1230838 08466 pif 1 九、發明說明： 所屬的技術慑域 本發明爲關於電子束曝光裝置、電子束曝光方法及半 導體元件製造方法。又，本申請案與下述之日本專利申請 案有關聯’如申請專利的國家認可編入之參考文獻，下述 的申請案記載的內容，可編入本申請案，成爲本申請案記 述之一部分。 曰本專利申請案，特願2000-351055 申請日期平成12年11月17日 習知技術 習用之電子束曝光裝置爲利用複數的電子束在晶圓 (wafer)曝光圖案，用複數個偏向器將複數的電子束個別獨 立偏向照射晶圓的預定位置。 但是，有複數電子束近接照射的電子束曝光裝置，gj 複數的電子束互相排拒之庫倫(coulomb)反射力，複數的電 子束在晶圓上精密照射有困難。因此，在晶圓上把圖案高 精度曝光是很困難的。 本發明以提供能解決上述問題的電子束曝光裝置，_ 子束曝光方法及半導體元件製造方法爲目的。此目的，可 由申請專利範圍各獨立項所述之特徵的組合達成。又，附 屬項規定本發明更有利的具體例。 解決問穎的羊跺 爲達成上述之目的，本發明之第1例的電子束曝光裝 置，爲複數之電子束在晶圓曝光之裝置，具備有： 1230838 08466 pif 1 電子束發生部，可產生複數的電子束。 第一偏向部，將複數的電子束獨立偏向。 電流量取得部，個別取得各電子束之電流量。 修正値計算部，依據電流量計算修正複數電子束的照 射位置之修正値。以及 偏向控制部，依據修正値控制偏向部。 如加設反射力計算部，依據電流量計算複數之電子束 相互排拒的反射力。修正値計算部即依反射力，計算修正 値也可以。 亦可加設成形部件，將複數的電子束之斷面，依所望 之形狀成形。第一偏向部即設於成形部件與晶圓之間，形 成部件將複數之電子束的斷面，分別依所定之面積與形狀 成形。電流量取得部，依據電流量及所定的面積，取得通 過成形部的電子束之電流量。修正値計算部’依據通過成 形部件的電子束之電流量，計算修正値。偏向控制部’根 據修正値控制通過成形部件的電子束之照射位置。 亦可加設第一及二成形部件，第一成形部件將複數的 電子束之斷面成形，再用第二成形部’將通過第一成形部 件的複數之電子束的斷面，形成所望之形狀。第一偏向部’ 設於第一成形部件與第二成形部件之間’偏向控制部’控 制通過第一成形部件之電子束的照射位置。 第一成形部件，有形成複數電子束之斷面的複數的開口部。電流 量取得部，根據電流量及複數的開口部之大小，取得通過第一成形部 件的電子束之電流量。修正計算部，依據通過第一成形部件的電子束 1230838 08466 pif 1 之電流量，計算修正値。偏向控制部依修正値，控制通過第一成形部 件的電子束之照射位置之方式，亦可。 或再加設第二偏向部於第二成形部件與晶圓之間，以 獨立偏向複數的電子束。第二成形部件，將複數的電子束 個別形成所定的面積之形狀。電流取得部，依電流量及所 定的面積，取得通過第二成形部件的電子束之電流量。修 正値計算部依據通過第二成形部件的電子束之電流量，計 算修正値。偏向控制部據此修正値，控制通過第二成形部 件的電子束之照射位置。 本發明的第2例之電子束曝光方法，係利用複數的電 子束在晶圓上曝光圖案。包含有：電子束發生階段，發生 複數的電子束。及電流量取得階段’取得上述複數的電子 束之各別的電流量。及修正値計算階段’依據電流量計算 修正複數的電子束照射位置偏離的修正値。及曝光階段’ 根據修正値將複數的電子束獨立偏向曝光。 ^ 本發明之第3例之半導體元件的製造方法，爲利用複 數的電子束在晶圓上圖案曝光製造半導體元件之方法，分 爲電子束發生階段，發生複數的電子束’及電流量取得階 段，取得上述複數的電子束之各別的電流量。及修正値計 算階段，依據上述電流量，算出該複數的電子束之照射位 置偏離的修正値。以及曝光階段，依據上述修正値’將前 述複數的電子束，獨立偏向曝光。 上述之槪要，未全部列舉本發明之必要特徵，該些特 徵群之副組合又可能成爲發明。因此，本發明之保護範圍， 1230838 08466 pif 1 當視後附之申請專利範圍所界定者爲準。 圖式之簡單說明 第1圖示本發明實施例之電子束曝光裝置100之構成。 第2圖示本實施例之控制系統140構成之一例。 第3圖示本實施例之半導體元件製造工程的流程圖之 一例。 標號之簡單說明 10電子槍 14第一成形部件 16第一多軸電子鏡 18第一成形偏向部 20第二成形偏向部 22第二成形部作 24第二多軸電子透鏡 26消隱電極陣列 28電子束遮蔽部件 34第三多軸電子透鏡 36第四多軸電子透鏡 38偏向部 40電子檢測部 44晶圓 46晶圓載盤 48晶圓載盤驅動部 52第五多軸電子透鏡 1230838 08466 pif 1 100電子束曝光裝置 110電子束成形部 112照射切換部 114晶片投影系統 120個別控制部 130統括控制系統 140曝光控制系統 150曝光部 較佳實施例 以下’藉貫施例§兌明本發明’但該實施例並不界限本 發明之專利保護範圍，又實施例說明的特徵之組合，並不 限定全部都爲解決問題所必需要的。 第1圖示本發明實施例的電子束曝光裝1〇〇之構成。 電子束曝光裝置100備有曝光部150，用電子束對晶圓44 施行預定的曝光處理。及控制系統140，控制曝光部150所 包含各機構的動作。 曝光部150置於框體8內部，其組成包含下述電子光 學系統。電子束成形部110,將電子束之斷面形成所望之形 狀。及照射切換部112，可依複數的電子束要否照射晶圓， 分別獨立切換電子束。以及晶圓投影系統114,調整在晶圓 轉錄的圖案之方向及大小。曝光部150設有載盤系統，該 系統包含裝載要曝光圖案之晶圓44的晶圓載盤46,及驅動 晶圓載盤46的晶圓載盤驅動部48。曝光部150尙備有電子 檢測部40，檢測電子束照射到設於晶圓44或晶圓載盤46 1230838 08466 pif 1 的標記(mark)部，由標記部放射之二次電子或反射電子等。 電子檢測部40，依檢測之反射電子量，輸出對應之檢測信 號至反射電子處理部94。 電子束成形部110備有：發生複數電子束的電子槍10。 及，因電子束通過，將電子束之斷面形狀成形的有複數開 口的第一成形部件14與第二成形部件22。及，能各別獨立 聚集複數的電子束，調整複數的電子束焦點的第一多軸電 子透鏡16。以及將通過第一成形部件14的複數電子軸獨立 偏向之第一成形偏向部18與第二成形偏向部20。 照射切換部112備有：第二多軸電子透24，可獨立聚 焦複數的電子束，並調整複數電子束之焦點。及，消隱電 極列陣26，利用其個別獨立偏向複數的電子束，獨立切換 各電子束是否照射晶圓44。以及，電子束遮蔽部件28，設 有電子束通過的複數之開口部，用以遮蔽在消隱電極陣列 26偏向之電子束。在其他之例，消隱電極陣列26用消穩孔 口陣列(blanking aperture arraydevice)替代亦可。 晶圓投影系統114備有：第三多軸電子透鏡34，可各 別獨立聚焦複數的電子束，並縮小電子束之照射半徑。及， 第四多軸電子透鏡36，可各別獨立聚焦複數的電子束，並 調整複數電子束之焦點。及，偏向部38，對複數的電子束 個別獨立偏向，使各電子束照射晶圓44的所望位置。以及， 第五多軸電子透52,作爲對晶圓44的對物之機能，可個別 獨立聚焦複數的電子束。 控制系統140,包含個別控制部120及統括控制部130。 1230838 08466 pif 1 個別控制部120又分爲電子束控制部80、多軸電子透鏡控 制部82、成形偏向控制部84、消隱電極陣列控制部86、偏 向控制部92、反射電子處理部94、及晶圓載盤控制部96。 統括控制部130分爲電流量取得部132,其功能爲取得複數 電子束的電流量，及修正値計算部136,依據該電子束的電 流量，計算修正複數之電子束的照射位置的修正値。統括 控制部130就如一個工作站(work station)，並統括控制個別 控制部120包含之各控制部。 電子束控制部80,控制電子槍10。多軸電子透鏡部82, 控制供給第一多軸電子透鏡16、第二多軸電子透鏡24、第 三多軸電子透鏡34、第四多軸電子透鏡36及第五多軸電子 透鏡52的電流。成形偏向控制部84，控制第一成形偏向部 18及第二成形偏向部20。消穩電極陣列控制部86，控制消 隱電極陣列26中之偏向電極的施加電壓。偏向控制部92， 控制在偏向部38中之複數偏向器的偏向電極之施加電壓。 反射電子處理部94，依據電子檢測部40輸出之檢測信號， 檢出反射電子的量，通知統括控制部130。晶圓載盤控制部 96，控制晶圓載盤驅動部48，移動晶圓載盤46到所定之位 置。 本實施例的電子束曝光裝置100之動作說明。先說明 修正處理電子束照射位置時的動作，電流量取得部132，取 得複數之電子槍10發生複數之電子束的電流量。修正値計 算部136，依據電流量取得部132取得之電流量，計算修正 複數之電子束之照射位置的修正値。然後，成形偏向控制 1230838 08466 pif 1 部84，依據該修正値，控制第一成形偏向部18與第二成形 偏向部20。偏向控制部92,依據該修正値，控制偏向部38。 以下說明，在曝光處理時，電子束曝光裝置1〇〇之動作’ 惟，電子束曝光裝置100在曝光處理時，常並行上述之修 正處理，依據複數的電子束的電流量，計算修正複數的電 子束之照射位置的修正値，再利用該修正値進行晶圓44之 曝光處理較佳。 複數的電子槍10產生複數的電子束。在第一成形部件 14，該複數電子束照射並通過第一成形部件的複數開口 部，形成圖形。在其他的例有用分割方法將電子槍10發生 的電子束，分成複數的電子束。 第一多軸電子透鏡16，可將形成矩形的複數之電子束 獨立聚焦，對每一電子束調整其對第二成形部件22的焦 點。第一成形偏向部18，把在第一成形部件14形成矩形狀 的複數之電子束，各別獨立偏向，使照射在第二成形部件 的預定位置。 第二成形偏向部20,將在第一成形偏向部18偏向的複 的電子束，各別偏向成對第二成形部件22略成垂直之方 向，照射在第二成形部件22。然後，有矩形複數之開口部 的第二成形部件22,將照射在第二成形部件22的矩形斷面 形狀的複數之電子束，再變成照射晶圓44所要全部的電子 束之斷面形狀。 第二多軸電子透鏡24之動作爲，獨立聚焦複數的電子 束，分別獨立調整對準消隱電極陣列26的電子束之焦點。 12 1230838 08466 pif 1 然後，在第二多軸電子透鏡24各別調整焦點的複數之電子 束，通過消隱電極陣列26含有之複數的照孔（aperture)。 消隱電極陣列控制部86,控制設於消隱電極陣列26的 各照孔近傍之偏向電極是否施加電壓。消隱電極陣列26， 即依據偏向電極施加之電壓，切換電子束是否照射晶圓44。 