TWI261871B

TWI261871B - Apparatus and method for thin film deposition

Info

Publication number: TWI261871B
Application number: TW90128183A
Authority: TW
Inventors: Chang-Soo Park; Sang-Gee Park; Jung-Hwan Choi; Bo-Shin Chung; Sang-Young Oh
Original assignee: Jusung Eng Co Ltd
Priority date: 2001-11-13
Filing date: 2001-11-13
Publication date: 2006-09-11

Abstract

The apparatus for forming a thin film includes a reaction chamber having a top portion, a sidewall portion and a bottom portion; a gas injector penetrating the top portion and letting a source element pass therethrough; a distributor connected to the gas injector, wherein a plurality of injection holes are formed in the distributor and the source element is injected through the plurality of injection holes; and a substrate heating member positioned in a reaction space defined by the top, bottom and sidewall portions of the reaction chamber, and arranged below the distributor.

Description

1261871 ............... 五 '發明說明（J) 發明背！ 1 ·發明之領域本發明係與丰道膜沈積用之設備與-裝置製造設備有關，特別是關於薄 2 ·相關技術之描述去半導體跋置，/ 元件，通常是由s列如記憶體IC (積體電路）及其它邏輯同條件下製# i、胃覆沈積及圖案轉移製程所製造。當在相同特性ϋΐΓ震置，為了使所有半導體裝置具有相來半導體裝置需I t厚度均句性應小於5%。然而，由於近之厚度均勻间整合度及精密之積體電路，因此薄膜通常？以小於5%以改善半導體裝置之可靠度。體之引入器，藉設：使用喷灑頭當作反應氣體。孔板通常使：孔板以均句散佈化學來源氣每-氣體散佈孔分成兩個：八政佈孔上佈化學來源氣體，徑，第二個部分具有較弟；個部分具有較大直複數個氣體散佈孔廣泛地散：在丄：室：學來源氣體經由然而’當化學來源氣I#丑々说氣體累積且殘留在氣體散：;:至終化學來源滿。此外，由於所散佈之化源===孔填及少量之反應物，這些也合g接/ f1㈢傅V反應副產品内，因此副產品及反應物在薄放佈孔凡田雜貝，因而使得第6頁 1261871 五、發明說明（2) 沈積在基板上之薄膜均勻性及组成吳化 ” ’由=頭鄰接供應熱：基板之加熱二將噴麗頭加熱而且化學來源氣體也會 =…到不利地影響。為了克服這個㈣：喷灑頭内採用冷卻系統。麸而在的配置更加麻煩。同樣地二=冷卻系統會使喷灑頭有不同的構造與配置1此：：：;麗=據其製造廠商而 =丄！刖=研究與發展出使用注射裝置當作反應氣 ^益，例如，如同美國專利第5987427號所揭示。知二所Λ為二示，剖面圖，說明薄膜沈積設備依據習反庳室ι’ο其f 4 ί置。如圖1所示’薄膜沈積設備包括 /出口4 ^\ 2〇、氣體注射裝置3〇及基板入口。同樣地，反應室1〇可以分成三個部分_側壁部分二;=Γ2二頂端部分U。在此同時，反應室10之底口，將反應室1(3内之空氣排出。基板加 :=配5於；應室10之中央位置且由固定在反應室10 tii w 所支撐。薄膜沈積之基板或石夕晶圓沈積製程期間放置於基板加熱構件20上，基包括—加熱器’供應熱至基板切晶圓。基口 40位於反應室1 0之側壁部分11，因此藉由基 ίο取出 4〇將基板或石夕晶圓放進反應室10或從反應室加埶Lif人化學來源氣體之氣體注射裝置3G配置於基板依：所接0周f。雖然圖1只有顯示一氣體注射裝置30， ;楗供化學來源氣體種類或注射那些種類的化學來源1261871 ............... Five 'Invention Description (J) Invention back! 1 FIELD OF THE INVENTION The present invention relates to equipment and apparatus manufacturing equipment for Feng Dao film deposition, and more particularly to thin 2 · related art descriptions for semiconductor devices, / components, usually by s column such as memory IC (Integrated circuit) and other logic manufactured under the same conditions as the #i, gastric deposition and pattern transfer process. When the same characteristics are set, in order to make all the semiconductor devices have the same semiconductor device, the thickness of the thickness should be less than 5%. However, due to the close integration of the thickness and the precision of the integrated circuit, the film is usually? Less than 5% to improve the reliability of the semiconductor device. The introducer of the body, by means of: using the sprinkler head as the reaction gas. The orifice plate usually makes the orifice plate divided into two parts: the chemical source gas per gas dispersion hole is divided into two: the chemical source gas of the eight political cloth holes, the diameter, the second part has a younger brother; the part has a larger straight and plural number The gas distribution holes are widely dispersed: in the 丄: chamber: the source gas is passed through, however, when the chemical source gas I# ugly said that the gas accumulates and remains in the gas dispersion:;: until the final chemical source is full. In addition, due to the scattered chemical source === pore filling and a small amount of reactants, these are also in the g / f1 (three) Fu V reaction by-products, so the by-products and reactants in the thin cloth hole Fan Tian miscellaneous, thus making page 6 1261871 V. INSTRUCTIONS (2) Uniformity and composition of the film deposited on the substrate "When the head is adjacent to the supply of heat: the heating of the substrate will heat the spray head and the chemical source gas will also ... adversely affect In order to overcome this (4): The cooling system is used in the sprinkler head. The configuration of the bran is more troublesome. Similarly, the cooling system will make the sprinkler head have different configurations and configurations. 1:::; Manufacturers = 丄! 刖 = research and development using injection devices as a reaction gas, for example, as disclosed in U.S. Patent No. 5,987, 427. The chamber ι'ο f 4 ί. As shown in Figure 1, 'thin film deposition equipment includes / exit 4 ^ \ 2 〇, gas injection device 3 〇 and substrate inlet. Similarly, the reaction chamber 1 〇 can be divided into three parts _ sidewall part two; = 2 two top part U. At the same time, the bottom of the reaction chamber 10, the reaction chamber 1 (3 inside the air is discharged. The substrate is added: = with 5 in; should be the central position of the chamber 10 and by the fixed chamber 10 tii Supported by w. The thin film deposited substrate or the shi shi wafer deposition process is placed on the substrate heating member 20, and the base includes a heater 'heat supply to the substrate dicing wafer. The base 40 is located at the sidewall portion 11 of the reaction chamber 10 Therefore, the substrate or the shixi wafer is placed in the reaction chamber 10 by the removal of the substrate, or the gas injection device 3G is used to add the Lif human chemical source gas from the reaction chamber. 1 only shows a gas injection device 30; 楗 chemical source gas species or chemical sources of those types

