TW200418087A

TW200418087A - A method of improving the non-uniformity of critical dimensions

Info

Publication number: TW200418087A
Application number: TW92104725A
Authority: TW
Inventors: Jaw-Jung Shin; Chih-Ming Ke; Burn-Jeng Lin
Original assignee: Taiwan Semiconductor Mfg
Priority date: 2003-03-05
Filing date: 2003-03-05
Publication date: 2004-09-16
Also published as: TW582057B

Abstract

A method of improving the non-uniformity of critical dimensions is provided. A dummy feature photoresist group is formed in each side of a feature photoresist group. Using the dummy feature photoresist groups makes the environment around the feature photoresist group be similar, this method is able to reduce the non-uniformity of critical dimensions due to the different environment during the exposure and etching process.

Description

200418087 五、發明說明（1) 發明所屬之技術領域本發明是有關於一種半導體製程的方法，且特別是有關於一種最小線寬不均勻性的改善方法。先前技術由於半導體產業快速與蓬勃的發展，當製程技術演進到深次微米技術時’尤其是到了 90奈米以下時，需要使用極精細的微影與钱刻技術，方能製造出所需的積體電路。當積體電路的電路密度增加’最小線寬（critical dimensi〇n， CD)也必須愈來愈小，故製程的控制也更行困難。在1C製程中’若使用光阻來圖案化薄膜會有兩個主要的問題：光學近似效應（optical pr〇ximity effect，〇pE)與輪廓微負載效應（profile microl〇ading effect)。光學近似效應係各個圖案化的特徵（f eature)會因為周邊環境不同而導致曝光後的效果有所不同。輪廓微負載效應係由於在蝕刻過程中，隔離特徵（isolated feature)的區域因為缺由鄰近特徵幫助造成的侧壁银刻’使得隔離特徵的最小寸會見於原本光阻所定義的最小尺寸。，上兩個效應都是因冑特徵的周邊環境不同而Μ，成在同一基板上不同區域的特徵，其最曰^錢的狀態。以下舉出兩個習知的隔離特徵與密=不均勻 f:，，)的例子來說明特徵的周圍環境對_製程(的7 第ΙΑ-1B圖疋隔離特徵的姓刻過程之之不思圖，隔離特徵係指 200418087 五、發明說明（2) 在一特定區域内只存在單一特徵的圖案，該特徵的寬度為最小線寬。請參照第1 A圖，基板1丨〇上具有薄膜層1 20，特徵光阻131位於薄膜層120之上，用以圖形化薄膜層120，特徵光阻1 3 1的寬度為最小線寬。將第丨A圖的結構進行蝕刻製程’會得到第1 B圖，特徵薄膜丨2 1的最小線寬會大於特徵光阻1 31的最小線寬。第2 A-2B圖是密集特徵的蝕刻過程之示意圖，密集特徵係指在一特定區域内存在複數個特徵的圖案，該些特徵的寬度皆為最小線寬。請參照第2人圖，基板n〇上具有薄膜層 120，特徵光阻132、133、134、135與136位於薄膜層120 ^200418087 V. Description of the invention (1) Technical field to which the invention belongs The present invention relates to a method for semiconductor manufacturing, and more particularly to a method for improving the smallest line width nonuniformity. Due to the rapid and vigorous development of the semiconductor industry, when the process technology evolves to deep submicron technology, especially when it is below 90 nanometers, it is necessary to use extremely fine lithography and money engraving technology to produce the required Integrated circuit. When the circuit density of the integrated circuit increases, the critical line width (critical dimension, CD) must also be smaller and smaller, so the control of the process is more difficult. In the 1C process, 'if photoresist is used to pattern the film, there are two main problems: optical approximation effect (oEp) and profile microloading effect (profile effect). The optical approximation effect is that each patterned feature (f eature) will have different effects after exposure due to different surrounding environments. The contour micro-loading effect is that during the etching process, the area of the isolated features is not etched by the side wall due to the help of adjacent features, so that the smallest size of the isolated feature will be found in the smallest size originally defined by the photoresist. Both of the above two effects are due to the difference in the surrounding environment of the plutonium feature, which is a feature of different areas on the same substrate, and its most expensive state. The following two examples of isolated isolation features and dense = uneven f: ,,) are used to illustrate the surrounding environment of the feature. The process of thinking about the engraving process of the isolation feature is not considered. Figure, Isolation feature refers to 200418087 V. Description of the invention (2) There is only a single feature pattern in a specific area, and the width of the feature is the smallest line width. Please refer to Figure 1A, there is a thin film layer on the substrate 1 丨〇 1 20, the characteristic photoresist 131 is located on the thin film layer 120 to pattern the thin film layer 120, and the width of the characteristic photoresist 1 3 1 is the minimum line width. The etching process of the structure in FIG. 丨 A will obtain the first Figure B, the minimum line width of the feature film 丨 2 1 will be greater than the minimum line width of the feature photoresist 1 31. Figure 2 A-2B is a schematic illustration of the etching process of dense features. Dense features refer to the presence of complex numbers in a specific area. A pattern of several features, the width of these features are the minimum line width. Please refer to the second figure, the substrate no has a thin film layer 120, and the characteristic photoresist 132, 133, 134, 135, and 136 are located in the thin film layer 120 ^

