JP2002217181A - Vaporizer for supplying semiconductor raw materials - Google Patents
Vaporizer for supplying semiconductor raw materialsInfo
- Publication number
- JP2002217181A JP2002217181A JP2001011890A JP2001011890A JP2002217181A JP 2002217181 A JP2002217181 A JP 2002217181A JP 2001011890 A JP2001011890 A JP 2001011890A JP 2001011890 A JP2001011890 A JP 2001011890A JP 2002217181 A JP2002217181 A JP 2002217181A
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- chamber
- vaporizer
- liquid
- supplying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体製造用のＣ
ＶＤ(Chemical Vapor Deposition)装置に液体原料を気
化させて供給するための半導体原料供給用気化器に関
し、特に、液体原料を霧化する球形の霧化室と、霧化さ
れた液体原料を気化させるための球形の気化室とを備え
ることにより、気化効率の向上及び原料供給性の向上を
図ることができるようにするための新規な改良に関す
る。[0001] The present invention relates to a C-type semiconductor device.
A semiconductor material supply vaporizer for vaporizing and supplying a liquid material to a VD (Chemical Vapor Deposition) apparatus, particularly a spherical atomizing chamber for atomizing the liquid material, and vaporizing the atomized liquid material. The present invention relates to a novel improvement for providing a spherical vaporizing chamber for improving the vaporization efficiency and the raw material supply.
【０００２】[0002]
【従来の技術】従来、用いられていたこの種の装置とし
ては図２で示される、例えば、特開平８−１８６１０３
号公報に記載された薄膜の堆積装置用の気化器の構成を
挙げることができる。すなわち、図２において、符号１
で示されるものはヒータであり、気化室２は前記ヒータ
１により加熱されるように構成されている。図２は横断
面を示しているが、気化室２の内壁形状は実際には円筒
状である。2. Description of the Related Art FIG. 2 shows an example of this type of apparatus conventionally used.
The structure of a vaporizer for a thin film deposition apparatus described in Japanese Patent Application Laid-Open Publication No. H10-15064 can be mentioned. That is, in FIG.
Is a heater, and the vaporization chamber 2 is configured to be heated by the heater 1. FIG. 2 shows a cross section, but the inner wall shape of the vaporization chamber 2 is actually cylindrical.
【０００３】気化室２には原料供給管４及び液体原料供
給装置５を介して原料容器６が接続されており、液体原
料供給装置５により、原料供給管４を介して原料容器６
内の液体原料７を気化室２内に供給できるように構成さ
れている。また、気化室２には、原料供給管４の噴射ノ
ズル４Ａの周囲を覆って二重構造の管を構成するよう
に、キャリアガス供給管８が設けられている。このキャ
リアガス供給管８からは、キャリアガス管１０から供給
されるキャリアガス１０Ａがキャリアガス流量調整器９
によって流量調整されて気化室２内に噴射される。[0003] A raw material container 6 is connected to the vaporization chamber 2 via a raw material supply pipe 4 and a liquid raw material supply device 5.
It is configured such that the liquid source 7 therein can be supplied into the vaporization chamber 2. A carrier gas supply pipe 8 is provided in the vaporization chamber 2 so as to cover the periphery of the injection nozzle 4A of the raw material supply pipe 4 to form a double-structured pipe. From the carrier gas supply pipe 8, a carrier gas 10A supplied from a carrier gas pipe 10 is supplied with a carrier gas flow controller 9A.
Thus, the flow rate is adjusted and injected into the vaporization chamber 2.
