TWI264131B - Nucleation layer for improved light extraction from light emitting device - Google Patents
Nucleation layer for improved light extraction from light emitting deviceInfo
- Publication number
- TWI264131B TWI264131B TW091133123A TW91133123A TWI264131B TW I264131 B TWI264131 B TW I264131B TW 091133123 A TW091133123 A TW 091133123A TW 91133123 A TW91133123 A TW 91133123A TW I264131 B TWI264131 B TW I264131B
- Authority
- TW
- Taiwan
- Prior art keywords
- nucleation layer
- emitting device
- light emitting
- substrate
- light extraction
- Prior art date
Links
- 230000006911 nucleation Effects 0.000 title abstract 8
- 238000010899 nucleation Methods 0.000 title abstract 8
- 238000000605 extraction Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 3
- 229910002704 AlGaN Inorganic materials 0.000 abstract 1
- 229910052984 zinc sulfide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/993,862 US6683327B2 (en) | 2001-11-13 | 2001-11-13 | Nucleation layer for improved light extraction from light emitting devices |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200304232A TW200304232A (en) | 2003-09-16 |
TWI264131B true TWI264131B (en) | 2006-10-11 |
Family
ID=25540011
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW091133123A TWI264131B (en) | 2001-11-13 | 2002-11-12 | Nucleation layer for improved light extraction from light emitting device |
Country Status (4)
Country | Link |
---|---|
US (1) | US6683327B2 (zh) |
JP (1) | JP4714401B2 (zh) |
DE (1) | DE10253083A1 (zh) |
TW (1) | TWI264131B (zh) |
Families Citing this family (33)
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US6900067B2 (en) * | 2002-12-11 | 2005-05-31 | Lumileds Lighting U.S., Llc | Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers |
US6943381B2 (en) * | 2004-01-30 | 2005-09-13 | Lumileds Lighting U.S., Llc | III-nitride light-emitting devices with improved high-current efficiency |
JP2005340765A (ja) * | 2004-04-30 | 2005-12-08 | Sumitomo Electric Ind Ltd | 半導体発光素子 |
JP4513446B2 (ja) * | 2004-07-23 | 2010-07-28 | 豊田合成株式会社 | 半導体結晶の結晶成長方法 |
FI118196B (fi) * | 2005-07-01 | 2007-08-15 | Optogan Oy | Puolijohderakenne ja puolijohderakenteen valmistusmenetelmä |
JP4140606B2 (ja) | 2005-01-11 | 2008-08-27 | ソニー株式会社 | GaN系半導体発光素子の製造方法 |
US20060160345A1 (en) * | 2005-01-14 | 2006-07-20 | Xing-Quan Liu | Innovative growth method to achieve high quality III-nitride layers for wide band gap optoelectronic and electronic devices |
US7221000B2 (en) * | 2005-02-18 | 2007-05-22 | Philips Lumileds Lighting Company, Llc | Reverse polarization light emitting region for a semiconductor light emitting device |
KR20070116121A (ko) * | 2005-03-22 | 2007-12-06 | 스미또모 가가꾸 가부시키가이샤 | 자립 기판, 그 제조 방법 및 반도체 발광 소자 |
JP2007048869A (ja) | 2005-08-09 | 2007-02-22 | Sony Corp | GaN系半導体発光素子の製造方法 |
JP2009530798A (ja) | 2006-01-05 | 2009-08-27 | イルミテックス, インコーポレイテッド | Ledから光を導くための独立した光学デバイス |
KR100756841B1 (ko) * | 2006-03-13 | 2007-09-07 | 서울옵토디바이스주식회사 | AlxGa1-xN 버퍼층을 갖는 발광 다이오드 및 이의제조 방법 |
US20090275266A1 (en) * | 2006-10-02 | 2009-11-05 | Illumitex, Inc. | Optical device polishing |
US8087960B2 (en) * | 2006-10-02 | 2012-01-03 | Illumitex, Inc. | LED system and method |
US20090039356A1 (en) * | 2007-08-08 | 2009-02-12 | The Regents Of The University Of California | Planar nonpolar m-plane group iii-nitride films grown on miscut substrates |
JP5353113B2 (ja) * | 2008-01-29 | 2013-11-27 | 豊田合成株式会社 | Iii族窒化物系化合物半導体の製造方法 |
WO2009097611A1 (en) * | 2008-02-01 | 2009-08-06 | The Regents Of The University Of California | Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut |
JP2011512037A (ja) * | 2008-02-08 | 2011-04-14 | イルミテックス, インコーポレイテッド | エミッタ層成形のためのシステムおよび方法 |
WO2010029775A1 (ja) * | 2008-09-11 | 2010-03-18 | 住友電気工業株式会社 | 窒化物系半導体光素子、窒化物系半導体光素子のためのエピタキシャルウエハ、及び半導体発光素子を製造する方法 |
TW201034256A (en) * | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
