TW594355B - Liquid crystal display device having improved TFTs and a fabrication method thereof - Google Patents

Liquid crystal display device having improved TFTs and a fabrication method thereof Download PDF

Info

Publication number: TW594355B
Authority: TW; Taiwan
Prior art keywords: polycrystalline silicon; silicon semiconductor; semiconductor layer; film; substrate
Prior art date: 1999-11-19

Application number

TW089124193A

Other languages

English (en)

Chinese (zh)

Inventor

Toshio Miyazawa

Akio Mimura

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1999-11-19

Filing date

2000-11-15

Publication date

2004-06-21

2000-11-15 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

2004-06-21 Application granted granted Critical

2004-06-21 Publication of TW594355B publication Critical patent/TW594355B/zh

Links

239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 83
238000000034 method Methods 0.000 title claims description 29
238000004519 manufacturing process Methods 0.000 title claims description 24
239000004065 semiconductor Substances 0.000 claims abstract description 411
229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 406
239000010408 film Substances 0.000 claims abstract description 342
239000000758 substrate Substances 0.000 claims abstract description 172
239000010409 thin film Substances 0.000 claims abstract description 127
239000012535 impurity Substances 0.000 claims description 79
229910021417 amorphous silicon Inorganic materials 0.000 claims description 46
238000011049 filling Methods 0.000 claims description 43
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XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
229910021419 crystalline silicon Inorganic materials 0.000 claims description 6
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QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
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229910052698 phosphorus Inorganic materials 0.000 description 14
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ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 11
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VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
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LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 3
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
101100222207 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) TIS11 gene Proteins 0.000 description 2
238000010521 absorption reaction Methods 0.000 description 2
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VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
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OSDXSOSJRPQCHJ-XVNBXDOJSA-N methyl 3-(3,4-dihydroxyphenyl)-3-[(E)-3-(3,4-dihydroxyphenyl)prop-2-enoyl]oxypropanoate Chemical compound C=1C=C(O)C(O)=CC=1C(CC(=O)OC)OC(=O)\C=C\C1=CC=C(O)C(O)=C1 OSDXSOSJRPQCHJ-XVNBXDOJSA-N 0.000 description 1
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Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78636—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with supplementary region or layer for improving the flatness of the device
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Physics & Mathematics (AREA)
Power Engineering (AREA)
General Physics & Mathematics (AREA)
Ceramic Engineering (AREA)
Computer Hardware Design (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Nonlinear Science (AREA)
Chemical & Material Sciences (AREA)
Crystallography & Structural Chemistry (AREA)
Optics & Photonics (AREA)
Mathematical Physics (AREA)
Manufacturing & Machinery (AREA)
Liquid Crystal (AREA)
Thin Film Transistor (AREA)
Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Recrystallisation Techniques (AREA)

TW089124193A 1999-11-19 2000-11-15 Liquid crystal display device having improved TFTs and a fabrication method thereof TW594355B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP32972599A JP2001147446A (ja)	1999-11-19	1999-11-19	液晶表示装置とその製造方法

Publications (1)

Publication Number	Publication Date
TW594355B true TW594355B (en)	2004-06-21

Family

ID=18224587

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW089124193A TW594355B (en)	1999-11-19	2000-11-15	Liquid crystal display device having improved TFTs and a fabrication method thereof

Country Status (5)

Country	Link
US (2)	US6636280B1 (fr)
EP (1)	EP1102111B1 (fr)
JP (1)	JP2001147446A (fr)
KR (1)	KR100336684B1 (fr)
TW (1)	TW594355B (fr)

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TWI588578B (zh) *	2010-07-01	2017-06-21	半導體能源研究所股份有限公司	液晶顯示裝置的驅動方法
CN113608385A (zh) *	2006-05-16	2021-11-05	株式会社半导体能源研究所	液晶显示装置及半导体装置

