TW541357B

TW541357B - Method and device for chemical etching

Info

Publication number: TW541357B
Application number: TW90107821A
Authority: TW
Inventors: Yi-Jeng Wang
Original assignee: Yi-Jeng Wang
Priority date: 2001-03-30
Filing date: 2001-03-30
Publication date: 2003-07-11

Abstract

The present invention relates to a new chemical etching method, particularly a process method through which the etching quality and the etching rate are increased. The present invention provides a new chemical etching method, particularly a better etching method and device. The etching method substantially comprises: (1) installing an air nozzle on a rotary or conveyor-type spraying etching device; (2) the shape of the nozzle can be a flat shape, (3) the spraying direction is parallel to the etching surface as shown in Fig. 2; (4) the spraying is under intermittent control as shown in Fig. 3 and Fig. 4. The new etching method can increase the etching quality and the etching speed, and reduce the consumption of chemical and cleaning liquid; meanwhile, the method can be applied in a cleaning and drying process or a conveyor-type working platform, as shown in Fig. 5.

Description

五、.發明説明（）本發明係有關於一種化學蝕刻技術，特別是指一種飩刻方法，可以得到更均勻的蝕刻深度，更快的蝕刻速度。· · · \ . * • . ·: · · 、·. · ：·…·::·Ά < :··…：' ϋ用的S刻方法，··主褚可分爲兩大類㈠i沿用已久的濕式蝕嫌· . 刻-以液態的蝕刻液爲生。·(二)爲近代才使用的乾蝕刻一以氣態的 • · ’· ·· · ： . · · 蝕刻氣體或電漿爲主。’' . · • . .: .· · ，，一 · • * ' · · 9 *r ；；. - 而以濕蝕刻的頜域而言夂苛分爲(一泡在ti刻的为式粕(当)蔣倉虫: • . * ； * -• - · · · . - · .·,.·· ·.. · 涵液噴灑在飩刻商上的为式兩_主要：(厂浸泡式的濕蝕刻之優點大致是產量大、:費用低，缺點是鈾刻的品質稍 •(诘先«效背面之ίέ意事碩再填^本·χ)\ i釀，V. Description of the invention () The present invention relates to a chemical etching technique, in particular to an etching method, which can obtain a more uniform etching depth and a faster etching speed. · · · \. * •. ·: · · · · · ·: ···· :: · Ά <: ·· ...: 'The S-cut method used, ·· The main Chu can be divided into two major categories: Wet etching for a long time.. Etching-Living with liquid etching solution. (2) Dry etching only used in modern times. Gaseous. · · · · · ·:: · · · Etching gas or plasma. '' · · ·..: ··· ，， ·· * * · · 9 * r ；;-And for the wet-etched jaw area, it is severely divided (one bubble is etched at ti as the type meal) (When) Jiang Cangworm: •. *; *-•-· · ·.-·. ·,. ·· · .. · The spraying of the culvert on the seal maker is of two types. The advantages of wet etching are roughly large output, low cost, and the disadvantage is that the quality of uranium engraving is slightly better.

