TWI265180B - Thermal interface materials and methods for their preparation and use - Google Patents
Thermal interface materials and methods for their preparation and useInfo
- Publication number
- TWI265180B TWI265180B TW092109066A TW92109066A TWI265180B TW I265180 B TWI265180 B TW I265180B TW 092109066 A TW092109066 A TW 092109066A TW 92109066 A TW92109066 A TW 92109066A TW I265180 B TWI265180 B TW I265180B
- Authority
- TW
- Taiwan
- Prior art keywords
- component
- temperature
- composition
- thermal interface
- curing temperature
- Prior art date
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- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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US10/183,789 US6791839B2 (en) | 2002-06-25 | 2002-06-25 | Thermal interface materials and methods for their preparation and use |
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EP (1) | EP1579501A2 (zh) |
JP (1) | JP4532267B2 (zh) |
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AU (1) | AU2003221683A1 (zh) |
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Families Citing this family (120)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3803058B2 (ja) * | 2001-12-11 | 2006-08-02 | 信越化学工業株式会社 | 熱伝導性シリコーン組成物、その硬化物及び敷設方法並びにそれを用いた半導体装置の放熱構造体 |
TWI224384B (en) * | 2002-01-22 | 2004-11-21 | Shinetsu Chemical Co | Heat-dissipating member, manufacturing method and installation method |
US20030168731A1 (en) * | 2002-03-11 | 2003-09-11 | Matayabas James Christopher | Thermal interface material and method of fabricating the same |
US7147367B2 (en) * | 2002-06-11 | 2006-12-12 | Saint-Gobain Performance Plastics Corporation | Thermal interface material with low melting alloy |
US20040217451A1 (en) * | 2002-11-14 | 2004-11-04 | Sai-Mun Lee | Semiconductor packaging structure |
US7252877B2 (en) * | 2003-02-04 | 2007-08-07 | Intel Corporation | Polymer matrices for polymer solder hybrid materials |
WO2004075261A2 (en) * | 2003-02-19 | 2004-09-02 | Honeywell International Inc. | Thermal interconnect systems methods of production and uses thereof |
US7416922B2 (en) * | 2003-03-31 | 2008-08-26 | Intel Corporation | Heat sink with preattached thermal interface material and method of making same |
JP4272169B2 (ja) * | 2003-04-16 | 2009-06-03 | 富士通株式会社 | 電子部品パッケージ組立体およびプリント基板ユニット |
US6987671B2 (en) * | 2003-06-26 | 2006-01-17 | Intel Corporation | Composite thermal interface devices and methods for integrated circuit heat transfer |
US7030485B2 (en) * | 2003-06-26 | 2006-04-18 | Intel Corporation | Thermal interface structure with integrated liquid cooling and methods |
US7527090B2 (en) * | 2003-06-30 | 2009-05-05 | Intel Corporation | Heat dissipating device with preselected designed interface for thermal interface materials |
KR101020164B1 (ko) | 2003-07-17 | 2011-03-08 | 허니웰 인터내셔날 인코포레이티드 | 진보된 마이크로전자적 응용을 위한 평탄화 막, 및 이를제조하기 위한 장치 및 방법 |
US7132746B2 (en) * | 2003-08-18 | 2006-11-07 | Delphi Technologies, Inc. | Electronic assembly with solder-bonded heat sink |
JP2005109100A (ja) * | 2003-09-30 | 2005-04-21 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US20050228097A1 (en) * | 2004-03-30 | 2005-10-13 | General Electric Company | Thermally conductive compositions and methods of making thereof |