未在消隱電極陣列26偏向之電子束，通過第三多軸電 子透鏡34。然後，第三多軸電子透鏡34將通過的電子束之 束徑縮小。縮小後之電子束通過電子束遮蔽部件28之開口 部。又，電子束遮蔽部件28，可遮蔽消隱電極陣列26偏向 的電子束。通過電子束遮蔽部件28的電子束，射入第四多 軸電子透鏡36,第四多軸電子透鏡36分別將射入之電子束 獨立聚焦，對準偏向部38個別調整電子束之焦點。經第四 多軸電子透鏡36調整焦點之電子束，射入偏向部38。 偏向控制部92，控制偏向部38所有複數的偏向器，將 射入偏向部38之各電子束，獨立偏向對準晶圓44上的全 部照射位置。第五多軸電子透鏡52，爲調整通過第五多軸 電子透鏡52的各電子束對晶圓44之焦點。如此，具有照 射晶圓44所需全部斷面形狀的各別電子束，可照射到晶圓 44的全部預定位置。 曝光處理時，晶圓載盤驅動部48，依晶圓載盤控制部 96之指不，使晶圓載盤46沿一定方向連續移動。然後，配 合晶圓44之移動，將電子束之斷面形成照射晶圓44所需 全部的形狀，並決定全部照射晶圓44的電子束通過的照 孔，再依偏向部38個別偏向各電子束，對準晶圓44需照 13 1230838 08466 pif 1 射之全部位置。就可在晶圓44曝光所設定的電路圖案。 第2圖示本實施例有關之控制系統140之構成的一 例。控制系統140包括統括控制部130及個別控制部120。 統括控制部130包括：曝光圖案收納部131，收容對晶圓 44曝光之全部曝光圖案。曝光資料生成部133，依據曝光 圖案收納部131收容之曝光圖案，產各電子束在全部曝光 區域之曝光圖案的曝光資料。電流量取得部132,取得複數 之電子槍10發生複數之電子束所需各電流量。反射力計算 部134，依據電流量取得部之各所需電流量，計算複數之電 子束相互排拒之反射力。修正値計算部136，依據上述之反 射力，計算修正複數之電子束的照射位置之修正値。及曝 光資料修正部135，依上述之修正値，修正曝光資料生成部 133產生之曝光資料。個別控制部120包括： 電子束控制部80，控制電子槍10，成形偏向控制部84，控 制第一成形偏向部18與第二成形偏向部20，偏向控制部 92，控制偏向部38。 本實施例之控制系統140的動作說明如下。曝光生成 部133依據曝光圖案收納部131，收容之曝光圖案，產生曝 光資料，輸出至曝光資料修正部135。另一方面，電流量取 得部132，由電子束控制部80，取得電子槍10發生電子束 的電流量。又，電流量取得部132，依據電子槍10發生電 子束之電流量，及第一成形部件14之通過電子束的開口部 之大小，取得通過第一成形部件14之電子束的電流量。 反射力計算部134，依據通過第一成形部件14之電子 14 1230838 08466 pif 1 束的電流量，計算複數之電子束相互排拒之反射力。修正 値計算部136，依據由通過第一成形部件14之電子束的電 流量計算之反射力，推算修正通過第一成形部件14之電子 束的照射位置之修正値。其次，成形偏向控制部84，依據 該修正値，控制設置於第一成形部件14與第二成形部件22 之間，的第一成形偏向部18與第二成形偏向部20，使通過 第一成形部件14之電子束，照射在第二成形部件22的所 定之位置。 又以電流量取得部132,受取曝光資料生成部133產生 的曝光資料，再依據電子槍10發生電子束的電流量與第二 成形部件22形成的電子束斷面的面積，取得通過第二成形 部件22之電子束的電子量亦佳。此時，反射力計算部134， 可依據通過第二成形部件22之電子束的電流量，算出複數 之電子束相互排拒之反射力，修正値計算部136，由通過第 二成形部件22之電子束的電流量算出之反射力，計算修正 通過第二成形部件之電子束的照射位置之修正値。偏向控 制部92，依據該修正値，控制設於第二成形部件22與晶圓 44之間的偏向部38，使通過第二成形部件22之電子束， 照射晶圓44之預定位置。在其他的實施例，另有依據電子 槍10發生電子束的電流量’或在第一成形部件18成形之 電子束的電流量，來修正通過第二成形部件22之電子束的 照射位置。 本實施例之電子束曝光裝置丨〇〇,依據複數的電子束之 庫倫(coulomb)力相互排拒之反射力，計算修正電子束之照 15 1230838 08466 pif 1 射位置的修正値，可使電子束照射到預定之位置。具體的 說，是依據通過第一成形部件14之電子束的電流量，計算 修正電子束對第二成形部件22的照射位置之修正値，利用 該修正値控制第一成形偏向部18及第二成形偏向部20,可 使用電子束精確照射第二成形部件22的預定位置。又，根 據通過第二成形部件22之電子束的電流量，算出修正電子 束對晶圓44之照射位置的修正値，再利用該修正値控制偏 向部38，就可使電子束精確照射晶圓44的預定位置，故可 在晶圓44精確地曝光圖案。 第3圖示本實施例之半導體元件製造工程的流程圖之 一例。S10爲本流程開始。S12爲在晶圓上面光阻(photoresist) 塗佈，然後，光阻塗布之晶片44,置於電子束曝光裝置100 的晶圓載盤46上。晶圓44便如第1圖所示，經一多軸電 子透鏡16，第二多軸電子透鏡24、第三多軸電子透鏡34、 及第四多軸電子透鏡36獨立調整複數的電子束之焦點的焦 點調整工程以及依消隱電極陣列26的獨立切換各電子束是 否照射晶圓44的照射切換工程，因電子束對晶圓44照射， 圖案曝光轉錄。 然後，在S14曝光的晶圓44，浸入顯像液顯像，除去 殘留之光阻(S16)。接著，在S18用等離子(plasma)之非等向 性蝕刻法，蝕刻在晶圓44上除去光阻之區域存在的矽基 板、絕緣膜或導電膜。在S20在晶圓注入硼或砷等不純物 形成電晶體或二極管等半導體元件，在S22施行熱處理， 活性化注入之不純物。在S24，用藥液洗淨晶圓，以除去晶 16 1230838 08466 pif 1 圓44上之有機污染物或金屬污染物。在S26進行導電膜或 絕緣膜之成膜，以形成配線層及配線間的絕緣層。S12〜S26 之工程組合重覆進行，即可在晶圓製造具有元件分離區 域、元件區域及配線層之半導體元件。在S28，分割已形成 所設電路的晶圓，進行晶片（cMp)之組合。S30半導體元件 製造流程完成。 以上說明之實施例，本發明之專利申請案之技術範圍 並不限定上述之形態。上述實施例加上多種變更可實施本 發明申請專利範圍所述之事項，皆屬本發明之技術範圍。 因此，本發明之保護範圍，當視後附之申請專利範圍所界 定者爲準。 發明之效果 如上所述，本發明可提供，能把複數的電子束精確照 射晶圓上預定位置的電子束曝光裝置。1230838 08466 pif 1 IX. Description of the invention: Technical field to which the invention belongs The present invention relates to an electron beam exposure device, an electron beam exposure method, and a method for manufacturing a semiconductor element. In addition, this application is related to the following Japanese patent application 'If, for example, a reference approved by the country where the patent is applied for is incorporated, the content described in the following application may be incorporated into this application and become part of the description of this application. This patent application, Japanese Patent Application No. 2000-351055, application date: November 17, 2012. The conventional electron beam exposure device uses a plurality of electron beams to expose a pattern on a wafer, and uses a plurality of deflectors to expose the pattern. The plurality of electron beams are individually biased toward a predetermined position on the irradiated wafer. However, there is an electron beam exposure device for multiple electron beams to be irradiated in close proximity, and the cojmb reflection force of gj and multiple electron beams repels each other. It is difficult to precisely irradiate the multiple electron beams on the wafer. Therefore, it is difficult to accurately expose patterns on a wafer. The present invention aims to provide an electron beam exposure apparatus, a sub-beam exposure method, and a semiconductor device manufacturing method that can solve the above-mentioned problems. This objective can be achieved by a combination of features described in each independent item of the scope of patent application. The appended clauses provide specific examples of the present invention