上，用以圖形化薄膜層12〇，特徵光阻132、133、134、135 與136的寬度皆為最小線寬。將第2八圖的結構進行餘刻製程，會付到特徵薄膜122a、123、1 24、125與126a，如第2B 圖所示。光阻133、·Μ4 溥膜/ 23、124與125的最小線寬則與特徵 126 ^ I ^ ^ 5的最小線寬相同，但是特徵薄膜122&與 :::i卻會大於特徵光阻1 32與136的最小線寬。負載效應。這是因為特線寬明顯變大就是輪庵微由上述例子可知，同一晶片成特徵的最小線寬不均勻，卻缺少-膜：薄膜l22am26a的其中-侧同會影響蚀刻製程的效果兩、、且特徵薄膜所處的周邊環境不上’特徵周邊環境的不同會造使得隔離特徵與密集特徵中的 200418087 五、發明說明（3) 邊緣特徵之最小線寬變寬，無法達到製程所需。若一晶片上的最小線寬不均勻，會使得某些線路訊號傳遞：曰，曰另外一些則較慢，造成訊號傳輸速率的偏差，、運算時產生錯誤，姐且降低晶片運算的效能，易使-片發明内容 =發明的目的就是在提供一種最小線寬不均句性的改 : 用以減少曝光與蝕刻製程時因造成最小線寬不均句的情形。乃逯不同所 ϊίί發：Ϊ上述目的’提出一種最小線寬不均勻性的改 i '缺後特，阻之兩侧各加上一組偽特徵光阻需特徵ίίϋ 此時被钱刻的薄膜上會存在所後，覆蓋上二==阻群兩者所定義的特徵薄膜。而需特徵薄膜，▲後：‘第利定^保護光阻以保護所境影響的特徵薄i 钮刻’即可得到不受周邊環 =本發明一較佳實施例，各組偽偽特徵来阻。甘山w 门订试7t丨丑辟包含至少一 ^ 八中偽特徵光阻群鱼所靈轉料本un wa 離為所需特徵光阻之線寬 1二所：特徵先阻之間隔距為複數個時，#鄰的二J:。备偽特徵光阻之數目阻之線寬的1至3倍。‘ 之間隔距離為所需特徵光依照本發明一較佳杂# y丨程時，薄膜層之材^盔：應用的蝕刻製程為濕蝕刻製依照本發明另一較I寄、氧化矽、氮化矽或金屬。 &歹’所應用的蚀刻製程為乾蝕刻 200418087 五、發明說明（4) 製程時，薄膜層之材質為介電材質 … 二u金屬。本較佳實施例在薄膜：二工“夕、氧 =罩層’硬填罩層的材質為氮化石/、、=:存在-層石反或氮化碳。乳鼠化石夕、非結晶依照本發明之又一鮫祛夸以用於光罩的製作，以改善在光軍法亦可 ::製作光罩時所應用的薄膜層之材ίίΓ::;化其根據本發明之目的，提出一種光罩組合。一光罩係定義第一光阻層於薄膜層之:，以形中的第需特徵薄膜以及複數個偽特徵薄膜群，〔^至少一所二光阻層於該所需特徵薄膜之上，; 係定義第膜。以保遵該所需特徵薄依照本發明一較佳實施例，偽特徵薄膜群分 :薄J之兩外㈣，各偽特徵薄膜群包含至特=特特徵薄膜之線寬的〗至3倍。當= 需的心心4膜之間搞距離為所需特徵薄膜之線寬 ^發明可使同一晶片上的特徵之最小線寬均自不 J境的影響。目此同一晶片上各線路訊二邊遞速率的偏I降低晶片運算的錯誤率，效能。而且本發明可應用的範圍廣泛，不 ^ χ $疋心、蝕刻皆可應用本發明來提高最小線寬的岣 200418087 五、發明說明（5) 勻性實施方式 =了改σ %知特彳政周邊環境不同所造成的最小線寬不均勻 +之問題，本發明提出-種最小線寬不均勻性的改善方法。本毛明係在利用光阻定義所需特徵時，在所需特徵的光阻 —兩側各加上一組偽特徵^ 光阻群，然後進 ^第一次蝕刻，此時被蝕刻的薄膜上會存在所需特徵光阻偽特徵光阻群兩者所定義的特徵薄膜。而後，覆蓋上一層光阻層，利用光罩定義保護光阻以保護所需特徵薄膜，然後進行第二次蝕刻。此時被蝕刻的薄膜層上只會存在所需特徵薄膜以及保護光阻，再將其上覆蓋的保護^阻去除之後，即可得到不受周邊環境影響的特徵薄膜。請參照第3A-3C圖，其繪示依照本發明一較佳實施例的示咅圖二第3A-3C與第ΙΑ-1B圖相同，皆為隔離特徵的蝕刻過程之不意圖。請參照第3A圖，基板11〇上具有薄膜層12〇，徵光阻131位於薄膜層120之上，用以圖形化薄膜層12〇，徵光阻131的寬度為最小線寬。、" ’特本發明在特徵光阻1 31之兩側分別加上一組偽特徵光阻 2 02，各組偽特徵光阻群202包含複數個偽特徵光阻，特徵光阻之線寬與特徵光阻之線寬皆利用光學近似修正偽 (optical proximity correction, 0PC)方法來終正偽特徵光阻之線寬與特徵光阻之線寬相同，皆么二I ’使白马最小之線 200418087Above, for patterning the thin film layer 120, the widths of the characteristic photoresists 132, 133, 134, 135, and 136 are the minimum line widths. After the structure of Fig. 28 is subjected to a post-cut process, the feature films 122a, 123, 124, 125, and 126a are applied, as shown in Fig. 2B. The minimum line width of photoresist 133, · M4 溥 film / 23, 124, and 125 is the same as the minimum line width of feature 126 ^ I ^ ^ 5, but feature film 122 & and ::: i are larger than feature photoresist 1 32 and 136 minimum line width. Load effect. This is because the special line width is significantly larger. It is known from the above example that the minimum line width characteristic of the same wafer is not uniform, but it is lacking.-Film: The film-222am26a in which the-side will affect the effect of the etching process. And the surrounding environment where the feature film is located is not the same. The difference in the surrounding environment of the feature film will make 200418087 in the isolation feature and dense feature. V. Description of the invention (3) The minimum line width of the edge feature is widened and cannot meet the process requirements. If the minimum line width on a chip is non-uniform, some line signals will be transmitted: that is, others are slower, causing deviations in signal transmission rates, errors in operation, and reducing the performance of chip operations. The purpose of the invention is to provide a minimal line-width uneven sentence modification: to reduce the occurrence of the smallest line-width uneven sentence during the exposure and etching processes. What ’s different is that: 目的 The above purpose 'propose a modification of the smallest line width non-uniformity' lack of special features, each side of the resistance plus a set of pseudo-characteristic photoresistance characteristics ϋ After the existence of the above, cover the feature film defined by the two == resistance groups. A feature film is needed, ▲: "Diridin ^ Protecting the photoresist to protect the characteristics of the influence of the thin i button engraved" can be obtained from the surrounding ring = a preferred embodiment of the present invention, each group of pseudo-feature features come Resistance. Ganshan w door order test 7t 丨 ugly contains at least one ^ eight pseudo-feature photoresistance group of fish reel material un wa away from the required feature photoresistance line width 1 2nd: the interval of feature first resistance is In the plural, # 2 的二 J :. Number of pseudo-feature photoresistors 1 to 3 times the line width of the resist. 'The separation distance is the required characteristic light according to the present invention, a preferred hybrid # y 丨 process, the material of the thin film layer ^ helmet: the applied etching process is wet etching according to the present invention, silicon oxide, nitrogen Silicon or metal. & 歹 ’The applied etching process is dry etching. 200418087 V. Description of the Invention (4) During the manufacturing process, the material of the thin film layer is a dielectric material. In this preferred embodiment, the material of the thin film: "Xi, oxygen = overlay ', and the material of the hard overfill is nitride / ,, =: presence-layer inversion, or carbon nitride. Baby rat fossil, non-crystalline according to Another aspect of the present invention is used for making a photomask to improve the material of the thin film layer used in the photomilitary method :: making a photomask. According to the purpose of the present invention, a method is provided. Photomask combination A photomask defines the first photoresist layer on the thin film layer: with the first required feature film in the shape and a plurality of pseudo-feature film groups, [^ at least one second photoresist layer on the required feature The film is defined as the first film. In order to ensure compliance with the required characteristics, according to a preferred embodiment of the present invention, the pseudo-feature film group is divided into two outer layers of the thin J, and each pseudo-feature film group includes the special feature. The line width of the feature film is 3 times. When = the required distance between the 4 films is the line width of the required feature film. ^ The invention allows the smallest line width of features on the same wafer to be affected by the environment. Therefore, the partial I of the two-side transmission rate of each line on the same chip reduces the error rate and performance of the chip operation. Moreover, the present invention has a wide range of applications. The invention can be used to increase the minimum line width without applying ^ χ $ 疋. 五 200418087 V. Description of the invention (5) Uniform implementation = σ% The problem of minimum line width non-uniformity + caused by different surrounding environments, the present invention proposes a method for improving the minimum line width non-uniformity. This Maoming system uses the photoresist to define the required characteristics. Resistor—Add a set of dummy features on each side of the photoresist group, and then etch for the first time. At this time, there will be a feature film defined by both the desired feature photoresist and the pseudo-resistance photoresist group on the etched film. Then, cover a photoresist layer, use a photomask to define the protective photoresist to protect the required feature film, and then perform the second etching. At this time, only the required feature film and protective photoresist will exist on the etched film layer. After removing the protective barriers thereon, a characteristic film that is not affected by the surrounding environment can be obtained. Please refer to FIGS. 3A-3C, which shows a diagram according to a preferred embodiment of the present invention. 3A-3C and IA-1B It is the intention of the etching process of the isolation feature. Please refer to FIG. 3A. The substrate 11 has a thin film layer 120. The photoresist 131 is located on the thin film layer 120 to pattern the thin film layer 120. The width of the resistor 131 is the minimum line width. "&Quot; The present invention adds a set of pseudo-feature photoresistors 2 02 on both sides of the feature photo-resistor 1 31, and each group of the pseudo-feature photoresist group 202 includes a plurality of pseudo-features. Photoresistance, line width of characteristic photoresistance and line width of characteristic photoresistance are all corrected by optical proximity correction (0PC) method to correct the line width of pseudo characteristic photoresistance and line width of characteristic photoresistance. Mod II I 'Minimum White Horse 200418087