五、發明說明（3) ^ ^。複數個乳體注射裝置3()可以圍繞在基板加熱構件部分1另2: Γ雍’4η體注射裝置30穿透反應室10之底端山 /口者心至〇之侧壁部分1 1延伸。反應室1 〇之頂端部分13為圓頂形。由於$ μ μ 、部分1 3，κι + w ；虱體注射裝置30朝向圓頂形頂端反應室ίο之ft，=主射裝置30所注射之化學來源氣體自 # ^岑丁、鳊郤刀3返回，或沿著圓頂形頂端部分1 3之 .其予來源亂體便會擴散至反應室1 〇内而 ^基板或石夕晶圓上形成薄膜。在如m所示備，化學來源氣體是難以受到安、積〇加熱器的影響。又到女衣於基板加熱構件2。内之 Λ献^^備巾’氣體注射裝置3G可為複數㈣繞於基板 2構：20，而基板加熱構件2。可向上及向下調整以獲得句勻之:專膜及組成。然巾’在沈積薄膜中仍有些許問題。亦即，沈積薄膜之厚度在靠近氣體注射裝置3〇之周圍部分與基板中心之中央部分並不相同。另外在上述設備中，為 =勾擴散注，及返回之化學來源氣體並在基板上形成均勻溥膜’反應室1 0需要足夠的空間。因此，反應室應一士容量之體積且真空幫浦也會操作一段很長的時間使反應至1 0之反應空間真空Α。另外，需要以形成薄膜，因而導致生產成本增加。原孔體在此期間，當沈積薄膜使用習知化學氣相沈積（CVD )時，要得到雜質密度在允許範圍内之薄膜是不可能的，而且要使薄膜厚度小於幾個奈米也是不可能 1261871V. Description of invention (3) ^ ^. A plurality of breast injection devices 3 () can be extended around the substrate heating member portion 1 2: Γ雍 '4η body injection device 30 penetrates the bottom end of the reaction chamber 10 from the mountain / mouth to the side wall portion 1 1 of the crucible . The top end portion 13 of the reaction chamber 1 is dome-shaped. Since the μ μ μ , part 1 3 , κι + w ; the corpus callosum injection device 30 faces the dome-shaped top reaction chamber ίο, = the chemical source gas injected by the main injection device 30 from # 岑丁,鳊刀刀3 Returning, or along the dome-shaped tip portion 13, the source will diffuse into the reaction chamber 1 and form a thin film on the substrate or the stone wafer. As indicated by m, the chemical source gas is hardly affected by the heaters. Further, the female clothing is applied to the substrate heating member 2. The gas injection device 3G may be a plurality (four) wound around the substrate 2: 20, and the substrate heating member 2. It can be adjusted up and down to get the sentence uniform: film and composition. However, there are still some problems in the deposited film. That is, the thickness of the deposited film is not the same as the central portion of the center of the substrate near the vicinity of the gas injection device 3A. Further, in the above apparatus, it is necessary to have a sufficient space for the diffusion of the check mark and the return of the chemical source gas and the formation of the uniform ruthenium membrane reaction chamber 10 on the substrate. Therefore, the reaction chamber should be one volume of the volume and the vacuum pump will operate for a long period of time to allow the reaction space to react to zero. In addition, it is necessary to form a film, thus resulting in an increase in production cost. In the meantime, when the deposited film is a conventional chemical vapor deposition (CVD), it is impossible to obtain a film having an impurity density within an allowable range, and it is impossible to make the film thickness less than several nanometers. 1261871

五、發明說明（4) 研究與引進解決這些問題所需之新科技。例如，美國專利第40 5843 0號揭示習知使用磊晶於單晶上之原子層沈積 (ALD )方法。根據ALD方法，在不同時間分別引進兩個來源成分至反應室，因而形成薄膜。換句話說，第一來源成为疋首先引進至反應室並在基板上形成單原子層。之後，在沈積反應後藉由真空幫浦或使用惰性氣體從反應室内去除殘留物質。下一步，將第二來源成分引進反應室與第/ 來源成分反應5在基板上產生薄膜。近幾年來，已廣泛地研究與發展將A L D方法應用於設備及形成薄膜半導體裝置之方法。 ^ 上述ALD方法可使用在具有喷灑頭之設備與具有氣體注射裝置之設備。美國專利第60 1 5 590號揭示另一種使用 ALD方法之設備。根據美國專利第6 〇丨5 5 9 0號所揭示之設備’流入導^疋位於基板下方，使用ALD方法形成薄膜於基板上，流出導管也位於基板下方與流入導管相反。因此，來源反應物幾乎不會擴散至整個反應室。更特別的是，來源反應物之密度較流入導管高而非流出導管。由於基板上方之密度並不相同，導致鄰近流入導管之_部分基板具有較鄰近流出導管之另一部分基板厚之薄膜，因而造成薄膜厚度之不均勻性。為了克服此問題，需要淨化反應室一段充足的時間以將殘留成分從反應室内排除。因此，需要一段很長的時間來形成厚度均句的薄膜，假如反應室沒有淨化的話’即使要得到薄膜也很困難。V. INSTRUCTIONS (4) Research and introduce new technologies needed to solve these problems. For example, U.S. Patent No. 4,048,843 discloses the use of atomic layer deposition (ALD) methods for epitaxy on single crystals. According to the ALD method, two source components are separately introduced into the reaction chamber at different times, thereby forming a film. In other words, the first source is first introduced into the reaction chamber and a monoatomic layer is formed on the substrate. Thereafter, residual matter is removed from the reaction chamber by a vacuum pump or using an inert gas after the deposition reaction. Next, a second source component is introduced into the reaction chamber to react with the / source component to produce a film on the substrate. In recent years, methods for applying the A L D method to devices and forming thin film semiconductor devices have been extensively studied and developed. ^ The above ALD method can be used in equipment having a sprinkler head and equipment having a gas injection device. Another apparatus using the ALD method is disclosed in U.S. Patent No. 6,015,590. According to the apparatus disclosed in U.S. Patent No. 6,5,900, the inflow guide is located below the substrate, and a film is formed on the substrate by an ALD method, and the outflow conduit is also located below the substrate opposite to the inflow conduit. Therefore, the source reactant hardly spreads throughout the reaction chamber. More specifically, the source reactants are denser than the inflow conduits rather than the outflow conduits. Since the density above the substrate is not the same, the portion of the substrate adjacent to the inflow conduit has a film thicker than the other portion of the substrate adjacent the outflow conduit, resulting in non-uniformity in film thickness. In order to overcome this problem, it is necessary to purify the reaction chamber for a sufficient period of time to remove residual components from the reaction chamber. Therefore, it takes a long time to form a film of a uniform thickness, and it is difficult to obtain a film even if the reaction chamber is not cleaned.