US7160758B2 (en) * | 2004-03-31 | 2007-01-09 | Intel Corporation | Electronic packaging apparatus and method |
US7348665B2 (en) * | 2004-08-13 | 2008-03-25 | Intel Corporation | Liquid metal thermal interface for an integrated circuit device |
CN101031614B (zh) * | 2004-10-28 | 2011-07-27 | 陶氏康宁公司 | 传导性可固化组合物 |
US20060094809A1 (en) * | 2004-11-02 | 2006-05-04 | Simone Davide L | Electrically and thermally conductive silicone adhesive compositions |
US20060097403A1 (en) * | 2004-11-10 | 2006-05-11 | Vassoudevane Lebonheur | No-flow underfill materials for flip chips |
WO2006071772A2 (en) | 2004-12-23 | 2006-07-06 | Dow Corning Corporation | Crosslinkable saccharide-siloxane compositions, and networks, coatings and articles formed therefrom |
US8092910B2 (en) | 2005-02-16 | 2012-01-10 | Dow Corning Toray Co., Ltd. | Reinforced silicone resin film and method of preparing same |
ATE551398T1 (de) * | 2005-02-16 | 2012-04-15 | Dow Corning | Verstärkte silikonharzfolie und herstellungsverfahren dafür |
JP4534062B2 (ja) | 2005-04-19 | 2010-09-01 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
CN101228311A (zh) * | 2005-05-23 | 2008-07-23 | 陶氏康宁公司 | 含糖-硅氧烷共聚物的表面处理组合物 |
KR101261256B1 (ko) * | 2005-05-23 | 2013-05-07 | 다우 코닝 코포레이션 | 사카라이드-실록산 공중합체를 포함하는 퍼스널 케어조성물 |
US8384210B1 (en) | 2005-06-07 | 2013-02-26 | Advanced Micro Devices, Inc. | Thermal interface material and semiconductor component including the thermal interface material |
US20060275608A1 (en) * | 2005-06-07 | 2006-12-07 | General Electric Company | B-stageable film, electronic device, and associated process |
EP1910471B1 (en) | 2005-08-04 | 2012-06-06 | Dow Corning Corporation | Reinforced silicone resin film and method of preparing same |
JP4634891B2 (ja) * | 2005-08-18 | 2011-02-16 | 信越化学工業株式会社 | 熱伝導性シリコーングリース組成物およびその硬化物 |
CN1927988A (zh) * | 2005-09-05 | 2007-03-14 | 鸿富锦精密工业(深圳)有限公司 | 热界面材料及其制备方法 |
WO2007040473A1 (en) * | 2005-09-19 | 2007-04-12 | Carrier Corporation | Minimization of interfacial resistance across thermoelectric devices by surface modification of the thermoelectric material |
JP2009509026A (ja) * | 2005-09-21 | 2009-03-05 | ダウ・コーニング・コーポレイション | 有機ボランアミン錯体を使用しての、常温リトグラフィー方法 |
EP1839469A2 (en) * | 2005-11-01 | 2007-10-03 | Techfilm, LLC | Thermal interface material with multiple size distribution thermally conductive fillers |
CN1962807A (zh) * | 2005-11-11 | 2007-05-16 | 鸿富锦精密工业(深圳)有限公司 | 热界面材料混合方法及*** |
JP4693624B2 (ja) * | 2005-12-19 | 2011-06-01 | 富士通株式会社 | 実装方法 |
JP5362363B2 (ja) | 2005-12-21 | 2013-12-11 | ダウ・コーニング・コーポレイション | シリコーン樹脂フィルム、その調製方法、及びナノ材料充填シリコーン組成物 |
US20070166875A1 (en) * | 2005-12-29 | 2007-07-19 | Intel Corporation | Method of forming a microelectronic package and microelectronic package formed according to the method |
KR101426316B1 (ko) * | 2006-01-19 | 2014-08-06 | 다우 코닝 코포레이션 | 실리콘 수지 필름, 이의 제조방법, 및 나노물질로 충전된실리콘 조성물 |
WO2007092118A2 (en) * | 2006-02-02 | 2007-08-16 | Dow Corning Corporation | Silicone resin film, method of preparing same, and nanomaterial-filled silicone composition |
US7527873B2 (en) * | 2006-02-08 | 2009-05-05 | American Standard Circuits | Thermally and electrically conductive interface |
