TW582057B

TW582057B - A method of improving the non-uniformity of critical dimensions

Info

Publication number: TW582057B
Application number: TW92104725A
Authority: TW
Inventors: Jaw-Jung Shiu; Chih-Ming Ke; Burn-Jeng Lin
Original assignee: Taiwan Semiconductor Mfg
Priority date: 2003-03-05
Filing date: 2003-03-05
Publication date: 2004-04-01
Also published as: TW200418087A

Abstract

A method of improving the non-uniformity of critical dimensions is provided. A dummy feature photoresist group is formed in each side of a feature photoresist group. Using the dummy feature photoresist groups makes the environment around the feature photoresist group be similar, this method is able to reduce the non-uniformity of critical dimensions due to the different environment during the exposure and etching process.

Description

582057 五、發明說明（1) 發明所屬之技術領域亡：：是有關於一種半導體製程的方法，且特別是有關於小線寬不均勻性的改善方法。先前技術 t Γ半導體產業快速與蓬勃的發展，當製程技術演進到深 Γ被f技術時，尤其是到了 90奈米以下時，需要使用極精細的微影與蝕刻技術，方能製造出所需的積體電路。當積體電路的電路密度增加，最小線寬（critical dimensi〇n， CD)也必須愈來愈小’故製程的控制也更行困難。，IC製程中，若使用光阻來圖案化薄膜會有兩個主要的問題·光學近似效應（optical proximity effect, 0ΡΕ)與輪廓祕負載效應（profile microloading effect)。光學近似效應係各個圖案化的特徵（“31；111^)會因為周邊環境不同而導致曝光後的效果有所不同。輪廓微負載效應係由於在蝕刻過程中，隔離特徵（isolated feature)的區域因為缺少由鄰近特徵幫助造成的側壁4刻，使得隔離特徵的最小丸寸會寬於原本光阻所定義的最小尺寸。以上兩個效應都是因為特徵的周邊環境不同而產生，合造成在同-基板上不同區域的特徵’其最小線寬呈現不‘句的狀態^以下舉出兩個習知的隔離特徵與密集特徵（dense feature)的例子來說明特徵的周圍環境對蝕刻製程的影響0 第1 A-1 B圖是隔離特徵的蝕刻過程之不意圖，隔離特徵係指582057 V. Description of the invention (1) The technical field to which the invention belongs: It relates to a method for semiconductor manufacturing, and in particular to a method for improving small line width unevenness. The previous technology t Γ The semiconductor industry has developed rapidly and vigorously. When the process technology evolves to deep Γ technology, especially below 90 nm, the use of extremely fine lithography and etching technology is required to produce the required Integrated circuit. As the circuit density of the integrated circuit increases, the critical line width (critical dimension, CD) must also be smaller and smaller, so the process control becomes more difficult. In the IC process, if photoresist is used to pattern the film, there are two main problems: optical proximity effect (OPE) and profile microloading effect. The optical approximation effect is that each patterned feature ("31; 111 ^) will have different effects after exposure due to different surrounding environments. The contour micro-load effect is due to the area of isolated features during the etching process Because of the lack of 4 sidewalls caused by the help of adjacent features, the minimum size of the isolation feature will be wider than the minimum size defined by the original photoresistor. The above two effects are caused by the different surroundings of the feature. -The status of the feature 'Different minimum line width is not' in different areas on the substrate ^ The following two examples of conventional isolation features and dense features are given to illustrate the impact of the surrounding environment of the feature on the etching process. Figure 1 A-1 B is the intention of the etching process of the isolation feature. The isolation feature refers to

582057 、發明說明（2) 在一特定區域内只存在單一特徵的圖案，該特徵的寬度最小線寬。請參照第1八圖，基板110上具有薄膜層120，特徵光阻131位於薄膜層12〇之上，用以圖形化薄膜層12〇，特徵光阻131的寬度為最小線寬❶將第u圖的結構進行蝕程’會得到第1B圖’特徵薄膜121的最小線寬會大阻131的最小線寬。叮彳又尤第2 A-2B+圖是密集特徵的蝕刻過程之示意圖，密集特徵係指在一特定區域内存在複數個特徵的圖案，該些特徵的寬度皆為最小線寬。請參照第2A圖，基板丨丨〇上具有薄膜層又 120，特徵光阻132、133、134、135與136位於薄膜層12〇之，上，用以圖形化薄膜層12〇，特徵光阻132、l33、、US 與136的寬度皆為最小線寬。將第2八圖的結構進行钱刻製 J，會得到特徵薄m22a、123、124、125與126&，如第2b 圖所示。 f第2B圖巾，特徵薄膜123、124與125的最小線寬則與特徵 ^阻133、134與135的最小線寬相同，但是特徵薄膜122&與 a的最小線寬卻會大於特徵光阻132與136的最小線寬。 ς =徵薄，1 22a與1 26a的最小線寬明顯變大就是輪廓微黑从义應。這疋因為特徵薄膜1 23、1 24與1 25的兩側都各有福勒处:個特徵薄膜，但是特徵薄膜1223與1263的其中一側，同合^ 一個特徵薄膜，此兩組特徵薄膜所處的周邊環境不问曰衫響蝕刻製程的效果。成特^ 1可知’同一晶片i，特徵周邊環境的不同會造特敛的最小線寬不均勻’使得隔離特徵與密集特徵中的 582〇57 五、發明說明（3) 緣特徵之最小線寬變寬，無法達到製程所需。若片曰曰 ^ =最小線寬不均勻，會使得某些線路訊號傳遞較快，而運慢’造成訊號傳輸速率的偏差1易使晶片异寺產生錯蜈，拉且降低晶片運算的效能。發明内容 hi發提供-種最小線寬不均勻性的改造成最小線寬不均勻的情形八私時因為周邊環境不同所 ΐϊΐ發：Ϊ上述目的，提出-種最小線寬不均勻性的改 ‘二後特，L1阻之兩側各加上一組偽特徵光阻需特徵群後，覆蓋上一層光阻層，利的特徵薄膜。而需特徵薄膜、然後進行第疋以光阻以保護所境影響的特徵薄膜。 ^ 即可传到不受周邊環依照本發明一較伟奢％ γ丨々偽特徵光阻。:各組偽特徵光阻群包含至少一 J為所需特徵光阻之線寬的二斤=支光阻之間隔距 =複數個時，4目鄰的偽特徵光阻光阻之數目随之線寬的1至3倍。 < 間^距離為所需特徵光依照本發明一較祛程時，薄膜層之材質二:斤，用的餘刻製程為濕#刻製佳實細例，所應用的餘刻製程為删582057, invention description (2) There is only a single feature pattern in a specific area, and the width of the feature is the smallest line width. Please refer to FIG. 18, the substrate 110 has a thin film layer 120, and a characteristic photoresist 131 is located on the thin film layer 12o to pattern the thin film layer 120. The width of the characteristic photoresist 131 is the minimum line width. Etching of the structure shown in the figure will result in the minimum line width of the feature film 121 in FIG. 1B, which will greatly increase the minimum line width of the resistance 131. Dingyi Youyou Figure 2 A-2B + is a schematic diagram of the etching process of dense features. A dense feature refers to a pattern of a plurality of features in a specific area. The width of these features is the minimum line width. Please refer to FIG. 2A. The substrate has a thin film layer and 120, and the characteristic photoresists 132, 133, 134, 135, and 136 are located on the thin film layer 12o. The widths of 132, l33,, US and 136 are the minimum line widths. If the structure of Fig. 28 is engraved with money J, the characteristic thin m22a, 123, 124, 125, and 126 & will be obtained, as shown in Fig. 2b. f2B, the minimum line width of feature films 123, 124, and 125 is the same as the minimum line width of feature 133, 134, and 135, but the minimum line width of feature films 122 & and a will be greater than the characteristic photoresist The minimum line width of 132 and 136. ς = thin, the minimum line width of 1 22a and 1 26a becomes significantly larger, which means that the outlines are slightly darker. This is because the feature films 1 23, 1 24, and 1 25 have Fowler's sides on each side: a feature film, but one side of the feature films 1223 and 1263, together, a feature film, the two sets of feature films are The surrounding environment does not matter the effect of the etching process. Cheng special ^ 1 can be seen that 'the same wafer i, the difference in the characteristics of the surrounding environment will cause a particularly constrained minimum line width unevenness' makes the isolation feature and dense features 582〇57 V. Description of the invention (3) The minimum line width of the edge feature Widened, unable to meet process requirements. If the chip is ^ = the minimum line width is not uniform, it will make some line signals transmit faster, and the slower operation will cause the deviation of the signal transmission rate.1 It will easily cause chip chip error, and reduce and reduce the efficiency of chip operation. SUMMARY OF THE INVENTION Hifa provides-a case where the smallest line width non-uniformity is transformed into a smallest line width non-uniformity. In Hachijo, it is caused by the difference in the surrounding environment: Ϊ The above purpose, a change in the smallest line width non-uniformity is proposed. After the second special feature, a set of pseudo-feature photoresistors is added on each side of the L1 resistor, and then a photoresist layer is covered, which is a favorable feature film. Instead, a feature film is required, followed by a photoresist to protect the feature film from environmental influences. ^ It can be transmitted without being surrounded by the peripheral ring. According to the present invention, a relatively high luxury% γ 丨々 pseudo-feature photoresistance. : Each group of pseudo-characteristic photoresist groups contains at least one J which is the line width of the required characteristic photoresistance = the distance between branch photoresistors = a plurality of, the number of pseudo-feature photoresistors adjacent to 4 meshes follows 1 to 3 times the line width. < distance is the required characteristic light. According to the first process of the present invention, the material of the film layer is two: catty, and the remaining process used is wet #etching. A good example, the applied remaining process is deleted.

