TW200532880A - Connector for making electrical contact at semiconductor scales and method for forming same - Google Patents

Connector for making electrical contact at semiconductor scales and method for forming same Download PDF

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Publication number
TW200532880A
TW200532880A TW093137786A TW93137786A TW200532880A TW 200532880 A TW200532880 A TW 200532880A TW 093137786 A TW093137786 A TW 093137786A TW 93137786 A TW93137786 A TW 93137786A TW 200532880 A TW200532880 A TW 200532880A
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TW
Taiwan
Prior art keywords
contact
contact element
connector
layer
substrate
Prior art date
Application number
TW093137786A
Other languages
Chinese (zh)
Other versions
TWI257695B (en
Inventor
Dirk D Brown
John D Williams
Eric M Radza
Original Assignee
Neoconix Inc
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Filing date
Publication date
Priority claimed from US10/731,213 external-priority patent/US20050120553A1/en
Priority claimed from US10/731,669 external-priority patent/US7244125B2/en
Application filed by Neoconix Inc filed Critical Neoconix Inc
Publication of TW200532880A publication Critical patent/TW200532880A/en
Application granted granted Critical
Publication of TWI257695B publication Critical patent/TWI257695B/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07342—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/50—Fixed connections
    • H01R12/51—Fixed connections for rigid printed circuits or like structures
    • H01R12/52—Fixed connections for rigid printed circuits or like structures connecting to other rigid printed circuits or like structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/70—Coupling devices
    • H01R12/71—Coupling devices for rigid printing circuits or like structures
    • H01R12/712—Coupling devices for rigid printing circuits or like structures co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit
    • H01R12/714—Coupling devices for rigid printing circuits or like structures co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit with contacts abutting directly the printed circuit; Button contacts therefore provided on the printed circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02—Contact members
    • H01R13/03—Contact members characterised by the material, e.g. plating, or coating materials
    • H—ELECTRICITY
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    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02—Contact members
    • H01R13/22—Contacts for co-operating by abutting
    • H01R13/24—Contacts for co-operating by abutting resilient; resiliently-mounted
    • H01R13/2407—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the resilient means
    • H—ELECTRICITY
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    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02—Contact members
    • H01R13/22—Contacts for co-operating by abutting
    • H01R13/24—Contacts for co-operating by abutting resilient; resiliently-mounted
    • H01R13/2464—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the contact point
    • H01R13/2492—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the contact point multiple contact points
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
    • H01R43/007—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for elastomeric connecting elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4092—Integral conductive tabs, i.e. conductive parts partly detached from the substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/02—Arrangements of circuit components or wiring on supporting structure
    • H05K7/10—Plug-in assemblages of components, e.g. IC sockets
    • H05K7/1053—Plug-in assemblages of components, e.g. IC sockets having interior leads
    • H05K7/1061—Plug-in assemblages of components, e.g. IC sockets having interior leads co-operating by abutting
    • H05K7/1069—Plug-in assemblages of components, e.g. IC sockets having interior leads co-operating by abutting with spring contact pieces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/32—Holders for supporting the complete device in operation, i.e. detachable fixtures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/1901—Structure
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    • H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
    • H01R43/20—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for assembling or disassembling contact members with insulating base, case or sleeve
    • H01R43/205—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for assembling or disassembling contact members with insulating base, case or sleeve with a panel or printed circuit board
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/325—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor
    • H05K3/326—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor the printed circuit having integral resilient or deformable parts, e.g. tabs or parts of flexible circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Measuring Leads Or Probes (AREA)

Abstract

A connector for electrically connecting to pads formed on a semiconductor device includes a substrate and an array of contact elements of conductive material formed on the substrate. Each contact element includes a base portion attached to the top surface of the substrate and a curved spring portion extending from the base portion and having a distal end projecting above the substrate. The curved spring portion is formed to curved away from a plane of contact and has a curvature disposed to provide a controlled wiping action when engaging a respective pad of the semiconductor device.

Description

200532880 九、發明說明： 【發明所屬之技術領域】 本發明係關於可重複連接、可重複裝設之電連接器，. 尤其關於連接半導體級裝置之電連接器。 σσ 【先前技術】 電互連（interconnects)或連接器用以將兩個或更 多電子組件連接在一起，或將一電子組件連接至一電氣設 備，例如電腦、路由器或測試器。舉例而言，電互連用= 連接-電子組件，如積體電路（IC或晶片），至一印刷電 路板。電互連在積體電路製造期間，亦肋連接 積體電路裝置至-測試系統。於某些應用中，電互連或連 =提供可分離或可餘裝設的連接，使得其賴的電子 、、且4可移除並再次附接。舉飾言，—般希望使用可 =互連裝置將經封裝的微處理器晶片裝設到 =，使得故障的晶片可㈣移除，或者可輕易4= 曰曰片0 中亦有利用電連接器、，直接電連接形成於石夕晶圓 :至屬墊（pads)。此類的電連接器通常稱為「探針 =lbe)t或「探針卡（probe card)」，且—般用在製程 :a、晶圓測試。探針卡一般裝設在測試器上， 圓的電連接’以測試形成在晶圓上的個別積體 兒々功此性以及是否符合特定參數的限制。 、200532880 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to electrical connectors that can be repeatedly connected and installed, and more particularly to electrical connectors for connecting semiconductor-level devices. σσ [Prior art] Electrical interconnects or connectors are used to connect two or more electronic components together, or to connect an electronic component to an electrical device, such as a computer, router, or tester. For example, electrical interconnection = connection-electronic components, such as integrated circuits (IC or chip), to a printed circuit board. The electrical interconnection also connects the integrated circuit device to the test system during the fabrication of the integrated circuit. In some applications, electrical interconnection or connection = provides a detachable or reproducible connection, so that the electronics, and 4 can be removed and reattached. As an example, it is generally desirable to use packaged interconnect devices to mount the packaged microprocessor chip to the chip, so that the faulty chip can be removed, or it can be easily connected to the chip with electrical connections. The device and the direct electrical connection are formed on the Shixi wafer: the pads. This type of electrical connector is usually called "probe = lbe) t or" probe card ", and is generally used in process: a, wafer test. The probe card is generally installed on a tester, and a circular electrical connection 'is used to test the performance of individual packages formed on the wafer and whether they meet the limits of specific parameters. ,

4SHAW/04002TW/NEO 200532880 傳統電連接器通常由模鍛（对—⑷金屬彈簧製成， 其形成後接著個別***一絕緣載體，以形成電連接元件陣 列。其他製作電連接器的方法包含使用等向的導電黏著 劑、射出成型導電黏著劑、束線導電元件、打線 (wirebonding)技術形成的彈簣、以及小金屬塊。 基板柵格陣列（land grid array，LGA)意指金屬墊 (亦稱基板（lands))陣列，以作為積體電路封裝、印刷 電路板、或其他電子組件的電接觸點。金屬塾通常利用薄 膜沉積技術形成，並塗佈金以提供不氧化 (non-oxidizing)表面。球栅格陣列（baU grid bga)意指焊料球（solder balls)或焊料凸塊㈤齡 =mpS) _ ’以作為積體電路封裝的電接觸點 格陣列和球栅格_兩者皆廣泛使驗半導體業，且各= 5，優_缺點。舉例而言’―般製作基板栅格陣列封 格，封裝便宜’因為無須形成焊料球或焊料凸 而’基板柵格陣列封裝一般較難組裳至pc板 基板拇格陣列連接器，提供連接至 祕_龍，可移除且可重複裝 口又之插座（socketing)能力。 小，向半導體積體電路中的尺寸縮 觸點的即距（pltch)。節距 安 (亦稱做「接腳（lead)) 、一豆=置上口電接觸點 」）間的間隔，其在某些應用中劇4SHAW / 04002TW / NEO 200532880 Traditional electrical connectors are usually made of die-forged (opposite-⑷ metal springs, which are then formed by inserting an insulating carrier individually to form an array of electrical connection elements. Other methods of making electrical connectors include use, etc. Oriented conductive adhesive, injection-molded conductive adhesive, beam-line conductive elements, springs formed by wire bonding technology, and small metal blocks. Land grid array (LGA) means metal pads (also known as Lands) array to serve as electrical contact points for integrated circuit packages, printed circuit boards, or other electronic components. Metal rhenium is typically formed using thin film deposition techniques and coated with gold to provide a non-oxidizing surface BaU grid bga means solder balls or solder bump age = mpS) _ 'as an electrical contact point grid array and ball grid for integrated circuit package _ both are extensive For the semiconductor industry, and each = 5, the advantages and disadvantages. For example, '--generating a substrate grid array seal, and the package is cheap' because there is no need to form solder balls or solder bumps. 'The substrate grid array package is generally more difficult to form a PCB array to the PCB board substrate grid array connector, providing connection to Secret_Dragon, removable and repeatable socketing capability. Small, shrinks the contact pitch (pltch) to the size in the semiconductor integrated circuit. Pitch Ann (also known as "lead", one bean = put on the electrical contact point)), which in some applications play

4SHAW/04002TW/NEO 200532880 烈減少。舉例而言，丰導辦曰 微米 戍更少的體曰曰圓上的接觸墊可有250 的即距。在25〇微米節距 π 作至這鲜導$_技術來製 昂貴。各丰莫栌壯里 刀離电連接係非常困難且非 =要叫連接—陣列中的多個接觸墊時，問題變得甚至 妒上觸塾（例如石夕晶圓或基板栅格陣列封 刮，1ng)動作和穿入)—ί: 屮’以突破任何氧化物、有機材料、或其他可能 =ft屬墊表_膜，否_些膜可能會阻礙電連接。 _接合基板上的金屬塾。參昭 H ^10包含接觸元件12，供電連接至基板14二 浐斜丨/。連接器1〇可為晶圓探針卡’則接觸元件12為 如針太（tlp) ’供接合矽基板14上之墊16。在正常處理 j存狀況下’膜18 (其可為氧化物膜或有機膜）形成在 至屬墊16的表面上。當接觸元件12接合金屬墊16，接觸 兀件必須穿入膜18，以形成到金屬墊16之可靠電連接。 膜18之穿入可源自接觸元件接合金屬塾時，接觸元件a 之擦刮動作或穿入動作。 當需要提供擦刮或穿入動作時，重要的是具有受良好 控制的擦刮或穿入動作，在製作墊接觸時，使其夠強以穿 過表面膜，但夠柔以避免傷害金屬墊。此外，重要的是任4SHAW / 04002TW / NEO 200532880. For example, the contact pads on a circle with a thickness of micrometers or less can have 250 pitches. It is expensive to make this technique at 25 μm pitch π. It is very difficult and difficult to separate the electrical connection system of each model. When multiple contact pads in the array are connected, the problem becomes even jealous. (1ng) Action and penetration) —ί: 以 'to break through any oxide, organic material, or other possible materials, which may hinder the electrical connection. _Join the metal cymbals on the substrate. The reference H ^ 10 includes a contact element 12 which is electrically connected to the substrate 14 二 ///. The connector 10 can be a wafer probe card, and the contact element 12 is a tlp 'for bonding the pad 16 on the silicon substrate 14. Under normal processing conditions, a 'film 18 (which may be an oxide film or an organic film) is formed on the surface of the subordinate pad 16. When the contact element 12 engages the metal pad 16, the contact element must penetrate the film 18 to form a reliable electrical connection to the metal pad 16. The penetration of the film 18 may be caused by the scraping action or the penetrating action of the contact element a when the contact element is bonded to the metal 塾. When it is necessary to provide a scraping or penetrating action, it is important to have a well-controlled scraping or penetrating action. When making the pad contact, make it strong enough to pass through the surface film, but soft enough to avoid damaging the metal pad . In addition, it is important that any

4SHAW/04002TW/NEO 200532880 以暴露足夠的金屬表 何擦刮動作提供一足夠的擦刮距離， 面，而有良好的電連接。 類似地 狀曰Η關Γ 料琢（如形成在球柵格陣列封 衣、日日片、，及封衣、或晶圓、級封裳上的焊料 歧: 共擦刮7入動作’以突破焊料球上的原生= 當使用傳統方法來製造電接觸至坪料^二二 全從封裝移除焊料球。w 2A例 =害或元 件12接卿成在例如供峨之^?= 祕球22知，接觸元件12利用穿人動作，通常0 半導體裝置(如PC板或晶片級封S 20二依::另-坑會導鱗财細軸㈣ =2中= 金屬，而，在焊= 圖形2=^ 之頂表面上’此凹坑係由接觸元件 因此，期望提供一 擦刮動作於金屬墊上， 期望此擦刮動作提供達 種電接觸元件，其可提供受控制的 特別是節距小於50微米的墊。亦 50%接觸墊的擦刮距離。此外，當4SHAW / 04002TW / NEO 200532880 Exposed enough metal surface. The scraping action provides a sufficient scraping distance, surface, and good electrical connection. A similar shape is said to be cut off (such as solder varnish formed on the ball grid array coat, Japanese-Japanese film, and coat, or wafer, grade seal clothes: a total of 7 operations into the scrape to break through Native on the solder ball = When using conventional methods to make electrical contact to the material ^ Erquan removes the solder ball from the package. W 2A Example = Harmful or component 12 is connected to for example ^? = Secret Ball 22 It is known that the contact element 12 uses a penetrating action. Generally, a semiconductor device (such as a PC board or a wafer-level package S 20 II) :: Another-the pit will guide the scales of the thin shaft ㈣ = 2 = metal, and the welding = graphics On the top surface of 2 = ^, this recess is formed by the contact element. Therefore, it is desirable to provide a scraping action on the metal pad. It is expected that this scraping action provides a variety of electrical contact elements, which can provide controlled, especially pitch less than 50 micron pad. Also 50% contact pad scratching distance. In addition, when

4SHAW/04002TW/NEO 200532880 製作電接觸至焊料球時，期炒 受控制的_物^可提供 面。 个铋告焊料球的接觸表 (imsalignnient)。.^，錢^獅的位置失準 的差显，當導舰^ 曰+導體晶圓和封裝製程中 .3面尺=ΐί (金屬塾或谭料球）最終位置、^ 千面尺寸之差異。於接觸點陣列中，位置失準 =之相對位置的差異。因此，連接 ： 念=位置差異’以適用在大部分應用中。所以 寸可縮放（scalable)的電細元件，其可彈作 而能夠容忍共面性之正常差異以及細點之位 f供電連接予半導體裝置的連接器或互連系統屬已 知、。舉例而言，於2〇〇〇年3月7日核准&Eldridge等人 之美國專利6, 〇32, 356號，揭露彈性接觸結構之陣列，其 ，直接衣5又於半導體晶圓之焊墊（b〇nding ρΜ)上。接觸 結構係+藉以下形成··附接金接合線至晶圓，塑形接合線， 亚接著塗覆（overcoating)接合線，以形成複合 (composite)接觸元件。雖然Eldridge揭露的方法，提 供半導體級之全金屬接觸陣列，其中一次形成一個接觸元 件’因此接觸元件需要昂貴的系列製程。此外，接觸結構 固有的尖形（pointy shape)導致在製造接觸時，穿入動 作易於傷害如焊料球之接觸點。4SHAW / 04002TW / NEO 200532880 When making electrical contact with solder balls, the speculation can be controlled to provide noodles. Imsalignnient of two bismuth solder balls. . ^, Qian ^ lion's positional misalignment is significant, when the pilot ^ ^ + conductor wafer and packaging process. 3 surface rule = ΐί (metal 塾 or Tan material ball) final position difference, ^ difference in thousand face size . In the contact point array, position misalignment = difference in relative position. Therefore, connect: read = position difference 'to apply in most applications. Therefore, it is known that electrically-scalable electronic components that are scalable can tolerate normal differences in coplanarity and fine points. Connectors or interconnection systems that supply power to semiconductor devices are known. For example, U.S. Patent No. 6,003,356 approved by & Eldridge et al. On March 7, 2000, discloses an array of elastic contact structures, which directly coats 5 and solders the semiconductor wafer. On a pad (booning pM). The contact structure system is formed by attaching a gold bonding wire to a wafer, shaping the bonding wire, and then overcoating the bonding wire to form a composite contact element. Although the method disclosed by Eldridge provides a semiconductor-level all-metal contact array, one of which is formed one contact element at a time, so the contact element requires an expensive series process. In addition, the pointy shape inherent in the contact structure results in the penetrating action tending to hurt contact points such as solder balls when making contacts.