"V 經^部中央掠卒局另工消分合作<*:.印％差，而噴灑式的濕刻方式通常還配合與噴嘴有一相對運動的裝置·，如旋 • . . ·、 . · • · 齊搫爽带丄其主要目.昀晕爲提升鲑刻品質期待能：#更好的培勻度。 • ：然而不論是寖泡式或噴灑式的濕蝕刻，當產品的設計線寬縮子及飩刻深度加深時，都不再符芦蝕刻品質上的荽求，而面臨被乾式蝕刻取代的困境，業者爲製程需求也不得不使用設備昂貴、維護不易、蝕刻速度慢、耗能·、耗材大、甚至還有金屬污染問題及無法選擇性蝕刻的缺點等等的乾鈾刻。 η，τ 乂：-，：·二二':·'，·：：------二-----二一·>,·，〆·一二，(Γ: B7 五、發明説明（）本發明爲達好的蝕刻品質及快的蝕刻速度，所採用的裝置及方法茲配合圖式，詳細說明如下：首先參閱’. * • · . · · * .. / ： · - ; · : · : •第一圖係本發明i系統架構圖，‘ .· v：- *第二圖爲噴嘴與加工品之相關位置示意圖，‘ 第三圖爲選轉式的加工方式下之局部設備示意圖G •第四圖爲主要製造流程，：.、· . v ; ::::···第五圖爲輸送帶式的加工方式下之局部設備示意_··'? i·.【圖·號說明〕· 乂； / . .:¾" V The Central Bureau of Rapporteurs Bureau of the Central Bureau of Rapporteurs has a separate work and cooperation < * :. India% difference, and the spray-type wet engraving method usually also cooperates with a device that moves relative to the nozzle. · · · Qi Qi Shuang Zhuang 丄 its main purpose. To improve the quality of salmon engraving, we are looking forward to: # Better training uniformity. •: However, no matter whether it is immersion or spray type wet etching, when the design line width shrinker and the engraving depth of the product deepen, it no longer meets the requirements of reed etching quality and faces the dilemma of being replaced by dry etching. For the needs of the process, the industry also has to use dry uranium engraving, which has expensive equipment, difficult maintenance, slow etching speed, energy consumption, large consumables, and even the problem of metal pollution and the inability to selectively etch. η, τ 乂:-,: · Two two ': ·', · :: ------ Two ----- Two one · >, ·, · One two, (Γ: B7 five, Description of the invention () The device and method used in the present invention to achieve good etching quality and fast etching speed are described in detail with the following drawings: First, please refer to '. * • · · · · * .. /: ·- ; ·: ·: • The first picture is the architecture diagram of the i system of the present invention, '. · V:-* The second picture is a schematic diagram of the relevant position of the nozzle and the processed product, and the third picture is the rotary processing method. Schematic diagram of local equipment G • The fourth diagram is the main manufacturing process :: ,,. V; :::: ... The fifth diagram is the schematic diagram of the local equipment in the conveyor processing mode _ · '' i i. [Picture · No.] · 乂; /..: ¾

···· ν· · . ·· .......- - * · · * * · ·.T ·· · . · - ·. **·?. >J %...... - · *-··· ····‘-_ 丫控制單元10 . : : … ："Κ· :· , ·、-_'· ' : · :·. . U'· - 蝕刻單元 2〇 . :r: : ,·，·- .'..7. 'r*V ' ·- · * :·、·：- - - W: ::•蝕刻工件 21 . . * 氣流噴嘴41 ；噴灑元件31 . ：；{ 夾角25 . . : · • Λ· ♦ 飩刻液供給單元30 氣流供給單元40 ·*· - · ·..· / * 爲主要製造流程依序將本發明的製法程序及操作步驟依序載明如后· · f纸张尺度適/Π中H囚家標半（C；NS) Λ4说垮 % % Ψ， •J' & -r. :货-rsnlviixl^^uir 員r-,'.5y<n-4rri.:p?:v.··· ν · ·. ·· .......--* · · * * · · .T ·· ·. ·-·. ** · ?. > J% ..... .-· *-····· '-_ 丫 Control unit 10.::…: &Quot; Κ ·: ·, ·, -_' · ': ·: ·.. U' ·-Etching Unit 2〇.: R::, ·, ·-. '.. 7.' R * V '·-· *: ·, ·:---W: :: • Etching workpiece 21.. * Airflow nozzle 41; Spraying element 31.:; {Included angle 25..:: • Λ · ♦ Engraving liquid supply unit 30 Air flow supply unit 40 · * ·-· · ../ / * is the main manufacturing process in order to sequentially process the manufacturing method of the present invention And the operation steps are described in order as follows. · F paper size is appropriate / Π in the H prison family mark half (C; NS) Λ4 said %% Ψ, • J '& -r.: 货 -rsnlviixl ^^ uir R-, '. 5y < n-4rri.: P?: V.