依照本發明另一較佳眚發、氮化矽或金屬。 582057 五、發明說明（4) 製程時，薄膜層化石夕或金屬。本硬遮罩層，硬遮碳或氮化碳。依照本發明之又以用於光罩的製中，製作光罩時鉬。根據本發明之目一光罩係定義第需特徵薄膜以及二光阻層於該所膜。依照本發明一較城薄膜之兩外侧獏。其中偽特徵特徵薄膜之線寬時，相鄰的偽特的1至3倍。本發明可使同一 %境的影響。因致’避免訊號傳提兩晶片運算的論乾餘刻或是濕之材質為介較佳實施例罩層的材質一較佳實施作，以改善所應用的薄的，提出一一光阻層於複數個偽特需特徵薄膜佳實施例， ’各偽特徵薄膜群與所的1至3倍。徵薄膜之間晶片上的特此同一晶片遞速率的偏效能。而且 Μ刻皆可應晶石夕、氧存在一層、非結晶方法亦可 &生。其或矽化合中的第至少~所係定義第特徵薄於所需特特徵薄離為所需為複數個膜之線寬不受周邊速度一錯誤率，廣泛，不線寬的均電材質、多晶石夕、單在薄膜層與光阻之間為氮化石夕、氧氮化石夕例’本發明所應用之在光罩上線寬的不均膜層之材質為鉬、鉻種光罩組合。光罩組薄膜層之上，以形成徵薄膜群，第二光罩之上’以保護該所需偽特徵薄膜群分別位薄膜群包含至少一偽需特徵薄膜之間隔距當偽特徵薄膜之數目隔距離為所需特徵薄韨之最小線寬均勻，上各線路訊號傳遞的差’降低晶片運算的本發明可應用的範圍用本發明來提高最小五發明說明（5) 勻性。實施方式為了 3jg 1 性之問題I : : 2 J環境不同所造成的最小線寬不均勻法。出一種最小線寬不均勻性的改善方本發明係在利用 ^ 之兩側各加上一纟且後所需特徵時，在所需特徵的光阻行第—次蝕刻，此眸^f(dUmmy featUre)光阻群，然後進與偽特徵光阻群兩】膜上會存在所需特徵光阻層光阻層，利 ^疋義的特徵薄膜。而後，覆蓋上一然後進行第二* 疋義保護光阻以保護所需特徵薄膜，需特徵薄膜:Γ仅i。此時被蝕刻的薄膜層上只會存在所之後，再將其上覆蓋的保護光阻去除請參照第3二Λ境影響的特徵薄臈。圖。第3A-3C盥篦1 /i Γ不依照本發明一較佳實施例的示意之示咅：第1A一1B圖相同，皆為隔離特徵的蝕刻過程 w圖。印參照第3A圖，基板11 〇上具有薄徵光阻131位於镇膜恳19n々u ，、有溥膜層120，特徵来阻⑴圖形化薄膜層120，特欲光阻131的寬度為最小線寬。亏 :發明在特：光阻131之兩側分別加上一組偽特徵光阻群 202，各組偽特徵光阻群2〇2包含複數個偽特徵光阻，特徵光阻之線寬與特徵光阻之線寬皆利用光學近似修正… (optical proximity correction，OPC)方法來修正，使偽特徵光阻之線寬與特徵光阻之線寬相同，皆為^小之線第9頁 582057Another preferred hair, silicon nitride or metal according to the present invention. 582057 5. Description of the invention (4) During the manufacturing process, the film layer is fossil or metal. This hard mask layer, hard mask carbon or carbon nitride. According to the present invention, it is used in the manufacture of a photomask, and molybdenum is used in making the photomask. According to the purpose of the present invention, a photomask defines a desired feature film and two photoresist layers on the film. The two outer sides of a comparative film according to the present invention. Where the line width of the pseudo-feature feature film is 1 to 3 times of the adjacent pseudo-feature. The present invention enables the same effect. Because of the 'to avoid signal transmission and the two chip operation theory, dry and wet or wet material is the material of the cover layer of the preferred embodiment. A better implementation is used to improve the thinner application. A photoresistive layer is proposed. In the preferred embodiment of the plurality of pseudo-specific feature films, 'each pseudo-feature film group is 1 to 3 times as much as required. Between the thin films, the bias performance of the same wafer on the wafer is therefore biased. In addition, the engraving of M can be used for crystal spar, there is a layer of oxygen, and the non-crystalline method can also be used. Its or at least in the silicon compound is defined as the first feature thinner than the required special feature thinner than the required. The line width of the multiple films is not affected by the peripheral speed and error rate. It is a wide, non-line-width electrical equalization material, Polycrystalline stone, single between the thin film layer and the photoresist are nitride stone and oxynitride stone. For example, the material of the uneven film layer of the line width on the photomask used in the present invention is made of molybdenum and chromium. . Over the mask group film layer to form a feature film group, and above the second photomask to protect the desired pseudo-feature film group. The film group includes at least one pseudo-feature film with an interval as the number of pseudo-feature films. The separation distance is the minimum line width of the required feature thin and uniform, and the difference in signal transmission on each line 'reduces the applicable range of the present invention. The present invention is used to improve the minimum. Implementation method For the problem of 3jg 1 property I:: 2 The method of minimum line width unevenness caused by different environment. An improved method for minimizing line width non-uniformity is provided. The present invention is to use the first and second etching of the required features when using a feature on both sides of the ^, and this ^ f ( (dUmmy featUre) photoresist group, and then enter the pseudo-feature photoresist group] The desired photoresist layer and photoresist layer will be present on the film, which is a unique feature film. Then, cover the previous one and then perform a second * photoprotective photoresist to protect the required feature film. The feature film is required: Γ only i. At this time, the etched thin film layer will only exist after that, and then the protective photoresist covered thereon will be removed. Please refer to the characteristics of the third thin film. Illustration. 3A-3C 1 / i Γ does not follow the schematic illustration of a preferred embodiment of the present invention: Figures 1A-1B are the same, and they are drawings of the etching process of isolation features. Referring to FIG. 3A, a thin photoresist 131 on the substrate 11 is located on the ballast film 19n々u, and a film layer 120 is provided to block the patterned film layer 120. The width of the photoresist 131 is the minimum line width. . Disadvantage: The invention is characterized by: a set of false characteristic photoresist groups 202 are added on both sides of photoresist 131, each group of false characteristic photoresist groups 202 includes a plurality of false characteristic photoresists, the line width and characteristics of the characteristic photoresist The line width of the photoresist is corrected using the optical proximity correction (OPC) method, so that the line width of the pseudo-characteristic photoresistance and the line width of the characteristic photoresistance are the same, which are both ^ small lines. Page 9 582057