4SHAW/04002TW/NEO 200532880 於2001年2月6日核准給Smith等人之美國專利 6,184, 065號，揭露由薄金屬膜中的固有應力梯度（stress gradient)創造的小金屬彈簧。Smith的方法提供半導體 級的全金屬接觸陣列。然而，金屬彈簀指入欲接觸之平面 表面，因此當用以探測（probe)焊料球時，易於傷害焊 料球。 於2001年6月26日核准給Khoury等人之美國專利 6,250, 933號，揭露一種接觸結構·，其係藉微製造 (microfabrication)科技在一半導體基板或其他介電質 上產生接觸器，且其中每一接觸器形狀像一橋，具有一或 更多的角部（angled portion)支稽一水平接觸部。Kh〇ury 的方法提供半導體級之全金屬接觸陣列，但當面對金屬塾 時’因為麵元件和金祕平行，錄供雜的擦刮動 作。Khoury勤吐她（aspenties)以及製造不對稱结 [處理缺乏擦刮之問題。然而，熟習 ==更:的擦•離，對良好電連接^ 球陣列平行，Kh '接，料球陣列時，因為接觸面和焊料 衣皁歹KhQury的对f要㈣叙 接觸。這樣的接觸會導致焊料 $ 被 合在後續㈣nr、J *球基表面上的傷害，其接著 曰在後4科回流期間導致空洞的形成，如圖％所示。 總結而言’傳統連接器使用在小節距尺寸的半導體裝4SHAW / 04002TW / NEO 200532880 US Patent No. 6,184, 065 issued to Smith et al. On February 6, 2001, discloses small metal springs created by inherent stress gradients in thin metal films. Smith's method provides a semiconductor-grade all-metal contact array. However, metal impingement points into the flat surface to be contacted, so it is easy to hurt the solder ball when it is used to probe the solder ball. U.S. Patent No. 6,250,933, issued to Khoury et al. On June 26, 2001, discloses a contact structure that uses microfabrication technology to create contactors on a semiconductor substrate or other dielectric, Each of the contactors is shaped like a bridge and has one or more angled portions supporting a horizontal contact portion. Khoury's method provides a semiconductor-grade all-metal contact array, but when facing metal 塾, because the surface elements are parallel to the gold, recording and scratching operations are provided. Khoury spit her (aspenties) and creates asymmetric knots [to deal with the problem of lack of scratches. However, familiarity == more: rubbing and separating, good electrical connection ^ ball array parallel, Kh 'connected, the ball array, because the contact surface and solder clothing soap KhQury's pair f to contact. Such contact will cause the solder $ to be damaged on the subsequent ㈣nr, J * ball base surface, which will then lead to the formation of voids during the next 4 reflows, as shown in Figure%. In summary, traditional connectors are used in small-pitch semiconductor packages.

4S H AW/04002TW/N EO -10- 200532880 ίίΐι傳統連接在提供擦刮/穿入動作而不傷害 〒枓球之基表面的接觸點方面，亦不符要求。 【發明内容】 細Ιίΐ本發明—實施例’―連接11供電連接形成於一半 带姑二f之墊，係包含—基板’以及形成於基板上之導 】面的—f 70件陣列。每—接觸元件包含依附於基板之頂 抑二ΐΐ (base _iQn)’以及—曲彈簧部係自基 末端（distal end)突出於基板之上。曲 麵從-接鮮㈣開（eurve away)，並具有 /'田接合半導體裝置之一個別墊時，用以提供一受 控制的擦到動作。 的遠明之另一方面，一種形成包含接觸元件陣列 ίΐ 2包含：提供—基板，形成—支撐層於基 ρ -丛圖r化支撐層以定義—支撐元件_，等向钱刻支 牙凡件陣列以在每—支撐元件頂上形成圓角（纖ded comers) ’形成一金屬層於基板上與支稽元件陣列上，以 屬層以定義一接觸元件陣列’其中每一接觸元 笛!^金屬部於基板上’以及—第二金屬部延伸自 f 一至屬並部分橫過一個別支撐元件之頂部。此方法更 已含移除支撐元件_。如此形成之接·僻列之每一 個包含-基部依附於基板’以及—曲彈簧部從基部延伸、 、'^、有末^犬出於基板之上。.相對基板表面，曲彈箬部 形成為具有—凹（concave)曲率。 八4S H AW / 04002TW / N EO -10- 200532880 The traditional connection also does not meet the requirements in terms of providing a wipe / penetration action without harming the contact points of the base surface of the ball. [Summary of the Invention] In the present invention, an embodiment of the present invention—the connection 11 is provided with a power supply connection formed on a half of the pad with a second f, which includes a-substrate 'and an array of -f 70 pieces formed on the substrate. Each of the contact elements includes a base _iQn 'attached to the substrate, and a curved spring portion protrudes from the distal end on the substrate. The curved surface is eurve away and has a separate pad for a semiconductor bonding semiconductor device to provide a controlled wiping action. On the other hand, a method of forming an array including contact elements 2 includes: providing-a substrate, forming-a support layer on a base ρ-cluster diagram to define a support layer-supporting elements _, isotropically carved teeth Array to form rounded corners (fiber ded comers) on the top of each support element 'form a metal layer on the substrate and the support element array, and belong to the layer to define a contact element array' each of the contact element flutes! ^ Metal Part on the substrate 'and-the second metal part extends from f to a part and traverses the top of another supporting element. This method also includes removing support elements. Each of the connection and isolation columns thus formed includes-the base portion is attached to the substrate 'and-the curved spring portion extends from the base portion, and the first and second dogs are out of the substrate. With respect to the substrate surface, the curved elastic ridge is formed to have a concave curvature. Eight

4S H AW/04002TW/N EO -11 - 200532880 根據本發明之另一方面，一一 列的-連接器的方法，包含nr接觸兀件陣 、、ΐ板上’形成一支揮層於導電黏著層上，圖案化去 撐層以定義一支撐元件陣列，耸h /、 每-支樓元件頂上形成圓角，：=凡件陣列以在 上與支撐it件陣列上金屬層於導電黏著層 -接觸耕陣列。每—接觸 2 -導電黏著部上，以及=金屬#成於 部分橫過-個別支撐元件屬金屬部並 元件陣列。 。此方法更包含移除支稽 如此形成之_树陣_每—個包含：一 基部依附 板表面，曲彈簣部形成為具有一 ， -上。相對基 凹曲率。 考慮以下詳細說明與所_式時，會更了解本發明 【實施方式】 根據本發明之原理， 連接至-裝置的連接器，包重複裝設之 平面彎開’並具—成為從-接觸 提供-受控制的擦刮動作。本：^:妾觸點時’用以4S H AW / 04002TW / N EO -11-200532880 According to another aspect of the present invention, a one-column-connector method includes nr contacting the element array, and a slab on the slab to form a wave layer on the conductive adhesive. On the layer, pattern the de-support layer to define an array of support elements, forming rounded corners on the top of each branch element: = = array of elements with a metal layer on a conductive adhesive layer on top of the array of supporting elements- Contact ploughing array. Each-contact 2-on the conductive adhesive part, and = metal #formed across-individual support elements belong to the metal part and the element array. . This method further includes removing the branch _ tree array_ each formed as follows: a base is attached to the surface of the board, and a curved elastic ridge is formed to have a, -up. Relative base concave curvature. The present invention will be better understood when considering the following detailed descriptions and formulas. [Embodiment] According to the principle of the present invention, the connector connected to the device, the plane of the repeated installation of the package is bent away, and the device becomes a slave-contact device. -Controlled wiping action. This: ^: 妾 contact time ’

舍月之連接器可用以電連接 4SHAW/04002TW/NEO -12- 200532880 特別地是，本發明之接^ f核更切距的接觸點，且 小節距的接触。藉由提連接至具5G微米或更 連接器可用《連接本發明之 中的接觸元件具有大的彈性工作範 =作路徑長度，藉此容許接觸元件在一 i 木乍片中“要的大範圍_(c〇mpressi〇ns)上操作。 相較於傳統連接器系統，本發明之連接器 Ϊ一，本發明之連接器包含接觸—m2 n、禮-接觸平面（亦即將接觸的接觸點表面）。因 ’虽接合金㈣鱗料料，接觸元件可提供 (峨）控制的擦鳴作，容許有效的魏接而不傷宝接 觸表面。再者，本發明之連接財的接觸元件，以最^接 觸力可達躲佳的擦刮轉。傳錢鮮通f包含f 觸平面的㈣簧構件（member)。當此轉簧構件接合一 接觸墊時，這樣的曲率導致—穿人動作，且通常對塾&成 所不欲之傷害。選替地，在其他傳統連接器中，接觸元件 不是沒提供擦刮動作就是擦刮距離不足。本發明之連接器 克服許多傳統連接器之缺點。 ™ 第二，本發明之連接器提供尺寸可縮放、低輪廓 (profile)、低***力（insertion force)、高密度、以 及可分離/可重複連接的電連接，且特別地適用於高速和The connector of the moon can be used to electrically connect 4SHAW / 04002TW / NEO -12- 200532880. In particular, the contact of the present invention has a more tangential contact point and a smaller pitch contact. By connecting to a connector with 5G micron or more, it is possible to connect a contact element in the present invention with a large elastic working range = working path length, thereby allowing the contact element to have a large range in a chip. Compared with the traditional connector system, the connector of the present invention is one. The connector of the present invention includes a contact-m2 n and a contact-contact plane (that is, the surface of the contact point to be contacted). ). 'Although the gold scale material is joined, the contact element can provide (E) controlled fricative action, allowing effective contact without hurting Bao's contact surface. Furthermore, the contact element of the present invention for The maximum contact force can be a good scratching rotation. Passing money Xiantong f contains a member of the reed spring that touches the plane. When this revolving spring member engages a contact pad, such curvature results in a penetrating action, And it usually hurts 塾 & undesirably. Alternatively, in other conventional connectors, the contact element either does not provide a scraping action or the scraping distance is insufficient. The connector of the present invention overcomes the shortcomings of many conventional connectors . ™ Second, the present invention The connectors provide scalable electrical connection, low profile, low insertion force, high density, and detachable / reconnectable electrical connections, and are especially suitable for high speed and

4SHAW/04002TW/NEO -13- 200532880 高，應用。此連接器可以相對低成本製作， :且連接器可： (_’其中墊或基叙基板 可調整尺寸，以接 其中ϊί和用以接合半導體裝置之墊， ，外 =置。此與許多傳統連接㈣ 二 向〇知1)力接合—咖，且_接==板 例而ΐ=之=用=;， 中，「裝置」他半導體或電氣裝置。本說明 件之類。耻，Vit 輯接或互連的電子裝置或組 ，的或未封裝的積體成 片才果、、且上、或在積體電路封裝上。 顯示一連接器 圖3A和3B為根據本發明之一實施例，4SHAW / 04002TW / NEO -13- 200532880 high, application. This connector can be manufactured at a relatively low cost, and the connector can be: (_ 'Where the pad or base substrate can be resized to connect to it and the pad used to join semiconductor devices, externally. This and many traditional Connection ㈣ two-way 〇 know 1) force joint-coffee, and _ connect = = board example and ΐ = of = use = ;, "device" other semiconductor or electrical device. This note or the like. Shame, Vit is an assembly or interconnection of electronic devices or groups, or unpackaged integrated products, and it is on, or on integrated circuit packaging. A connector is shown in FIGS. 3A and 3B according to an embodiment of the present invention.

4SHAW/04002TW/NEO -14- 200532880 上做為 墊64為形成在曰圓卜的：厘可為一矽晶圓，其中金屬 甘 成在阳g上的金屬焊墊。半導體 -基板柵袼陣列封裝’其中 :置60亦可為 格陣列封裝上的「A# n、H、/代絲成在基板栅 和，二==;= 接塾。圖Μ 而不欲限财接8 5fl Dm^n6^糊示說明， 裝連接。 /、應用在共曰曰圓或基板柵格陣列封 一基物54，形成在 因為連接器50可用以連接至料。 赍佔田企憎碰也 丈饮土亍夺粒級的丰導體裝置，通 中，基板50 H用的材料形成連接器5G。於一實施例 料二-人Μ 或喊晶圓形成，而細元件54 开/成於1電層上’介f層可缝f石上砍（卿、玻璃 上石夕（S0G)、硼磷四乙基正矽酸鹽（ (TE〇S) ,， 陣歹i般喊為—轉列’配置成與將細的半導體裝置 上對應的接觸點配對。於―實施财，連接^ 以接觸具50微米或更小節距的金屬墊。 戍 接觸元件54係利用導電材料形成。每一接觸元件54 包含-基部55A依附於基板52之頂表面，以及一曲彈菩 部55B延伸自基部55A。曲彈簧部55β具一近端（卿㈣4SHAW / 04002TW / NEO -14- 200532880 The pad 64 is formed in a circular shape: the centimeter is a silicon wafer, in which metal is formed as a metal pad on a positive electrode. "Semiconductor-substrate grid array package" where: 60 can also be "A # n, H, / generation wire on the grid array package on the grid array package, two ==; = connection. Figure M and not want to limit money Connect 8 5fl Dm ^ n6 ^ paste instructions, and install the connection. / 、 Apply to a circle or substrate grid array to seal a substrate 54, formed because the connector 50 can be used to connect to the material. The bumper also grabs the grain-level high-conductor device. In the middle, the material used for the substrate 50 H forms the connector 5G. In one embodiment, the material is formed by a person M or a wafer, and the fine component 54 is opened / formed. On the 1 electric layer, the dielectric layer can be cut on the stone (Qing, glass on the eve (S0G), boron phosphorus tetraethyl orthosilicate (TE0S)), and the array is called-turn The column is configured to be paired with a corresponding contact point on a thin semiconductor device. In ―Implementation, connect ^ to contact a metal pad with a pitch of 50 micrometers or less. 戍 The contact element 54 is formed using a conductive material. Each contact The element 54 includes a base portion 55A attached to the top surface of the base plate 52, and a zigzag spring portion 55B extending from the base portion 55A. The curved spring portion 55β has a proximal end (Qing

4SHAW/04002TW/NEO -15- 200532880 ==基部，以及—末端（distaiend)突出於基 接人丰_ ί㈣3A和3B例示連接1150為顛倒狀，以 + ^體衣置6G。本說明中方向性詞彙之使用，如 朝上i、、Γί面」，意欲描騎連接11放置祕觸元件面 二二件的位置關係。熟此技藝者會理解文中 同部分之相對:;咖不說明’且只欲描述接觸元件不 形成為從 •接觸平面彎開。本說明中 仍參妝圖3Α，接觸元件54包含曲彈簧部， 接觸平面」意指接觸元件 觸點表面。本例示中，接觸平面為金屬墊64 55β相對於基板52表面， 曲 η 二ϋ _ 羊(c°ncave curvature)。因此， 金屬裝置之-個別 接哭加—外部偏力（於圖3A中標為F)至連 t：Lm 個別pi曲彈黃部以—受控制的擦刮動作接合 接觸7"件製造有效的電連接至個別 ^接觸兀件54之曲率麵同時達到最佳的接觸力和 $的制距離。擦刮距離係#接觸金屬墊時，接觸元件 + ϋίΐΐί表面所做的移動(traVei)量。-般而 。妾觸力可為5至100克的等級，其視應用而定，而擦4SHAW / 04002TW / NEO -15- 200532880 == the base, and-the end (distaiend) protrudes from the base. ㈣ 3A and 3B exemplify that the connection 1150 is reversed, and 6G is placed in a + ^ body suit. The use of directional vocabulary in this description, such as facing up i, and Γ face ", is intended to describe the positional relationship between the two or two pieces of the contacting element 11 on which the mysterious touch element is placed. Those skilled in this art will understand the relative of the same parts in the text:; c will not explain ’and will only describe that the contact element is not formed to bend away from the contact plane. In this description, referring to FIG. 3A, the contact element 54 includes a curved spring portion. The “contact plane” means the contact surface of the contact element. In this example, the contact plane is the metal pad 64 55 β with respect to the surface of the substrate 52, and has a curvature η ϋ _ 羊 (c ° ncave curvature). Therefore, the metal device—individual contact plus—external biasing force (marked as F in FIG. 3A) to even t: Lm individual pi curved elastic yellow portion—controlled scraping action to engage the contact 7 " pieces to make effective electricity The curvature surface connected to the individual contact element 54 achieves the best contact force and control distance at the same time.擦擦 距离 系 # The amount of movement (traVei) by the contact element + ϋίϋί surface when contacting the metal pad. -Likely.妾 The contact force can be from 5 to 100 grams, depending on the application.