WO2007097835A2 (en) * | 2006-02-20 | 2007-08-30 | Dow Corning Corporation | Silicone resin film, method of preparing same, and nanomaterial-filled silicone composition |
US20070226995A1 (en) * | 2006-03-30 | 2007-10-04 | Gregory Alan Bone | System and method for adhering large semiconductor applications to pcb |
US7718256B1 (en) | 2006-04-05 | 2010-05-18 | Northrop Grumman Corporation | Thermal interface material for electronic assemblies |
KR101460980B1 (ko) * | 2006-05-23 | 2014-11-13 | 다우 코닝 코포레이션 | 활성제를 전달하기 위한 신규한 실리콘막 형성제 |
US8097689B2 (en) * | 2006-06-20 | 2012-01-17 | Dow Corning Corporation | Curable organosilicon composition |
US20080023665A1 (en) * | 2006-07-25 | 2008-01-31 | Weiser Martin W | Thermal interconnect and interface materials, methods of production and uses thereof |
JP5411503B2 (ja) * | 2006-08-28 | 2014-02-12 | パナソニック株式会社 | 熱硬化性樹脂組成物及びその製造方法並びに回路基板 |
US7834083B2 (en) * | 2006-10-11 | 2010-11-16 | Samsung Electro-Mechanics Co., Ltd. | Nanocomposite composition comprising transparent nanoparticles |
US20080166552A1 (en) * | 2006-11-06 | 2008-07-10 | Arlon, Inc. | Silicone based compositions for thermal interface materials |
TWI344196B (en) * | 2006-11-15 | 2011-06-21 | Ind Tech Res Inst | Melting temperature adjustable metal thermal interface materials and use thereof |
KR101547343B1 (ko) * | 2007-02-20 | 2015-08-28 | 다우 코닝 코포레이션 | 수소결합 폴리오가노실록세인을 기반으로 하는 충전물 처리제 |
CN101626893B (zh) | 2007-02-22 | 2013-07-03 | 道康宁公司 | 增强硅树脂膜 |
JP5377334B2 (ja) | 2007-02-22 | 2013-12-25 | ダウ コーニング コーポレーション | 強化シリコーン樹脂フィルム |
JP2008218643A (ja) * | 2007-03-02 | 2008-09-18 | Fujitsu Ltd | 半導体装置及びその製造方法 |
EP2139629B1 (en) * | 2007-03-26 | 2018-09-05 | LORD Corporation | Method for producing heterogeneous composites |
US7462294B2 (en) * | 2007-04-25 | 2008-12-09 | International Business Machines Corporation | Enhanced thermal conducting formulations |
CN101675096B (zh) * | 2007-05-01 | 2012-12-26 | 陶氏康宁公司 | 纳米材料填充的有机硅组合物和增强的有机硅树脂膜 |
US20090020876A1 (en) * | 2007-07-20 | 2009-01-22 | Hertel Thomas A | High temperature packaging for semiconductor devices |
WO2009035907A2 (en) * | 2007-09-11 | 2009-03-19 | Dow Corning Corporation | Thermal interface material, electronic device containing the thermal interface material, and methods for their preparation and use |
CN101803009B (zh) * | 2007-09-11 | 2012-07-04 | 陶氏康宁公司 | 组合物,包括这种组合物的热界面材料,及其制备方法和用途 |
GB2455069B (en) * | 2007-11-16 | 2010-05-12 | Uriel Meyer Wittenberg | Improved led device |
US20110042124A1 (en) * | 2007-12-05 | 2011-02-24 | Mitsubishi Plastics, Inc. | Multilayer wiring substrate having cavity portion |
US20110038124A1 (en) * | 2008-04-21 | 2011-02-17 | Honeywell International Inc. | Thermal interconnect and interface materials, methods of production and uses thereof |
US7808099B2 (en) * | 2008-05-06 | 2010-10-05 | International Business Machines Corporation | Liquid thermal interface having mixture of linearly structured polymer doped crosslinked networks and related method |
KR100974092B1 (ko) * | 2008-05-30 | 2010-08-04 | 삼성전기주식회사 | 탄소나노튜브를 포함하는 도전성 페이스트 및 이를 이용한인쇄회로기판 |
US8138239B2 (en) * | 2008-12-23 | 2012-03-20 | Intel Corporation | Polymer thermal interface materials |