寬值。此外’偽特徵光阻群2〇2與特徵光阻丨3i之間格距離，以及偽特徵光阻群2 〇 2中各偽特徵光阻之間的間格距離，皆視製程規格而定。在此實施例中，偽特徵光阻群2〇2與特徵光阻 131之間格距離為特徵光阻丨31之線寬的1至3倍，各相鄰的偽特徵光阻之間隔距離亦為特徵光阻丨3 1之線寬的1至3倍。將第3A圖的結構進行蝕刻製程，會得到第3B圖，如第圖所示，特徵光阻131會圖形化出特徵薄膜丨2 la，而偽特徵光阻群202則圖形化出偽特徵薄膜2丨2與214。而後，再利用蝕刻製程將偽特徵薄膜2 1 2與2 1 4除去，則可以得到單一的特丨徵薄膜121a，如第3C圖所示。 ’ 與第1B圖比較，利用本發明之方法所得到的特徵薄膜 1 2 1 a，其最小線寬與特徵光阻丨3 !的最小線寬相同，不再有第1B圖中特徵薄膜121之輪廓微負載效應的問題。承受輪廓微負載效應影響而被變寬的偽特徵薄膜2丨4，則利用姓刻程與偽特徵薄膜21 2 —起去除，只留下原本所需的特徵薄膜 121a。、請參照第4A-4C圖，其繪示依照本發明一較佳實施例的示音圖。第4A-4C與第2A-2B圖相同，皆為密集特徵的蝕刻過程^ 之示意圖。請參照第4A圖，基板110上具有薄膜層12〇徵光阻132、133、134、135與136位於薄膜層12〇之上，用以圖形化薄膜層120，特徵光阻132、133、134、135與136 ' 的寬度皆為最小線寬。 μ 本發明在特徵光阻132與136之外側分別加上一組偽特徵光Wide value. In addition, the grid distance between the pseudo characteristic photoresist group 2002 and the characteristic photoresist 3i, and the intercell distance between each pseudo characteristic photoresist in the pseudo characteristic photoresist group 202, all depend on the process specifications. In this embodiment, the grid distance between the pseudo-characteristic photoresist group 202 and the characteristic photoresistor 131 is 1 to 3 times the line width of the characteristic photoresistor 31, and the distance between each adjacent pseudo-characteristic photoresistor is also It is 1 to 3 times the line width of the characteristic photoresist. The structure of FIG. 3A is subjected to an etching process to obtain FIG. 3B. As shown in the figure, the characteristic photoresist 131 will pattern a feature film 2 la, and the pseudo characteristic photoresist group 202 will pattern a pseudo feature film. 2 丨 2 and 214. Then, the dummy feature films 2 1 2 and 2 1 4 are removed by an etching process, and a single feature film 121 a can be obtained, as shown in FIG. 3C. 'Compared with FIG. 1B, the minimum line width of the characteristic film 1 2 1 a obtained by the method of the present invention is the same as the minimum line width of the characteristic photoresist 3 1. There is no longer the characteristic film 121 of FIG. 1B. The problem of contour micro-load effects. The pseudo-feature film 2 丨 4 that has been widened under the influence of the contour micro-load effect is removed by using the surname process and the pseudo-feature film 21 2 together, leaving only the feature film 121 a originally required. Please refer to FIGS. 4A-4C, which shows a sound diagram according to a preferred embodiment of the present invention. Figures 4A-4C are the same as Figures 2A-2B, which are schematic diagrams of the etching process with dense features ^. Please refer to FIG. 4A. The substrate 110 has a thin film layer 120. The photoresist 132, 133, 134, 135, and 136 are located on the thin film layer 120, and are used to pattern the thin film layer 120. The characteristic photoresist 132, 133, 134 , 135, and 136 'are all minimum line widths. μ The present invention adds a set of pseudo-characteristic light to the outside of the characteristic photoresist 132 and 136 respectively

