of the platform portion, and a pair of protruding portions are connected from the respective platform portions to the frame portion, and has a deformable twist portion as The twisted portion and the flat portion are disposed at positions deviated from the lead in the thickness direction of the lead frame. 6. The lead frame according to claim 5, wherein the surface of the lead wire facing the physical quantity sensing = positive sheet is formed on the surface of the lead wire on which the physical quantity sensor wafer is placed on the surface of the platform portion a recessed portion of the thin plate that is recessed in the thickness direction. A lead frame according to claim 1, further comprising a sheet-like, insulating film comprising an insulating material disposed on a surface of said land portion on which said physical quantity sensor wafer is placed. 8. The lead frame of claim 7, wherein one of the at least two platform portions is formed with a protruding lead protruding toward the other platform portion. 9. The lead frame of claim 7, wherein the platform portion and the connecting lead 匕έ extension lead ′ extend from a front end of each lead connected to the platform portion. The lead frame of claim 9, wherein the platform portion is formed by a plurality of the extension leads; and a protruding lead is formed at a front end of the extension lead, and is disposed in a region not overlapping the physical quantity sensor wafer. 11. The lead frame of claim 7, wherein the plurality of leads comprise a first lead connected to the platform portion via the connecting lead 104873.doc 1280399; and a second lead arranged in line with the (3) line In the direction along the reference axis; the second lead ' is formed with an adjacent lead extending from the front end thereof beyond the reference axis; the adjacent lead wire is placed along the reference axis along the reference axis The direction is formed by being inclined with respect to the frame portion as the center of the reference axis. A lead frame according to claim 7, wherein an adhesive layer is formed on the surface and the back surface of the insulating film. 13. As requested! In the lead frame, each of the land portions is disposed at a position closer to a corner than the other corners of the inner side of the lead frame, and the magnetic sensor wafer is disposed so as to overlap only the plurality of leads provided on one side of the lead frame. The lead frame of claim 13, wherein the rectangular frame portion is formed in a substantially square shape in plan view. The two platform portions are disposed along the same side of the inner region. 15. The lead frame of claim 13, wherein the two platform portions are disposed on a diagonal of the inner region. The package is formed in a plan view of a physical quantity sensor that is obliquely fixed to the package, and has a rectangular shape; the inside of the physical quantity sensor wafer has a substantially rectangular shape in plan view; and a plurality of leads which are separated by the above-mentioned packet Each side of the inner portion of the substantially rectangular shape in plan view protrudes toward the inside of the package, and is exposed to the outside from the lower surface of the package; u is formed at a corner portion of the inner portion, and is not provided with the lead wire 104873.doc 1280399 The physical quantity sensor wafer is disposed so as to cover the non-installed area along one side of the inner side region, and is disposed so as to overlap only the lead line arranged on one side of the inner side in the thickness direction of the package. A physical quantity sensor having a platform portion on which a physical quantity sensor wafer is placed, a plurality of lead wires disposed around the platform portion, and a connection lead connected to the platform portion, and a deformable portion formed on the platform Connecting the lead wire to tilt the platform portion by deformation; the physical quantity sensor wafer is placed on the inclined platform portion, and the end portion is overlapped with the plurality of lead wires and disposed in the thickness direction of the lead wire; And a molding resin that integrally fixes the platform portion, the plurality of leads, and the physical re-sensing wafer. 104873.doc104873.doc
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