M1符部中央標毕局負工消費合作社印¾ 五、發明說胡（) [發明詳細說明〕參考第一圖爲顯示本發明化學蝕刻製程之系統架構圖，其包括一控. 制單元10、一飩刻單元20、一蝕刻液供給單元30及氣流供給單元40。； . · ， - _ , :- •該控制單元10係具有可fe式化之電子裝置，並透過1/入本發明之製程· 的各個參繫，而進行控制該蝕刻單元2〇、該蝕刻液供給單元30及該氣流供給單元40之作業程序；該蝕刻單元叩係提供一適當設備作爲蝕刻工件之加工環境，該設備需配合該蝕亥[]液供給單元30及該氣流供給單ί • 元必之裝配方式而設計·，且該設橋申真宥=¾摈姓亥蕖$ 平台；該蝕刻液供給單元30主要係一可供給蝕刻液之裝置，該裝置中一: • · ·' 具有分別可調節蝕刻液流量及蝕刻液開關之流量閥與電磁閥開關，且該二流量閥與該電磁閥開關各自可透過該控制單元之控制，而達到其分調' 節蝕刻液流量及蝕刻液開關之功能:； * 該氣流供給單元40主要係一可供給噴射氣流之裝置，該裝置中具宥奋別可調f酸射氣溘流量及_射氣流開關乏流畺閥與亀磁崗開關，·且· 該流量閥與該電磁閥開關各自可透過該控制單元之控制，而達到其分別調節噴射氣流流量及噴射氣流開關之功能。.··· · 前述之蝕刻單元20中提供蝕刻工件加工的作業平台具有旋轉該蝕刻工伶之旋轉裝置，或是移動該蝕刻工件的輸送帶，而前述之控制單元 10可輸出適當的控制信號控制該位置控制元件或該速度控制元件。因本發明主要之倉[J意在於側向氣流產生之特殊瞬間局部真空之交戈應如圖二所示，以下僅就旋轉作業卒台之加工方式詳細說明之。前述之控制單元10可輸出適當的控制信號，以控制該蝕刻液供給M1 Charcoal Central Standard Bureau Completed Work Consumption Cooperative Print ¾ V. Inventor Hu () [Detailed Description of the Invention] Reference is made to the first diagram showing a system architecture diagram of the chemical etching process of the present invention, which includes a control unit. 10 、 An engraving unit 20, an etchant supply unit 30, and an airflow supply unit 40. ;.,,-_,:-• The control unit 10 is provided with an electronic device that can be fe-typed, and controls the etching unit 20 and the etching through various parameters 1 / into the process of the present invention. The operation procedures of the liquid supply unit 30 and the air supply unit 40; the etching unit does not provide a suitable equipment as a processing environment for the etching workpiece, and the equipment needs to cooperate with the etching liquid supply unit 30 and the air supply unit. Yuan Bi's assembly method is designed, and the bridge is set up 宥 = ¾ 摈 surname Hai 蕖 $ platform; the etchant supply unit 30 is mainly a device that can supply etchant, one of the devices: • · · ' A flow valve and a solenoid valve switch which can respectively adjust the flow rate of the etching solution and the switch of the etching solution, and the two flow valves and the solenoid valve switch can each be controlled by the control unit to achieve the division of the flow rate of the etching solution and the etching The function of the liquid switch: * The air supply unit 40 is mainly a device that can supply the jet air flow. The device has an adjustable f-acid jet gas flow rate and a jet flow switch. Switch, and the flow Each of the valve and the solenoid valve switch can be controlled by the control unit to achieve the functions of adjusting the jet flow rate and the jet flow switch respectively. ... The above-mentioned etching unit 20 provides an etching workpiece processing platform with a rotating device for rotating the etching worker, or a conveyor belt for moving the etching workpiece, and the aforementioned control unit 10 can output appropriate control signals. Control the position control element or the speed control element. Because the main position of the present invention [J means that the special instantaneous partial vacuum generated by the lateral airflow should be crossed as shown in Fig. 2, the following only details the processing method of the rotary operation platform. The aforementioned control unit 10 can output an appropriate control signal to control the supply of the etchant

