JP2002158156A - Electron beam exposure system, electron beam exposing method, and method for fabricating semiconductor element - Google Patents
Electron beam exposure system, electron beam exposing method, and method for fabricating semiconductor elementInfo
- Publication number
- JP2002158156A JP2002158156A JP2000351055A JP2000351055A JP2002158156A JP 2002158156 A JP2002158156 A JP 2002158156A JP 2000351055 A JP2000351055 A JP 2000351055A JP 2000351055 A JP2000351055 A JP 2000351055A JP 2002158156 A JP2002158156 A JP 2002158156A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- correction value
- electron
- electron beams
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 227
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 238000000034 method Methods 0.000 title claims description 9
- 238000007493 shaping process Methods 0.000 claims description 51
- 238000000465 moulding Methods 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 230000001678 irradiating effect Effects 0.000 abstract description 5
- 238000001514 detection method Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
- H01J37/3045—Object or beam position registration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、電子ビーム露光装
置、電子ビーム露光方法、及び半導体素子製造方法に関
する。特に本発明は、複数の電子ビームをウェハに精度
よく照射させることができる電子ビーム露光装置に関す
る。[0001] 1. Field of the Invention [0002] The present invention relates to an electron beam exposure apparatus, an electron beam exposure method, and a semiconductor device manufacturing method. In particular, the present invention relates to an electron beam exposure apparatus capable of accurately irradiating a wafer with a plurality of electron beams.
【０００２】[0002]
【従来の技術】複数の電子ビームにより、ウェハにパタ
ーンを露光する従来の電子ビーム露光装置では、複数の
偏向器を用いて、複数の電子ビームをそれぞれ独立に偏
向してウェハの所望の位置に照射させている。2. Description of the Related Art In a conventional electron beam exposure apparatus for exposing a pattern on a wafer with a plurality of electron beams, a plurality of deflectors are used to independently deflect the plurality of electron beams to a desired position on the wafer. Irradiation.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、複数の
電子ビームが近接して照射される電子ビーム露光装置に
おいて、複数の電子ビームが相互に及ぼすクーロン反発
力により、複数の電子ビームをウェハに精度よく照射さ
せることが困難であった。そのため、ウェハにパターン
を精度よく露光することが非常に困難であった。However, in an electron beam exposure apparatus in which a plurality of electron beams are irradiated in proximity to each other, the plurality of electron beams are precisely applied to a wafer by the Coulomb repulsion exerted by the plurality of electron beams. Irradiation was difficult. Therefore, it has been very difficult to accurately expose a pattern on a wafer.
【０００４】そこで本発明は、上記の課題を解決するこ
とのできる電子ビーム露光装置、電子ビーム露光方法、
及び半導体素子製造方法を提供することを目的とする。
この目的は特許請求の範囲における独立項に記載の特徴
の組み合わせにより達成される。また従属項は本発明の
更なる有利な具体例を規定する。Accordingly, the present invention provides an electron beam exposure apparatus, an electron beam exposure method,
And a method for manufacturing a semiconductor device.
This object is achieved by a combination of features described in the independent claims. The dependent claims define further advantageous embodiments of the present invention.
【０００５】[0005]
【課題を解決するための手段】即ち、本発明の第１の形
態によると、複数の電子ビームにより、ウェハを露光す
る電子ビーム露光装置であって、複数の電子ビームを発
生する電子ビーム発生部と、複数の電子ビームを独立に
偏向する第１偏向部と、複数の電子ビームのそれぞれの
電流量を取得する電流量取得部と、電流量に基づいて、
複数の電子ビームの照射位置を補正する補正値を算出す
る補正値算出部と、補正値に基づいて、偏向部を制御す
る偏向制御部とを備える。According to a first aspect of the present invention, there is provided an electron beam exposure apparatus for exposing a wafer with a plurality of electron beams, wherein an electron beam generator for generating a plurality of electron beams is provided. A first deflecting unit that independently deflects the plurality of electron beams, a current amount obtaining unit that obtains a current amount of each of the plurality of electron beams,
A correction value calculation unit for calculating a correction value for correcting the irradiation positions of the plurality of electron beams, and a deflection control unit for controlling the deflection unit based on the correction values are provided.
【０００６】電流量に基づいて、複数の電子ビームが相
互に及ぼす反発力を算出する反発する反発力算出部をさ
らに備え、補正値算出部は、反発力に基づいて、補正値
を算出してもよい。[0006] A repulsive force calculating section for calculating a repulsive force exerted by a plurality of electron beams on the basis of the amount of current is further provided. The correction value calculating section calculates a correction value based on the repulsive force. Is also good.
【０００７】複数の電子ビームの断面を所望の形状に成
形する成形部材をさらに備え、第１偏向部は、成形部材
とウェハとの間に設けられており、成形部材は、複数の
電子ビームの断面をそれぞれ所定の面積を有する形状に
成形し、電流量取得部は、電流量及び所定の面積に基づ
いて、成形部材を通過する電子ビームの電流量を取得
し、補正値算出部は、成形部材を通過する電子ビームの
電流量に基づいて、補正値を算出し、偏向制御部は、補
正値に基づいて、成形部材を通過する電子ビームの照射
位置を制御してもよい。[0007] A shaping member for shaping the cross-sections of the plurality of electron beams into a desired shape is further provided, the first deflecting section is provided between the shaping member and the wafer, and the shaping member is provided with a plurality of electron beams. Each of the cross sections is formed into a shape having a predetermined area, and the current amount obtaining section obtains the current amount of the electron beam passing through the forming member based on the current amount and the predetermined area, and the correction value calculation section performs A correction value may be calculated based on the amount of current of the electron beam passing through the member, and the deflection control unit may control the irradiation position of the electron beam passing through the forming member based on the correction value.
【０００８】複数の電子ビームの断面を成形する第１成
形部材と、第１成形部材を通過した複数の電子ビームの
断面を所望の形状に成形する第２成形部材とをさらに備
え、第１偏向部は、第１成形部材と第２成形部材との間
に設けられており、偏向制御部は、第１成形部材を通過
する電子ビームの照射位置を制御してもよい。[0008] A first shaping member for shaping the cross sections of the plurality of electron beams and a second shaping member for shaping the cross sections of the plurality of electron beams passing through the first shaping member into a desired shape are further provided. The unit may be provided between the first forming member and the second forming member, and the deflection control unit may control an irradiation position of the electron beam passing through the first forming member.
【０００９】第１成形部材は、複数の電子ビームの断面
を成形する複数の開口部を有し、電流量取得部は、電流
量及び複数の開口部の大きさに基づいて、第１成形部材
を通過する電子ビームの電流量を取得し、補正値算出部
は、第１成形部材を通過する電子ビームの電流量に基づ
いて、補正値を算出し、偏向制御部は、補正値に基づい
て、第１成形部材を通過する電子ビームの照射位置を制
御してもよい。The first shaping member has a plurality of openings for shaping the cross sections of the plurality of electron beams, and the current amount obtaining section determines the first shaping member based on the amount of current and the size of the plurality of openings. The correction value calculation unit calculates the correction value based on the current amount of the electron beam passing through the first forming member, and the deflection control unit calculates the correction value based on the correction value based on the current amount of the electron beam passing through the first forming member. The irradiation position of the electron beam passing through the first forming member may be controlled.