4SHAW/04002TW/NEO -16 - 200532880 刮距離可為5至4〇〇微米的等級。 本發明接觸元件之另一特徵A 可有非常大的彈性工作範圍。I二ί觸3之曲彈箐部 度等級的雜工作細。▲加Ϊ細耕之電路經長 長度」定義為電流從曲彈簧部之末 电路往 經的距離。基本上，本發日月之連接==70件之基部行 接觸元㈣滅^連接㈣接觸元件具有横跨 时接觸元件54係_-導電金屬形成，其 實施例中’接觸元件54係利用鈦作為域 'U秦而^成’此支撐轉稍後可被電锻（伽⑷以= 所欲，性仃為。於其他實麵巾，綱元件Μ係利= 下形成：銅合金或多層金屬片（sh )， ，金临顧u)多層金屬片。於一)較:圭 ==下开ί成:一小粒(㈣11-_)銅-鈹 ar/a ^ 〇孟接著鍍上無電（electroless )鎳-金 (Ni/Au)，以提供一不氧化表面。進一步，於另一每 中’接觸元件54於基部和曲彈簧部係使用不同金屬 圖3A所示實施例中，接觸元件54顯示為由一矩 ::和：曲彈簧部形成。此配置只作為例示而不欲作為J 制。本發明之接觸元件可以多種配置形成，且每—接觸元 件只需有足以附接曲彈簧部至基板的基部。基部可採用任4SHAW / 04002TW / NEO -16-200532880 The scraping distance can be in the range of 5 to 400 microns. Another feature A of the contact element of the present invention may have a very large elastic working range. I 2 触 Touch 3 of the impeachment department level miscellaneous work. ▲ The length of the long circuit of the circuit is defined as the distance that the current travels from the circuit at the end of the curved spring portion. Basically, the connection between the sun and the moon of this issue == 70 pieces of base contact elements ㈣connection ㈣ The contact element has a contact element 54 when it is straddled _-conductive metal, in its embodiment, the 'contact element 54 is made of titanium As the domain 'U 秦 而 ^ 成', this support can be electro-forged later (Gamma is equal to what you want and sexuality is equal to. For other solid towels, the outline element M is profitable = the following is formed: copper alloy or multilayer metal (Sh), Jin Lingu u) Multi-layer metal sheet. (Yu Yi) Comparison: Gui == Xia Kaicheng: A small grain (㈣11-_) of copper-beryllium ar / a ^ Mn is then plated with electroless nickel-gold (Ni / Au) to provide a non-oxidized surface. Further, in another embodiment, the contact element 54 uses a different metal for the base portion and the curved spring portion. In the embodiment shown in FIG. 3A, the contact element 54 is shown as being formed by a moment :: and: curved spring portion. This configuration is for illustration only and is not intended as a J system. The contact elements of the present invention can be formed in various configurations, and each contact element only needs to have a sufficient amount to attach the curved spring portion to the base portion of the substrate. The base can use any

4SHAW/04002TW/NEO -17- 200532880 美為卿或其他有用的形狀，以附接接觸 •基部=如=心树可包含多㈣彈簧部延伸 本發明之連翻的大賴工作翻，使 和位i失“ r置，_可=的置:連了 連接11 50接合不同的半導«置。圖4A中， ^接屬墊之位置差異，需要連接器Μ之―端的接 的更多°圖4β中’欲接觸 不ΛΛ「 作耗圍，不同的接觸元件可為 。私度的_，⑽有翻元储供有朗電連接。 夂j ^和阳例示根據本發明另-實施例之-連接哭。4SHAW / 04002TW / NEO -17- 200532880 US or other useful shapes to attach contacts • Base = such as = the heart tree can include multiple springs to extend the continuous working of the present invention to make the peace I'm lost, r can be set: connected to 11 50 to join different semi-conductors «set. In Figure 4A, the position difference of the ^ connection pads, more connectors need to be connected- In 4β, “to contact without ΛΛ” is used as a perimeter, and different contact elements can be. Private _, ⑽ has a flip-flop storage for Lang electrical connection. 夂 j ^ and 例 exemplify according to another embodiment of the present invention- Connection cry.

75B ^ 75C —曲:=㈣為從；觸平 ==有 供受控制體裝置之接觸點時，以提 丁刪乍再者，曲彈簧部75B與75C具有大 4S H AW/04002TW/N ΕΟ -18- 200532880 用，籍此容許 於本例示中，連接器7〇用以接 例如-球栅格陣列封，，白人 作體衣置別， 點。圖5B例示連接界^二二本4之陣列作為接觸 7〇可用以接觸全裝置80。連接器 ; 丧扪Μ屬墊，例如基板栅格陣列 連接器7°接觸焊料球Μ提供特別:優點。’ ”不會傷J工面表:此:== 第二，因為接觸元件74之每一 =平_，本例中接觸平面是與欲接觸二料 動Γ觸個別焊料球時，接觸元件74提供 接觸表面料：ΐ^，。可做有效電連接而不傷害 微米或更小ίΐΐΓ焊放’且可用以接觸具250 4SH AW/04002TW/ΝΕΟ -19- 200532880 她細㈣或位置失 部線二祕"f5A尹的連接器50和70顯示為包含一曲彈並 爾為:;部本突例僅為“ 件⑽包含-基部94A 第93—92上。接觸元 曲彈簧部94c。第 j蛛耳M4B，以及一第二 有彼此指離的末端。接觸=94B ^第二曲彈簧部94C具 包含-金屬塾或一二:⑼ 件與第二曲彈菁部間支托住焊二ΐ ί 的方向，用一受控制的擦刮動:^觸:^接之::面面彎開 件部：::95形：基板96上。接觸元 Λ馮笪加07r ha a # 弟一曲弹黃部97B以及一第二 L伸自基部。本實施例中，第-曲彈箬部97Β ϊί二=黃Γί以螺旋(spiral)配置突嶋板96 彎開，並提供-酬觸平面75B ^ 75C —Curve: = ㈣ is from; touch flat == When there is a contact point for the controlled body device, the curved spring parts 75B and 75C have a large 4S H AW / 04002TW / N ΕΟ -18- 200532880, which is allowed in this example. The connector 70 is used to connect, for example, a ball grid array seal. FIG. 5B illustrates that the connection array 222 can be used as a contact 70 to contact the full device 80. Connectors are mats, such as substrate grid arrays. Connectors at 7 ° contact with solder balls provide special: advantages. '”Will not hurt the J surface table: this: == Second, because each of the contact elements 74 = flat_, in this example, the contact plane is when the two solder balls are in contact with the material to be contacted, and the contact element 74 provides Contact surface material: ΐ ^. Can be used for effective electrical connection without harming the micron or smaller, and can be used to contact with 250 4SH AW / 04002TW / ΝΕΟ -19- 200532880 Second Secretary " F5A Yin's connectors 50 and 70 are shown as containing a round of bullets and are as follows: This part of the example is only "Piece Contains-Base 94A 93-92. The contact element curved spring portion 94c. The j-th spider ear M4B, and a second have pointed ends away from each other. Contact = 94B ^ The second curved spring portion 94C includes -metal 塾 or one or two: the direction between the two pieces and the second curved elastic portion supports the welding two ΐ, using a controlled wiping: ^ Touch : ^ 接 之 :: 面面 弯 开 件 部 ：:: 95 形 ： 上 板 96 。. Contact element Λ 冯 笪 加 07r ha a # Brother Yiqu plays the yellow part 97B and a second L extends from the base. In this embodiment, the first-curvature 箬 部 97Β ϊί 二 = 黄 Γί is arranged in a spiral configuration, the projection plate 96 is bent open, and a -reciprocating plane is provided.

4SHAW/04002TW/NEO -20- 200532880 本發明之連接器可使用不同製程順序，以多種製程制 造。舉例而言，每一接觸元件之曲彈簧部可由 (stemping)形成。於一實施例中，本發明之連接器係利 用半導體製程技術形成。當利用半導體製程技術形&時， 本發明之連接器可稱之作為微機電系統（MEMS)。因此， 於本發明-實施例中，本發明之連接器亦稱做一微 統柵格陣列連接器。 示 圖7A至7H例示根據本發明之一實施例，形成圖从 之連接器50的製程步驟。參照圖7A，提供一基板1〇2， 接觸元件猶彡成於其上。紐1G2可例如為—⑦晶圓或陶 究晶圓，且可包含-介電層形成於其上（未示於圖7A)。 如上所述，SOS、S0G、BPTE0S、或TE0S層之一介電層， 可形成於基板102上，以隔離基板1〇2及接觸元件。接曰著， -支標層104形成於基板1〇2上。支撐層1〇4可為一沉積 介電層，例如氧化物或氮化物層、旋轉塗佈（spin_〇n)、 介電質、聚合物、或任何其他可適合侧的材料。於一實 施例中，支撐層1G4係由化學氣相沉積製程沉積。另一實 施例中，支樓層104係由電漿氣相沉積（pi_ vapQi_ deposition，PVD)製程沉積。又另一實施例中，支撐層 104係由旋轉塗佈製程沉積。再另一實施射，當基板ι 〇2 未覆有介f層或導餘著树，支撐層可_半導體製程 常使用的氧化製程成長。4SHAW / 04002TW / NEO -20- 200532880 The connector of the present invention can be manufactured in multiple processes using different process sequences. For example, a curved spring portion of each contact element may be formed. In one embodiment, the connector of the present invention is formed using semiconductor process technology. When the semiconductor process technology is used, the connector of the present invention can be referred to as a micro-electromechanical system (MEMS). Therefore, in the embodiments of the present invention, the connector of the present invention is also referred to as a micro grid array connector. Figures 7A to 7H illustrate process steps for forming a connector 50 from a figure according to an embodiment of the present invention. Referring to FIG. 7A, a substrate 102 is provided, and a contact element is still formed thereon. The button 1G2 may be, for example, a gadolinium wafer or a ceramic wafer, and may include a dielectric layer formed thereon (not shown in FIG. 7A). As described above, a dielectric layer of one of the SOS, SOG, BPTEOS, or TEOS layers may be formed on the substrate 102 to isolate the substrate 102 and the contact elements. Next, the anchor layer 104 is formed on the substrate 102. The support layer 104 may be a deposited dielectric layer, such as an oxide or nitride layer, spin_on, a dielectric, a polymer, or any other suitable material. In one embodiment, the supporting layer 1G4 is deposited by a chemical vapor deposition process. In another embodiment, the branch floor 104 is deposited by a plasma vapor deposition (pi_vapQi_ deposition, PVD) process. In yet another embodiment, the support layer 104 is deposited by a spin coating process. In another implementation, when the substrate om2 is not covered with an interlayer or a residual tree, the support layer can be grown by an oxidation process commonly used in semiconductor processes.

支杈層104沉積後，遮罩層1〇6形成於支撐層1〇4之 4SHAW/04002TW/NEO -21 - 200532880 頂表面上。遮罩層106結合傳統微影製程，以 106定義圖案（pattern)於支樓層1〇4上。在遮罩層曰 (printed)與顯影（developed)後（圖 二丄 106A至106C之遮罩圖案，形成在支撐層1〇4之表=域 定義支撐層104受保護而免於後續钱刻之區域。又’ 參照圖7C，利用區域腿至1〇6c作為遮罩 鍋__㈣除圖案化遮 =C；^移除包含區域麵至_的遮罩圖; 露支撐區域（圖7D)。 麵=，支撺區域麵至104(:接著經歷一等_ 刻衣私。專向餘刻製程以實質上相同的爛速率 之材料。因此，等向餘刻之結果， ^固支撐區域賴至的頂角，如圖7E所示。於― 7=严刻製程為電漿蝕刻製程，使用肌、、 cf4或其他侧介電材料f _ f知化學物1 一實施例 列（βοεΊ^Γ為濕钱刻製程，例如使用緩衝氧化物钱 亥J (Β0Ε)之濕钱刻製程。 面和7F，—金屬層108形成於基板102之表 ?至104(:之表面上。金屬層108可為銅 層或銅a金層或多層金屬沉積，如鑛上銅—錄—金 Cu/Ni/Au)的鎢。—較佳實施例中，接觸元件係利用以下After the branch layer 104 is deposited, a mask layer 106 is formed on the top surface of the support layer 104 4SHAW / 04002TW / NEO -21-200532880. The mask layer 106 is combined with the traditional lithography process, and the pattern 106 is defined on the supporting floor 104. After the masking layer is printed and developed (the mask patterns of 106A to 106C in Fig. 2) are formed in the table of the support layer 104 = the domain definition support layer 104 is protected from subsequent money engraving Area. Again, referring to FIG. 7C, using the area leg to 106c as the mask pot __㈣ remove the patterned cover = C; ^ remove the mask map containing the area surface to _; expose the support area (Figure 7D). Surface =, Supporting area to 104 (: and then going through first class _ Carving clothing private. The material is designed to be engraved at substantially the same rotten rate. Therefore, the result of isotropic engraving, Apex angle, as shown in Figure 7E. At ―7 = the severe etching process is a plasma etching process, using muscle, cf4, or other side dielectric materials f _ f Knowing Chemicals 1 Example (βοεΊ ^ Γ is wet The money engraving process, for example, a wet money engraving process using buffer oxide Qian Hai J (B0E). Surface and 7F, a metal layer 108 is formed on the surface of the substrate 102 to 104 (.). The metal layer 108 may be copper Layer or copper a gold layer or multi-layer metal deposition, such as copper on the mine-copper-gold (Cu / Ni / Au) tungsten.-In the preferred embodiment, the contact element is used Lower