第9頁 1261871 五、發明說明（5) 一 *~— 發明之概沭因此’本發明針對薄膜沈積用之設備與方法，與二相關技術之限制及缺點所衍生之一個或—個以上：；克本發明之目的為設置薄膜沈積用之設備呈均勻厚度及成分。、力决，具有法。本發明之其它目的為設置形成超薄薄膜之設備與方本赉明之其它特色與優點將會在下中有一部分從本說明中將％而I g & f平扣出，其 t 特別是在文中說明及專利申％論θ π # 點。了只覌及獲得本發明之目的及其它優為了達成上述目標，形成薄膜之設備邛为、侧壁部分及底端部分之一々括具有頂端穿透頂端部分並讓來源.八 ^ :氣體注射裝置，散佈裝置，其中在散佈I二$ = ^ 7連接氣體注射裝置之數個注射孔注射來源成‘二I複數個庄射孔，、經由複應室頂端、底端部分及側壁部熱構件’位於由反於散佈裝置下方。刀斤疋義之反應空間，安置形成薄膜之設備另外包括大分以支撐基板加熱構件。力固疋於反應室底端部在上述設備中，散佈嚴 ^ 一 ”安置複數個注射孔44Page 9 1261871 V. Description of the invention (5) A summary of the invention. Therefore, the present invention is directed to one or more of the apparatus and methods for film deposition, and the limitations and disadvantages of the related art: The purpose of the invention is to provide a uniform thickness and composition of the apparatus for film deposition. Responsible, have a law. Other objects and advantages of the present invention are to provide an apparatus for forming an ultrathin film and other features and advantages of the present invention. A part of the following will be taken from the description and the Ig & f, especially t in the text. Description and patent application % on θ π # points. Having only achieved the object of the present invention and other advantages in order to achieve the above object, the device for forming a film, one of the side wall portion and the bottom end portion, includes a top end penetrating the top portion and allowing the source. , a dispersing device in which a plurality of injection holes of the gas injection device are interspersed into the injection source into a 'two I plurality of Zhuang perforations, through the top of the complex chamber, the bottom end portion and the side wall portion of the thermal member' Located below the scattering device. The reaction space for arranging the film and the film forming device additionally includes a large portion to support the substrate heating member. The force is fixed at the bottom end of the reaction chamber. In the above apparatus, a plurality of injection holes 44 are disposed.

似截斷圓錐體形狀之第二^匕括圓柱形之第一部分 1261871 ^^7 —--———〆又置之第二部分侧面。大直徑的部分及使來、庵：、射包括可接受來源成分此，大直心成分速度增加之小直徑的部分。在加熱構件位於反:小直徑的部分大。此外，” 頂端部分中央。心二s中央，軋體注射裝置安置於反應炱八士上述设備可再包括複數個散佈裝置，分成位於頂端卻 :第央ΐ::ί佈裝置及位於頂端部分第-散佈裝置周園弟一政佈衣置，注射來源成分，包括主要反應成分及次要反，成分。在此，主要反應成分通過安置於^端部分中央之第一散佈裝置，次要反應成分通過安置於第〆散佈裝置周圍之第二散佈裝置。再者，當第一及第二散佈裝置安置於反應室頂端部分時，第二散佈裝置之一軸與第一散佈裝置之一軸形成約90度或小於90度之夾角。從一群由氨 (Ν Η3 )、聯氨（Ν2 Η4 )、水蒸汽（Η2 0 )、氧氣（〇2 )及臭氧（03 )所組成的氣體挑選次要反應成分。在本發明中，注射孔之數量及尺寸隨著反應室之反應空間而改變。反應室之頂端部分為圓頂形，基板加熱構件包括一體之加熱元件及電源供應器。為了達成這些及其它優點，根據本發明之目的，不論是具體說明或概括說明，在具有反應室之沈積設備内形成薄膜之方法中，其中反應室具有反應空間，基板加熱構件安置於反應空間内，氣體注射裝置安置於反應室頂端部分而散佈裝置連接氣體注射裝置，此方法包括下列步驟：經由氣體注射裝置注射化學來源氣體，經由具有複數個注射The second part of the shape of the truncated cone is the first part of the cylindrical shape. 1261871 ^^7 —---——〆 The second part of the side is placed. The large-diameter portion and the incoming, the 庵:, and the shot include an acceptable source component. This is a small-diameter portion in which the velocity of the large straight-line component is increased. The heating member is located at the reverse: the small diameter portion is large. In addition, the center of the top part. The center of the heart is s, the rolling body injection device is placed in the reaction. The above equipment can further include a plurality of distributing devices, which are divided into the top but: the first:: ί cloth device and the top part The first-dispersion device, Zhou Yuandi, is a garment, and the source component is injected, including the main reaction component and the secondary reaction component. Here, the main reaction component passes through the first dispersing device disposed in the center of the end portion, and the secondary reaction component passes. a second dispersing device disposed about the second dispersing device. Further, when the first and second dispersing devices are disposed at the top end portion of the reaction chamber, one of the axes of the second dispersing device forms an axis of about 90 degrees with one of the axes of the first dispersing device or An angle less than 90 degrees. The secondary reaction component is selected from a group of gases consisting of ammonia (Ν Η 3 ), hydrazine (Ν 2 Η 4 ), water vapor (Η 2 0 ), oxygen (〇 2 ), and ozone (03). In the present invention, the number and size of the injection holes vary with the reaction space of the reaction chamber. The top portion of the reaction chamber is dome-shaped, and the substrate heating member includes an integrated heating element and a power supply. In order to achieve these and other advantages, in accordance with the purpose of the present invention, a method of forming a film in a deposition apparatus having a reaction chamber, wherein the reaction chamber has a reaction space, and the substrate heating member is disposed in the reaction space, according to the purpose of the present invention. a gas injection device is disposed at a top end portion of the reaction chamber and a dispersing device is coupled to the gas injection device, the method comprising the steps of: injecting a chemical source gas via the gas injection device, via having a plurality of injections

