TWI278990B - Matrix array devices with flexible substrates - Google Patents
Matrix array devices with flexible substrates Download PDFInfo
- Publication number
- TWI278990B TWI278990B TW091106663A TW91106663A TWI278990B TW I278990 B TWI278990 B TW I278990B TW 091106663 A TW091106663 A TW 091106663A TW 91106663 A TW91106663 A TW 91106663A TW I278990 B TWI278990 B TW I278990B
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- Taiwan
- Prior art keywords
- substrate
- region
- matrix
- thin film
- regions
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 97
- 239000011159 matrix material Substances 0.000 title claims abstract description 48
- 239000004065 semiconductor Substances 0.000 claims abstract description 49
- 239000000463 material Substances 0.000 claims abstract description 22
- 239000010409 thin film Substances 0.000 claims description 23
- 239000010408 film Substances 0.000 claims description 8
- 239000004973 liquid crystal related substance Substances 0.000 claims description 8
- 239000002861 polymer material Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 2
- 238000005452 bending Methods 0.000 abstract description 9
- 239000004020 conductor Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920000307 polymer substrate Polymers 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 206010073306 Exposure to radiation Diseases 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- -1 polythioimines Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 235000009827 Prunus armeniaca Nutrition 0.000 description 1
- 244000018633 Prunus armeniaca Species 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000012769 display material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000016507 interphase Effects 0.000 description 1
- 230000000968 intestinal effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical class [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001021 polysulfide Polymers 0.000 description 1
- 239000005077 polysulfide Substances 0.000 description 1
