玫、發明說明 (發明說明應敘明：發明所屬之技術領域、先前技術、內容、實施方式及圖式簡單 說明） 發明領域 本發明係關於檢測口臭因素氣體成分，用以進行口臭檢 查的口臭檢查裝置及其調整方法。 發明背景 習知技藝之說明 使用金屬氧化物半導體氣體感測器(Gas sensor)之習知的 口臭檢查裝置中，檢測對象氣體限定於硫化物族的氣體，特 別是與口臭因素之一的牙周病有良好相互關係的甲硫醇 (Methylmercaptan，CHsSH)。爲了由甲硫醇的濃度進行口臭 強度的判定，設定口臭強度的判定基準之調整氣體，也使用 甲硫醇。 一般的口臭因素並不限於牙周病，因像飮食或抽煙之日 常生活的生活習慣、健康狀態等造成短期的以及/或長期的 變動，此外，口臭因素氣體成分也不限於甲硫醇，也可考慮 各式各樣的氣體成分。因此，僅以甲硫醇調整的習知口臭檢 查裝置中，與牙周病有良好相互關係之與由其他因素所產生 的一般口臭與檢查結果的相互關係無法獲得，具有不能進行 適當口臭檢查的情形。 發明槪要 本發明乃鑒於上述事情，其目的爲提供不限於牙周病， 檢測像飮食或抽煙之日常生活的生活習慣、健康狀態等造成 短期的以及/或長期的變動之種種口臭因素氣體成分，適當 6 6157pif 1 .doc/015(無劃底線) 地進行口臭檢查之口臭檢查裝置。即本發明的口臭檢查裝 置，其特徵包括： 金屬氧化物半導體氣體感測器； 加熱器，使金屬氧化物半導體氣體感測器加熱； 加熱器控制裝置，透過動作開始訊號使金屬氧化物半導 體氣體感測器通電，同時控制加熱器的通電’使金屬氧化物 半導體氣體感測器的溫度變成高溫’在高溫狀態下’由金屬 氧化物半導體氣體感測器的電阻値變化，檢測對金屬氧化物 半導體氣體感測器的呼氣之吹氣，根據此檢測’控制加熱器 的通電，使金屬氧化物半導體氣體感測器的溫度變成低溫； 檢測裝置，爲了使金屬氧化物半導體氣體感測器的溫度 變成低溫，在加熱器的通電控制開始之後’經過一定時間的 某一時刻，檢測金屬氧化物半導體氣體感測器的電阻値，在 高溫加熱狀態下，將正當檢測呼氣之吹氣之前或一定時間之 後的電阻値當作基準電阻値，透過從低溫加熱狀態轉移，經 過一定時間的某一時刻之金屬氧化物半導體氣體感測器的電 阻値與基準電阻値之比値，與預先設定的基準之比値的比 較，檢測呼氣中的口臭因素氣體成分的濃度； 記憶裝置，正當將硫化物族氣體與碳化氫族氣體以預定 比例混合的調整氣體吹到金屬氧化物半導體氣體感測器之 前，或一定時間後的電阻値當作調整用的基準電阻値，同 時’將從低溫加熱狀態轉移，經過一定時間的某一時刻之金 屬氧化物半導體氣體感測器的電阻値，與調整用的基準電阻 値之比値，當作上述基準的比値來儲存。 本口臭檢查裝置中，正當將硫化物族氣體與碳化氫族氣 6157pif 1 .doc/015 憮劃底線) 7 體以預定比例混合的調整氣體吹到金屬氧化物半導體氣體感 測器之前，或一定時間後的電阻値當作調整用的基準電阻 値，同時，因將從低溫加熱狀態轉移，經過一定時間的某一 時刻之金屬氧化物半導體氣體感測器的電阻値與調整用的基 準電阻値之比値，當作口臭檢查的判定基準，故不限於牙周 病，檢測像飮食或抽煙之日常生活的生活習慣、健康狀態等 造成短期的以及/或長期的變動之種種口臭因素氣體成分， 可適當地進行口臭的檢查。 上述口臭檢查裝置中，調整氣體使用甲硫醇與乙烯的混 合氣體較佳。這種情形與僅由甲硫醇所構成的調整氣體比 較，在高溫狀態下將調整氣體吹到金屬氧化物半導體氣體感 測器時的電阻値變化變大，使其電阻値變化轉移到低溫加熱 狀態之定時（Timing)的觸發（Trigger)容易產生。此外，甲硫 醇與乙烯的混合比約1:10較佳。這種情形，可得到與器官 機能試驗所得的檢查結果良好的相互關係。 本發明之另一目的爲提供不限於牙周病，檢測像飮食或 抽煙之日常生活的生活習慣、健康狀態等造成短期的以及/ 或長期的變動之種種口臭因素氣體成分，適當地進行口臭檢 查的口臭檢查裝置之調整方法。即本發明的口臭檢查裝置之 調整方法，適於用上述之口臭檢查裝置，其特徵在於包括： 爲了使金屬氧化物半導體氣體感測器的溫度變成低溫， 在加熱器的通電控制開始之後，經過一定時間的某一時刻， 利用檢測裝置檢測金屬氧化物半導體氣體感測器的電阻値; 在高溫加熱狀態下，將正當硫化物族氣體與碳化氫族氣體以 預定比例混合的調整氣體吹到金屬氧化物半導體氣體感測器 6157pifl.doc/015(無劃底線) 8 548093 之前，或一定時間後的電阻値當作基準電阻値;以及將從低 溫加熱狀態轉移，經過一定時間的某一時刻之金屬氧化物半 導體氣體感測器的電阻値與調整用的基準電阻値之比値，當 ‘ 作上述基準的比値儲存於記憶裝置。 此調整方法中，將正當將硫化物族氣體與碳化氫族氣體 以預定比例混合的調整氣體吹到金屬氧化物半導體氣體感測 器之前，或一定時間後的電阻値當作調整用的基準電阻値， 同時，因將從低溫加熱狀態轉移，經過一定時間的某一時刻 之金屬氧化物半導體氣體感測器的電阻値與調整用的基準電 _ 阻値之比値，當作口臭檢查的判定基準，故不限於牙周病， 檢測像飮食或抽煙之日常生活的生活習慣、健康狀態等造成 短期的以及/或長期的變動之種種口臭因素氣體成分，可適 當地進行口臭的檢查。 上述調整方法中，調整氣體使用甲硫醇與乙烯的混合氣 體較佳。這種情形與僅由甲硫醇所構成的調整氣體比較，在 高溫狀態下將調整氣體吹到金屬氧化物半導體氣體感測器時 的電阻値變化變大，使其電阻値變化轉移到低溫加熱狀態之 定時的觸發容易產生。此外，甲硫醇與乙烯的混合比約1:10 ® 較佳。這種情形，可得到與器官機能試驗所得的檢查結果良 好的相互關係。 本發明之另一特徵及其所帶來的效果，參照添付的圖面 當可理解用以實施以下所述之發明的較佳實施例。 亂式之簡單說明 第1圖爲本發明之口臭檢查裝置之一實施例的具體電路 圖。 6157pif 1 .doc/015(無劃底線) 9 548093 第2圖爲口臭檢查裝置的大氣污染檢測之動作說明用時 序圖。 第3圖爲無口臭時的金屬氧化物半導體氣體感測器之動 作說明用時序圖。 第4圖爲有口臭時的金屬氧化物半導體氣體感測器之動 作說明用時序圖。 第5圖爲顯示器官機能試驗與金屬氧化物半導體氣體感 測器之電阻値變化之相互關係圖。 第6A圖爲顯示僅由甲硫醇所構成的調整氣體與器官機 φ 能試驗之相互關係圖。第6B圖爲顯示由甲硫醇與甲烷的混 合氣體所構成的調整氣體與器官機能試驗之相互關係圖。第 6C圖爲顯示由甲硫醇與乙烯的混合氣體所構成的調整氣體 與器官機能試驗之相互關係圖。 第7A〜7D圖係顯示調整氣體的混合比之檢討結果圖。 第8A〜8D圖係顯示調整氣體的混合比之檢討結果圖。 第9A〜9D圖係顯示調整氣體的混合比之檢討結果圖。 第10圖爲顯示依照僅由甲硫醇所構成的調整氣體，進 行調整時的動作說明用時序圖。 ® 第11圖爲顯示依照由甲硫醇與乙烯的混合氣體所構成 的調整氣體，進行調整時的動作說明用時序圖。 圖式標號之簡單說明 1 電池電源 2 加熱器 3 金屬氧化物半導體氣體感測器 4 液晶顯示器 6157pifl.doc/015(無劃底線) 10 5 微電腦 6 EEPROM 7 並聯穩壓器 8 重置1C 9 時鐘振盪器 10 連接器 Cl 〜C3 電容器 548093 較佳實施例之詳細說明 第1圖係顯示本實施例的電路圖。本實施例其主要構成 要素包括： 乾電池、充電電池等的低電壓(例如3V)之電池電源1 ; 電極端子①、②，連接於埋設在氣體感測體內之加熱器2 的兩端； 金屬氧化物半導體氣體感測器3,連接於氣體感測體之 一端的輸出電極端子③之3端子構造，其熱響應速度快； 液晶顯示器(以下稱爲LCD)4 ; 微電腦(microcomputer)〗，將進行加熱器2之通電控制的 裝置’或進行檢測被檢測對象氣體之檢測裝置等的功能程式 化’而且具備LCD4的驅動功能’進行裝置全體之控制處 理； EEPR0M6，儲存用以進行判定口臭強度基準之杳料。 金屬氧化物半導體氣體感測器3，其氣體感測體的輸出 電極端子③與連接於加熱器2之接地側〜端的電極端子②之 間的電阻値，係透過在氣體感測體接觸氣體產生變化，故內 裝的加熱器2經由PNP型電晶體Q1連接於電池^源1。此 6157pifl.doc/015(無劃底線) 548093 外，氣體感測體對電池電源1，經由PNP型電晶體Q2與電 阻R2之串聯電路，與PNP型電晶體Q3與電阻R9之串聯電 路兩者之並聯電路連接，電晶體Q2或Q3或兩者在開啓(On) 時，透過流經電阻R2或R9或兩電阻之並聯電路，並流過 氣體感測體的電流產生之氣體感測體之兩端電壓Vs被取入 微電腦5的輸入埠(Port) I 1，微電腦5由此兩端電壓Vs演 算氣體感測體之電阻値。 微電腦5其電源端子V係經由二極體D1連接於電池電 源1，接受電源供給。將連接於電池電源1之啓動開關SW φ 與電阻R5之串聯電路的中點連接於輸入埠I 2，若輸入璋I 2爲高位準(High level)，則依照程式開始進行用以檢測氣體 之控制處理。 微電腦5具備:中點連接於電晶體qi的基極(base)，輸 出埠01連接於一端連接電池電源1的+極之電阻R3、R4 之串聯電路之另一端，透過自輸出埠01輸出工作(Duty)控 制用的脈衝訊號，使電晶體Q1開啓關閉，來控制加熱器2 通電之功能，透過此功能，藉由延長電晶體Q1之在工作狀 態中（On duty)，使金屬氧化物半導體氣體感測器3加熱到高着 溫狀態，相反地，藉由縮短，進行當作低溫加熱狀態的加熱 控制。 微電腦5其輸出埠03連接電晶體Q2的偏壓電路，而且 輸出埠04連接電晶體Q3的偏壓電路，藉由使輸出埠〇3、 〇4成低位準，讓基極電流流過對應的電晶體Q2、Q3使其 開啓，使氣體感測體之電阻Rs與電池電源1的+極之間連 接電阻R2、R9。即具備切換負載電阻的功能。 6157pifl.doc/015(無劃底線) 12 548093 微電腦5其輸出埠Oil〜014分別連接LCD4的輸入端子 ID1〜ID4，此外，輸出埠〇15、〇16、〇17、018、〇19、〇20 分別連接輸入端子ID5、ID6與ID7、ID8與ID9、ID10與 ID11、ID12 與 ID13、ID14 與 ID15、ID16，此外，輸出埠〇2 連接LCD4的共通端子C0M1，透過由輸出埠011〜〇20、〇2 輸出的驅動訊號，控制LCD4之字元顯示（Character display) 〇 微電腦5具備將並聯穩壓器（Shunt regulators之電壓取 入輸入埠I 3，當並聯穩壓器7的電壓高於規定値時，即可 φ 檢測電池斷電之電池斷電檢測功能。 並聯穩壓器7係經由電晶體Q2與電阻R1連接於電池 電源1，使電池電壓穩定於預定電壓。其穩定的電壓施加於 輸入埠I 3，同時，由其穩定的電壓監視電池電壓，相對地 可檢測電池電壓的降低。 EEPR0M6係登記使用於檢測被檢測對象的氣體之基準 値，在進行裝置的檢查製程時，分別儲存高溫狀態下的金屬 氧化物半導體氣體感測器3的氣體感測體之電阻値R0 ’與 自高溫狀態切換成低溫加熱狀態時的電阻値Rs，與兩者之 比値Rs/RO。一般，此儲存的比値係用來當作檢測適合於被 檢測對象氣體之口臭因素氣體成分濃度，亦即口臭強度之基 準値。 EEPR0M6其資料輸入端子DI、串式計時（Serial clock) 端子SR與晶片選擇器（Chip selector)端子CS分別連接於 微電腦5的資料輸出埠do、輸出埠〇21、022，同時，藉由 電阻R7、R8、R6上拉(pull叩）。此外，資料輸出端子D〇連 6157pifl.doc/015(無劃底線) 13 548093 接於微電腦5的資料輸入端子di。 · LCD4其輸入端子ID1〜ID16以及共通端子COM1分別透 過電阻上拉，當與共通端子COM1以及字元對應之任一個輸 入端子ID1〜ID16變成低位準的話，則顯示與該輸入端子對 應之字元，ID1〜ID4分別與口臭因素氣體成分的濃度，即顯 示口臭強度之字元對應，ID5〜ID16與表示在顯示濃度之字 元兩側的人物等之表情的字元對應，口臭因素氣體成分的濃 度越高，例如表情越強烈。 此外，圖示中的標號8係投入電源時，施加重置(Reset) φ 訊號給微電腦5，進行重置之重置1C，標號9係施加基準時 鐘（Reference clock)給微電腦5之時鐘振邊器（Clock oscillator)，標號10係連接微電腦5與LCD4之連接器。而 C1〜C3係電容器。 接著說明本實施例之動作。首先，連接電池電源1的 話，透過重置1C 8的動作將微電腦5重置，進行初期設 定。之後微電腦5以低消耗模式動作變成待機狀態。 在此待機狀態中，連接微電腦5的輸出場03之設定端 子AD】與接地之間呈短路狀態，啓動開關sw被開啓操作，_ 輸入捧I 2的輸入上升到高位準的話，即輸入動作開始訊號 的話，微電腦5預先變成程式化調整模式的動作狀態，自輸 出埠01產生例如週期爲8.2m秒，低位準期間爲960 μ秒的 脈衝訊號。 因此，電晶體Q1以960//秒的在工作狀態中，且週期爲 8.2m秒開啓關閉，在開啓期間，從電池電源丨供應電力給 加熱器2。此時施加給加熱器2的平均電壓，透過工作控制 6l57pifl.d〇C/015(無劃底線) 14 548093 變成約1·ον。因此，加熱器2的發熱量多，金屬氧化物半導 . 