1257667 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種濕蝕刻設備及濕蝕刻方法。 【先前技術】 濕蝕刻技術以其成本低、產率高、可靠，對光罩盥基座材料 選擇性好等優點，在薄膜電晶體液晶顯示器(Thin_Film'Transistor Liquid Crystal Display，TFT-LCD )之前段半導體製程對玻璃基板之 蝕刻過程中得到廣泛應用。 *目胃，，對顯示器之顯示效果、特別係顯示器之解析度之要求 不斷巧昇，因此線距、線寬需蝕刻成越來越細，均勻性要求亦越 來越嚴格；並且，玻璃基板亦向大尺寸之方向發展。因此，對蝕 刻技術及相應之設備亦有更高之要求。 請參閱第-®，係-魏前技術濕侧設備之立體結構示意 ，。孩濕钱刻設備ίο包括一基板承載室m、一緩衝室ιι2、一 第一蝕刻室113、一第二蝕刻室114、一第三蝕刻室115、一渴傳 f室116、一漂洗室117、一乾燥室118、一乾傳送室119及 中心之維修區110。 ，严蝕刻設備10係水平排佈，該基板承載室lu分別與該緩 ^ ϋ及該乾傳送室119連接。該基板承載室111、該緩衝室 弟Γ蝕刻室113、該第二蝕刻室114、該第三蝕刻室115、 ，f、116:該漂洗室117、該乾燥室118及該乾傳送室119 ％繞呈矩形狀。該維修區110居於該濕蝕刻設備 久形成之中心矩形區域，分別與濕蝕刻設備ίο之其他 "玄緩衝室112、該第一蝕刻室113、1257667 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a wet etching apparatus and a wet etching method. [Prior Art] The wet etching technology has advantages such as low cost, high yield, reliability, and good selectivity to the reticle susceptor material, before the thin film semiconductor liquid crystal display (TFT-LCD). The segment semiconductor process is widely used in the etching process of glass substrates. * Eye stomach, the display effect of the display, especially the resolution of the display is constantly increasing, so the line spacing, line width need to be etched into more and more thin, uniformity requirements are more and more strict; and, glass substrate It also develops in the direction of large size. Therefore, there are higher requirements for etching technology and corresponding equipment. Please refer to the -®, Department-Wei-Technology for the wet-side equipment. The wet etching device ίο includes a substrate carrying chamber m, a buffer chamber ι2, a first etch chamber 113, a second etch chamber 114, a third etch chamber 115, a thirst chamber 116, and a rinsing chamber 117. A drying chamber 118, a dry transfer chamber 119 and a central service area 110. The rigorous etching apparatus 10 is horizontally arranged, and the substrate carrying chamber lu is connected to the buffer and the dry transfer chamber 119, respectively. The substrate carrying chamber 111, the buffer chamber etch chamber 113, the second etch chamber 114, the third etch chamber 115, f, 116: the rinsing chamber 117, the drying chamber 118, and the dry transfer chamber 119% It is rounded in a rectangle. The maintenance area 110 is located in a central rectangular area formed by the wet etching apparatus for a long time, and is respectively associated with the other wet etching apparatus ίο, the first buffer chamber 112, the first etching chamber 113,
至116分別平行排佈於該維修區110之另外兩側。 該第一蝕刻室113、該第二蝕刻室114及該第 ^洗室117、該乾燥室118及該乾傳送室H9分 >區110之兩側，該基板承載室與濕傳送 1257667 玻璃基板經前段製程處理完畢，進入該濕蝕刻設備10之基板 承載室111，該緩衝室U2係將待蝕刻之玻璃基板由該基板承載室 111裝載於其上，使得玻璃基板順序進入與該緩衝室112直線排佈 之相連之該第一蝕刻室113、第二蝕刻室114與第三蝕刻室115。 钱刻完畢之玻璃基板進入該濕傳送室n6内，由滾筒或夾具伴以 ，離子水伴隨高壓對玻璃基板進行清洗傳送過程，隨後依次進入 該漂洗室117、該乾燥室us及該乾傳送室119。 洗室117係使用高壓水柱刮除玻璃基板表面之副生成物 及伴隨向密度之噴霧對玻璃基板表面作徹底清洗。該傳送室119 f處理完畢之玻璃基板卸載至該基板承載室m，再由該基板承載 至111向後續製程傳送，如此，玻璃基板之傳送路徑形成。 風—該維修區110係封閉區域，其内設置有濕蝕刻製程所需之化 予管線及氣體管線，人員可進入其内進行維修。該缓衝室112下 玄維修區11〇之人口通道(未標示），由此可進人該維修區⑽ 對各部份段點進行維修管護。 ，常’在玻璃基板尺寸較A之情況下，位於玻絲板四周區 二^刻所產生之副生成物較易排除’而位於玻璃基板_央區域 =所產生之副生成物較難排除，未被排除之副生成物阻礙濕 A進步進行，因此玻璃基板四周區域之姓刻速度較快，中 、品^之侧速度較慢。在應用該濕侧設備10 ϋϊΐ室，該第二侧室114及該第三_室115之侧過 料進行橫向_，目且也會對被姓刻材 基板四周區域之Λ ΐ紐觀斜，玻璃 ⑽，因此造成_品質下降，產品二重^ 實為必Ϊ於此，提供—種侧品質好、產品良率高之祕刻設備 【發明内容】 1257667 本發明之目的在於提供-種姓刻品質好、產品良率高之渴触 刻設備。 ”” 本發明之另一目的在於提供一種蝕刻品質好、產品良 濕姓刻製程。 對應於上述目的，本發明提供一種濕蝕刻設備，包括呈順序 排=之：一承載及緩衝區、一第一蝕刻室、一清洗室、一第二蝕 刻至、-漂洗及乾祕送區，該第―侧室使祕刻液對玻璃基 板進行預侧及主侧，該清洗室採用高壓水柱清除基板於該第 一蝕刻室内被蝕刻後形成在其表面上之副生成物。 