TWI255432B - Active matrix organic electroluminescent display device and fabricating method thereof - Google Patents

Active matrix organic electroluminescent display device and fabricating method thereof Download PDF

Info

Publication number: TWI255432B
Authority: TW; Taiwan
Prior art keywords: layer; gate; source; insulator; cathode
Prior art date: 2002-06-03

Application number

TW092110050A

Other languages

English (en)

Chinese (zh)

Other versions

TW200307893A (en

Inventor

Jae-Yong Park

Joon-Kyu Park

Original Assignee

Lg Philips Lcd Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-06-03

Filing date

2003-04-29

Publication date

2006-05-21

2002-06-03 Priority claimed from KR10-2002-0031045A external-priority patent/KR100484591B1/ko

2003-04-29 Application filed by Lg Philips Lcd Co Ltd filed Critical Lg Philips Lcd Co Ltd

2003-12-16 Publication of TW200307893A publication Critical patent/TW200307893A/zh

2006-05-21 Application granted granted Critical

2006-05-21 Publication of TWI255432B publication Critical patent/TWI255432B/zh

Links

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239000000758 substrate Substances 0.000 claims abstract description 30
239000010410 layer Substances 0.000 claims description 370
239000003990 capacitor Substances 0.000 claims description 71
239000012212 insulator Substances 0.000 claims description 61
239000000872 buffer Substances 0.000 claims description 41
238000002161 passivation Methods 0.000 claims description 38
239000004020 conductor Substances 0.000 claims description 35
239000004065 semiconductor Substances 0.000 claims description 31
239000011229 interlayer Substances 0.000 claims description 23
229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
238000003860 storage Methods 0.000 claims description 17
229910052732 germanium Inorganic materials 0.000 claims description 16
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 16
239000000463 material Substances 0.000 claims description 16
229920005591 polysilicon Polymers 0.000 claims description 15
229910052751 metal Inorganic materials 0.000 claims description 12
239000002184 metal Substances 0.000 claims description 12
YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 11
230000015572 biosynthetic process Effects 0.000 claims description 6
AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 6
238000000746 purification Methods 0.000 claims description 6
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150000002500 ions Chemical class 0.000 claims description 3
238000004020 luminiscence type Methods 0.000 claims description 3
239000011368 organic material Substances 0.000 claims description 3
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229910052738 indium Inorganic materials 0.000 claims 2
229910052797 bismuth Inorganic materials 0.000 claims 1
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239000002305 electric material Substances 0.000 claims 1
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
-1 indium epoxide Chemical class 0.000 claims 1
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PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 1
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KMWHNPPKABDZMJ-UHFFFAOYSA-N cyclobuten-1-ylbenzene Chemical compound C1CC(C=2C=CC=CC=2)=C1 KMWHNPPKABDZMJ-UHFFFAOYSA-N 0.000 description 1
CFBGXYDUODCMNS-UHFFFAOYSA-N cyclobutene Chemical compound C1CC=C1 CFBGXYDUODCMNS-UHFFFAOYSA-N 0.000 description 1
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239000000126 substance Substances 0.000 description 1
MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
229910001936 tantalum oxide Inorganic materials 0.000 description 1
NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Electroluminescent Light Sources (AREA)
Thin Film Transistor (AREA)
Led Devices (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

TW092110050A 2002-06-03 2003-04-29 Active matrix organic electroluminescent display device and fabricating method thereof TWI255432B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
KR10-2002-0031045A KR100484591B1 (ko)	2001-12-29	2002-06-03	능동행렬 유기전기발광소자 및 그의 제조 방법

Publications (2)

Publication Number	Publication Date
TW200307893A TW200307893A (en)	2003-12-16
TWI255432B true TWI255432B (en)	2006-05-21

Family

ID=31713066

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW092110050A TWI255432B (en)	2002-06-03	2003-04-29	Active matrix organic electroluminescent display device and fabricating method thereof

Country Status (3)

Country	Link
JP (1)	JP4091481B2 (ja)
CN (1)	CN100470842C (ja)
TW (1)	TWI255432B (ja)