which are more advantageous. In order to achieve the above-mentioned object, the electron beam exposure device according to the first example of the present invention is a device for exposing a plurality of electron beams on a wafer, and includes: 1230838 08466 pif 1 electron beam generation unit, which can generate Plural electron beams. The first deflection section deflects a plurality of electron beams independently. The current amount acquisition unit acquires the current amount of each electron beam individually. The correction unit calculates a correction unit that corrects the irradiation position of the complex electron beam based on the amount of current. And the deflection control unit controls the deflection unit based on the correction. If a reflection force calculation unit is added, the reflection force of the plurality of electron beams to be mutually rejected is calculated based on the amount of current. The correction unit calculates the correction unit based on the reflection force. Shaped parts can also be added to shape the cross-sections of multiple electron beams into desired shapes. The first deflection portion is provided between the forming member and the wafer, and the forming member shapes the cross sections of the plurality of electron beams according to a predetermined area and shape, respectively. The current amount obtaining section obtains the current amount of the electron beam passing through the forming section based on the current amount and a predetermined area. The correction unit ’calculates the correction unit based on the amount of current of the electron beam passing through the forming member. The deflection control section 'controls the irradiation position of the electron beam passing through the forming member based on the correction. It is also possible to add first and second forming parts. The first forming part shapes the cross section of the plurality of electron beams, and then the second forming part will pass the cross sections of the plurality of electron beams of the first forming part to form the desired shape. The first deflection section 'is provided between the first forming member and the second forming member. The' deflection control section 'controls the irradiation position of the electron beam passing through the first forming member. The first forming member has a plurality of openings forming a cross-section of the plurality of electron beams. The current amount obtaining unit obtains the current amount of the electron beam passing through the first forming member based on the current amount and the size of the plurality of openings. The correction calculation unit calculates the correction 依据 based on the amount of current of the electron beam 1230838 08466 pif 1 passing through the first forming member. The deviation control unit may control the irradiation position of the electron beam passing through the first forming member in accordance with the correction 値. Or, a second deflection portion is further provided between the second forming member and the wafer to independently deviate a plurality of electron beams. The second forming member individually forms a plurality of electron beams into a predetermined area shape. The current obtaining unit obtains the amount of current of the electron beam passing through the second forming member based on the amount of current and the predetermined area. The correction unit calculates the correction unit based on the amount of current of the electron beam passing through the second forming member. Based on this, the deflection control unit corrects 値 and controls the irradiation position of the electron beam passing through the second forming member. An electron beam exposure method according to a second example of the present invention uses a plurality of electron beams to expose a pattern on a wafer. Contains: the electron beam generation stage, the generation of a plurality of electron beams. And the current amount acquisition stage 'acquires the respective current amounts of the plurality of electron beams. And correction (calculation stage), which calculates the correction of the deviation of plural electron beam irradiation positions based on the amount of current. And the exposure stage ’, the plurality of electron beams are independently biased toward the exposure according to the correction angle. ^ The method for manufacturing a semiconductor device according to the third example of the present invention is