4SHAW/04002TW/NEO -22- 200532880 形成：一小粒銅-鈹（CuBe)合金，接著鍍以無電鎳一金 (Ni/Au) ’以提供一不氧化表面。金屬層ι〇8可以利用化 學氣相沉難程、電鑛、崎、_氣相沉積來沉積，或 其他習知金屬膜沉積技術。利用傳統微影製程，沉積一遮 罩層且圖案化為遮罩區域110A至110C。遮罩區域11〇A至 110C疋義金屬層1〇8受保護而免於後續蝕刻之區域。 接著’圖7F的結構經歷一侧製程，以移除未被遮 罩區域11GA至UGC覆蓋的金屬層。結果，形成金屬部職 至108C，如圖7G所示。金屬部醜至败之每一個， 包含-基部形成在基板1Q2上，以及一曲彈簧部形成在個 別的支禮區域（馳JL職）±。因此，每—金屬邻之 曲彈簧部採取其下支撐區域的形狀’突出於基板表i之 上’並具-曲率’當接觸—細點時，提供—擦刮動作。 局兀成逑接器，移除支撐區域1〇从至1〇4(：(圖罚）， 使用如濕侧麵等向電漿⑽或其他侧製程。若支樓 形成’可使用缓衝氧化物蝕刻雜chant) 私除支撑區域H形細㈣（free standing)接 觸元件112A至112C在基板1〇2上。 如接 哭ΐΪίΪΪ知悉本發明時’理解要製作本發明之連接 '上驟可能有料變化 刻製程的化學物和爛條件可加以修改 供所欲形狀，寻形成的接觸元件有所欲曲率支;=4SHAW / 04002TW / NEO -22- 200532880 Formation: A small grain of copper-beryllium (CuBe) alloy, followed by electroless nickel-gold (Ni / Au) 'to provide a non-oxidized surface. The metal layer ι 08 can be deposited using a chemical vapor deposition process, electric ore, sintering, vapor deposition, or other conventional metal film deposition techniques. Using a conventional lithography process, a mask layer is deposited and patterned into mask regions 110A to 110C. The masking area 11A to 110C is a region where the sense metal layer 108 is protected from subsequent etching. Next, the structure of FIG. 7F is subjected to a one-sided process to remove the metal layers not covered by the masked regions 11GA to UGC. As a result, the metal ministry is formed to 108C, as shown in FIG. 7G. Each of the metal parts is ugly to bad, including-the base part is formed on the substrate 1Q2, and a curved spring part is formed in a separate saluting area (Chi JL) ±. Therefore, the curved spring portion of each metal neighbor adopts the shape of its lower supporting area 'protruding above the substrate surface i and has a curvature'. When it comes into contact with a fine point, it provides a wiping action. The unit becomes a connector, and the support area is removed from 10 to 104 (: (penalty), using a plasma process such as a wet side or other side process. If the building is formed, buffer oxidation can be used. The etched chant removes the H-shaped free standing contact elements 112A to 112C in the support region on the substrate 102. For example, when you learn about the present invention, ‘understand that the connection of the present invention may be changed. The chemical and engraving conditions of the engraving process may be modified to provide the desired shape, and the formed contact element has a desired curvature support; =

4SHAW/04002TW/NEO -23- 200532880 造言：:接=多 接觸元件可形成為具有第一節跖^^而3，弟一群組的 可形成為具有大於或=第元件 之電或機械性質可能有其他變化，如元件 圖8Α至8Η例示根據本發明每 =接器7◦的製程步驟，至ν二= 圖^至_示製程步驟實質上綱。細，和4SHAW / 04002TW / NEO -23- 200532880 Foreword: 接 = multi-contact elements can be formed to have the first section 跖 ^^ 3, and a group of groups can be formed to have electrical or mechanical properties greater than or = the first element There may be other changes, such as the components FIGS. 8A to 8A, which illustrate the process steps of each connector according to the present invention, and ν2 = Figures ^ to _ show the outline of the process steps. Fine, and

:適當設計的遮罩圖案，可製造不同配置的接 iL: Properly designed mask pattern can make different configurations of iL

芩照圖8A 7 — a 10D 又存層以4形成於基板122上。一庐罩 層126形成於支撐層上，供定羞 ‘罩 诚枕士杏^ / 疋義形成圖5A之連接器所欲 ίί3:ί 1中，遮單區域_和126B (圖8B) 件。#起’以谷許形成包含兩個曲彈簧部的接觸元 利用遮罩區域1·和膽作為遮罩，執行 侧製程後，形成支撐區域124A和124β (圖8〇。^除 遮罩區域以絲支撐區域（圖8D)。接著，支撐區域腿 和124B經歷等向餘刻製程以使結構成形，使得支撐區域 之頂表面包含圓角（圖8E)。 一金屬層128沉積於基板；[22之表面和支撐區域】24八According to FIG. 8A 7 — a 10D, an additional layer 4 is formed on the substrate 122. A cover layer 126 is formed on the support layer for fixing shame ‘cover cover pillow pillow apricot ^ / 疋 Yi to form the connector shown in Figure 5A ί3: ί 1, covering area _ and 126B (Figure 8B) pieces. # 起 'Yu Xu formed the contact element including two curved spring parts using the mask region 1 · and the gall as a mask. After performing the side process, the support regions 124A and 124β were formed (Fig. 80. ^ Except the mask region to The wire support area (Figure 8D). Then, the support area legs and 124B undergo an isotropic process to shape the structure so that the top surface of the support area contains rounded corners (Figure 8E). A metal layer 128 is deposited on the substrate; [22 Surface and support area] 24 eight

4SHAW/04002TW/NEO -24- 200532880 表ϋ方（圖8F)。包含區域i3ga和刪之 1'· °>木&義在金屬層128上。利用遮罩區域130Α和 爾為遮罩，罐屬層128後，形成:屬:=和 於跡奶^• 屬 犯包含一基部形成4SHAW / 04002TW / NEO -24- 200532880 Table 4 (Figure 8F). Contains the area i3ga and the deleted 1 '· ° > wood & meaning on the metal layer 128. Using the masking area 130A and Er as a mask, after the cans layer 128, the formation is: genus: = and in trace milk ^ • The genus consists of a base formed

或1入:曲彈簧部形成於個別支撐區域⑽A 形狀，突出於基板表面之上，i且右ί撐域的 觸點時，提供-_動作。本 =8β的末端形成為彼此_。為完献連接H，移除支標 I;d4；ifr/24B (圖8Η)。結果，形成獨立的接觸元‘ πίί 上。在圖8Η之剖面圖中，接觸元件132的 二=!=未連接。然而’實際實作中’金屬部之基 =猎由像疋形成一環（ring)環繞接觸元件而連接，或 土部可透過形成於基板122中的導電層而連接。〆 圖9A至9H麻根據本發明之另—實施例，形成圖5a 器70的製程步驟。參照圖9A，提供包含預定義電 的-基板142。預定義電路145可包含互連的金屬 曰5他，置’像是電容或電感，這些—般形成在基板 中。本貫施例中’一頂金屬部147形成在基板142之 =表面上’與將形成的接觸元件連接。為形成所欲接觸元 件’—支撐層144和一遮罩層146形成在基板142之頂表 面上。 圖 製程步驟以類似上述參照圖从至8H的方式進行。Or 1 input: The curved spring part is formed in the shape of the individual support area ⑽A, protruding above the surface of the substrate, and when the contact of the right support area is provided,-action is provided. The ends of Ben = 8β are formed as each other. To complete the connection H, remove the support I; d4; ifr / 24B (Figure 8Η). As a result, an independent contact element ‘πίί is formed. In the cross-sectional view of FIG. 8A, the two of the contact elements 132 =! = Are not connected. However, in actual implementation, the base of the metal part is connected by a ring formed around the contact element, or the earth part may be connected through a conductive layer formed in the substrate 122. 〆 FIGS. 9A to 9H are steps of forming the apparatus 70 of FIG. 5a according to another embodiment of the present invention. Referring to FIG. 9A, a -substrate 142 including a predefined electric power is provided. The predefined circuit 145 may include interconnected metals, such as capacitors or inductors, which are generally formed in a substrate. In this embodiment, a top metal portion 147 is formed on the surface of the substrate 142 and is connected to a contact element to be formed. To form a desired contact element ', a support layer 144 and a mask layer 146 are formed on the top surface of the substrate 142. The drawing process steps are performed in a manner similar to the above-mentioned reference drawing from to 8H.

4SHAW/04002TW/NEO -25- 200532880 案=遮罩層146 (圖9B)，而接著侧支樓層144，以形成 支撐區域144A #144B (圖9G)。移除鮮區域以暴露支 撐區域（圖9D)。接著，執行等向韻刻製程，削圓支撑區 ^或144A和144B的頂角（圖9E)。沉積一金屬層148在基 板142之表面上以及支撐區域上方（圖9F)。金屬層148 心成於頂金屬部147上方。結果，金屬層148電連接至電 路 14ίΐ ό 藉由一遮罩層15〇圖案化金屬層148 (圖9F)，並經 刻製程。因此，形成的金屬部腦和應（圖gG) j3彼此的末端。移除支撐部舰和ΐ44β，以完成 接觸7G件152之製作（圖9H)。 成的接觸元件152係電連接電路145。以此方 二ιπ X明之連接器可提供額外的功能性。舉例而言，電 ㈣或^增置，胸彡成在基板 -步ί:接:ί:，作電路製程的-部分提供進 和底的，—連續電路徑形成於接觸元件脱 連續或阻^不匹配m几件和相闕電路間沒有金屬不 術連接哭巾，# smateh)。某些先前技 社槎m L拉，使益接1形成接觸元件。'然而，這樣的 、為致接觸元件和底下的金屬連接間之介面=4SHAW / 04002TW / NEO -25- 200532880 case = mask layer 146 (Fig. 9B), and then the side branch floor 144 to form the support area 144A # 144B (Fig. 9G). Remove the fresh area to expose the support area (Figure 9D). Next, an isotropic rhyme process is performed to round the top corners of the support area ^ or 144A and 144B (Fig. 9E). A metal layer 148 is deposited on the surface of the substrate 142 and above the support area (Fig. 9F). The metal layer 148 is formed over the top metal portion 147. As a result, the metal layer 148 is electrically connected to the circuit 14, and the metal layer 148 is patterned by a masking layer 15 (FIG. 9F), and is etched. Therefore, the metal part of the brain and the end of the stress (Figure gG) j3 are formed. Remove the support ship and ΐ44β to complete the production of the contact 7G piece 152 (Figure 9H). The formed contact element 152 is an electrical connection circuit 145. In this way, the X2 connector provides additional functionality. For example, the electric circuit or the additional circuit is formed on the substrate-step ί: connected: ί, for the circuit process-part of the supply and bottom, a continuous electrical path is formed when the contact element is discontinuous or blocked There is no metal inoperative connection between the mismatched pieces and the corresponding circuit, #smateh). Some prior art companies 槎 m L pull to make the contact 1 form a contact element. 'However, this is the interface between the contact element and the underlying metal connection =

4SHAW/04002TW/NEO -26 - 200532880 (fT)材料和剖面不連續、以及阻抗不匹配，而導致 不』^的性以及不良的高頻操作。本發 元 統之限制，並且使用本發明之接觸:: 建的連接°°可用於高要求的高頻和高性能應用中。 如上所：4 ’當本㈣之連接||的鋪元件使用半 ^程形成，可形成具有多_械和雜質的_元件。特 別地，使用轉體製程步驟容許建立—連接器，而U 不同機械及/或電性質的接觸元件。 /、 縮一 n，f康本發明之另一方面，本發明之連接器之接 觸兀件具有不同操作祕。亦即，連㈣包含異質 (heterogeneous )接觸元件，其中可選擇接觸元择 作特性，以滿足想要顧的要求。本說明中，—接觸元: 的操作特性意指接觸元件的電、機械和可#度性質。 納入具不同的電及/或機械性質的接觸元件，本發明^ 接器可滿足高性能互連應用對電、機械和可靠度^嚴厲需 求0 一根據本發明之-實施例，可為―接觸元件或—組接觸 兀件特別地設相下機酿質，以達某麵欲操作特性。 第一，可選擇每一接觸元件之接觸力，以確保不管是一些 接觸元件的低阻值連接或連接器的低整體接觸力。第二二 接觸元件卩过電性要求操作的每一接觸元件之彈性工作範 圍’在接觸元件間是可以變化的。第三，每一接觸元件之4SHAW / 04002TW / NEO -26-200532880 (fT) discontinuities in materials and profiles, and impedance mismatches, resulting in poor performance and poor high-frequency operation. The limitations of this system and the use of the contacts of the present invention :: The connection °° can be used in high-frequency and high-performance applications with high requirements. As mentioned above: 4 ′ When the connection element of the local connection || is formed using a half-step process, an element with multiple devices and impurities can be formed. In particular, the use of transduction process steps allows the creation of a -connector, while U is a contact element with different mechanical and / or electrical properties. /, Shrinking n, f Kang Another aspect of the present invention, the contact element of the connector of the present invention has different operation secrets. That is, the flail contains heterogeneous contact elements, in which the contact element can be selected as a characteristic to meet the requirements of the desired. In this description, the operating characteristics of-contact element: means the electrical, mechanical, and mechanical properties of the contact element. Including contact elements with different electrical and / or mechanical properties, the connector of the present invention can meet the electrical, mechanical, and reliability requirements of high-performance interconnect applications. Strict requirements 0-According to an embodiment of the present invention, it can be-contact Components or groups of contact elements are specifically designed to be processed under the machine to achieve the desired operating characteristics. First, the contact force of each contact element can be selected to ensure the low overall resistance of some contact elements or the low overall contact force of the connector. The second contact element's elastic working range of each contact element whose electrical properties require operation can be changed between the contact elements. Third, every contact element

4SHAW/04002TW/NEO -27- 200532880 直立高度可以變化。第四， 以變化。 接觸元件之節距或水平尺寸可 根據本發明另些實施例，可為一接觸元件或—組接 元件特別地設計電性質，以達某些所欲操作特性。舉例 言’、每一接觸元件之直流阻值（DC resistance)、阻抗、 電感（inductance)和載流能力在接觸元件間可變化 此，一群組的接觸元件可設計成有較低阻值，或一群組 接觸元件可設計成有低電感。 '' ' 士部分應用巾’接觸元件可歸為—接觸元件獲得所 欲可靠度性質’或為-組接觸元件達某些所欲操作特性。 舉例而言，接觸元件可設計成在環境應力（例如熱循環、 熱震和振動[taal shock and vibrati〇n]、腐、 和座度顧）後，顯核或最小雜能下降。接觸元件亦 可設計成達到鮮鮮定義的其他可#度要求 產業聯盟（EIA)所定義的。 书卞 ，本發明之連接財的接觸元件製造為微機電系統 栅W車列，翻讀之機械和電躲 數而修改。第-’可選擇接觸元件之曲彈簧部的厚 f =欲接觸力。舉例而言’—般大約3〇微米的厚度產 ，克或更”級的低接觸力，而對相同位 (dlSPlaCement) ’ 40微米的凸緣（flange)厚度產生20 克的較高義力。也可卿曲科部的寬度、長度和形4SHAW / 04002TW / NEO -27- 200532880 Standing height can be changed. Fourth, change. The pitch or horizontal size of the contact elements may be specifically designed according to other embodiments of the present invention for a contact element or an assembly element to achieve certain desired operating characteristics. For example, the DC resistance, impedance, inductance, and current carrying capacity of each contact element can be changed between the contact elements. A group of contact elements can be designed to have a lower resistance value. Or a group of contact elements can be designed to have low inductance. '' 'Partial application towels' contact elements can be classified as-contact elements to obtain desired reliability properties' or-contact elements to achieve certain desired operating characteristics. For example, the contact element can be designed to reduce the apparent nucleus or minimum miscellaneous energy after environmental stresses (such as thermal cycling, thermal shock and vibration [taal shock and vibration], decay, and seating). The contact elements can also be designed to meet other freshly defined requirements as defined by the Industry Alliance (EIA). According to the book, the contact element of the present invention is manufactured as a micro-electromechanical system grid w train, and it is modified by reading the mechanical and electrical numbers. The thickness of the curved spring portion of the contact element can be selected as f '= the contact force to be contacted. For example, a thickness of about 30 micrometers is generally produced, with a low contact force of the order of grams or more, while a flange thickness of 40 micrometers at the same position (dlSPlaCement) produces a higher force of 20 grams. Also The width, length, and shape of Keqing Quke Department