582057 五、發明說明（7) 阻群202，各組偽特徵光阻群202包含複數個偽特徵光阻。各偽特徵光阻之線寬與特徵光阻之線寬皆利用光學近似修正（optical proximity correcti〇n，〇pc)方法來修正，使偽特徵光阻之線寬與特徵光阻之線寬相同，皆為最小之線寬值。 ' 此外，偽特徵光阻群202與特徵光阻132，偽特徵光阻群2〇 2 與特徵光阻136之間格距離，以及偽特徵光阻群2〇2中各偽特徵光阻之間的間格距離，皆視製程規格而定。在此實施例中’偽特徵光阻群202與特徵光阻132之間格距離以1偽特徵光阻群202與特徵光阻136之間格距離，皆為特徵光阻 13 2之線寬的1至3倍，而各相鄰的偽特徵光阻之間隔距離為特徵光阻1 3 2之線寬的1至3倍。 ’ 將第4A圖的結構進行蝕刻製程，會得到第4β圖，如第〇所示，特徵光阻132、133、134、135與136會分別圖形化特徵薄膜122b、123、124、125與126b，而偽特徵光 2〇2則圖形化出偽特徵薄膜212與214。而後，再利用餘程將偽特徵薄膜212與214除去，則可以得到所需膜 122b、123、124、125 與 126b，如第 4C 圖所示。 / 與第2 B圖比較，利用本發明之方法所得到的特與126b，其最小線寬與光阻132與136相同，不再有外2b( 中特徵薄膜122與126之輪廊微負載效應的問題。二，微負載效應影響而被變寬的偽特徵薄膜214，又輪廓程與偽特徵薄膜212 —起去除，只留下原本所需蝕刻製 122b、123、124、125與126b。々枣厅而的特徵薄膜582057 V. Description of the invention (7) Resistive group 202, each group of false characteristic photoresist groups 202 includes a plurality of false characteristic photoresists. The line width of each pseudo-characteristic photoresistor and the line width of the characteristic photoresistor are all corrected by optical approximation correction (optical proximity correctin), so that the linewidth of the pseudo-characteristic photoresistance is the same as the linewidth of the characteristic photoresistor. , Are the minimum line width values. '' In addition, the false characteristic photoresist group 202 and the characteristic photoresist 132, the grid distance between the false characteristic photoresist group 202 and the characteristic photoresist 136, and the distance between each pseudo characteristic photoresist in the false characteristic photoresist group 202 The grid distance depends on the process specifications. In this embodiment, the grid distance between the pseudo-characteristic photoresist group 202 and the feature photoresistor 132 is 1 grid distance between the pseudo-characteristic photoresist group 202 and the feature photoresistor 136, which are all the line widths of the feature photoresistor 13 2 1 to 3 times, and the distance between adjacent pseudo-feature photoresists is 1 to 3 times the line width of the feature photoresist 1 2 2. '' The structure of FIG. 4A is subjected to an etching process, and a 4β figure is obtained. As shown in FIG. 0, the characteristic photoresists 132, 133, 134, 135, and 136 will pattern the feature films 122b, 123, 124, 125, and 126b, respectively. , And the pseudo-feature light 202 patterned the pseudo-feature films 212 and 214. Then, the pseudo-feature thin films 212 and 214 are removed by using the residual process, and the required films 122b, 123, 124, 125, and 126b can be obtained, as shown in FIG. 4C. / Compared with Fig. 2B, the special line 126b obtained by the method of the present invention has the same minimum line width as the photoresist 132 and 136, and no longer has the micro-load effect of the outer contour of the outer 2b (middle feature films 122 and 126). Second, the widened pseudo-feature film 214 is affected by the micro-load effect, and the contour path and the pseudo-feature film 212 are removed together, leaving only the original etching 122b, 123, 124, 125, and 126b required. 々 Characteristic film of jujube hall

582057 五、發明說明（8) 以上兩個實施例中所應用的蝕刻製程至少包含濕蝕刻與乾蝕刻，這兩種蝕刻方式皆可應用本發明之方法來減少輪廊微負載效應對最小線寬的影響。以下會各舉一實施例來說明本發明在濕蝕刻與乾蝕刻上的應用。請參照第5 A - 5 F圖，其繪示在濕I虫刻製程中應用本發明之— 較佳實施例的示意圖。請參照第5A圖，基板1丨〇上具有薄膜層120，特徵光阻511與512位於薄膜層120之上，用以圖形、化薄膜層120，特徵光阻5 11與512的寬度皆為最小線寬用濕14刻的薄膜層1 2 0之材質至少包含石夕、氧化石夕、氮化石夕與金屬。本發明在特徵光阻5 11與5 1 2之外側分別加上一組丨偽特徵光阻群502，各組偽特徵光阻群5〇2包含複數個偽特徵光阻’各偽特徵光阻皆具有最小線寬，而各偽特徵光阻之間隔距離則視製程規格而定。將第5 A圖的結構進行濕蝕刻製程，會得到第5B圖，如第圖所示，特徵光阻511與512分別圖形化出特徵薄膜521與 522，而偽特徵光阻群5〇2則圖形化出偽特徵薄膜514與 516。而後，在特徵薄膜521、522以及偽特徵薄膜”^““ 之上覆蓋一層光阻層530，如第5C圖所示。接著，利用光罩 ί5=2ί阻，’此保護光阻534覆蓋包圍所需的特徵薄I 膜521,、522 ’在此利用保護光阻534保護特徵薄膜521斑 522，以阻隔之後濕蝕刻製程對特徵薄膜521與522的侵蝕。之後，再經過曝光顯影的步驟後，將不來：如第5D圖所示。然後進行第二的Ϊ 蝕d v驟去除不給要的偽特徵薄膜514與516，且保留所 582057582057 V. Description of the invention (8) The etching process applied in the above two embodiments includes at least wet etching and dry etching. Both of these etching methods can be applied to reduce the minimum line width of the micro-loading effect of the corridor by applying the method of the present invention. Impact. Hereinafter, each embodiment will be described to illustrate the application of the present invention to wet etching and dry etching. Please refer to FIGS. 5A to 5F, which are schematic diagrams illustrating the application of the present invention in the wet I insect carving process—a preferred embodiment. Please refer to FIG. 5A. The substrate 1 has a thin film layer 120, and the characteristic photoresists 511 and 512 are located on the thin film layer 120 to pattern and pattern the film layer 120. The widths of the characteristic photoresist 5 11 and 512 are the smallest. The material of the thin film layer 1 2 0 with 14 lines of wet line width includes at least Shi Xi, Xi Shi Xi, Ni Xi Shi and metal. In the present invention, a set of 丨 pseudo-characteristic photoresistor groups 502 are added to the outside of the characteristic photoresistors 5 11 and 5 1 2, and each group of pseudo-characteristic photoresistor groups 502 includes a plurality of pseudo-characteristic photoresistors. All have a minimum line width, and the distance between each pseudo-feature photoresist depends on the process specifications. The structure of FIG. 5A is subjected to a wet etching process to obtain FIG. 5B. As shown in the figure, the characteristic photoresists 511 and 512 respectively pattern the characteristic films 521 and 522, and the pseudo characteristic photoresist group 502 is The dummy feature films 514 and 516 are patterned. Then, a photoresist layer 530 is covered on the feature films 521, 522 and the pseudo-feature films, as shown in FIG. 5C. Then, a photomask 5 = 2 is used, and 'this protective photoresist 534 covers and surrounds The required characteristic thin film 521, 522 'is used here to protect the characteristic film 521 and 522 with the protective photoresist 534 to block the erosion of the characteristic films 521 and 522 by the wet etching process. Then, after the exposure and development step, Will not come: as shown in Figure 5D. Then a second etch dv is performed to remove the unwanted pseudo-feature films 514 and 516, and the 582057 is retained.