US7816785B2 (en) * | 2009-01-22 | 2010-10-19 | International Business Machines Corporation | Low compressive force, non-silicone, high thermal conducting formulation for thermal interface material and package |
WO2010104534A1 (en) | 2009-03-12 | 2010-09-16 | Dow Corning Corporation | Thermal interface materials and mehtods for their preparation and use |
JP5606104B2 (ja) * | 2009-03-23 | 2014-10-15 | 株式会社アドマテックス | 紫外線反射組成物及び紫外線反射成形品 |
CN102803406B (zh) * | 2009-06-12 | 2015-10-14 | 洛德公司 | 防止基底被雷击的方法 |
WO2011003948A2 (en) * | 2009-07-08 | 2011-01-13 | Henkel Ag & Co. Kgaa | Electrically conductive adhesives |
US8344053B2 (en) | 2009-09-10 | 2013-01-01 | Pixelligent Technologies, Llc | Highly conductive composites |
JP5680097B2 (ja) * | 2009-10-27 | 2015-03-04 | ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング | エポキシ化ナットシェルオイルを有する熱界面材料 |
CN102893391B (zh) | 2010-04-30 | 2017-08-29 | 铟泰公司 | 具有良好可靠性的热界面材料 |
US8647752B2 (en) * | 2010-06-16 | 2014-02-11 | Laird Technologies, Inc. | Thermal interface material assemblies, and related methods |
WO2012027073A1 (en) | 2010-08-23 | 2012-03-01 | Dow Corning Corporation | Saccharide siloxanes stable in aqueous environments and methods for the preparation and use of such saccharide siloxanes |
US20120080639A1 (en) * | 2010-10-04 | 2012-04-05 | Laird Technologies, Inc. | Potato shaped graphite filler, thermal interface materials and emi shielding |
US9980396B1 (en) | 2011-01-18 | 2018-05-22 | Universal Lighting Technologies, Inc. | Low profile magnetic component apparatus and methods |
JP5796385B2 (ja) * | 2011-07-13 | 2015-10-21 | 大日本印刷株式会社 | 有機デバイス |
WO2013074415A1 (en) * | 2011-11-15 | 2013-05-23 | Henkel Corporation | Electronic devices assembled with thermally insulating layers |
TWI484897B (zh) * | 2012-01-20 | 2015-05-11 | Lite On Technology Corp | 散熱結構與具有此散熱結構的電子裝置 |
TWI598385B (zh) * | 2012-05-10 | 2017-09-11 | 國立清華大學 | 絕緣化熱介面材料 |
US9583453B2 (en) | 2012-05-30 | 2017-02-28 | Ormet Circuits, Inc. | Semiconductor packaging containing sintering die-attach material |
JP2014003152A (ja) * | 2012-06-18 | 2014-01-09 | Dow Corning Toray Co Ltd | サーマルインターフェース材の形成方法および放熱構造体 |
US9005330B2 (en) * | 2012-08-09 | 2015-04-14 | Ormet Circuits, Inc. | Electrically conductive compositions comprising non-eutectic solder alloys |
TW201439264A (zh) * | 2012-12-20 | 2014-10-16 | Dow Corning | 製造電子裝置的方法 |
US9157019B2 (en) * | 2013-03-26 | 2015-10-13 | Jiali Wu | Thermal conductivity improved composition with addition of nano particles used for interface materials |
JP2017504715A (ja) | 2013-12-05 | 2017-02-09 | ハネウェル・インターナショナル・インコーポレーテッド | 調節されたpHを有するメタンスルホン酸第一スズ溶液 |
TWI657132B (zh) | 2013-12-19 | 2019-04-21 | 德商漢高智慧財產控股公司 | 具有基質及經密封相變材料分散於其中之組合物及以其組裝之電子裝置 |
US20150184053A1 (en) * | 2013-12-27 | 2015-07-02 | Shankar Krishnan | Gasketted thermal interface |
KR101677322B1 (ko) * | 2014-04-16 | 2016-11-17 | 주식회사 동부하이텍 | 반도체 패키지 및 이를 제조하는 방법 |
WO2016004565A1 (en) | 2014-07-07 | 2016-01-14 | Honeywell International Inc. | Thermal interface material with ion scavenger |
CN107250317A (zh) | 2014-12-05 | 2017-10-13 | 霍尼韦尔国际公司 | 具有低热阻的高性能热界面材料 |
WO2017044712A1 (en) | 2015-09-11 | 2017-03-16 | Laird Technologies, Inc. | Devices for absorbing energy from electronic components |