4SHAW/04002TW/NEO -28- 200532880 狀，以產生所欲接觸力。 第可述擇接觸元件中要包含的曲彈菩部數量，以 ί ΓΪΓ力、所欲載流能力和所欲接觸阻值。舉例而 二:Ϊ黃部的數目大約加倍接觸力和載流能力，而 大約減少一半接觸阻值。. 第三’可選擇特殊的金屬成分和處理，以獲得所 性和導電性特性。舉例而言’銅合金，例如銅-皱，可用 以提供機械彈性和電料性間的良好取捨。選替地，可使 用金屬多層提供優越的機械與電性_者。—實施例中， -接觸兀件使用鈦鏡以銅、接著錢鎳、最後鍍金，而形成 鈦/銅/鎳/金多層。鈦會提供優越的彈性與高的機械耐久 性（durability)，而銅提供優越的導電性，鎳層和金層 提供優越的抗腐餘性（corrosion resistance)。最後: 不同的金屬沉積技術’例如電魏鱗 處理技術，如合金、退火以及其他冶金技術，== 觸元件特別設計所欲特性。 第四，可没计曲彈黃部之曲率，以產生某種電和機械 性質。亦可變化曲彈簧部之高度、或從基部突出的量，以 產生所欲電和機械性質。 圖10A和10B為根據本發明之另一實施例之一連接器 的剖面圖。參照圖10A，一連接器22〇包含一第一組接觸4SHAW / 04002TW / NEO -28- 200532880 to produce the desired contact force. The first is to select the number of curved elastic parts to be included in the contact element, with Γ ΓΪΓ force, desired current carrying capacity, and desired contact resistance. For example, two: The number of yellow parts approximately doubles the contact force and current carrying capacity, while reducing the contact resistance by about half. Thirdly, special metal components and treatments can be selected to obtain the desired properties of conductivity and conductivity. For example, a 'copper alloy, such as copper-wrinkle, can be used to provide a good trade-off between mechanical elasticity and electrical properties. Alternatively, metal multilayers can be used to provide superior mechanical and electrical properties. -In the embodiment,-the contact element is formed of a titanium / copper / nickel / gold multilayer by using a titanium mirror with copper, followed by nickel, and finally gold-plated. Titanium will provide superior elasticity and high mechanical durability, copper will provide superior electrical conductivity, and nickel and gold layers will provide superior corrosion resistance. Finally: Different metal deposition techniques, such as electro-wet scale processing techniques, such as alloying, annealing, and other metallurgical techniques, == the characteristics of the contact element are specifically designed. Fourth, the curvature of the yellow part of the bomb can be ignored to produce certain electrical and mechanical properties. It is also possible to vary the height of the curved spring portion, or the amount of projection from the base portion, to produce the desired electrical and mechanical properties. 10A and 10B are cross-sectional views of a connector according to another embodiment of the present invention. Referring to FIG. 10A, a connector 22o includes a first set of contacts

4SHAW/04002TW/NEO -29- 200532880 兀件224、226和228 ’以及一第二組接觸元件225和227， 皆形成在基板222上。第—組接觸元件224、226和228 具有-曲彈簧部長於第二組_元件225和227之曲彈菩 部。換言之，接觸元件224、226和228之曲彈簧部的高 度大於接觸元件225和227之曲彈簧部的高度。 藉由提供具不同高度之接觸元件，本發明之連接哭 =可有利地應用於r熱調換（h〇t_sw卿⑽」應用中。 …調換意指當裝置欲連接之紐為電活動（eleetricaiiy active) _ ’裝設或拆卸—半導體裝置，而不傷害此半導 體裝置或系統。於熱調換操作中，不同電源和接地接腳及 域接腳必須依序且不同時的連接和切斷，以避免傷害裝 置或系統。藉由使用包含不同高度的接觸元件的連接器， 較南的接觸元件在較短接觸元件前，可用以製造電連接。 乂此方式’可製造所欲電連接順序，以達熱調換操作。 如圖10A所示，連接器22〇欲連接至一半導體 體裝置測包含形成其上的金屬墊232。當施加 -杜°99/1 F接合連接器220與半導體裝置230，高接觸 2 咖和228可首先接觸個別的金屬塾232，而較 Γ 227保持未連接。接觸元件224、226 聊。心二電連f至半導體裝置230之電源與接地接 之較偏力F (圖陶，連接至信號接腳 5=:兀=27，則可連接裝置230上個別 〃屬232。因為本㈣之接觸元件具有大雅工作範4SHAW / 04002TW / NEO -29- 200532880 The elements 224, 226, and 228 'and a second set of contact elements 225 and 227 are formed on the substrate 222. The first group of contact elements 224, 226, and 228 have a curved spring head in the second group of elements 225 and 227. In other words, the height of the curved spring portions of the contact elements 224, 226, and 228 is greater than the height of the curved spring portions of the contact elements 225 and 227. By providing contact elements with different heights, the connection cry of the present invention can be favorably applied to r thermal swap (h0t_sw ⑽ ⑽ 应用) application.… Replacement means that when the device to be connected is electrically active (eleetricaiiy active ) _ 'Installation or disassembly—semiconductor device without harming the semiconductor device or system. In the hot swap operation, different power and ground pins and domain pins must be connected and cut off sequentially and at the same time to avoid Damage devices or systems. By using connectors that include contact elements of different heights, souther contact elements can be used to make electrical connections before shorter contact elements. 乂 This way 'the desired electrical connection sequence can be made to achieve Hot swapping operation. As shown in FIG. 10A, the connector 22 is to be connected to a semiconductor device including a metal pad 232 formed thereon. When applying -Du ° 99/1 F to join the connector 220 and the semiconductor device 230, the height Contact 2 and 228 can first contact the individual metal 塾 232, and remain unconnected than Γ 227. The contact elements 224 and 226 talk. The power of the second electrical connection f to the semiconductor device 230 and the ground are relatively biased. F (Figure pottery, connected to the signal pin 5 =: Wu = 27, you can connect some of the devices on the device 230 to 232. Because the contact elements of this unit have Daya working range

4SHAW/04002TW/NEO -30- 200532880 圍’第一組接觸元件可比第-彡以 一 不旦维她1 接觸兀件進一步壓縮，而 不衫響接觸70件之完整性（加敬办） = 器220使半導體裝置230能熱調換操作。；妾 接觸根Ϊ本㈣之另—方面，—親11具雜地平面，且 接觸兀件之阻抗可藉以下方式控制 觸元件與接地平面間的距離，@产㈣號接腳之接 一 T回门日7此離或一 k唬接腳之接觸元件盥 :接^^接觸元件_蹲。圖n為根據本發明: =狀-連的剖關，此連接器包含—接地平面， 文口k唬完整性以及控制接觸元件阻抗。參照圖U，一連 接器250包含一接觸元件254B，其欲連接至一半導體裝置 上的一信號接腳。連接器250更包含接觸元件254C^^欲 連接至半導體裝置之接地電位。連接器250包含-接&平 面255，其形成於基板252令。接地平面255可形成於基 ^ 252之頂表面上，或嵌入於基板252中。圖I〗中，顯 =接觸元件254A與254C和接地平面255間的連接。實際 =作中，接觸元件254A與254C可透過基板252表面上^ 金屬連接，或透過嵌於基板252中的金屬連接，盥接地平 面255連接。 ，、 ^連接杰250中包含接地平面255，具有改善透過連接 :^0連接之交流電信號的信號完整性的效果。特別地， 隨著積體電路操作於愈來愈高的頻率，封裝接腳（lead) 數目隨接腳的節距下降而增加，改善用於互連此類積體電 路之連接器中的信號完整性的能力變得更重要。根據本發4SHAW / 04002TW / NEO -30- 200532880 The first group of contact elements can be further compressed than the first contact element, and the integrity of 70 contact elements without contact (plus respect) = device 220 enables the semiconductor device 230 to perform a hot swap operation. ; Contact with the root of the root of the other-aspects,-pro 11 miscellaneous ground plane, and the impedance of the contact element can control the distance between the touch element and the ground plane by the following methods, @ 产 ㈣ 号 针 针 的 接 一 T On the return day 7 this contact or a k-kick contact element washes: then ^^ contact element _ squat. FIG. N is a cross-section of a connector according to the present invention. The connector includes a ground plane, a complete structure, and control contact impedance. Referring to FIG. U, a connector 250 includes a contact element 254B, which is to be connected to a signal pin on a semiconductor device. The connector 250 further includes a contact element 254C, which is a ground potential to be connected to the semiconductor device. The connector 250 includes a -connect & plane 255 formed on the substrate 252. The ground plane 255 may be formed on the top surface of the base 252 or embedded in the substrate 252. In Figure I, the connection between the contact elements 254A and 254C and the ground plane 255 is shown. In practice, the contact elements 254A and 254C can be connected through a metal connection on the surface of the substrate 252, or through a metal connection embedded in the substrate 252, and connected to the ground plane 255. The connection plane 250 includes a ground plane 255, which has the effect of improving the signal integrity of the AC signal connected through the connection plane ^ 0. In particular, as integrated circuits operate at higher and higher frequencies, the number of package leads increases as the pitch of the pins decreases, improving the signals in connectors used to interconnect such integrated circuits The ability to complete becomes more important. According to this

4SHAW/04002TW/NEO -31 - 200532880 明，連接為250包含接地平面255，其作用以降低雜訊以 及改善連接器之信號完整性。此外，圖U所示配置中， L號接腳之接觸元件254B和接地電位之接觸元件254A 與254C間的距離G可變化，為接觸元件254B獲得所欲阻 抗。可包含元件257A、257B和257C以進一步控制連接器 的電磁放射（emission)和斥拒（rejeetiQn)特性。°° 圖12例示本發明連接器之另一實施例，其中使用一 · 對接觸元件262和264以耦合至一對差動信號 (differential signals)。本實施例中，接觸元件ϋ 和264各自形成為包含分離的基部261和263。以此方 包含接觸元件脱和264之連接器可用以接觸包含 動信號的半導體裝置。 根=發明另一方面’―連接器包含埋 d1SslpatiQn)結構’以 ^的散熱能力。舉例而言，當接合電 ，呢)可導致接觸元件處的溫度上升20度或更多。根 ^觸兀件I度上升。舉例而言，# 中的埋式雜賴，溫度上升的量可敍ig度或 圖13例示根據本發明一實施例 連接器。參關13，連雜包含接觸4SHAW / 04002TW / NEO -31-200532880 indicates that the connection of 250 includes the ground plane 255, which functions to reduce noise and improve the signal integrity of the connector. In addition, in the configuration shown in FIG. U, the distance G between the contact element 254B of the L pin and the contact elements 254A and 254C of the ground potential can be changed to obtain the desired impedance for the contact element 254B. Components 257A, 257B, and 257C may be included to further control the electromagnetic emission and rejeetiQn characteristics of the connector. °° FIG. 12 illustrates another embodiment of the connector of the present invention in which a pair of contact elements 262 and 264 are used to couple to a pair of differential signals. In the present embodiment, the contact elements ϋ and 264 are each formed to include separate base portions 261 and 263. In this way, a connector including contact element disconnection and 264 can be used to contact a semiconductor device including a motion signal. Root = another aspect of the invention '-the connector contains a buried d1SslpatiQn) structure' to dissipate heat. For example, when bonding electricity, it can cause the temperature at the contact element to rise by 20 degrees or more. The root element rises 1 degree. For example, in the embedded type in #, the amount of temperature rise can be described in ig degrees or FIG. 13 illustrates a connector according to an embodiment of the present invention. Reference 13, Contains contact

4SHAW/04002TW/NEO -32 - 200532880 面上。在基板饥之製軸 ==:=:。=_供 U刀此。於一貫施例中，埶導孚 月曰（filled epoxy)形成，其為非導電性，而因 接觸^在基板272中並連接至接転件274A至274d^ 任何包路。操作中’當接觸元_合至—半導體裝置 經歷焦耳加熱時，熱導平面咖散去接觸元件產生的熱 根據，發明再另—方面，—連接器包含— _元件。圖14例示根據本發明之—實施二 _接觸元件的連接器期。參 =一第一接觸元件320及—第二接觸元件340形成1 表Γΐ。接觸元件32Q和34(1形成得彼此鄰近但 本貫施例中，接觸元件32()包含—基部322形 士匕匕:-孔（aperture)的外環’而接觸元件340包含 二^ 342，於此開口内。每—接觸元件32〇和34〇包 3 =物黃部。具體地，接觸元件32q =^ΓΓΓ2散開。曲彈菁部324形成為。 邱番Ϊ觸门兀件32Q之曲彈簧部不和接觸元件34G之曲彈箬 ^觸元件咖和接觸元件34G為電氣隔離。 如此構成後’連接器·可用以互連—半導體裝置上的一4SHAW / 04002TW / NEO -32-200532880 surface. The axis of hunger on the substrate ==: = :. = _ For U knife this. In the conventional embodiment, a filled epoxy is formed, which is non-conductive, and is in contact with the substrate 272 and connected to the connecting members 274A to 274d due to contact. In operation ’when the contact element is turned on—the semiconductor device undergoes Joule heating, the thermally conductive flat surface dissipates the heat generated by the contact element. According to another aspect of the invention, the connector includes a component. FIG. 14 illustrates a connector phase of a second implementation of a contact element according to the present invention. The first contact element 320 and the second contact element 340 form a table Γΐ. The contact elements 32Q and 34 (1 are formed adjacent to each other but in the present embodiment, the contact element 32 () includes a base 322-shaped dagger: an outer ring of an aperture and the contact element 340 includes two 342, In this opening. Each of the contact elements 32o and 34o packs 3 = the yellow part. Specifically, the contact elements 32q = ^ ΓΓΓ2 are scattered. The curved elastic part 324 is formed. The spring part is not electrically isolated from the contact element 34G. The contact element and the contact element 34G are electrically isolated. After this configuration, the 'connector · can be used for interconnection—a semiconductor device

4SHAW/04002TW/NEO -33- 200532880 電位 同軸連接。—般而言，外部的接觸元辆馬合至 連接，而内部的接觸元件輕合至—信號連接，例如 號。本發明之連接器的-個特別優點是 可用以提供小尺寸電子元件的同軸^ 接益甚至 根據本發㈣H連接 j-導電黏著層於接觸元件之基部中，以42=2 μ之黏著。圖15A至15H例示根據本發明另，=對 =，-連接H _之製程步驟，7A至7H ’〜4SHAW / 04002TW / NEO -33- 200532880 Potential Coaxial connection. In general, the external contact elements are closed to the connection, while the internal contact elements are lightly connected to the-signal connection, such as No. A special advantage of the connector of the present invention is that it can be used to provide a coaxial ^ connection of small-sized electronic components. Even according to the present invention, the j-conductive adhesive layer is connected to the base of the contact component with 42 = 2 μ adhesion. 15A to 15H illustrate the process steps according to the present invention, ===,-connecting H _, 7A to 7H ′ ~