體氣體感測器3加熱到高溫狀態。 另一方面，微電腦5例如每0.5秒以電晶體Q1的關閉定 時，使電晶體Q2以及Q3(或僅Q2或Q3)開啓的訊號由輸出 埠〇3以及〇4(或03或04)輸出，由負載電阻之電阻R2以 及R9所構成的並聯電路(或電阻R2或R9)與金屬氧化物半 導體氣體感測器3的氣體感測體串聯連接，透過此負載電阻 對氣體感測體通電。因此，在電晶體Q1關閉的定時中’微 電腦5將金屬氧化物半導體氣體感測器3的氣體感測體兩端 · 電壓Vs取入輸入璋I 1，取樣氣體感測體兩端電壓Vs，計 算氣體感測體的電阻値Rs。同時，每0.5秒演算利用本次取 樣所求得的電阻値Rs與上次取樣所求得的電阻値Rs’的比。 然後在高溫狀態下，將調整氣體(硫化物族氣體之甲硫醇 與碳化氫族氣體之乙烯以1:10之混合比混合的氣體)吹到金 屬氧化物半導體氣體感測器3的話，氣體感測體的電阻値 Rs將降低。由每0.5秒所求得的本次取樣所求得的電阻値 Rs與上次取樣所求得的電阻値Rs’的比小於0.96的話，微電 腦5檢測纏氣難吹。 # 例如，從檢測調整氣體經過1秒的某一時刻，微電腦5 將自輸出璋01輸出的脈衝訊號之低位準期間轉換成75// 秒，在週期不變下，將電晶體Q1的在工作狀態中當作75// 秒。藉此，透過電晶體Q1施加給加熱器2的平均電壓降低 到約0.3V，加熱器2的發熱量降低。因此，金屬氧化物半導 體氣體感測器3從高溫狀態轉移到低溫狀態。 從高溫狀態開始轉換到低溫加熱狀態時，且在電晶體 6157pifl.d〇C/015(無劃底線) 15 548093 Q1關閉的定時中，微電腦5將金屬氧化物半導體氣體感測 器3的氣體感測體兩端電壓Vs取入輸入埠I 1，由此取入的 電壓Vs以及負載電阻値、電源電壓値，演算金屬氧化物半 導體氣體感測器3的氣體感測體之基準電阻値r〇。 從開始轉移到低溫加熱狀態到金屬氧化物半導體氣體感 測器3的電阻値穩定爲止的過渡期間，例如經過2秒後且在 電晶體Q1關閉的定時中，微電腦5將金屬氧化物半導體氣 體感測器3的氣體感測體兩端電壓Vs取入輸入埠I 1，由此 取入的電壓Vs以及負載電阻値、電源電壓値，演算金屬氧 φ 化物半導體氣體感測器3的氣體感測體之電阻値Rs。此 外，求此電阻値Rs與基準電阻値R〇的比RS/ R〇，將Rs以 及R0的値都當作基準値資料儲存於EEPROM6。藉此，可設 定用以檢測口臭檢查裝置的被檢查對象氣體之口臭因素氣體 成分的濃度之基準値。 上述調整模式結束的話，微電腦5返回待機狀態，因 此，解除調整端子ADJ與接地間的連接後，啓動開關SW被 開啓操作的話，微電腦5開始通常動作模式的檢測動作。 其次說明上述的基準値資料登記在EEPROM6之本實施 · 例，實際使用在口臭檢查時的動作。 當作已經連接電池電源1，微電腦5處於待機狀態，在 此待機狀態時，啓動開關SW被開啓操作，輸入埠I 2上升 到高位準的話，微電腦5經過初期化處理後，開始進行由通 常動作模式所產生的動作。首先，將登記在EEPROM6之資 料讀出儲存於內裝RAM，設定使用於口臭強度檢測的基準 値。 6157pif 1 .doc/015 憮劃底線) 16 548093 若通常動作模式開始的話，與調整模式時相同，微電腦 . 5自輸出璋01產生週期爲8.2m秒，低位準期間爲960//秒 的脈衝訊號。 福此，電晶體Q1以960//秒的在工作狀態中，且週期爲 8.2m秒開啓關閉，在開啓期間，由電池電源1供應電力給 金屬氧化物半導體氣體感測器3的加熱器2。與上述相同地 將金屬氧化物半導體氣體感測器3當作高溫狀態。因此，例 如每0.5秒以電晶體Q1的關閉定時，微電腦5取樣氣體感 測體兩端電壓，計算氣體感測體的電阻値Rs。同時，每0.5 φ 秒演算利用本次取樣所求得的電阻値Rs與上次取樣所求得 的電阻値Rs’的比。 在高溫狀態下，將被檢測對象的人之呼氣吹到金屬氧化 物半導體氣體感測器3的話，因呼氣中包含水蒸氣或氣體成 分，故造成氣體感測體的電阻値Rs降低。由每0.5秒所求 得的本次取樣所求得的電阻値Rs與上次取樣所求得的電阻 値Rs’的比小於0.96的話，微電腦5檢測呼氣被吹出。 此處，微電腦5在剛檢測上述呼氣之後，進行周圍環境 污染（大氣污染）的檢測判斷，在周圍環境被檢測判斷爲污染 $ 時，停止呼氣檢測動作。即如圖2所示，求在剛檢測呼氣開 始的某一時刻ta之後的取樣時所檢測的金屬氧化物半導體 氣體感測器3的氣體感測體的電阻値Rs，與在調整模式時 進行檢測，儲存在EEPROM6的基準抵抗値R0之比，其所 求得的値比預定値（例如0.2)小的情形，與具有上升傾向的 情形，即電阻値Rs在上升的潔淨方向的情形，判斷爲口臭 的檢測處於不可能的污染狀態，微電腦5停止檢測動作，返 6157pifl.doc/015(無劃底線) 17 548093 回待機狀態，同時，LCD4顯示大氣污染狀態。第2圖顯示 此大氣污染判斷的模式圖，圖中A、A’的曲線係顯示來自大 氣污染少的情形之呼氣檢測的定時ta之Rs/R0的變化，B爲 大氣污染狀態的Rs/R〇的變化，C爲比大氣污染程度高，透 過吹出呼氣Rs/R0的値顯示表示潔淨方向的情形，α表示呼 氣檢測限界，/5表示大氣污染檢測限界點。 判定大氣的污染爲好的情形，微電腦5爲從呼氣檢測經 過例如1秒的某一時刻，在週期不變下，將電晶體Q1的在 工作狀態中當作75//秒之脈衝訊號自輸出埠01輸出，使金 屬氧化物半導體氣體感測器3的溫度轉移到低溫加熱狀態。 在此轉移開始的某一時刻中，將取樣的氣體感測體的電 阻値當作基準電阻値R0,儲存於內裝RAM，之後演算與以每 0.5秒的取樣所求得的電阻値Rs的比Rs/ R0,。因此’求出 自低溫加熱狀態轉移開始，經過2秒的某一時刻所求得的、演 算値，其對以調整模式所求得的基準値(Rs/ R0)之比率’ $ 此比率値判定口臭強度，以LCD4顯示依照其口臭強度的字 元。之後，微電腦5在經過一定時間後返回到待機狀態’ LCD4的顯示也熄燈。 第3、4圖顯示由啓動開關SW的開啓操作某一時刻U 開始之Rs/ R0’的遷移狀態。第3圖顯示從某一時刻@ 2秒後的某一時刻t4所求得的Rs/ R0,的値爲25。第4圖顯 示從某一時刻t3經過2秒後的某一時刻t4所求得的Rs/ RQ 的値爲8。 第3、4圖的情形，儲存在EEPROM6的基準値Rs/ 例 如10，如第3圖所示，某一時刻t4所求得的Rs/ R〇’的値比 6157pif 1 .doc/015(無劃底線) 10還大的情形判斷爲無口臭，如第4圖所示，顯示比10還 小的情形判斷爲有口臭。微電腦5更根據求得的値Rs/ R0’ 與基準値Rs/ R〇演算口臭強度，將對應口臭強度之字元顯 示於LCD4。無口臭的情形也將對應之字元顯示於LCD4。此 外，第3圖以及第4圖中t2表示呼氣檢測的某一時刻。 透過器官機能試驗，以等級1:感覺不到口臭，等級2:感 覺到微弱的口臭，等級3:感覺到口臭，等級4:感覺到強烈的 Q臭之4階段評價，求出判定屬於各等級之各5人，總共 20人的被試驗者，口臭檢查裝置中的金屬氧化物半導體氣 體感測器3的電阻値的比Rs/ R0,的話，如第5圖所示，各 等級1〜4判定具有誤差。即爲了以口臭檢查裝置適當地檢測 Q臭因素氣體成分的濃度，調整模式中的基準値設定很重 要。 因此’對以器官機能試驗判定屬於等級3之5位被試驗 者，將調整氣體當作僅甲硫醇的單體氣體、甲硫醇與甲烷之 混合氣體、甲硫醇與乙烯之混合氣體，設定各個基準値，依 照各調整氣體調整的口臭檢查裝置所得到的檢查結果，與器 官機能試驗之相互關係的硏究結果顯示於第6A〜6C圖。此 外’第6A〜6C圖中橫軸的顯示水平丨〜4係對應上述器官機 能試驗的等級1〜4。 調整氣體當作僅甲硫醇之單體氣體的情形，如第6A圖 所不’由口臭檢查裝置所得的檢查結果與器官機能試驗之相 互關係不佳’無實用性。調整氣體當作甲硫醇與甲烷之混合 氣體的情形，如第6B圖所示，雖然比甲硫醇單體還好，但 其由口臭檢查裝置所得的檢查結果與器官機能試驗之相互關 615<7pif 1 .doc/015 憮劃底線) 19 548093 係不佳，這也不適合實用。 _ 另一方面，將調整氣體當作甲硫醇與乙烯之混合氣體的 情形，如第6C圖所示，口臭檢查裝置所得的檢查結果與器 · 官機能試驗之相互關係非常好，判定爲充分達到實用的水 準。因若將甲硫醇與乙烯之混合氣體當作調整氣體使用的 話，判定與器官機能試驗之相互關係非常良好，故接著參照 第7A〜7D圖、第8A〜8D圖以及第9A〜9D圖來說明關於甲硫 醇與乙烯之混合比的檢討結果。 首先，由甲硫醇0.7ppm與乙嫌lOppm混合的調整氣體 φ 所調整的口臭檢查裝置，如第7C圖所示，雖然與等級3的 被試驗者之間可獲得非常良好的相互關係，但其他的等級 1、2、4其相互關係不是很好。此外，由甲硫醇0.7ppm與乙 烯3ppm混合的調整氣體所調整的口臭檢查裝置，如第 8A〜8D圖所示，各等級1〜4的被試驗者，其相互關係不是很 好。對此，由甲硫醇0.7ppm與乙烯7ppm混合的調整氣體所 調整的口臭檢查裝置，如第9A〜9D圖所示，各等級1〜4的 被試驗者之間可獲得非常良好的相互關係。故若以甲硫醇與 乙烯之混合比爲1:10之調整氣體調整的話，可實現與器官 # 機能試驗之相互關係非常良好的口臭檢查裝置及其調整方 法。 如上所述，本實施例之口臭檢查裝置及其調整方法中， 因調整模式中使用甲硫醇與乙烯之混合比爲1:10的混合調 整氣體，設定用以進行口臭檢查的基準値，故可進行與器官 機能試驗之相互關係非常良好的調整。與僅利用甲硫醇進行 調整的習知例不同，具有不限於牙周病，檢測像飮食或抽煙 6157pifLdoc/015(無劃底線) 20 548093 之日常生活的生活習慣、健康狀態等造成短期的以及/或長 期的變動之種種口臭因素氣體成分，可適當地進行口臭檢查 之優點。 本實施例中，在高溫狀態下將呼氣吹到金屬氧化物半導 體氣體感測器3時的電阻値變化’當作轉移到低溫加熱狀態 之定時的觸發，可使轉移到低溫加熱狀態之定時容易決定。 因此，調整模式中使用僅由甲硫醇所構成的調整氣體之情 形，如第10圖所示，當由每0.5秒所求得的本次取樣(某一 時刻t3)所求得的電阻値Rs與上次取樣(某一時刻t2)所求得 φ 的電阻値Rs’的比大於0.96，微電腦5有檢測不到調整氣體 被吹出的情形。即僅由甲硫醇所構成的調整氣體，從高溫狀 態轉移到低溫加熱狀態之定時的觸發不會產生，有無法正常 進行調整之虞。 對此，若使用像本實施例之甲硫醇與乙烯的混合調整氣 體，如第11圖所示，當由每0.5秒所求得的本次取樣(某一 時刻t3)所求得的電阻値Rs與上次取樣(某一時刻t2)所求得 的電阻値Rs’的比小於0.96，微電腦5可檢測到調整氣體被 吹出。如此，調整氣體透過使用甲硫醇與乙烯的混合調整氣 €> 體，必產生從高溫狀態轉移到低溫加熱狀態之定時的觸發， 具有可正常進行調整之優點。 6157pifl .doc/Ol 5(無劃底線) 21Description of the invention (The description of the invention should state: the technical field to which the invention belongs, the prior art, the content, the embodiments and the drawings are simply explained) FIELD OF THE INVENTION Device and its adjustment method. BACKGROUND OF THE INVENTION Description of Conventional Techniques In a conventional halitosis inspection device using a metal oxide semiconductor gas sensor, the detection target gas is limited to a gas of the sulfide family, especially periodontal which is one of the factors responsible for halitosis. Disease has a good correlation between methyl mercaptan (Methylmercaptan, CHsSH). In order to determine the bad breath intensity based on the concentration of methyl mercaptan, an adjustment gas that sets a criterion for determining the bad breath intensity also uses methyl mercaptan. Ordinary halitosis factors are not limited to periodontal disease, and cause short-term and / or long-term changes due to daily habits and