DE102015118245A1 (de) * | 2015-10-26 | 2017-04-27 | Infineon Technologies Austria Ag | Thermisches Schnittstellenmaterial mit definierten thermischen, mechanischen und elektrischen Eigenschaften |
US10312177B2 (en) | 2015-11-17 | 2019-06-04 | Honeywell International Inc. | Thermal interface materials including a coloring agent |
US10685763B2 (en) | 2016-01-19 | 2020-06-16 | Xerox Corporation | Conductive polymer composite |
US10796813B2 (en) * | 2016-02-16 | 2020-10-06 | Xerox Corporation | Conductive polymer composite |
KR102554661B1 (ko) | 2016-03-08 | 2023-07-13 | 허니웰 인터내셔널 인코포레이티드 | 상 변화 물질 |
US10501671B2 (en) | 2016-07-26 | 2019-12-10 | Honeywell International Inc. | Gel-type thermal interface material |
US20180030328A1 (en) * | 2016-07-26 | 2018-02-01 | Honeywell International Inc. | Gel-type thermal interface material |
US11041103B2 (en) | 2017-09-08 | 2021-06-22 | Honeywell International Inc. | Silicone-free thermal gel |
US10428256B2 (en) | 2017-10-23 | 2019-10-01 | Honeywell International Inc. | Releasable thermal gel |
CN108192576B (zh) * | 2017-12-05 | 2021-02-02 | 云南靖创液态金属热控技术研发有限公司 | 一种液态金属热界面材料及其制备方法和应用 |
US11072706B2 (en) | 2018-02-15 | 2021-07-27 | Honeywell International Inc. | Gel-type thermal interface material |
US11254563B2 (en) * | 2018-04-25 | 2022-02-22 | Intel Corporation | Mold material architecture for package device structures |
EP3794086A4 (en) * | 2018-05-16 | 2021-12-29 | Henkel AG & Co. KGaA | Curable adhesive composition for die attach |
US11373921B2 (en) | 2019-04-23 | 2022-06-28 | Honeywell International Inc. | Gel-type thermal interface material with low pre-curing viscosity and elastic properties post-curing |
JP7358883B2 (ja) | 2019-09-26 | 2023-10-11 | 日本ゼオン株式会社 | 熱伝導シート |
CN115516060A (zh) * | 2019-11-19 | 2022-12-23 | 汉高股份有限及两合公司 | 热界面材料及其应用方法 |
CN111534732B (zh) * | 2019-12-26 | 2021-05-11 | 有研工程技术研究院有限公司 | 一种电子封装热界面用In基合金及其制备方法 |
US20220363953A1 (en) * | 2020-06-05 | 2022-11-17 | Dexerials Corporation | Method for manufacturing smart card, smart card, and conductive particle-containing hot-melt adhesive sheet |
CN111925745B (zh) * | 2020-08-18 | 2021-08-17 | 湖南创瑾科技有限公司 | 一种导电胶及其制备方法与应用 |
JP7510817B2 (ja) | 2020-08-25 | 2024-07-04 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
US12004324B2 (en) | 2022-06-21 | 2024-06-04 | Deeia Inc. | Metallic thermal interface materials and associated devices, systems, and methods |
KR102630098B1 (ko) | 2020-11-11 | 2024-01-29 | 주식회사 제이앤씨머트리얼즈 | 고온에서 안정한 실리콘계 열매개물질 조성물 및 그 제조방법 |
KR102559169B1 (ko) | 2020-11-11 | 2023-07-25 | 주식회사 에이치앤에스 | 흡습에 의한 경시변화를 개선한 실리콘계 열매개물질 조성물 및 그 제조방법 |
CN113831736A (zh) * | 2021-09-27 | 2021-12-24 | 中国科学院宁波材料技术与工程研究所 | 一种多稳态可变刚度的智能材料及其制备方法与应用 |
Family Cites Families (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4147669A (en) * | 1977-03-28 | 1979-04-03 | Rockwell International Corporation | Conductive adhesive for providing electrical and thermal conductivity |
US4087585A (en) * | 1977-05-23 | 1978-05-02 | Dow Corning Corporation | Self-adhering silicone compositions and preparations thereof |
US4323914A (en) * | 1979-02-01 | 1982-04-06 | International Business Machines Corporation | Heat transfer structure for integrated circuit package |