【００１０】第２成形部材とウェハとの間に設けられ、
複数の電子ビームを独立に偏向する第２偏向部をさらに
備え、第２成形部材は、複数の電子ビームの断面をそれ
ぞれ所定の面積を有する形状に成形し、電流量取得部
は、電流量及び所定の面積に基づいて、第２成形部材を
通過する電子ビームの電流量を取得し、補正値算出部
は、第２成形部材を通過する電子ビームの電流量に基づ
いて、補正値を算出し、偏向制御部は、補正値に基づい
て、第２成形部材を通過する電子ビームの照射位置を制
御してもよい。A second molding member provided between the second molding member and the wafer;
The apparatus further includes a second deflecting unit that independently deflects the plurality of electron beams, wherein the second shaping member shapes the cross sections of the plurality of electron beams into shapes each having a predetermined area. Based on the predetermined area, the amount of current of the electron beam passing through the second forming member is obtained, and the correction value calculation unit calculates the correction value based on the amount of current of the electron beam passing through the second forming member. The deflection control unit may control the irradiation position of the electron beam passing through the second molding member based on the correction value.
【００１１】本発明の第２の形態によると、複数の電子
ビームによりウェハにパターンを露光する電子ビーム露
光方法であって、複数の電子ビームを発生する電子ビー
ム発生段階と、複数の電子ビームのそれぞれの電流量を
取得する電流量取得段階と、電流量に基づいて、複数の
電子ビームの照射位置のずれを補正する補正値を算出す
る補正値算出段階と、補正値に基づいて、複数の電子ビ
ームを独立に偏向して露光する露光段階とを備える。According to a second aspect of the present invention, there is provided an electron beam exposure method for exposing a pattern on a wafer with a plurality of electron beams, comprising: an electron beam generating step of generating a plurality of electron beams; A current value obtaining step of obtaining each current value, a correction value calculating step of calculating a correction value for correcting a shift of the irradiation position of the plurality of electron beams based on the current value, and a plurality of correction values based on the correction values. An exposure step of independently deflecting and exposing the electron beam.
【００１２】本発明の第３の形態によると、複数の電子
ビームによりウェハにパターンを露光して半導体素子を
製造する半導体素子製造方法であって、複数の電子ビー
ムを発生する電子ビーム発生段階と、複数の電子ビーム
のそれぞれの電流量を取得する電流量取得段階と、電流
量に基づいて、複数の電子ビームの照射位置を補正する
補正値を算出する補正値算出段階と、補正値に基づい
て、複数の電子ビームを独立に偏向して露光する露光段
階とを備える。According to a third aspect of the present invention, there is provided a semiconductor device manufacturing method for manufacturing a semiconductor device by exposing a pattern on a wafer with a plurality of electron beams, comprising the steps of generating an electron beam for generating a plurality of electron beams. A current amount obtaining step of obtaining a current amount of each of the plurality of electron beams, a correction value calculating step of calculating a correction value for correcting an irradiation position of the plurality of electron beams based on the current amount, An exposure step of independently deflecting and exposing a plurality of electron beams.
【００１３】なお上記の発明の概要は、本発明の必要な
特徴の全てを列挙したものではなく、これらの特徴群の
サブコンビネーションも又発明となりうる。The above summary of the present invention does not list all of the necessary features of the present invention, and sub-combinations of these features may also constitute the present invention.
【００１４】[0014]
【発明の実施の形態】以下、発明の実施の形態を通じて
本発明を説明するが、以下の実施形態はクレームにかか
る発明を限定するものではなく、又実施形態の中で説明
されている特徴の組み合わせの全てが発明の解決手段に
必須であるとは限らない。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described through embodiments of the present invention. However, the following embodiments do not limit the claimed invention and have the features described in the embodiments. Not all combinations are essential to the solution of the invention.
【００１５】図１は、本発明の一実施形態に係る電子ビ
ーム露光装置１００の構成を示す。電子ビーム露光装置
１００は、電子ビームによりウェハ４４に所定の露光処
理を施す露光部１５０と、露光部１５０に含まれる各構
成の動作を制御する制御系１４０を備える。FIG. 1 shows the configuration of an electron beam exposure apparatus 100 according to one embodiment of the present invention. The electron beam exposure apparatus 100 includes an exposure unit 150 that performs a predetermined exposure process on the wafer 44 with an electron beam, and a control system 140 that controls the operation of each component included in the exposure unit 150.
【００１６】露光部１５０は、筐体８内部において複数
の電子ビームを発生し、電子ビームの断面形状を所望に
成形する電子ビーム成形手段１１０と、複数の電子ビー
ムをウェハ４４に照射するか否かを、それぞれの電子ビ
ームに対して独立に切替える照射切替手段１１２と、ウ
ェハ４４に転写されるパターンの像の向き及びサイズを
調整するウェハ用投影系１１４を含む電子光学系を備え
る。また、露光部１５０は、パターンを露光すべきウェ
ハ４４を載置するウェハステージ４６と、ウェハステー
ジ４６を駆動するウェハステージ駆動部４８とを含むス
テージ系を備える。さらに、露光部１５０は、ウェハ４
４又はウェハステージ４６に設けられるマーク部に照射
された電子ビームにより、マーク部から放射された２次
電子や反射電子等を検出する電子検出部４０を備える。
電子検出部４０は、検出した反射電子の量に対応した検
出信号を反射電子処理部９４に出力する。The exposure unit 150 generates a plurality of electron beams inside the housing 8 and forms an electron beam forming means 110 for shaping the cross-sectional shape of the electron beam as desired, and determines whether to irradiate the wafer 44 with the plurality of electron beams. And an electron optical system including a wafer projection system 114 for adjusting the direction and size of the image of the pattern transferred to the wafer 44. The exposure unit 150 includes a stage system including a wafer stage 46 on which the wafer 44 on which a pattern is to be exposed is mounted, and a wafer stage driving unit 48 for driving the wafer stage 46. Furthermore, the exposure unit 150
4 or an electron detection unit 40 that detects secondary electrons, reflected electrons, and the like emitted from the mark portion by an electron beam applied to the mark portion provided on the wafer stage 46.
The electron detector 40 outputs a detection signal corresponding to the detected amount of backscattered electrons to the backscattered electron processor 94.
【００１７】電子ビーム成形手段１１０は、複数の電子
ビームを発生させる複数の電子銃１０と、電子ビームを
通過させることにより、照射された電子ビームの断面形
状を成形する複数の開口部を有する第１成形部材１４及
び第２成形部材２２と、複数の電子ビームをそれぞれ独
立に集束し、複数の電子ビームの焦点を調整する第１多
軸電子レンズ１６と、第１成形部材１４を通過した複数
の電子ビームを独立に偏向する第１成形偏向部１８及び
第２成形偏向部２０とを有する。The electron beam shaping means 110 has a plurality of electron guns 10 for generating a plurality of electron beams and a plurality of openings for shaping the cross-sectional shape of the irradiated electron beam by passing the electron beam. A first forming member 14 and a second forming member 22, a first multi-axis electron lens 16 for independently focusing a plurality of electron beams and adjusting a focus of the plurality of electron beams, and a plurality of light beams passing through the first forming member 14; A first shaping / deflecting unit 18 and a second shaping / deflecting unit 20 for independently deflecting the electron beam.