中職元件給予類似編號，以簡化討論。 15H 參照圖15A，提供一其如1n9 上。美;’、 土板02，接觸70件將形成於其 ~ίί Γ $晶®或_晶圓’且可包含一介電 二美ίϋ ΐΓ®15Α中）。—導電黏著層⑽沉積 黏著層Η)3可為m介::於介電層頂上。導電 :物為基礎者劑，或其他導電黏著劑 二 i，二:=1:層广上。支禮層104可為沉積的介ΐ 任何輸心獅，或 之頂表面:支罩層106形成於支撐層1G4 罩層⑽定義1;於支===:Secondary vocational components are similarly numbered to simplify discussions. 15H Referring to FIG. 15A, it is provided as in 1n9. Beauty; ’, soil plate 02, contacting 70 pieces will be formed in it ~ ίί Γ $ 晶 ® or _wafer’ and may contain a dielectric Ermei ϋ ΐΓ®15Α). —Conductive Adhesive Layer ⑽ Deposition Adhesive Layer Η) 3 can be m-dielectric :: on top of the dielectric layer. Conductive: the base is the agent, or other conductive adhesives II, II: = 1: layer wide. The support layer 104 can be a deposited medium, any lion, or the top surface: the support cover layer 106 is formed on the support layer 1G4 cover layer. Definition 1; Yu branch ===:

4SHAW/04002TW/NEO -34- 200532880 =(圖15B)，包含區域i至雛之遮罩圖案 續银=4之表面上’定義支稽層ϊ〇4受保護而狀後 -非她域_至贏縣遮罩，執行 非寺向银刻製程。非等向飾丨制 ‘等二製 非等向^做後因此’ 至104C形成在導雷仍在。而支撐區域祖 106C的逆策fi茔^ ^ 。接著移除包含區域106A至 的遮罩圖案，以暴露支撐區域（圖15D)。 刻製域104A至1〇4C接著經歷等向錄 疋，削圓支樓區域職至職的頂角如圖==果 接著，參照圖15F，一金屬> im + r ；〇δ =於—較佳實施例中，接觸元件_==1 叔銅-鈹合金接著鑛上無電 下^成.一小 金屬層⑽可利用化學氣相沉積製 氣相沉積來沉積，或使用1侦如U鑛、減鐵、物理 傳統微影製程，、沉浐/罢、、、、至膜沉積技術。利用 4-遮罩層且圖案化為遮罩區域舰4SHAW / 04002TW / NEO -34- 200532880 = (Figure 15B), including the mask pattern from the area i to the chick continued on the surface of the silver = 4 'defining the branch layer ϊ〇4 after being protected-not her domain _ to Win the county mask and execute the non-temple silver carving process. Non-isotropic decoration system ‘equal two-system non-isotropic ^ after doing so’ to 104C formation is still in the mine guidance. And the countermeasures of the support area ancestor 106C ^ ^. The mask pattern containing areas 106A to is then removed to expose the support area (Figure 15D). The engraved domains 104A to 104C then went through the isotropic recording, rounding the top corner of the branch office area as shown in the figure below == Then, referring to FIG. 15F, a metal > im + r; 〇δ = 于 — In a preferred embodiment, the contact element is _ == 1 and the tertiary copper-beryllium alloy is formed without electricity on the ore. A small metal layer can be deposited by chemical vapor deposition or vapor deposition, or by using a detection method such as U ore , Iron reduction, physics traditional lithography process, immersion / strike ,,,, and film deposition technology. Use a 4-mask layer and pattern it into a mask area ship

4SHAW/04002TW/NEO -35- 200532880 至hoc。遮罩區域110A至110C定義金屬層1〇8受保譁 於後續I虫刻之區域。 又 接著，圖15F中的結構經歷-_製程，以移除 遮罩區域ΠΟΑ至110C覆蓋的金屬層和導電黏著層“士 果’形成金屬部108Α至108C和導電黏著部丨〇3Α至丨〇3f 如圖15G所示。每一金屬部108A至1〇8c包含一美 導電黏著部上，以及-曲彈簧部形成在二= 部採取底下支撐區域的形狀，突出於基板表=曲= 二，’當用來接觸-接觸點時，提供—擦刮動作。^ 一孟屬部之基部依附於個別的導電黏著部， 用以強化每-基部對基板102之黏著電黏者部作 為产成連接器，移除支撐區域_至聰（圖， Π由或料向f漿_ «絲刻製 吏用氧化層形成，可使用緩衝氧化物蝕刻劑 二支樓區域。、絲，獨立的接觸树u 如此形成之接觸元件⑽至聰之= 立牙、上包§ 一延伸基部。如圖15H所示，每一 =用以延伸基部之表面積，以提供更多表面積將接觸树 又付於基板1G2。以此方式’可改善接觸元件之可靠度。 以上詳細_餘麻本發鴨定實_ 欲 限制。本發明範，㈣多修改與變化是可能的。舉例^4SHAW / 04002TW / NEO -35- 200532880 to hoc. The mask areas 110A to 110C define areas in which the metal layer 108 is protected against subsequent insults. Then, the structure in FIG. 15F is subjected to a -_ process to remove the metal layer and the conductive adhesive layer "Shi Guo" covered by the mask area ΠOA to 110C to form the metal portions 108A to 108C and the conductive adhesive portions 丨 〇3Α to 丨 〇 3f is shown in FIG. 15G. Each of the metal portions 108A to 108c includes a conductive adhesive portion of the United States, and the -curved spring portion is formed at the second portion to take the shape of the bottom support area, protruding from the substrate surface = curved = two, 'When used for contact-contact point, provide-scratch action. ^ The base of a mongolian part is attached to an individual conductive adhesive part to strengthen the adhesive part of each base to the substrate 102 as a production connection. Device, remove the support area _ Zhi Cong (Figure, Π is made from the material to the pulp «« wire engraving system is formed with an oxide layer, you can use the buffer oxide etchant area of the two branches., Wire, independent contact tree u The contact elements formed in this way are Congzhi = standing teeth, upper bag § an extension base. As shown in FIG. 15H, each = is used to extend the surface area of the base to provide more surface area and the contact tree is again applied to the substrate 1G2. In this way, the reliability of the contact element can be improved. Details Ma _ I _ present any real intended to limit the duck. Mingfan present, (iv) multi modifications and variations are possible. For example ^

4SHAW/04002TW/NEO -36 - 200532880 此技藝者會理解提及_結構之「頂」和「底」表面 3::二提及「頂J,和「底」只用來參照結構之兩個 ^ Α ^ 。此外，當上述說明提及使用本發明之連接 t連接至:¾圓、至基板栅格陣列封裝和至球柵格陣列封 熟此技喊會轉，本發明之連接器可用作使用塾或 ς板（land)或焊料球為電連接或接觸點的任何類型區域 二之互連。只為例示提及特定麵欲連接半導體裂置。 本务明由所附申請專利範圍定義。 【圖式簡單說明】 圖1例示-接觸元件，用以接合基板上的金屬墊。 圖2A例示一接觸元件，用以接觸焊料球。 圖2B和圖2C例示附接浮料球至基板之金屬墊的結 果〇 · 圖3A和3B為根據本發明之一實施例，顯示連接器之 刮面圖。 圖4A和4B為剖面圖 不同半導體裝置。 例示使用圖3A之連接器接合 圖5A和5B例示根據本發明之另一實施例之連接器。 圖6A和6B例示根據本發明之另一實施例之連接器。4SHAW / 04002TW / NEO -36-200532880 This artist will understand the reference to the "top" and "bottom" surfaces of the structure 3: 2: The second reference to "top J," and "bottom" is only used to refer to the two of the structure ^ Α ^. In addition, when the above description refers to the use of the connection t of the present invention to connect to: ¾ circle, to the substrate grid array package and to the ball grid array package, the technology will turn, the connector of the present invention can be used as a 塾 or A land or solder ball is any type of area 2 interconnect that is an electrical connection or contact. It is mentioned for the sake of illustration only that a particular face is to be connected to a semiconductor split. This matter is defined by the scope of the attached patent application. [Brief Description of the Drawings] FIG. 1 illustrates a contact element for bonding a metal pad on a substrate. FIG. 2A illustrates a contact element for contacting a solder ball. 2B and 2C illustrate the results of attaching a float ball to a metal pad of a substrate. Figs. 3A and 3B are scratched views showing a connector according to an embodiment of the present invention. 4A and 4B are cross-sectional views of different semiconductor devices. Illustrating Joining Using the Connector of Figure 3A Figures 5A and 5B illustrate a connector according to another embodiment of the invention. 6A and 6B illustrate a connector according to another embodiment of the present invention.

之遠7H例示根縣伽之—實麵，形成圖3A 之連接為的製程步驟。 一實施例，形成圖Zhiyuan 7H exemplifies the manufacturing process of the Jiaxian-Solid surface of Genxian, forming the connection behavior of FIG. 3A. An embodiment to form a diagram

圖8A至8H例示根據本發明之 之連接器的製程步驟。 圖9A至9H例示根據本發明之另一實施例，形成圖5八8A to 8H illustrate process steps of a connector according to the present invention. 9A to 9H illustrate another embodiment of the present invention, forming FIGS.

4S H AW/04002TW/N EO -37- 200532880 之連接器的製程步驟。 图10A和log為根據本發明之一 的剖面圖。 μ&例之一連接器 圖11為根據本發明一每 此連接器包含供改善信 ^ 的剖面圖’ 抗之接地平Φ。 °以及供控制接觸元件阻 圖12例示本發明連接哭 ^ . 對接觸元_合至—對差其中使用- 面之=3|/物根據本㈣之—實_，顯秘含熱導平 圖14例示根據本發明一每 觸元件的連接ϋ。 a例’顯示包含同軸接 圖15A至15H例示根據本發明之每 接器陣列之製程步驟。 只知例，形成連 圖式元件符號說明 1〇連接器 16金屬墊 22焊料球 50連接器 55A基部 62基板 72基板 75B曲彈簧部 84焊料球 12接觸元件 18膜 24基板 52基板 55B曲彈簧部 64金屬墊 74接觸元件 75C曲彈簧部 92基板 14基板 20基板 26金屬塾 54接觸元件 60半導體裝置 7〇連接器 75A基部 8〇半導體裝置 93接觸元件4S H AW / 04002TW / N EO -37- 200532880 connector manufacturing steps. 10A and log are cross-sectional views according to one of the present invention. μ & Example of a connector FIG. 11 is a cross-sectional view of the connector according to the present invention for improving the signal resistance ground plane Φ. ° and the resistance element for controlling the contact element 12 illustrates the connection of the present invention ^. For the contact element _come to-the difference which is used-the surface = 3 | 14 illustrates a connection pad of a per-touch element according to the present invention. Example a 'shows including coaxial connectors Figures 15A to 15H illustrate the process steps of each connector array according to the present invention. I only know the example, forming a picture element description 10 connector 16 metal pad 22 solder ball 50 connector 55A base 62 substrate 72 substrate 75B curved spring portion 84 solder ball 12 contact element 18 film 24 substrate 52 substrate 55B curved spring portion 64 metal pad 74 contact element 75C curved spring portion 92 substrate 14 substrate 20 substrate 26 metal 塾 54 contact element 60 semiconductor device 70 connector 75A base 80 semiconductor device 93 contact element

4SHAW/04002TW/NEO -38 - 200532880 94B第一曲彈簧部 95接觸元件 97B第一曲彈簧部 103導電黏著層 104支撐層 106遮罩層 108金屬層 230半導體裝置 252基板 255接地平面 261，263 基部 270連接器 94A基部 94C第二曲彈簧部 96基板 97A基部 122基板 124A，124B支撐區域 126A，126B遮罩區域 128A，128B金屬部 132接觸元件142基板 144A，144B支樓區域 146遮罩層 147頂金屬部 148A，148B金屬部 152接觸元件220連接器 224, 226，228第一組接觸元件 97C弟二曲彈餐部1〇2基板 103A，103B，103C導電黏著部 104A，104B，104C 支撐區域 106A，106B，106C 區域 108A，108B，108C 金屬部 110A，110B，110C 遮罩區域 112A，112B，112C 接觸元件 124支撐層 126遮罩層 128金屬層 130A，130B 區域 144支撐層 145預定義電路 148金屬層 、组接觸元件 250連接器 150遮罩層 222基板 225，227 第 232金屬墊 254A，254B，254C 接觸元件 257A，257B，257C 元件 262，264接觸元件 272基板 274A，274B，274C，274D 接觸元件4SHAW / 04002TW / NEO -38-200532880 94B First curved spring portion 95 contact element 97B first curved spring portion 103 conductive adhesive layer 104 support layer 106 mask layer 108 metal layer 230 semiconductor device 252 substrate 255 ground plane 261, 263 base 270 connector 94A base 94C second curved spring portion 96 substrate 97A base 122 substrate 124A, 124B support area 126A, 126B mask area 128A, 128B metal portion 132 contact element 142 substrate 144A, 144B tower area 146 cover layer 147 top Metal parts 148A, 148B Metal parts 152 Contact elements 220 Connectors 224, 226, 228 The first group of contact elements 97C Di Erqu Dinning part 102 Board 103A, 103B, 103C Conductive adhesive parts 104A, 104B, 104C Support area 106A , 106B, 106C area 108A, 108B, 108C metal part 110A, 110B, 110C mask area 112A, 112B, 112C contact element 124 support layer 126 mask layer 128 metal layer 130A, 130B area 144 support layer 145 predefined circuit 148 metal Layer, group contact element 250 connector 150 mask layer 222 substrate 225, 227th 232th metal pad 254A, 254B, 254C contact element 257A, 257B, 257C element 262, 264 contact element 272 substrate 274A, 274B, 274C, 274D contacting element

4SHAW/04002TW/NEO -39- 200532880 277熱導平面 322基部 342部 300連接器 320第一接觸元件 324曲彈簧部340第二接觸元件 344A，344B曲彈簧部4SHAW / 04002TW / NEO -39- 200532880 277 Thermal Conduction Plane 322 Base 342 300 Connector 320 First Contact Element 324 Curve Spring Part 340 Second Contact Element 344A, 344B Curve Spring Part

4SHAW/04002TW/NEO -40-4SHAW / 04002TW / NEO -40-

Claims (1)

