特別是指 義電阻膜 5 10 15 20Especially the meaning of resistance film 5 10 15 20
1237898 狄、發明說明： 【發明所屬之技術領域】 本發明是有關於一種薄膜電阻的製造方法， 一種利用+需移除的保護層來作為罩幕(Mask)以定 圖案之薄膜電阻的製造方法。 【先前技術】 電阻可分為線圈電阻、金屬膜電阻、非線圈電阻等: 大類，而非線圈電阻（晶片電阻）因其尺寸小、重量輕、成^ 低、參數範圍大，且適用性廣，因此目前為業界：產量孝 使用量最多的-種電阻元件。晶片電阻依製造方法可分^ 薄膜電阻與厚膜電阻兩種。 如中華民國第86113丨62號專利案所揭露，厚膜電阻之^ 電阻膜是利用網框印刷在陶£基板上，再經由乾燥、高溫（、 如900。〇燒結等製程而成。電阻膜厚約5到1〇 以上且 其材質為由玻璃和導電粒子混合而成之電阻膠。 然而，由於厚膜電阻之電阻膜以印刷方式形成，電阻— 膜之厚度容易不均，且因電阻膠擴散與燒結溫度的變異影參_ 響，致使厚膜電阻之電阻值變化較大。尤其在一旦應用於 高頻環境時，因厚膜電阻之電阻膜孔隙率高、結構鬆散， 導致高頻訊號損耗（lost)較大，所以並不適用於高頻範圍。 薄膜電阻之電阻膜係採用的諸如濺鍍（SpuUer Deposition)或蒸鍍（Evaporation)之類的物理氣相沉積技術 (Physical Vapor Deposition’ PVD)、或者化學氣相沉積技術 (Chemical Vapor Deposition，CVD)等半導體製程生成。由 4 5 10 15 1237898 於這些半導體製程不像網版印刷具有區域選擇性的鑛膜特 性’所需圖案通常需要經由事後的光微影蝕刻（Ph〇t〇 Lithography)技術來形成。詳言之，係於薄膜電阻之電阻膜 上覆蓋光阻，並搭配光罩曝光、顯影，以定義電阻膜之圖 案、並以顯影之光阻作為遮罩，以便對光阻底下之電阻膜 進行選擇性蝕刻，將未被光阻覆蓋及保護的部分以化學反 應或物理作用去除，以轉移光罩圖案於電阻膜上。最後， 將光阻由電阻膜上剝除（Strip)，再依序形成保護層、端面電 極來構成薄膜電阻。 相較於需要高溫燒結的厚膜電阻製程，薄膜電阻製程 多可控制⑥400°C的溫度以下’其薄膜成份易於控制、電阻 溫度係數（TCR)穩定與厚度的均勻性可控制在 5%以下。此~ 外，在问頻應用方面，薄膜電阻之電阻膜可依靶材的選擇 而鍍出高純度且緻密之電阻膜，致使高頻損耗甚低於厚膜 電阻，而適合應用於高頻範圍。 由於薄膜電阻之圖案係利用微影形成，且需剝離光阻 膜才％進4亍後續處理。然而去除光阻時，可能發生去除不 凡王去除過田而不慎除去部分電阻膜，以及去除光阻膜 後’電阻膜暴露於當、、西含 $ μ至内裱境而遭微塵污染或部分被氧 化的情況發生’薄膜雷阳 、 朕冤阻之電氣特性可能因此發生變化， 甚而導致不良品的產生。 【發明内容】 因此，若能利用其他方 之圖案，當可省除剝離光阻 式取代光阻來界定出薄膜電阻 時可能帶來的缺憾，進而可達 20 1237898 到提高薄膜電阻良率之功效。 、^ 本么明之目的是在提供一種薄膜電阻的製造方 法’係利用不需移除的第一保護層來作為罩幕以定義電阻 膜圖案’以達到提高良率與簡化製造流程之功效。 本發明的薄臈電阻的製造方法，係包含以下步驟·· V驟A)在-絕緣基板之上表面形成兩分別位於該絕緣 基板兩端之主電極；1237898 D. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a method for manufacturing a thin film resistor, a method for manufacturing a thin film resistor with a fixed pattern by using + a protective layer to be removed as a mask. . [Previous technology] Resistance can be divided into coil resistance, metal film resistance, non-coil resistance, etc .: Large category, but not coil resistance (chip resistance) because of its small size, light weight, low cost, large parameter range, and wide applicability Therefore, it is currently in the industry: the most widely used type of resistive element in production. Chip resistance can be divided into two types according to the manufacturing method: thin film resistance and thick film resistance. As disclosed in the patent case No. 86113 丨 62 of the Republic of China, the resistive film of thick film resistors is printed on a ceramic substrate using a screen frame, and then dried, high temperature (such as 900. Sintering). Resistive film Thickness of about 5 to 10 or more and its material is a resistive glue made of glass and conductive particles. However, because the resistive film of thick film resistor is formed by printing, the thickness of the resistive film is easy to be uneven, and due to the resistive glue The variation of the diffusion and sintering temperature affects the resistance value of the thick film resistor. Especially when it is used in a high frequency environment, the thick film resistor has a high porosity and a loose structure, which results in high frequency signals. The loss is large, so it is not suitable for the high frequency range. The resistive film of the thin film resistor is a physical vapor deposition technique such as SpuUer Deposition or Evaporation (Physical Vapor Deposition ' PVD) or Chemical Vapor Deposition (CVD) and other semiconductor processes. 