【００１８】照射切替手段１１２は、複数の電子ビーム
を独立に集束し、複数の電子ビームの焦点を調整する第
２多軸電子レンズ２４と、複数の電子ビームをそれぞれ
独立に偏向させることにより、それぞれの電子ビームを
ウェハ４４に照射するか否かを、それぞれの電子ビーム
に対して独立に切替えるブランキング電極アレイ２６
と、電子ビームを通過させる複数の開口部を含み、ブラ
ンキング電極アレイ２６で偏向された電子ビームを遮蔽
する電子ビーム遮蔽部材２８とを有する。他の例におい
てブランキング電極アレイ２６は、ブランキング・アパ
ーチャ・アレイ・デバイスであってもよい。The irradiation switching means 112 independently focuses the plurality of electron beams, adjusts the focal points of the plurality of electron beams, and independently deflects the plurality of electron beams. A blanking electrode array 26 for independently switching whether each electron beam is irradiated on the wafer 44 or not for each electron beam.
And an electron beam shielding member 28 that includes a plurality of openings through which the electron beam passes and shields the electron beam deflected by the blanking electrode array 26. In another example, blanking electrode array 26 may be a blanking aperture array device.
【００１９】ウェハ用投影系１１４は、複数の電子ビー
ムをそれぞれ独立に集束し、電子ビームの照射径を縮小
する第３多軸電子レンズ３４と、複数の電子ビームをそ
れぞれ独立に集束し、複数の電子ビームの焦点を調整す
る第４多軸電子レンズ３６と、複数の電子ビームをウェ
ハ４４の所望の位置に、それぞれの電子ビームに対して
独立に偏向する偏向部３８と、ウェハ４４に対する対物
レンズとして機能し、複数の電子ビームをそれぞれ独立
に集束する第５多軸電子レンズ５２とを有する。The wafer projection system 114 independently focuses the plurality of electron beams and reduces the irradiation diameter of the electron beam, and the third multi-axis electron lens 34 independently focuses the plurality of electron beams. A fourth multi-axis electron lens 36 for adjusting the focus of the electron beam, a deflecting unit 38 for deflecting the plurality of electron beams to desired positions on the wafer 44 independently for each electron beam, and an object for the wafer 44. A fifth multi-axis electron lens 52 that functions as a lens and independently focuses a plurality of electron beams;
【００２０】制御系１４０は、個別制御部１２０及び統
括制御部１３０を備える。個別制御部１２０は、電子ビ
ーム制御部８０と、多軸電子レンズ制御部８２と、成形
偏向制御部８４と、ブランキング電極アレイ制御部８６
と、偏向制御部９２と、反射電子処理部９４と、ウェハ
ステージ制御部９６とを有する。統括制御部１３０は、
複数の電子ビームの電流量を取得する電流量取得部１３
２と、当該電流量に基づいて、複数の電子ビームの照射
位置を補正する補正値を算出する補正値算出部１３６を
有する。また、統括制御部１３０は、例えばワークステ
ーションであって、個別制御部１２０に含まれる各制御
部を統括制御する。The control system 140 includes an individual control unit 120 and an overall control unit 130. The individual control unit 120 includes an electron beam control unit 80, a multi-axis electron lens control unit 82, a shaping deflection control unit 84, and a blanking electrode array control unit 86.
, A deflection control unit 92, a reflected electron processing unit 94, and a wafer stage control unit 96. The overall control unit 130
Current amount acquisition unit 13 for acquiring current amounts of a plurality of electron beams
2, and a correction value calculation unit 136 that calculates a correction value for correcting the irradiation positions of the plurality of electron beams based on the current amount. The general control unit 130 is, for example, a workstation, and performs general control of each control unit included in the individual control unit 120.
【００２１】電子ビーム制御部８０は、電子銃１０を制
御する。多軸電子レンズ制御部８２は、第１多軸電子レ
ンズ１６、第２多軸電子レンズ２４、第３多軸電子レン
ズ３４、第４多軸電子レンズ３６及び第５多軸電子レン
ズ５２に供給する電流を制御する。成形偏向制御部８４
は、第１成形偏向部１８及び第２成形偏向部２０を制御
する。ブランキング電極アレイ制御部８６は、ブランキ
ング電極アレイ２６に含まれる偏向電極に印加する電圧
を制御する。偏向制御部９２は、偏向部３８に含まれる
複数の偏向器が有する偏向電極に印加する電圧を制御す
る。反射電子処理部９４は、電子検出部４０から出力さ
れた検出信号に基づいて反射電子の量を検出し、統括制
御部１３０に通知する。ウェハステージ制御部９６は、
ウェハステージ駆動部４８を制御し、ウェハステージ４
６を所定の位置に移動させる。The electron beam control section 80 controls the electron gun 10. The multi-axis electron lens controller 82 supplies the first multi-axis electron lens 16, the second multi-axis electron lens 24, the third multi-axis electron lens 34, the fourth multi-axis electron lens 36, and the fifth multi-axis electron lens 52. To control the current. Molding deflection controller 84
Controls the first shaping / deflecting unit 18 and the second shaping / deflecting unit 20. The blanking electrode array control unit 86 controls the voltage applied to the deflection electrodes included in the blanking electrode array 26. The deflection control unit 92 controls the voltage applied to the deflection electrodes of the plurality of deflectors included in the deflection unit 38. The backscattered electron processing unit 94 detects the amount of backscattered electrons based on the detection signal output from the electron detection unit 40 and notifies the general control unit 130. The wafer stage control unit 96 includes:
The wafer stage driving unit 48 is controlled, and the wafer stage 4 is controlled.
6 is moved to a predetermined position.
【００２２】本実施形態に係る電子ビーム露光装置１０
０の動作について説明する。まず、電子ビームの照射位
置の補正処理における電子ビーム露光装置１００の動作
について説明する。電流量取得部１３２は、複数の電子
銃１０が発生する複数の電子ビームの電流量を取得す
る。次に、補正値算出部１３６は、電流量取得部１３２
が取得した電流量に基づいて、複数の電子ビームの照射
位置を補正する補正値を算出する。そして、成形偏向制
御部８４は、当該補正値に基づいて、第１成形偏向部１
８及び第２成形偏向部２０を制御する。また、偏向制御
部９２は、当該補正値に基づいて、偏向部３８を制御す
る。The electron beam exposure apparatus 10 according to this embodiment
The operation of 0 will be described. First, the operation of the electron beam exposure apparatus 100 in the correction processing of the irradiation position of the electron beam will be described. The current amount acquisition unit 132 acquires the current amount of a plurality of electron beams generated by the plurality of electron guns 10. Next, the correction value calculation unit 136 outputs the current amount acquisition unit 132
Calculates a correction value for correcting the irradiation positions of a plurality of electron beams based on the amount of current acquired by. Then, based on the correction value, the shaping deflection control unit 84 sets the first shaping deflection unit 1
8 and the second shaping deflection unit 20 are controlled. The deflection control unit 92 controls the deflection unit 38 based on the correction value.
【００２３】以下、露光処理における電子ビーム露光装
置１００の動作について説明するが、電子ビーム露光装
置１００は、露光処理に並行して上述の補正処理を常に
行い、複数の電子ビームの電流量に基づいて複数の電子
ビームの照射位置を補正する補正値を算出し、当該補正
値を用いてウェハ４４に露光処理を行うことが好まし
い。Hereinafter, the operation of the electron beam exposure apparatus 100 in the exposure processing will be described. The electron beam exposure apparatus 100 always performs the above-described correction processing in parallel with the exposure processing, and based on the current amounts of a plurality of electron beams. It is preferable to calculate a correction value for correcting the irradiation positions of a plurality of electron beams, and to perform exposure processing on the wafer 44 using the correction value.