a method for manufacturing a semiconductor device by pattern exposure on a wafer using a plurality of electron beams, and is divided into an electron beam generation stage, a plurality of electron beams, and a current acquisition stage. To obtain the respective current amounts of the plurality of electron beams. In the calculation stage of correction and correction, based on the current amount, the correction correction of the deviation of the irradiation position of the plurality of electron beams is calculated. And at the exposure stage, the aforementioned plurality of electron beams are independently biased toward the exposure in accordance with the correction 値 '. The above-mentioned main points do not all list the essential features of the present invention, and the sub-combinations of these characteristic groups may become inventions. Therefore, the scope of protection of the present invention is 1230838 08466 pif 1 as determined by the scope of the attached patent application. Brief Description of the Drawings Fig. 1 illustrates the configuration of an electron beam exposure apparatus 100 according to an embodiment of the present invention. The second figure shows an example of the configuration of the control system 140 in this embodiment. Fig. 3 is an example of a flowchart of a semiconductor device manufacturing process of this embodiment. Brief description of reference numerals 10 Electron gun 14 First forming member 16 First multi-axis electron mirror 18 First forming deflection portion 20 Second forming deflection portion 22 Second forming portion 24 Second multi-axis electron lens 26 Blanking electrode array 28 electrons Beam shielding member 34 Third multi-axis electronic lens 36 Fourth multi-axis electronic lens 38 Deflection section 40 Electronic detection section 44 Wafer 46 Wafer tray 48 Wafer tray driving section 52 Fifth multi-axis electronic lens 1230838 08466 pif 1 100 Electronics Beam exposure device 110 Electron beam shaping unit 112 Irradiation switching unit 114 Wafer projection system 120 Individual control unit 130 Integrated control system 140 Exposure control system 150 Exposure unit Preferred embodiment The following 'exemplifies the present invention through the embodiment § but this implementation The examples do not limit the scope of patent protection of the present invention, and the combination of features described in the embodiments does not limit all that is necessary to solve the problem. The first diagram illustrates the structure of an electron beam exposure device 100 according to an embodiment of the present invention. The electron beam exposure apparatus 100 includes an exposure unit 150 and performs a predetermined exposure process on the wafer 44 using an electron beam. The control system 140 controls operations of each mechanism included in the exposure unit 150. The exposure section 150 is placed inside the housing 8 and its composition includes the following electro-optical system. The electron beam forming section 110 forms a cross section of the electron beam into a desired shape. And the irradiation switching unit 112 can independently switch the electron beams depending on whether a plurality of electron beams are to be irradiated to the wafer. And the wafer projection system 114 adjusts the direction and size of the pattern transcribed on the wafer. The exposure section 150 is provided with a tray system including a wafer tray 46 on which a wafer 44 to be exposed is patterned, and a wafer tray drive section 48 that drives the wafer tray 46. The exposure unit 150 is provided with an electron detection unit 40, and the detection electron beam is irradiated onto a mark portion provided on the wafer 44 or the wafer carrier 46 1230838 08466 pif 1, and secondary electrons or reflected electrons emitted from the mark portion are emitted. The electronic detection unit 40 outputs a corresponding detection signal to the reflected electron processing unit 94 according to the amount of reflected electrons detected. The electron beam forming unit 110 includes an electron gun 10 that generates a plurality of electron beams. Furthermore, the first beam forming member 14 and the second beam forming member 22 having a plurality of openings are formed by shaping the cross-sectional shape of the electron beam as the electron beam passes. Furthermore, the first multi-axis electron lens 16 is capable of focusing the plurality of electron beams independently and adjusting the focus of the plurality