【０００４】このような半導体原料供給用気化器におい
て、ヒータ１により気化室２が２００℃程度の所定温度
まで加熱された後、キャリアガス供給管８の先端の絞り
部８Ａからキャリアガス１０Ａが気化室２に噴射される
ことにより、原料供給管４の先端の噴射ノズル４Ａから
供給される液体原料７が気化室２内に噴射されて気化さ
れる。例えば、ＣＶＤ用の液体原料７として、固体原料
であるストロンチウムタンタルエトキシト（Ｓｒ〔Ｔａ
(ＯＥｔ)6〕2）を有機溶媒であるテトラハイドロフラン
（ＴＨＦ）に溶解させて原料供給管４から気化室２に供
給する場合は、この液体原料７がキャリアガス供給管８
の先端の絞り部８Ａで周囲の高速のキャリアガス１０Ａ
の流れによって大まかに分粒化され、さらにヒータ１に
よって加熱された気化室２の内壁２Ａに衝突することに
より瞬時に気化される。このようにして液体原料７が気
化されて生じた気体原料は、配管１１を通じてＣＶＤ装
置の反応室１２に供給され、ウエハ１３上に堆積され
る。In such a semiconductor material supply vaporizer, after the vaporization chamber 2 is heated to a predetermined temperature of about 200 ° C. by the heater 1, the carrier gas 10A is vaporized from the narrowed portion 8A at the tip of the carrier gas supply pipe 8. By being injected into the chamber 2, the liquid raw material 7 supplied from the injection nozzle 4 </ b> A at the tip of the raw material supply pipe 4 is injected into the vaporization chamber 2 and vaporized. For example, as a liquid source 7 for CVD, strontium tantalum ethoxylate (Sr [Ta
When (OEt) 6 ] 2 ) is dissolved in tetrahydrofuran (THF), which is an organic solvent, and is supplied from the raw material supply pipe 4 to the vaporization chamber 2, the liquid raw material 7 is supplied to the carrier gas supply pipe 8.
High-speed surrounding carrier gas 10A at the narrowed portion 8A at the tip
Is roughly divided by the flow of the gas, and is instantaneously vaporized by colliding with the inner wall 2A of the vaporization chamber 2 heated by the heater 1. The gaseous raw material generated by the vaporization of the liquid raw material 7 is supplied to the reaction chamber 12 of the CVD apparatus through the pipe 11 and is deposited on the wafer 13.
【０００５】[0005]
【発明が解決しようとする課題】従来の装置は以上のよ
うに構成されていたため、次のような課題が存在してい
た。すなわち、固体原料をテトラハイドロフラン等の溶
剤に溶解させた液体原料７を使用する場合、液体原料７
に含まれる固体原料と溶剤の気化する温度が異なるた
め、固体原料よりも溶剤が先に気化されてしまい、気化
室２の内壁２Ａに固体原料が析出したり、または、噴射
ノズル４Ａに固体原料が詰まるという問題がしばしば発
生していた。噴射ノズル４Ａに固体原料が詰まると、Ｃ
ＶＤ装置の反応室内に所望の組成の原料が供給されない
という課題があった。Since the conventional apparatus is configured as described above, there are the following problems. That is, when the liquid raw material 7 in which the solid raw material is dissolved in a solvent such as tetrahydrofuran is used, the liquid raw material 7
Since the temperature at which the solvent evaporates differs from that of the solid raw material contained in the solvent, the solvent is vaporized earlier than the solid raw material, and the solid raw material is deposited on the inner wall 2A of the vaporization chamber 2, or the solid raw material The problem of clogging often occurred. When the solid material is clogged in the injection nozzle 4A, C
There is a problem that a raw material having a desired composition is not supplied into the reaction chamber of the VD apparatus.
【０００６】本発明は、以上のような課題を解決するた
めになされたもので、特に、ＣＶＤ装置に供給する液体
原料の気化効率の向上及び原料供給性の向上を図ること
ができる半導体原料供給用気化器を提供することを目的
とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and in particular, a semiconductor material supply method capable of improving the vaporization efficiency of a liquid material supplied to a CVD apparatus and improving the material supply property. It is intended to provide a vaporizer.