health conditions such as eating or smoking. In addition, the gas composition of halitosis factors is not limited to methyl mercaptan, A wide variety of gas components can also be considered. Therefore, in the conventional bad breath inspection device adjusted only with methyl mercaptan, the correlation between periodontal disease and general bad breath caused by other factors and the test result cannot be obtained, and there is a problem that a proper bad breath test cannot be performed. situation. SUMMARY OF THE INVENTION The present invention is made in view of the above, and its purpose is to provide a variety of halitosis factors that are not limited to periodontal disease, and can detect short-term and / or long-term changes in the lifestyle and health of daily life such as eating or smoking. Ingredients, appropriate 6 6157 pif 1 .doc / 015 (half-line-less) halitosis inspection device to perform halitosis inspection. That is, the bad breath inspection device of the present invention includes: a metal oxide semiconductor gas sensor; a heater for heating the metal oxide semiconductor gas sensor; a heater control device for causing the metal oxide semiconductor gas to pass through an operation start signal The sensor is energized and the heater is controlled at the same time to 'make the temperature of the metal oxide semiconductor gas sensor high' under a high temperature state. The resistance of the metal oxide semiconductor gas sensor is changed to detect the effect on the metal oxide. According to this detection, the breath of the semiconductor gas sensor is controlled to control the energization of the heater, so that the temperature of the metal oxide semiconductor gas sensor becomes low temperature; the detection device is used to make the temperature of the metal oxide semiconductor gas sensor The temperature becomes low temperature. After a certain period of time has passed after the start of the energization control of the heater, the resistance of the metal-oxide-semiconductor gas sensor is detected. In a high-temperature heating state, the exhalation blow is properly detected before or After a certain period of time, the resistance 値 is used as the reference resistance 透过. State transition, the ratio of the resistance 値 of the metal oxide semiconductor gas sensor to the reference resistance 値 after a certain period of time and a certain time, and the comparison with a preset reference ratio 値 to detect the bad breath factor gas components in the breath The concentration of the memory device, just before blowing the adjustment gas mixed with the sulfide group gas and the hydrocarbon group gas at a predetermined ratio to the metal oxide semiconductor gas sensor, or the resistance after a certain period of time is used as the reference resistance for adjustment同时, meanwhile, the ratio 値 of the resistance 値 of the metal oxide semiconductor gas sensor to the transition from the low-temperature heating state to a certain time and a certain time and the reference resistance 调整 for adjustment shall be regarded as the reference 値Save. In this halitosis inspection device, the sulfide-based gas and the hydrocarbon-based gas 6157pif 1 .doc / 015 are underlined) 7 The adjustment gas mixed in a predetermined ratio is blown before the metal oxide semiconductor gas sensor, or it must be The resistance 値 after time is used as the reference resistance 调整 for adjustment, and at the same time, the resistance 値 of the metal oxide semiconductor gas sensor 値 and the reference resistance 调整 for adjustment are transferred from the low temperature heating state at a certain time and time. The ratio is used as the judgment standard for halitosis inspection, so it is not limited to periodontal disease. It detects the gas components of various halitosis factors that cause short-term and / or long-term changes such as the daily habits and health status of daily life such as eating or smoking. You can properly check for bad breath. In the above-mentioned halitosis inspection device, it is preferable to use a mixed gas of methyl mercaptan and ethylene as the adjustment gas. In this case, compared with the adjustment gas composed of methyl mercaptan alone, the resistance 値 change when the adjustment gas is blown to the metal oxide semiconductor gas sensor at a high temperature becomes larger, so that the resistance 値 change is transferred to low temperature heating. Timing triggers (Timing) are easily generated. In addition, the mixing ratio of methyl mercaptan and ethylene is preferably about 1:10. In this case, a good correlation can be obtained with the test results obtained from the organ function test. Another object of the present invention is to provide a variety of bad breath factor gas components that are not limited to periodontal disease, and can detect short-term and / or long-term changes in lifestyle habits, health conditions, and other daily habits such as eating or smoking. Adjustment method of inspection bad breath inspection device. That is, the method for adjusting the halitosis inspection device of the present invention is suitable for using the above-mentioned halitosis inspection device, and is characterized in that: In order to reduce the temperature of the metal oxide semiconductor gas sensor to a low temperature, At a certain time and time, the resistance of the metal oxide semiconductor gas sensor 値 is detected by a detection device; in a high-temperature heating state, an adjustment gas mixed with a legitimate sulfide group gas and a hydrocarbon group gas at a predetermined ratio is blown to the