五、發明說明（9) 二的特徵薄膜521與522，得到如第5E圖的結果。最後，去二特破薄膜521與522上覆蓋的保護光阻534，即可得到所需 =特徵薄膜521與522，如第5F圖所示。 :多照第6A-6F圖，其繪示在乾蝕刻製程中應用本發明之一施例，日示气圖。請參照第6A圖’基板110上具有多晶 ^ 夕日日石夕薄膜層上具有硬遮罩（hard mask)層620， =徵光阻632位於硬遮罩層62〇之上，特徵光阻632的寬度二，小線寬。應用乾蝕刻的薄膜層之材質除多晶矽外，質::丨ί ,質、早晶矽、氧化矽或金屬等，而硬遮罩層的材 ^ j為亂化石夕、氧氮化石夕、非結晶碳或氮化碳等。本發明 ^ $徵光阻632之外側分別加上一組偽特徵光阻群634，各 ΪίΪί”ϊ634包含複數個偽特徵光阻，各偽特徵光阻而各偽特徵光阻之間隔距離則視製程規結構進行硬遮罩的蝕刻製程，會得到第_， ^第6Β圖所示，特徵光阻632圖形化出硬遮罩特徵⑽ ;特f光阻群634則圖形化出偽硬遮罩特徵624&與62扑。而，，^硬遮罩特徵622以及偽硬遮罩特徵“切與“ =二阻層，’如第6C圖所示。接著，利用光罩選取： ^光阻36 ’此保護光阻636覆蓋包圍所需的硬遮罩特徵 622，利用保護光阻636保護硬遮罩特徵⑽，以阻硬遮罩钱刻製程對硬遮罩特徵622的侵蝕。 4、之後，再經過曝光顯影的步驟後，將不需要的徵624a與624b裸露出來’如第6])圖所示。然後進行硬遮罩第13頁 582〇57 五、發明說明（10) 程’去除不需要的偽硬遮罩特徵624a與624b，且 ^ =的硬遮罩特徵622 ’再經過綠二Γϋ第6E圖的結果°而後，進行乾韻刻的步驟，利 ==徵622選取敍刻多晶石夕層61◦，最後再利用硬遮 =如二遮罩特徵622，即可得到所需的特徵薄賤bl2，如第6F圖所示。實施例中’一組偽特徵光阻群内含有兩個以上 3 = Γ招然而，偽特徵光阻群内含的偽特徵光阻之間;利用的空 =越：：偽特：光阻，可減少越多的：廓微側 =外，U上四個實施例中所使用的光阻都是正光阻，缺 L本發明亦可使用負光阻來實施，亦可以達到同㈣效由以上實施例可知’本發明之方法也應用在光罩， t用各階段不同光罩遮擋區域的不同來實施本發明:方法。第7A-7C圖為本發明應用在第3a_3c圖 =光罩組合，此實施例中的餘刻製程係== 作為光阻材料。以下以第7A_7C圖的光罩組合圖的蝕刻過程來說明本發明之方法。第《3Α 3C $ ^第7A圖所示’第-組光罩m具有所需特徵7Q2* 群m。先使用第-組光罩71G曝光光阻層，使光阻層^ 徵光阻131之兩側多加上偽特徵光阻群2〇2，如第μ所、示，然後進行第-次蝕刻製程。第一次蝕刻製程完成後， 582057 五、發明說明（11) 阻層’然後利用第7β圖令的第二組光罩· ϊ d:所需特徵薄膜_之上的光阻不被曝光顯膜212與214ί上的光阻被曝光顯影，再人』製輊，去除不而要的偽特徵薄膜21 2與徵^膜^la進。行去光阻的步驟，即可得到第3C圖之所需的特冰寺:使用的第一組光罩除了如第7β圖所示的光罩720a之 7?n 可使用如第7C圖所示的光罩72〇b。第7B圖中的光罩 a糸利用遮擋區域712來保護第3B圖中所需特徵薄膜121a 的光阻，其餘的部分皆不予遮擋，而第7c圖中的光罩則疋利用曝光區域71 4將偽特徵薄膜2 1 2與2 1 4之上的光阻曝光以便利用蝕刻製程來移除。 ί = ’以上所述之本發明之製程方法與結構，亦可應用於尤罩的製作中。應用本發明之製程方法與結構，可得到一 ς有均勻的最小線寬之光罩。在此製造光罩所應用的製程去可為濕蝕刻或乾蝕刻製程，其中此光罩所應用的薄膜層材質為鉬、鉻或矽化鉻等。由上述本發明較佳實施例可知，應用本發明具有下列優 ”、占本發明可使同一晶片上的特徵之最小線寬均勻，不受 =邊環境的影響。因此同一晶片上各線路訊號傳遞的速度 =致，避免訊號傳遞速率的偏差，降低晶片運算的錯誤率 &咼晶片運真的效此。本發明所應用的方法與設備皆為—般半導體製程中所常用的方法與設備，可輕易地實施在目前的半導體製程中。而且本發明可應用的範圍廣泛，V. Description of the invention (9) The characteristic films 521 and 522 of the second have the results as shown in FIG. 5E. Finally, by removing the protective photoresist 534 over the two special breaking films 521 and 522, the required characteristic films 521 and 522 can be obtained, as shown in FIG. 5F. : Multi-photographs 6A-6F, which shows the application of one embodiment of the present invention in a dry etching process, and a daily gas diagram. Please refer to FIG. 6A, “Polycrystalline on the substrate 110 has a hard mask layer 620 on the film layer. The photoresist 632 is located above the hard mask layer 62. The characteristic photoresist 632 The width is two, the small line width. In addition to polycrystalline silicon, the material of the dry-etched thin film layer is: polycrystalline, early-crystalline silicon, silicon oxide, or metal, etc., and the material of the hard mask layer is j. Fossil, oxynitride, non-crystalline Crystalline carbon or carbon nitride. In the present invention, a set of pseudo-feature photoresist groups 634 are respectively added on the outer side of the levied photo-resistor 632, each of which includes a plurality of pseudo-feature photoresistors, and the distance between each pseudo-feature photoresist and each pseudo-feature photoresist is determined by The etching process of the hard mask using the manufacturing process structure will obtain the _, ^ and 6B, the characteristic photoresist 632 patterned the hard mask features ⑽; the special f photoresist group 634 the patterned pseudo hard mask Features 624 & and 62. And, ^ hard mask feature 622 and pseudo-hard mask feature "cut and" = two-resistance layer, as shown in Figure 6C. Then, use the photomask to select: ^ Photoresistance 36 'This protective photoresist 636 covers the hard mask features 622 required to surround it. The protective photoresist 636 is used to protect the hard mask features ⑽ to prevent the hard mask features from eroding the hard mask features 622. 4. After that, After the step of exposure and development, the unnecessary signs 624a and 624b are exposed to the naked body as shown in the figure 6). Then, a hard mask is performed on page 13 582〇57 V. Description of the invention (10) Process The required pseudo-hard mask features 624a and 624b, and ^ = 's hard-mask feature 622' then passes the second green Γ ϋ sixth The result of the E diagram ° Then, the dry rhyme engraving step is performed, and the == levy 622 selects the engraved polycrystalline stone layer 61. Finally, the hard mask = such as the second mask feature 622 can be used to obtain the required features. Thin base bl2, as shown in Figure 6F. In the embodiment, 'a group of pseudo-feature photoresistor groups contains more than two 3 = Γ trick. However, between the pseudo-feature photoresistors included in the pseudo-feature photoresistor group; Null = Vis :: Pseudo-specific: Photoresistance, which can be reduced more: Contour side = outside, the photoresistance used in the four embodiments on U are all positive photoresistances, and negative photoresistances can also be used in the present invention. The same effect can be achieved by the implementation. From the above embodiments, it can be known that the method of the present invention is also applied to a photomask, and the present invention is implemented using different photomask blocking areas at different stages: the method. Figures 7A-7C are as follows. The invention is applied in Figures 3a_3c = photomask combination, and the remaining process system in this embodiment == as a photoresist material. The etching process of the photomask combination chart in Figures 7A_7C is used to illustrate the method of the present invention. 3C $ ^ The 7th group mask m has the required characteristics as shown in Figure 7A. 7Q2 * group m. First, use the 71G group mask to expose the light. A photoresist layer is added to both sides of the photoresist layer ^ The photoresist layer 131 is added with a pseudo-feature photoresist group 202, as shown in μ, and then the first etching process is performed. After the first etching process is completed, 582057 V. Description of the invention (11) The resist layer 'then use the second set of photomasks of 7β order. Ϊ d: The photoresistor on the required feature film _ is not exposed. The photoresistors on the display films 212 and 214 are exposed. Develop and re-manufacture ”, remove the unwanted pseudo-feature film 21 2 and the film ^ la. Perform the step of removing the photoresist to get the special ice temple required in Figure 3C: A group of photomasks other than the photomasks 720a-7n shown in FIG. 7β may use the photomask 72b shown in FIG. 7C. The photomask a in FIG. 7B uses the shielding area 712 to protect the photoresist of the required feature film 121a in FIG. 3B, and the rest is not blocked, while the photomask in FIG. 7c uses the exposure area 71. 4. Expose the photoresist on the dummy feature films 2 1 2 and 2 1 4 to be removed by an etching process. ί = ’The process method and structure of the present invention described above can also be applied to the production of the hood. By applying the manufacturing method and structure of the present invention, a photomask with uniform minimum line width can be obtained. The process used to make the photomask here can be a wet or dry etching process, where the material of the thin film layer used in this photomask is molybdenum, chromium or chromium silicide. From the above-mentioned preferred embodiments of the present invention, it can be known that the application of the present invention has the following advantages ", occupying the present invention can make the minimum line width of the features on the same wafer uniform and not affected by the surrounding environment. Therefore, the signal transmission of each line on the same wafer Speed = to avoid deviation of signal transmission rate, reduce the error rate of chip operation & chip operation effect. The methods and equipment used in the present invention are the methods and equipment commonly used in general semiconductor processes, It can be easily implemented in the current semiconductor manufacturing process. Furthermore, the invention can be applied in a wide range,