【０００７】[0007]
【課題を解決するための手段】本発明の半導体原料供給
用気化器は、半導体を製造するＣＶＤ装置に液体原料を
気化して供給するために、キャリアガスにより搬送され
る前記液体原料をヒータで加熱して気化する半導体原料
供給用気化器において、前記キャリアガスにより搬送さ
れる前記液体原料を霧化するため内壁形状の一部若しく
は全てが曲面よりなる霧化室と、前記霧化室に接続さ
れ、前記霧化室内で霧化された液体原料を気化するため
内壁形状の一部若しくは全てが曲面よりなる気化室とを
備え、前記霧化室内で霧化された前記液体原料を前記気
化室で気化して前記ＣＶＤ装置に供給する構成であり、
また、前記霧化室又は気化室のいずれか一方の内壁形状
は球形である構成であり、また、前記霧化室に前記キャ
リアガスを供給するキャリアガス供給管は、前記キャリ
アガスが前記霧化室内で旋回流を形成する構成であり、
また、前記霧化室で霧化された液体原料を前記気化室に
供給するための連通孔は、前記霧化室で霧化された液体
原料が前記気化室内で旋回流を形成する構成であり、ま
た、前記霧化室は、前記液体原料に含有される有機溶媒
の気化温度以下に保温される構成であり、前記気化室
は、前記霧化室において霧化された前記液体原料に含有
される有機溶媒及び固体原料が気化する温度以上に保温
される構成であり、さらに、前記霧化室と前記気化室と
は断熱されている構成である。According to the present invention, there is provided a vaporizer for supplying a semiconductor raw material, which vaporizes the liquid raw material to a CVD apparatus for manufacturing a semiconductor and supplies the liquid raw material conveyed by a carrier gas with a heater. In the vaporizer for supplying a semiconductor raw material that is heated and vaporized, a part or all of an inner wall shape for atomizing the liquid raw material conveyed by the carrier gas is connected to the nebulizing chamber and the nebulizing chamber. A part of or all of the inner wall shape is formed of a curved surface for vaporizing the liquid material atomized in the atomization chamber, and the liquid material atomized in the atomization chamber is provided in the vaporization chamber. Is supplied to the CVD apparatus after being vaporized,
Further, the inner wall shape of one of the atomizing chamber and the vaporizing chamber is spherical, and the carrier gas supply pipe for supplying the carrier gas to the atomizing chamber is configured such that the carrier gas is supplied by the atomizing chamber. It is a configuration that forms a swirling flow indoors,
Further, the communication hole for supplying the liquid material atomized in the atomization chamber to the vaporization chamber is configured such that the liquid material atomized in the atomization chamber forms a swirling flow in the vaporization chamber. Further, the atomization chamber is configured to be kept at a temperature equal to or lower than the vaporization temperature of the organic solvent contained in the liquid material, and the vaporization chamber is contained in the liquid material atomized in the atomization chamber. The organic solvent and the solid raw material are kept at a temperature equal to or higher than the vaporization temperature, and the atomization chamber and the vaporization chamber are insulated.
【０００８】[0008]
【発明の実施の形態】以下、図面と共に本発明による半
導体原料供給用気化器の好適な実施の形態について詳細
に説明する。なお、従来装置と同一または同等部分には
同一符号を付し、その説明を省略する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a semiconductor material supply vaporizer according to the present invention will be described below in detail with reference to the drawings. The same or equivalent parts as those of the conventional device are denoted by the same reference numerals, and description thereof will be omitted.
