TWI249273B - Small array contact with precision working range - Google Patents

Abstract

A contact of a connector element arranged in an array of connector elements having desirable mechanical and electrical properties simultaneously, as defined by a robust working range. An array pitch is preferably within a range of about 0.05 mm to about 1.27 mm, and preferably within a range of about 0.05 mm to 1 mm. The contact includes a base portion and an elastically deformable portion that protrudes from a plane containing the base and is configured to provide a working range of about 0.0 mm to about 1.0 mm.

Description

1249273 九、發明說明： 本申請依35 U.S_C· § 120,主張下列同申請中且共讓 渡之專利申請·· Dirk D· Brown等人於2003年12月8日 申請之美國專利申請10/731，669號，名稱為「A Connector for Making contact at Semiconductor Scales」；Dirk D·1249273 IX. INSTRUCTIONS: This application is based on 35 U.S.C. § 120, and claims the following patent application filed in the same application and filed on Dec. 8, 2003. /731,669, entitled "A Connector for Making contact at Semiconductor Scales"; Dirk D·

Brown等人於2004年4月9曰申請之PCT申請 US2004/011074 號，名稱為「Electrical Connector and Method for Making」；以及 Dirk D_ Brown 等人於 2004 年10月8日申請的美國專利申請號i〇/96〇,〇43，名稱為 「Small Array contact With Precision Working Range」。 【發明所屬之技術領域】 本發明大體係關於電連接器，尤其關於用以結合電子 組件之彈性電連接器。 【先前技術】 用來連接如印刷電路板之組件的傳統電連接器係禾 用^賴類之肋純製造。$見方法之—係使用複触 金屬料，其形成後接著被個別***一 汐形成電連接元件的陣列。其他製作電連接器 齊】、束線導電元件、以及小金魏。電黏者 縮小各電 當想要提高裝置性麟，驅使封裝技術朝向PCT Application No. US2004/011074, filed April 29, 2004, to the name of "Electrical Connector and Method for Making"; and U.S. Patent Application No. i filed on Oct. 8, 2004, by Dirk D. 〇/96〇,〇43, the name is “Small Array contact With Precision Working Range”. TECHNICAL FIELD OF THE INVENTION The present invention relates to electrical connectors, and more particularly to resilient electrical connectors for incorporating electronic components. [Prior Art] Conventional electrical connectors for connecting components such as printed circuit boards are manufactured purely using ribs. See the method for the use of a double contact metal which is formed and then individually inserted into an array of electrical connection elements. Other production electrical connectors Qi], beam-line conductive components, and Xiaojin Wei. Electro-adhesives, reduce the power, when you want to improve the device, drive the packaging technology

4SHAW/04001TW/NEO 1249273 ，接（亦=做「接腳（丨ead)」）間的間隔（或節距[pi_)， 因^存在著縮小_連接II元件尺柏需求。同時，每個 封裝件的連接nm直在增加。糊而言，現有積體電 路封裝件可具有1 mm或更小之節距，以及600或更多的 連接。再者，積體電路裝置係設計以於持續增高的頻率操 作。舉例而言，使用在計算、電信通訊、以及網路應用的 ，體電路裝置，可操作在幾十億赫（GHz)之頻率。電子 叙置之操作鮮、封裝財、以及裝置封裝麟腳數，對 ，來測試或連接這些電子裝置的互連⑽帶來嚴厲的要 衣。 2 ，別疋互連系統之機械、電、和可靠度性能準則變得 j嚴苛。翻在高速、小尺寸和大量接贼的積體電路 衣置的屯和機械可靠度規格，會開出上述傳統互連技術無 ，輕易滿足之要求。—般而言，電性能最佳化的傳統連接 為糸統具有不良的機械和可靠度性f，而機械性能最佳化 和改良的可罪度的連接器系統具有不良的電特性。 今曰的互連系統遭遇的特別問題是，欲連接的電子組 件中接腳的不共面性（norvcoplanar丨·ty)。舉例而言，一平 面^裝件t元件的共面性存在卿些元件位在一共同參 考灸何平面時。於魏封裝件巾，導致封裝狀連接器元 件（或接腳）不共陳的因素包含製程差異和基板龜曲 (wa「page)°對安排為一陣列之傳統連接器元件而言，封 裝件中各處的共面性差異可能超過連接ϋ元件之垂直公4SHAW/04001TW/NEO 1249273, the interval (or pitch [pi_) of the connection (also = "pin"), because there is a need to reduce the size of the connector. At the same time, the connection nm of each package is increasing. In terms of paste, the existing integrated circuit package can have a pitch of 1 mm or less and a connection of 600 or more. Furthermore, the integrated circuit device is designed to operate at a continuously increasing frequency. For example, bulk circuit devices used in computing, telecommunications, and network applications can operate at frequencies of several billion GHz. The electronic operation, the packaging, and the number of packaged devices, to test or connect the interconnections of these electronic devices (10) bring severe clothing. 2, Do not worry about the mechanical, electrical, and reliability performance criteria of the interconnect system. Turning on the high-speed, small size and a large number of thieves' integrated circuit clothing and mechanical reliability specifications, will open the above traditional interconnection technology without, easily meet the requirements. In general, the traditional connection that optimizes electrical performance has poor mechanical and reliability properties, while mechanical performance optimization and improved sinister connector systems have poor electrical characteristics. A particular problem encountered with today's interconnect systems is the non-coplanarity of the pins in the electronic components to be connected (norvcoplanar丨·ty). For example, the coplanarity of a planar device t component exists when the components are in a common reference plane. In the Wei package, the factors that cause the package connector components (or pins) to be inconsistent include process variations and substrate torsion (wa"pages. For conventional connector components arranged in an array, the package The difference in coplanarity between the various parts of the area may exceed the vertical number of the connected elements

4SHAW/04001TW/NEO 1249273 差（tolerance)，而導致一些元件中電連接失效。 共面性問題不限於積體電路封裝件，亦4SHAW/04001TW/NEO 1249273 Poor (tolerance), resulting in failure of electrical connections in some components. Coplanarity problems are not limited to integrated circuit packages,

，電路封裝件要附接的印刷電路板中。共面性問題J ^丨於二板上之一區域㈣陣列的基板柵格陣The printed circuit board to which the circuit package is to be attached. Coplanarity problem J ^ 丨 之一 on one of the two boards (four) array of substrate grid array