metal Oxide semiconductor gas sensor 6157pifl.doc / 015 (Unlined) 8 548093 The resistance 値 before or after a certain period of time is used as the reference resistance 以及; and it will be transferred from a low-temperature heating state to a certain time after a certain period of time. The ratio 値 of the resistance 値 of the metal oxide semiconductor gas sensor to the reference resistance 调整 for adjustment is stored in the memory device as the ratio 値 of the reference. In this adjustment method, the resistance gas properly mixed with the sulfide group gas and the hydrocarbon group gas in a predetermined ratio is blown to the metal oxide semiconductor gas sensor, or the resistance after a certain period of time is used as the reference resistance for adjustment. At the same time, the ratio of the resistance 値 of the metal oxide semiconductor gas sensor to the reference _ resistance 调整 for adjustment will be used as a judgment for halitosis inspection due to the transition from the low-temperature heating state to a certain time and time. The standard is not limited to periodontal disease. It can detect various bad breath factors such as the lifestyle and health status of daily life such as eating or smoking, which can cause short-term and / or long-term changes. In the above adjustment method, it is preferable to use a mixed gas of methyl mercaptan and ethylene as the adjustment gas. In this case, compared with the adjustment gas composed of methyl mercaptan alone, the resistance 値 change when the adjustment gas is blown to the metal oxide semiconductor gas sensor at a high temperature becomes larger, so that the resistance 値 change is transferred to low temperature heating. The timing trigger of the state is easy to produce. In addition, the mixing ratio of methyl mercaptan and ethylene is preferably about 1:10 ®. In this case, a good correlation can be obtained with the test results obtained from organ function tests. Another feature of the present invention and its effects can be understood by referring to the attached drawings. The preferred embodiments for implementing the invention described below. Simple description of the disorder. Fig. 1 is a specific circuit diagram of an embodiment of the halitosis inspection apparatus of the present invention. 6157pif 1 .doc / 015 (Underlined) 9 548093 Figure 2 is a sequence diagram for explaining the operation of air pollution detection by the bad breath inspection device. Fig. 3 is a timing chart for explaining the operation of the metal oxide semiconductor gas sensor when there is no bad breath. Fig. 4 is a timing chart for explaining the operation of the metal oxide semiconductor gas sensor when bad breath is present. Fig. 5 is a graph showing the correlation between the organ function test and the resistance change of the metal oxide semiconductor gas sensor. Fig. 6A is a diagram showing a correlation between an adjustment gas composed of methyl mercaptan and an organ function φ test. Fig. 6B is a diagram showing a correlation between an adjustment gas composed of a mixed gas of methyl mercaptan and methane and an organ function test. Fig. 6C is a diagram showing a correlation between an adjustment gas composed of a mixed gas of methyl mercaptan and ethylene and an organ function test. Figures 7A to 7D show the results of the review of the mixing ratio of the adjusted gas. Figures 8A to 8D are graphs showing the results of review of the mixing ratio of the adjusted gas. Figures 9A to 9D are graphs showing the results of review of the mixing ratio of the adjusted gas. Fig. 10 is a timing chart for explaining the operation when adjustment is performed in accordance with an adjustment gas composed of methyl mercaptan alone. ® Fig. 11 is a timing chart for explaining the operation when adjustment is performed in accordance with an adjustment gas composed of a mixed gas of methyl mercaptan and ethylene. Brief description of drawing numbers 1 Battery power supply 2 Heater 3 Metal oxide semiconductor gas sensor 4 Liquid crystal display 6157pifl.doc / 015 (Unlined) 10 5 Microcomputer 6 EEPROM 7 Parallel voltage regulator 8 Reset 1C 9 Clock Oscillator 10 Connectors Cl ~ C3 Capacitor 548093 Detailed Description of the Preferred Embodiment FIG. 1 is a circuit diagram showing this embodiment. The main constituent elements of this embodiment include: a low-voltage (for example, 3V) battery power source 1 of a dry cell, a rechargeable battery, and the like; electrode terminals ① and ② connected to both ends of a heater 2 embedded in a gas sensor; metal oxidation The bio-semiconductor gas sensor 3, a 3-terminal structure connected to the output electrode terminal ③ at one end of the gas sensor, has a fast thermal response speed; liquid crystal display (hereinafter referred to as LCD) 4; microcomputer (microcomputer), will be carried out The heater 2 is energized and controlled by a device or a function of a detection device that detects the gas to be detected. The device is also equipped with an LCD4 drive function to control the entire device. EEPR0M6 is stored to determine the bad breath intensity standard. Unexpectedly. The metal oxide semiconductor gas sensor 3 has a resistance 値 between the output electrode terminal ③ of the gas sensing body and the electrode terminal ② connected to the ground side to the end of the heater 2, which is generated by contacting the gas with the gas sensing body. The internal heater 2 is connected to the battery 1 via a PNP transistor Q1. This 6157pifl.doc / 015 (Unlined) 548093 In addition, the gas sensor to the battery power supply 