200532880 十、申請專利範圍： :固墊7=接器’以電連接形成於-半導體裝置上之複數 一基板；以及 複數個‘電材料接觸元件形成 彈簧接二==上， ，體裝置之—個•時，二—有受 ::於該複數個接觸元件係以 ί - 之：器用= 複數個接觸元件之- 作’其所產生之一擦•離達欲===動 4·如請求項1所述之連接哭， 之 每—個係紅鮮辭導體中該魏倾觸元件t 直立外部偏力接合該塾。 目別墊，且藉應用- 5·如請求項丨所述之連接哭，甘士― 和該彈簧部咖_ 該基部 4SHAW/04002TW/NEO -41- 200532880 6. 装加:1!求項1所述之連接器，其中該複數個接觸元件之兮 該彈箬部係使用’而该_個接觸元件之 ，、1尔优用弟—導電材料形成。 7如請求項5所述之連接器’其中該複 第-個的該彈簧部倾有—導電材料。調讀之— 8. 如請求項5輯之雜$，其巾該概 選自銅、銅合金、小粒•鈹_合金、由 鎳/金多層所組成之群組的—材料製造。 …、5 9. 如請求項1所述之連接器，其中每一接觸元件之該 =具有㊣性工作範圍在該接觸元件之一電路徑長度的等 10·如請求項1所it之連接器，其中該接觸平面包含被接觸 的該勢之差而。 11.如請求項1所述之連接器，其中該連接器係設置以連接 至形成於一半導體晶圓上之複數個墊，此等墊間以小於或 約5 0微米之一節距。 12.如請求項1所述之連接器，其中該連接器係供連接至一 基板柵格陣列裝置之複數個塾。 4SHAW/04002TW/NEO -42- 200532880 13. 如請求項1所述之連接器，其中該連接器係供連接至形 成於該半導體裝置上之複數個焊料球，焊料球係形成為具 有小於或約250微米之一節距。 14. 如請求項13所述之連接器，其中該接觸平面包含一平 面相切於欲接觸的該等焊料球之侧表面。 15. 如請求項1所述之連接器，其中每一接觸元件之該曲彈 簧部包含一第一曲彈簧部，且每一接觸元件更包含一第二 曲彈簧部係與該第一曲彈簧部位置相對，該第二曲彈簧部 從該基部延伸，並具有一末端突出於該基板之上，該第二 曲彈簧部形成為從該接觸平面彎開，並具有一曲率，當接 合該半導體裝置之一個別墊時，用以提供一受控制的擦刮 動作。 16.如請求項15所述之連接器，其中每一接觸元件包含兩 個或更多曲彈簧部從該基部延伸，每一該曲彈簧部具有一 末端突出於該基板之上，形成為從該接觸平面彎開，並具 有一曲率，當接合該半導體裝置之一個別墊時，用以提供 一受控制的擦刮動作。 17β如請求項15所述之連接器，其中該連接器供連接至形 成於該半導體裝置上的複數個焊料球，每一接觸元件之該 第一曲彈簧部和該第二曲彈簧部接合一個別焊料球於該焊 料球之該側表面上。 4SHAW/04002TW/NEO -43 - 200532880 • 0㉔本項15所述之連接器，爱 第二曲彈簧部以—螺旋配置突出於該基板:上轉部和索 部之末端。 午之接觸元件之第二曲彈f -第—Γί 連接器，其中該複數個接觸元件之 ^接觸讀之該第-曲彈簧部與該第二I 成為讀背，且該個_末端從該基部面向外t摘形 LI求項1所述之連接器，其巾該複數個接觸树包含 ?一第二接觸元件，該第-接觸元件具- 機械丨生貝異於該第二接觸元件之機械性質。 22·如^求項21所述之連接器，其中該第一接觸元件包含 一曲彈簧部具H彈性工作範圍，_第二接觸元件 包含一曲彈簧部具有一第二彈性工作範圍，該第二彈性工 作範圍大於該第一彈性工作範圍。 23·如請求項21所述之連接器，其中該第一接觸元件包含 一曲彈簧部以一第一距離突出於該基板之該頂表面上，而 邊第二接觸元件包含一曲彈簧部以一第二距離突出於該基 板之該頂表面上，該第二距離大於該第一距離。 4SHAW/04002TW/N ΕΟ -44- 200532880 -曲彈連接器’其+該第—接觸元件包含 二2=需要::第—接觸力，而該第二接觸元件包含-觸力^而要—第二接觸力，該第二接觸力大於該第一接 -式Γ:求H4所述之連接器，其中該第—接觸元件包含 複in® 延伸自該基部，而該第二接觸元件包含 ί觸Z黃部延伸自該基部，該第二鋪元件比該第一 接觸7〇件具有更多曲彈簧部。 Ϊ-^求項Μ所述之連接器，其中該第—接觸元件由一 _ϊ =屬成成由異於該第-金屬 項21所述之連接器，其中該第—接觸元件係由 ΐ认厚度的—金屬層組成，而該第二接觸元件係由具 ，、〜弟一厚度之一第二厚度的〆金屬層組成。 =二如明求項1所述之連接器，其巾該複數個接觸元件包含 弟-群組之接觸元件和組之 ^且，觸元件相離—第—節距，而該第二群組之‘ 件相離大於該第—節距之-第二節距。 觸 29.如清求項1所述之連接器’其中該複數個接觸元件包含 4SHAW/04002TW/NEO -45- 200532880 一第—接觸元件和—笛_ -電性質異於該第t接觸元件，該第一接觸元件具有 接觸元件之電性質。 30·如請求項29所沭 口 一曲彈簧部具有—# ^接器，其中該第一接觸元件包含 元件包含-曲彈^^電阻〃（resistanee)，而該第二接觸 一電阻。 s邛具—弟二電阻，該第二電阻大於該第 -曲彈’其巾該第-接觸元件包含 元件包含-_#C^mpedance)’而該第二接觸 第一阻抗。 ” °卩，、有—苐二阻抗，該第二阻抗大於該 32.如^求項29所述之連接器，其中該第一接觸元件包含 了曲彈簧部具有—第—電感（inducrtance)，而該第二接觸 =件包含-曲彈簧部具有—第二電感，該第二電感大於該 第一電感。 33·如凊求項29所述之連接器，其中該第一接觸元件包含 一曲彈貫口P具有一弟一載流（current carrying)能力， 而該第二接觸元件包含一曲彈簧部具有一第二載流能力， 丘亥弟-一載〉爪此力大於該第一載流能力。 34·如請求項1所述之連接器，更包含一或更多導電接地平 面形成於該基板上或嵌入於該基板中，該複數個導電接地 4SHAW/04002TW/NEO -46- 200532880 觸元件中之一經選擇接觸元 平面鄰近但電隔離該複數個接 件0 ，該-或更多導電接地 離，係變化以建立該接觸元件之^戶^^以牛間的一距 36.如請求項34所述之連接器， 平面電連接蝴咖_元叙十接觸元件嘯 含-第接=，其中該複數個接觸元件包 對差動信號之各塾:連接至形成- -所欲阻抗。第—距離，係變化以建立該接觸元件之 =上接11 ’更包含—電路形成於該基板 -接觸元件。，電連接⑽複數個接觸元件中之至少 其中該電路由嵌入於該基 其中该複數個接觸元件之 39·如請求項38所述之連接器 板中之一或更多金屬層形成。 40.如凊求項39所述之連接器 4SHAW/04002TW/NEO -47- 200532880 一第一接觸元件電連接至該電路，該第一接觸元件和該電 路係使用相同類型之一金屬層形成。 41. 如請求項1所述之連接器，更包含一熱導平面形成於該 基板中，並與該複數個接觸元件中之每一接觸元件電隔離。 42. 如請求項41所述之連接器，其中該熱導平面包含一銅 平面，且為電隔離而形成為與該複數個接觸元件中之每一 接觸元件間隔開。 43. 如請求項41所述之連接器，其中該熱導平面包含一填 充的環氧樹脂，且形成為與該複數個接觸元件之一第一個 緊密接觸。 44. 如請求項1所述之連接器，其中該複數個接觸元件包含 至少一同轴接觸元件，該同轴接觸元件包含： 一第一接觸構件，包含一第一基部和一第一曲彈簧部 自其延伸，該第一基部定義一開口；以及 一第二接觸構件，包含一第二基部和一第二曲彈簧部 自其延伸，該第二基部形成於該第一基部定義之該開口中， 其中該第一接觸構件與該第二接觸構件電隔離。 45. 如請求項1所述之連接器，其中每一接觸元件更包含一 導電黏著部，該基部依附於其上，該導電黏著部依附於該 基板之該頂表面，且具一面積大於該基部之該面積。 4SHAW/04002TW/NEO -48 - 200532880 電— 一基板；以及 龥- 個導電材料的接觸元件形成於該基板上，每-姑 曲彈簧部從該基部延伸，每複數個 該基板上方， 崎以财—末端突出於 其中每一接觸元件之該複數個曲彈筈 該球栅格陣列裝置之一個別 表面士以接合 形成為從該接觸平面弯開，並具有一:面去=彈簧部 格陣列褒置之該個別焊料球時 田妾口遠球栅 動作。 用乂h供一受控制的擦刮 觸平面包含一平 47·如請求項46所述之連接器，其中該 面相切於欲接觸該焊料球之該侧表面/ 觸元件之該基 連續 如請求項46所述之連接器， =該複數㈣科物_目叫 49.如請求項46所述之連接器 該基部係使用—第一導電 T知數個接觸元件之 之該彈簧部係使H導電金屬形2讀數個接觸元件 4SHAW/040Q2TW/NEO -49- 200532880 50 士。月求貝48所述之連接器，其中該 一第一個的解簧部趣有-導電材料。接觸70件之 51·如請求項48所述之連接哭，盆 ^ ^ (CuBe； /銅/鎳/金多層所組成之群組的一材料製造，及不銹鋼 裔的方法，該方 52· —種形成包含複數個接觸元件之一連接 法包含： 提供一基板； 形成一支撐層於該基板上； ，案化該支撐層，叹義複數個支撐元件； 形成職复數個支撐元件，以在每一支標元件頂上 於該基板上與該複數個支撐元件上； 接觸包丄Γ義複數個接觸元件，其中每- :延伸自该第一金屬部並部分橫過一個別支撐元件之： 牙夕除该複數個支撐元件， 部依成之Γ數個接觸元件之每—個包含—基 -太曲彈簧部從該基部延伸、並具有 部形成蝴_之絲面，該曲彈簧 4SHAW/04002TW/NEO -50. 200532880 53. 上包含 沉積一介電材料層。 求貞52所4之方法，其中形成—切層於該基板 5塗4佈貞53㈣嫩，其嫩娜包含一旋轉 二玻离層、—四乙基正矽酸鹽（TE0S)層、或一電漿化 子氣相沉積（PCVD)氧化層。 7 55·如請求項52所述之方法，其中圖案化該 義 複數個支撐树包含： ^ 形成一遮罩層於該支撐層上方； 圖案化該遮罩層，以定義該複數個支撐元件的位置; 利用該圖案化遮罩層，等向蝕刻該支撐層；以及 移除該圖案化遮罩層。 56·如請求項53所述之方法，其中等向蝕刻該複數個支撐 元件包含： 使用可蝕刻該介電材料之一蝕刻化學物，電漿蝕刻該 複數個支撐元件。 57·如請求項53所述之方法，其中等向蝕刻該複數個支樓 元件包含： 使用可蝕刻該介電材料之一蝕刻劑，濕蝕刻該複數個 支樓元件。 4SHAW/04002TW/NEO -51- 200532880 58·如請求項52所述之方法， 上包含： 其中形成一金屬層於該基板 沉積一金屬層於該基板上。 6〇·如請求項52所述之方法，其 複數個接觸元件包含： 、τ圖魏祕屬層以定義 形成一遮罩層於該金屬層上方； tt::定義該複數個接觸元件的位置; 以及 移除該圖案化遮罩層。 包含：月求貝52所述之方法，其中移除該複數個支撐 濕_以移_魏個切元件。 62.如請求項52所述之方法， 簧部形成為從—接觸 :中母—接觸元件之該 半導體裝置之—個 弓開’亚具有一曲率，當接 可’用以提供一受控制的擦刮象 阢如請求項52所述 複數個接觸元件之動作勺二，、中圖案化該金屬層以J 4SHAW/04002TW/NEO -52- 200532880 螺旋配置延 定義一第-接觸元件，包含—第—金屬 上，以及-第二金屬部自該第—金屬部以丨於雜板 伸，並部分橫過一個別支撐元件之頂部。 64.如請求項52所述之方法，其中誃 義複數個接觸元件包含： w^” 屬層以定 定義-第-接觸元件，包含 並鄰近一第-支撐元件之—第—端弟‘屬第 板^ 及 以 該第一金屬部延伸並部分横第-支撐元叙自 定: 苐一接觸元件，包合_笙一人M A 並鄰近-第二支撐元件之 弟—i屬指該基板上 端，以及-第二金屬部自該第對該第一 第二支撐元件之頂部， 金屬邛延伸亚部分橫過該 元件和該第二接觸元件具 其中如此形成之該第一接觸 有面對彼此的個別末端。 65.如請求項52所述之方法，其中安 義複數個接觸元件包含·· ^圖木化该金屬層以定 定義一第一接觸元件 並鄰近一第一支撐元件之—二俨弟了金屬部於該基板上 該第-金屬部延伸並部分横過該；金屬部自 及 支掠凡件之頂部；以 定義一第二接觸元件，包含 並鄰近一第二支撐元件之—弟孟屬部於該基板上 弟二端，該第二端鄰近該第一 4SHAW/04002TW/NEO ^53- 200532880 支f元件之該第—端，以及—第二金屬部自該第-八 延伸亚部分橫過該第二支撐元件之頂部，人 至屬部 其中如此形成之該第—接觸元件 有連接部，並具有背㈣ ^接觸轉具 別末端 該 6方6法=供形成包含複數個接航件之-連接器的方法， 提供一基板； 提供一導電黏著層於該基板上； 形成一支撐層於該導電黏著層上· =化該支撐層，以絲複數個支擇元件； 專向侧該複數個支撐元件， 形成圓角； W文保几件頂上 上；形成-金屬層於該導電黏著層上與該複數個支撐元件 元件圖和該導電黏著層’以定義複數個接觸 黏著部上，以及-第二全細鶴ώ if挪成於一導電 橫過-個別支榜元件之二自轉-金屬部並部分 移除該複數個支擇元件， 其中如^彡成之該複數個接觸元件之每—個包含一基 二著部’該導電黏著依附於該基板，以及 相對该基板之该表面，該曲彈簧部形成為具有一凹曲 4SHAW/04002TW/NEO -54- 200532880 案化該支撐層以定義 67·如請求項ββ所述之方法，其中圖 複數個支撐元件包含： 形成一遮罩層於該支撐層上方； 圖案化該遮罩層，以定義該複數個支撐元件的位置； 利用。玄圖案化遮罩層，非專向飿刻該支樓層，該非 向蝕刻停止於該導電黏著層之上或之中；以及 w 、 移除該圖案化遮罩層。 68. 電黏 所狀方法，其巾_化屬層和該導 者層以疋義複數個接觸元件包含： 形成一遮罩層於該金屬層上方； 罩層，以定義該複數個接觸元件的位置； 利用该圖案化遮罩層，蝕刻該金屬層； 電黏ί:該：匕遮罩層和該複數個支“件，侧該導 移除該圖案化遮罩層。 電 ，66所述之^法’其中該支撐層包含-介 層，且荨向飿刻該複數個支撐元件包含： 複數個·支撐元件 該介電材料之—蝕刻化學物，電漿蝕刻該 電 包含-介 4SHAW/04002TW/NEO -55- 200532880 使用可蝕刻該介電材料之一蝕刻劑，濕蝕刻該複數個 支撐元件。 71.如請求項66所述之方法，其中形成一金屬層於該基板 上包含： 沉積一金屬層於該基板上，係使用一製程選自一化學 氣相沉積製程、一物理氣相沉積製程、一電鍍製程、或一 濺鍍製程。 4SHAW/04002TW/NEO -56200532880 10. Scope of patent application: Fixed pads 7 = connectors 'are formed on a semiconductor device by electrical connection to a plurality of substrates; and a plurality of' electrical material contact elements form spring contacts == on, —A • h, two—have received :: For the plurality of contact elements, use ί-:: 器用 = of the plurality of contact elements-do 'its one of the wiping • Lida desire === move 4 · such The connection described in claim 1 cries, and the Wei tilting element t in the red fresh conductor is upright externally biased to join the coil. Item pads, and by application-5 · Connect as described in the request item, cry, Ganshi-and the spring mini coffee _ The base 4SHAW / 04002TW / NEO -41- 200532880 6. Add: 1! Find item 1 In the connector, wherein the plurality of contact elements and the spring portion are formed by using the contact element, the contact element is preferably formed of a conductive material. 7 The connector according to claim 5, wherein the spring portion of the second one has a conductive material. Read it-8. If the miscellaneous $ of the 5th item of the request is made, it should be made of materials selected from the group consisting of copper, copper alloys, small grains, beryllium alloys, and nickel / gold multilayers. …, 5 9. The connector as described in claim 1, wherein each of the contact elements == having an electrical working range that is within the length of an electrical path of the contact element, etc. 10. The connector as described in claim 1 Where the contact plane contains the difference of the potentials being contacted. 11. The connector according to claim 1, wherein the connector is provided to be connected to a plurality of pads formed on a semiconductor wafer, and the pads have a pitch of less than or about 50 microns. 12. The connector according to claim 1, wherein the connector is a plurality of cells for connection to a substrate grid array device. 4SHAW / 04002TW / NEO -42- 200532880 13. The connector according to claim 1, wherein the connector is for connecting to a plurality of solder balls formed on the semiconductor device, and the solder balls are formed to have a size of less than or about One pitch of 250 microns. 14. The connector of claim 13, wherein the contact plane includes a side surface tangent to the solder balls to be contacted. 15. The connector according to claim 1, wherein the curved spring portion of each contact element includes a first curved spring portion, and each contact element further includes a second curved spring portion and the first curved spring. The second curved spring portion extends from the base portion and has an end protruding above the substrate. The second curved spring portion is formed to bend away from the contact plane and has a curvature. When the semiconductor is joined, One of the pads is used to provide a controlled wiping action. 16. The connector according to claim 15, wherein each contact element includes two or more curved spring portions extending from the base portion, and each of the curved spring portions has an end protruding from the substrate and is formed from The contact plane is bent away and has a curvature to provide a controlled wiping action when engaged with an individual pad of the semiconductor device. 17β The connector according to claim 15, wherein the connector is for connection to a plurality of solder balls formed on the semiconductor device, and the first curved spring portion and the second curved spring portion of each contact element are joined to one another Individual solder balls are on the side surface of the solder balls. 4SHAW / 04002TW / NEO -43-200532880 • 0㉔The connector described in item 15 above, the second curved spring part protrudes from the base plate in a spiral configuration: the end of the turning part and the cable part. The second flex-f-th-Γί connector of the contact element at noon, wherein the ^ -contact spring portion of the plurality of contact elements and the second I read back, and the _ end is from the The base is facing outwards. The connector described in Item 1 of the extractor LI, wherein the plurality of contact trees includes a second contact element, the first contact element with a mechanism, and the mechanism of the second contact element is different from that of the second contact element. nature. 22. The connector according to claim 21, wherein the first contact element includes a curved spring portion having a H elastic working range, and the second contact element includes a curved spring portion having a second elastic working range. The second elastic working range is larger than the first elastic working range. 23. The connector according to claim 21, wherein the first contact element includes a curved spring portion protruding at a first distance from the top surface of the substrate, and the second contact element includes a curved spring portion to A second distance protrudes from the top surface of the substrate, and the second distance is greater than the first distance. 4SHAW / 04002TW / N ΕΟ -44- 200532880-Kinematic connector 'its + the first contact element contains two 2 = required :: contact force, and the second contact element contains-contact force ^ required- Two contact forces, the second contact force is greater than the first contact-type Γ: Find the connector described in H4, wherein the first contact element includes a complex in® extending from the base, and the second contact element includes a contact The Z yellow portion extends from the base portion, and the second paving element has more curved spring portions than the first contact 70 piece. Ϊ- ^ The connector according to item M, wherein the first contact element is made of a _ϊ = is made of a connector different from the -metal item 21, wherein the first contact element is made of ΐ -Thick metal layer, and the second contact element is made of ytterbium metal layer with a second thickness which is one of the first thickness. = The connector according to item 1 of the Ming, wherein the plurality of contact elements include the contact element of the brother-group and the contact element of the group ^, and the contact elements are separated from each other by the first pitch, and the second group The 'pieces are separated by more than the first pitch of the second pitch. 29. The connector according to item 1 of the claim, wherein the plurality of contact elements include 4SHAW / 04002TW / NEO -45- 200532880-the first contact element and the flute _-have electrical properties different from the t contact element, The first contact element has electrical properties of the contact element. 30. As described in claim 29, a curved spring portion has a ## connector, wherein the first contact element includes a component including a -resistee, and the second contact includes a resistor. The second resistance is greater than the second resistance, the first contact element includes the element including -_ # C ^ mpedance), and the second contact has a first impedance. The second impedance is greater than the 32. The connector according to ^ seeking item 29, wherein the first contact element includes a curved spring portion having a first inductance (inducrtance), The second contact includes a curved spring portion having a second inductance that is greater than the first inductance. 33. The connector according to claim 29, wherein the first contact element includes a curved The piercing opening P has a current carrying capacity, and the second contact element includes a curved spring portion having a second current carrying capacity. Qiu Haidi-a load> the force is greater than the first current carrying capacity. 34. The connector according to claim 1, further comprising one or more conductive ground planes formed on the substrate or embedded in the substrate, the plurality of conductive ground 4SHAW / 04002TW / NEO -46- 200532880 contact elements One of the selected contact element planes is adjacent but electrically isolates the plurality of contacts 0, and the-or more conductive grounds are changed to establish a distance between the contact elements of the contact element 36. If requested, 34 connector, plane electrical connection butterfly _Yuan Xu ten contact elements include-first connection =, where the plurality of contact elements include each of the differential signals: connect to--to form the desired impedance. The first-distance is changed to establish the contact element = Continued from 11 'further includes-the circuit is formed on the substrate-the contact element. The electrical connection is at least one of the plurality of contact elements. The circuit is embedded in the base and the plurality of contact elements is 39. As described in claim 38. One or more metal layers in the connector board are formed. 40. The connector 4SHAW / 04002TW / NEO -47- 200532880 as described in claim 39, a first contact element is electrically connected to the circuit, the first contact The element and the circuit are formed using a metal layer of the same type. 41. The connector according to claim 1, further comprising a thermally conductive plane formed in the substrate and in contact with each of the plurality of contact elements. The component is electrically isolated. 42. The connector according to claim 41, wherein the thermally conductive plane includes a copper plane and is formed to be electrically isolated from each of the plurality of contact elements. 43. As requested 41 The connector described above, wherein the thermally conductive plane comprises a filled epoxy resin and is formed in intimate contact with one of the plurality of contact elements. 44. The connector according to claim 1, wherein the plurality of The contact elements include at least one coaxial contact element. The coaxial contact element includes: a first contact member including a first base portion and a first curved spring portion extending therefrom, the first base portion defining an opening; and A second contact member includes a second base portion and a second curved spring portion extending therefrom, the second base portion is formed in the opening defined by the first base portion, wherein the first contact member is electrically connected to the second contact member. isolation. 45. The connector according to claim 1, wherein each contact element further comprises a conductive adhesive portion, the base portion is attached thereto, the conductive adhesive portion is attached to the top surface of the substrate, and has an area larger than that That area of the base. 4SHAW / 04002TW / NEO -48-200532880 Electrical — a substrate; and a contact element of 龥-conductive material is formed on the substrate, each spring spring portion extends from the base, above each of the substrate, Qi Yicai —The plurality of curved projectiles whose ends protrude from each of the contact elements. An individual surface of the ball grid array device is formed by joining to bend away from the contact plane, and has a: surface = spring cell array. When the individual solder ball is placed, the Tadoriguchi far ball grid moves. Use 乂 h for a controlled scrubbing contact plane including a flat 47. The connector as described in claim 46, wherein the face is tangent to the side surface / contact element that is to contact the solder ball and the base is continuous as requested The connector described in 46, = the plurality of pupae_heading 49. The connector described in claim 46, the base is used-the first conductive T knows that the spring part of several contact elements makes H conductive Metal-shaped 2 reading contact elements 4SHAW / 040Q2TW / NEO -49- 200532880 50 ± 50. The connector described in Yueqiu 48, wherein the first spring release part has a conductive material. Contacting 51 of the 51 pieces, as described in claim 48, the connection cries, pots ^ ^ (CuBe; a copper / nickel / gold multilayer group consisting of a material, and a method of stainless steel, the party 52 · — A method for forming a connection including a plurality of contact elements includes: providing a substrate; forming a support layer on the substrate; forming the support layer to express a plurality of support elements; forming a plurality of support elements to A standard element is mounted on the substrate and the plurality of support elements; the contact package includes a plurality of contact elements, each of which extends from the first metal portion and partially traverses another support element: In addition to the plurality of supporting elements, each of the plurality of contact elements including a base-to-curly spring portion extends from the base portion and has a silk surface forming a butterfly, the curved spring 4SHAW / 04002TW / NEO -50. 200532880 53. The method includes depositing a layer of dielectric material. The method for seeking 4 of Zhen 52, wherein the formation-cutting layer is coated on the substrate 5 and cloth 53 is soft, and its tender includes a rotating two-glass delamination layer. ——— tetraethyl orthosilicate TEOS) layer, or a plasma plasma deposition (PCVD) oxide layer. 7 55. The method of claim 52, wherein patterning the plurality of support trees includes: ^ forming a mask layer on the Above the support layer; pattern the mask layer to define the positions of the plurality of support elements; use the patterned mask layer to etch the support layer isotropically; and remove the patterned mask layer. 56 · on request The method according to item 53, wherein isotropically etching the plurality of support elements comprises: using an etching chemical that etches one of the dielectric materials, and plasma etching the plurality of support elements. 57. The method according to claim 53 The isotropic etching of the plurality of branch elements includes: wet etching the plurality of branch elements using an etchant that can etch the dielectric material. 4SHAW / 04002TW / NEO -51- 200532880 58 · As requested in Item 52 The method described above includes: forming a metal layer on the substrate and depositing a metal layer on the substrate. 60. The method according to claim 52, wherein the plurality of contact elements include: By definition Forming a mask layer above the metal layer; tt :: defining the positions of the plurality of contact elements; and removing the patterned mask layer. Including: the method described in Yueqiu 52, wherein the plurality of supports are removed Wet_moving_cutting element. 62. The method as described in claim 52, wherein the spring portion is formed from a contact-to-middle-contact element of the semiconductor device, a bow-opener having a curvature, when It can be used to provide a controlled scratching action, such as the action of a plurality of contact elements as described in claim 52. The metal layer is patterned with a J 4SHAW / 04002TW / NEO -52- 200532880 spiral configuration extension. A first-contact element is defined, including a first-metal, and a second metal portion extending from the first-metal portion to a miscellaneous plate, and partially crossing the top of another supporting element. 64. The method according to claim 52, wherein the plurality of contact elements include: w ^ ”The attribute layer is defined by the -th-contact element, which includes and is adjacent to the first-support element of the first-end brother The first plate ^ and the first metal part extending and partially transverse the first-support element are self-defining: (1) a contact element, which encloses _ Shengyiren MA and is adjacent to-the second support element's brother—i refers to the upper end of the substrate, And-the second metal portion extends from the top of the first pair of the first and second supporting elements, and the metal cymbal extension sub-section crosses the element and the second contact element with the first contact thus formed having individual faces facing each other 65. The method as recited in claim 52, wherein the plurality of contact elements comprise a metallized layer to define a first contact element adjacent to a first support element—a second brother. The metal portion extends on the substrate and partially crosses the first metal portion; the metal portion extends from the top of the support; to define a second contact element, which includes and is adjacent to a second support element-Dimon On the substrate Two ends, the second end is adjacent to the first end of the first 4SHAW / 04002TW / NEO ^ 53- 200532880 branch f element, and the second metal portion traverses the second support element from the eighth extension subsection At the top, the first contact element formed in the human-to-member unit has a connection portion and has a backing. ^ Contact turn the other end of the 6-way 6 method = method for forming a-connector containing a plurality of terminal parts. A substrate is provided; a conductive adhesive layer is provided on the substrate; a support layer is formed on the conductive adhesive layer; the support layer is formed by a plurality of supporting elements; a plurality of supporting elements are formed on a specific side to form Rounded corners; on top of several pieces of W Wenbao; forming-a metal layer on the conductive adhesive layer with the plurality of supporting element elements and the conductive adhesive layer 'to define a plurality of contact adhesive portions, and-a second fully thin crane ώ if moved into a conductive cross-rotation of the individual supporting element two-metal part and partially remove the plurality of optional elements, where, for example, each of the plurality of contact elements includes a base two The landing part of the conductive adhesion Attached to the substrate, and opposite to the surface of the substrate, the curved spring portion is formed to have a concave curve 4SHAW / 04002TW / NEO -54- 200532880 The supporting layer is defined to define 67. The method as described in the request ββ, The plurality of supporting elements in the figure include: forming a masking layer on the supporting layer; patterning the masking layer to define the positions of the plurality of supporting elements; using. Mysterious patterned masking layer, non-specific engraving The branch floor, the non-directional etching stops on or in the conductive adhesive layer; and w, remove the patterned masking layer. 68. Electro-adhesive method, its towel layer and the conductor layer The meaning of the plurality of contact elements includes: forming a mask layer above the metal layer; a mask layer to define the positions of the plurality of contact elements; using the patterned mask layer to etch the metal layer; electrical adhesion: The: dagger mask layer and the plurality of pieces, the guide removes the patterned mask layer. The method described in 66, wherein the support layer includes a dielectric layer, and the plurality of support elements are engraved to include: a plurality of support elements of the dielectric material-an etching chemical, and the plasma etches the electrical Contains-4SHAW / 04002TW / NEO -55- 200532880 Wet etch the support elements using an etchant that can etch the dielectric material. 71. The method of claim 66, wherein forming a metal layer on the substrate comprises: depositing a metal layer on the substrate using a process selected from a chemical vapor deposition process and a physical vapor deposition process , A plating process, or a sputtering process. 4SHAW / 04002TW / NEO -56
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9111821B2 (en) 2013-01-29 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Packaged semiconductor devices and packaging devices and methods
US9953907B2 (en) 2013-01-29 2018-04-24 Taiwan Semiconductor Manufacturing Company, Ltd. PoP device
TWI776216B (en) * 2019-08-28 2022-09-01 荷蘭商Ａｓｍｌ荷蘭公司 Wafer grounding system and non-transitory computer-readablbe medium