12618711261871

五、發明說明（7) 孔之散佈裝學來源氣體薄m。在上述似截斷圓錐於散佈裝置源氣體之大經的部分。須了解例與說明且說明。為了更成本說明書原理。置將化學來源氣體注射至反應空間；及反應化，在安置於基板加熱構件上方之基板表面形成方法中，散佈裝置包括圓柱形之第一部分及狀體形狀之第二部分。另外，複數個注射孔安置第二部分侧面。每一注射孔包括可接受化學來直徑的部分及使化學來源氣體速度增加之小直的是先前之一般說明及下列之詳細說明皆是範如同專利申請範圍，將對本發明做更進一步的進一步了解本發明而附上附圖，附圖結合並構的一部分，說明本發明之實施例並解釋其工作【較佳實施例之詳細說明】例。說明本發明之實施例，其中附圖所示為範同或類嫩用相同參考數字於圖例中表示相奘詈f ί Γ明巾’具有複數個注射孔之散佈裝置連接注射學來源氣體因而均勻擴散至反：室= 丄古另外，由於在本發明中使用原子層沈積 (ALD )方法形成薄膜，因此可獲得成分均勻之超薄薄V. Description of the invention (7) Dispersion of the hole The source gas is thin m. In the above section, the cone is cut off to spread the passage of the source gas. You must understand the examples and instructions and explain. In order to more costly the principle. The chemical source gas is injected into the reaction space; and the reaction is formed. In the method of forming the substrate surface disposed above the substrate heating member, the scattering device includes a first portion of the cylindrical shape and a second portion of the shape of the shape. In addition, a plurality of injection holes are disposed on the side of the second portion. Each injection hole includes a portion that accepts a chemical diameter and a small straightness that increases the velocity of the chemical source gas. The foregoing general description and the following detailed description are as in the scope of the patent application, and the present invention will be further understood. BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are incorporated in FIG. Illustrating an embodiment of the present invention, wherein the drawings show the same reference numerals or the same reference numerals in the drawings, and the like Diffusion to the reverse: chamber = 丄古 In addition, since the film is formed by the atomic layer deposition (ALD) method in the present invention, it is possible to obtain an ultrathin thin component.

1261871 五、發明說明（8) 膜。隨後將有詳細之說明。圖2所示為示意剖面圖5根據本發明，說明一具有散佈裝置之薄膜沈積設備。如圖2所示，薄膜沈積設備包括反應室110、基板加熱構件120、氣體注射裴置丨3〇及基板入口 /出口 15 〇。同樣地，反應室11 〇可以分成三個部分-側壁部分1 11、底端部分1 1 2及頂端部分1 1 3。侧壁部分1 1 1、底端部分11 2及頂端部分11 3定義反應室1 1 0内部之反應空間。在此同時，反應室11 0之底端部分11 2包括排氣口，將反應室11 0内之空氣排出。基板加熱構件1 2 〇配置於反應室 11 0之中央反應空間内且由固定在反應室11 〇之底端部分 11 2的夯1 21所支撐。薄膜沈積之基板或矽晶圓（未顯示）在沈積製程期間放置於基板加熱構件1 2 0上，基板加熱構件1 2 0包括一加熱器，供應熱至基板或矽晶圓。基板入口/ 出口 1 50位於反應室11 〇之侧壁部分丨π，因此藉由基板入口 /出口 1 5 0將基板或矽晶圓放進反應室丨丨〇或從反應室n 〇取出。雖然圖2所示只有一基板入口 /出口 15〇，另一基板入口 /出口也可形成在與第一基板入口 /出口相對之側壁部分111，因而分別作為基板之入口或出口。另外在圖2中，注射化學來源氣體之氣體注射裝置} 3 〇放置於頂端部分113之中央。雖然圖丨所示只有一氣體注射裝置130，複數個氣體注射裝置13〇可放置於反應室丨丨〇之頂端部分1 1 3- ’、最好是在頂端部分丨i 3的中央。頂端部分 11 3如圖2所不為圓頂％，但也可為平面形。氣體注射裝置 1 30 f透反應至11 〇之了貝端部分丨丨3，具有複數個注射孔之 !261871 發明說明（9) 散佈裝置1 4 0連接氣體注射裝體至反應室1 1 〇之反應空間。置1 3 0之末端散佈化學來源氣 _在建構如上所述之本發明中，基板加熱構件120包括一體之加熱元件及電源供應器。因此，可增加反應室丨i 〇之反應空間。再者，由於氣體注射裝置13〇穿透並位於頂端部分113之中央，因此相對於習知技術，反應室11〇之反應空間增加。現在，參考圖3A-3B及4說明散佈裝置14〇。圖3A為根據本發明，散饰裝置之侧視圖；圖3B為根據本發明，散裝置之仰視平面圖；及圖4所示為根據本發明，散佈之注射孔剖面圖。 & 參考圖3A及3B，散佈裝置14〇分成第一部分21〇及口P为220。第-部分21 0為圓柱形而第二部分22〇為狀似斷圓錐體形。冑：部分220之頂端面積較其底端部分面積大，因此第二部分220為倒截斷圓錐體形。在第二部分之側面，形成複數個注射孔23 0使得來自氣體注射裝置。 (圖2 )之化學來源氣體經由這些注射孔23〇注射並完全佈至反應室？0之反應空間（圖2)。由於複數個注射孔月 230安置於第二部分22 0之侧面，避免化學來源氣體直接注射至基板。注射孔之數量及其直徑與反應空間之體積― 關。雖然反應空間之體積很大，注射孔之數量及其直徑端視化學來源氣體之種類而減少。另外在本發明中，一部分210之頂端面積實際上為螺拴形，為了將其固定圖^ 之氣體注射裝置130，使用複數個螺線。 01 z1261871 V. Description of invention (8) Membrane. A detailed description will follow. Figure 2 is a schematic cross-sectional view of Figure 5 illustrating a thin film deposition apparatus having a dispersing device in accordance with the present invention. As shown in Fig. 2, the thin film deposition apparatus includes a reaction chamber 110, a substrate heating member 120, a gas injection device 3, and a substrate inlet/outlet 15 . Similarly, the reaction chamber 11 can be divided into three sections - a side wall portion 1 11 , a bottom end portion 1 1 2 and a top end portion 1 1 3 . The side wall portion 1 1 1 , the bottom end portion 11 2 and the top end portion 11 3 define a reaction space inside the reaction chamber 110. At