【０００９】図１に示すように、本発明の半導体原料供
給用気化器は、キャリアガス１０Ａにより搬送される液
体原料７を霧化する霧化室１５と、この霧化室１５に接
続され、霧化された液体原料７を気化する気化室１６と
を備える。この霧化室１５及び気化室１６は、内壁形状
の一部若しくは全てが曲面よりなるように構成されてい
ればよく、例えば、球形や楕円体であればよいが、球形
が最も適している。なお、霧化室１５と気化室１６とは
断熱されており、それぞれに配設されるヒータ１Ａ、１
Ｂにより、独立した温度設定が可能である。As shown in FIG. 1, a vaporizer for supplying a semiconductor material according to the present invention is connected to an atomization chamber 15 for atomizing a liquid material 7 carried by a carrier gas 10A. A vaporizing chamber 16 for vaporizing the atomized liquid raw material 7; The atomizing chamber 15 and the vaporizing chamber 16 may be configured so that part or all of the inner wall shape is formed of a curved surface. For example, a spherical shape or an elliptical shape may be used, but a spherical shape is most suitable. The atomizing chamber 15 and the vaporizing chamber 16 are insulated, and the heaters 1A, 1A,
B allows independent temperature setting.
【００１０】図１において、球形の霧化室１５には、二
重構造の原料供給管４及びキャリアガス供給管８が接続
されている。図１には横断面を示すが、実際にはキャリ
アガス供給管８は、絞り部８Ａから霧化室１５内に噴射
されるキャリアガス１０Ａが霧化室１５内で旋回流を形
成するように、例えば、霧化室１５の内壁１５Ａの接線
方向を向くように配設されており、一方、原料供給管４
の噴射ノズル４Ａは、球形の霧化室１５の中心を向くよ
うに配設されている。なお、霧化室１５には複数の原料
供給管４及びキャリアガス供給管８が接続されていても
よく、このような場合は、各々の原料供給管４の向きが
霧化室１５中央部の方向に向くと共に、各々のキャリア
ガス供給管８が霧化室１５の内壁１５Ａの接線方向を向
くように配設されることが好ましい。In FIG. 1, a double-walled raw material supply pipe 4 and a carrier gas supply pipe 8 are connected to a spherical atomizing chamber 15. Although a cross section is shown in FIG. 1, in practice, the carrier gas supply pipe 8 is formed so that the carrier gas 10A injected into the atomization chamber 15 from the throttle portion 8A forms a swirling flow in the atomization chamber 15. For example, the raw material supply pipe 4 is disposed so as to face the tangential direction of the inner wall 15A of the atomization chamber 15.
Is disposed so as to face the center of the spherical atomizing chamber 15. Note that a plurality of raw material supply pipes 4 and a plurality of carrier gas supply pipes 8 may be connected to the atomization chamber 15. In such a case, the direction of each raw material supply pipe 4 is set at the center of the atomization chamber 15. It is preferable that each carrier gas supply pipe 8 is disposed so as to face the tangential direction of the inner wall 15 </ b> A of the atomizing chamber 15.
【００１１】また、気化室１６は、連通孔１７により霧
化室１５と接続されると共に、配管１１を通じてＣＶＤ
装置の反応室１２に接続されている。この連通孔１７
は、霧化室１５内で霧化された液体原料７を気化室１６
に誘導するための孔であるから、キャリアガス１０Ａが
気化室１６内で旋回流を形成するように、霧化室１６の
内壁１６Ａの接線方向を向くように配設されていること
が好ましい。また、気化室１６には複数の連通孔１７が
接続されるように構成されていてもよく、このような場
合は、各々の連通孔１７が霧化室１６の内壁１６Ａの接
線方向を向くように配設される。The vaporizing chamber 16 is connected to the atomizing chamber 15 through a communication hole 17 and is formed through a pipe 11 by CVD.
It is connected to the reaction chamber 12 of the device. This communication hole 17
Converts the liquid material 7 atomized in the atomization chamber 15 into the vaporization chamber 16.
Therefore, it is preferable that the carrier gas 10A is disposed so as to face the tangential direction of the inner wall 16A of the atomizing chamber 16 so that the carrier gas 10A forms a swirling flow in the vaporizing chamber 16. In addition, a plurality of communication holes 17 may be configured to be connected to the vaporization chamber 16. In such a case, each communication hole 17 is oriented in a tangential direction of the inner wall 16 </ b> A of the atomization chamber 16. It is arranged in.