Hri ypads)，此乃由於％板基板翹曲。 心傳4 PC板中平坦度（flatness)之偏差，為每英时 75至125微米或更多的等級。 、 此外’電連接H_的電路板、職、和其他組件 ί平面性之偏差’常不隨其他尺寸（如陣列間隔和連接哭 縮小而下降。因此’舉例而言，電路板或其他I =、即距的70件’接觸之位置甚至會產生大的垂直偏差。 =接器接_的節距小於約2絲的傳統連接器而言， if距下降:更難生產可彌補此麵共面性偏差，且仍要 ^現可接受電接觸特性（如低電阻和低電感）的彈性接 【實施方式】 ^明特徵之-為—連接器元件之—或更多接觸的 -圍（workmg range)，連接器元件係安排在連接器 車列中，其中陣列間隔（亦稱做節距，意指分隔最接 〜勺相鄰連接器中心的距離）在約0.05mm至約5mm之 =中’且較佳在約aQ5mm至2麵之範圍中。術語「連 益兀件」文中係指可在導電元件間形成導電路徑的任何 4SHAW/04001TW/NE0 1249273 ^體（entity)。每-連接n元件包含—細，其可 複數個接觸部，其中至少—個接觸部在—位^ ζ range of disp|acement)實質上為可彈性地變形。 ^吾「工作範圍」表示一性質或性質群組符合預定 =之耗圍。:^作範圍是可變形接觸部可機械地移開之距 離（位移）範圍，而符合預定性能準則，包含但不限於， 物理特性（如彈性和空間記憶[sp_ mem〇ry])，以及 特性，如電阻、阻抗、電感、電容及/或彈性行為。 抑於-配置中’接觸位於—連接器元件共面陣列之一連 接器讀巾，此連接H元件共面_包含—平面連接哭。 較佳地，每一接觸除了一彈性可變形部外，尚且一美;係 包含導電材料，此彈性可變形部包含導電材料係延$自λ 部，並突出於含有連接器陣列之平面的表面上方。 藉著使用鑛膜（film coating)、微影圖案化、钱刻和 ，形技術，製造可變形彈性部和基部—體成形的一接觸。 發明之許多配置可形成陣列中的小接觸，具有約 =5mm至約5mm範圍的節距，且如文中所示為約 至約127_範圍的節距，而提供傳統科技無法 到的工條圍。本發明之—配置巾，接朗橫向尺寸在 为0.5mm至約i00mm範圍内於另一配置中，如文中所 不，可變形接觸部顯示一適合的工作範圍，約〇 〇mm至 j 1.0mm範圍内。於另一配置中，—單侧接觸之可變形 接觸部正規化（normalized)工作範圍約為〇·2〇至約〇 44 4SHAW/04001TW/NE0 範圍，而雙側接觸則約狀40至約α 對表面上具有接觸。雙侧連 ，遠技且可職於—電路巾。如文情用，術語 正規化工作範圍」為—無因次（dimensjQnless)量，代 f-接觸之工作範圍除以接觸所在之連接器陣列的 節距。 圖1係本發明之-連接器元件中一接觸的性質圖。此 圖緣出-電連接H元件之電阻和所加外力相對接觸位移 ，圖。對給定的應用而言，連接器元件可能需要滿足一特 定阻值，其一般由可容忍電阻之上限界定。此外，對大部 分彈性連接器元件之應用而言，一施加位移應不超過二 值，超過此值彈性接觸部則不表現彈性方式。因此，圖’ 之範例中，一工作範圍可界定為施加位移範圍的絕對值， 此範圍是連接器元件具有低於可容忍電阻的阻值範圍，且 是彈性部對施加位移或力維持彈性反應的範圍。 圖1中，可容忍電阻限制由Rmax代表。如所繪示， 量測的電阻隨接觸位移增加而減少，且在Dmin時，電阻 達到Rmax之值。在更高位移值處，量測的電阻維持低於 Rmax值。因此工作範圍的下限可設在位移值Dmin，超過 時連接器電阻就少於Rmax。 力曲線Forcel在接觸位移高達標為Dplastic之值的 範圍内，顯示可再現的（reproducible)行為。於此線性Hri ypads), this is due to the warpage of the % board substrate. The deviation of the flatness in the heartbeat 4 PC board is a level of 75 to 125 microns or more per inch. In addition, 'electrical connection H_'s board, position, and other components ί plane deviation' often does not fall with other dimensions (such as array spacing and connection crying shrinks. So 'for example, board or other I = The distance between the 70 pieces of the 'contact position will even produce a large vertical deviation. = If the pitch of the connector is less than about 2 wires, the distance of the if is reduced: it is more difficult to produce to compensate for the coplanarity of this face. Sexual deviation, and still need to accept the elastic contact characteristics of electrical contact characteristics (such as low resistance and low inductance) [Embodiment] - characteristic - for - connector components - or more contact - work (workmg range The connector elements are arranged in the connector train, wherein the array spacing (also referred to as the pitch, meaning the distance separating the most adjacent center of the adjacent connector) is between about 0.05 mm and about 5 mm. And preferably in the range of about aQ5mm to 2 faces. The term "continuous element" refers to any 4SHAW/04001TW/NE0 1249273 entity that can form a conductive path between conductive elements. Including - fine, which can be a plurality of contacts, at least one of which Contact portions - bit ^ ζ range of disp | elastically deformable substantially acement). ^ "Working Scope" means that a property or group of properties meets the predetermined = consumption. The range is the range of distance (displacement) at which the deformable contact can be mechanically removed, and meets predetermined performance criteria, including but not limited to, physical characteristics (such as elasticity and spatial memory [sp_ mem〇ry]), and characteristics. Such as resistance, impedance, inductance, capacitance and / or elastic behavior. In the configuration - the contact is located in one of the connector elements coplanar array connector wipes, the connection H elements are coplanar - contain - plane connection cry. Preferably, each contact is in addition to an elastically deformable portion; it comprises a conductive material, and the elastically deformable portion comprises a conductive material extending from the λ portion and protruding from the surface of the plane containing the connector array. Above. A contact between the deformable elastic portion and the base-body is formed by using a film coating, a lithographic patterning, a money engraving, and a shape technique. Many configurations of the invention can form small contacts in the array, have pitches ranging from about = 5 mm to about 5 mm, and as shown herein are pitches ranging from about 127 Å to the extent that conventional techniques are not available. . The arranging towel of the present invention has a transverse dimension ranging from 0.5 mm to about i00 mm in another configuration, as described herein, the deformable contact portion exhibits a suitable working range, from about 〇〇mm to j 1.0 mm. Within the scope. In another configuration, the normalized working range of the deformable contact of the one-sided contact is approximately 〇·2〇 to approximately 444 4SHAW/04001TW/NE0, and the bilateral contact is approximately 40 to approximately α. There is contact on the surface. Double-sided, far-reaching and can work in - circuit towel. For grammatical purposes, the term normalized working range is—dimensjQnless, and the working range of the f-contact is divided by the pitch of the connector array in which the contact is located. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a diagram showing the nature of a contact in a connector component of the present invention. This figure shows the resistance of the H-connected component and the relative contact displacement of the applied external force. For a given application, the connector component may need to meet a specific resistance value, which is generally defined by the upper limit of the tolerable resistance. In addition, for the application of most elastic connector components, an applied displacement should not exceed a value above which the elastic contact portion does not exhibit an elastic manner. Thus, in the example of Figure ', a working range can be defined as the absolute value of the applied displacement range, which is the range of resistance of the connector component that is lower than the tolerable resistance, and is that the elastic portion maintains an elastic response to the applied displacement or force. The scope. In Figure 1, the tolerable resistance limit is represented by Rmax. As shown, the measured resistance decreases as the contact displacement increases, and at Dmin, the resistance reaches the value of Rmax. At higher displacement values, the measured resistance remains below the Rmax value. Therefore, the lower limit of the working range can be set at the displacement value Dmin, and the connector resistance is less than Rmax when it is exceeded. Force Curve Forcel displays reproducible behavior in the range of contact displacements up to the value labeled Dplastic. Linear here

4SHAW/04001TW/NEO 1249273 範圍中，位移或力可施加於一接觸，當外部位移移走時， 此接觸具有可變形接觸部之完全_恢復。如例示，在位 移值超過Dplastie時，增加接觸位移伴隨少量增加或沒 有增加施加力，此表示雛變形（plastie defQrmati〇n) 之開始。因此，接觸經歷超過Dplastic之變形會顯現永 久的變形，當負載移除也無法恢復，因此降低接觸部的 性範圍。 因此，所不範例中，工作範圍上限WR1設在低於4SHAW/04001TW/NEO 1249273 In the range, displacement or force can be applied to a contact that has a full recovery of the deformable contact when the external displacement is removed. As exemplified, when the displacement value exceeds Dplastie, increasing the contact displacement with a small increase or no increase in the applied force indicates the beginning of the plastie defQrmati〇n. Therefore, the deformation of the contact experience beyond Dplastic will exhibit permanent deformation, which cannot be recovered when the load is removed, thus reducing the range of the contact portion. Therefore, in the non-example, the upper limit of the working range WR1 is set lower than

Dplastic點的位移值，以確保外部位移不會導致彈性接觸 部之=可恢復位移。舉例而言，此限制可設在 值之谷限（margin)下的位移值，以確保可靠的接觸 選替地，如圖！例示’可利用施加於接觸的力 ，la_ng f0rce)設定工作範圍之上限d·卜舉例而 吕’對包含f連接基板栅格卩翔和印路板的彈性接觸 ^連接㉝相而言，可汹―最大總夾力。總最大夾力接 者對應連接器陣列每一彈性接觸可用的一最大夾力， Fmax ° 在連接器陣列使用之傳統模锻彈簧技術中（曲線 F〇rCe2>對小於約2刪的節距而言，彈菁硬性(对出謂) 非常地大。因此，引致小的位移需要大的施加力，結果所 需施加力在較㈣位雜_ Fmax。因此，對傳統模锻彈 I而言’在低位移值達到工作範圍之上限驗2。假設傳 統杈鍛弹黃有類似的Dmin，如圖所示，相對於WR1，工作The displacement value of the Dplastic point to ensure that the external displacement does not result in a resilient contact = recoverable displacement. For example, this limit can be set to the displacement value under the margin of the value to ensure reliable contact replacement, as shown! For example, 'the force applied to the contact, la_ng f0rce' can be used to set the upper limit of the working range d·b. For example, L's can be used for the elastic contact of the f-connected substrate grid sonar and the printed circuit board. ―Maximum total clamping force. The total maximum clamping force corresponds to a maximum clamping force available for each resilient contact of the connector array, Fmax ° in the conventional die forging spring technique used in the connector array (curve F〇rCe2> for pitches less than about 2 cuts) In other words, the hardness of the play is very large. Therefore, the small displacement requires a large force, and the force required to be applied is at the (four) position _Fmax. Therefore, for the conventional die forging I The low displacement value reaches the upper limit of the working range. 2 Assume that the traditional upset forging yellow has a similar Dmin, as shown, relative to WR1, working