of electron beams. The first forming deflection portion 18 and the second forming deflection portion 20 independently deflect a plurality of electronic axes of the first forming member 14. The irradiation switching unit 112 is provided with a second multi-axis electron transmission 24 that can independently focus a plurality of electron beams and adjust the focus of the plurality of electron beams. In addition, the blanking electrode array 26 independently switches whether or not each of the electron beams irradiates the wafer 44 by using its individual independent biased plural electron beams. Also, the electron beam shielding member 28 is provided with a plurality of openings through which the electron beam passes to shield the electron beam biased by the blanking electrode array 26. In other examples, the blanking electrode array 26 may be replaced with a blanking aperture array device. The wafer projection system 114 is provided with a third multi-axis electron lens 34 which can individually focus a plurality of electron beams and reduce the irradiation radius of the electron beams. And, the fourth multi-axis electron lens 36 can individually focus the plurality of electron beams and adjust the focus of the plurality of electron beams. In addition, the deflection unit 38 individually deflects the plurality of electron beams individually, so that each electron beam irradiates a desired position of the wafer 44. And, the fifth multi-axis electron transmission 52 serves as an object-to-object function on the wafer 44 and can independently focus a plurality of electron beams individually. The control system 140 includes an individual control unit 120 and an integrated control unit 130. 1230838 08466 pif 1 The individual control unit 120 is further divided into an electron beam control unit 80, a multi-axis electronic lens control unit 82, a forming deflection control unit 84, a blanking electrode array control unit 86, a deflection control unit 92, a reflection electron processing unit 94, And wafer carrier control unit 96. The integrated control unit 130 is divided into a current amount acquisition unit 132, whose function is to obtain the current amount of a plurality of electron beams, and a correction unit 136 calculates a correction of the irradiation position of the correction plurality of electron beams based on the current amount of the electron beams. . The integrated control unit 130 is like a work station, and controls all control units included in the individual control unit 120 in an integrated manner. The electron beam control unit 80 controls the electron gun 10. The multi-axis electronic lens unit 82 controls the current supplied to the first multi-axis electronic lens 16, the second multi-axis electronic lens 24, the third multi-axis electronic lens 34, the fourth multi-axis electronic lens 36, and the fifth multi-axis electronic lens 52. . The forming deflection control section 84 controls the first forming deflection section 18 and the second forming deflection section 20. The stabilizing electrode array control unit 86 controls the voltage applied to the bias electrode in the blanking electrode array 26. The deflection control unit 92 controls the voltage applied to the deflection electrodes of the plurality of deflectors in the deflection unit 38. The reflected electron processing unit 94 detects the amount of reflected electrons based on a detection signal output from the electronic detection unit 40 and notifies the integrated control unit 130. The wafer carrier control unit 96 controls the wafer carrier driving unit 48 to move the wafer carrier 46 to a predetermined position. The operation of the electron beam exposure apparatus 100 of this embodiment will be described. The operation when the electron beam irradiation position is corrected is explained. The current amount acquisition unit 132 obtains the current amount of the electron beams generated by the plurality of electron guns 10. The correction unit calculation unit 136 calculates a correction unit for correcting the irradiation position of the plurality of electron beams based on the current amount obtained by the current amount acquisition unit 132. Then, the forming deflection control 1230838 08466 pif 1 section 84 is used to control the first forming deflection section 18 and the second forming deflection section 20 based on this correction. The deflection control unit 92 controls the deflection unit 38 based on the correction 値. The following