【００１２】このような本発明の半導体原料供給用気化
器において、キャリアガス供給管８から霧化室１５内に
キャリアガス１０Ａを噴射しつつ、ストロンチウムタン
タルエトキシト（Ｓｒ〔Ｔａ(ＯＥｔ)6〕2）、トリフェ
ニルビスマス（ＢｉＰｈ3）等の固体原料をテトラハイ
ドロフラン（ＴＨＦ）等の有機溶媒に溶解した液体原料
７を噴射ノズル４Ａから噴射すると、液体原料７はヒー
タ１Ａで加熱された霧化室１５内で霧化され、霧状原料
となる。このとき、キャリアガス１０Ａは霧化室１５内
で旋回流を形成するので、液体原料７は効率よく均等に
霧化され、霧状原料が連通孔１７を通じて気化室１６に
圧送される。なお、霧化室１５において、液体原料７に
含まれる有機溶媒及び固体原料のうちの有機溶媒のみが
気化されることを抑制するために、液体原料７に含有さ
れる有機溶媒の気化温度以下に保温されることが望まし
い。In the vaporizer for supplying a semiconductor material according to the present invention, strontium tantalum ethoxylate (Sr [Ta (OEt) 6 ] is injected while the carrier gas 10A is injected from the carrier gas supply pipe 8 into the atomization chamber 15. 2 ) When a liquid raw material 7 in which a solid raw material such as triphenylbismuth (BiPh 3 ) is dissolved in an organic solvent such as tetrahydrofuran (THF) is injected from the injection nozzle 4A, the liquid raw material 7 is sprayed by the heater 1A. It is atomized in the gasification chamber 15 and becomes an atomized raw material. At this time, the carrier gas 10 </ b> A forms a swirling flow in the atomization chamber 15, so that the liquid material 7 is atomized efficiently and uniformly, and the atomized material is fed to the vaporization chamber 16 through the communication hole 17. In addition, in order to suppress that only the organic solvent contained in the liquid raw material 7 and the organic solvent contained in the solid raw material are vaporized in the atomization chamber 15, the temperature of the organic solvent contained in the liquid raw material 7 should be lower than the vaporization temperature. It is desirable to keep it warm.
【００１３】上述のように、連通孔１７は霧化室１６の
内壁１６Ａの接線方向を向くように配設されているた
め、この連通孔１７を通じて気化室１６に供給される霧
状原料は、気化室１６内で旋回流を形成する。そして、
ヒータ１Ｂにより加熱された気化室１６内で霧状原料が
旋回流を形成することにより、霧状原料は気化されて気
体原料となり、配管１１を通じてＣＶＤ装置の反応室１
２に供給される。なお、液体原料１７に含まれる有機溶
媒及び固体原料のうちの固体原料のみが気化されずに残
存することを抑制するために、気化室１６の壁面１６Ａ
は、気化室１６に供給された霧状原料に含有される有機
溶媒成分及び固体原料成分が気化する温度以上に設定さ
れることが望ましい。As described above, since the communication hole 17 is disposed so as to face the tangential direction of the inner wall 16A of the atomization chamber 16, the atomized raw material supplied to the vaporization chamber 16 through the communication hole 17 is: A swirling flow is formed in the vaporization chamber 16. And
The atomized raw material forms a swirling flow in the vaporization chamber 16 heated by the heater 1B, so that the atomized raw material is vaporized to become a gaseous raw material.
2 is supplied. In order to prevent only the solid material of the organic solvent and the solid material contained in the liquid material 17 from remaining without being vaporized, the wall surface 16A of the vaporization chamber 16 is formed.
It is desirable that the temperature is set to be equal to or higher than the temperature at which the organic solvent component and the solid raw material component contained in the atomized raw material supplied to the vaporization chamber 16 are vaporized.