- 150000008117 polysulfides Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Human Computer Interaction (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Multimedia (AREA)
- Theoretical Computer Science (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Description
1278990
- 發明領域 本發月與矩p車陣列裝置有關,其包括—薄膜矩陣電路, 其包含承載於-彈性基板上之半導想裝置。該裝置可為一 影像感測器或-平面顯示器,例如:⑯晶顯示器或其它種 類之大面㈣陣電子裝置’諸如薄膜請儲存或記憶裝置 、熱顯像裝置或接觸或指紋感測陣列裝置。 發明背景 目前在薄膜矩陣電路上之發展興趣濃厚,其具薄膜電晶 體fFTS)、薄膜光二極體或其它針對大面積電子應用之非 昂貝基板上之半導體電路構件。亦著重於利用彈性基板(諸 如絕緣聚合物材料或金屬箔)而非習知之玻璃發展彈性裝置 ,俾提供如f曲顯示器或其它矩陣陣列裝置,取代因人體 工學設計、美學或其它緣故採用之簡單平面裝置,例如在 造型電視接收機中採用非習知機殼外型、可攜式顯示裝置 、孩童的玩具及汽車顯示等,其中欲使裝置與所欲合併之 物件外型相符。針對此類目的,裝置可以永久形成所需外 型,例如以製模處理為之。或者裝置可簡單而具彈性,使 其得以重複摺疊或捲動,對可攜式產品之空間節省尤具吸 引力。在彈性基板上之矩陣陣列裝置示例及其製造方法述 如 N.D. Young 等人於 SID Proceeding Euro Display 1996 第 555至 558 頁’名稱為 “AMLCDs and Electronics on Polymer
Substrates”乙文,在此以引用的方式併入本文參考。 一種典型的主動矩陣液晶(LC)顯示裝置,例如US-A-5130829所述,包括一對基板,至少其中之一係可穿透材料 4 本纸張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 1278990 五 、發明説明( ,而該對基板〜週邊密封,其間置有LC材料,基板件並具間 距構件,俾維持所欲之隔離。一基板之内表面承載一主動 矩陣、薄膜、界定各可定址像素(各含一半導體切換構件)之 行列矩陣之電路,典型為一 TFT(薄膜電晶體)以及可穿透或 反射像素電極。各像素係位於延伸於像素之行列間之各行 列位址線組交點,而TFT則連結於相關行列線與其像素電極 間。其它如彩色顯示器、彩色濾波器構件陣列之基板内表 面一般承載一為陣列中所有像素共用之可穿透電極。構成 胞f陣中之半導體切換構件之TFTs—般係製為個別隔離之 無晶或多晶矽材料或塑膠有機材料之半導體島,其為配置 於基板間,經圖樣化之連續半導體層所界定,留下配置於 行列矩陣中之半導體材料獨立區。 在製彈性裝置時,為考量低成本、質輕與物理彈性, 基板般均採用聚合物材料。一種主動矩陣陣列裝置示例 即採用上述材料,述如us_A_57768〇3。此類矩陣陣列裝置 可繞一軸f曲,亦即永久或暫時為圓柱形,例如使其在未 使用時得以捲起而節省空間。如果半導體島與響曲半經相 較夠小,則此類彎曲一般可相當可靠地使受損威脅降低, 俾不致受此類彎曲過大影響。當其係以金屬形成時,連接 位址線及像素電極可以此方式容忍弯曲。在金屬線及像素 電極包含可穿透傳導性材料(諸如IT〇)的狀況下,為使其具 承又此類f曲效應之能力,一般係以彈性型#印製 件改善之。 — 但在f曲或折f裝置時常導致損壞,尤以非繞單一轴蠻 尽紙張尺腸丨_家料_ -5 1278990 A7
Γ二Π如當所形成之裝置係為部份球形時。在 此狀况下,薄膜層之形變更大並已造成損宝, 引致之斷裂,在半導體或供半導體構件使;之介 ,即使在圖樣化相當小之島時亦然。 冤θ為最 發明概要 、依t發明之—態樣’提供之彈性矩陣陣列裝置包括一承 載於彈性基板表面上之薄膜矩陣電路,其中矩陣電路包含 以規律陣列配置,並佔據基板之各獨立區域之半導體裝置 ,其中與半導體裝置所佔區域遠離之基板選擇區包含弱區 ,該處之基板較具彈性。 依本發明之另一態樣,提供一種彎曲矩陣陣列裝置,其 包括在一基板表面上承載之薄膜矩陣電路,其中矩陣電路 包含以規律矩陣配置之半導體裝置,其並佔據基板之各獨 立區,其中基板包括與半導體裝置所佔區域遠離之選擇區 域之弱區,裝置之彎曲大抵上可容納在該區之基板形變。 此一裝置可藉由將一初始平坦裝置製模使其永久具彎曲外 型為之。 藉由蓄意配置經選擇,進而預定之基體較弱區,接著促 使這些區較基板其它區優先自初始平坦型式彎曲或彎折, 並將這些區域配置遠離形成半導體裝置之半導體島區,當 彎曲或彎折基板時,在這些島之形變以及後續對其部件層 之損耗較低。