【００２４】複数の電子銃１０は、複数の電子ビームを
生成する。第１成形部材１４は、電子銃１０により発生
され、第１成形部材１４に照射された複数の電子ビーム
を、第１成形部材１４に設けられた複数の開口部を通過
させることにより成形する。他の例においては、電子銃
１０において発生した電子ビームを複数の電子ビームに
分割する手段を更に有することにより、複数の電子ビー
ムを生成してもよい。The plurality of electron guns 10 generate a plurality of electron beams. The first forming member 14 is formed by passing a plurality of electron beams generated by the electron gun 10 and applied to the first forming member 14 through a plurality of openings provided in the first forming member 14. In another example, a plurality of electron beams may be generated by further including means for dividing the electron beam generated in the electron gun 10 into a plurality of electron beams.
【００２５】第１多軸電子レンズ１６は、矩形に成形さ
れた複数の電子ビームを独立に集束し、第２成形部材２
２に対する電子ビームの焦点を、電子ビーム毎に独立に
調整する。第１成形偏向部１８は、第１成形部材１４に
おいて矩形形状に成形された複数の電子ビームを、第２
成形部材における所望の位置に照射するように、それぞ
れ独立に偏向する。The first multi-axis electron lens 16 independently focuses a plurality of rectangularly shaped electron beams, and forms the second shaped member 2.
The focus of the electron beam for 2 is adjusted independently for each electron beam. The first shaping / deflecting unit 18 converts the plurality of electron beams shaped into a rectangular shape in the first shaping member 14 into second shaped beams.
The deflection is performed independently so as to irradiate a desired position on the molded member.
【００２６】第２成形偏向部２０は、第１成形偏向部１
８で偏向された複数の電子ビームを、第２成形部材２２
に対して略垂直な方向にそれぞれ偏向し、第２成形部材
２２に照射する。そして矩形形状を有する複数の開口部
を含む第２成形部材２２は、第２成形部材２２に照射さ
れた矩形の断面形状を有する複数の電子ビームを、ウェ
ハ４４に照射すべき所望の断面形状を有する電子ビーム
にさらに成形する。The second shaping / deflecting unit 20 includes the first shaping / deflecting unit 1
The plurality of electron beams deflected at 8 are transmitted to the second forming member 22.
And irradiates the second molding member 22. Then, the second forming member 22 including the plurality of openings having a rectangular shape is configured such that a plurality of electron beams having a rectangular cross-sectional shape applied to the second forming member 22 have a desired cross-sectional shape to be applied to the wafer 44. It is further shaped into an electron beam.
【００２７】第２多軸電子レンズ２４は、複数の電子ビ
ームを独立に集束して、ブランキング電極アレイ２６に
対する電子ビームの焦点を、それぞれ独立に調整する。
そして、第２多軸電子レンズ２４により焦点がそれぞれ
調整された複数の電子ビームは、ブランキング電極アレ
イ２６に含まれる複数のアパーチャを通過する。The second multi-axis electron lens 24 independently focuses the plurality of electron beams, and adjusts the focus of the electron beam on the blanking electrode array 26 independently.
The plurality of electron beams whose focus has been adjusted by the second multi-axis electron lens 24 pass through a plurality of apertures included in the blanking electrode array 26.
【００２８】ブランキング電極アレイ制御部８６は、ブ
ランキング電極アレイ２６における各アパーチャの近傍
に設けられた偏向電極に電圧を印加するか否かを制御す
る。ブランキング電極アレイ２６は、偏向電極に印加さ
れる電圧に基づいて、電子ビームをウェハ４４に照射さ
せるか否かを切替える。The blanking electrode array control unit 86 controls whether or not to apply a voltage to the deflection electrodes provided near each aperture in the blanking electrode array 26. The blanking electrode array 26 switches whether or not to irradiate the wafer 44 with the electron beam based on the voltage applied to the deflection electrode.
【００２９】ブランキング電極アレイに２６により偏向
されない電子ビームは、第３多軸電子レンズ３４を通過
する。そして第３多軸電子レンズ３４は、第３多軸電子
レンズ３４を通過する電子ビームの電子ビーム径を縮小
する。縮小された電子ビームは、電子ビーム遮蔽部材２
８に含まれる開口部を通過する。また、電子ビーム遮蔽
部材２８は、ブランキング電極アレイ２６により偏向さ
れた電子ビームを遮蔽する。電子ビーム遮蔽部材２８を
通過した電子ビームは、第４多軸電子レンズ３６に入射
される。そして第４多軸電子レンズ３６は、入射された
電子ビームをそれぞれ独立に集束し、偏向部３８に対す
る電子ビームの焦点をそれぞれ調整する。第４多軸電子
レンズ３６により焦点が調整された電子ビームは、偏向
部３８に入射される。The electron beam not deflected by the blanking electrode array 26 passes through the third multi-axis electron lens 34. Then, the third multi-axis electron lens 34 reduces the diameter of the electron beam passing through the third multi-axis electron lens 34. The reduced electron beam is supplied to the electron beam shielding member 2.
8 through the opening. Further, the electron beam shielding member 28 shields the electron beam deflected by the blanking electrode array 26. The electron beam that has passed through the electron beam shielding member 28 enters a fourth multi-axis electron lens 36. Then, the fourth multi-axis electron lens 36 independently focuses the incident electron beams, and adjusts the focus of the electron beams with respect to the deflection unit 38, respectively. The electron beam whose focus has been adjusted by the fourth multi-axis electron lens 36 enters the deflection unit 38.
【００３０】偏向制御部９２は、偏向部３８に含まれる
複数の偏向器を制御し、偏向部３８に入射されたそれぞ
れの電子ビームを、ウェハ４４に対して照射すべき位置
にそれぞれ独立に偏向する。第５多軸電子レンズ５２
は、第５多軸電子レンズ５２を通過するそれぞれの電子
ビームのウェハ４４に対する焦点を調整する。そしてウ
ェハ４４に照射すべき断面形状を有するそれぞれの電子
ビームは、ウェハ４４に対して照射すべき所望の位置に
照射される。The deflection control section 92 controls a plurality of deflectors included in the deflection section 38 and independently deflects each electron beam incident on the deflection section 38 to a position to be irradiated on the wafer 44. I do. Fifth multi-axis electron lens 52
Adjusts the focal point of each electron beam passing through the fifth multi-axis electron lens 52 with respect to the wafer 44. Each electron beam having a cross-sectional shape to be irradiated on the wafer 44 is irradiated to a desired position to be irradiated on the wafer 44.
【００３１】露光処理中、ウェハステージ駆動部４８
は、ウェハステージ制御部９６からの指示に基づき、一
定方向にウェハステージ４６を連続移動させるのが好ま
しい。そして、ウェハ４４の移動に合わせて、電子ビー
ムの断面形状をウェハ４４に照射すべき形状に成形し、
ウェハ４４に照射すべき電子ビームを通過させるアパー
チャを定め、さらに偏向部３８によりそれぞれの電子ビ
ームをウェハ４４に対して照射すべき位置に偏向させる
ことにより、ウェハ４４に所望の回路パターンを露光す
ることができる。During the exposure process, the wafer stage driving unit 48
Preferably, the wafer stage 46 is continuously moved in a certain direction based on an instruction from the wafer stage control unit 96. Then, in accordance with the movement of the wafer 44, the cross-sectional shape of the electron beam is formed into a shape to be irradiated on the wafer 44,
An aperture through which an electron beam to be irradiated on the wafer 44 is passed is defined, and each electron beam is deflected to a position to be irradiated on the wafer 44 by the deflecting unit 38, thereby exposing a desired circuit pattern on the wafer 44. be able to.