鲑濟部中夬標準局員工消费合作社印製五、奋明説明（）單元30中流量閥之流量大小與電磁閥開關之開啓或關閉。 .前述之控制單元10可輸出適當的控制信號，以控制該氣流供給單 ^ ^ * •元40中流量閥之流量大小與電磁閥開關之開啓或關閉。： . · · : · · · · · ·:… - 參考第三圖爲顯示本發明化.學蝕刻製程之系統局爺設備示意圖，其中，該蝕刻單元20中具有π提供該蝕刻工件21加工的作業平台。另外，該蝕刻液供給單元30及該氣流供給單元'40分別具有可噴灑蝕刻液之一噴灑元件31及可供應噴射氣流之一氣流噴嘴41，且該噴灑元件麥及該· …· ‘之_設；方式皆葆配合_鈿土# 21 έ蝕刻加工方· •.前述之蝕刻單元2〇中提供蝕刻工件加工的作業平台具有旋ip蝕刻工件之旋轉裝置(圖中未顯示），·使得本發明製程中待進行蝕刻&T之 •一蝕刻工件21會受該旋轉裝置夾持並驅動旋轉。· 舉 • · · - .： v ；-： . 前述之噴灑元件31具有適當的蝕刻液灑出開口；使得該噴灑元件 31噴灑蝕刻液之壓力會隨著該蝕刻液供給單元30供給的蝕刻液流量增 ' · . · · ·· · . · · · . ·- · · · * * *.····. ·· 加或降低。 . •前述之噴灑元件31可以係複數個，且配合該蝕刻元件之蝕刻加工 • * 表面而以適當的排列方式裝設。前述之噴灑元件31可以係複數個，且可分別提供各種餓刻液：緩衝劑或淸洗用水，作爲該触刻元件進行飩刻加工或淸洗之製程使用。前述之噴嘴41可以係複數個，並酉3合該蝕刻元件之蝕刻加工表面而以適當的排列方式裝設，且各個嘴41與該輔助線23的夾角25可依照實際需要而調整。Printed by the Consumer Cooperatives of the Zhongli Standard Bureau of the Ministry of Salmon and Veterinary Medicine 5. Fenming Instructions () The flow rate of the flow valve in unit 30 and the opening or closing of the solenoid valve switch. The aforementioned control unit 10 can output an appropriate control signal to control the air supply unit ^ ^ * • The flow rate of the flow valve in element 40 and the opening or closing of the solenoid valve switch. ： · ·:: · · · · · · ::--Refer to the third figure for a schematic diagram of the system equipment of the chemical etching process of the present invention, wherein the etching unit 20 has a π provided for processing the etching workpiece 21 Operating platform. In addition, the etchant supply unit 30 and the airflow supply unit '40 respectively have a spray element 31 capable of spraying an etchant and an airflow nozzle 41 capable of supplying a spray gas, and the spray element and the ... Design; methods are all coordinated _ 钿土 # 21 蚀刻 etching process side • •. The operating platform provided in the aforementioned etching unit 20 for etching workpiece processing has a rotating device (not shown in the figure) that rotates the etching workpiece, making this An etching workpiece 21 to be etched during the invention process will be clamped by the rotating device and driven to rotate. · · · ·-.: V;-:. The aforementioned spraying element 31 has an appropriate etchant discharge opening; so that the pressure of spraying the etchant by the spraying element 31 will follow the etchant supplied by the etchant supply unit 30. Flow increase '· · · · · · · · · · · · · · · · * * *. ······· Increase or decrease. • The aforementioned spraying elements 31 may be a plurality of, and are arranged in an appropriate arrangement in accordance with the etching process of the etching element. The aforementioned spraying elements 31 may be plural, and may provide various kinds of hungry engraving liquids: buffers or washing water, which are used as a process of engraving processing or rinsing of the touching elements. The aforementioned nozzles 41 may be a plurality of nozzles, and the etching processing surfaces of the etching elements may be combined to be installed in an appropriate arrangement. The angle 25 between each nozzle 41 and the auxiliary line 23 may be adjusted according to actual needs.