WO2010141943A1 (en) * | 2009-06-05 | 2010-12-09 | The Regents Of The University Of California | LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES |
JP4450112B2 (ja) * | 2009-06-29 | 2010-04-14 | 住友電気工業株式会社 | 窒化物系半導体光素子 |
JP2011023534A (ja) | 2009-07-15 | 2011-02-03 | Sumitomo Electric Ind Ltd | 窒化物系半導体発光素子 |
US8449128B2 (en) * | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
JP5972798B2 (ja) * | 2010-03-04 | 2016-08-17 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | C方向において+/−15度より少ないミスカットを有するm面基板上の半極性iii族窒化物光電子デバイス |
US20120309172A1 (en) * | 2011-05-31 | 2012-12-06 | Epowersoft, Inc. | Epitaxial Lift-Off and Wafer Reuse |
JP6005346B2 (ja) * | 2011-08-12 | 2016-10-12 | シャープ株式会社 | 窒化物半導体発光素子およびその製造方法 |
US9209358B2 (en) * | 2011-12-14 | 2015-12-08 | Seoul Viosys Co., Ltd. | Semiconductor device and method of fabricating the same |
JP5948698B2 (ja) * | 2012-04-13 | 2016-07-06 | パナソニックIpマネジメント株式会社 | 紫外発光素子およびその製造方法 |
CN104393125B (zh) * | 2014-12-17 | 2017-05-10 | 安徽三安光电有限公司 | 一种发光元件的制备方法 |
US9401583B1 (en) * | 2015-03-30 | 2016-07-26 | International Business Machines Corporation | Laser structure on silicon using aspect ratio trapping growth |
CN109427932B (zh) * | 2017-08-23 | 2021-07-16 | 比亚迪半导体股份有限公司 | 发光二极管外延片及其制造方法 |
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US5393993A (en) | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
US5661074A (en) | 1995-02-03 | 1997-08-26 | Advanced Technology Materials, Inc. | High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same |
US5585648A (en) | 1995-02-03 | 1996-12-17 | Tischler; Michael A. | High brightness electroluminescent device, emitting in the green to ultraviolet spectrum, and method of making the same |
US5903017A (en) * | 1996-02-26 | 1999-05-11 | Kabushiki Kaisha Toshiba | Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN |
JP3448450B2 (ja) * | 1996-04-26 | 2003-09-22 | 三洋電機株式会社 | 発光素子およびその製造方法 |
JPH1027947A (ja) | 1996-07-12 | 1998-01-27 | Matsushita Electric Ind Co Ltd | 半導体レーザ |
JPH111399A (ja) * | 1996-12-05 | 1999-01-06 | Lg Electron Inc | 窒化ガリウム半導体単結晶基板の製造方法並びにその基板を用いた窒化ガリウムダイオード |
JPH10270368A (ja) | 1997-03-26 | 1998-10-09 | Rikagaku Kenkyusho | SiCハイブリッド基板及びその製造方法 |
JP3957359B2 (ja) * | 1997-05-21 | 2007-08-15 | シャープ株式会社 | 窒化ガリウム系化合物半導体発光素子及びその製造方法 |
JP3822318B2 (ja) | 1997-07-17 | 2006-09-20 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
ATE279789T1 (de) | 1997-08-29 | 2004-10-15 | Cree Inc | Robuste lichtemittierende diode aus einer nitridverbindung von elementen der gruppe iii für hohe zuverlässigkeit in standardpackungen |
JPH1197803A (ja) * | 1997-09-25 | 1999-04-09 | Fujitsu Ltd | 半導体発光装置 |
JP3955367B2 (ja) * | 1997-09-30 | 2007-08-08 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | 光半導体素子およびその製造方法 |
GB2332563A (en) * | 1997-12-18 | 1999-06-23 | Sharp Kk | Growth of group III nitride or group III-V nitride layers |
JP4166885B2 (ja) | 1998-05-18 | 2008-10-15 | 富士通株式会社 | 光半導体装置およびその製造方法 |
JP2000068498A (ja) | 1998-08-21 | 2000-03-03 | Nippon Telegr & Teleph Corp <Ntt> | 絶縁性窒化物膜およびそれを用いた半導体装置 |
US6690700B2 (en) * | 1998-10-16 | 2004-02-10 | Agilent Technologies, Inc. | Nitride semiconductor device |
JP2000196143A (ja) | 1998-12-25 | 2000-07-14 | Sharp Corp | 半導体発光素子 |
-
2001
- 2001-11-13 US US09/993,862 patent/US6683327B2/en not_active Expired - Lifetime
-
2002
- 2002-11-12 TW TW091133123A patent/TWI264131B/zh not_active IP Right Cessation
- 2002-11-13 JP JP2002329081A patent/JP4714401B2/ja not_active Expired - Lifetime
- 2002-11-13 DE DE10253083A patent/DE10253083A1/de not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
US20030089917A1 (en) | 2003-05-15 |
US6683327B2 (en) | 2004-01-27 |
TW200304232A (en) | 2003-09-16 |
DE10253083A1 (de) | 2003-05-28 |
JP2003158294A (ja) | 2003-05-30 |
JP4714401B2 (ja) | 2011-06-29 |
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Legal Events
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MK4A | Expiration of patent term of an invention patent |