【００３２】図２は、図１において説明した制御系１４
０の構成の一例を示す。制御系１４０は、統括制御部１
３０及び個別制御部１２０を備える。統括制御部１３０
は、ウェハ４４に対して露光すべき露光パターンを格納
する露光パターン格納部１３１と、露光パターン格納部
１３１に格納された露光パターンに基づいて、各電子ビ
ームが露光すべき領域における露光パターンである露光
データを生成する露光データ生成部１３３と、複数の電
子銃１０が発生する複数の電子ビームのそれぞれの電流
量を電流量取得部１３２と、当該電流量に基づいて、複
数の電子ビームが相互に及ぼす反発力を算出する反発力
算出部１３４と、当該反発力に基づいて複数の電子ビー
ムの照射位置を補正する補正値を算出する補正値算出部
１３６と、当該補正値に基づいて露光データ生成部１３
３が生成した露光データを補正する露光データ補正部１
３５とを有する。個別制御部１２０は、電子銃１０を制
御する電子ビーム制御部８０と、第１成形偏向部１８及
び第２成形偏向部２０を制御する成形偏向制御部８４
と、偏向部３８を制御する偏向制御部９２とを有する。FIG. 2 shows the control system 14 shown in FIG.
0 shows an example of the configuration. The control system 140 is an integrated control unit 1
30 and an individual control unit 120. Overall control unit 130
Is an exposure pattern storage unit 131 for storing an exposure pattern to be exposed on the wafer 44, and an exposure pattern in an area to be exposed by each electron beam based on the exposure pattern stored in the exposure pattern storage unit 131. An exposure data generation unit 133 that generates exposure data, a current amount acquisition unit 132 that obtains a current amount of each of a plurality of electron beams generated by a plurality of electron guns 10, and a plurality of electron beams based on the current amount. , A correction value calculation unit 136 for calculating a correction value for correcting the irradiation positions of a plurality of electron beams based on the repulsion, and exposure data based on the correction value. Generator 13
Exposure data correction unit 1 for correcting the exposure data generated by 3
35. The individual control unit 120 includes an electron beam control unit 80 that controls the electron gun 10 and a shaping deflection control unit 84 that controls the first shaping deflection unit 18 and the second shaping deflection unit 20.
And a deflection control unit 92 for controlling the deflection unit 38.
【００３３】次に、本実施形態における制御系１４０の
動作について説明する。露光データ生成部１３３は、露
光パターン格納部１３１に格納された露光パターンに基
づいて、露光データを生成し、露光データ補正部１３５
に出力する。一方、電流量取得部１３２は、電子ビーム
制御部８０から電子銃１０が発生する電子ビームの電流
量を取得する。また、電流量取得部１３２は、電子銃１
０が発生する電子ビームの電流量と、第１成形部材１４
における電子ビームが通過する開口部の大きさとに基づ
いて、第１成形部材１４を通過する電子ビームの電流量
を取得する。Next, the operation of the control system 140 in this embodiment will be described. The exposure data generation unit 133 generates exposure data based on the exposure pattern stored in the exposure pattern storage unit 131, and generates an exposure data correction unit 135.
Output to On the other hand, the current amount acquisition unit 132 acquires the current amount of the electron beam generated by the electron gun 10 from the electron beam control unit 80. In addition, the current amount acquisition unit 132 is configured to
0 and the amount of electron beam current generated by the first forming member 14.
The amount of current of the electron beam passing through the first forming member 14 is obtained based on the size of the opening through which the electron beam passes in.
【００３４】次に、反発力算出部１３４は、第１成形部
材１４を通過する電子ビームの電流量に基づいて、複数
の電子ビームが相互に及ぼす反発力を算出する。補正値
算出部１３６は、第１成形部材１４を通過する電子ビー
ムの電流量から算出された反発力に基づいて、第１成形
部材１４を通過する電子ビームの照射位置を補正する補
正値を算出する。そして、成形偏向制御部８４は、当該
補正値に基づいて、第１成形部材１４と第２成形部材２
２との間に設けられた第１成形偏向部１８及び第２成形
偏向部２０を制御し、第１成形部材１４を通過する電子
ビームを第２成形部材２２の所望の位置に照射させる。Next, the repulsive force calculator 134 calculates the repulsive force exerted by the plurality of electron beams on the basis of the amount of current of the electron beam passing through the first forming member 14. The correction value calculation unit 136 calculates a correction value for correcting the irradiation position of the electron beam passing through the first forming member 14 based on the repulsive force calculated from the current amount of the electron beam passing through the first forming member 14. I do. Then, based on the correction value, the forming deflection control unit 84 sets the first forming member 14 and the second forming member 2
By controlling the first shaping deflecting unit 18 and the second shaping deflecting unit 20 provided between the second shaping member 22 and the second shaping member 22, a desired position of the second shaping member 22 is irradiated with the electron beam passing through the first shaping member 14.
【００３５】また、電流量取得部１３２は、露光データ
生成部１３３が生成した露光データを受け取り、電子銃
１０が発生する電子ビームの電流量と、第２成形部材２
２が成形する電子ビームの断面の面積とに基づいて、第
２成形部材２２を通過する電子ビームの電流量を取得す
ることが好ましい。このとき、反発力算出部１３４は、
第２成形部材２２を通過する電子ビームの電流量に基づ
いて、複数の電子ビームが相互に及ぼす反発力を算出す
る。また、補正値算出部１３６は、第２成形部材２２を
通過する電子ビームの電流量から算出された反発力に基
づいて、第２成形部材２２を通過する電子ビームの照射
位置を補正する補正値を算出する。そして、偏向制御部
９２は、当該補正値に基づいて、第２成形部材２２とウ
ェハ４４との間に設けられた偏向部３８を制御し、第２
成形部材２２を通過する電子ビームをウェハ４４の所望
の位置に照射させる。また、他の例においては、電子銃
１０で発生した電子ビームの電流量、又は第１成形部材
１８で成形された電子ビームの電流量に基づいて、第２
成形部材２２を通過する電子ビームの照射位置を補正し
てもよい。The current amount acquisition unit 132 receives the exposure data generated by the exposure data generation unit 133, and determines the current amount of the electron beam generated by the electron gun 10 and the second molding member 2.
It is preferable to obtain the current amount of the electron beam passing through the second forming member 22 based on the area of the cross section of the electron beam formed by the second member 2. At this time, the repulsive force calculating unit 134
Based on the amount of current of the electron beam passing through the second forming member 22, the repulsive force exerted by the plurality of electron beams on each other is calculated. The correction value calculator 136 corrects the irradiation position of the electron beam passing through the second forming member 22 based on the repulsive force calculated from the current amount of the electron beam passing through the second forming member 22. Is calculated. The deflection control unit 92 controls the deflection unit 38 provided between the second forming member 22 and the wafer 44 based on the correction value, and
A desired position on the wafer 44 is irradiated with an electron beam passing through the forming member 22. In another example, based on the current amount of the electron beam generated by the electron gun 10 or the current amount of the electron beam formed by the first forming member 18, the second
The irradiation position of the electron beam passing through the molding member 22 may be corrected.