【００１４】以上、本発明の半導体原料供給用気化器に
よれば、Ｓｒ〔Ｔａ(ＯＥｔ)6〕2、ＢｉＰｈ3等の固体
原料をＴＨＦに溶解した液体原料７を霧化室１５で霧化
すると共に気化室１６で気化すると共に、霧化室１５及
び気化室１６内で霧状原料及び気体原料の旋回流を形成
することにより、霧状原料及び気体原料に確実に熱を伝
達できるので、原料に過剰な熱を与えることなく、しか
も原料を所望の濃度及び流量で効率よく気化させること
により、高品質の気体原料をＣＶＤ装置の反応室に供給
することができる。また、気化室１６を球形にしたの
で、気化室１６の内壁１６Ａへの付着物の堆積が極めて
少ないため、配管１１等が閉塞する恐れがなく、メンテ
ナンスの容易な半導体原料供給用気化器を提供すること
ができる。As described above, according to the semiconductor material supply vaporizer of the present invention, the liquid material 7 obtained by dissolving solid materials such as Sr [Ta (OEt) 6 ] 2 and BiPh 3 in THF is atomized in the atomization chamber 15. In addition to the vaporization in the vaporization chamber 16 and the formation of the swirling flow of the atomized raw material and the gaseous raw material in the atomization chamber 15 and the vaporization chamber 16, the heat can be reliably transmitted to the atomized raw material and the gaseous raw material. By efficiently vaporizing the raw material at a desired concentration and flow rate without giving excessive heat to the raw material, a high-quality gas raw material can be supplied to the reaction chamber of the CVD apparatus. In addition, since the vaporization chamber 16 is formed in a spherical shape, the amount of deposits on the inner wall 16A of the vaporization chamber 16 is extremely small. can do.
【００１５】[0015]
【発明の効果】請求項１記載の発明によれば、液体原料
に確実に熱を伝達できるので、原料に過剰な熱を与える
ことなく、しかも原料を所望の濃度及び流量で効率よく
気化させることにより、高品質の気体原料をＣＶＤ装置
の反応室に供給できる半導体原料供給用気化器を提供す
ることができる。また、請求項２記載の発明によれば、
霧化室及び気化室内で霧化及び気化された液体原料に均
等に熱を伝達できるので、気化効率が高く、高品質の気
体原料をＣＶＤ装置の反応室に供給できる半導体原料供
給用気化器を提供することができる。また、請求項３記
載の発明によれば、霧化室に供給された液体原料を旋回
させることができるので、気化効率が高く、高品質の気
体原料をＣＶＤ装置の反応室に供給できる半導体原料供
給用気化器を提供することができる。また、請求項４記
載の発明によれば、霧化室で霧化された液体原料を気化
室で旋回させることができるので、気化効率が高く、高
品質の気体原料をＣＶＤ装置の反応室に供給できる半導
体原料供給用気化器を提供することができる。また、請
求項５記載の発明によれば、液体原料に含まれる有機溶
媒及び固体原料のうちの有機溶媒のみが気化されてしま
うことを抑制でき、液体原料を効率よく霧化できる半導
体原料供給用気化器を提供することができる。また、請
求項６記載の発明によれば、液体原料に含まれる有機溶
媒及び固体原料のうちの固体原料のみが気化されずに残
存することを抑制でき、液体原料を効率よく気化できる
半導体原料供給用気化器を提供することができる。さら
に、請求項７記載の発明によれば、霧化室及び気化室の
ぞれぞれにおける液体原料の霧化及び気化という機能を
効率よく発揮することのできる半導体原料供給用気化器
を提供することができる。According to the first aspect of the present invention, since heat can be reliably transmitted to the liquid raw material, the raw material can be efficiently vaporized at a desired concentration and flow rate without giving excessive heat to the raw material. Accordingly, it is possible to provide a semiconductor source supply vaporizer capable of supplying a high-quality gas source to a reaction chamber of a CVD apparatus. According to the second aspect of the present invention,
Since the heat can be evenly transferred to the liquid material atomized and vaporized in the atomization chamber and the vaporization chamber, a semiconductor material supply vaporizer capable of supplying a high quality gaseous material to the reaction chamber of the CVD apparatus with high vaporization efficiency. Can be provided. According to the third aspect of the present invention, since the liquid source supplied to the atomization chamber can be swirled, the semiconductor source which has high vaporization efficiency