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7924035B2 (en) * 2008-07-15 2011-04-12 Formfactor, Inc. Probe card assembly for electronic device testing with DC test resource sharing
JP4941853B2 (en) * 2010-06-23 2012-05-30 山一電機株式会社 Contact head, probe pin provided with the same, and electrical connection device using the probe pin
CN113130432B (en) * 2019-12-30 2022-12-27 华为机器有限公司 Electronic module and electronic equipment

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5152695A (en) * 1991-10-10 1992-10-06 Amp Incorporated Surface mount electrical connector
US5802699A (en) * 1994-06-07 1998-09-08 Tessera, Inc. Methods of assembling microelectronic assembly with socket for engaging bump leads
US6807734B2 (en) * 1998-02-13 2004-10-26 Formfactor, Inc. Microelectronic contact structures, and methods of making same
US6713374B2 (en) * 1999-07-30 2004-03-30 Formfactor, Inc. Interconnect assemblies and methods
US20030022532A1 (en) * 2001-07-27 2003-01-30 Clements Bradley E. Electrical contact
US6684499B2 (en) * 2002-01-07 2004-02-03 Xerox Corporation Method for fabricating a spring structure

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9111821B2 (en) 2013-01-29 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Packaged semiconductor devices and packaging devices and methods
US9728496B2 (en) 2013-01-29 2017-08-08 Taiwan Semiconductor Manufacturing Company, Ltd. Packaged semiconductor devices and packaging devices and methods
US9953907B2 (en) 2013-01-29 2018-04-24 Taiwan Semiconductor Manufacturing Company, Ltd. PoP device
US10867897B2 (en) 2013-01-29 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. PoP device
TWI500091B (en) * 2013-02-19 2015-09-11 Taiwan Semiconductor Mfg Co Ltd Method of packaging a semiconductor device and packaging device
US10109573B2 (en) 2013-02-19 2018-10-23 Taiwan Semiconductor Manufacturing Company Packaged semiconductor devices and packaging devices and methods
TWI776216B (en) * 2019-08-28 2022-09-01 荷蘭商Ａｓｍｌ荷蘭公司 Wafer grounding system and non-transitory computer-readablbe medium

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