4SHAW/04001TW/NEO -10- 1249273 範圍WR2大幅減少 圖2顯示根據本發明之一配置，一例 倾樑接觸叫。llln^^ 4配置中’目2之:旋樑接觸形成為-連接ϋ元件共面 Ρ列之一連接器元件（未繪示）之一部分。圖2例示之平 面圖係從垂直(normal)含共面接觸元件之平面的觀點。接 觸200包含一基部202，其包含一金屬材才斗且位於一平面 中’且沿互相正交（orthogonal)的「X」和「γ」軸之尺 ^分別為約〇· 4mm和0. 5刪。彈性可變形部（文後一般亦 稱^彈性部」或「彈黃部」）204 —體成形地和基部2〇2 ，續，且包含相同金屬材料。此配置中，彈性部204包含 單側金屬旋樑，其每一沿此樑之最長方向之實際尺寸為約 1.5inm〇 圖2b描繪圖2沿線A-Α之一剖面，如圖2b中例示， 旋樑204形成一向上曲形，並延伸於包含基部202之平面 上方，相對於垂直於包含基部202之平面的一線，旋樑2〇4 之—末端（distal end) 206位在平面上大約〇· 6mm的高 度Η。從圖2之觀點，在線A-A’之方向，獨立旋樑204 之突出樑長度Lp約為1.16mm。 圖3例示部份形成的單侧旋樑接觸300之一平面圖， 在製程中間階段對應於完全形成的接觸2〇〇 (圖2)。如圖 3b中例示，基部302和樑部304為共面。圖3顯示突出樑4SHAW/04001TW/NEO -10- 1249273 Range WR2 is greatly reduced. Figure 2 shows an example of a beam contact in accordance with one configuration of the present invention. In the configuration of llln^^ 4, the contact of the spheroidal beam is formed as one part of the connector element (not shown) of the ϋ element. The plan view illustrated in Figure 2 is from the perspective of a normal plane containing coplanar contact elements. The contact 200 includes a base portion 202 which includes a metal material and is located in a plane and is along the mutually orthogonal (X) and "γ" axes, respectively, and is approximately 4 mm and 0.5. delete. The elastically deformable portion (hereinafter generally referred to as "elastic portion" or "elastic portion") 204 is formed integrally with the base portion 2, and continues to contain the same metal material. In this configuration, the resilient portion 204 comprises a single-sided metal rotating beam, each of which has an actual dimension along the longest dimension of the beam of about 1.5 inm. Figure 2b depicts a section along line A-Α of Figure 2, as illustrated in Figure 2b, The girder 204 forms an upwardly curved shape and extends above the plane containing the base 202, with respect to a line perpendicular to the plane containing the base 202, the distal end of the girder 2〇4 is positioned on the plane approximately 〇 · 6mm height Η. From the viewpoint of Fig. 2, in the direction of the line A-A', the protruding beam length Lp of the independent rotating beam 204 is about 1.16 mm. Figure 3 illustrates a plan view of a partially formed single-sided girder contact 300 corresponding to a fully formed contact 2 (Fig. 2) in the intermediate stage of the process. As illustrated in Figure 3b, base 302 and beam 304 are coplanar. Figure 3 shows the protruding beam

4SHAW/04001TW/NEO -11- 1249273 長度Lp為1· 5mm，等於沿其長軸之實際樑長度。再次參照 圖2，本發明之一配置中，樑2〇4之形狀、高度H、以及 Lp係由一「成形」製程決定，其中圖3所示，原平面的橫 樑304係變形為嵌於一平面表面中三維本體。此變形製程 賦予圖2和2b中例示的形狀。因此，具有〇· 63mm高度的 1. 5mm旋樑可形成為外部（基）尺寸為約2· 1χ2· 1丽之接 觸。因為接觸200係用習知有效界定次微米尺寸特徵的微 影和蝕刻技術形成，包含接觸200之陣列中的節距，可輕 易設定在僅標稱地(nominally)大於接觸大小的尺寸。此 係因用以形成接觸200的微影和蝕刻技術之次微米公差 (tolerances)小於實際接觸大小甚多。 例示實驗結要 以下小標題提出使用本發明之接觸執行的量測结 果。^驗資料係由設計以偵測負載（以克為單位）、位^ j以密耳[mils]為單位）、和電阻（以歐姆為單位）的簡 軍負載-位移-電阻裝置所量測與收集。 線/在以下範例甲，工作範圍之上限，係對應於對應塑性 變形開始的轉、接觸之位移關、或負載值大於5〇克。 此外，對量測接觸之電阻之範例而言，工作範圍之下 限界定在一位移值，高於此位移值時，每一 牧對位健實質上不_崎;且高^位中移 值日守，電阻變化比低位移值時較不迅速。因此，以下範例 4SHAW/〇4〇〇iTW/NE< -12- 1249273 、、工作範圍之下限由電性量測典型之L形電阻對位移資 料中的一「膝點（knee)」界定（見圖1中點κ)，而非由 一絕對電阻值界定。 最後，除圖9b外，所有以下圖式例示之資料係得自 於厚度約2密耳之接觸。 太之單侧旌楹接觸 +圖4係根據本發明之一範例配置形成的單側旋樑接觸 之电阻和負載對位移圖。測量出圖4的旋樑接觸具有圖2 和2b揭露之接觸200的結構，且形成為節距】· 27麵之連 接器元件陣列的一部分。 ，4之資料代表從一接觸取的1〇〇次循環。每一量測 中’里測裝置於樑部204之表面約〇密耳，而在垂直基部 =2平面的方向上，達到約2〇密耳的位移。對每一量測而 口田透過連接裔元件建立電接觸時，電阻迅速下降。對 大於約5密耳的位移而言，電阻降到約〇· _ω以下，並 維持於此值以下。 n ^ t；所不’在取大位移20密耳時’負載從零右 ，加=4克。從負載—位移資料中明白的是，在標為』 所有量測鱗一類似曲線。遍及⑽次漫 二，移資料的可細生表示旋樑接觸在21 L耳位移範圍中，僅僅顯示彈性行為。4SHAW/04001TW/NEO -11- 1249273 The length Lp is 1·5 mm, which is equal to the actual beam length along its long axis. Referring again to Figure 2, in one configuration of the present invention, the shape, height H, and Lp of the beam 2〇4 are determined by a "forming" process, wherein as shown in Figure 3, the original planar beam 304 is deformed to be embedded in a A three-dimensional body in a planar surface. This deformation process imparts the shape illustrated in Figures 2 and 2b. Therefore, a 1. 5 mm rotating beam having a height of 〇·63 mm can be formed into an external (base) size of about 2·1χ2·1 丽. Because contact 200 is formed using conventional lithography and etching techniques that effectively define sub-micron sized features, the pitch in the array comprising contacts 200 can be easily set to a size that is only nominally larger than the contact size. This is due to the fact that the sub-micron tolerances used to form the lithography and etching techniques of contact 200 are much smaller than the actual contact size. Illustrative Experimental Summary The following subheadings present the measurement results performed using the contact of the present invention. The test data is measured by a simple load-displacement-resistance device designed to detect load (in grams), bit ^j in mils [mils], and resistance (in ohms). With collection. Line / In the following example A, the upper limit of the working range corresponds to the rotation of the corresponding plastic deformation start, the displacement of the contact, or the load value is greater than 5 gram. In addition, for the example of measuring the resistance of the contact, the lower limit of the working range is defined as a displacement value, and above the displacement value, each pastoral alignment is substantially not saki; and the high-value mid-shift value date Shou, the resistance change is less rapid than the low displacement value. Therefore, the following example 4SHAW/〇4〇〇iTW/NE<-12-1249273, the lower limit of the working range is defined by a typical "knee" in the displacement data by the typical L-shaped resistance of the electrical measurement (see The point in Figure 1 is κ), not defined by an absolute resistance value. Finally, with the exception of Figure 9b, all of the information exemplified in the following figures is derived from a contact having a thickness of about 2 mils. Too single side 旌楹 contact + Fig. 4 is a resistance versus load versus displacement diagram of a single sided beam contact formed in accordance with an exemplary configuration of the present invention. The swivel beam contact of Figure 4 was measured to have the structure of the contact 200 disclosed in Figures 2 and 2b and formed as a portion of the array of 27-sided connector elements. The data of 4 represents one cycle from one contact. In each measurement, the surface of the measuring device is about mils on the surface of the beam 204, and in the direction of the vertical base = 2 plane, a displacement of about 2 mils is reached. For each measurement and the electrical contact is established through the connected components, the resistance drops rapidly. For displacements greater than about 5 mils, the electrical resistance drops below about 〇·_ω and remains below this value. n ^ t; when not taking a large displacement of 20 mils, the load is from zero right, plus = 4 grams. It is clear from the load-displacement data that a similar curve is plotted on the scale of all measurements. Throughout (10) times, the fine-grained data of the shifting data indicates that the girder contact is in the 21 L ear displacement range, showing only the elastic behavior.

4SHAW/04001TW/NEO -13- 1249273 圖4之範例中，可界定旋樑接觸的可接受阻值及包含 可接受機械性能之工作範圍。利用〇· 〇4mD之R臟值， 工作關之现可標為F，在大約6密耳位減，在此處 所^量測的R值實質上在Rmax之下。因為負載—位移資料 在南達20密耳量測的位移處，並未指出塑性流動⑽心 flow)的開始，若利用塑性流動的開始作為界定的準則， 工作範圍之上關對應20料之位移限制。選替地，若 利用50克之最大可容許施加負載作為準則，在2〇密耳位 =尚未達到最大值。無論哪瓣形，假設實驗資料描繪高 ，觸位移限制的接觸行為，轉範圍之上限係對應約2〇 铪耳位移。因此，目4之接觸存在著約14密耳之工作範 圍(6+密耳^密耳位_的範圍），圖4之接觸形成在 綠刪5〇松耳：> 來距之陣列上。此所欲工作範圍特性持 ，至少1〇〇次量測猶環，如圖4所示。 里;則传到圖4貧料的接觸所得的工作範圍可以選替地 規化工作範圍表示。再一次重申，正規化工作範圍音 得自給定的接觸之位移鱗以此接觸所在之^ 二解織_言，正規化工作範圍係大 、乃〇4雄、耳）/ (5〇密耳）或〇 28。 性延伸旋楹接舖 接細圖5係應用於圖2b例示之本發明的一範例延伸旋# 尋的負載-位移圖。於此延伸旋樑接觸中，一彈性部形4SHAW/04001TW/NEO -13- 1249273 In the example of Figure 4, the acceptable resistance of the girder contact and the operating range containing acceptable mechanical properties can be defined. Using the R dirty value of 〇· 〇 4mD, the working off can now be labeled F, which is subtracted at approximately 6 mils, where the measured R value is substantially below Rmax. Because the load-displacement data is measured at a displacement of 20 mils in the South, the beginning of the plastic flow (10) heart flow is not indicated. If the beginning of the plastic flow is used as the defined criterion, the upper limit of the working range corresponds to the displacement of the 20 material. limit. Alternatively, if a maximum allowable applied load of 50 grams is used as a criterion, the maximum value is not reached at 2 mils. Regardless of the shape of the petal, assuming that the experimental data depicts a high, touch-displacement-limited contact behavior, the upper limit of the range of rotation corresponds to approximately 2 铪 铪 ear displacement. Thus, there is a working range of about 14 mils (6 + mil ^ mil _ range) for the contact of item 4, and the contact of Fig. 4 is formed on the array of green 〇 5 〇 :: > The characteristics of the desired working range are held at least 1 time, as shown in Figure 4. The scope of work obtained from the contact with the poor materials in Figure 4 can be selected to represent the scope of work. Once again, the normalized working range sounds from the displacement of the given contact to contact the two. The normalized working range is large, Nai 4 male, ear) / (5 mil) Or 〇28. Sexual Extension Rotation Pickup Figure 5 is applied to a load-displacement diagram of an exemplary extended rotation of the present invention illustrated in Figure 2b. In this extended rotating beam contact, an elastic shape