US4607277A (en) * | 1982-03-16 | 1986-08-19 | International Business Machines Corporation | Semiconductor assembly employing noneutectic alloy for heat dissipation |
US4482763A (en) | 1982-07-19 | 1984-11-13 | Exxon Research & Engineering Co. | Process for hydroxylating olefins in the presence of an osmium containing catalyst and organic halogenated hydrocarbon co-catalyst |
US4557857A (en) * | 1984-05-30 | 1985-12-10 | Allied Corporation | High conducting polymer-metal alloy blends |
US4766176A (en) * | 1987-07-20 | 1988-08-23 | Dow Corning Corporation | Storage stable heat curable organosiloxane compositions containing microencapsulated platinum-containing catalysts |
JPH0214244A (ja) * | 1988-06-30 | 1990-01-18 | Toray Dow Corning Silicone Co Ltd | 加熱硬化性オルガノポリシロキサン組成物 |
US4915167A (en) * | 1988-08-05 | 1990-04-10 | Westinghouse Electric Corp. | Thermal coupling to enhance heat transfer |
US5198189A (en) * | 1989-08-03 | 1993-03-30 | International Business Machines Corporation | Liquid metal matrix thermal paste |
US5235741A (en) * | 1989-08-18 | 1993-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Electrical connection and method for making the same |
US5056706A (en) * | 1989-11-20 | 1991-10-15 | Microelectronics And Computer Technology Corporation | Liquid metal paste for thermal and electrical connections |
US5853622A (en) * | 1990-02-09 | 1998-12-29 | Ormet Corporation | Transient liquid phase sintering conductive adhesives |
US5376403A (en) * | 1990-02-09 | 1994-12-27 | Capote; Miguel A. | Electrically conductive compositions and methods for the preparation and use thereof |
US5062896A (en) * | 1990-03-30 | 1991-11-05 | International Business Machines Corporation | Solder/polymer composite paste and method |
US5097387A (en) * | 1990-06-27 | 1992-03-17 | Digital Equipment Corporation | Circuit chip package employing low melting point solder for heat transfer |
US5136365A (en) * | 1990-09-27 | 1992-08-04 | Motorola, Inc. | Anisotropic conductive adhesive and encapsulant material |
JP3029680B2 (ja) * | 1991-01-29 | 2000-04-04 | 東レ・ダウコーニング・シリコーン株式会社 | オルガノペンタシロキサンおよびその製造方法 |
WO1992022090A1 (en) | 1991-06-03 | 1992-12-10 | Motorola, Inc. | Thermally conductive electronic assembly |
US5170930A (en) * | 1991-11-14 | 1992-12-15 | Microelectronics And Computer Technology Corporation | Liquid metal paste for thermal and electrical connections |
US5286417A (en) * | 1991-12-06 | 1994-02-15 | International Business Machines Corporation | Method and composition for making mechanical and electrical contact |
JP3424958B2 (ja) * | 1993-01-26 | 2003-07-07 | 住友電気工業株式会社 | シールドフラットケーブル及びその製造方法 |
US5445308A (en) * | 1993-03-29 | 1995-08-29 | Nelson; Richard D. | Thermally conductive connection with matrix material and randomly dispersed filler containing liquid metal |
US5328087A (en) * | 1993-03-29 | 1994-07-12 | Microelectronics And Computer Technology Corporation | Thermally and electrically conductive adhesive material and method of bonding with same |
US5323294A (en) * | 1993-03-31 | 1994-06-21 | Unisys Corporation | Liquid metal heat conducting member and integrated circuit package incorporating same |