explains the operation of the electron beam exposure device 100 during the exposure process. However, during the exposure process, the electron beam exposure device 100 often performs the above-mentioned correction process, and calculates the number of corrections based on the current amount of the plurality of electron beams. It is preferable that the correction position of the irradiation position of the electron beam is used to perform the exposure processing of the wafer 44 using the correction position. The plurality of electron guns 10 generate a plurality of electron beams. In the first forming member 14, the plurality of electron beams are irradiated and passed through the plurality of openings of the first forming member to form a pattern. In other examples, the electron beam generated by the electron gun 10 is divided into a plurality of electron beams by a division method. The first multi-axis electron lens 16 can independently focus a plurality of rectangularly formed electron beams, and adjust the focal point of the second forming member 22 for each electron beam. The first forming deflection section 18 deflects a plurality of rectangular electron beams formed on the first forming member 14 independently, and irradiates the electron beams at predetermined positions of the second forming member. The second forming deflection section 20 deflects the complex electron beams deflected in the first forming deflection section 18 toward the pair of second forming members 22 in a direction slightly perpendicular to the second forming members 22, respectively, and irradiates the second forming member 22. Then, the second forming member 22 having a plurality of rectangular openings irradiates a plurality of electron beams having a rectangular cross-sectional shape on the second forming member 22 to a cross-sectional shape of all the electron beams required to irradiate the wafer 44. The operation of the second multi-axis electron lens 24 is to focus the plurality of electron beams independently and adjust the focal points of the electron beams aligned with the blanking electrode array 26 independently. 12 1230838 08466 pif 1 Then, the plurality of electron beams whose focal points are individually adjusted in the second multi-axis electron lens 24 pass through the plurality of apertures contained in the electrode array 26 by blanking. The blanking electrode array control unit 86 controls whether or not a voltage is applied to the deflection electrode in the vicinity of each illumination hole provided in the blanking electrode array 26. The blanking electrode array 26 switches whether the electron beam irradiates the wafer 44 according to the voltage applied to the bias electrode. The electron beams not deflected by the blanking electrode array 26 pass through the third multi-axis electron lens 34. Then, the third multi-axis electron lens 34 reduces the beam diameter of the passing electron beam. The reduced electron beam passes through the opening of the electron beam shielding member 28. The electron beam shielding member 28 shields the electron beams deflected by the blanking electrode array 26. The electron beam passing through the electron beam shielding member 28 is incident on the fourth multi-axis electron lens 36. The fourth multi-axis electron lens 36 independently focuses the incident electron beam, and individually adjusts the focus of the electron beam by aligning the deflection portion 38. The electron beam whose focus is adjusted by the fourth multi-axis electron lens 36 enters the deflection portion 38. The deflection control unit 92 controls all of the plurality of deflectors of the deflection unit 38, and independently deviates each of the electron beams incident on the deflection unit 38 to the entire irradiation position on the alignment wafer 44. The fifth multi-axis electron lens 52 adjusts the focus of each electron beam passing through the fifth multi-axis electron lens 52 on the wafer 44. In this way, the respective electron beams having all the cross-sectional shapes required to irradiate the wafer 44 can be irradiated to all predetermined positions of the wafer 44. During the exposure process, the wafer carrier driving unit 48 continuously moves the wafer carrier 46 in a certain direction according to the direction of the wafer carrier control unit 96. Then, in accordance with the movement of the wafer 44, the cross-section of the electron beam is formed into all the shapes required to irradiate the