對應於上述另-目的，本發明提供一種濕姓刻方法，包括順 序，佈之步驟：承載及猶，承制需紐侧之朗基板並使 入步驟；第—段細，使祕刻液對玻璃基板進行預 璃^板於弟一段蝕刻内被蝕刻後形成在其表面上之副生成物丨第 二段蝕刻，使用蝕刻液對玻璃基板進行過蝕刻(〇ver王tc 乾燥傳送，送至後續製程。 /、及 一相較於先前技術：本發明濕蝕刻設備中，於第一蝕刻室盥第 清洗室，該清洗室係使用高壓水柱清除玻^基 刻方法中’於第—段侧與第二段侧之間逕i清 列後用高壓水柱清除玻璃基板於該第—段_内被钱 ^後^成在其表面上之副生成物。玻璃基板進人該第二侧 弟一奴蝕刻後，由於不存在副生成物阻礙蝕刻進一步進 =此玻璃_之中央區域與四周區域可同時且速度相同地i :刻;:四周區域之蝕刻也可以同時完成，因此 【實施方式】 堪-第二圖，係本發明濕蝴設備第—實施方式之立體级 構不思圖。該·刻設備20包括一基板承載室2U、一緩g 1257667 212、一第一触刻室213、一清洗室214、一第二I虫刻室215 傳送室216、一漂洗室217、一乾燥室218、一乾傳送室219及居 於中心之維修區210。 該濕蝕刻設備20係水平排佈，該基板承載室211分別與該緩 衝至212及該乾傳送室219連接。該基板承載室211、該緩衝室 212、該第一蝕刻室213、該清洗室214、該第二蝕刻室2/5、該濕 傳送室216、該漂洗室217、該乾燥室218及該乾傳送室219 ^ 首尾相連，環繞呈矩形狀。該維修區210居於該濕蝕刻設備2〇各 部份環繞形成之中心矩形區域，分別與濕姓刻設備2〇之其他各部 份相鄰。 /、 ° 該緩衝室212、該第一蝕刻室213、該清洗室214及該第二蝕 刻室215與該漂洗室217、該乾燥室218及該乾傳送室21^分&平 行排佈於該維修區210之兩側，該基板承載室2Π與濕傳送室216 分別平行排佈於該維修區210之另外兩側。 μ 、玻璃基板經前段製程處理完畢，進入該濕蝕刻設備2〇之基板 承載室211，該緩衝室212係將待蝕刻之玻璃基板由該基板承載室 211衣載於其上’使得玻璃基板順序進入與該緩衝室Η]直線排佈 之，連之該第一蝕刻室213、清洗室214與第二蝕刻室215。該清 洗室214係使用高壓水柱刮除玻璃基板於該第一蝕刻室213 ^ 蝕刻後形成在其表面上之副生成物，玻璃基板進入該第二蝕刻室 215後，由於不存在副生成物阻礙蝕刻進一步進行之情況，因2匕玻 蝕刻完畢之玻璃基板進入該濕傳送室216内， 璃基板進行清洗傳送過程广隨=次 進入3你冼至217、該乾燥室218及該乾傳送室219。 該傳送室⑽贿理完畢之賴基板_至該基板承栽室 1257667 211，再由該基板承載室211向後續製程傳送，如此，玻璃基板之 傳送路徑形成。 該濕姓刻設備20中，該基板承載室211及緩衝室212為承載 及緩衝區；該濕傳送室216、漂洗室217、乾燥室218及乾傳送室 219為漂洗及乾燥傳送區。Up to 116 are respectively arranged in parallel on the other sides of the maintenance area 110. The first etching chamber 113, the second etching chamber 114 and the second washing chamber 117, the drying chamber 118 and the dry transfer chamber H9 are divided into two sides of the region 110, and the substrate carrying chamber and the wet conveying 1257667 glass substrate After the pre-process process is completed, the substrate carrying chamber 111 of the wet etching apparatus 10 is entered. The buffer chamber U2 is loaded with the glass substrate to be etched by the substrate carrying chamber 111, so that the glass substrate sequentially enters the buffer chamber 112. The first etching chamber 113, the second etching chamber 114, and the third etching chamber 115 are connected in a straight line. The engraved glass substrate enters the wet transfer chamber n6, accompanied by a roller or a jig, and the ionized water is subjected to a cleaning transfer process with the high pressure, and then sequentially enters the rinse chamber 117, the drying chamber us, and the dry transfer chamber. 119. In the washing chamber 117, a by-product of the surface of the glass substrate is scraped off using a high-pressure water column, and the surface of the glass substrate is thoroughly cleaned with a spray to a density. The glass substrate processed by the transfer chamber 119 f is unloaded to the substrate carrying chamber m, and then carried by the substrate to 111 for subsequent processes, so that the transfer path of the glass substrate is formed. Wind - The service area 110 is an enclosed area in which the lines and gas lines required for the wet etching process are provided for personnel to enter for maintenance. The buffer room 112 has a population passage (not labeled) in the Xuan maintenance area 11 , so that the maintenance area (10) can be entered into the maintenance area (10) for maintenance and management. In the case where the size of the glass substrate is smaller than A, the by-products generated in the surrounding area of the glass plate are easier to exclude, and it is difficult to exclude