1, via the series circuit of PNP transistor Q2 and resistor R2, and the series circuit of PNP transistor Q3 and resistor R9 The parallel circuit is connected. When the transistor Q2 or Q3 or both are turned on (On), the current through the resistor R2 or R9 or the parallel circuit of the two resistors and the current flowing through the gas sensor is generated. The voltage Vs at both ends is taken into the input port (Port) I 1 of the microcomputer 5, and the microcomputer 5 calculates the resistance 气体 of the gas sensor from the voltage Vs at both ends. The microcomputer 5 has a power supply terminal V connected to the battery power supply 1 via a diode D1 and receives power supply. Connect the middle point of the series switch connected to the start switch SW φ of the battery power supply 1 and the resistor R5 to the input port I 2. If the input 璋 I 2 is at a high level, start the gas detection in accordance with the program. Control processing. The microcomputer 5 has: the midpoint is connected to the base of the transistor qi, and the output port 01 is connected to the other end of the series circuit of the resistors R3 and R4 connected to the + pole of the battery power source 1 and works through the output port 01 (Duty) The pulse signal for control turns transistor Q1 on and off to control the function of heater 2. Through this function, by extending transistor Q1's on duty, the metal oxide semiconductor is turned on. The gas sensor 3 is heated to a high-temperature state, and conversely, the heating control is performed as a low-temperature heating state by shortening. The output port 03 of the microcomputer 5 is connected to the bias circuit of the transistor Q2, and the output port 04 is connected to the bias circuit of the transistor Q3. By setting the output ports 〇3 and 〇4 to a low level, the base current flows. The corresponding transistors Q2 and Q3 are turned on, and the resistors R2 and R9 are connected between the resistance Rs of the gas sensor and the + pole of the battery power source 1. That is, it has the function of switching the load resistance. 6157pifl.doc / 015 (without underline) 12 548093 Microcomputer 5's output ports Oil ~ 014 are connected to LCD4's input terminals ID1 ~ ID4, and output ports 〇15, 〇16, 〇17, 018, 〇19, 〇20 Connect input terminals ID5, ID6 and ID7, ID8 and ID9, ID10 and ID11, ID12 and ID13, ID14 and ID15, and ID16 respectively. In addition, output port 〇2 is connected to the common terminal C0M1 of LCD4. Through output ports 011 ~ 〇20, 〇2 The drive signal output controls the character display of LCD4. 〇Microcomputer 5 is equipped with the voltage of the shunt regulators into the input port I 3. When the voltage of the shunt regulator 7 is higher than the regulation 値At this time, φ can detect the battery power failure detection function. The parallel voltage regulator 7 is connected to battery power source 1 through transistor Q2 and resistor R1 to stabilize the battery voltage at a predetermined voltage. The stable voltage is applied to the input At the same time, port I 3 monitors the battery voltage by its stable voltage, and can relatively detect the decrease in battery voltage. EEPR0M6 is a standard for registering the gas used to detect the object to be detected. During the inspection process of the device The resistance 値 R0 ′ of the gas sensor of the metal oxide semiconductor gas sensor 3 in a high-temperature state and the resistance 値 Rs when switching from a high-temperature state to a low-temperature heating state are respectively stored, and a ratio 两者 Rs / RO between them. Generally, this stored ratio is used as a reference for detecting the bad breath factor gas component concentration, which is suitable for the gas to be detected, which is the standard of bad breath intensity. EEPR0M6 has its data input terminal DI and serial clock terminal SR. The chip selector terminal CS is connected to the data output ports do, output ports 021, 022 of the microcomputer 5, and is pulled up by resistors R7, R8, and R6. In addition, the data output terminal D〇 6157pifl.doc / 015 (Unlined) 13 548093 Connected to the data input terminal di of the microcomputer 5. LCD4's input terminals ID1 to ID16 and common terminal COM1 are pulled up through resistors. When connected to common terminal COM1 and the word If any of the input terminals ID1 ~ ID16 corresponding to the element becomes low level, the characters corresponding to the input terminal will be displayed, ID1 ~ ID4 and the concentration of the gas component of the bad breath factor, respectively. The characters of bad breath intensity correspond to ID5 to ID16, which correspond to the characters representing the expressions of characters and the like on both sides of the character of the display density, and the higher the concentration of the gas component of the bad breath factor, for example, the stronger the expression. The reference number 8 is a reset signal of 1C applied to the microcomputer 5 when the power is turned on, and the reference number 9 is a reference clock to the microcomputer 5 clock oscillator. Reference numeral 10 is a connector for connecting the microcomputer 5 and the LCD 4. C1 ~ C3 series capacitors. Next, the operation of this embodiment will be described. First, when the battery power supply 1 is connected, the microcomputer 5 is reset by the operation of resetting 1C 8 and initial setting is performed. After that, the microcomputer 5 operates in a low-consumption mode and enters a standby state. In this standby state, the setting terminal AD] connected to the output field 