4SHAW/04001TW/NEO -14· 1249273 兩一從採 六微貫質上類似圖2和 距大。圖5量挪之範例接觸係二節 計。延糊_排於n 耐^性設 顯不於圖5之資料係取自、約4〇, _次量 移和減少位移)。明顯地：有=》 性行為。 之位移範圍中，顯示—近乎理想的彈 处* 1::萬次測試循環並維持一可再現彈性行為之 =力’使此接觸適於如測試插座（SGekets)之應用，盆 中-連接器可連接和分離類似次數。再—次重申，傳统^ ，器在如此小節距設計上，並沒有此類的機械财久性。更 確切地說，對輸尺寸之模轉簧連接H ^言，在約30-40 次猶環後，可觀察到負载—位移曲線之_，表示彈簧機 械行為之4；Mh。 頻低損耗之接觸 圖6提供根據本發明之一配置，顯示一範例雙側凸緣 (flanged)接觸結構的平面圖。圖肋為具有與圖6接觸 類似結構之1· W匪節距接觸，描緣dB跡為解之函數 的圖。圖6c係具有根據圖6之接觸結構的接觸之負載和4SHAW/04001TW/NEO -14· 1249273 The two ones are similar to the figure 2 and the distance. Figure 5 shows the sample contact system for the second section. The paste is classified as n. The resistance is not shown in Figure 5. The data is taken from about 4〇, _ times the amount of shift and the displacement is reduced. Obviously: There is = "sexual behavior. In the range of displacement, the display - near-ideal bullet * 1: 1: 10,000 test cycles and maintain a reproducible elastic behavior = force ' makes this contact suitable for applications such as test sockets, basin-connectors Can be connected and separated a similar number of times. Again and again, the traditional ^, in such a small pitch design, there is no such mechanical longevity. More specifically, for the die-transfer spring connection of the size, after about 30-40 cycles, a load-displacement curve of _ can be observed, indicating 4 of the spring mechanical behavior; Mh. Frequency Low Loss Contact Figure 6 provides a plan view showing an exemplary double-sided flanged contact structure in accordance with one configuration of the present invention. The figure rib is a 1·W匪 pitch contact having a structure similar to that of Fig. 6, and the traced dB trace is a function of the solution. Figure 6c is a contact load with a contact structure according to Figure 6 and

4SHAW/04001TW/NEO 15 1249273 電阻相對於位移的關係圖。 如圖6中所示，接觸600包含二個曲彈性部6〇2，延 伸自基板604之一平面。接觸600形成於節距丨 Γ。彈性部602具短的電路徑μ，界定為通過包含 ，觸之連接器時，電流行經彈性部6()2之長度。所示範 例中，電路徑長度為約1.14mm。 * 因為短電路徑長度，鋪_在高頻提供非常低的诎 貝粍/以符合高頻應用的要求。如圖6b例示，在1〇GHz， ^知耗保持在〇· 8之值下，表示即錢_作在非常高頻 率，仍有非常低的損耗。 、 圖6c資料巾’為⑧達約9密耳位移之最大值的電阻 0 (insertion) 隹^ 後，後續負載⑻和卸载（C)曲線靠近地聚 Ξ 磁滞（hyStereSiS)岐負載和卸載循環 [a: ^使用-Rmax值為—1作範圍之下限可表示 =在約2. 5咖位移處，此值之上所有測得R值係於鼬 大約8料之值對應工作範圍位移之上值，此 之上施加力超過5〇克。 一=匕’對圖6形成在1.12咖陣列節距之接觸_而 二Γί作範_5.5料。因此本發明可提供一種 疋㈤達1GGHZ仍具低dB損耗，以及對於112腿4SHAW/04001TW/NEO 15 1249273 Diagram of resistance vs. displacement. As shown in Figure 6, contact 600 includes two curved resilient portions 6〇2 extending from one of the planes of substrate 604. Contact 600 is formed at a pitch 丨 Γ. The resilient portion 602 has a short electrical path μ defined as the length through which the current travels through the resilient portion 6() 2 when the connector is received. In the exemplary embodiment, the electrical path length is about 1.14 mm. * Because of the short electrical path length, the shop _ provides very low 诎 at the high frequency / to meet the requirements of high frequency applications. As illustrated in Fig. 6b, at 1 GHz, the knowing power is kept at a value of 〇·8, indicating that the money is at a very high frequency, and there is still very low loss. Figure 6c The data towel 'is a resistance of 0 to a maximum of 8 mils displacement 0 (insertion) 隹 ^, the subsequent load (8) and unloading (C) curves close to the geothermal hysteresis (hyStereSiS) 岐 load and unload cycle [a: ^ Use -Rmax value -1 for the lower limit of the range can be expressed = at about 2. 5 coffee displacement, all R values measured above this value are based on the value of about 8 materials corresponding to the working range displacement Value, above which the applied force exceeds 5 grams. A = 匕 'for Figure 6 formed in the 1.12 coffee array pitch contact _ and two Γ 作 _ _ 5.5 material. Therefore, the present invention can provide a 疋(5) up to 1GGHZ which still has low dB loss, and for 112 legs

4SHAW/04001TW/NEO -16- 1249273 節=可5料之工作細。對應低電阻值 j ’傳統接觸無法達到這樣的工作範圍，而‘= ^樣低的dB損耗。此範例中’正規化工作範圍為大約2 圖7描緣負載和電阻對位移圖，其屬於 接觸結構基部2的與彈性部2〇4 (圖2) ^體:同口 盾寸且安排於0·5咖節距之陣列。描繪 二個猶_負載和卸載。即使在G. 5mm節距（約等於ΐ9.7 松耳），對應於施加位移給約5密耳和大約13 7爽耳 的接觸’此配置獲得約8. 7料缸作翻，其 ^接受的電阻和可再郷性行為。選替地，可計;之 Ϊ觸的正聽林翻，對—單侧接_言，約等於(8 7 二，.7密耳)或約。.44，而對一雙侧接= 旋樑接觸之廊>fh 圖8例示一單側旋樑接觸安排於1. 27順節距陣列， =圖2和2b揭露之結構的負载-位移資料。此範例中， 「半硬（half—hard)」金屬銅合金，其於量測 @ 8 f ’執行超過18,剛次純和卸載 痛衣。在給疋的移位所需的負載中，觀察到一平滑、漸變、 和= 冉位移（shift)。此行為係因旋樑接觸中金屬材料之4SHAW/04001TW/NEO -16- 1249273 Section = work fine for 5 materials. Corresponding to the low resistance value j ' traditional contact can not reach such a working range, and ‘= ^ like low dB loss. In this example, the 'normalized working range is about 2. Figure 7 shows the load and resistance vs. displacement map, which belongs to the elastic part 2〇4 of the contact structure base 2 (Fig. 2). Body: Same port shield and arranged at 0 · 5 coffee pitch array. Depict two _ load and unload. Even at a G. 5mm pitch (approximately equal to ΐ 9.7 loose ears), corresponding to the applied displacement to a contact of approximately 5 mils and approximately 13 7 cool ears 'this configuration obtains approximately 8.7 cylinders for turning over, which accepts Resistance and reproducible behavior. The elective ground can be counted; the touch is listening to the forest, and the pair is unilaterally connected, which is equal to (8 7 2, .7 mil) or about. .44, and for a pair of side joints = a girder contact gallery > fh Figure 8 illustrates a single side girder contact arrangement at 1.27 cis pitch array, = the load-displacement data of the structure disclosed in Figures 2 and 2b . In this example, a "half-hard" metal copper alloy, which is measured over @8 f ', performs more than 18, just pure and unloading pain coats. A smooth, gradual, and = shift shift is observed in the load required to shift the 疋. This behavior is due to the metal material in the contact of the rotating beam.