the by-products generated in the glass substrate_central area. The unremoved by-products hinder the progress of the wet A, so the surnames of the surrounding areas of the glass substrate are faster, and the sides of the middle and the lower sides are slower. In the application of the wet side device 10 chamber, the side of the second side chamber 114 and the third chamber 115 are superimposed laterally, and also for the area around the substrate of the surnamed substrate, the glass (10) Therefore, the quality of the product is reduced, and the product is two-fold. Therefore, it is necessary to provide a secret engraving device with good side quality and high product yield. [Abstract] The purpose of the present invention is to provide a good quality of the caste. A product with high yield and thirst. Another object of the present invention is to provide a process which has good etching quality and good product wetness. Corresponding to the above object, the present invention provides a wet etching apparatus comprising: a row and a buffer, a first etching chamber, a cleaning chamber, a second etching to, a rinsing and a dry dispensing area. The first side chamber causes the secret engraving liquid to perform a pre-side and a main side on the glass substrate, and the cleaning chamber uses a high-pressure water column to remove the by-product formed on the surface of the substrate after being etched in the first etching chamber. Corresponding to the above-mentioned other objects, the present invention provides a method for wet surname engraving, including the sequence, the steps of the cloth: carrying and judging, and the substrate is required to be placed on the side of the button, and the step is made into a step; The glass substrate is etched by the pre-glazed plate in a second etching process to form a by-product on the surface thereof, and the second substrate is etched, and the glass substrate is etched using an etching solution (〇verwang tc is dried and sent to the subsequent Process and/or compared with the prior art: in the wet etching apparatus of the present invention, in the first etching chamber, the cleaning chamber is cleaned by a high-pressure water column using a method of removing the glass from the first step side. After the diameter i of the second section is cleared, the glass substrate is removed by the high-pressure water column, and the by-product is formed on the surface of the glass substrate in the first section. The glass substrate enters the second side of the slave. After etching, since there is no by-product, the etching is further hindered. The central region and the surrounding region of the glass can be simultaneously and at the same speed i: engraving; the etching of the surrounding regions can also be completed at the same time, so [Embodiment] The second figure is the wet of the present invention The three-dimensional structure of the butterfly device-implementation device includes a substrate carrying chamber 2U, a slow g 1257667 212, a first etch chamber 213, a cleaning chamber 214, and a second insect. The chamber 215 is a transfer chamber 216, a rinse chamber 217, a drying chamber 218, a dry transfer chamber 219, and a centrally located service area 210. The wet etching apparatus 20 is horizontally arranged, and the substrate carrying chamber 211 is buffered to 212, respectively. The dry transfer chamber 219 is connected