and can supply a high quality gas source to the reaction chamber of the CVD apparatus. A supply vaporizer can be provided. According to the fourth aspect of the present invention, since the liquid material atomized in the atomization chamber can be swirled in the vaporization chamber, high vaporization efficiency and high quality gaseous material can be supplied to the reaction chamber of the CVD apparatus. It is possible to provide a semiconductor material supply vaporizer that can be supplied. According to the fifth aspect of the present invention, it is possible to suppress the vaporization of only the organic solvent contained in the liquid raw material and the organic solvent of the solid raw material, and to efficiently atomize the liquid raw material. A vaporizer can be provided. Further, according to the invention of claim 6, it is possible to suppress only the solid solvent of the organic solvent and the solid material contained in the liquid material from remaining without being vaporized, and to supply the semiconductor material which can vaporize the liquid material efficiently. A vaporizer can be provided. Further, according to the invention of claim 7, there is provided a semiconductor material supply vaporizer capable of efficiently exhibiting functions of atomizing and vaporizing a liquid material in each of an atomization chamber and a vaporization chamber. be able to.
【図１】本発明による半導体原料供給用気化器を概略的
に示す構成図である。FIG. 1 is a configuration diagram schematically showing a semiconductor material supply vaporizer according to the present invention.
【図２】従来の薄膜の堆積装置用の気化器を概略的に示
す構成図である。FIG. 2 is a configuration diagram schematically showing a conventional vaporizer for a thin film deposition apparatus.
１Ａ、１Ｂ ヒータ ４ 原料供給管 ４Ａ 噴射ノズル ５ 液体原料供給装置 ６ 原料容器 ７ 液体原料 ８ 噴射ノズル ８Ａ 絞り部 ９ キャリアガス流量調整器 １０ キャリアガス管 １０Ａ キャリアガス １１ 配管 １２ 反応室 １３ ウエハ １５ 霧化室 １５Ａ 内壁 １６ 気化室 １６Ａ 内壁 １７ 連通孔 Reference Signs List 1A, 1B heater 4 raw material supply pipe 4A injection nozzle 5 liquid raw material supply device 6 raw material container 7 liquid raw material 8 injection nozzle 8A throttle section 9 carrier gas flow rate regulator 10 carrier gas pipe 10A carrier gas 11 pipe 12 reaction chamber 13 wafer 15 fog Gasification chamber 15A Inner wall 16 Vaporization chamber 16A Inner wall 17 Communication hole
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4F033 QA09 QB02Y QB03X QB13Y QD03 QD19 QD23 QE23 QF02X QF07X QF15Y 4K030 AA11 AA16 EA01 KA25 LA15 5F045 AB31 BB10 EE02 EE14 EE20 EK05 ──────────────────────────────────────────────────続 き Continued on front page F term (reference) 4F033 QA09 QB02Y QB03X QB13Y QD03 QD19 QD23 QE23 QF02X QF07X QF15Y 4K030 AA11 AA16 EA01 KA25 LA15 5F045 AB31 BB10 EE02 EE14 EE20 EK05
Claims (7)
(7)を気化して供給するために、キャリアガス(10A)によ
り搬送される前記液体原料(7)をヒータ(1A,1B)で加熱し
て気化する半導体原料供給用気化器において、前記キャ
リアガス(10A)により搬送される前記液体原料(7)を霧化
するため内壁形状の一部若しくは全てが曲面よりなる霧
化室(15)と、前記霧化室(15)に接続され、前記霧化室(1
5)内で霧化された液体原料(7)を気化するため内壁形状
の一部若しくは全てが曲面よりなる気化室(16)とを備
え、前記霧化室(15)内で霧化された前記液体原料(7)を
前記気化室(16)で気化して前記ＣＶＤ装置に供給するこ
とを特徴とする半導体原料供給用気化器。A liquid material is supplied to a CVD apparatus for manufacturing a semiconductor.