工乍硬化，其肇因自負載與卸載，接著導致樑元件較硬 4SHAW/04001TW/NEO -17- 1249273 性性貝。圖8中顯示的此行為知識，容許 根據包έ此接觸之連接器的應用修改接觸。舉例而古，若 需含此接觸之連接器的多次機械錄和卸載，可 猎抑制接觸之熱處理達到更順應的接觸。 ^產遙蟹左超薄三接觸 圖9為根據本發明另—配置，例示三凸緣（彈性 ΐ ，設計以接觸焊料球賴。凸緣902安排為 ^安約m度分隔。在卿範财，接觸 屬，ΙΪΐϋ，之接觸陣列。接觸_包含薄金 厂：、、、、、么耳之厚度。因此，基部904和凸緣902之 厚度約1密耳。 ^ 〇琢yuzi 斜率声干=載卸載播％。圖9b之負載-位移曲線的 菩诗、二: 凸緣接觸的—順應的彈簧「常數」。藉 結構的接觸之金屬層（或 ^二，之彈性部的順應性—Η_)， 對、錢的接觸大小，可負擔更大位移（即工作範圍）。 玉作範圍之 圍的立移或外力為工作範 ^移耗圍顯不，其中電接觸之電阻在可接受範圍。已顯干 對具0.5至l.27mm㈣之_巾的_=_=Work hardening, which is caused by self-loading and unloading, and then causes the beam components to be harder. 4SHAW/04001TW/NEO -17-1249273 Sexuality. This behavioral knowledge, shown in Figure 8, allows the contact to be modified based on the application of the connector that covers the contact. For example, if multiple mechanical recordings and unloading of the connector containing the contact are required, the heat treatment of the contact can be suppressed to achieve a more compliant contact. The left ultra-thin three-contact of the remote crab is shown in FIG. 9 as a further configuration, exemplifying a three-flange (elastic ΐ, designed to contact the solder ball. The flange 902 is arranged to be separated by m degrees. Contact genus, ΙΪΐϋ, contact array. Contact _ contains the thickness of the thin gold factory:,,,,, and ear. Therefore, the thickness of the base 904 and the flange 902 is about 1 mil. ^ 〇琢yuzi slope sound dry = Load unloading %. Figure 9b load-displacement curve of Pu Shi, II: Flange contact - compliant spring "constant". Metal layer by contact of the structure (or ^ 2, the compliance of the elastic part - Η _ ), the size of the contact with the money, can bear a larger displacement (ie, the working range). The vertical or external force of the circumference of the jade is the working range, and the electrical contact resistance is within the acceptable range. Has been dried for _=_= with a towel of 0.5 to 1.27 mm (four)

4SHAW/04001TW/NEO -18- 的大工作範圍。在圖6b之範例中，例示雙凸 阿頻的低dB損耗。因此，於本發明之配置中， 圍可包含-接觸位移範圍，藉其同時滿足數個不同 二^例如，於圖6長中：彈性反應、低電阻、可容忍 軏圍中之施加力、以及高頻之低損耗）。 圖jO例示形成—接觸陣列之製程中，本發明之範例 Ϊ導^臟中，製造—導電層（或片）。視片厚度而 ί一形成為獨立或形成板上。-範例中，選 =合=^金屬片’如獨鋼鍍；♦金之多層金 屬片。更具體地，導電合屬 # (CuBe)鑛上益電（el υ έ弟—層含有小粒銅鍵 ( eCtr°less)鎳—金（Ni/Au)，以提 tiiii夕可提供所欲彈性給一彈性接觸部。導電 _，為—支撐結構，其於額外步驟中可被電 錢以付到所欲電及/或彈性行為。選替地，導電金屬包 電層形成之接觸的 供不氧化表面。適當選擇材料可提’導 工作範圍 於選用的步驟1〇04中，勃 舉例而言，某此全屬材粗办電盃屬片之熱處理。 硬態。 熱處理將材料自半硬態轉化為 ^驟麵中，接著應用微 片。乾膜可用在範圍1至2〇 脈料至屬 ϊ 1 〇也耳之較大特徵尺寸： U阻可用在小於1密耳㈣徵尺寸。Large working range of 4SHAW/04001TW/NEO -18-. In the example of Figure 6b, the low dB loss of the biconvex A-frequency is illustrated. Therefore, in the configuration of the present invention, the circumference may include a range of contact displacements, which simultaneously satisfy a plurality of different twos, for example, in the length of FIG. 6: an elastic reaction, a low resistance, an applied force in a tolerable circumference, and Low frequency loss of high frequency). Figure jO illustrates a process for forming a contact array in which an example of the present invention is used to fabricate a conductive layer (or sheet). The thickness of the web is formed to be independent or formed on the board. - In the example, select ===^metal piece' such as steel plating; ♦ gold multi-layer metal piece. More specifically, the conductive genus # (CuBe) mines on the electricity (el υ έ — - layer contains small copper bonds (eCtr °less) nickel - gold (Ni / Au), in order to provide the desired flexibility An elastic contact portion, which is a support structure, which can be charged by an electric money to perform desired electrical and/or elastic behavior in an additional step. Alternatively, the conductive metal cladding layer is contacted for non-oxidation. Surface. Appropriate selection of materials can be used to introduce the working range in the selected step 1〇04. For example, in this case, the heat treatment of a certain thick metal cup is hard. The heat treatment transforms the material from a semi-hard state. In the face, the microchip is applied. The dry film can be used in the range of 1 to 2 〇 至 to the ϊ 1 〇 also the larger feature size of the ear: U resistance can be used in less than 1 mil (four) sign size.

4SHAW/04001TW/NEO -19- 1249273 光阻ί驟：L中，根據接觸之預定設計圖案化微影敏感 先阻膑。八體而言’紫外光透過包含預定設計之遮罩 =曝光此紐膜，其錢影絲轉定接㈣徵在光阻 =欲，的部分未受遮罩賴。使賴髓程界定接觸 二於打lpiprinting)具有精細的解析度， 衣私。一範例中，遮罩含有特徵陣列，每一 特祕據所欲節距間隔。較佳地，節距為L 5刪或更小。 列此m10中，於特別為此導電材料選擇的溶液中韻 列化與以L彳選擇之每—侧材料—般具有特定的敍 ί敢佳侧特性，如_速率（.即此溶液實施 錄）°侧劑之選擇亦影響其他特性，如 接觸特徵之侧壁外形（pr〇me)，亦即，從剖面 =的_輪廓(contour)的形狀。蝕刻劑的範例 chlor / ?UPriC Chl〇ride) ' (ferric 在钊氫氧化硫（SUlfUI*iG hydlOXide)。蝕刻後， Γ Ϊΐ ί中移除光阻層之剩餘部分，留下片中的侧特 主刻特徵可包含特徵彈性部，如圖3b的樑部30[ -点ΐί 1G12中，含接觸特徵之随化導電金屬片經歷 成开^Γ私’例如使用一批次（batch)成形工具。批次 例可依待成形接觸陣列之所欲節距加以設計。一範 安姑H欠成形工具包含複數個滾珠軸承（bal 1 bear ings) 成_形式，難地放置於-讀表面巾的開口陣 4SHAW/04001TW/NE0 -20- 1249273 列。滾珠軸承可為不同尺 藉此給予同-片上的接觸不同寺徵， (curvature)用以將接觸 ^、纟’袞珠軸承之曲率 平面。藉由翻细紅具於此緣）推離導電片之 產生所欲雜接觸部。、、，胃之*緣為三維，以 步驟1014中，成开u & 攻开/接觸片應用於一基板 平面絕緣材料，使得彈拇 車乂仏為 面 。 之仔洋1 2接觸部突出於平面基板之表 (singulation)製程，形 ’使得這些接觸彼此電隔 步驟1016中，應用單一化 成一陣列的獨立（分離的）接觸 離。 上。支標層1102可為沉積的介電層，如氧化物或氮化物 層旋塗（spin-on)介電質、聚合物、或任何其他適合 的可蝕刻材料。支撐層11〇2可由幾個不同製程沉積，包4SHAW/04001TW/NEO -19- 1249273 Photoresist: In L, the lithography is sensitive according to the predetermined design of the contact. In the case of the eight-body, the ultraviolet light passes through the mask containing the predetermined design. = The film is exposed, and the shadow of the wire is transferred to the (four) sign in the photoresist = the part that is not covered by the mask. Make the remedy of the remedy of the two-way lpiprinting) with a fine resolution, clothing private. In one example, the mask contains an array of features, each of which is spaced apart by a desired pitch. Preferably, the pitch is L 5 or smaller. In this m10, in the solution selected especially for the conductive material, the rhythm and the material selected by L彳 have a specific characteristic, such as the _ rate (. The choice of side agents also affects other characteristics, such as the sidewall profile of the contact features, that is, the shape of the contour from the profile =. An example of an etchant chlor / ?UPriC Chl〇ride) ' (ferric in sulphuric acid sulphur (SUlfUI*iG hydlOXide). After etching, 剩余 ί ί remove the rest of the photoresist layer, leaving the side of the film The main engraved feature may include a feature elastic portion, such as the beam portion 30 [-point ΐ ί 1G12 of Fig. 3b, in which the conformal conductive metal sheet containing the contact features is subjected to a 'batch' forming tool, for example. The batch example can be designed according to the desired pitch of the shaped contact array. A Van Angu H undercut tool contains a plurality of ball bearings (bal 1 bear ings) in a form that is difficult to place in the opening of the read surface towel. Array 4SHAW/04001TW/NE0 -20- 1249273. Ball bearings can be used for different sizes to give the same on-chip contact. Curvature is used to contact the curvature plane of the bearing. The reddish red edge is pushed away from the conductive sheet to produce the desired miscellaneous contact. And, the stomach edge is three-dimensional, in step 1014, the open u & tapping/contact piece is applied to a substrate planar insulating material, so that the thumb rut is made. The contact portion of the Aberdeen Ocean 1 2 protrudes from the singulation process of the planar substrate, such that the contacts are electrically isolated from each other. In step 1016, a separate (separate) contact that is singulated into an array is applied. on. The via layer 1102 can be a deposited dielectric layer such as an oxide or nitride layer spin-on dielectric, a polymer, or any other suitable etchable material. The support layer 11〇2 can be deposited by several different processes, including