基板因·彎曲造成之尺寸變化因而導致非等向 性以及可容忍區域,例如僅在相對裸露基板區中’南於半 導體裝置存在區。 -6- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 1278990 A7 _________B7 五、發明説明(4 "----- 可藉由局部薄化基板產生弱區,例如藉由㈣等為之。 杏另一示例中’此薄化-般可利用多層(二或更多)基板結構 二之其中一之經圖樣化,並在矩陣電路製造後較佳。 或者有其當才木用聚合物基板時,在這些區域之基板材料應 力或熱性質可經刻意改良。例如在基板包含聚合物材料^ 情況下,可藉由將所需區域之聚合物暴露於溶劑中而軟化 之。相反地,可刻意在相對較弱之區域,尤其是承載半導 體裝置區域將聚合物材料硬化,例如藉由暴露於輻射中為 之,俾利相異彎曲。或者可增加聚合物材料經輻射暴露區 以外區域之軟化點,俾利相異製模。 弱區可包括延伸於半導體裝置間基板區之弱線。半導體 裝置係以如行列陣列配置者,這些線可彼此相間延伸於半 導體裝置之列及/或行間。線沿一方向延伸,例如列間,可 促進裝置之圓柱形捲動。線沿列與行間正交方向延伸可促 進更為複雜之彎曲,例如球形製模之所需。 弱線易於以局部降低在這些區域之基板厚度形成之。 或者可以相對硬度較高者形成半導體島下方基板區,例 如使這些島下方區域之基板厚度大於基板其它區域之厚度 為之。 在裝置包括一顯示裝置(具另一相間基板)的情況下,則此 另一基板可具類似弱線。這些弱線延伸於之前首先描述之 基板上之像素電極列及/或行間區域。 圖式簡述 以下即將參閱隨附之圖式,藉由示例描述依本發明之矩 本纸張尺度適用中國國家標準(CNS) A4規格(210 X297公釐) 1278990 A7 B7 五、發明説明(6 ) PEDOT聚合物,分別視像素係為反射形或穿透形而定。一 係類似的彈性聚合物材料之相對基板22承載連續可穿透電 極23,其為陣列中所有的顯示構件共用,並為間隔物(未圖 示)與基板20相間。LC方位膜26與27係為連續層,分別覆蓋 承載於基板22與23上之結構。此兩基板之週邊密封,其間 並含液晶材料24。前述由N. Young提出之文中描述典型製 程以及供製造AMLCD之材料採用聚合物基板,茲將其引入 本文供參,並在各方面做進一步詳述。 如該文所述,接著一般承載主動矩陣電路之基板可包括 聚合物材料,諸如聚硫亞胺、聚續綱醚、聚芳香族、高溫 聚酯碳酸鹽、polyethylenenapthalta及聚乙烯對苯二甲酸, 其膜厚度約100-200 μιη。亦如該文所述,供分佈TFTs之半 導體層係如圖樣化一連續層形成之獨立島,各島所佔面積 相當小。並與相關行列位址導體交點相鄰。 此一顯示裝置初始係由一平坦之平面化結構形成,其一 般係可繞一線性軸彎曲為永久或暫態圓柱形,俾形成稍微 彎曲而無不當問題之顯示,其所具彎折半徑不致過低。但 仍可能造成損害。如需較複雜外型,例如部份球形,其中 裝置需可延不只一軸彎曲,接著伴隨更大的基板扭曲。造 成基板之大尺寸變化,尤其是承載主動矩陣電路系統處, 導致其表面之薄膜塗料斷裂,尤以TFTs之半導體材料為甚 ,即使已圖樣化為小面積亦·然。同樣地可能發生於絕緣與 介電膜,然金屬一般因延展性較高而可容忍此類彎曲至較 大延伸,不易受到損害。如此類金屬以及IT〇層材料係供像 -9- I紙張尺度適用中國國家標準(CNS) Α4規格(210X297公^---- 1278990 A7 _____B7_ _ _ 五、發明説明(8 ) 至相關像素TFT 12之汲極,其係於像素相關行列位址導體 間重整區域形成’而閘極與源極則分別連結至列與行位址 導體。在此特殊示例中,TFT 12主要係在行導體下方,因 而具緊密配置’例如:如有所需,TFT可橫向位於行列導體 重疊處並緊密相鄰之。 圖5顯示沿線B-B之橫剖圖,闡示TFT 12—般結構。圖樣 化而實際獨立呈島狀之半導體層3〇包含摻雜(n+)源極與汲極 接點區32與33,其中間本質區34則構成通道區,其係在一 絕緣層36上形成,例如矽氧化物或氮化物,並承載於基板 20平面上經與島類似之圖樣化。延伸於半導體層3〇間者係 一閘極介電層37,例如氮化矽。後續以如鋁或鉻等金屬形 成之列位址導體14,於本質區34上方延伸於此層,並充作閘 極之用。 一絕緣層39,其亦為矽氮化物或氧化物,並配置於閘極 與閘極介電層37暴露部份。行位址導體16,其亦為諸如鋁 等金屬,延伸於此結構上並經由在層37與39中形成之接點 、 連結至源極接點區32。故此TFT包括一系列疊置之薄膜層, 其經圖樣化於一島並位於像素相關行列位址導體間重疊區 域之獨立區。 此TFTi汲極接點區30包含一整體橫向投射之延伸30,, 其連結至像素電極18。像素電極18可為金屬(供反射型顯示) 或ITO(供穿透型顯示)。 像素陣列之TFTs係利用習知PECVD與微影製程自配置於 基板20上之共用薄膜層與位址導體組同時製造而成,其中 製程係在大面積絕緣基板上製造薄膜電子構件(構成主動矩 -11 . 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