the same time, the bottom end portion 11 2 of the reaction chamber 110 includes an exhaust port for discharging the air in the reaction chamber 110. The substrate heating member 1 2 is disposed in the central reaction space of the reaction chamber 110 and supported by the crucible 1 21 fixed to the bottom end portion 11 2 of the reaction chamber 11 . A thin film deposited substrate or germanium wafer (not shown) is placed on the substrate heating member 120 during the deposition process, and the substrate heating member 120 includes a heater that supplies heat to the substrate or germanium wafer. The substrate inlet/outlet 1 50 is located at the side wall portion π of the reaction chamber 11 ,, so that the substrate or the ruthenium wafer is placed in the reaction chamber 丨丨〇 or taken out from the reaction chamber n 藉 by the substrate inlet/outlet 150. Although only one substrate inlet/outlet 15 is shown in Fig. 2, the other substrate inlet/outlet may be formed in the side wall portion 111 opposite to the first substrate inlet/outlet, thus serving as an inlet or an outlet of the substrate, respectively. Further, in Fig. 2, a gas injection device for injecting a chemical source gas is placed in the center of the tip portion 113. Although only one gas injection device 130 is shown, a plurality of gas injection devices 13 can be placed in the top portion 1 1 3- ' of the reaction chamber, preferably at the center of the top portion 丨i 3 . The tip portion 11 3 is not the dome % as shown in Fig. 2, but may be planar. The gas injection device 1 30 f is permeable to 11 〇 of the shell end portion 丨丨 3, and has a plurality of injection holes! 261871 Description of the invention (9) Dispersing device 1 40 Connecting the gas injection body to the reaction chamber 1 1 Reaction space. Disposing the chemical source gas at the end of the 130. In constructing the invention as described above, the substrate heating member 120 includes an integrated heating element and a power supply. Therefore, the reaction space of the reaction chamber 丨i 〇 can be increased. Further, since the gas injection device 13 is penetrated and located at the center of the tip end portion 113, the reaction space of the reaction chamber 11 is increased relative to the prior art. The dispensing device 14A will now be described with reference to Figures 3A-3B and 4. Figure 3A is a side elevational view of a dispensing device in accordance with the present invention; Figure 3B is a bottom plan view of the dispensing device in accordance with the present invention; and Figure 4 is a cross-sectional view of the dispensing orifice in accordance with the present invention. & Referring to Figures 3A and 3B, the dispensing device 14 is divided into a first portion 21 and a port P of 220. The first portion 21 0 is cylindrical and the second portion 22 is shaped like a broken cone.胄: The top end portion 220 has a larger area than the bottom end portion, so the second portion 220 has an inverted truncated cone shape. On the side of the second portion, a plurality of injection holes 230 are formed so as to come from the gas injection device. The chemical source gas (Fig. 2) is injected through these injection holes 23 and completely discharged to the reaction chamber. 0 reaction space (Figure 2). Since a plurality of injection holes 230 are placed on the side of the second portion 22 0, direct injection of chemical source gas into the substrate is avoided. The number of injection holes and their diameters are related to the volume of the reaction space. Although the volume of the reaction space is large, the number of injection holes and their diameters are reduced depending on the type of chemical source gas. Further, in the present invention, the top end area of a portion 210 is actually a spiral shape, and a plurality of spirals are used in order to fix the gas injection device 130 of the drawing. 01 z