wafer 44, and the irradiation holes through which all the electron beams irradiating the wafer 44 pass are determined, and the electrons are individually deflected by the deflection unit 38. Beam, aiming at wafer 44 requires all positions shot at 13 1230838 08466 pif 1. The set circuit pattern can be exposed on the wafer 44. Fig. 2 shows an example of the configuration of the control system 140 according to this embodiment. The control system 140 includes an integrated control unit 130 and an individual control unit 120. The integrated control unit 130 includes an exposure pattern storage unit 131 that stores all the exposure patterns exposed on the wafer 44. The exposure data generating unit 133 generates the exposure data of the exposure pattern of each electron beam in the entire exposure area based on the exposure pattern stored in the exposure pattern storage unit 131. The current amount obtaining unit 132 obtains each amount of current required for the plurality of electron guns 10 to generate a plurality of electron beams. The reflection force calculation unit 134 calculates the reflection force of the plurality of electron beams which mutually exclude each other, based on each required current amount of the current amount acquisition unit. The correction chirp calculation unit 136 calculates a correction chirp of the irradiation position of the plurality of correction electron beams based on the above-mentioned reflection force. And the exposure data correcting section 135 corrects the exposure data generated by the exposure data generating section 133 in accordance with the correction 値 described above. The individual control unit 120 includes an electron beam control unit 80, a control electron gun 10, a forming deflection control unit 84, which controls the first forming deflection unit 18 and the second forming deflection unit 20, a deflection control unit 92, and a control deflection unit 38. The operation of the control system 140 in this embodiment is described below. The exposure generation unit 133 generates exposure data based on the exposure pattern stored in the exposure pattern storage unit 131, and outputs the exposure data to the exposure data correction unit 135. On the other hand, the current amount obtaining unit 132 obtains the current amount of the electron beam generated by the electron gun 10 by the electron beam control unit 80. The current amount acquisition unit 132 obtains the current amount of the electron beam passing through the first forming member 14 based on the amount of current generated by the electron beam of the electron gun 10 and the size of the opening of the first forming member 14 through the electron beam. The reflection force calculation unit 134 calculates the reflection force of the plurality of electron beams that are mutually exclusive based on the amount of current of the electrons 14 1230838 08466 pif 1 passing through the first forming member 14. The correction unit 136 calculates a correction unit for correcting the irradiation position of the electron beam passing through the first forming member 14 based on the reflection force calculated from the electric flux of the electron beam passing through the first forming member 14. Next, the forming deflection control section 84 controls the first forming deflection section 18 and the second forming deflection section 20 provided between the first forming member 14 and the second forming member 22 based on the correction, so that the first forming member passes through the first forming section. The electron beam of the member 14 is irradiated to a predetermined position of the second forming member 22. The current amount acquisition unit 132 and the exposure data generated by the exposure data generation unit 133 are further used to obtain the passage amount of the electron beam generated by the electron gun 10 and the area of the cross section of the electron beam formed by the second forming member 22 to obtain the passage through the second forming member. The electron quantity of the electron beam of 22 is also good. At this time, the reflection force calculation unit 134 can calculate the reflection force of the plurality of electron beams that are mutually exclusive based on the amount of current of the electron beam passing through the second forming member 22, and correct the calculation unit 136, The reflection force calculated from the current amount of the electron beam is used to calculate a correction value that