In order to vaporize and supply (7), a semiconductor material supply vaporizer that heats and vaporizes the liquid material (7) conveyed by a carrier gas (10A) with a heater (1A, 1B). Atomization chamber (15) in which part or all of the inner wall shape has a curved surface for atomizing the liquid material (7) conveyed by gas (10A), and connected to the atomization chamber (15), Atomization room (1
A part or all of the inner wall shape is provided with a vaporizing chamber (16) having a curved surface for vaporizing the liquid raw material (7) atomized in 5), and is atomized in the atomizing chamber (15). A vaporizer for supplying a semiconductor raw material, wherein the liquid raw material (7) is vaporized in the vaporization chamber (16) and supplied to the CVD apparatus.
か一方の内壁形状は球形であることを特徴とする請求項
１記載の半導体原料供給用気化器。2. The vaporizer according to claim 1, wherein the inner wall of one of the atomizing chamber and the vaporizing chamber has a spherical shape.
A)を供給するキャリアガス供給管(8)は、前記キャリア
ガス(10A)が前記霧化室(15)内で旋回流を形成するよう
に構成されることを特徴とする請求項１または２記載の
半導体原料供給用気化器。3. The carrier gas (10) is supplied to the atomization chamber (15).
The carrier gas supply pipe (8) for supplying (A) is configured such that the carrier gas (10A) forms a swirling flow in the atomization chamber (15). A vaporizer for supplying a semiconductor raw material as described in the above.
(7)を前記気化室(16)に供給するための連通孔(17)は、
前記霧化室(15)で霧化された液体原料(7)が前記気化室
(16)内で旋回流を形成するように構成されることを特徴
とする請求項１ないし３のいずれか記載の半導体原料供
給用気化器。4. A liquid material atomized in the atomization chamber (15).
A communication hole (17) for supplying (7) to the vaporization chamber (16),
The liquid material (7) atomized in the atomization chamber (15) is
The vaporizer for supplying a semiconductor raw material according to any one of claims 1 to 3, wherein a swirling flow is formed in (16).
含有される有機溶媒の気化温度以下に保温されることを
特徴とする請求項１ないし４のいずれか記載の半導体原
料供給用気化器。5. The semiconductor according to claim 1, wherein the atomization chamber is kept at a temperature equal to or lower than a vaporization temperature of an organic solvent contained in the liquid raw material. Vaporizer for raw material supply.
いて霧化された前記液体原料(7)に含有される有機溶媒
及び固体原料が気化する温度以上に保温されることを特
徴とする請求項１ないし５のいずれか記載の半導体原料
供給用気化器。6. The vaporization chamber (16) is kept at a temperature equal to or higher than a temperature at which an organic solvent and a solid material contained in the liquid material (7) atomized in the atomization chamber (15) are vaporized. The vaporizer for supplying a semiconductor raw material according to any one of claims 1 to 5, characterized in that:
熱されていることを特徴とする請求項１ないし６のいず
れか記載の半導体原料供給用気化器。7. The vaporizer for supplying a semiconductor raw material according to claim 1, wherein the atomization chamber (15) and the vaporization chamber (16) are insulated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001011890A JP2002217181A (en) | 2001-01-19 | 2001-01-19 | Vaporizer for supplying semiconductor raw materials |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001011890A JP2002217181A (en) | 2001-01-19 | 2001-01-19 | Vaporizer for supplying semiconductor raw materials |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002217181A true JP2002217181A (en) | 2002-08-02 |
Family
ID=18878974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001011890A Withdrawn JP2002217181A (en) | 2001-01-19 | 2001-01-19 | Vaporizer for supplying semiconductor raw materials |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002217181A (en) |
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