1261871 五、發明說明（ίο)1261871 V. Description of invention (ίο)

圖4所示為根據本發明，散佈裝置H〇之注射孔23〇面圖。在圖4_中’注射孔230分成兩個部分_大直徑部八口J 230a及小直徑部分230b。大直徑部分23〇a接受化學^ 體二來:原氣體通過小直徑部分23〇b。由於大直分230a之直徑較小直徑部分23〇b大，因此在通過注 1 230後，由於Venturi效應化學來源氣體之速度會增加L 此，經由注射孔2 3 0所注射之化學來源氣體。因圖2反應室1 1 0之反應空間。 ^文佈在二述’複數個散佈裝置端視化學來源氣體可安晋於反應至11G之頂端部分。此時，複數個散佈裝置置基板適當地安置於頂端部分113之中央周圍。另J 散佈裝置連接至每一氣體注射裝置。母一來源成分例如形成薄膜之化學要反應成分(亦實於主要反應成分之散佈== 一政佈叙置之—軸（圖3 )與第— / 疋弟 90度或小於90度之夾角。同政佈衣置之—軸形成約時’使用水、氧氣及/或臭氧：在基板上形成氧化薄膜形成氣化物薄膜時，使用氨及/或聯氨做為* 根據本發明，在薄膜沈積設備中，由於散佈u 1261871 五'發明說明（1” 細 ~~ )里 >主射孔且其尺寸較喷灑頭裝置小，因此雜質產物及粒子難以在散佈裝置内產生，因而減少劣質薄膜的產生。、此外，當使用喷灑頭裝置形成薄膜時，需要許多來源成f ’此乃因噴灑頭之尺寸較基板大且所具有的注射孔也車乂政佈裝置多。然而，根據本發明之沈積設備，需要較具有喷〉麗頭裝置之習知設備少的來源成分，此乃因散佈裝置具有較少及尺寸較小之注射孔。再者，根據本發明之沈積設備可採用前述之ALD方法，可獲得最小厚度及成分均句、之薄膜。圖5A所示為氧化鋁（Alz〇3)薄膜之厚度圖，藉由本發月所發明之設備形成氧化鋁（A込％ )薄膜，圖5β所示為氧化鋁j A丨2 〇3 )薄膜之均勻性圖，藉由本發明所發明之設備 =氧化鋁（ai2o3 )薄膜。在測試氧化鋁（Al2〇3 )薄膜之生前，使用三甲基紹（A1(CH3)3)及水蒸汽 (M )做為形成氧化銘⑴2〇3 )薄膜之來源成分。另外’使用A L D方法，分別太尤1 9 Η 2：办s η (Α10 )續赠— 夕晶圓上形成氧化鋁上ΑΙΑ):專Μ。在沈積期間，矽晶圓之溫度在攝氏2⑽ ^由於氧化鋁（αι2ο3 )薄膜之厚度在半 :於10。埃’因此本實驗所形成之氧：體衣置中通/ 度在1〇〇埃的範圍内。溥膜厚圖5Α每一點代表薄膜厚度 25點。如圖5Α所示，薄膜二二f勾值，母一基板量測阁RR所-^ 厗度在〇埃至80埃的範圍内。圖5B所不為形成於基板i至^ 厚度均勻性是由下列公式 .之膜厚度均句性。Fig. 4 is a side elevational view of the injection hole 23 of the dispensing device H〇 in accordance with the present invention. In Fig. 4_, the injection hole 230 is divided into two portions - a large diameter portion eight port J 230a and a small diameter portion 230b. The large diameter portion 23〇a receives the chemical body 2: the raw gas passes through the small diameter portion 23〇b. Since the diameter of the large straight portion 230a is smaller than the diameter portion 23〇b, the chemical source gas injected through the injection hole 203 is increased by the velocity of the chemical source gas due to the Venturi effect after the injection of 1 230. Because of the reaction space of the reaction chamber 1 10 in Figure 2. ^文布in the second of the 'multiple scattering devices, the end of the chemical source gas can be promoted to the top part of the 11G reaction. At this time, a plurality of scattering device substrates are appropriately disposed around the center of the tip end portion 113. Another J dispensing device is connected to each gas injection device. The parent-derived component, for example, forms the chemical reaction component of the film (also the distribution of the main reaction component == a political cloth--the axis (Fig. 3) and the first - / the younger brother 90 degrees or less than 90 degrees. In the case of the formation of a film, the use of water, oxygen and/or ozone: when an oxide film is formed on a substrate to form a vapor film, ammonia and/or hydrazine is used as * according to the present invention, in film deposition In the equipment, due to the dispersion of u 1261871 five 'invention description (1" thin ~ ~) in the main perforation and its size is smaller than the sprinkler device, so the impurity products and particles are difficult to produce in the dispersing device, thus reducing the inferior film In addition, when using a sprinkler head device to form a film, many sources are required to be f' because the size of the sprinkler head is larger than that of the substrate and the injection hole is also more than the ruling device. However, according to the present. The deposition apparatus of the invention requires less source components than conventional equipment having a spray device, because the dispensing device has fewer and smaller injection orifices. Further, the deposition apparatus according to the present invention can be used before The ALD method can obtain a film of minimum thickness and composition. Figure 5A shows the thickness of the aluminum oxide (Alz〇3) film, and the aluminum oxide (A込%) film is formed by the device invented by the present invention. Figure 5β shows a uniformity diagram of the alumina j A丨2 〇3) film, by the apparatus of the invention = alumina (ai2o3) film. Before testing the alumina (Al2〇3) film, use Trimethyl sulphate (A1(CH3)3) and water vapor (M) are used as the source components for the formation of the oxide (1) 2 〇 3 ) film. In addition, 'the ALD method is used, respectively, Tai You 1 9 Η 2: s η Α (Α10 ) Renewal - 形成氧化铝晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆晶圆The oxygen formed by the experiment: the body clothing is in the range of 1 〇〇. The thickness of the film is shown in Figure 5. Each point represents a film thickness of 25 points. As shown in Figure 5, the film has a two-f hook value. The substrate measurement chamber RR-^ is in the range of 〇至 to 80 Å. Figure 5B is not formed on the substrate i to ^ thickness The uniformity is determined by the following formula. The film thickness is uniform.

第16頁 1261871 五、發明說明（12) [(tmax - tmin ) / ( 2 X Tavr ) ] X 1 Q 〇在上述公式中i Tavr為薄膜厚度之平均勻值，每一基板里測2 5點’ tmax為形成於每一基板上之每一薄膜最大厚度’ tmin為形成於每一基板上之每一薄膜最小厚度。根據圖5 B所示’沈積薄膜之厚度均勻性在2個百分比（％ )的範圍内。圖6A及6B所示為使用拉塞福背部散射光譜（RBS)量測由本發明所發明之設備形成之氧化鋁（A丨2 )薄膜圖。如圖6A所示，所量測之氧化鋁（Al2〇3 )薄膜在攝氏8〇度之Page 16 1261871 V. Description of invention (12) [(tmax - tmin ) / ( 2 X Tavr ) ] X 1 Q i In the above formula, i Tavr is the flat uniform value of the film thickness, measuring 25 points per substrate 'tmax is the maximum thickness of each film formed on each substrate 'tmin is the minimum thickness of each film formed on each substrate. The thickness uniformity of the deposited film shown in Fig. 5B is in the range of 2 percentage (%). 6A and 6B are graphs showing the formation of an alumina (A丨2) film formed by the apparatus of the present invention using rasape backscattering spectroscopy (RBS). As shown in Figure 6A, the measured alumina (Al2〇3) film is at 8 degrees Celsius.

溫度形成於基板上而圖6B所示之薄膜則在攝氏2〇〇度之溫度形成。當使用習知設備形成氧化鋁（Al2〇3 )薄膜時，來源成分例如三甲基鋁（Αία%)3)並未完全分解，因而導致雜質如碳的產生。為了克服習知技術所衍生的問題，需以高溫熱處理得到適當之氧化鋁組成。然而，當根據本發明形成氧化鋁UhO3 )薄膜時，雜質並不會存在於氧化鋁 (A 12 〇3 )溥膜中且氧化I呂之原子比（a 1 : 〇 )為2 2 ·· 2 8The temperature is formed on the substrate and the film shown in Fig. 6B is formed at a temperature of 2 degrees Celsius. When an alumina (Al2?3) film is formed using a conventional apparatus, a source component such as trimethylaluminum (3) is not completely decomposed, thereby causing generation of impurities such as carbon. In order to overcome the problems derived by the prior art, a high temperature heat treatment is required to obtain a suitable alumina composition. However, when the aluminum oxide UhO3 film is formed according to the present invention, the impurities are not present in the aluminum oxide (A 12 〇3 ) ruthenium film and the atomic ratio of the oxidized Ilu (a 1 : 〇) is 2 2 ·· 2 8

Α込％ )。另外，本發明無需熱處理。根據本發明之工作原理範圍，由於散佈裝置經由其本身之注射孔注射來源成分，因此在基板上之薄膜具有均勾 :厚度。同樣地’由於本發明採用原子層沈積（ald )方法，因此沈積在S板上之薄膜具有均句之成分且無雜質。熟悉本技藝者在不離開本發明之精神及範圍内可對本Α込%). In addition, the present invention does not require heat treatment. According to the working principle of the present invention, since the dispensing device injects the source component through its own injection hole, the film on the substrate has a uniform thickness: thickness. Similarly, since the present invention employs an atomic layer deposition (ALD) method, the film deposited on the S plate has a uniform composition and no impurities. Those skilled in the art can make this present without departing from the spirit and scope of the present invention.