to the substrate carrying chamber 211, the buffer chamber 212, the first etching chamber 213, the cleaning chamber 214, the second etching chamber 2/5, the wet transfer chamber 216, and the rinse chamber 217. The drying chamber 218 and the dry transfer chamber 219 are connected end to end and are surrounded by a rectangular shape. The maintenance area 210 is located in a central rectangular area formed by the parts of the wet etching apparatus 2, respectively. The other portions are adjacent to each other. /, ° The buffer chamber 212, the first etching chamber 213, the cleaning chamber 214 and the second etching chamber 215, the rinsing chamber 217, the drying chamber 218, and the dry transfer chamber 21^ The sub- & are arranged in parallel on both sides of the maintenance area 210, the substrate carrying chamber 2 is wet and wet The transfer chambers 216 are respectively arranged in parallel on the other sides of the repair area 210. The glass substrate is processed by the front stage process and enters the substrate carrying chamber 211 of the wet etching apparatus 2, and the buffer chamber 212 is the glass to be etched. The substrate is linearly arranged by the substrate carrying chamber 211 on the surface such that the glass substrate sequentially enters the buffer chamber ,, and the first etching chamber 213, the cleaning chamber 214 and the second etching chamber 215 are connected. The chamber 214 is formed by scraping off the glass substrate to form a by-product on the surface of the first etching chamber 213 after etching using the high-pressure water column. After the glass substrate enters the second etching chamber 215, the by-product is hindered from etching. In the case of the process, the glass substrate which has been etched by the bismuth glass enters the wet transfer chamber 216, and the glazing substrate is subjected to the cleaning and transporting process, and the crystallization chamber 217, the drying chamber 218, and the dry transfer chamber 219. The transfer chamber (10) is completed by the substrate_to the substrate carrying chamber 1257667 211, and then transferred from the substrate carrying chamber 211 to a subsequent process, so that the transfer path of the glass substrate is formed. In the wet etching apparatus 20, the substrate carrying chamber 211 and the buffer chamber 212 are carrying and buffer zones; the wet transfer chamber 216, the rinsing chamber 217, the drying chamber 218, and the dry transfer chamber 219 are rinsing and drying transfer zones.
相較於先前技術：本發明濕姓刻設備中，於第一姓刻室2B 與第一姓刻室215之間設置清洗室214,該清洗室214係使用高壓 水柱刮除玻璃基板於該第一蝕刻室213内被蝕刻後形成在其表面 上之副生成物，玻璃基板進入該第二蝕刻室215後，由於不存在 副生成物阻礙蝕刻進一步進行之情況，因此玻璃基板之中央區域 與四周區域可同時且速度相同地進行蝕刻，並且中央區域與四周 區域之蝕刻也可以同時完成，蝕刻出來之蝕刻品質好，產^良率 高。Compared with the prior art: in the wet surging apparatus of the present invention, a cleaning chamber 214 is disposed between the first surname chamber 2B and the first surname chamber 215, and the cleaning chamber 214 is used to scrape the glass substrate using the high-pressure water column. After the etched chamber 213 is etched to form a by-product on the surface thereof, after the glass substrate enters the second etch chamber 215, since the by-product does not hinder the etching, the central region and the periphery of the glass substrate The region can be etched simultaneously and at the same speed, and the etching of the central region and the surrounding region can also be completed at the same time, the etching quality of the etching is good, and the yield is high.