corrects the irradiation position of the electron beam passing through the second forming member. The deflection control section 92 controls the deflection section 38 provided between the second forming member 22 and the wafer 44 based on the correction, so that the electron beam passing through the second forming member 22 irradiates a predetermined position of the wafer 44. In other embodiments, the irradiation position of the electron beam passing through the second forming member 22 is corrected based on the amount of current of the electron beam generated by the electron gun 10 or the amount of electron beam forming by the first forming member 18. The electron beam exposure device of this embodiment is based on the reflection force of the coulomb force of a plurality of electron beams, which calculates and corrects the electron beam exposure. 15 1230838 08466 pif 1 The beam is irradiated to a predetermined position. Specifically, based on the current amount of the electron beam passing through the first forming member 14, a correction 修正 for correcting the irradiation position of the electron beam on the second forming member 22 is calculated, and the first forming deflection portion 18 and the second are controlled using the correction 値. The forming deflection portion 20 can precisely irradiate a predetermined position of the second forming member 22 using an electron beam. In addition, based on the current amount of the electron beam passing through the second forming member 22, a correction angle of the irradiation position of the correction electron beam on the wafer 44 is calculated, and the deflection unit 38 is controlled by the correction angle, so that the electron beam can be accurately irradiated to the wafer 44 at a predetermined position, the pattern can be accurately exposed on the wafer 44. Fig. 3 is an example of a flowchart of a semiconductor device manufacturing process of this embodiment. S10 begins this process. S12 is photoresist coating on the wafer. Then, the photoresist coated wafer 44 is placed on the wafer carrier 46 of the electron beam exposure apparatus 100. As shown in FIG. 1, the wafer 44 passes through a multi-axis electronic lens 16, a second multi-axis electronic lens 24, a third multi-axis electronic lens 34, and a fourth multi-axis electronic lens 36 to independently adjust a plurality of electron beams. The focus adjustment process of the focus and the irradiation switching process of independently switching whether or not each electron beam irradiates the wafer 44 according to the blanking electrode array 26, because the electron beam is irradiated to the wafer 44, pattern exposure transcription. Then, the wafer 44 exposed at S14 is immersed in a developing solution for development, and the remaining photoresist is removed (S16). Next, in S18, a silicon substrate, an insulating film, or a conductive film existing in a region where the photoresist is removed on the wafer 44 is etched by a plasma anisotropic etching method. Impurities such as boron or arsenic are implanted in the wafer at S20 to form semiconductor elements such as transistors or diodes. Heat treatment is performed at S22 to activate the impure impurities. At S24, the wafer is washed with a chemical solution to remove organic or metal contaminants on the wafer 16 1230838 08466 pif 1 circle 44. In S26, a conductive film or an insulating film is formed to form a wiring layer and an insulating layer between wirings. The engineering combination of S12 ~ S26 is repeated, and a semiconductor device having a device separation area, a device area, and a wiring layer can be manufactured on a wafer. At S28, the wafers having the provided circuits are divided, and wafers (cMp) are combined. S30 semiconductor component manufacturing process is completed. In the embodiments described above, the technical scope of the patent application of the present invention is not limited to the aforementioned forms. The above embodiments plus various changes can implement the matters described in the patent application scope of the present invention, which all belong to the technical scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the scope of the appended patent application. Effects of the Invention As described above, the present invention can provide an electron beam exposure apparatus capable of accurately irradiating a plurality of electron beams at predetermined positions on a wafer.
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