第15頁 582057 五、發明說明（12) =二=#刻或是濕餘刻皆可應用本發明來提高最小線寬的 ΐίίΓ月已以一較佳實施例揭露如1，然其並非用以限 _ ’當可作各種之更動與潤飾，因此本圍當視後附之申請專利範圍所界定者為準。 ”邊辄Page 15 582057 V. Description of the invention (12) = 二 = # In the moment or wet moment, the present invention can be applied to increase the minimum line width. Ϊ́ίΓΓ has been disclosed in a preferred embodiment as 1, but it is not used for Limit _ 'When all kinds of changes and retouching can be made, this section shall be subject to the definition of the scope of patent application attached. Bian

第16頁 582057Page 16 582057

為讓本發明之上述和其他目的懂，下文特舉一較佳實施例，明如下：、特徵、和優點能更明顯易並配合所附圖式，作詳細說第1 A-1B圖是隔離特徵的蝕刻過程第2 A-2B圖是密集特徵的蝕刻過程第3 A-3C圖係繪示本發明應用在隔佳實施例的示意圖。第4 A-4C圖係繪示本發明應用在密佳實施例的示意圖。第5 A-5F圖係繪示本發明應用在濕的示意圖。之示意圖。之示意圖。離特徵的触刻過程之一較集特徵的蝕刻過程之一In order to make the above and other objects of the present invention comprehensible, a preferred embodiment is exemplified below, which is described as follows: Features, advantages, and advantages can be more obvious and easy to cooperate with the accompanying drawings, and in detail, FIG. 1 A-1B is isolated Figures 2A-2B of the etching process of features are diagrams of Figure 3A-3C of the etching process of dense features. Figures 4A-4C are schematic diagrams illustrating the application of the present invention to a preferred embodiment. Figures 5A-5F are schematic diagrams showing the application of the present invention to wet conditions. The schematic. The schematic. One of the feature-etching processes is one of the feature-etching processes.

蝕刻過程之一較佳實施例第6 A-6F圖係繪示本發明應用在乾蝕刻的示意圖。過程之一較佳實施例第7A-7C圖係繪示本發明應用在第3Α —3ϋ圖之光罩組合的示圖式標記說明 11 0 :基板 1 2 0 :薄膜層 121 、 121a 、 122a 、 122b 、 123 、 124 、 125 、 126a 、 126b : 特徵薄膜A preferred embodiment of the etching process. Figures 6A-6F are schematic diagrams illustrating the application of the present invention to dry etching. A preferred embodiment of the process. Figures 7A-7C are diagrammatic illustrations of the mask combination of the present invention applied to Figures 3A to 3I. 11 0: Substrate 1 2 0: Thin film layers 121, 121a, 122a, 122b, 123, 124, 125, 126a, 126b: Feature films

131、132、133、134、135、136 :特徵光阻 2 0 2 :偽特徵光阻群131, 132, 133, 134, 135, 136: characteristic photoresist 2 0 2: pseudo characteristic photoresist group

第17頁 582057 圖式簡單說明 2 1 2、2 1 4 :偽特徵薄膜 5 0 2 :偽特徵光阻群 5 11、5 1 2 :特徵光阻 5 1 4、5 1 6 :偽特徵薄膜 521、522 :特徵薄膜 5 3 0 :光阻層 534 :保護光阻 6 1 0 :多晶矽層 620 :硬遮罩層 622 :硬遮罩特徵 624a、624b :偽硬遮罩特徵 6 3 0 :光阻層 6 3 2 :特徵光阻 634 :偽特徵光阻群 6 3 6 :保護光阻 710、720a、720b :第一組光罩 702 :所需特徵 704 :偽特徵群 712 :遮擋區域 7 1 4 :曝光區域Page 17 582057 Brief description of the diagram 2 1 2, 2 1 4: Pseudo-feature film 5 0 2: Pseudo-feature photoresist group 5 11, 5 1 2: Characteristic photoresist 5 1 4, 5 1 6: Pseudo-feature film 521 522: Feature film 5 3 0: Photoresist layer 534: Protective photoresist 6 1 0: Polycrystalline silicon layer 620: Hard mask layer 622: Hard mask feature 624a, 624b: Pseudo-hard mask feature 6 3 0: Photoresist Layer 6 3 2: Feature photoresist 634: Pseudo-feature photoresist group 6 3 6: Protective photoresist 710, 720a, 720b: First group of photomasks 702: Required features 704: Pseudo-feature group 712: Blocking area 7 1 4 : Exposure area