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JP4507611B2 (ja) *	2004-01-29	2010-07-21	セイコーエプソン株式会社	有機エレクトロルミネッセンス装置、及び電子機器
KR100646297B1 (ko) *	2004-03-05	2006-11-23	도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드	표시 장치의 제조 방법
JP2005340802A (ja) *	2004-04-28	2005-12-08	Semiconductor Energy Lab Co Ltd	半導体装置及び表示装置の作製方法
JP4549889B2 (ja)	2004-05-24	2010-09-22	三星モバイルディスプレイ株式會社	キャパシタ及びこれを利用する発光表示装置
KR100589375B1 (ko) *	2004-05-24	2006-06-14	삼성에스디아이 주식회사	커패시터 및 이를 이용하는 발광 표시 장치
KR100689316B1 (ko) *	2004-10-29	2007-03-08	엘지.필립스 엘시디 주식회사	유기전계발광다이오드소자 및 그 제조방법
US7948171B2 (en) *	2005-02-18	2011-05-24	Semiconductor Energy Laboratory Co., Ltd.	Light emitting device
US7652291B2 (en)	2005-05-28	2010-01-26	Samsung Mobile Display Co., Ltd.	Flat panel display
KR100712295B1 (ko)	2005-06-22	2007-04-27	삼성에스디아이 주식회사	유기 전계 발광 소자 및 그 제조 방법
KR100665943B1 (ko)	2005-06-30	2007-01-09	엘지.필립스 엘시디 주식회사	유기전계 발광 디스플레이 장치 및 구동방법
US7898623B2 (en) *	2005-07-04	2011-03-01	Semiconductor Energy Laboratory Co., Ltd.	Display device, electronic device and method of driving display device
JP4939045B2 (ja)	2005-11-30	2012-05-23	セイコーエプソン株式会社	発光装置および電子機器
JP4661557B2 (ja)	2005-11-30	2011-03-30	セイコーエプソン株式会社	発光装置および電子機器
KR20070063300A (ko) *	2005-12-14	2007-06-19	삼성전자주식회사	유기 박막 트랜지스터 표시판 및 그 제조 방법
JP5250960B2 (ja) *	2006-01-24	2013-07-31	セイコーエプソン株式会社	発光装置および電子機器
US8193591B2 (en)	2006-04-13	2012-06-05	Freescale Semiconductor, Inc.	Transistor and method with dual layer passivation
JP2010055070A (ja) *	2008-07-30	2010-03-11	Sumitomo Chemical Co Ltd	表示装置および表示装置の製造方法
KR101015850B1 (ko) *	2009-02-09	2011-02-24	삼성모바일디스플레이주식회사	유기 발광 표시 장치 제조 방법
KR102216028B1 (ko) *	2009-07-10	2021-02-16	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 그 제조 방법
KR101889918B1 (ko) *	2010-12-14	2018-09-21	삼성디스플레이 주식회사	유기 발광 디스플레이 장치 및 이의 제조 방법
KR20130025717A (ko)	2011-09-02	2013-03-12	삼성디스플레이 주식회사	유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법
RU2626996C2 (ru) *	2012-02-03	2017-08-02	Конинклейке Филипс Н.В.	Устройство на органических светодиодах и его изготовление
KR101942515B1 (ko) *	2012-05-03	2019-01-28	삼성디스플레이 주식회사	유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법
JP6169005B2 (ja) *	2014-01-17	2017-07-26	株式会社ジャパンディスプレイ	発光素子表示装置
JP6098017B2 (ja) *	2014-02-17	2017-03-22	エバーディスプレイオプトロニクス（シャンハイ）リミテッド	薄膜トランジスタアレイ基板及びその製造方法
CN104022142B (zh) *	2014-06-12	2017-10-17	四川虹视显示技术有限公司	高开口率的顶发射amoled器件与制成方法
CN104022141A (zh) *	2014-06-12	2014-09-03	四川虹视显示技术有限公司	基于nmos晶体管的倒置顶发射amoled器件及生产方法
KR102174998B1 (ko) *	2014-07-10	2020-11-06	엘지디스플레이 주식회사	유기 발광 표시 장치
CN104393017B (zh)	2014-10-31	2017-12-15	京东方科技集团股份有限公司	阵列基板的制作方法、阵列基板及显示装置
CN107871757B (zh) *	2016-09-23	2020-04-14	京东方科技集团股份有限公司	有机发光二极管阵列基板及其制备方法、显示装置
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2003
- 2003-04-29 TW TW092110050A patent/TWI255432B/zh not_active IP Right Cessation
- 2003-04-30 CN CNB031241344A patent/CN100470842C/zh not_active Expired - Lifetime
- 2003-06-03 JP JP2003157754A patent/JP4091481B2/ja not_active Expired - Lifetime

Also Published As

Publication number	Publication date
JP4091481B2 (ja)	2008-05-28
CN100470842C (zh)	2009-03-18
CN1457220A (zh)	2003-11-19
JP2004046154A (ja)	2004-02-12
TW200307893A (en)	2003-12-16

Legal Events

Date	Code	Title	Description
2023-06-11	MK4A	Expiration of patent term of an invention patent

Publication	Publication Date	Title
TWI255432B (en)	2006-05-21	Active matrix organic electroluminescent display device and fabricating method thereof
TWI425634B (zh)	2014-02-01	有機發光顯示裝置及其製造方法
US7550306B2 (en)	2009-06-23	Dual panel-type organic electroluminescent device and method for fabricating the same
CN102544027B (zh)	2016-02-17	半导体器件
KR100484591B1 (ko)	2005-04-20	능동행렬 유기전기발광소자 및 그의 제조 방법
CN104362125B (zh)	2017-10-13	阵列基板及其制作方法、显示装置
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JP4856810B2 (ja)	2012-01-18	Ｏｌｅｄディスプレイの画素素子構造とその製造方法
US6835954B2 (en)	2004-12-28	Active matrix organic electroluminescent display device
TWI590438B (zh)	2017-07-01	有機發光顯示面板及其製造方法
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US20070284595A1 (en)	2007-12-13	Organic light emitting device and method for fabricating the same
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CN102456624A (zh)	2012-05-16	有机电致发光显示器的阵列基板及其制造方法
JP2005078073A (ja)	2005-03-24	有機電界発光表示装置
CN101924120A (zh)	2010-12-22	有机电致发光显示设备及其制造方法
KR101931337B1 (ko)	2019-03-14	삼중 금속층 게이트 요소를 갖는 박막 트랜지스터 기판 제조 방법
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