4 5 10 15 1237898 These semiconductor processes do not have areas like screen printing Optional mineral film characteristics' The required pattern usually needs to be formed by a post-photolithography technique. In detail, the resistive film of the thin-film resistor is covered with a photoresist and matched with a photomask. Exposure and development to define the pattern of the resistive film and use the developed photoresist as a mask to selectively etch the resistive film under the photoresist, and chemically or physically act on the parts not covered and protected by the photoresist It is removed to transfer the photomask pattern on the resistive film. Finally, the photoresist is stripped from the resistive film, and then a protective layer and an end electrode are sequentially formed to form a thin film resistor. Compared to a thick film that requires high temperature sintering Resistive process, thin film resistor process can be controlled below ⑥400 ° C. Its film composition is easy to control, the temperature coefficient of resistance (TCR) stability and thickness uniformity can be controlled below 5%. In addition, in the application of frequency The resistance film of thin film resistor can be plated with high purity and dense resistance film according to the choice of target material, resulting in high frequency loss that is much lower than that of thick film resistor, which is suitable for high frequency range. The pattern of the film resistor is formed by lithography, and the photoresist film needs to be peeled off for further processing. However, when the photoresist is removed, it may happen that the extraordinary king removes Kota and accidentally removes some of the resistive film and removes the photoresist Behind the film 'The case where the resistance film is exposed to the dust when it is exposed to the internal mounting surface and is contaminated by dust or is partially oxidized' The electrical characteristics of the thin film Leiyang and 朕 may be changed, and even cause defective products [Abstract] Therefore, if other patterns can be used, stripping photoresist can be eliminated instead of photoresist to define the defects that may be brought about by the thin film resistance, which can reach 20 1237898 to improve the yield of thin film resistance. Effect. The purpose of this Meming is to provide a method for manufacturing thin film resistors ', which uses a first protective layer that does not need to be removed as a mask to define a resistive film pattern' in order to improve the yield and simplify the manufacturing process. The method for manufacturing a thin-film resistor according to the present invention includes the following steps: Step V) A) forming two main electrodes on the upper surface of an insulating substrate respectively at two ends of the insulating substrate;