12618711261871

第18頁 1261871Page 18 1261871

圖式簡單說明在附圖中：圖1所示為示意剖面圖，根據習知技術，說明一其有注射裝置之薄獏沈積設備；圖2所示為示意剖面圖，根據本發明，說明一具有散佈裝置之薄膜沈積設備；圖3A為根據本發明，散佈裝置之側視圖；圖3B為根據本發明，散佈裝置之仰視平面圖；圖4所不為根據本發明，散佈裝置之注射孔剖面圖；圖5A所示為氧化鋁（a12〇3)薄膜之厚度、 Δ 0 ^ ▼ Μ /于明所發明之設備形成氧化鋁（A I2 03 )薄膜務日日！示為氧化紹（Al2〇3)薄骐之均句性圖，藉由本毛月所毛明之設備形成氧化鋁（A 12〇3 )薄膜；及測由示為使用拉塞福背部散射光譜（RBS)量七月所“之設備形成之氧化！呂（Al2〇3)薄膜圖。【符號說明】 10反應室 11側壁部分 1 2 底端部分 1 3頂端部分 2 0 基板加熱構件 21夯 3 0氣體注射裝置 40基板入口 /出口BRIEF DESCRIPTION OF THE DRAWINGS In the drawings: FIG. 1 is a schematic cross-sectional view showing a thin tantalum deposition apparatus having an injection device according to the prior art; FIG. 2 is a schematic cross-sectional view showing a first embodiment according to the present invention. 3A is a side view of a dispensing device in accordance with the present invention; FIG. 3B is a bottom plan view of the dispensing device in accordance with the present invention; FIG. 4 is a cross-sectional view of the injection hole of the dispensing device in accordance with the present invention. Figure 5A shows the thickness of the alumina (a12〇3) film, Δ 0 ^ ▼ Μ / The film formed by the equipment invented by Ming Ming (A I2 03 ) film day! Shown as the average sentence pattern of Oxide (Al2〇3) thin enamel, the aluminum oxide (A 12〇3) film is formed by the equipment of the Maoyue Maoming; and the measurement is shown by using the Russef back scattering spectrum (RBS) The amount of oxidation of the device formed in July! Lu (Al2〇3) film diagram. [Description of symbols] 10 reaction chamber 11 side wall portion 1 2 bottom end portion 1 3 top portion 2 0 substrate heating member 21 夯 3 0 gas Injection device 40 substrate inlet/outlet

— 第19頁 1261871 圖式簡單說明 II 0 反應室 III 側壁部分 I 1 2 底端部分 II 3頂端部分 1 2 0 基板加熱構件 121夯 1 3 0 氣體注射裝置 140第一散佈裝置 140a 第二散佈裝置 1 50 基板入口 /出口 210 第一部分 220 第二部分 230 注射孔 230a大直徑部分 230b 小直徑部分— Page 19 1261871 Schematic description II 0 Reaction chamber III Side wall portion I 1 2 Bottom end portion II 3 Tip portion 1 2 0 Substrate heating member 121夯1 3 0 Gas injection device 140 First dispersing device 140a Second dispersing device 1 50 substrate inlet/outlet 210 first portion 220 second portion 230 injection hole 230a large diameter portion 230b small diameter portion

第20頁Page 20

Claims

1261871 案號 901281 S.l 六、申請專利範圍 1· 一種薄膜沈積用之設備，包括. -反應室，具有頂端部&、側八/ 一氣體注射裝置，穿透頂端部分二二及底端部分；一散佈裝置，連接氣體注射裴置亚，，源成分通過，· 形之第一部分、狀似截斷圓錐體形之> 4散佈裝置由圓柱注射孔所組成，其中該複數個注射孔f =部分、與複數個成，且來源成分經由複數個注射孔注f過該散佈裝置而形一基板加熱構件，位於反應室之g i及 |分所定義之反應空間内’安置於散佈裝^ 壁及底端部根據申請專利範圍第i項之薄土括一固定於反應室底端部分之 2肴’另外包案件。乂支撐基板加熱構 § SB 寒3.根據申請專利範圍第i項之薄 g反應室之側壁部份包含美柘Α π/ j m ^ ^具中5亥 I入/出該反應室，且該反V室之广出，’藉其可將基板傳 f室内之空氣排出之排氣口應至之底^部份包含一可將反應内孔女置於散佈裝置之第二部分之側面。射孔包據括申上專_^利範圍第4項之薄膜沈積用之設備，其中注又Λ源成分之大直徑部分及使來源成分速度增1261871 Case No. 901281 Sl VI. Patent Application No. 1 1. A device for film deposition, comprising: a reaction chamber having a top end & a side eight/one gas injection device, penetrating the tip portion 22 and the bottom end portion; a dispersing device, connected to the gas injection device, the source component passes, the first portion of the shape, and the shape of the truncated cone is formed. 4 The dispersing device is composed of a cylindrical injection hole, wherein the plurality of injection holes f = part, And a plurality of components, and the source component is shaped by a plurality of injection holes through the dispersing device to form a substrate heating member, which is disposed in the reaction space defined by the gi and the sub-section of the reaction chamber, and is disposed on the wall and the bottom end of the scattering device According to the scope of the patent application, the thin soil consists of two dishes that are fixed at the bottom end of the reaction chamber.乂Support substrate heating structure § SB cold 3. According to the patent application scope item i, the side wall portion of the thin g reaction chamber contains 柘Α π / jm ^ ^ with 5 hai I into/out of the reaction chamber, and the reaction The V-chamber is widely distributed, and the exhaust port through which the air can be discharged from the substrate can be placed on the side of the second portion of the dispersing device. The perforating package is included in the equipment for film deposition in the fourth item of the _^ profit range, in which the large diameter portion of the source component and the speed of the source component are increased.