:a'\. 赶济部中央標準局天工消費合作社印裂 A7 B7 五、發明說-明（) '前述之氣流噴嘴41具有適當的氣流噴射開口，使得該氣流噴嘴41 噴射氣流之壓力會隨著該氣流供給單元40供給的氣流流量ί曾加或降低。 ®前述之氣流噴嘴41出口方向與平行該飩刻工件21之加工面的輔助線 ' . * . · ·… ：、 23間形成一夾角25，該夾角25之角度可以係水平的。· ®前述之氣流噴嘴41之_口形狀可以係扁平狀。 ®前述之氣流供給單元40所供給之氣流可以係氮氣(Ν2ω)。參考第四圖爲顯示本發明化學蝕刻於旋轉卒台製程時之方法流 •’程_，萁係指二次完整之蝕亥_|呈·。·步驟5〇1·係將待進行I虫·α；χ之.… .蝕刻工件21裝設在該蝕刻皐元20中的蝕刻作業平台上；.步驛係利用該蝕刻單元20中的旋轉裝置夾持該蝕刻工件21後，再透過該控制單元10的控制而驅動該旋轉裝置並帶動該餓刻工件21旋|| ;步驟.· 503係透過該挥制單兀1〇控制該鈾刻液供給單元3〇中的流量閥及電 •磁閥開關而噴键出適當且適量的蝕刻液後，在適當時間即停止噴灑蝕 ’翻液’而該蝕亥lj液在此期間皆會進行該蝕刻工丨杨的餘_肛;步驟504係在步驟503中開始噴灑蝕刻液而經過〈t。〉單位時間後，透過该控制單兀10控制該氣流供給單元4〇中的流_及電磁閥開麵嘖射出適當且適量的氣流，並利用該氣流將該餓刻工件21中触刻加工，面上的麵液體帶離該表面；步驛505係經過適當時間後，透過該控卓元10控础該氣流供給卓π 4〇中的流量閥及電磁閥開關而停止噴射氣流麵繼f纖転到製程所 p又疋之女求的日寸間〈Γ〉’右未達到該時間⑺，則刚步騷5〇3繼續執行，若已達麵時間⑺，則至下—步驟5〇7繼續執行；步驟5〇7 係透過該糨憚元賴_粒魏题需魏纖滅顧液，請先 M- 背意再：裝 m' ·. Ιί:訂: a '\. A7 B7 printed by the Tiangong Consumer Cooperative of the Central Standards Bureau of the Ministry of Assistance V. Invention-Ming ()' The aforementioned airflow nozzle 41 has an appropriate airflow ejection opening, so that the pressure of the airflow nozzle 41 will eject the pressure of the airflow. The flow rate of the airflow supplied by the airflow supply unit 40 has been increased or decreased. ® The exit direction of the aforementioned airflow nozzle 41 and the auxiliary line parallel to the machining surface of the engraved work piece 21.....: 23 form an included angle 25, and the angle of the included angle 25 may be horizontal. · The mouth shape of the aforementioned air flow nozzle 41 may be flat. The airflow supplied by the aforementioned airflow supply unit 40 may be nitrogen (N2ω). Referring to the fourth figure, the method flow of the chemical etching of the present invention during the process of the rotary platform is shown as "process_", which means the second complete etching process. · Step 501 · The I insect to be carried out · α; χ ... The etching workpiece 21 is set on the etching operation platform in the etching unit 20; the step system uses the rotation in the etching unit 20 After the device clamps the etching workpiece 21, it drives the rotating device through the control of the control unit 10 and drives the hungry workpiece 21 to rotate. |; Step 503 is to control the uranium carving through the waving unit 10 After the flow valve and the electric / magnetic valve switch in the liquid supply unit 30 are switched on and the appropriate and proper amount of etching solution is ejected, the spraying of the etching liquid is stopped at the appropriate time and the etching liquid will be carried out during this period The etcher Yang's anus; step 504 starts spraying the etchant in step 503 and passes <t. 〉 After a unit of time, the flow in the air supply unit 40 is controlled by the control unit 10 and the opening of the solenoid valve 啧 emits an appropriate and appropriate amount of air, and the air is used to touch-process the starved workpiece 21, The surface liquid on the surface is taken away from the surface; after a proper time, the step relay 505 stops the jet flow through the flow valve and the solenoid valve switch in the air flow supply control valve 10 to control the flow of the air flow.転 To the day of the woman asked by the manufacturing process <Γ> 'The right has not reached this time ⑺, then just follow the step 503 and continue to execute, if the face time ⑺ has been reached, go to the next step 507 Continue to execute; Step 507 is through the 糨惮元赖 _ 粒魏 Title requires Wei Xian Mi Gu liquid, please M- intent and then: Install m '·. Ιί: Order