步驟B)以薄膜沉積方式形成一電阻膜於前述絕緣基板 之上表面； 步驟C)以印刷方式於前述之電阻膜上形成一第一保護 層’該第-保護層係至少遮罩位於該等主電極間的至少一 口P伤電阻膜並使位於該等主電極上的鄰近端側的部分電阻 膜稞露’而位於該等主電極間的該第一保護層部分係不間 斷地延伸； 步驟D)以該第一保護層作為罩幕，移除該裸露部分之 電阻膜；及 步驟E)形成兩端面電極於前述步驟之絕緣基板的兩端 部並分別遮蔽該對應之主電極。 【實施方式】 有關本發明之如述及其他技術内容、特點與功效，在 以下配合參考圖式之一較佳實施例的詳細說明中，將可清， 楚的呈現。在下文的實施例中為方便說明，選擇以單一薄 膜電阻來說明，然而熟習該項技藝者當知，實際製造時可 於大型絕緣基板上形成多數個呈矩陣排列之薄膜電阻。 6 5 10 15 1237898 參閱圖1，本發明薄膜電阻的製造方法較佳實施例之製 造流程。為讓本實施例更易被瞭解，下文令一併配人巴2 圖9來說明本實施例的製造流程。 首先，步驟11係於一絕緣基板2之表面形成電極。如 圖2，分別於絕緣基板2上表面21的兩端形成兩主電極31 。另外，本例更m緣基板2之下表面22兩端形成兩下 面電極32，供使用表面安裝技術（Surface M〇um 灯 ，SMT)接合於印刷電路板（PCB)上。在本實施例中，絕緣基 板2為氧化鋁（A12〇3)陶瓷絕緣基板，主電極3丨與下面電極 32係利用網版印刷方式形成，且為導電糊膠（⑶^此加 paste)燒結而成，例如銀膠。 其次在步驟12，如圖3，利用薄膜沉積於絕緣基板2 之上表面21形成一電阻膜4。由於薄膜沉積無區域選擇之 特’因而電阻膜4將覆蓋於絕緣基板2上表面21的裸露 部分與兩主電極31上。本例之電阻膜4可利用濺鍍（Sputter DeP〇sltlon)來形成且為鈦鎢合金（Tiw)與錳銅合金（Μα”所 形，之多層薄膜 '然而，熟習該項技藝者當知，電阻膜4 /、利用諸如蒸錢（Evap〇rati〇n)之類的其他種物王里氣相沉積 技術(PVD)、或者化學氣相沉積技術(cvd)來形成，而電阻 \ 4的材貝可僅為鈦鎢合金與錳銅合金的一種，或者其他 種類的電阻材料，並不應受限於本實施例的說明。 P边後在步驟 1 ^ , 3 係如圖4，利用網板印刷於欲保留 特疋區域的電卩且胺』 、 上’形成第一保護層51。配合圖5 本例之第一保護展s $ 曰51係一矩形區塊而形成於兩主電極 20 1237898 間和兩主電極31上内側部分（即與位於兩主電極3ι間的電 阻膜4相接之部分）之電阻膜4上’而其材f為非晶質氧化 矽膠（又稱玻璃膠）。相較於習知光阻需經曝光、顯影之繁冗 步驟’始能定義電阻膜之圖案，在本例中，由於網板印刷 5 具有區域選擇性，所以第-保護層51可直接形成於欲保留 之電阻膜4上，並讓欲移除之電阻膜4保持裸露，即可輕 鬆定義電阻膜4之圖案，使本案明確簡化習知技術之繁瑣 流程。另外當欲調整電阻值時，如圖6，第一保護層51，亦 可讓位於兩主電極31上内側部分電阻膜4部分裸露，例如 ίο &-側邊形成一 u型槽511，，使蝕刻後電阻膜4因形狀變 化而改變其電阻值。因而，第一保護層51、51，的形狀可依 設計需求而決定，僅需符合使位於兩電極31間的部分第一 保護層51，需不間斷地延伸（以避免蝕刻後位於兩電極μ 間部分電阻膜4中斷）與使位於主電極31上的鄰近端側的 15 冑分電阻膜4裸露之條件即可，並不受限於本實施例所揭 露。緊接著在步驟14中，如圖7所示，以第_保護層Η 作為罩幕（Mask)，利用敍刻（Etching)移除電阻膜4中裸露部 分（即電阻膜4中位於主電極31上的外側部分），以將第一 保護層51之圖案轉移至電阻膜4’形成電阻膜4之圖案。 2〇 舉例來說，電阻膜4中的鈦鎢合金，可在溫度坑机下 利用h2o2進行㈣，至於電阻膜4中的_合金，可在溫 度23°C±2t;下利用_3+Ηα進行蝕刻。在步驟μ形成電 阻膜4之圖案後’不同於習知薄膜電阻之光阻，第一保護 層51無須移除’進而可防止因去光阻所產生的電阻膜4污 1237898 染或氧化、光阻去除不全、不慎移除電阻膜4等情況發生 至^電^膜4之特性相較於習知薄膜電阻更為穩定，以達 到長:咼良率之功效。 5 10 15 電阻佶$人°圖8與圖9，在步驟15中，為讓電阻膜4的 ^值符&需標準，會執行電阻值修整（Trim丽），即利用 啫如雷射之類的設備來於電 調電阻值為標準電阻值。 形成微調溝41，以微 -佯在:驟16中，如圖1〇,利用網板印刷-包覆第 層51與電阻膜4。第-伴^1’以保;護第一保護 〇 弟一保4層52之材質為環氧樹脂。 敢後，在步驟17中，加m ” ^ 鍍方式於絕緣基板2之兩：兩端=如滾鍍之類的電 例中’在電链上㈣極:=::::26。在本實施 上-層端面導電膜6卜而心 基板2之兩端側鑛 與下面電極32上錢上端面電Ί端面導電膜61 9 電極6，以形成兩夾置於絕緣基 之兩端部的平置U字都雷朽 ,. 序雷妒心、 予1電極°本例之端面電極6係依 序電鑛銅（〇〇、錄(Ni)與錫（Sn)的多層合金。 =前所述，有別習知薄膜電阻利用需移除之光阻來作 ^發明利用具區域選擇性、且無須移除之第一保 驟Μ化Γ罩幕而钱刻電阻膜4。不僅因省略移除光阻步 化製造流程，並且因省略此去光阻步驟；隨之免除 更持續令電_與外界之隔==^=良=發 明之電阻膜特性較為穩定，進而可達到提高良^ 20 1237898 惟以上所述者，僅為本發明之較佳實施例而已，當不 能以此限定本發明實施之範圍，即大凡依本發明申請專利 範圍及發明說明書内容所作之簡單的等效變化與修飾，皆 應仍屬本發明專利涵蓋之範圍内。 5 10 15 20 【圓式簡單說明】 圖1是本發明薄膜電阻的製造方法較佳實施例之流程 圃， 圖2是圖i實施例中形成電極於絕緣基板表面的製程 剖視示意圖； 圖3是圖1實施例中形成電阻膜於絕緣基板上的製程 剖視示意圖； 圖4疋圖1實施例中形成第一保護層於電阻膜上的製-· 程剖視示意圖； 〜圖5疋圖1實轭例中形成第一保護層於電阻膜上的一 範例的俯視圖； ―圖6疋g| 1實施例中形成第一保護層於電阻膜上的另 一範例的俯視圖； 罐 圖7是圖1實施例中蝕刻電阻膜的製程剖視示意圖； 圖8是圖i實施例中電阻值修整的製程剖視示意圖； 圖9是圖8的電阻值修整製程之俯視示意圖； 圖1〇是圖1實施例中形成第二保護層之製程剖視示音 圖；及 〜 圖11是圖1實施例中形成端面電極之製程剖視示意圖 10 25 1237898 【圊式之主要元件代表符號說明】 11〜17步驟 41微調溝 2絕緣基板 5 1、5 Γ第一保護層 21上表面 511’ U型槽 22下表面 52第二保護層 3 1主電極 6端面電極 32下面電極 61端面導電膜 4電阻膜 11Step B) forming a resistive film on the upper surface of the insulating substrate by thin film deposition; step C) forming a first protective layer on the aforementioned resistive film by printing; At least one mouth of the resistive film between the main electrodes exposes a portion of the resistive film located on the adjacent ends of the main electrodes, and the portion of the first protective layer located between the main electrodes extends without interruption; steps D) using the first protective layer as a cover, removing the exposed portion of the resistive film; and step E) forming two end surface electrodes on both ends of the insulating substrate in the foregoing step