1261871 案號 90128183 Q x#- ^ Μ Π 9 修正六、申請專利範圍加之小直徑部分。 6。根據申請專利範圍第4項之薄膜沈積用之設備，其中大直徑部分之直徑較小直徑部分大。 7 ·根據申請專利範圍第1項之薄膜沈積用之設備，其中基板加熱構件位於反應空間之中央而氣體注射裝置安置於反應室之頂端部分中央。 8 ·根據申請專利範圍第1項之薄膜沈積用之設備，另外包括複數個散佈裝置，分成位於頂端部分中央之第一散佈裝置、及位於頂端部分之第一散佈裝置周圍之第二散佈裝置以便注射來源成分。 9. 根據申請專利範圍第8項之薄膜沈積用之設備，其中來源成分包括主要反應成分及次要反應成分。 10. 根據申請專利範圍第9項之薄膜沈積用之設備，其中主要反應成分通過安置於頂端部分中央之第一散佈裝置，次要反應成分通過安置於第一散佈裝置周圍之第二散佈裝置。 11. 根據申請專利範圍第1 0項之薄膜沈積用之設備，其中當第一及第二散佈裝置安置於反應室之頂端部分時，第二1261871 Case No. 90128183 Q x#- ^ Μ Π 9 Amendment 6. Patent application range plus small diameter part. 6. The apparatus for film deposition according to item 4 of the patent application, wherein the large diameter portion has a smaller diameter portion and a larger diameter portion. The apparatus for film deposition according to the first aspect of the invention, wherein the substrate heating member is located at the center of the reaction space and the gas injection device is disposed at the center of the top end portion of the reaction chamber. 8. The apparatus for film deposition according to claim 1, further comprising a plurality of distributing means, dividing into a first distributing means located at the center of the top end portion and a second distributing means located around the first distributing means of the top end portion so that Inject the source ingredients. 9. The apparatus for film deposition according to item 8 of the patent application, wherein the source component comprises a main reaction component and a secondary reaction component. 10. The apparatus for film deposition according to claim 9, wherein the main reactive component passes through a first dispersing device disposed in the center of the top end portion, and the secondary reactive component passes through a second dispersing device disposed around the first dispersing device. 11. The apparatus for film deposition according to claim 10, wherein the first and second scattering means are disposed at a top end portion of the reaction chamber, the second

第22頁 1261871 案號 90128183 年條/更， 1~| [：} j^jL ----------J ；τ；尉六、申請專利範圍散佈裝置之一軸與第一散佈裝置之一轴形成約9 0度之夾角。 12. 根據申請專利範圍第1 0項之薄膜沈積用之設備，其中當第一及第二散佈裝置安置於反應室之頂端部分時，第二散佈裝置之一軸與第一散佈裝置之一轴形成小於90度之夾角。 13. 根據申請專利範圍第1 0項之薄膜沈積用之設備，其中次要反應成分係選自於由氨（NH3 )、聯氨（N2 H4 )、水蒸汽（H2 0 )、氧氣（02 )及臭氧（03 )所組成之群組。 14. 根據申請專利範圍第1項之薄膜沈積用之設備，其中注射孔之數量及尺寸端視反應室之反應空間而改變。 15. 根據申請專利範圍第1項之薄膜沈積用之設備，其中反應室之頂端部分為圓頂形。 1 6. 根據申請專利範圍第1項之薄膜沈積用之設備，其中基板加熱構件包括一體之加熱元件及電源供應器。 17. —種在沈積設備中形成薄膜之方法，其中沈積設備具有一反應室，其内具有反應空間，一安置於反應空間内之基板加熱構件，一位於反應室頂端部分之氣體注射裝置及Page 22 1261871 Case No. 90128183 Year/More, 1~| [:} j^jL ----------J; τ; 尉6. One of the shafts and the first spreading device of the patent application range distributing device One of the axes forms an angle of about 90 degrees. 12. The apparatus for film deposition according to claim 10, wherein when the first and second spreading means are disposed at a top end portion of the reaction chamber, one of the axes of the second distributing means forms an axis with the first distributing means An angle less than 90 degrees. 13. The apparatus for film deposition according to claim 10, wherein the secondary reaction component is selected from the group consisting of ammonia (NH3), hydrazine (N2H4), water vapor (H2 0 ), oxygen (02) And a group consisting of ozone (03). 14. The apparatus for film deposition according to claim 1, wherein the number and size of the injection holes vary depending on the reaction space of the reaction chamber. 15. The apparatus for film deposition according to the first aspect of the invention, wherein the top portion of the reaction chamber is dome-shaped. 1 6. The apparatus for film deposition according to the first aspect of the invention, wherein the substrate heating member comprises an integrated heating element and a power supply. 17. A method of forming a film in a deposition apparatus, wherein the deposition apparatus has a reaction chamber having a reaction space therein, a substrate heating member disposed in the reaction space, a gas injection device at a top portion of the reaction chamber, and

第23頁 1261871 _案號 90128183_年 φί_ 六、申請專利範圍一連接氣體注射裝置之散佈裝置，該散佈裝置包括圓柱形之第一部分、狀似截斷圓錐體形之第二部分、與複數個注射孔，此方法包括下列步驟：經由氣體注射裝置注射化學來源氣體；經由具有複數個注射孔之散佈裝置將化學來源氣體注 ^ 射至反應空間；及 - 反應化學來源氣體，在安置於基板加熱構件上方之基板表面形成薄膜。 18.根據申請專利範圍第1 7項之在沈積設備中形成薄膜之鲁方法，其中複數個注射孔安置於散佈裝置第二部分之側面。 1 9. 根據申請專利範圍第1 8項之在沈積設備中形成薄膜之 · 方法，其中每一注射孔包括接受化學來源氣體之大直徑部分及使化學來源氣體速度增加之小直徑部分。Page 23 1261871 _ Case No. 90128183_year φί_ VI. Patent Application Scope A dispensing device for connecting a gas injection device, the dispensing device comprising a first portion of a cylindrical shape, a second portion shaped like a truncated cone, and a plurality of injection holes The method comprises the steps of: injecting a chemical source gas via a gas injection device; injecting a chemical source gas into the reaction space via a dispensing device having a plurality of injection holes; and - reacting the chemical source gas over the substrate heating member A film is formed on the surface of the substrate. 18. The method of forming a film in a deposition apparatus according to claim 17 wherein a plurality of injection holes are disposed on a side of the second portion of the spreading device. 1 9. A method of forming a film in a deposition apparatus according to claim 18, wherein each injection hole comprises a large diameter portion that receives a chemical source gas and a small diameter portion that increases a chemical source gas velocity.

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