【００３６】本実施形態の電子ビーム露光装置１００に
よれば、複数の電子ビームがクーロン力により相互に及
ぼす反発力に基づいて、電子ビームの照射位置を補正す
る補正値を算出することにより、電子ビームを所望の位
置に照射させることができる。具体的には、第１成形部
材１４を通過する電子ビームの電流量に基づいて、電子
ビームの第２成形部材２２に対する照射位置を補正する
補正値を算出し、当該補正値を用いて第１成形偏向部１
８及び第２成形偏向部２０を制御することにより、電子
ビームを第２成形部材２２の所望の位置に精度よく照射
させることができる。また、第２成形部材２２を通過す
る電子ビームの電流量に基づいて、電子ビームのウェハ
４４に対する照射位置を補正する補正値を算出し、当該
補正値を用いて偏向部３８を制御することにより、電子
ビームをウェハ４４の所望の位置に精度よく照射させる
ことができるため、ウェハ４４にパターンを精度よく露
光することができる。According to the electron beam exposure apparatus 100 of this embodiment, the correction value for correcting the irradiation position of the electron beam is calculated based on the repulsive force exerted by the plurality of electron beams on each other due to the Coulomb force. The beam can be applied to a desired position. Specifically, a correction value for correcting the irradiation position of the electron beam on the second forming member 22 is calculated based on the amount of current of the electron beam passing through the first forming member 14, and the first correction value is calculated using the correction value. Molding deflection unit 1
By controlling the 8 and the second shaping / deflecting section 20, it is possible to irradiate a desired position of the second shaping member 22 with an electron beam with high accuracy. Further, a correction value for correcting the irradiation position of the electron beam on the wafer 44 is calculated based on the current amount of the electron beam passing through the second forming member 22, and the deflection unit 38 is controlled using the correction value. Since a desired position on the wafer 44 can be accurately irradiated with the electron beam, the wafer 44 can be accurately exposed to a pattern.
【００３７】図３は、ウェハから半導体素子を製造す
る、本発明に係る半導体素子製造工程のフローチャート
である。Ｓ１０で、本フローチャートが開始する。Ｓ１
２で、ウェハの上面に、フォトレジストを塗布する。そ
れから、フォトレジストが塗布されたウェハ４４が、電
子ビーム露光装置１００におけるウェハステージ４６に
載置される。ウェハ４４は、図１に関連して説明したよ
うに、第１多軸電子レンズ１６、第２多軸電子レンズ２
４、第３多軸電子レンズ３４、及び第４多軸電子レンズ
３６により複数の電子ビームの焦点調整を独立に行う焦
点調整工程と、ブランキング電極アレイ２６により、ウ
ェハ４４に、複数の電子ビームを照射するか否かを、電
子ビーム毎に独立に切替える照射切替工程により、電子
ビームをウェハ４４に対して照射することにより、パタ
ーン像が露光され、転写される。FIG. 3 is a flowchart of a semiconductor device manufacturing process according to the present invention for manufacturing semiconductor devices from a wafer. In S10, the flowchart starts. S1
At 2, a photoresist is applied to the upper surface of the wafer. Then, the wafer 44 coated with the photoresist is placed on the wafer stage 46 in the electron beam exposure apparatus 100. The wafer 44 includes the first multi-axis electron lens 16 and the second multi-axis electron lens 2 as described with reference to FIG.
A focus adjustment step of independently adjusting the focus of a plurality of electron beams by the fourth, third multi-axis electron lens 34 and the fourth multi-axis electron lens 36; and a plurality of electron beams on the wafer 44 by the blanking electrode array 26. The pattern image is exposed and transferred by irradiating the wafer 44 with an electron beam in an irradiation switching step of independently switching whether or not to irradiate each electron beam.
【００３８】それから、Ｓ１４で露光されたウェハ４４
は、現像液に浸され、現像され、余分なレジストが除去
される（Ｓ１６）。ついで、Ｓ１８で、ウェハ上のフォ
トレジストが除去された領域に存在するシリコン基板、
絶縁膜あるいは導電膜が、プラズマを用いた異方性エッ
チングによりエッチングされる。またＳ２０で、トラン
ジスタやダイオードなどの半導体素子を形成するため
に、ウェハに、ホウ素や砒素などの不純物を注入する。
またＳ２２で、熱処理を施し、注入された不純物の活性
化を行う。またＳ２４で、ウェハ上の有機汚染物や金属
汚染物を取り除くために、薬液によりウェハを洗浄す
る。また、Ｓ２６で、導電膜や絶縁膜の成膜を行い、配
線層及び配線間の絶縁層を形成する。Ｓ１２〜Ｓ２６の
工程を組み合わせ、繰り返し行うことによって、ウェハ
に素子分離領域、素子領域及び配線層を有する半導体素
子を製造することが可能となる。Ｓ２８で、所要の回路
が形成されたウェハを切り出し、チップの組み立てを行
う。Ｓ３０で半導体素子製造フローが終了する。Then, the wafer 44 exposed in S14
Is immersed in a developer and developed to remove excess resist (S16). Next, in S18, a silicon substrate existing in a region where the photoresist on the wafer has been removed,
The insulating film or the conductive film is etched by anisotropic etching using plasma. In step S20, impurities such as boron and arsenic are implanted into the wafer to form semiconductor elements such as transistors and diodes.
In S22, heat treatment is performed to activate the implanted impurities. In step S24, the wafer is washed with a chemical to remove organic contaminants and metal contaminants on the wafer. In step S26, a conductive film or an insulating film is formed to form a wiring layer and an insulating layer between the wirings. By combining and repeating the steps of S12 to S26, it becomes possible to manufacture a semiconductor element having an element isolation region, an element region, and a wiring layer on a wafer. In S28, a wafer on which a required circuit is formed is cut out, and a chip is assembled. In S30, the semiconductor device manufacturing flow ends.
【００３９】以上、本発明を実施の形態を用いて説明し
たが、本発明の技術的範囲は上記実施の形態に記載の範
囲には限定されない。上記実施の形態に、多様な変更又
は改良を加えることができる。その様な変更又は改良を
加えた形態も本発明の技術的範囲に含まれ得ることが、
特許請求の範囲の記載から明らかである。Although the present invention has been described with reference to the embodiment, the technical scope of the present invention is not limited to the scope described in the above embodiment. Various changes or improvements can be added to the above embodiment. It should be noted that such modified or improved embodiments may be included in the technical scope of the present invention.
It is clear from the description of the claims.
【００４０】[0040]
【発明の効果】上記説明から明らかなように、本発明に
よれば、複数の電子ビームをウェハに精度よく照射させ
る電子ビーム露光装置を提供することができる。As is apparent from the above description, according to the present invention, it is possible to provide an electron beam exposure apparatus for irradiating a plurality of electron beams to a wafer with high accuracy.
【図１】本発明の一実施形態に係る電子ビーム露光装置
１００の構成を示す図である。FIG. 1 is a diagram showing a configuration of an electron beam exposure apparatus 100 according to one embodiment of the present invention.
【図２】電子ビーム露光装置１００における制御系１４
０の構成の一例を示す図である。FIG. 2 is a control system 14 in the electron beam exposure apparatus 100.
FIG. 4 is a diagram illustrating an example of a configuration of a zero.
【図３】本発明に係る半導体素子製造工程のフローチャ
ートである。FIG. 3 is a flowchart of a semiconductor device manufacturing process according to the present invention.