and shielding the corresponding main electrodes respectively. [Embodiment] As for the other technical contents, features and effects of the present invention, it will be clear and clear in the following detailed description of a preferred embodiment with reference to the accompanying drawings. In the following embodiments, for the convenience of explanation, a single thin film resistor is selected for description. However, those skilled in the art will know that a plurality of thin film resistors arranged in a matrix can be formed on a large insulating substrate during actual manufacturing. 6 5 10 15 1237898 Referring to FIG. 1, a manufacturing process of a preferred embodiment of a method for manufacturing a thin film resistor according to the present invention. In order to make this embodiment easier to understand, the following describes the manufacturing process of this embodiment with a combination of FIG. 2 and FIG. 9. First, step 11 is to form an electrode on the surface of an insulating substrate 2. As shown in FIG. 2, two main electrodes 31 are formed at both ends of the upper surface 21 of the insulating substrate 2. In addition, in this example, two lower electrodes 32 are formed at both ends of the lower surface 22 of the m-edge substrate 2 for bonding to a printed circuit board (PCB) using surface mounting technology (Surface Moum Lamp, SMT). In this embodiment, the insulating substrate 2 is an alumina (A1203) ceramic insulating substrate. The main electrode 3 丨 and the lower electrode 32 are formed by screen printing, and are conductive paste (3) plus paste. Made of, for example, silver glue. Next, in step 12, as shown in FIG. 3, a thin film is deposited on the upper surface 21 of the insulating substrate 2 to form a resistive film 4. Due to the feature of no region selection for thin film deposition, the resistive film 4 will cover the exposed portion of the upper surface 21 of the insulating substrate 2 and the two main electrodes 31. The resistive film 4 of this example can be formed by sputtering (Sputter Depoltlon) and is a multilayer thin film formed of titanium tungsten alloy (Tiw) and manganese copper alloy (Μα). However, those skilled in the art should know that Resistive film 4 / formed using other species such as steamed (Evap〇rati〇n) Wangli vapor deposition technology (PVD), or chemical vapor deposition technology (cvd) to form, and resistance \ 4 materials Beco is only one kind of titanium-tungsten alloy and manganese-copper alloy, or other types of resistance materials, and should not be limited to the description of this embodiment. P side in step 1 ^, 3 is shown in Figure 4, using a screen The first protective layer 51 is printed on the electrodes and amines on the area where the special electrode is to be retained. In conjunction with the first protective exhibition of FIG. 5 in this example, 51 is a rectangular block formed on the two main electrodes 20 1237898 And the inner part of the two main electrodes 31 (that is, the part that is in contact with the resistance film 4 located between the two main electrodes 3) on the resistive film 4 ', and its material f is amorphous silicon oxide (also known as glass glue). Compared with the