Claims

582057 六、申請專利範圍 1. -種最小線寬不均勻性的改善方法一特徵光阻群在一薄膜層上定義具有一文=方法係利用薄膜群，該特徵光阻群包含至少一線—特徵不均句性的改善方法至少包含以下=先阻，该最小線寬 ί群：兩外側各形成-偽特徵光阻群. 以及在該些偽特徵光阻群下方分膜群群；山嗎特破薄膜覆f層於β亥特徵薄膜群之上，該些偽特徵薄膜群之上；更屬不覆盍於該蝕刻該些偽特徵薄臈群；以及去除該保護層。 2. 方該如申：專利範圍第!項所述之最小線寬不 J ’其中5亥偽特徵光阻群與該特徵光阻群之門隔：：：特徵光阻之線寬的丨至3件。灸間隔距離為 3 ·如申請專利範圍第i 方法，其中每一該些偽阻。項所述之最小線寬不均勻性的改善特徵光阻群包含至少一偽特徵光^582057 6. Scope of patent application 1.-A method for improving the smallest line width non-uniformity-a characteristic photoresist group is defined on a thin film layer = a method = using the film group, the characteristic photoresist group contains at least one line-characteristic The method for improving the uniformity includes at least the following = first resistance, the minimum line width group: each side forms a pseudo-feature photoresist group, and a film group group below the pseudo-feature photoresist groups; The thin film is coated on the β feature film group and on the dummy feature film groups; it is not covered on the etching of the dummy feature film groups; and the protective layer is removed. 2. This should be claimed: the minimum line width described in item No. of the patent scope is not J ', where the gate of the 5th pseudo-resistance photoresistance group and the characteristic photoresistance group is separated from the line width of the characteristic photoresistance to: 3 pieces. The distance between moxibustions is 3. As in method i of the patent application, each of them is false. The improvement of the minimum line width non-uniformity described in the above item. The characteristic photoresist group contains at least one pseudo characteristic light ^

1 ·如申請專利範圍第3 方法，其中當該偽特徵的偽特徵光阻之間隔距項所述之最小線寬不均勻性的改善 · 光阻之數目為複數個時，該些相鄰離為該特徵光阻之線寬的1至3倍。1 · Method 3 of the scope of patent application, wherein when the minimum line width non-uniformity described in the pseudo-feature photoresistance interval distance item is improved, when the number of photoresists is plural, the adjacent separations It is 1 to 3 times the line width of the characteristic photoresist.

第19頁 582057 六、申請專利範圍 5 ·如申請專利範圍第3項所述之最小線寬不均勻性的改善方法，其中該特徵光阻與該偽特徵光阻之線寬係利用光學近似修正方法修正，使該偽特徵光阻之線寬與該特徵光阻之線寬相同。 6 ·如申請專利範圍第1項所述之最小線寬不均勻性的改善方法，其中該保護層的材質至少包含光阻。 · 7 ·如申請專利範圍第1項所述之最小線寬不均勻性的改善方法，其中該薄膜層的材質襄少包含石夕。 8. 如申請專利範圍第1項所述之最小線寬不均勻性的改善方法，其中該薄膜層的材質矣少包含氧化石夕。 9. 如申請專利範圍第1項所述之最小線寬不均勻性的改善方法，《中該薄膜層的材質炙少包含氮化矽。 10·如申請專利範圍第1頊所述之最小線寬不均勻性的改善方法，其中該薄膜層的材質多少包含金屬。 11 ·如申請專利範圍第1項所述之最小線寬不岣勻性的改善. 方法，其中該薄膜層的材質0Page 19 582057 6. Application Patent Range 5 · The method for improving the minimum line width non-uniformity as described in item 3 of the patent application range, wherein the line widths of the characteristic photoresist and the pseudo characteristic photoresist are corrected by optical approximation The method is modified so that the line width of the pseudo-characteristic photoresist is the same as the line width of the characteristic photoresist. 6. The method for improving the minimum line width non-uniformity according to item 1 of the scope of patent application, wherein the material of the protective layer includes at least a photoresist. · 7 · The method for improving the minimum line width non-uniformity as described in item 1 of the scope of patent application, wherein the material of the thin film layer contains less Shi Xi. 8. The method for improving the minimum line width non-uniformity as described in item 1 of the scope of the patent application, wherein the material of the thin film layer does not include oxide stone. 9. According to the method for improving the minimum line width non-uniformity described in item 1 of the scope of the patent application, the material of the thin film layer contains less silicon nitride. 10. The method for improving the minimum line width non-uniformity according to the first aspect of the patent application scope, wherein the material of the thin film layer contains a metal to some extent. 11 · The improvement of the minimum line width unevenness as described in the first item of the patent application method. The method, wherein the material of the thin film layer is 0

第20頁 582057 六、申請專利範圍 ^___ 如申請專利範圍第i項所述之最，其中該薄膜層的材質至少包含終。句勻性的改善 12. ................. 方法，其中該薄膜層的材質至少包含鉻 13. 如申請專利範圍第1項所述之最小線宦兀方法，其中該薄膜層的 j線寬不岣勻性的改善 %貝至少包含矽化鉬。 14. 一種最小線寬不均勻性的改盖用一特徵光阻群在一硬遮罩層=二二女j改善方法係利特徵硬遮罩群，該特徵光阻；包：線寬的一小線寬不均勻性的改善方法牛二光阻’該最蚀刻該硬遮罩層，在兮成一偽特徵光阻群；罩群以及在該4b偽特^来二雜阻群下方敍刻出該特徵硬遮遮罩群；-偽特试先阻群下方分別姓刻出—偽特徵硬覆蓋一保遵層於該特徵該些偽特徵硬遮罩群之上；早野 ^保濩層不覆蓋於 I虫刻该些偽特徵硬遮罩群；以及去除該保護層。 ’ 15·如申請專利範圍第14項所述之最小線寬不均勻性的改善方法，其令該偽特徵光阻群與該特徵光阻群之為該特徵光阻之線寬的丨至3倍。離 1 6·如申請專利範圍第1 4項所述之最小線寬不均勻性的改 582057 六、申請專利範圍阻群包含至少一偽特徵光善方法，其中每一該些偽特徵光阻。 17·如申請專利範圍第16項戶斤述之最小線寬不肖句性的改善方法，其中當該偽特徵光阻之數目為複數個時，該些相鄰的偽特彳政光阻之間隔距離為該特徵光阻之線寬的1至3 倍0 1 8 ·如申請專利範圍第1 6項所述之最小線寬不均勻性的改善方法’其中該特徵光阻與該偽特徵光阻之線寬係利用光學近似修正方法修正，使該偽特徵光阻之線寬與該特徵光阻之線寬相同。 19·如申請專利範圍第丨4項所述之最小線寬不均勻性的改善方法，其中該保護層的材質至少包含光阻。 20·如申請專利範圍第丨4項所述之最小線寬不均勻性的改善方法，其中該薄膜層的材質至少包含氧化矽。 21 ·如申請專利範圍第1 4項所述之最小線寬不均勻性的改Μ 善方法，其中該薄膜層的材質至少包含多晶矽。 2 2·如申請專利範圍第丨4項所述之最小線寬不岣勻性的改善方法，其中該薄膜層的材質至少包含單晶矽。Page 20 582057 6. Scope of patent application ^ ___ As described in item i of the patent application scope, wherein the material of the thin film layer includes at least the final material. Improvement of sentence uniformity 12.... Method, wherein the material of the thin film layer contains at least chromium 13. The minimum line as described in item 1 of the scope of patent application The method, wherein the improvement in j-line width unevenness of the thin film layer includes at least molybdenum silicide. 14. A modification of the smallest line width non-uniformity uses a characteristic photoresist group on a hard mask layer = two or two women. The improvement method is to use the characteristic hard mask group. The characteristic photoresistance includes: Method for improving small line width inhomogeneity Niu Er's photoresist, the hard mask layer is etched to form a pseudo-feature photoresist group; the mask group and the feature are engraved under the 4b pseudo-specific hetero-resistance group Hard mask groups;-Pseudo special tests first block the last names inscribed under the groups-pseudo features hard cover a compliance layer on top of the features of these pseudo features hard mask groups; Hayano ^ Baoya layer does not cover I Insects etch the pseudo-feature hard mask groups; and removes the protective layer. '15. The method for improving the minimum line width non-uniformity as described in item 14 of the scope of the patent application, which makes the pseudo characteristic photoresist group and the characteristic photoresist group the line width of the characteristic photoresistor to 3 Times. From 16. The improvement of the minimum line width non-uniformity as described in item 14 of the scope of patent application 582057 6. The scope of patent application The resistance group includes at least one pseudo-feature photoresistance method, each of which is a pseudo-feature photoresist. 17. · The method for improving the minimum line width of a non-sentence sentence as described in item 16 of the scope of patent application, wherein when the number of the pseudo-feature photoresists is plural, the separation distance between the adjacent pseudo-special photoresistors 1 to 3 times the line width of the characteristic photoresistor 0 1 8 · The method for improving the minimum line width non-uniformity as described in item 16 of the scope of patent application ', wherein the characteristic photoresistor and the pseudo characteristic photoresistor are The line width is corrected using an optical approximation correction method so that the line width of the pseudo-characteristic photoresist is the same as the line width of the characteristic photoresist. 19. The method for improving the minimum line width non-uniformity according to item 4 of the patent application scope, wherein the material of the protective layer includes at least a photoresist. 20. The method for improving the minimum line width non-uniformity according to item 4 of the patent application scope, wherein the material of the thin film layer includes at least silicon oxide. 21. The method for improving the minimum line width non-uniformity according to item 14 of the scope of patent application, wherein the material of the thin film layer includes at least polycrystalline silicon. 2 2 · The method for improving the minimum line width unevenness as described in item 4 of the patent application scope, wherein the material of the thin film layer includes at least single crystal silicon.