８・・筐体、１０・・電子銃、１４・・第１成形部材、
１６・・第１多軸電子レンズ、１８・・第１成形偏向
部、２０・・第２成形偏向部、２２・・第２成形部材、
２４・・第２多軸電子レンズ、２６・・ブランキング電
極アレイ、２８・・電子ビーム遮蔽部材、３４・・第３
多軸電子レンズ、３６・・第４多軸電子レンズ、３８・
・偏向部、４０・・電子検出部、４４・・ウェハ、４６
・・ウェハステージ、４８・・ウェハステージ駆動部、
５２・・第５多軸電子レンズ、８０・・電子ビーム制御
部、８２・・多軸電子レンズ制御部、８４・・成形偏向
制御部、８６・・ブランキング電極アレイ制御部、９２
・・偏向制御部、９４・・反射電子処理部、９６・・ウ
ェハステージ制御部、１００・・電子ビーム露光装置、
１１０・・電子ビーム成形手段、１１２・・照射切替手
段、１１４・・ウェハ用投影系、１２０・・個別制御
系、１３０・・統括制御部、１３１・・露光パターン格
納部、１３２・・電流量取得部、１３３・・露光データ
生成部、１３４・・反発力算出部、１３５・・露光デー
タ補正部、１３６・・補正値算出部、１４０・・制御
系、１５０・・露光部8, casing, electron gun, 14, first molded member,
16 first multi-axis electron lens, 18 first molding deflection section, 20 second molding deflection section, 22 second molding member,
24 second multi-axis electron lens, 26 blanking electrode array, 28 electron beam shielding member, 34 third
Multi-axis electronic lens, 36 .. Fourth multi-axis electron lens, 38.
.Deflection unit, 40 .. electron detection unit, 44 .. wafer, 46.
..Wafer stage, 48..Wafer stage driver,
52 5th multi-axis electron lens, 80 electron beam control unit, 82 multi-axis electron lens control unit, 84 molding deflection control unit, 86 blanking electrode array control unit, 92
..Deflection control section, 94..reflection electron processing section, 96..wafer stage control section, 100..electron beam exposure apparatus,
110: electron beam shaping means, 112: irradiation switching means, 114: wafer projection system, 120: individual control system, 130: general control unit, 131: exposure pattern storage unit, 132: current amount Acquisition unit, 133 exposure data generation unit, 134 repulsive force calculation unit, 135 exposure data correction unit, 136 correction value calculation unit, 140 control system, 150 exposure unit
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｊ 37/305 Ｈ０１Ｌ 21/30 ５４１Ｗ ５４１Ｄ ５４１Ｎ (72)発明者 濱口 新一 東京都練馬区旭町１丁目32番１号株式会社 アドバンテスト内 Ｆターム(参考） 2H097 AA03 AA20 BA10 BB10 CA16 EA01 LA10 5C030 AA01 AB03 5C033 GG03 5C034 BB01 BB04 5F056 AA33 BA01 BA05 BA09 BB01──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01J 37/305 H01L 21/30 541W 541D 541N (72) Inventor Shinichi Hamaguchi 1-chome Asahimachi, Nerima-ku, Tokyo No. 32 No. 1 Advantest F-term (reference) 2H097 AA03 AA20 BA10 BB10 CA16 EA01 LA10 5C030 AA01 AB03 5C033 GG03 5C034 BB01 BB04 5F056 AA33 BA01 BA05 BA09 BB01
Claims (8)
する電子ビーム露光装置であって、 前記複数の電子ビームを発生する電子ビーム発生部と、 前記複数の電子ビームを独立に偏向する第１偏向部と、 前記複数の電子ビームのそれぞれの電流量を取得する電
流量取得部と、 前記電流量に基づいて、前記複数の電子ビームの照射位
置を補正する補正値を算出する補正値算出部と、 前記補正値に基づいて、前記偏向部を制御する偏向制御
部とを備えることを特徴とする電子ビーム露光装置。1. An electron beam exposure apparatus for exposing a wafer with a plurality of electron beams, comprising: an electron beam generating unit that generates the plurality of electron beams; and a first deflection unit that independently deflects the plurality of electron beams. A current amount obtaining unit that obtains the current amount of each of the plurality of electron beams; and a correction value calculation unit that calculates a correction value that corrects the irradiation position of the plurality of electron beams based on the amount of current. An electron beam exposure apparatus, comprising: a deflection control unit that controls the deflection unit based on the correction value.
ビームが相互に及ぼす反発力を算出する反発する反発力
算出部をさらに備え、 前記補正値算出部は、前記反発力に基づいて、前記補正
値を算出することを特徴とする請求項１に記載の電子ビ
ーム露光装置。2. The apparatus according to claim 2, further comprising: a repulsive force calculating unit configured to calculate a repulsive force exerted by the plurality of electron beams on the basis of the amount of current, wherein the correction value calculating unit includes: The electron beam exposure apparatus according to claim 1, wherein the correction value is calculated.
状に成形する成形部材をさらに備え、 前記第１偏向部は、前記成形部材と前記ウェハとの間に
設けられており、 前記成形部材は、前記複数の電子ビームの断面をそれぞ
れ所定の面積を有する形状に成形し、 前記電流量取得部は、前記電流量及び前記所定の面積に
基づいて、前記成形部材を通過する電子ビームの電流量
を取得し、 前記補正値算出部は、前記成形部材を通過する前記電子
ビームの前記電流量に基づいて、前記補正値を算出し、 前記偏向制御部は、前記補正値に基づいて、前記成形部
材を通過する前記電子ビームの照射位置を制御すること
を特徴とする請求項１に記載の電子ビーム露光装置。3. A shaping member for shaping a cross section of the plurality of electron beams into a desired shape, wherein the first deflecting portion is provided between the shaping member and the wafer; Shape the cross section of each of the plurality of electron beams into a shape having a predetermined area, and the current amount obtaining unit determines a current of the electron beam passing through the forming member based on the current amount and the predetermined area. The correction value calculation unit calculates the correction value based on the current amount of the electron beam passing through the forming member, and the deflection control unit calculates the correction value based on the correction value. The electron beam exposure apparatus according to claim 1, wherein an irradiation position of the electron beam passing through a forming member is controlled.
第１成形部材と、 前記第１成形部材を通過した前記複数の電子ビームの断
面を所望の形状に成形する第２成形部材とをさらに備
え、 前記第１偏向部は、前記第１成形部材と前記第２成形部
材との間に設けられており、 前記偏向制御部は、前記第１成形部材を通過する電子ビ
ームの照射位置を制御することを特徴とする請求項１に
記載の電子ビーム露光装置。4. A first shaping member for shaping a cross section of the plurality of electron beams, and a second shaping member for shaping a cross section of the plurality of electron beams passing through the first shaping member into a desired shape. The first deflection unit is provided between the first molding member and the second molding member, and the deflection control unit controls an irradiation position of an electron beam passing through the first molding member. The electron beam exposure apparatus according to claim 1, wherein:
ームの断面を成形する複数の開口部を有し、 前記電流量取得部は、前記電流量及び前記複数の開口部
の大きさに基づいて、前記第１成形部材を通過する電子
ビームの電流量を取得し、 前記補正値算出部は、前記第１成形部材を通過する前記
電子ビームの前記電流量に基づいて、前記補正値を算出
し、 前記偏向制御部は、前記補正値に基づいて、前記第１成
形部材を通過する前記電子ビームの照射位置を制御する
ことを特徴とする請求項４に記載の電子ビーム露光装
置。5. The first shaping member has a plurality of openings for shaping the cross-sections of the plurality of electron beams, and the current amount acquiring unit adjusts the current amount and the size of the plurality of openings. Based on the current amount of the electron beam passing through the first forming member, the correction value calculation unit calculates the correction value based on the current amount of the electron beam passing through the first forming member. 5. The electron beam exposure apparatus according to claim 4, wherein the deflection control unit calculates and controls an irradiation position of the electron beam passing through the first forming member based on the correction value.