conventional photoresist, the complicated steps of exposure and development are needed to define the pattern of the resistive film. Since the screen printing 5 has regional selectivity, the first protective layer 51 can be directly formed on the resistive film 4 to be retained, and the resistive film 4 to be removed remains bare, so that the resistive film 4 can be easily defined. The pattern makes this case clearly simplify the tedious process of the conventional technology. In addition, when the resistance value is to be adjusted, as shown in FIG. 6, the first protective layer 51 may also allow the inner part of the resistance film 4 on the two main electrodes 31 to be partially exposed, such as ίο &-A u-shaped groove 511 is formed on the side to change the resistance value of the resistive film 4 due to the change in shape after the etching. Therefore, the shape of the first protective layer 51, 51, can be determined according to design requirements, and only The first protective layer 51 between the two electrodes 31 needs to be extended without interruption (to avoid the interruption of the resistive film 4 between the two electrodes μ between the electrodes after etching) and 15 胄 adjacent to the main electrode 31. The conditions for exposing the resistance film 4 are not limited to those disclosed in this embodiment. Then, in step 14, as shown in FIG. 7, the _th protective layer Η is used as a mask, and the mask is used. (Etching) remove the bare part of the resistance film 4 ( The outer portion of the resistive film 4 on the main electrode 31) to transfer the pattern of the first protective layer 51 to the resistive film 4 'to form the pattern of the resistive film 4. 20 For example, the titanium tungsten alloy in the resistive film 4 ㈣ can be performed using h2o2 under a temperature pit machine. As for the _alloy in the resistive film 4, it can be etched using _3 + Ηα at a temperature of 23 ° C ± 2t. After the pattern of the resistive film 4 is formed in step μ ' Unlike the conventional photoresistor photoresist, the first protective layer 51 does not need to be removed ', which can prevent the resistive film 4 from being stained or oxidized due to photoresist removal, the photoresist is not completely removed, and the resistive film 4 is accidentally removed. When this happens, the characteristics of the film 4 are more stable than the conventional thin film resistors in order to achieve the effect of long: high yield. 5 10 15 Resistance Figure 8 and Figure 9. In step 15, in order to make the ^ value of the resistance film 4 & standard required, the trimming of the resistance value (Trim Li) will be performed. This class of equipment comes from the standard resistance value of the ESC. A fine-tuning groove 41 is formed, and the micro layer is used in step 16: as shown in FIG. 10, and the first layer 51 and the resistive film 4 are covered by screen printing. The first-partner ^ 1 'protects; protects the first protection 〇 The material of the first layer 52 of the first one is epoxy resin. After you dare, in step 17, add m "^ plating method to two of the insulating substrate 2: both ends = in the electrical example such as barrel plating, 'the pole on the electrical