請f閱第三圖，係本發明之濕蝕刻設備第二實施方式之立體 ，構示意圖。該濕蝕刻設備30包括順序呈直線排佈之一基板承載 至311、一乾傳送室319、一乾燥室318 ' —漂洗室317、一第二 巧刻至316、一清洗室315、一第一姓刻室314及一升降室313， 還^括一乾傳送帶312。該乾傳送帶312位於該乾傳送室319、該 j室318、該漂洗室317、該第二侧室316、該清洗室315及 一蝕刻室314之上方，且與該基板承載室311及該升降室3U 课〇 該基板承載室311分別與該乾傳送帶312及該乾傳送室319 乾傳送帶312將由該基板承載室311上裝載之玻璃基板 乾水平傳送至該升降室313,玻璃基板經升降室313由上層垂 、然後順序進入第一姓刻$ 314、清洗室215、第二侧 室317、乾燥室318及乾傳送室319，該乾傳送室319 ί 之玻雜板卸載至該基板承載室311完成玻璃基板之 1寻迗:再由該基板承載室311向後續製程傳送。 该濕蝕刻設備30中，該基板承載室311、乾傳送帶312及升 1257667 降室313為承載及緩衝區；該漂洗室317、乾燥室318及乾傳送室 319為漂洗及乾燥傳送區。 請參閱第四圖，係本發明濕蝕刻方法之流程圖。本發明濕蝕 刻方法包括以下步驟：（401)承載及緩衝，於基板承載室裡承載所 需要被蝕刻之玻璃基板，並通過緩衝室或乾傳送帶及升降室使玻 璃基板順序進入下一步驟；（402)第一段#刻，於第一姓刻室裡使 用蝕刻液對玻璃基板進行預蝕刻(pre_Etch^主蝕刻(Main_Etch); (403)清洗，於清洗室裡使用高壓水柱刮除玻璃基板於第一段蝕刻 内被蝕刻後形成在其表面上之副生成物；（4〇4)第二段蝕刻，於第 二蝕刻室裡使用與第一段姓刻相同之蝕刻液對玻璃基板進行過蝕 刻(Over-Etch)，於玻璃基板上得到所需要之圖案；（4〇5)漂洗及乾 燥傳送，由滾筒或夾具伴以去離子水伴隨高壓對玻璃基板進行清 洗，送後，然後使用高壓水柱刮除玻璃基板表面之副生成物及伴 隨咼速 、度之喷霧對玻璃基板表面作徹底清洗，乾燥後傳送至後續 相較於先前技術：本發明濕蝕刻設備中，於第一蝕刻室與第 二蝕刻室之間設置清洗室，該清洗室係使用高壓水柱刮除破^基 板於該第一姓刻室内被蝕刻後形成在其表面上之副生成物。或^ 本發明濕蝕刻方法中，於第一段蝕刻與第二段蝕刻之間逕行产 洗，該清洗係使用高壓水柱刮除玻璃基板於該第—魏 二 :後Si其fit之:生成物。玻璃基板進入該第二蝕刻室或 弟一奴蝕刻後，由於不存在副生成物阻礙蝕刻進一步進 ，，因此朗基板之巾央區域與四周區域可同時且速度= 行蝕刻，並且巾央d域與四顺域之_也 出來之侧品質m率高。 ’ I虫刻 綜上所述，本發明確已符合發明專利要件，羡依 2:惟，以上所述者僅為本發明之較佳實施方式，舉 ίϊϊ之人士，在援依本案發明精神所作之等效修輕 應包含於以下之申請專利範圍内。 p飞夂化，皆 1257667 【圖式簡單說明】 ί ί:,前技術濕蝕刻設備之立體結構示意圖。 ==圖係本务明濕蝕刻設備第一實施方式之立體結構示意圖。 第二圖係本發明濕蝕刻設備第二實施方式之立體結構示意圖。 第四圖係本發明濕蝕刻方法之流程圖。 【主要元件符號說明】 濕蝕刻設備 20、30 基板承載室 211 ^ 311 緩衝室 212 第一蝕刻室 213 、 314 清洗室 214 、 315 第二蝕刻室 215 、 316 濕傳送室 216 漂洗室 217 、 317 乾燥室 218、318 乾傳送室 219 、 319 維修區 210 升降室 313 乾傳送帶 312 12Please refer to the third drawing, which is a perspective view of a second embodiment of the wet etching apparatus of the present invention. The wet etching apparatus 30 includes a substrate arranged in a linear arrangement to 311, a dry transfer chamber 319, a drying chamber 318' - a rinsing chamber 317, a second ingenuity to 316, a cleaning chamber 315, and a first surname. The engraving chamber 314 and a lifting chamber 313 also include a dry conveyor belt 312. The dry conveyor belt 312 is located above the dry transfer chamber 319, the j chamber 318, the rinsing chamber 317, the second side chamber 316, the cleaning chamber 315 and an etching chamber 314, and the substrate carrying chamber 311 and the lifting chamber 3U 〇 the substrate carrying chamber 311 and the dry conveyor 312 and the dry transfer chamber 319 dry conveyor belt 312 to horizontally transport the glass substrate loaded on the substrate carrying chamber 311 to the lifting chamber 313, the glass substrate is passed through the lifting chamber 313 The upper layer is hung, and then sequentially enters the first surname $314, the cleaning chamber 215, the second side chamber 317, the drying chamber 318, and the dry transfer chamber 319, and the dry transfer chamber 319 ί of the glass plate is unloaded to the substrate carrying chamber 311 to complete the glass. The substrate 1 is searched: the substrate carrying chamber 311 is further transferred to a subsequent process. In the wet etching apparatus 30, the substrate carrying chamber 311, the dry conveyor belt 312 and the rising 1257667 descending chamber 313 are carrying and buffer zones; the rinsing chamber 317, the drying chamber 318 and the dry transfer chamber 319 are rinsing and drying transfer zones. Please refer to the fourth figure, which is a flow chart