設けられ、前記複数の電子ビームを独立に偏向する第２
偏向部をさらに備え、 前記第２成形部材は、前記複数の電子ビームの断面をそ
れぞれ所定の面積を有する形状に成形し、 前記電流量取得部は、前記電流量及び前記所定の面積に
基づいて、前記第２成形部材を通過する電子ビームの電
流量を取得し、 前記補正値算出部は、前記第２成形部材を通過する前記
電子ビームの前記電流量に基づいて、前記補正値を算出
し、 前記偏向制御部は、前記補正値に基づいて、前記第２成
形部材を通過する前記電子ビームの照射位置を制御する
ことを特徴とする請求項４に記載の電子ビーム露光装
置。6. A second member provided between the second forming member and the wafer and independently deflecting the plurality of electron beams.
A deflection unit, wherein the second shaping member shapes a cross section of each of the plurality of electron beams into a shape having a predetermined area, and the current amount obtaining unit is configured to determine a current amount and the predetermined area based on the current amount. Acquiring the amount of current of the electron beam passing through the second forming member, wherein the correction value calculation unit calculates the correction value based on the amount of current of the electron beam passing through the second forming member. The electron beam exposure apparatus according to claim 4, wherein the deflection control unit controls an irradiation position of the electron beam passing through the second molding member based on the correction value.
ンを露光する電子ビーム露光方法であって、 前記複数の電子ビームを発生する電子ビーム発生段階
と、 前記複数の電子ビームのそれぞれの電流量を取得する電
流量取得段階と、 前記電流量に基づいて、前記複数の電子ビームの照射位
置のずれを補正する補正値を算出する補正値算出段階
と、 前記補正値に基づいて、前記複数の電子ビームを独立に
偏向して露光する露光段階とを備えることを特徴とする
電子ビーム露光方法。7. An electron beam exposure method for exposing a pattern on a wafer with a plurality of electron beams, comprising: an electron beam generating step of generating the plurality of electron beams; and obtaining a current amount of each of the plurality of electron beams. A current value obtaining step; a correction value calculating step of calculating a correction value for correcting a shift of the irradiation position of the plurality of electron beams based on the current amount; and the plurality of electron beams based on the correction value. And an exposure step of independently deflecting light for exposure.
ンを露光して半導体素子を製造する半導体素子製造方法
であって、 前記複数の電子ビームを発生する電子ビーム発生段階
と、 前記複数の電子ビームのそれぞれの電流量を取得する電
流量取得段階と、 前記電流量に基づいて、前記複数の電子ビームの照射位
置を補正する補正値を算出する補正値算出段階と、 前記補正値に基づいて、前記複数の電子ビームを独立に
偏向して露光する露光段階とを備えることを特徴とする
半導体素子製造方法。8. A semiconductor device manufacturing method for manufacturing a semiconductor device by exposing a pattern on a wafer with a plurality of electron beams, comprising: an electron beam generating step of generating the plurality of electron beams; A current value obtaining step of obtaining each current value, a correction value calculating step of calculating a correction value for correcting the irradiation position of the plurality of electron beams based on the current value, and, based on the correction value, An exposure step of independently deflecting and exposing a plurality of electron beams.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000351055A JP2002158156A (en) | 2000-11-17 | 2000-11-17 | Electron beam exposure system, electron beam exposing method, and method for fabricating semiconductor element |
| PCT/JP2001/009812 WO2002041372A1 (en) | 2000-11-17 | 2001-11-09 | Electron beam exposure system, electron beam exposure method, and production method for semiconductor element |
| TW090128180A TWI230838B (en) | 2000-11-17 | 2001-11-14 | Electron beam exposure device and method and manufacturing method of semiconductor elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000351055A JP2002158156A (en) | 2000-11-17 | 2000-11-17 | Electron beam exposure system, electron beam exposing method, and method for fabricating semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002158156A true JP2002158156A (en) | 2002-05-31 |
Family
ID=18824174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000351055A Withdrawn JP2002158156A (en) | 2000-11-17 | 2000-11-17 | Electron beam exposure system, electron beam exposing method, and method for fabricating semiconductor element |
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| Country | Link |
|---|---|
| JP (1) | JP2002158156A (en) |
| TW (1) | TWI230838B (en) |
| WO (1) | WO2002041372A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017159693A1 (en) * | 2016-03-14 | 2017-09-21 | 株式会社ニコン | Exposure device, exposure method, lithography method and device manufacturing method |
| WO2018167936A1 (en) * | 2017-03-17 | 2018-09-20 | 株式会社ニコン | Exposure device, lithographic method, and device manufacturing method |
| WO2018167922A1 (en) * | 2017-03-16 | 2018-09-20 | 株式会社ニコン | Charged particle beam optical apparatus, exposure apparatus, exposure method, control apparatus, control method, information generation apparatus, information generation method, and device manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101414127A (en) | 2002-10-30 | 2009-04-22 | 迈普尔平版印刷Ip有限公司 | Electron beam exposure system |
| JP4520426B2 (en) | 2005-07-04 | 2010-08-04 | 株式会社ニューフレアテクノロジー | Electron beam drift correction method and electron beam writing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5384463A (en) * | 1991-06-10 | 1995-01-24 | Fujisu Limited | Pattern inspection apparatus and electron beam apparatus |
| DE69223088T2 (en) * | 1991-06-10 | 1998-03-05 | Fujitsu Ltd | Pattern checking apparatus and electron beam device |
| JP3298347B2 (en) * | 1995-01-11 | 2002-07-02 | 株式会社日立製作所 | Electron beam drawing equipment |
| US6107636A (en) * | 1997-02-07 | 2000-08-22 | Canon Kabushiki Kaisha | Electron beam exposure apparatus and its control method |
| JP3976835B2 (en) * | 1997-05-08 | 2007-09-19 | キヤノン株式会社 | Electron beam exposure method and electron beam exposure apparatus |
| JPH11233418A (en) * | 1998-02-18 | 1999-08-27 | Jeol Ltd | Electron beam lithography device |
-
2000
- 2000-11-17 JP JP2000351055A patent/JP2002158156A/en not_active Withdrawn
-
2001
- 2001-11-09 WO PCT/JP2001/009812 patent/WO2002041372A1/en active Search and Examination
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017159693A1 (en) * | 2016-03-14 | 2017-09-21 | 株式会社ニコン | Exposure device, exposure method, lithography method and device manufacturing method |
| JPWO2017159693A1 (en) * | 2016-03-14 | 2019-01-10 | 株式会社ニコン | Exposure apparatus, exposure method, lithography method, and device manufacturing method |
| WO2018167922A1 (en) * | 2017-03-16 | 2018-09-20 | 株式会社ニコン | Charged particle beam optical apparatus, exposure apparatus, exposure method, control apparatus, control method, information generation apparatus, information generation method, and device manufacturing method |
| US10984982B2 (en) | 2017-03-16 | 2021-04-20 | Nikon Corporation | Charged particle beam optical apparatus, exposure apparatus, exposure method, control apparatus, control method, information generation apparatus, information generation method and device manufacturing method |
| US11387074B2 (en) | 2017-03-16 | 2022-07-12 | Nikon Corporation | Charged particle beam optical apparatus, exposure apparatus, exposure method, control apparatus, control method, information generation apparatus, information generation method and device manufacturing method |
| WO2018167936A1 (en) * | 2017-03-17 | 2018-09-20 | 株式会社ニコン | Exposure device, lithographic method, and device manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI230838B (en) | 2005-04-11 |
| WO2002041372A1 (en) | 2002-05-23 |
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