chain: = :::: 26. In this case The upper-layer end-face conductive film 6 is implemented on both sides of the core substrate 2 and the bottom electrode 32. The upper-end surface is electrically conductive and the end-face conductive film 61 9 is the electrode 6 to form two flat electrodes sandwiched between the two ends of the insulating base. The U-shapes are all rotten ,. Preface Lei jealous, I 1 electrode ° The end electrode 6 in this example is a multi-layer alloy of sequential electro-mineral copper (〇〇, record (Ni) and tin (Sn). = Previously described It is different from the conventional thin-film resistor to use the photoresist to be removed to make the invention. The first resistive film with area selectivity and no need to be removed is used to etch the resist film 4. Not only because the removal is omitted The photoresistive step-by-step manufacturing process is omitted, and the step of removing photoresistance is omitted; the continuous elimination of electricity and separation from the outside == ^ = good = the invention's resistive film characteristics are more stable, which can achieve better ^ 20 1237898 However, the above are only the preferred embodiments of the present invention. When the scope of implementation of the present invention cannot be limited by this, that is, where the scope of patent application according to the present invention and The simple equivalent changes and modifications made in the content of the description should still fall within the scope of the patent of the present invention. 5 10 15 20 [Circular Description] Figure 1 is a preferred embodiment of a method for manufacturing a thin film resistor according to the present invention. FIG. 2 is a schematic cross-sectional view of a process for forming an electrode on the surface of an insulating substrate in the embodiment of FIG. I; FIG. 3 is a schematic cross-sectional view of a process for forming a resistance film on an insulating substrate in the embodiment of FIG. 1; The process of forming the first protective layer on the resistive film in the example is a schematic cross-sectional view; ~ FIG. 5 疋 The top view of an example of forming the first protective layer on the resistive film in the real yoke example of FIG. 1; 1 is a top view of another example of forming a first protective layer on a resistive film in the embodiment; FIG. 7 is a schematic cross-sectional view of a process of etching the resistive film in the embodiment of FIG. 1; FIG. 8 is a trimming of the resistance value in the embodiment of FIG. Fig. 9 is a schematic top view of the resistance trimming process of Fig. 8; Fig. 10 is a cross-sectional audio chart of the process of forming a second protective layer in the embodiment of Fig. 1; and ~ Fig. 11 is the implementation of Fig. 1 Example of the process of forming the end electrode in the example Schematic diagram 10 25 1237898 [Description of the main symbols of the main type] 11 ~ 17 Step 41 Fine-tuning the trench 2 Insulating substrate 5 1, 5 Γ Upper surface of the first protective layer 21 511 'U-shaped groove 22 lower surface 52 Second protective layer 3 1 Main electrode 6 End electrode 32 Lower electrode 61 End conductive film 4 Resistive film 11