4SHAW/04001TW/NEO -21 - 14SHAW/04001TW/NEO -21 - 1

Ua至llh例不根據本發明另一配 範例製程步驟，舉例而士，w 0方ou 取鋼之 2 回η 夕邓羋例而己，如圖2至2b的接觸200。參照 圖a，提供-基板11〇〇，且接觸元件將位於其上。基板 1100可為例如秒晶圓或陶莞晶圓，且可包含一介電層形成 其上（圖11a中未示）。例如為藍寶石上石夕（s〇s)、玻璃 上矽（S0G)、硼磷四乙基正矽酸鹽（BpTE〇s)、或四乙基 正石夕酸鹽（TE0S)之介電層可形成於基板謂上，供隔 離接觸元件與基板⑽。一支撐層11G2形成在基板議 1249273 含化學氣相沉積、電漿氣相沉積（plasma vap〇r deposition，PVD)、旋轉塗佈製程、或當基板η⑽未覆 有介電層或導電黏著層時，支撐層可利用半導體製 程常使用的氧化製程成長。 支撐層1102沉積後，一遮罩層11〇4形成於支撐層 1102之頂表面上。遮罩層11〇4結合傳統微影製程，使^ 遮罩層1104界定一圖案於支撐層11〇2上。在遮罩層打印 與顯影後（圖lib)，包含區域1104a至1104c之遮罩圖案 形成在支撐層1102之表面上，界定支撐層11()2受保護免 於後續蝕刻之區域。 乂苓照圖llc，利用區域刪a至ll〇4c作為遮罩，執 行非等向侧製程。非等向射彳製程的結果是，移除未被 圖案化遮罩層覆蓋的支撐層11G2。因此，形成支撐區域 ^〇2a至1102=接著移除包含區域蘭a至i驗的遮 罩圖案’以暴露支撐區域（圖nd)。 支撐區域1102a至i102c接著經歷等 實質_的勘i速率，在垂直和水=向ί 因此，等向烟之結果是，削圓支撐區域 包含:吏用SF :頁角，如圖116所示。等向蝕刻製程可 .4，Ά 3、CF4、或其他蝕刻介電材料常用的習 二刻製程。選替地，等向侧製程為濕 〆 列使用緩衝氧化物钱刻（B0E)之濕餘刻製The Ua to llh examples are not according to another exemplary process step of the present invention. For example, the w 0 square ou takes the steel back to the η, and the contact 200 of FIGS. 2 to 2b. Referring to Figure a, a substrate 11 is provided and the contact elements will be placed thereon. The substrate 1100 can be, for example, a second wafer or a ceramic wafer, and can include a dielectric layer formed thereon (not shown in Figure 11a). For example, a dielectric layer of sapphire (s〇s), glass sputum (S0G), borophosphorus tetraethyl orthosilicate (BpTE〇s), or tetraethyl chloroformate (TE0S) It can be formed on the substrate to isolate the contact element from the substrate (10). A support layer 11G2 is formed on the substrate 1282937 containing chemical vapor deposition, plasma vap〇r deposition (PVD), spin coating process, or when the substrate η (10) is not covered with a dielectric layer or a conductive adhesive layer. The support layer can be grown using an oxidation process commonly used in semiconductor processes. After the support layer 1102 is deposited, a mask layer 11〇4 is formed on the top surface of the support layer 1102. The mask layer 11〇4 incorporates a conventional lithography process such that the mask layer 1104 defines a pattern on the support layer 11〇2. After the mask layer is printed and developed (Fig. lib), a mask pattern comprising regions 1104a through 1104c is formed on the surface of the support layer 1102 defining the region where the support layer 11(2) is protected from subsequent etching. Referring to the graph, the non-isotropic side process is performed by using the area a to ll 〇 4c as a mask. As a result of the non-isotropic firing process, the support layer 11G2 that is not covered by the patterned mask layer is removed. Therefore, the support regions ^ 2a to 1102 are formed = then the mask pattern ' containing the region blue a to i is removed to expose the support region (Fig. nd). The support regions 1102a through i102c then experience an iso-ratio, in vertical and water = ί. Thus, the result of the isotropic smoke is that the rounded support region comprises: SF: page corner, as shown in FIG. The isotropic etching process can be used for .4, Ά 3, CF4, or other common etching processes for etching dielectric materials. Alternatively, the isotropic process is wet and wet using buffered oxide (B0E)

4SHAW/04001T W/NEO -22- 1249273 程。 參照圖Ilf，-金屬層1106形成於基板·之 和支狐域1102a至11G2c之表面上。金屬層测 銅層、銅合金層或多層金屬沉積，如鎢鍍以銅_鎳—金 (Cu/Ni/Au)。較佳地，接觸元件係利用以下形成：_小粒 銅-鈹合金接著鍍上無電鎳-金，以提供不氧化表面。金屬 層1106可以化學氣相沉積製程、魏、驗、電聚氣相 沉積’或使用其他傳統金屬膜沉積技術沉積。利 影製程’ 料層且_化為鱗區域丨驗^ 1108c。遮罩區域1廳至⑽c界定金屬層應受 免於後續蝕刻之區域。 、圖11F中的結構接著經歷蝕刻製程，以移除未被遮罩 區域1108a至ll〇8c覆蓋的金屬層之部分。結果，形成金 屬口(U106a至ll〇6c，如圖叫所示。每一金屬部11〇如 至1106c包含一基部形成在基板11〇〇上，以及一曲彈性 部形成在_的支撐區域（11Q2a至丨耻）上。因此， 當從剖面看，每一金屬部之曲彈性部採取和 實質上相_雜，如於基板議的表社。成 %圖11H步驟中，移除支撐區域1騰至i，例如4SHAW/04001T W/NEO -22- 1249273. Referring to Figure 11f, a metal layer 1106 is formed on the surface of the substrate and the foxhole domains 1102a to 11G2c. The metal layer is a copper layer, a copper alloy layer or a multilayer metal deposit such as tungsten-plated copper-nickel-gold (Cu/Ni/Au). Preferably, the contact elements are formed by: _ small-grain copper-rhenium alloy followed by electroless nickel-gold plating to provide a non-oxidized surface. The metal layer 1106 can be deposited by chemical vapor deposition processes, Wei, inspection, electropolymerization, or by other conventional metal film deposition techniques. The shadow process is layered and _ into a scale area test ^ 1108c. The mask areas 1 to (10)c define areas where the metal layer should be protected from subsequent etching. The structure in Fig. 11F is then subjected to an etching process to remove portions of the metal layer that are not covered by the mask regions 1108a through 110b. As a result, metal ports (U106a to ll6c) are formed as shown in the drawing. Each metal portion 11 such as to 1106c includes a base formed on the substrate 11A, and a curved elastic portion formed at the support region of ( 11Q2a to shame.) Therefore, when viewed from the cross section, the elastic portion of each metal portion is taken to be substantially the same as that of the substrate. As shown in Figure 11H, the support region 1 is removed. Teng to i, for example