此外’偽特徵光阻群2〇2與特徵光阻丨31之間格距離，以及，特徵光阻群2Q2中各偽特徵光阻之間的間格距離，皆視製程規格而定。在此實施例中，偽特徵光阻群2〇2與特徵光阻 131之間格距離為特徵光阻131之線寬的1至3倍，各相鄰的偽特徵光阻之間隔距離亦為特徵光阻131之線寬的1至3倍。將第3 A圖的結構進行钱刻製程，會得到第μ圖，如第π圖所示’特徵光阻131會圖形化出特徵薄膜丨2ia，而偽特徵光阻群202則圖形化出偽特徵薄膜2丨2與214。而後，再利用钱刻製程將偽特徵薄膜2 1 2與21 4除去，則可以得到單一的特Λ 欲薄膜121a’如第3C圖所示。與第1B圖比較，利用本發明之方法所得到的特徵薄膜 121a，其最小線寬與特徵光阻131的最小線寬相同，不再有第1B圖中特徵薄膜丨21之輪廓微負載效應的問題。承受輪廓微負載效應影響而被變寬的偽特徵薄膜214，則利用餘^製程與偽特徵薄膜212 —起去除，只留下原本所需的特徵薄膜 121a。、請參照第4A-4C圖，其繪示依照本發明一較佳實施例的示意圖。第4A-4C與第2A - 2B圖相同，皆為密集特徵的蝕刻過程^纖之示意圖。請參照第4A圖，基板110上具有薄膜層12〇，特· 徵光阻132、133、134、135與136位於薄膜層12〇之上，用以圖形化薄膜層120，特徵光阻132、133、134、135與136 的寬度皆為最小線寬。 ^ 本發明在特徵光阻132與136之外侧分別加上一組偽特徵光In addition, the grid distance between the pseudo-feature photoresist group 2002 and the feature photoresist 31, and the grid distance between each of the pseudo-feature photoresist groups in the feature photoresist group 2Q2 depends on the process specifications. In this embodiment, the grid distance between the pseudo-characteristic photoresist group 202 and the characteristic photoresistor 131 is 1 to 3 times the line width of the characteristic photoresistor 131, and the distance between each adjacent pseudo-characteristic photoresistor is also The line width of the characteristic photoresist 131 is 1 to 3 times. If the structure of Fig. 3 A is subjected to a money engraving process, it will obtain the picture μ. As shown in Fig. Π, the 'feature photoresist 131 will pattern the feature film 丨 2ia, and the pseudo feature photoresist group 202 will pattern the pseudo Feature films 2 丨 2 and 214. Then, the pseudo-feature films 2 1 2 and 21 4 are removed by the money-engraving process, and a single special thin film 121a 'can be obtained as shown in FIG. 3C. Compared with FIG. 1B, the minimum line width of the characteristic film 121a obtained by the method of the present invention is the same as the minimum line width of the characteristic photoresist 131, and there is no longer the micro-load effect of the contour of the characteristic film in FIG. 1B. problem. The pseudo-feature film 214 that has been widened under the influence of the contour micro-loading effect is removed by using the residual process and the pseudo-feature film 212, leaving only the feature film 121a originally required. Please refer to FIGS. 4A-4C, which are schematic diagrams according to a preferred embodiment of the present invention. Figures 4A-4C are the same as Figures 2A-2B, which are schematic diagrams of the etching process of dense features. Please refer to FIG. 4A. The substrate 110 has a thin film layer 120. The photoresist 132, 133, 134, 135, and 136 are located on the thin film layer 120, for patterning the thin film layer 120. The characteristic photoresist 132, The widths of 133, 134, 135, and 136 are the minimum line widths. ^ The present invention adds a set of pseudo characteristic light to the outside of the characteristic photoresist 132 and 136 respectively