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JP3608614B2 (ja) *	2001-03-28	2005-01-12	株式会社日立製作所	表示装置
JP4939699B2 (ja) *	2001-05-31	2012-05-30	株式会社半導体エネルギー研究所	半導体装置の作製方法
US7749818B2 (en) *	2002-01-28	2010-07-06	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method of manufacturing the same
TWI261358B (en) *	2002-01-28	2006-09-01	Semiconductor Energy Lab	Semiconductor device and method of manufacturing the same
TWI272666B (en) *	2002-01-28	2007-02-01	Semiconductor Energy Lab	Semiconductor device and method of manufacturing the same
CN101217150B (zh) *	2002-03-05	2011-04-06	株式会社半导体能源研究所	半导体元件和使用半导体元件的半导体装置
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KR100916656B1 (ko)	2002-10-22	2009-09-08	삼성전자주식회사	레이저 조사 장치 및 이를 이용한 다결정 규소 박막트랜지스터의 제조 방법
GB2403595B (en) *	2003-06-25	2005-10-05	Lg Philips Lcd Co Ltd	Liquid crystal display device having polycrystalline silicon thin film transistor and method of fabricating the same
KR100585873B1 (ko) *	2003-11-03	2006-06-07	엘지.필립스 엘시디 주식회사	폴리실리콘 액정표시소자 및 그 제조방법
JP2005228819A (ja) *	2004-02-10	2005-08-25	Mitsubishi Electric Corp	半導体装置
JP4711042B2 (ja) *	2004-03-17	2011-06-29	セイコーエプソン株式会社	半導体膜の製造方法、および半導体装置の製造方法
JP2005276944A (ja) *	2004-03-23	2005-10-06	Sharp Corp	半導体デバイス、その製造方法および製造装置
JP4315074B2 (ja)	2004-07-15	2009-08-19	セイコーエプソン株式会社	半導体装置用基板及びその製造方法、電気光学装置用基板、電気光学装置並びに電子機器
CN100515153C (zh) *	2004-10-12	2009-07-15	乐金显示有限公司	有机电致发光器件及其制造方法
US20080237593A1 (en) *	2005-01-07	2008-10-02	Junichiro Nakayama	Semiconductor Device, Method of Fabricating the Same, and Apparatus for Fabricating the Same
JP2006190897A (ja) *	2005-01-07	2006-07-20	Sharp Corp	半導体デバイス、その製造方法および製造装置
KR100752381B1 (ko) *	2005-12-23	2007-08-27	삼성에스디아이 주식회사	결정화방법 및 이를 이용한 박막 트랜지스터의 제조방법
US8927898B2 (en) *	2006-05-01	2015-01-06	Tcz, Llc	Systems and method for optimization of laser beam spatial intensity profile
US8497494B2 (en) *	2006-11-24	2013-07-30	Lg Display Co., Ltd.	Thin film transistor and array substrate for liquid crystal display device comprising organic insulating material
JP5205012B2 (ja) *	2007-08-29	2013-06-05	株式会社半導体エネルギー研究所	表示装置及び当該表示装置を具備する電子機器
US20120154704A1 (en) *	2009-08-25	2012-06-21	Sharp Kabushiki Kaisha	Photosensor, semiconductor device, and liquid crystal panel
KR102180554B1 (ko) *	2013-12-04	2020-11-19	삼성디스플레이 주식회사	박막 트랜지스터 및 이의 제조 방법
TWI570899B (zh) *	2014-09-10	2017-02-11	群創光電股份有限公司	薄膜電晶體基板
JP6579086B2 (ja) *	2016-11-15	2019-09-25	信越半導体株式会社	デバイス形成方法
KR102596210B1 (ko) *	2018-05-25	2023-10-30	엘지디스플레이 주식회사	Tft 기판 및 이를 포함한 표시장치
KR20220033596A (ko) *	2020-09-08	2022-03-17	삼성디스플레이 주식회사	다결정 실리콘층의 제조 방법, 표시 장치 및 이의 제조 방법

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2000
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- 2000-11-17 EP EP00124340A patent/EP1102111B1/fr not_active Expired - Lifetime
- 2000-11-20 US US09/715,105 patent/US6636280B1/en not_active Expired - Lifetime
2003
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Publication number	Publication date
EP1102111A3 (fr)	2003-10-01
EP1102111A2 (fr)	2001-05-23
JP2001147446A (ja)	2001-05-29
EP1102111B1 (fr)	2012-05-30
KR100336684B1 (ko)	2002-05-13
US7315335B2 (en)	2008-01-01
KR20010051728A (ko)	2001-06-25
US6636280B1 (en)	2003-10-21
US20040038600A1 (en)	2004-02-26

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