of the wet etching method of the present invention. The wet etching method of the present invention comprises the following steps: (401) carrying and buffering, carrying the glass substrate to be etched in the substrate carrying chamber, and sequentially passing the glass substrate into the next step through the buffer chamber or the dry conveyor belt and the lifting chamber; 402) The first paragraph #刻, in the first surname chamber, using an etching solution to pre-etch the glass substrate (pre_Etch^ main etching (Main_Etch); (403) cleaning, using a high-pressure water column in the cleaning chamber to scrape the glass substrate The first stage is etched to form a by-product on the surface thereof; (4〇4) the second stage is etched, and the glass substrate is used in the second etching chamber using the same etching liquid as the first stage Etching (Over-Etch), obtaining the desired pattern on the glass substrate; (4〇5) rinsing and drying transfer, cleaning the glass substrate with a roller or clamp accompanied by deionized water with high pressure, sending, and then using high pressure The water column scrapes off the by-products on the surface of the glass substrate and sprays the surface of the glass substrate with a spray of idle speed and degree, and is dried and then transferred to the subsequent phase. In the wet etching apparatus of the present invention, A cleaning chamber is disposed between the first etching chamber and the second etching chamber, and the cleaning chamber scrapes off the by-product formed on the surface of the substrate after being etched in the first surname chamber by using a high-pressure water column. In the wet etching method of the invention, the cleaning is performed between the first etching and the second etching, and the cleaning is performed by using a high-pressure water column to scrape the glass substrate in the first: after the Si: the resultant: the glass substrate After entering the second etching chamber or the etched by the slave, since the by-product does not hinder the etching further, the central region and the surrounding region of the substrate can be simultaneously and speed = row etching, and the towel d domain and the fourth The quality of the side is also high. 'I insects in summary, the present invention has indeed met the requirements of the invention patent, according to 2: However, the above is only the preferred embodiment of the present invention The equivalent repairing light of the person in charge of the invention should be included in the following patent application scope. p flying, all 1257667 [simple description of the drawing] ί ί:, the former technology wet etching equipment Schematic diagram of the three-dimensional structure. The schematic view of the first embodiment of the wet etching apparatus of the present invention is a three-dimensional structure diagram of the second embodiment of the wet etching apparatus of the present invention. The fourth figure is a flow chart of the wet etching method of the present invention. Main component symbol description] Wet etching device 20, 30 substrate carrying chamber 211 ^ 311 buffer chamber 212 first etching chamber 213, 314 cleaning chamber 214, 315 second etching chamber 215, 316 wet transfer chamber 216 rinsing chamber 217, 317 drying chamber 218, 318 dry transfer chamber 219, 319 maintenance area 210 lifting room 313 dry conveyor belt 312 12