向電聚侧、或其他侧製程。若 使用乳化層形成，可使用緩衝氧化物侧劑移除支 牙品知、、、、口果，形成獨立（free standing)彈性接觸部 4SHAW/04001TW/NEO -23- 1249273 1110a至iii〇c於基板丨丨㈨上。 、本發明配置提出的前述揭露為例示和說明之目的。其 =欲為窮舉（exhaustive)或限制發明為所揭露確切开; ，。文中所述配置之許多變化和修改，鑒於上述揭露，對 熟此技藝者是_的。發明之範脅只由所附申請專利 及其均等物界定。 ^ ，例而言’圖4至9中的資料係取自陣列間隔範圍約 U· 5-1. 27咖的接觸。然而，亦考慮其他小到包含陣列節距 約〇.〇5咖的接觸陣列配置。因為本發明配置中使 影製程可鎌至少州65-9G奈米辭面尺寸，也考慮= 毛月之配置具有類似橫向（平面中）尺寸的接觸元件'。此 用以形成基部和雜接觸部的金屬膜之膜厚可減到至 ^約10奈米’而仍給予由之形成的接觸低電阻。最後， 三維本體（bodies)之規則陣列可製造為1〇微米那麼小， 以形成一模板（template)，讓類似整體尺寸的三 接觸部可由之製造。#於上述，對財絲、微米、次微 米陣列_距製造的電接觸而言’可實現大卫作範圍和大正 規化工作範圍。 本發明另—配置中，具提紅作範圍的—彈性接觸包 έ 一彈性接觸部，此彈性接觸部沿接觸之一平面中之接觸 部的長方向，具有漸細（tapered)的形狀。彈性部靠近 基部的區域具有第-寬度’ 末端區域具有第二寬度，Process to the electropolymer side or other side. If an emulsion layer is formed, the buffered oxide side agent can be used to remove the dentures, and, and the fruit, to form a free standing elastic contact portion 4SHAW/04001TW/NEO -23-1249273 1110a to iii〇c. On the substrate 九 (9). The foregoing disclosure of the present invention has been presented for purposes of illustration and description. It is intended to be exhaustive (exhaustive) or to limit the invention to the exact disclosure; Many variations and modifications of the configurations described herein are apparent to those skilled in the art in view of the above disclosure. The invention is defined only by the accompanying patent application and its equivalents. ^ , For example, the data in Figures 4 through 9 are taken from the array spacing of about U 5-1. 27 coffee contacts. However, other contact array configurations that are small enough to contain an array pitch of approximately 〇. Since the shadowing process of the present invention can be at least 65-9G nanometer face size, it is also considered that the configuration of the month is similar to the horizontal (in-plane) size of the contact element'. The film thickness of the metal film for forming the base and the impurity contact portion can be reduced to about 10 nm' while still giving the contact low resistance formed therefrom. Finally, a regular array of three-dimensional bodies can be fabricated as small as 1 micron to form a template from which three contacts of similar overall dimensions can be fabricated. In the above, for the financial wire, micron, sub-micro arrays _ from the electrical contact made to achieve 'David' range and large regular working range. In another configuration of the present invention, the elastic contact portion has a red-colored contact portion, and the elastic contact portion has a tapered shape along a longitudinal direction of the contact portion in one of the planes of the contact. The region of the elastic portion near the base has a first-width end region having a second width,

4SHAW/04001TW/NEO -24- 1249273 f 7寬度實質上較第—寬度為窄。雜接觸部藉包含較窄 的末端，可增加接觸的順應性。 彈柯另—配置中，—彈性細包含—彈性接觸部， 蜀。卩沿接觸部之長方向，具有漸細的厚度。 „區域具有第一厚度，而一末端區域:有= 第厚度只貝上較第一厚度為窄，以增加接觸的順應 本發明另 樑开;配置令’一彈性接觸包含具一片(_) 此區域位部。片樑形狀包含一雜樑之片區域， =部和基部’其提供一平‘和:突==部間電連 ❹^外i雖然於以上討論之範例接觸中，—基部環繞- =2,恤纖， 續性 再者，本發述代表配 ，方法及象轉 製程不依賴文中提出特定順序之步_程度4SHAW/04001TW/NEO -24- 1249273 f 7 The width is substantially narrower than the first - width. Miscellaneous contacts contain narrower ends that increase contact compliance. In the other part of the configuration, the elastic part contains elastic contact parts. The crucible has a tapered thickness along the length of the contact portion. „The area has a first thickness, and one end area: there is = the first thickness is only narrower than the first thickness, to increase the contact compliance of the invention, the other beam is opened; the configuration makes one elastic contact contain one piece (_) The region of the beam. The shape of the beam includes a region of the beam, the = portion and the base 'which provides a flat' and: the protrusion == the electrical connection between the two parts. Although in the example contact discussed above, the base surrounds - =2, shirt, continuation, this statement, the method and the image conversion process do not depend on the specific order in the text _ degree

及/或事=，韻本發明之方法 的申5月專利乾圍不應限於依所寫順序之步驟的 4SHAW/04001TW/NEO -25- 1249273And / or things =, the method of the invention of the invention of the May patent should not be limited to the steps in the order of writing 4SHAW/04001TW/NEO -25-1249273

執行，且熟此技藝者可輕易理解順序可變化，而仍 明之精神與範疇内。 X 【圖式簡單說明】 圖1係為本發明之-連接器元件中，質圖。 觸示意圖，顯示—例示完全形成的單侧旋樑接 觸200的平面圖。 圖2b係一示意圖’描繪圖2之接觸沿線a_a，之剖面。 圖.3係一示意圖，例示在製程中間階段之 旋樑接觸。 μ i早側 圖3b係一示意圖，例示圖3之接觸的立體圖。 圖’4係一例示的單側旋樑接觸之電阻和負載對位移 圖。 圖5係應麟—例示延伸的旋樑接_負載·位移圖。 圖6係一不思圖，為一例示雙側凸緣接觸的平面圖。 圖6b為具有根據圖6之接觸結構及⑺咖 距的接觸，dB損耗為頻率之函數的圖式。 為具有根據圖6之接觸結構的雙側凸緣接觸， 負載和電阻對位移的圖。 狄圖7描繪負載和電阻對位移圖，其為安排於〇·5_ 即距之陣列，且具有圖2接麟構雜之接觸。Execution, and those skilled in the art can easily understand that the order can be changed while still being within the spirit and scope. X [Simplified description of the drawings] Fig. 1 is a texture diagram of a connector component of the present invention. Touch Diagram, Display - Illustrates a plan view of a fully formed single-sided rotating beam contact 200. Figure 2b is a schematic view depicting the contact of Figure 2 along line a-a. Fig. 3 is a schematic diagram illustrating the contact of the girder in the intermediate stage of the process. μ i early side Fig. 3b is a schematic view showing a perspective view of the contact of Fig. 3. Figure '4 is an example of the resistance and load versus displacement diagram for a single side gyro contact. Fig. 5 is a diagram showing the extension of the rotating beam connection _ load and displacement diagram. Fig. 6 is a plan view showing an example of a double-sided flange contact. Figure 6b is a diagram of the contact with the contact structure according to Figure 6 and (7) the coffee pitch as a function of frequency. A plot of load and resistance versus displacement for a double-sided flange contact having a contact structure according to FIG. Ditu 7 depicts the load and resistance versus displacement maps, which are arranged in an array of 〇·5_ ie distances, and have the contact of Figure 2.

Jit載2資料圖，其為安排於127_節距陣 列之+硬接觸，且具有圖2和2b揭露之結構。 圖9係-示意圖，顯示設計用以接觸焊料球之 多凸緣接觸。The Jit contains 2 data maps, which are arranged in hard contact with the 127_pitch array, and have the structure disclosed in Figures 2 and 2b. Figure 9 is a schematic view showing the multi-flange contact designed to contact the solder balls.

4SHAW/04001TW/NEO -26- 1249273 圖9b係負载_位移圖 卸載循環。 ，例示圖9之接觸的三個負載- 圖10例示根據本發明 程涉及的範例步驟。 之一配置，形成陣列接觸之製 接觸====明之另-配置’形成陣列 【主要元件符號說明】 200接觸 202基部 204彈性可變形部 206遠端 300接觸 302基部 304樑部 600接觸 602彈性部 604平面 900接觸 901焊料球 902凸緣 1100基板 1102支撐層 1102a，1102b，1102c 支撐區域 1104 遮罩層 1104a，1104b，1104c 區域 1106 金屬層 1106a, 1106b，1106c 金屬部 1108a，1108b，1108c 遮罩區域 1110a，1110b，1110c獨立彈性接觸部4SHAW/04001TW/NEO -26- 1249273 Figure 9b is the load_displacement diagram Unloading cycle. The three loads illustrating the contact of Figure 9 - Figure 10 illustrates exemplary steps involved in the process in accordance with the present invention. One configuration, forming the contact of the array contact ==== the other is the same - the configuration 'forms the array' [main element symbol description] 200 contact 202 base 204 elastic deformable portion 206 distal end 300 contact 302 base 304 beam portion 600 contact 602 elastic Port 604 plane 900 contacts 901 solder balls 902 flange 1100 substrate 1102 support layer 1102a, 1102b, 1102c support region 1104 mask layer 1104a, 1104b, 1104c region 1106 metal layer 1106a, 1106b, 1106c metal portion 1108a, 1108b, 1108c mask Area 1110a, 1110b, 1110c independent elastic contact

4SHAW/04001TW/NEO -27-4SHAW/04001TW/NEO -27-

Claims (1)