03 of the microcomputer 5 is short-circuited with the ground, the start switch sw is turned on, and the input action starts when the input of the input switch I 2 rises to a high level. In the case of a signal, the microcomputer 5 becomes an operation state of the stylized adjustment mode in advance, and a pulse signal having a period of 8.2 m seconds and a low level period of 960 μs is generated from the output port 01, for example. Therefore, the transistor Q1 is turned on and off at an operating state of 960 // sec with a period of 8.2m seconds. During the on period, the heater 2 is supplied with power from the battery power source 丨. At this time, the average voltage applied to the heater 2 becomes approximately 1 · ον through the operation control 6l57pifl.dOC / 015 (without underline) 14 548093. Therefore, the heater 2 generates a large amount of heat, and the metal oxide semiconductor gas sensor 3 is heated to a high temperature state. On the other hand, the microcomputer 5 causes the transistor Q2 and Q3 (or only Q2 or Q3) to be turned on by the output ports 〇3 and 〇4 (or 03 or 04) at the turn-off timing of the transistor Q1 every 0.5 seconds. A parallel circuit (or resistors R2 or R9) composed of the resistances R2 and R9 of the load resistor is connected in series with the gas sensor of the metal oxide semiconductor gas sensor 3, and the gas sensor is energized through the load resistor. Therefore, at the timing when the transistor Q1 is turned off, 'the microcomputer 5 takes the voltage Vs across the gas sensor of the metal oxide semiconductor gas sensor 3 into the input 璋 I 1 and samples the voltage Vs across the gas sensor, Calculate the resistance 値 Rs of the gas sensor. At the same time, the ratio of the resistance 値 Rs obtained from the current sampling to the resistance 値 Rs' obtained from the previous sampling is calculated every 0.5 seconds. Then, at a high temperature, the adjustment gas (a gas in which methyl mercaptan of a sulfide group gas and ethylene of a hydrocarbon group gas are mixed at a mixing ratio of 1:10) is blown to the metal oxide semiconductor gas sensor 3. The resistance 値 Rs of the sensor will decrease. If the ratio of the resistance 値 Rs obtained from this sampling obtained every 0.5 seconds to the resistance 値 Rs' obtained from the previous sampling is less than 0.96, the microcomputer 5 will not detect air entanglement. # For example, from the time when the adjustment of the gas is detected for 1 second, the microcomputer 5 converts the low level period of the pulse signal output from the output 成 01 to 75 // sec. With the period unchanged, the transistor Q1 is working. In the state, it is regarded as 75 // seconds. Thereby, the average voltage applied to the heater 2 through the transistor Q1 is reduced to about 0.3 V, and the amount of heat generated by the heater 2 is reduced. Therefore, the metal oxide semiconductor gas sensor 3 shifts from a high temperature state to a low temperature state. When switching from a high temperature state to a low temperature heating state, and at the timing when the transistor 6157pifl.d0C / 015 (without underline) 15 548093 Q1 is turned off, the microcomputer 5 senses the gas of the metal oxide semiconductor gas sensor 3 The voltage Vs at both ends of the test body is taken into the input port I1, and the voltage Vs and the load resistance 値 and the power supply voltage 取 thus taken in are used to calculate the reference resistance 値 r of the gas sensor of the metal oxide semiconductor gas sensor 3. . During the transition period from the start of the transition to the low-temperature heating state until the resistance of the metal-oxide-semiconductor gas sensor 3 stabilizes, for example, after 2 seconds has elapsed and the transistor Q1 is turned off, the microcomputer 5 senses the metal-oxide semiconductor gas. The voltage Vs at both ends of the gas sensor of the detector 3 is taken into the input port I1, and the voltage Vs and the load resistance 値 and the power supply voltage 取 taken in from this are used to calculate the gas sensing of the metal-oxide semiconductor gas sensor 3 Body resistance 値 Rs. In addition, find the ratio RS / R0 of this resistance 値 Rs to the reference resistance 値 R0, and store both Rs and R0 as the reference 値 data in EEPROM6. This makes it possible to set a reference value for detecting the concentration of the halitosis factor gas component of the gas to be inspected in the halitosis inspection device. When the above-mentioned adjustment mode is completed, the microcomputer 5 returns to the standby state. Therefore, when the connection between the adjustment terminal ADJ and the ground is released and the start switch SW is turned on, the microcomputer 5 starts the detection operation in the normal operation mode. Next, the present embodiment of registering the above-mentioned reference data in the EEPROM 6 will be described, and the actual operation during the bad breath inspection will be described. As the battery power source 1 is connected, the microcomputer 5 is in a standby state. In this standby state, the start switch SW is turned on and the input port I 2 rises to a high level. After the initial processing of the microcomputer 5, the microcomputer 5 starts normal operation. The action produced by the pattern. First, the data registered in the EEPROM 6 is read out and stored in the built-in RAM, and a reference value 使用 for detecting bad breath intensity is set. 6157pif 1 .doc / 015 (underlined) 16 548093 If the normal operation mode is started, it is the same as that in the adjustment mode, microcomputer. 