第10頁 200418087 五、發明說明（7) 阻群2 0 2 ’各組偽特徵光阻群2 0 2包含複數個偽特徵光阻。各偽特徵光阻之線寬與特徵光阻之線寬皆利用光學近似修正（optical proximity correction，0PC)方法來修正使偽特徵光阻之線寬與特徵光阻之線寬相同，皆為最小之線寬值。此外，偽特徵光阻群202與特徵光阻132，偽特徵光阻群2〇2 與特徵光阻1 3 6之間格距離，以及偽特徵光阻群2 〇 2中各偽特徵光阻之間的間格距離，皆視製程規格而定。在此實施例中，偽特徵光阻群202與特徵光阻132之間格距離以及偽特徵光阻群202與特徵光阻136之間格距離，皆為特徵光阻< 1 3 2之線寬的1至3倍，而各相鄰的偽特徵光阻之間隔距離亦為特徵光阻132之線寬的1至3倍。將第4A圖的結構進行蝕刻製程，會得到第4B圖，如第4β圖所示，特徵光阻132、133、134、135與136會分別圖形化特徵薄膜122b、123、124、125與126b，而偽特徵光阻 2 02則圖形化出偽特徵薄膜2 12與214。而後，再利用餘程將偽特徵薄膜2 1 2與2 1 4除去，則可以得到所需的 / · 膜 122b、123、124、125 與 126b，如第 4C 圖所示。 ^ 與第2 B圖比較，利用本發明之方法所得到的特徵與126b，其最小線寬與光阻132與13M目同，不再有^ ^ 中特徵薄膜122與126之輪廓微負載效應的問題。為圖微負載效應影響而被變寬的偽特徵薄膜2 i 4，則7又兩靡程與偽特徵薄膜212 —起去除，只留下原本所需=蝕刻製 122b、123、124、125 與 126b。的特徵薄膜 200418087Page 10 200418087 V. Description of the invention (7) Resistance group 2 0 2 ′ Each group of pseudo-feature photoresist groups 2 0 2 includes a plurality of pseudo-feature photoresists. The line width of each pseudo-characteristic photoresistor and the line width of the characteristic photoresistor are corrected by using optical proximity correction (0PC) method so that the linewidth of the pseudo-characteristic photoresistance and the linewidth of the characteristic photoresistance are the same, which are the smallest. The line width value. In addition, the pseudo characteristic photoresist group 202 and the characteristic photoresist 132, the grid distance between the pseudo characteristic photoresist group 202 and the characteristic photoresist 1 36, and each of the pseudo characteristic photoresist in the pseudo characteristic photoresist group 2 02 The distance between cells depends on the process specifications. In this embodiment, the grid distance between the pseudo-characteristic photoresist group 202 and the feature photoresistor 132 and the grid distance between the pseudo-characteristic photoresist group 202 and the feature photoresistor 136 are the lines of the feature photoresist <1 3 2 The width is 1 to 3 times, and the distance between each adjacent pseudo characteristic photoresist is also 1 to 3 times the line width of the characteristic photoresist 132. The structure of FIG. 4A is subjected to an etching process to obtain FIG. 4B. As shown in FIG. 4β, the characteristic photoresists 132, 133, 134, 135, and 136 will pattern the feature films 122b, 123, 124, 125, and 126b, respectively. , And the pseudo-feature photoresist 2 02 patterned the pseudo-feature films 2 12 and 214. Then, the pseudo-feature thin films 2 1 2 and 2 1 4 are removed by using the residual process, and the desired / · films 122b, 123, 124, 125, and 126b can be obtained, as shown in FIG. 4C. ^ Compared with Fig. 2B, using the method of the present invention to obtain the features and 126b, the minimum line width is the same as the photoresist 132 and 13M mesh, and there is no longer the micro-load effect of the contours of the feature films 122 and 126 in ^ ^ problem. The pseudo-feature film 2 i 4 that is widened for the effect of the micro-loading effect, and 7 is removed with the pseudo-feature film 212 together, leaving only the original required = etching system 122b, 123, 124, 125 and 126b. Feature film 200418087

五、發明說明（8) 以上兩個實施例中所應用的蝕刻製程至少包含濕钱刻與乾賓虫刻，這兩種钱刻方式皆可應用本發明之方法來減少_廊微負載效應對最小線寬的影響。以下會各舉一實施例^ ^ 明本發明在濕蝕刻與乾蝕刻上的應用。 ° 請參照第5A-5F圖，其繪示在濕蝕刻製程中應用本發明之一較佳實施例的示意圖。請參照第5 A圖，基板11 〇上具有薄膜層120，特徵光阻511與512位於薄膜層120之上，用/以圖开/ 化薄膜層120，特徵光阻5 11與512的寬度皆為最小線寬\ /鹿用濕蝕刻的薄膜層1 2 0之材質至少包含矽、氧化石夕、氮化石^ 與金屬。本發明在特徵光阻511與5 1 2之外側分別加上一組< 偽特徵光阻群502，各組偽特徵光阻群5〇2包含複數個偽特徵光阻，各偽特徵光阻皆具有最小線寬，而各偽特徵光阻之間隔距離則視製程規格而定。將第5A圖的結構進行濕蝕刻製程，會得到第5b圖，如第5β 圖所示，特徵光阻5 11與512分別圖形化出特徵薄膜521與 522，而偽特徵光阻群502則圖形化出偽特徵薄膜51'4與/、 516。而後，在特徵薄膜521、522以及偽特徵薄膜514、、516 之上覆蓋一層光阻層530，如第5C圖所示。接著，利用光罩選取保護光阻534 ’此保護光阻534覆蓋包圍所需的特徵膜521與522，在此利用保護光阻534保護特徵薄膜521與屬 522，以阻隔之後濕蝕刻製程對特徵薄膜521與522的侵蝕。V. Description of the invention (8) The etching process applied in the above two embodiments at least includes wet money engraving and dry guest engraving. Both of these money engraving methods can be applied with the method of the present invention to reduce _ Langwei load effect on The effect of minimum line width. Each of the following examples will be used to illustrate the application of the present invention to wet etching and dry etching. ° Please refer to Figures 5A-5F, which shows a schematic diagram of applying one of the preferred embodiments of the present invention in a wet etching process. Please refer to FIG. 5A. The substrate 110 has a thin film layer 120, and the characteristic photoresistors 511 and 512 are located on the thin film layer 120. The thin film layer 120 is formed with / illustrated. The widths of the characteristic photoresistors 5 11 and 512 are both It is the minimum line width. The material of the wet-etched thin film layer 120 includes at least silicon, oxidized stone, nitrided metal, and metal. In the present invention, a group of < pseudo-feature photoresist groups 502 are added to the outside of the characteristic photoresist 511 and 5 1 2 respectively. Each group of the pseudo-feature photoresist group 502 includes a plurality of pseudo-feature photoresistors, each of which is All have a minimum line width, and the distance between each pseudo-feature photoresist depends on the process specifications. The structure of FIG. 5A is subjected to a wet etching process to obtain FIG. 5b. As shown in FIG. 5β, the characteristic photoresists 5 11 and 512 pattern the characteristic films 521 and 522, respectively, and the pseudo characteristic photoresist group 502 is patterned. The pseudo feature films 51'4 and / or 516 are formed. Then, a photoresist layer 530 is covered on the feature films 521, 522 and the dummy feature films 514, 516, as shown in FIG. 5C. Next, use a photomask to select a protective photoresist 534. This protective photoresist 534 covers the feature films 521 and 522 required for enveloping. Here, the protective photoresist 534 is used to protect the feature films 521 and 522 to block the features after the wet etching process. Erosion of the films 521 and 522.

St二經Πΐ顯影的步驟後，將不需要的偽特徵薄膜 14 〃 516稞路出來，如第5D圖所示。然後進行第二次的濕蝕刻步驟’去除不需要的偽特徵薄膜514與516，且保留所After the second step of developing by Πΐ, the undesired pseudo-feature film 14〃 516 稞 is routed out, as shown in FIG. 5D. Then, a second wet etching step is performed to remove unnecessary dummy feature films 514 and 516 and retain all