第22頁 582057Page 582 057

六、申請專利範圍 2 3·如申請專利範圍第丨4項所述之最小線寬不岣勻性的改善方法，其中該薄膜層的材質至少包含金屬。 2 4.如申請專利範圍第1 4項戶斤述之最小線寬不均勻性的改善方法，其中該薄膜層的材質至少包含鉬。6. Scope of patent application 2 3. The method for improving the minimum line width unevenness as described in item 丨 4 of the scope of patent application, wherein the material of the thin film layer includes at least metal. 2 4. The method for improving the minimum line width non-uniformity described in item 14 of the scope of patent application, wherein the material of the thin film layer includes at least molybdenum.

2 5·如申請專利範圍第1 4項所述之最小線寬不岣勻性的改善方法，其中該薄膜層的材質至少包含鉻。 2 6.如申請專利範圍第丨4項所述之最小線寬不均勻性的改善方法，其中該薄膜層的材質至少包含石夕化銦。 2 7 ·如申請專利範圍第1 4項所述之最小線寬不均勻性的改善方法，其中該薄膜層的材質至少包含介電材質。 2 8 ·如申請專利範圍第1 4項所述之最小線寬不岣勻性的改善方法，其中該硬遮罩層的材質至少包含氮化矽。25. The method for improving the minimum line width unevenness as described in item 14 of the scope of patent application, wherein the material of the thin film layer includes at least chromium. 2 6. The method for improving the minimum line width non-uniformity as described in item 4 of the patent application scope, wherein the material of the thin film layer includes at least indium petrochemical. 27. The method for improving the minimum line width non-uniformity according to item 14 of the scope of patent application, wherein the material of the thin film layer includes at least a dielectric material. 28. The method for improving the minimum line width unevenness as described in item 14 of the scope of patent application, wherein the material of the hard mask layer includes at least silicon nitride.

2 9·如申請專利範圍第丨4項所述之最小線寬不岣勻性的改善方法，其中該硬遮罩層的材質至少包含氧氮化矽。 3 0·如申請專利範圍第丨4項所述之最小線寬不岣勻性的改善方法，其中該硬遮罩層的材質至少包含非結晶碳。29. The method for improving the minimum line width unevenness as described in item 4 of the patent application scope, wherein the material of the hard mask layer includes at least silicon oxynitride. 30. The method for improving the minimum line width unevenness as described in item 4 of the patent application scope, wherein the material of the hard mask layer includes at least amorphous carbon.

第23頁 582057 六、申請專利範圍 31·如申請專利範圍第14項所述之最小線寬不均勻性的改善方法’其中該硬遮罩層的材質至少包含氮化碳。 32 第種光光罩組合，該光罩組合至少包含：及複數個該第一特一第二光該第三區徵區域，徵區域或其中該第成至少一光罩係定罩，且該第第"一特徵區徵區域的兩罩，且該第域之位置係且該第三區該些第二特一光罩係在第一特徵薄義一第二光 33·如申請專利範圍特彳政區域與每一該些徵薄膜之線寬的1至3 34·如申請專利範圍二光阻層之材質為正每一該些第二特徵區光罩上包含至少一第一特徵區域以域，其中該些第二特徵區域分別位於侧；以及 ' 二光罩上包含至少一第三區域，其中對應於該第一特徵區域或該些第^特域之尺寸大於上述所對應之該第一特徵區域的尺寸； * 一薄膜層上定義一第一光阻層，以形膜以及複數個第二特徵薄膜，該第二阻層，以保護該第一特徵薄膜。第32項所述之光罩組合，其中該第— 第二特徵區域之間隔距離為該第— 倍。 f 第32項所述之光罩組合，其中當該光阻時，該第三區域之位置係^於域之位置。 ^ ' iPage 23 582057 6. Scope of patent application 31. The method for improving the minimum line width non-uniformity as described in item 14 of the scope of patent application, wherein the material of the hard mask layer includes at least carbon nitride. 32 A first photomask combination, the photomask combination includes at least: and a plurality of the first special second light and the third area sign area, or the sign area or the first at least one photomask set fixed cover, and the The two masks of the first " characteristic zone, and the location of the first zone are and the second special masks of the third zone are located on the first feature. The political area and the line width of each of the levied films are 1 to 3 34. If the patent application scope is two, the material of the photoresist layer is positive. Each of the second feature areas includes at least one first feature area on the photomask. Domains, where the second characteristic areas are respectively located on the sides; and the two photomasks include at least one third area, wherein the size corresponding to the first characteristic area or the ^ th special domains is larger than the corresponding corresponding first area. The size of a feature area; * a first photoresist layer is defined on a thin film layer to form a film and a plurality of second feature films, and the second resist layer is to protect the first feature film. The photomask combination according to item 32, wherein an interval distance between the first and second characteristic regions is twice the first. f The photomask combination according to item 32, wherein when the photoresist is used, the position of the third region is at the position of the field. ^ 'i

582057 六、申請專利範圍 35.如申請專利範圍第32項所述之光罩組合，其中當該第二光阻層之材質為負光阻時，該第三區域之位置係對應於該第一特徵區域之位置。 a582057 6. Application patent scope 35. The photomask combination described in item 32 of the scope of patent application, wherein when the material of the second photoresist layer is negative photoresist, the position of the third region corresponds to the first The location of the feature area. a

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