1249273 十、申請專利範圍： 1· 一種於一接觸陣列中之電接觸，該陣列具一節距小於約 1· 5 mm，該接觸之設置係滿足包含一工作範圍之特定設計 要求，該接觸之製造步驟包含：微影圖案化及蝕刻一導電 層、電鍍導電材料於該圖案化導電層上、以及實施一成形 製程於該圖案化導電層上，以形成一彈性接觸部。 2· 一種於一電連接器中之接觸，包含： 一基部實質上位於包含一接觸陣列之一平面中，該陣 列具一節距於約〇· 〇5刪至約5. 〇mm之範圍中；以及 一彈性部與該基部為一整體，突出於該基部之該平面 上，且供產生一工作範圍約〇·〇至約1〇麵。 3·如請求項2所述之接觸，該工作範圍之一上限對應於 50克之一施加力。 ^如印求項2所述之接觸，該工作範圍特性之一下限由一 冤對位移轉巾的-膝輯決定。 如明求項2所述之接觸，該工作範圍之一下限對應於一 ’於該位移以上，該接觸之一量測電阻小於15ιηΩ。 請求項2所述之接觸，該工作範®包含—範圍，其中 々、達約1’時，—接觸仙損耗約小於卜 4SHAW/04001TW/NEO -28- 1249273 該·科—接㈣路徑長度 8. t請求項2所述之接觸，該接觸之製造步驟包含： 提供一基板，供形成該接觸於其上； f成-導電層於該基板上，該導電層提供一第一表面； 侧該導電層，以界定該基部和該彈性部；以及 —縛性部之至少—部份，該彈性部配置為從該第 。、面犬出，以於該基部和該彈性部間提供一可變形的導 電路徑。 9· 一種一連接器陣列之旋樑接觸，包含： 一基部實質上位於包含一接觸陣列之一平面中，該陣 列具有一節距於約〇.〇5mm至大約127臟之範圍中；以及 一彈性部包含一或更多旋樑，與該基部為一整體，且 以一向上曲形突出於該基部之該平面上，該旋樑接觸提供 一工作範圍為約0·0刪至約1〇腿。 =·如請求項9所述之旋樑接觸，該旋樑接觸於2〇之位移 範圍中，承受超過100次負載-卸載循環而不改變彈性行為。 Π·如請求項9所述之旋樑接觸，該旋樑接觸之製造步驟包 含： 提供一基板，供形成該旋樑接觸於其上； 形成一導電層於該基板上，該導電層提供一第一表面； 4SHAW/04001TW/NEO -29- 1249273 電路徑 蝕刻該導電層，以界定該基部和該彈性部；以及 $轉性部之至少—部份，該彈性部配置為從該第 : '大出，以於該基部與該彈性部間提供—可變形的導 12·種一連接器陣列之多凸緣焊料球接觸，包含·· ，邛只貝上位於包含一接觸陣列之一平面中，該 列具一=距於約0·05刪至約127咖之範圍中，·以及 兮其二彈性部包含複數個凸緣，與該基部為—整體，且從 雜敎-實質上圓_緣突出於該基部之該平面上 供接合-焊料球，該接觸提供—位移約狀_至約1· 〇聰。 】9 θ $項13所述之多凸緣焊料球接觸，該節距約為 1· 27麵’而該接觸為約5密耳之—位移的彈性可變形。 所述之多凸_球細，多凸緣焊料球 提供-基板’供形成該多凸緣焊料球接觸於且上； 形成—導電層於該基板上，該導電層提供一第一表面； 蝕刻該導電層’以界定該基部和該彈性部；以及 =該彈性部之至少—部份，該彈性部配置為從該第 '大出’以於該基部㈣彈性和提供一可變形的導 4SHAW/04001TW/NEO -30- 1249273 電路徑。 16· —種於一電連接器中的接觸，包含·· -基部實質上位於包含—接辦狀—平面中， 列具一節距於約0· 05mm至約127^之範圍中；以及 -彈性部與該基部為—整體，突出於絲部之該平面 上，並供產生一正規化工作範圍約為〇·丨至約〇.44。 Π·如請求工員16所述之接觸，一位移之一上限用以界定該 正規化工作範圍對應於5〇克之一施加力。 人 18. 如請求項16所述之接觸，一位移之一下限用以界定該 正規化工作範圍’由-電阻對位移曲線巾的—膝點所決定。 19. 如請求項16所述之接觸’ 一位移之一下限用以界定該 f規化工作顧’對應於-位移，該位移以上該接觸之一 1測電阻小於大約15ηιΩ。 2〇.—種在一基板之相對側具有接觸之一電連接器中的雔 側接觸，每一接觸包含： 又 一基部實質上位於包含一接觸陣列之一平面中，該陣 列具一節距於約0.05麵至約1.27mm之範圍中；以及 一彈性部與該基部為一整體，突出於該基部之該平面 上，該雙侧接觸供產生一正規化工作範圍約為Q 2 〇· 88。 · 4SHAW/04001TW/NEO -31- 1249273 21•—權於一接觸陣列中製造電接觸的方法，包含·· 設計〆接觸之一尺寸和形狀，該接觸包含根據特定設 計要求之一彈性部，該設計要求包含一陣列節距小於 1. 5mm以及一所欲工作範圍; 、”、 使用根據該接觸經設計的形狀與尺寸之—微影 界定該接觸； ^ 使用該微影圖案，侧一導電層，以產生一接觸結構· 欲工產生—雜料設相達到該所 所電鑛該接觸結構，以給予滿足蘭定設計要求之性 質；以及 4SHAW/04001TW/NEO -32-1249273 X. Patent application scope: 1. An electrical contact in a contact array having a pitch of less than about 1.5 mm. The contact is set to meet specific design requirements including a working range, and the contact is manufactured. The method includes: patterning and etching a conductive layer, plating a conductive material on the patterned conductive layer, and performing a forming process on the patterned conductive layer to form an elastic contact portion. The contact in the electrical connector, comprising: a base substantially in a plane comprising a contact array, the array having a pitch of about 〇·〇5 deleted to a range of about 5. 〇mm; And an elastic portion integral with the base, protruding from the plane of the base, and for generating a working range of about 〇·〇 to about 1〇. 3. The contact as described in claim 2, the upper limit of one of the working ranges corresponds to one of 50 grams of applied force. ^ As for the contact described in claim 2, the lower limit of one of the working range characteristics is determined by a 膝-to-knee of the displacement sneaker. As described in claim 2, a lower limit of the working range corresponds to a displacement above the displacement, and a measurement resistance of the contact is less than 15 ιηΩ. In the contact described in claim 2, the working range includes the range, where 々, up to about 1', the contact loss is less than about 4SHAW/04001TW/NEO -28- 1249273. The section is connected to the (four) path length 8 The contact described in claim 2, the manufacturing step of the contacting comprises: providing a substrate for forming the contact thereon; and forming a conductive layer on the substrate, the conductive layer providing a first surface; a conductive layer defining the base portion and the elastic portion; and at least a portion of the binding portion, the elastic portion being disposed from the first portion. And the face dog is provided to provide a deformable conductive path between the base and the elastic portion. 9. A spin beam contact of a connector array, comprising: a base substantially in a plane containing a contact array, the array having a pitch in a range from about 5 mm to about 127 dirty; and an elastic The portion includes one or more rotating beams, integral with the base, and protrudes in an upward curved shape on the plane of the base, the rotating beam contact provides a working range of about 0·0 to about 1 leg . = The contact of the gimbal as described in claim 9 which is in contact with the displacement range of 2 , and withstands more than 100 load-unload cycles without changing the elastic behavior. The manufacturing step of the rotating beam contact according to claim 9, wherein the manufacturing step of the rotating beam contact comprises: providing a substrate for forming the rotating beam to contact thereon; forming a conductive layer on the substrate, the conductive layer providing a conductive layer a first surface; 4SHAW/04001TW/NEO -29- 1249273 an electrical path etches the conductive layer to define the base portion and the elastic portion; and at least a portion of the transducing portion, the elastic portion is configured from the first: Extending, so that the base portion and the elastic portion provide a deformable guide 12 - a multi-flange solder ball contact of the connector array, and the cover is located in a plane including a contact array , the column has a = from about 0. 05 to the range of about 127 coffee, and the other elastic portion includes a plurality of flanges, and the base is - integral, and from the hybrid - substantially round _ The edge protrudes from the plane of the base for bonding-solder balls, and the contact provides - displacement about _ to about 1 〇 〇. The multi-flange solder ball contact of 9 θ $ item 13 has a pitch of about 127 Å and the contact is about 5 mils - the displacement is elastically deformable. The plurality of convex _balls are thin, the multi-bump solder ball provides a substrate for contacting the multi-flanged solder ball to be contacted thereon; forming a conductive layer on the substrate, the conductive layer providing a first surface; etching The conductive layer 'to define the base portion and the elastic portion; and = at least a portion of the elastic portion, the elastic portion is configured to be "large" from the first portion to elasticize the base portion (four) and provide a deformable guide 4SHAW /04001TW/NEO -30- 1249273 Electrical path. 16·—the contact that is implanted in an electrical connector, comprising: the base is substantially in the plane of the containing-connecting-like, and is arranged in a range of about 0·05 mm to about 127^; and-elastic The portion is integral with the base and protrudes from the plane of the wire portion to provide a normalized working range of about 〇·丨 to about 〇.44. Π· As requested by the worker 16, the upper limit of one displacement is used to define that the normalized working range corresponds to one of the 5 gram applied forces. Person 18. In the contact described in claim 16, a lower limit of a displacement is used to define the normalized working range 'determined by the resistance-to-knee point of the displacement curve. 19. The contact's one of the lower limits of the displacement as described in claim 16 is used to define that the f-regulation operation corresponds to a displacement above which one of the contacts has a resistance of less than about 15 η Ω. 2〇.—the side contacts of one of the electrical connectors in contact with the opposite side of a substrate, each contact comprising: another base substantially located in a plane containing a contact array, the array having a pitch From about 0.05 to about 1.27 mm; and an elastic portion integral with the base, projecting in the plane of the base, the bilateral contact providing a normalized working range of about Q 2 〇 88. · 4SHAW/04001TW/NEO -31- 1249273 21 • A method of making electrical contacts in a contact array, comprising: designing one of the dimensions and shapes of the contact, the contact comprising an elastic portion according to a particular design requirement, The design requirements include an array pitch of less than 1. 5 mm and a desired working range; ", using the shape and size according to the contact design - lithography to define the contact; ^ using the lithography pattern, the side of a conductive layer In order to produce a contact structure · to create a work - the material is phased to reach the contact structure of the site, to give the design requirements to meet the requirements of Landing; and 4SHAW/04001TW/NEO-32-