第12頁 200418087 五、發明說明（9) ' ' 而的特徵薄膜521與522，得到如第5E圖的結果。最後，去除特彳政薄膜5 2 1與5 2 2上覆蓋的保護光阻5 3 4，即可得到所需的特徵薄膜52 1與522，如第5F圖所示。請參照第6A-6F圖，其繪示在乾蝕刻製程中應用本發明之一較佳實施例的示意圖。請參照第6A圖，基板丨丨〇上具有多晶夕層610 ’夕曰曰石夕薄膜層上具有硬遮罩（har(j mask)層620，而特徵光阻6 32位於硬遮罩層620之上，特徵光阻6 32的寬度為最小線寬。應用乾蝕刻的薄膜層之材質除多晶矽外，還有介電材質、單晶矽、氧化矽或金屬等，而硬遮罩層的材質則為氮化矽、氧氮化矽、非結晶碳或氮化碳等。本發明_ 在特彳玫光阻6 3 2之外侧分別加上一組偽特徵光阻群6 3 4，各 2偽特徵光阻群634包含複數個偽特徵光阻，各偽特徵光阻皆具有最小線寬，而各偽特徵光阻之間隔距離則視製程規格而定。將第6 A圖的結構進行硬遮罩的餘刻製程，會得到第6 b圖，如第6B圖所示，特徵光阻632圖形化出硬遮罩特徵622，而偽特徵光阻群634則圖形化出偽硬遮罩特徵62“與6241)。而 f ’在硬遮罩特徵622以及偽硬遮罩特徵624a與624b之上覆，、層光阻層630，如第6C圖所示。接著，利用光罩選取保儀卜濩光阻63 6，此保護光阻636覆蓋包圍所需的硬遮罩特徵 622 ’利用保護光阻636保護硬遮罩特徵622，以阻隔後續的硬遮罩餘刻製程對硬遮罩特徵6 2 2的侵蝕。 ^後’再經過曝光顯影的步驟後，將不需要的偽硬遮罩特徵62 4a與624b裸露出來，如第6D圖所示。然後進行硬遮罩Page 12 200418087 V. Description of the invention (9) The characteristic thin films 521 and 522 are obtained as shown in FIG. 5E. Finally, remove the protective photoresist 5 3 4 over the special administrative films 5 2 1 and 5 2 2 to obtain the required characteristic films 52 1 and 522, as shown in Figure 5F. Please refer to FIGS. 6A-6F, which are schematic diagrams of applying a preferred embodiment of the present invention in a dry etching process. Please refer to FIG. 6A, the substrate has a polycrystalline layer 610 on the substrate, and a hard mask (har (j mask) layer 620 is provided on the film layer of Shi Xi, and the characteristic photoresist 6 32 is located on the hard mask layer. Above 620, the width of the characteristic photoresist 6 32 is the minimum line width. In addition to polycrystalline silicon, the material of the dry-etched thin film layer is also made of dielectric material, monocrystalline silicon, silicon oxide or metal, and the hard mask layer The material is silicon nitride, silicon oxynitride, amorphous carbon or carbon nitride, etc. The present invention _ adds a set of pseudo-characteristic photoresist groups 6 3 4 to the outside of the special photoresist 6 3 2, each 2 Pseudo-feature photoresist group 634 includes a plurality of pseudo-feature photoresistors, each of which has a minimum line width, and the distance between each pseudo-feature photoresistor depends on the process specifications. Perform the structure of Figure 6 A In the remaining process of the hard mask, FIG. 6b is obtained. As shown in FIG. 6B, the characteristic photoresist 632 is patterned into a hard mask feature 622, and the pseudo characteristic photoresist group 634 is patterned into a pseudo hard mask. Feature 62 "and 6241). And f 'is overlying the hard mask feature 622 and the pseudo hard mask features 624a and 624b, and a photoresist layer 630, as in As shown in Figure 6C. Next, use a photomask to select Baoyi Bud Photoresist 63 6. This protective photoresist 636 covers the hard mask feature 622 required for enveloping. ′ Use the protective photoresist 636 to protect the hard mask feature 622 to block subsequent ones. Erosion of the hard mask feature 6 2 2 by the hard mask process. After the exposure and development step, the unwanted pseudo hard mask features 62 4a and 624b are exposed, as shown in FIG. 6D. ... then apply a hard mask

200418087200418087

五、發明說明（10) 程’去除不需要的偽硬遮罩特徵62 m的；遮罩特徵622 ’再經過去除保護光嶋的步V. Description of the invention (10) Process ‘remove unwanted pseudo-hard mask features 62 m; mask feature 622’ then go through the step of removing protection light

:麻：：如第6E圖的結果。而後’進行乾蝕刻的步驟，利用硬遮罩特徵622選取餘刻多晶石夕層61Q 罩的姓刻製程去除硬遮罩特徵622 曼再和用硬2 舰2, M6F圖所示。㈣622即可㈣所需的特徵薄在以上四個實施例中，一組偽的偽特徵光阻，然而，偽特徵數量應視製程規格所規定特徵間與製程技術而定。一般而言加上越多的偽特徵光阻，可減此外，以上四個實施例中所使而’本發明亦可使用負光阻來果0 特徵光阻群内含有兩個以上光阻群内含的偽特徵光阻之間的間隔、區域可利用的空 ’若在所需的特徵光阻兩側丨少越多的輪廓微負載效應。用的光阻都是正光阻，然實施，亦可以達到同樣的效: 麻 :: As shown in Figure 6E. Then, a dry etching step is performed, and the hard mask feature 622 is used to select the remaining polycrystalline stone layer 61Q mask. The hard mask feature 622 is removed and the hard mask 2 and M6F are shown in the figure. ㈣622 can be used. The required feature is thin. In the above four embodiments, a set of pseudo-feature photoresistors. However, the number of pseudo-features should be determined by the feature interval and process technology specified in the process specification. Generally speaking, the more pseudo-characteristic photoresistors are added, it can be reduced. In addition, in the above four embodiments, the present invention can also use a negative photoresistor. The characteristic photoresistor group contains more than two photoresistor groups. The space between the pseudo-feature photoresistors and the space available in the area will reduce the contour micro-loading effect if there are less sides of the required feature photoresist. The photoresist used is a positive photoresist, but the same effect can be achieved by implementation.