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1278990 A7 厂 —_____B7_ 五、發明説明(11 ) 路結構全同於先前具體實施例,其主要差異在於基板2〇經 過改良使得基板之彎曲僅在與TF1^#構位置間隔處,當基板 臂曲時係相對空礦區。爰此,藉由基板2〇在該等區域以外 區域之全面薄化,蓄意將基板製得相對於TFTs下方而較弱 之區域。因此如圖7所示,基板2〇在洽位於構成tfTs之薄膜 層島下方之區域60厚度大於基板其它區域厚度。較厚區6〇 大抵上為圓形較佳,如圖6虛線所示,而非與薄膜島實際外 型相符’在彎曲時,有助於周圍基板之更均勻扭曲。較厚 區域之尺寸稍大於TFT結構,使其稍微延伸於半導體所佔區 域之外,並具一傾斜(角錐形)側壁62 ,有助於避免金屬位址 導體在基板彎曲時斷裂。 在區域62以外之基板2〇厚度與一般習知聚合物基板所採 用者類似,在區域60厚度增加,在這些區域具硬化功能而 能阻止基板彎曲。藉由示例可知聚合物基板2〇整體厚度可 為約100-200 μηι,而薄化區,例如區5〇與52,則約5〇1〇〇 μιη 〇 在上述兩具體實施例中,部份用以形成TFTs而沉積之半 導體與介電薄膜層均經自基板移除,而TFTs除外。但其可 忐非自然發生’這些層中TFTs不需要的區域可能仍殘留, 俾可能簡化裝置製造,但當然這些無用區域在基板彎曲時 可能易於斷裂。 裝置中承載連續共用電極23之第二基板22厚度低於基板 20較佳,俾使其彈性較大。對採用與像素電極相關之彩色 濾波器構件之彩色顯示裝置而言,彩色濾波器構件可承載 -14· 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公董) 1278990 A7 ____ B7 五、發明説明(14 ) 部區域,諸如主動裝置之接點區,並以與半導體和主動裝 置之介電薄膜層類似方式形成於島中。 預期傳導性材料可顯現較大彈性,例如可利用傳導聚合 物旋上(spin-on)材料或可印製糊狀物取代供位址導體使用 之金屬。 雖然在上述具體實施例中已採用聚合物材料做為基板, 預期彈性金屬箔可用以取代為局部薄化(例如藉由蝕刻為之) 界定之弱區。 雖然本發明已參考主動矩陣液晶顯示裝置描述之,尤其 應瞭解其在相異顯示材料(例如場致發光材料)之矩陣顯示裝 置以及其他類型之矩陣陣列裝置(具矩陣構件之規律矩陣, 包含主動半導體裝置)中施用亦具類似優點。厚者之示例包 含大面積影像感測器,其採用之光感測性像素包括一光二 極體或類似元件、主動矩陣接觸感測矩陣、薄膜資料儲存 及記憶裝置。這些相異類型之薄膜電子陣列裝置僅需使用 一基板。 總結此揭示,一矩陣陣列裝置,例如一主動矩陣陣列裝 置、影像感測器等,包括一承載於彈性基板上之矩陣電路 ,其中電路包含佔獨立區域之半導體裝置陣列,諸如tfTs 。遠離半導體裝置之基板選擇區域形成弱區,俾促進基板 彈性而在裝置彎曲時優先於該區域發生,俾降低對半導體 裝置之損害威脅。例如這些區域可能包括延伸於半導體裝 置間之弱區,其可藉由基板之局部薄化形成,或藉由對基 板材料之處理而改良其於預定區域之硬度。 -17- 1278990 A7 B7 五、發明説明(15 ) 由本揭示之_閱讀,熟悉此技藝者對其他改良將顯而易見 。此類改良可包含其它在此矩陣陣列裝置領域中已知之特 性,採用相容基板與其部件,可用以取代或加入此處已述 之特性。 -18- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
Claims (1)
1278990 … 第091106663號專利申請案 中文申請鼻利範圍替換本Γ92车12月) 六、申請專利範園 2. 3. 4. 5. 6. 7. 一種彈性矩陣陣列裝置,其包括在一彈性基板上之薄膜 矩陣電路,其中矩陣電路包含以規律矩陣配置之薄膜半 導體裝置,其並佔據基板之各獨立區,其中與薄膜半導 體裝置所佔區域遠離之基板選擇區包括弱區,在該處之 基板較具彈性。 一種彎曲矩陣陣列裝置,其包括在一彈性基板上之薄膜 矩陣電路,其中矩陣電路包含以規律矩陣配置之薄膜半 導體裝置,其並佔據基板之各獨立區,其中基板包括與 薄膜半導體裝置所佔區域遠離之選擇區域之弱區,裝置 之彎曲大體上可容納在該區之基板變形。 如申請專利範圍第1或2項之裝置,其中弱區包括基板之 局部較薄區。 如申請專利範圍第3項之裝置,其中局部較薄區係經由 對基板之選擇性蝕刻形成。 如申請專利範圍第3項之裝置,其中基板包括一薄片結構 ’其具至少兩^ ’其中一I經圖樣化形成局部薄區。 