JPH07207160A (ja) | 1994-01-11 | 1995-08-08 | Toshiba Silicone Co Ltd | シリコーン組成物およびその製造方法 |
US5463190A (en) * | 1994-04-04 | 1995-10-31 | Motorola, Inc. | Electrically conductive adhesive |
US5958590A (en) * | 1995-03-31 | 1999-09-28 | International Business Machines Corporation | Dendritic powder materials for high conductivity paste applications |
US5572404A (en) * | 1995-09-21 | 1996-11-05 | Unisys Corporation | Heat transfer module incorporating liquid metal squeezed from a compliant body |
US5561590A (en) * | 1995-09-21 | 1996-10-01 | Unisys Corporation | Heat transfer sub-assembly incorporating liquid metal surrounded by a seal ring |
US5808874A (en) * | 1996-05-02 | 1998-09-15 | Tessera, Inc. | Microelectronic connections with liquid conductive elements |
DE69710089T2 (de) * | 1996-08-16 | 2002-08-22 | Hugh P. Craig | Druckfähige zusammensetzungen und deren auftragung auf dielektrische oberflächen für die herstellung von gedruckten leiterplatten |
DE19639938C2 (de) * | 1996-09-27 | 2001-06-13 | Siemens Ag | Hybridintegrierte Schaltung mit einem geklebten Kühlkörper |
JP3810505B2 (ja) * | 1997-02-28 | 2006-08-16 | 独立行政法人科学技術振興機構 | 導電性プラスチック、それによる導電回路及びその導電回路の形成方法 |
US6059952A (en) * | 1997-07-10 | 2000-05-09 | International Business Machines Corporation | Method of fabricating coated powder materials and their use for high conductivity paste applications |
DE69902957T2 (de) | 1998-03-10 | 2003-09-11 | Togo Seisakusyo Corp., Aichi | Leitfähige Harzzusammensetzung |
JP3444199B2 (ja) * | 1998-06-17 | 2003-09-08 | 信越化学工業株式会社 | 熱伝導性シリコーンゴム組成物及びその製造方法 |
US6706219B2 (en) * | 1999-09-17 | 2004-03-16 | Honeywell International Inc. | Interface materials and methods of production and use thereof |
US7200815B2 (en) | 2000-03-17 | 2007-04-03 | Schlucktronix Llc | Methods and devices for reconstructing visual stimuli observed through browser-based interfaces over time |
JP2001300275A (ja) * | 2000-04-20 | 2001-10-30 | Asahi Kasei Corp | ポリオレフィン中空糸状多孔膜 |
US6392890B1 (en) * | 2000-12-20 | 2002-05-21 | Nortel Networks Limited | Method and device for heat dissipation in an electronics system |
JP2002329989A (ja) | 2001-05-02 | 2002-11-15 | Shin Etsu Chem Co Ltd | 熱軟化性放熱シート |
US6815486B2 (en) * | 2002-04-12 | 2004-11-09 | Dow Corning Corporation | Thermally conductive phase change materials and methods for their preparation and use |
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- 2003-04-08 WO PCT/US2003/010744 patent/WO2004001844A2/en active Application Filing
- 2003-04-08 AU AU2003221683A patent/AU2003221683A1/en not_active Abandoned
- 2003-04-08 KR KR1020047021068A patent/KR101011940B1/ko active IP Right Grant
- 2003-04-18 TW TW092109066A patent/TWI265180B/zh not_active IP Right Cessation
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WO2004001844A2 (en) | 2003-12-31 |
US6791839B2 (en) | 2004-09-14 |
JP4532267B2 (ja) | 2010-08-25 |
WO2004001844A3 (en) | 2004-05-27 |
KR101011940B1 (ko) | 2011-02-08 |
JP2005530887A (ja) | 2005-10-13 |
TW200400229A (en) | 2004-01-01 |
AU2003221683A1 (en) | 2004-01-06 |
KR20050024384A (ko) | 2005-03-10 |
EP1579501A2 (en) | 2005-09-28 |
US20030234074A1 (en) | 2003-12-25 |
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