由以上實施例可知，本發明之方法也應用在光罩組合上，利用各階段不同光罩遮檔區域的不同來實施本發明之方 :。第7A-7C圖為本發明應用纟第3A_3C圖之較佳實施例所使用的光罩組合’ jt實施例中的蝕刻製程係使用正光阻來作為光阻材料。以下以第7A_7C圖的光罩組合配合第3a_3c 圖的蝕刻過程來說明本發明之方法。 =:A圖二示田.第一組光罩71 〇具有戶斤需特徵702與偽特群7 04先使用第一組光罩710曝光光阻層，使光阻層的徵光阻1 3 1之兩侧多加上偽特徵光阻群2 〇 2，如第3人圖所示，然後進行第一次蝕刻製程。第一次蝕刻製程完成後 200418087 五、發明說明（11) 二層Γ且層，然後利用第7B圖中的第二組光罩Wa &取第3B圖中所需特徵薄膜121a之上的光阻 U使，徵薄膜212與214之上的光阻被曝光顯影：再盯一。人钱刻裝程，去除不需要的偽特徵薄膜212與 2/4。然後進行去光阻的步驟，即可得到第％圖之所需的特徵薄膜1 21 a。此時所使用的第二組光罩除了如第7B圖所示的光罩72〇3之外亦可使用如第圖所示的光罩72〇b。第7B圖中的光罩 720a係利用遮擋區域712來保護第⑽圖中所需特徵薄膜i2u 之上的光阻，其餘的部分皆不予遮擋，而第圖中的光罩· 720b則是利用曝光區域714將偽特徵薄膜212與214之上的光阻曝光以便利用蚀刻製程來移除。此外，以上所述之本發明之製程方法與結構，亦可應用於光罩的製作中。應用本發明之製程方法與結構，可得到一具有均勻的最小線寬之光罩。在此製造光罩所應用的製程方法可為濕触刻或乾餘刻製程，其中此光罩所應用的薄膜層材質為鉬、鉻或矽化鉻等。由上述本發明較佳實施例可知，應用本發明具有下列優點。本發明可使同一晶片上的特徵之最小線寬均勻，不受馨| 周邊環境的影響。因此同一晶片上各線路訊號傳遞的速度一致，避免訊號傳遞速率的偏差，降低晶片運算的錯誤率’提高晶片運算的效能。本發明所應用的方法與設備皆為一般半導體製程中所常用的方法與設備，可輕易地實施在目前的半導體製程中。而且本發明可應用的範圍廣泛，It can be known from the above embodiments that the method of the present invention is also applied to the combination of photomasks, and the method of the present invention is implemented by using different photomask blocking areas at different stages. Figures 7A-7C are photomask combinations used in the preferred embodiment of Figures 3A-3C of the present invention. The etching process in the jt embodiment uses a positive photoresist as the photoresist material. The method of the present invention will be described below with the photomask combination of FIGS. 7A-7C and the etching process of FIGS. 3a-3c. =: A Figure II shows the field. The first group of photomasks 71 〇 has household characteristics 702 and the pseudo-special group 7 04 first uses the first group of photomasks 710 to expose the photoresist layer, so that the photoresist layer has a photoresistance of 1 3 Pseudo-feature photoresist groups 2 02 are added to both sides of 1 as shown in the third figure, and then the first etching process is performed. After the first etching process is completed, 200418087 V. Description of the invention (11) Two layers of Γ and layer, and then use the second group of masks Wa & in Figure 7B to take the light on the feature film 121a required in Figure 3B The resistance U causes the photoresist on the thin films 212 and 214 to be exposed and developed: stare again. The process is engraved with human money to remove the unwanted feature film 212 and 2/4. Then, the photoresist removal step is performed to obtain the required characteristic film 1 21 a of the% chart. The second group of photomasks used at this time can be used in addition to the photomask 7230 shown in FIG. 7B. The photomask 720a in FIG. 7B uses the shielding area 712 to protect the photoresist on the required feature film i2u in the first image, and the rest is not blocked. The photomask 720b in the photo is used The exposed area 714 exposes the photoresist on the dummy feature films 212 and 214 to be removed by an etching process. In addition, the process method and structure of the present invention described above can also be applied to the manufacture of photomasks. By applying the manufacturing method and structure of the present invention, a photomask having a uniform minimum line width can be obtained. The manufacturing method used for manufacturing the photomask here can be wet-touch or dry-etching. The film layer used in this photomask is made of molybdenum, chromium, or chromium silicide. As can be seen from the above-mentioned preferred embodiments of the present invention, the application of the present invention has the following advantages. The invention can make the minimum line width of the features on the same wafer uniform, and it is not affected by the surrounding environment. Therefore, the signal transmission speed of each line on the same chip is the same, which avoids the deviation of the signal transmission rate, reduces the error rate of the chip operation, and improves the performance of the chip operation. The methods and equipment used in the present invention are all methods and equipment commonly used in general semiconductor processes, and can be easily implemented in current semiconductor processes. Moreover, the scope of application of the present invention is wide,

第15頁 200418087 五、發明說明（12) 不論乾蝕刻或是濕蝕刻皆可應用本發明來提高最小線寬的均勻性。雖然本發明已Μ —較佳實施例揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍内，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Page 15 200418087 V. Description of the invention (12) The present invention can be applied to improve the uniformity of the minimum line width regardless of dry etching or wet etching. Although the present invention has been disclosed in the above-mentioned preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and decorations without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application.

第16頁 200418087Page 16 200418087

為讓本發明之上述和其他目懂，下文特舉一較佳實施明如下：的、特徵、和優點能更明顯易 ’並配合所附圖式，作詳細說特徵㈣刻過程之示意圖。。二刻過程之示意圖。佳實施例的'示意圖/明似用在隔離特徵的蝕刻過程之一較 ί 4=Γ::意示圖本發明應用在密集特徵的蝕刻過程之-良 S意5F:。係綠示本發明應用在濕餘刻過程之-較佳… :‘】F圖圖係繪不本發明應用在乾蝕刻過程之-較佳實施例 ί ΐ-。70圖係繪示本發明應用在第3A_3c圖之光罩組合的示圖式標記說明 110 :基板 12 〇 :薄膜層 121 、 121a 、 122a 、 122b 、 123 、 124 、 125 、 126a 、 I2fib 特徵薄膜 131、132、133、134、135、136 :特徵光阻 202 :偽特徵光阻群In order to make the above and other objects of the present invention comprehensible, a preferred embodiment is exemplified as follows: The features, features, and advantages can be more clearly and easily described, and in conjunction with the accompanying drawings, a schematic diagram of the feature engraving process is described in detail. . Schematic representation of the two-minute process. One of the schematic diagrams of the preferred embodiment is apparently one of the etching processes used to isolate features. 4 = Γ :: Indicative view The present invention is applied to dense feature etching processes-good S5F :. The green color shows that the present invention is preferably applied in the wet after-etching process:: ′] The F diagram is a drawing-the preferred embodiment of the present invention applied in the dry etching process. Figure 70 is a diagrammatic illustration of the present invention applied to the mask combination of Figures 3A-3c. 110: substrate 12: film layer 121, 121a, 122a, 122b, 123, 124, 125, 126a, I2fib characteristic film 131 , 132, 133, 134, 135, 136: Characteristic photoresistor 202: Pseudo-characteristic photoresistor group

200418087 圖式簡單說明 212、 214 ：偽特徵薄膜 502 偽特徵光阻群 511、 512 特像光阻 514、 516 偽特徵薄膜 521、 522 特徵薄膜 530 光阻層 534 保護光阻 610 多晶矽層 620 硬遮罩層 622 硬遮罩特徵 624a 、624b :偽硬遮罩特徵 630 光阻層 632 特徵光阻 634 偽特徵光阻群 636 保護光阻 710，、720a 、720b :第一組光 702 所需特徵 704 偽特徵群 712 遮擋區域 714 曝光區域200418087 Brief description of the drawings 212, 214: Pseudo-feature film 502 Pseudo-feature photoresist group 511, 512 Special photoresistor 514, 516 Pseudo-feature film 521, 522 Feature film 530 Photoresist layer 534 Protect photoresistor 610 Polycrystalline silicon layer 620 Hard cover Mask layer 622 Hard mask feature 624a, 624b: pseudo hard mask feature 630 photoresist layer 632 feature photoresist 634 pseudo feature photoresist group 636 protection photoresist 710, 720a, 720b: first group of light 702 required feature 704 Pseudo-feature group 712 occlusion area 714 exposure area