5 Self-output 璋 01 generates a pulse signal with a cycle of 8.2m seconds and a low level period of 960 // second . Fortunately, the transistor Q1 is turned on and off at 960 // s in an operating state with a cycle of 8.2m seconds. During the on period, the battery power source 1 supplies power to the heater 2 of the metal oxide semiconductor gas sensor 3 . As described above, the metal oxide semiconductor gas sensor 3 is set to a high temperature state. Therefore, for example, every 0.5 seconds, the microcomputer 5 samples the voltage across the gas sensing body at the timing of turning off the transistor Q1, and calculates the resistance 値 Rs of the gas sensing body. At the same time, the ratio of the resistance 値 Rs obtained from the current sampling to the resistance 値 Rs' obtained from the previous sampling is calculated every 0.5 φ seconds. When the breath of a person to be detected is blown to the metal oxide semiconductor gas sensor 3 at a high temperature, the breath includes water vapor or a gas component, so that the resistance 値 Rs of the gas sensor decreases. If the ratio of the resistance 値 Rs obtained at the current sampling time to the resistance 値 Rs' obtained at the previous sampling time is less than 0.96, the microcomputer 5 detects that the exhaled air is blown out. Here, the microcomputer 5 performs detection and judgment of the surrounding environment pollution (air pollution) immediately after detecting the above-mentioned exhalation, and stops the exhalation detection operation when the surrounding environment is detected as being polluted. That is, as shown in FIG. 2, the resistance 値 Rs of the gas sensor of the metal oxide semiconductor gas sensor 3 detected at the time of sampling immediately after the start of exhalation ta is obtained, and in the adjustment mode Perform the test and store the ratio of the reference resistance 値 R0 stored in EEPROM6. The obtained 情形 is smaller than the predetermined 値 (for example, 0.2) and the case with a rising tendency, that is, the case where the resistance 値 Rs is rising in the clean direction. It is determined that the detection of bad breath is in an impossible pollution state, the microcomputer 5 stops the detection operation, and returns to 6157pifl.doc / 015 (without underline) 17 548093. At the same time, the LCD 4 displays the air pollution state. Figure 2 shows the schematic diagram of this air pollution judgment. The curves A and A 'in the figure show the changes in Rs / R0 at the timing ta of the breath detection from a situation with little air pollution, and B is the Rs / The change of R0, C is higher than the degree of air pollution. The 値 display through the exhaled breath Rs / R0 indicates the clean direction, α indicates the limit of breath detection, and / 5 indicates the limit of air pollution detection. It is judged that the atmospheric pollution is good. The microcomputer 5 takes a certain time of, for example, 1 second from the exhalation detection, and the period is unchanged, the transistor Q1 is regarded as a pulse signal of 75 // s in the working state. The output port 01 outputs the temperature of the metal oxide semiconductor gas sensor 3 to a low-temperature heating state. At a certain point in the beginning of this transfer, the resistance 値 of the sampled gas sensor is taken as the reference resistance 値 R0 and stored in the built-in RAM, and then the resistance 値 Rs obtained by sampling with sampling every 0.5 seconds is calculated. Than Rs / R0 ,. Therefore, 'find the ratio of the calculated 値 calculated from the beginning of the low-temperature heating state transition at a certain time of 2 seconds to the reference 値 (Rs / R0) obtained in the adjustment mode' Bad breath intensity. LCD4 displays characters according to the bad breath intensity. After that, the microcomputer 5 returns to the standby state after a certain time elapses. The display of the LCD 4 is also turned off. Figures 3 and 4 show the transition state of Rs / R0 'starting from the moment when U of the start switch SW is turned on. Fig. 3 shows that Rs / R0 obtained from a certain time @ 2 seconds and a time t4, 値 is 25. Fig. 4 shows that Rs / RQ obtained at a certain time t4 after a lapse of 2 seconds from a certain time t3 is 8. In the case of Figs. 3 and 4, the reference Rs / for example 10 stored in EEPROM6 is shown in Fig. 3. As shown in Fig. 3, the Rs / R0 'ratio obtained at a time t4 is 6157pif 1 .doc / 015 (none (Underlined) 10 is judged to be bad breath when it is large, and as shown in FIG. 4, it is judged to have bad breath when the display is smaller than 10. The microcomputer 5 calculates the bad breath intensity based on the obtained 値 Rs / R0 'and the reference 値 Rs / R0, and displays characters corresponding to the bad breath intensity on the LCD 4. In the case of no bad breath, the corresponding characters are also displayed on the LCD 4. In addition, t2 in Figs. 3 and 4 indicates a certain point in the detection of exhalation. Through organ function test, grade 1: no halitosis can be felt, grade 2: weak halitosis can be felt, grade 3: bad breath is felt, grade 4: strong Q odor can be felt in 4-stage evaluation, and it is determined to belong to each grade For each of five persons and a total of 20 subjects, the ratio Rs / R0 of the resistance 値 of the metal oxide semiconductor gas sensor 3 in the halitosis inspection device, as shown in FIG. 5, each level 1 to 4 Judgment has error. That is, in order to appropriately detect the concentration of the Q-odor gas component with the halitosis inspection