如申請專利範圍第1或2項之裝置,其中弱區包括基板材 料硬度較半導體裝置所佔基板區域低之基板區域。 如申請專利範圍第1項之裝置,其中基板包括聚合物材 裝 訂 線 料 8. 9. 如申請專利範圍第1項之裝置 導體裝置之基板區間弱線。 如申請專利範圍第8項之震置 其中弱區延伸為承載半 其中半導體裝置係以行 列陣列配置,以及其中弱區包括沿陣列延伸於半導體裝 本紙張尺度適用中0 S家標準(CNS) 297公釐). 1278990 六、申請專利範園 置之列及/或行間。 1〇· 範圍第1項之裝置,其中基板承載半導體裝 置之獨立區較基板其他區域厚。 其中半導體裝置各包 其中半導體裝置包括 u.如申請專利範圍第1或2項之裝置 括形成一島之半導體膜。 12_如申請專利範圍第丨或2項之裝置 薄膜電晶體。 其中裝置包括一主動 13 ·如申請專利範圍第1或2項之裝置 矩陣顯示裝置,其具顯示像素,以及其中各體 均連結至承載於基板上之各像素電極。 14·如中請專利範圍第13項之裝置,其中裝置包括—主動矩 陣液晶顯示裝置’其包含另一彈性基板,固接於承載矩 陣電路之基板,而液晶材料係配置於基板間。 15.如申請專利範圍第14項之裝置,其中另一基板具有在該 處形成之弱線。 -2 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公董)
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2001
- 2001-04-03 GB GBGB0108309.6A patent/GB0108309D0/en not_active Ceased
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- 2002-02-25 US US10/084,723 patent/US6974971B2/en not_active Expired - Fee Related
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- 2002-04-02 DE DE60234434T patent/DE60234434D1/de not_active Expired - Fee Related
- 2002-04-02 KR KR1020027016206A patent/KR20030007756A/ko not_active Application Discontinuation
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- 2002-04-02 EP EP02718454A patent/EP1384270B1/en not_active Expired - Lifetime
- 2002-04-02 WO PCT/IB2002/001173 patent/WO2002082555A2/en active Application Filing
- 2002-04-02 AT AT02718454T patent/ATE449423T1/de not_active IP Right Cessation
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TWI631702B (zh) * | 2015-12-24 | 2018-08-01 | 日商日本顯示器股份有限公司 | Display device |
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WO2002082555A3 (en) | 2003-01-03 |
WO2002082555A2 (en) | 2002-10-17 |
KR20030007756A (ko) | 2003-01-23 |
US6974971B2 (en) | 2005-12-13 |
EP1384270B1 (en) | 2009-11-18 |
GB0108309D0 (en) | 2001-05-23 |
DE60234434D1 (de) | 2009-12-31 |
EP1384270A2 (en) | 2004-01-28 |
CN1279622C (zh) | 2006-10-11 |
US20020139981A1 (en) | 2002-10-03 |
ATE449423T1 (de) | 2009-12-15 |
CN1460299A (zh) | 2003-12-03 |
JP2004519866A (ja) | 2004-07-02 |
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