第18頁Page 18

Claims

200418087 六、申請專利範圍 1. 一種最小線寬不均勻性的改善方法，續一特徵光阻群在一薄模層上定義具有一最小線\^^1 利用薄膜群，該㈣光阻群包含至少—特不均勻性的改善方法至少包含以下步驟：亥取小線寬在該特徵光阻群的兩外側各形成一偽特徵光阻餘刻该薄膜層，在該特徵光阻群下方 :及在該些偽特徵光阻群下方分別群覆蓋一保護層於該特徵薄膜群之上，該保護声些偽特徵薄膜群之上； θ不覆盍於該蝕刻該些偽特徵薄膜群；以及去除該保護層。 2士如申請專利範圍第1項所述之最小線寬不均方法，其中該偽特徵光阻群與該特徵光阻群之間拓: 該特徵光阻之線寬的1至3倍。距離為 3古如申請專利範圍第！項所述之最小線 :法’其中每-該些偽特徵光阻群包含至少==善 4古如申請專利範圍第3項所述之最小線寬不均 2特特徵光阻之數目為複數個時：該Ϊ“ ‘、、、，"先P之間隔距離為該特徵光阻之線寬的i至3倍。第19頁 200418087 六、申請專利範圍 ""~ 5·如申請專利範圍第3項所述之最小線寬不均勻性的改善方法，其中該#徵光阻與該偽特徵光阻之線寬係利用光^ 近似修正方法修正，使該偽特徵光阻之線寬與該特徵光= 之線寬相同。 6·如申請專利範圍第1項所述之最小線寬不均勻性的改盖方法，其中該保護層的材質至少包含光阻。 ° 7方如申請專利範圍第i項所述之最小線寬不均句性的改盖< 力法，其中該薄膜層的材質至少包含矽。 ° 8·如申請專利範圍第1項所述之最小線寬不均句槌的对Μ 方法，其中該薄膜層的材質至少包含氧化矽。、° 9·、如申請專利範圍第1項所述之最小線寬不均勻性的改善方法’其中該薄膜層的材質至少包含氮化矽。 " 10·、如申請專利範圍第1項所述之最小線寬不岣勻性的改呈方法’其中該薄膜層的材質至少包含金屬。 "丨 11 ·如申請專利範圍第1項所述之最小線寬不岣勻性的改蓋方法，其中該薄膜層的材質至少包含鉬。 °200418087 VI. Scope of patent application 1. A method for improving the minimum line width non-uniformity, a characteristic photoresist group is defined on a thin mold layer with a minimum line \ ^^ 1 Using a thin film group, the ㈣ photoresist group contains At least—the method for improving the non-uniformity includes at least the following steps: a small line width is formed on each of the two sides of the characteristic photoresist group to form a pseudo characteristic photoresist and the thin film layer is etched under the characteristic photoresist group: and A protective layer is respectively covered under the pseudo-feature photoresist groups on the feature film group, and the protective sound is on the pseudo-feature film groups; θ does not cover the etching of the pseudo-feature film groups; and removing The protective layer. 2 The minimum line width unevenness method described in item 1 of the scope of patent application, wherein the pseudo-resistance photoresist group and the characteristic photoresist group are extended: 1 to 3 times the line width of the feature photoresist. The distance is 3rd in the scope of patent application! The minimum line described in Item: Method 'where each of these pseudo-feature photoresist groups contains at least == 4. The minimum line width unevenness as described in item 3 of the patent application scope. Time: The interval distance of the first ",,,, " P is the i to 3 times of the line width of the characteristic photoresist. Page 19 200418087 VI. Scope of Patent Application " " ~ 5 · If you apply The method for improving the minimum line width non-uniformity described in the third item of the patent scope, wherein the line width of the #zheng photoresistance and the pseudo-characteristic photoresistance is corrected using the light ^ approximate correction method to make the line of the pseudo-characteristic photoresistance The width is the same as the line width of the characteristic light. 6. The method of changing the minimum line width non-uniformity as described in item 1 of the patent application scope, wherein the material of the protective layer includes at least photoresist. The minimum line width unevenness as described in item i of the patent scope is modified by the force method, wherein the material of the thin film layer includes at least silicon. ° 8 · The minimum line width as described in item 1 of the scope of patent application is different. The method of aligning M, where the material of the thin film layer includes at least silicon oxide. ° 9 ·, The method for improving the minimum line width non-uniformity as described in item 1 of the scope of patent application, wherein the material of the thin film layer includes at least silicon nitride. &Quot; 10. · The minimum line width as described in item 1 of the scope of patent application Method for reforming unevenness' wherein the material of the thin film layer contains at least metal. &Quot; 丨 11 · The method for changing the minimum line width unevenness as described in item 1 of the patent application scope, wherein the thin film layer The material contains at least molybdenum. °

六、申請專利範圍 12. 如申請專利範圍第丨項所述之方法，其中該薄膜層的材質至少包含】絡泉見不均勻性的改善 13. 如申請專利範圍第1項所朴、* η 方法’其中該薄膜層的材質迷丨之取小線寬不均句性的改善 %負至少包含矽化鉬。 14· 一種最小線寬不均勻性的& i 用-特徵光阻群在-硬遮罩層:文=有該；f:法係利特徵硬遮罩群，該特徵光阻群包含ί ;:!;=線寬的-小線寬不均勻性的改善方法至少包含 2先阻，該最在該特徵光阻群的兩外侧纟形成 $阻群蝕刻該硬遮罩層，在該特徵丁 +先阻群，罩群以及在該些偽特徵光阻群蝕刻出該特徵硬遮遮罩群； ^阻群τ方分㈣刻出一偽特徵硬覆蓋一保護層於該特徵硬遮罩群之上，該些偽特徵硬遮罩群之上；忒保護層不覆蓋於餘刻該些偽特徵硬遮罩群；以及去除該保護層。 15.如申請專利範圍第14項所述之最小線寬不 ^方法，其中該偽特徵光阻群與該特徵光阻、為該特徵光阻之線寬的1至3倍。隔距離 16·如申請專利範圍第14項所述之最小線寬不均一J勻性的改 2004180876. The scope of patent application 12. The method described in item 丨 of the scope of patent application, wherein the material of the thin film layer includes at least the improvement of non-uniformity of the network. 13. As stated in the first scope of the patent application, * η Method 'wherein the material layer of the thin film layer has a small line width unevenness improvement, and at least includes molybdenum silicide. 14. A & i with the smallest line width non-uniformity-characteristic photoresist group in-hard mask layer: text = with this; f: law-based characteristic hard mask group, the characteristic photoresist group contains ί; :!; = Line width-improvement method of small line width non-uniformity includes at least 2 first resistances, which form $ resistance groups on both sides of the characteristic photoresist group, and etch the hard mask layer, + The first resistance group, the mask group, and the feature hard mask group is etched in the pseudo-feature photoresist groups; ^ the resistance group τ square cuts out a pseudo feature to hard cover a protective layer on the feature hard mask group On top of the pseudo-feature hard mask groups, the protective layer does not cover the pseudo-feature hard mask groups at the moment; and the protective layer is removed. 15. The method of minimum line width according to item 14 of the scope of the patent application, wherein the pseudo-feature photoresist group and the feature photoresist are 1 to 3 times the line width of the feature photoresist. Separation distance 16.The minimum line width unevenness and uniformity improvement as described in item 14 of the scope of patent application 200418087