device, it is important to set the reference threshold in the adjustment mode. Therefore, for the five test subjects who were judged to belong to level 3 by organ function test, the adjustment gas was regarded as the monomer gas of methyl mercaptan alone, a mixed gas of methyl mercaptan and methane, and a mixed gas of methyl mercaptan and ethylene. The results of the study on the correlation between the test results obtained by the halitosis inspection device adjusted according to each adjustment gas and the organ function test are shown in Figs. 6A to 6C. In addition, the horizontal axis display levels in Figures 6A to 6C correspond to levels 1 to 4 of the organ function test described above. In the case where the adjustment gas is used as the monomer gas of methyl mercaptan alone, as shown in Fig. 6A, 'the correlation between the inspection result obtained by the bad breath inspection device and the organ function test is not good' is not practical. When the adjustment gas is used as a mixed gas of methyl mercaptan and methane, as shown in FIG. 6B, although it is better than the methyl mercaptan monomer, the correlation between the inspection result obtained by the bad breath inspection device and the organ function test ; 7pif 1 .doc / 015 underlined) 19 548093 The system is not good, which is not suitable for practical use. _ On the other hand, when the adjustment gas is used as a mixed gas of methyl mercaptan and ethylene, as shown in Fig. 6C, the correlation between the inspection result obtained by the halitosis inspection device and the device and official function test is very good, and it is judged to be sufficient Achieve practical standards. If the mixed gas of methyl mercaptan and ethylene is used as the adjustment gas, the correlation between the judgment and the organ function test is very good. Therefore, referring to FIGS. 7A to 7D, 8A to 8D, and 9A to 9D, Explain the results of the review on the mixing ratio of methyl mercaptan and ethylene. First, as shown in Fig. 7C, the bad breath inspection device adjusted by the adjustment gas φ mixed with 0.7 ppm of methyl mercaptan and 10 ppm of ethyl alcohol, although a very good correlation can be obtained with the test subjects of level 3, but The other levels 1, 2 and 4 are not well correlated. In addition, as shown in Figs. 8A to 8D, the bad breath inspection device adjusted by the adjustment gas of 0.7 ppm of methyl mercaptan and 3 ppm of ethylene showed that the test subjects of each level 1 to 4 did not have a good correlation. In this regard, as shown in Figs. 9A to 9D, the bad breath inspection device adjusted by an adjustment gas mixed with 0.7 ppm of methyl mercaptan and 7 ppm of ethylene can obtain a very good correlation between the subjects of each level 1 to 4. . Therefore, if an adjustment gas with a mixing ratio of methyl mercaptan and ethylene of 1:10 can be adjusted, a bad breath inspection device and an adjustment method thereof having a good correlation with the organ # function test can be realized. As described above, in the halitosis inspection device and the adjustment method thereof of this embodiment, since a mixed adjustment gas having a mixing ratio of methyl mercaptan and ethylene of 1:10 is used in the adjustment mode, a reference frame for performing bad breath inspection is set, so The correlation with organ function tests can be adjusted very well. Different from the conventional example of using only methyl mercaptan to adjust, it is not limited to periodontal disease, and it can detect short-term problems such as eating or smoking 6157pifLdoc / 015 (no underline) 20 548093 And / or various long-term fluctuations of the halitosis factor gas component can have the advantage that the halitosis inspection can be appropriately performed. In the present embodiment, the resistance change 'when exhaled breath is blown to the metal oxide semiconductor gas sensor 3 in a high temperature state is used as a trigger for the timing of transition to the low temperature heating state, which can make the timing of transition to the low temperature heating state Easy to decide. Therefore, in the case of using an adjustment gas composed of methyl mercaptan in the adjustment mode, as shown in Fig. 10, when the resistance obtained by the current sampling (at a certain time t3) obtained every 0.5 seconds 値The ratio of Rs to the resistance 値 Rs' of φ obtained from the previous sampling (at a certain time t2) is greater than 0.96, and the microcomputer 5 may not detect that the adjustment gas is blown out. In other words, the adjustment gas composed of methyl mercaptan alone will not trigger the timing of the transition from the high temperature state to the low temperature heating state, and there is a possibility that the adjustment cannot be performed normally. In this regard, if a mixed adjustment gas such as methyl mercaptan and ethylene in this example is used, as shown in FIG. 11, when the resistance obtained from the current sampling (a certain time t3) obtained every 0.5 seconds is obtained, The ratio of 値 Rs to the resistance 値 Rs' obtained from the previous sampling (at a certain time t2) is less than 0.96, and the microcomputer 5 can detect that the adjustment gas is blown out. In this way, when the adjustment gas passes through the use of a mixed adjustment gas of methyl mercaptan and ethylene, a timing trigger for the transition from the high temperature state to the low temperature heating state is bound to occur, which has the advantage of being able to be adjusted normally. 6157pifl .doc / Ol 5 (Underlined) 21