該些偽特徵光阻群包含至少一偽特徵光善方法，其中每一阻。 =·如申請專利範圍第16項所述之最小線寬不均句性的改 °方法’其中當該偽特徵光阻之數目為複數個時，該些相鄰的偽特徵光阻之間隔距離為該特徵光阻之線寬的1至3 倍。 1 8·如申請專利範圍第1 6項所述之最小線寬不均勻性的改 =方法，其中該特徵光阻與該偽特徵光阻之線寬係利用光_ 予近似修正方法修正，使該捣特徵光阻之線寬與該特徵光阻之線寬相同。 19·如申請專利範圍第丨4項所述之最小線寬不均勻性的改善方法，其中該保護層的材質炱少包含光阻。 20·如申請專利範圍第丨4項所述之最小線寬不均句性的改善方法，其中該薄膜層的材質灵少包含氧化矽。 i 21 ·如申請專利範圍第丨4項所述之最小線寬不均勻性的改善方法，其中該薄膜層的材質矣少包含多晶矽。 22·如申請專利範圍第丨4續所述之最小線寬不均勻性的改善方法，其中該薄=的材質裏少包含單晶石夕。The pseudo-characteristic photoresist groups include at least one pseudo-characteristic photosensitivity method, each of which is resistive. = · The method for improving the minimum line width unevenness sentence as described in item 16 of the scope of patent application ', wherein when the number of the pseudo-feature photoresists is plural, the distance between the adjacent pseudo-feature photoresists It is 1 to 3 times the line width of the characteristic photoresist. 18 · The method of improving the minimum line width non-uniformity as described in item 16 of the scope of the patent application, wherein the line widths of the characteristic photoresist and the pseudo-characteristic photoresist are corrected using an approximate correction method of light, so that The line width of the characteristic photoresist is the same as the line width of the characteristic photoresist. 19. The method for improving the minimum line width non-uniformity as described in item 4 of the patent application scope, wherein the material of the protective layer does not include photoresist. 20. The method for improving the minimum line width unevenness as described in item 4 of the scope of the patent application, wherein the material of the thin film layer rarely contains silicon oxide. i 21 · The method for improving the minimum line width non-uniformity as described in item 4 of the patent application scope, wherein the material of the thin film layer contains at least polycrystalline silicon. 22. The method for improving the minimum line width non-uniformity as described in the patent application scope No. 4 and Continued, wherein the thin material contains less monocrystalline stones.

200418087 六、申請專利範圍 2 3. 如申善方法， 24. 如申善方法， 2 5.如申善方法， 2 6·如申善方法， 27·如申善方法， 2 8·如申善方法， .. /，十[之最小線寬不均勻性的故請專利範圍第14項戶斤=包含金屬。^生的改其中蹿薄膜層的材質，+· 最小線寬不均句性66 Π利範圍第14項：ίϊ包含钥。其中該薄膜層的材質請專利範圍第“項所述寬不均句性的改其中該薄膜層的材質矣少請專利範圍第14項所述^ 句性的改其中該薄膜層的材質多少 ::利範，項：；;===?性的改其中該薄膜層的材質矣 ^ i最小線寬不均勻性請專利範圍第14項所述之：勺入翁仆二。性的改其中該硬遮罩層的材質炱v 03 改 29. *申請專利範圍第14項戶斤述之最性的善方法，其中該硬遮罩I少包3減化石夕。 3〇. *申請專利範圍第14項所述之性的改盖古、、:t 杜丄，L敏$少包含弈、、、口晶石反。 ϋ方法，其中該硬遮罩層的材質矣/ F.4 m200418087 VI. Scope of Patent Application 2 3. As Shenshan Method, 24. As Shenshan Method, 2 5. As Shenshan Method, 2 6. As Shenshan Method, 27. As Shenshan Method, 2 8. As Shenshan Method Method, ../, ten [of the smallest line width non-uniformity, so please patent No. 14 households = including metal. ^ 生改 Wherein the material of the thin film layer, + · Minimum line width uneven sentence 66 Item 14: 利 ϊ contains the key. Among them, the material of the thin film layer is requested to be changed in a wide and uneven manner as described in the item “Patent Range”. Among them, the material of the thin film layer is requested to be changed as described in the item 14 of the Patent Scope. : Li Fan, Item: ;; ===? Change the material of the film layer 性 ^ i Minimum line width non-uniformity, please refer to item 14 of the patent scope: Spoon Weng Fu II. Change the property The material of the hard mask layer 炱 v 03 改 29. * The best method described in the 14th patent application scope of the patent application, where the hard mask I is less than 3 minus fossils. 30. * The scope of the patent application The modification of the nature described in item 14 is: Du Du, L Min $ contains less Yi, Yi, and Quartzite. ΫMethod, where the material of the hard mask layer 矣 / F.4 m

第 200418087 六、申請專利範圍 31·如申請專利範圍第14項所述之最小線寬不均勻性的改善方法’其中諒硬遮罩層的材質至少包含氮化碳。 3 2 · —種光罩組合一第一光罩，且該第一光該光及複數個第二特徵該第一特一第二光該第三區徵區域，徵區域或徵區域的罩，且該域之位置且該第三該些第二區域，兩侧，第二光係對應區域之特徵區其中該第一光罩係在一薄成至少一第一特徵薄膜以光罩係定義一第二光阻層罩組合至少罩上包含至其中該些第以及罩上包含至於該第一特尺寸大於上域的尺寸；膜層上定義及複數個第，以保護該 33·如申請專利範圍第32項所述之區域與每m二特徵區域之徵溥膜之線寬的1至3倍。包含：少一第一特徵區域以二特徵區域分別位於少一第三區域，其中徵區域或該些第二特述所對應之該第一特一第一光阻層，以形二特徵薄膜，該第二第一特徵薄膜。罩組合，其中該第一間隔距離為該第一特 34.如申請專利範圍第32項所述二光阻層之材質為正光阻時，該第 ’丨中當該第每-該些第二特徵區域之位置。第二£域之位置係對應於 200418087 六、申請專利範圍 35.如申請專利範圍第32項所述之光罩組合，其中當該第二光阻層之材質為負光阻時，該第三區域之位置係對應於No. 200418087 6. Scope of patent application 31. The method for improving the minimum line width non-uniformity as described in item 14 of the scope of patent application, wherein the material of the hard mask layer contains at least carbon nitride. 3 2 · — a kind of photomask combining a first photomask, and the first light, the light, and a plurality of second features, the first special one, the second light, the third area, or the area of the area, And the position of the domain and the third, the second area, the two sides, and the characteristic area of the corresponding area of the second light system, wherein the first photomask is thinly formed into at least one first feature film and the photomask system defines a The second photoresist layer cover combination includes at least the cover and the cover and the cover including the first special size larger than the size of the upper domain; the film layer is defined and a plurality of pieces to protect the 33. The line width of the sacral membrane of the area described in item 32 and the two characteristic areas per m is 1 to 3 times. Containing: at least one first feature region and two feature regions are respectively located at least one third region, wherein the sign region or the second special description corresponds to the first special first photoresist layer in the shape of two characteristic thin films, The second first feature film. Cover combination, wherein the first separation distance is the first feature 34. When the material of the two photoresist layers described in item 32 of the patent application scope is a positive photoresist, The location of the feature area. The position of the second £ field corresponds to 200418087 6. Application patent scope 35. The photomask combination described in item 32 of the patent application scope, wherein when the material of the second photoresist layer is negative photoresist, the third The location of the area corresponds to