五、奋明说明 Β7 經濟部中央榡毕局負工消费合作社印裂若需S換淸洗液或蝕刻液，則進行更換所需之淸洗液或蝕刻液並回到步驟503繼續執行，若不需更換蝕刻液，則可至下一步驟508繼續執行；步驟508係透過該控制單元10停止該蝕刻單元20中蝕刻作業平，台的旋轉，並可將完成蝕亥咖Π：之蝕刻元件21取出。、 ... 前述步騷503中可利用蝕刻液供給單元30之複數個噴灑元件中擇一 ·"· 供給噴灑緩衝劑或清洗液，以配合該蝕刻反應或淸洗製程之需要。前述步驟507也可選擇利用該蝕刻液供給單元30供給嘖灑淸洗用水、而使痦該歩驟503故爲進行該蝕刻工件2Ϊ•加I表面乏清㈤Μ且苒、透過步驟506決定淸洗次數。 ·/ 本發明所根據的原理爲利用高速氣流通過蝕刻品表面的製程方式，由於速氣流所產生的相壓差(詳柏努利定理），會將深坑內(Deep trench)的 .琴留.样刻液或賴粒.、雜質吸出，.而換；\新的蝕刻液或淸洗液寧轉燥氣體，而製程中所設針間隔式的噴流次數即代表更換新蝕刻液的次數。在分析蝕刻原理的機制上，原本僅能利用緩慢的擴散原理所進行的深坑蝕，改爲直換更換蝕刻液的快速化學蝕刻/' · 比較現有的旋轉式噴灑設備所生產的產品，雖然快速旋轉在遠離軸心處 • 、 · · · · . 或有少量更換蝕刻液的功效，但蝕刻率，隨與軸心距離的不同而不同，而且在深坑蝕刻中，仍然無法滿足產品之需求，由旋轉產生的相對速度’遠低由噴嘴所噴出的氣流速度而由旋轉產生更換蝕刻液的能力，當然遠低於噴流的能力。 ·V. Fenming Note B7 If the printing of the cleaning agent or etching solution needs to be replaced by S7, the central government bureau of the Ministry of Economic Affairs of the Ministry of Economic Affairs will change the cleaning agent or etching solution and return to step 503 to continue execution. Without the need to change the etching solution, it can be continued to the next step 508; step 508 is to stop the etching operation in the etching unit 20 through the control unit 10, and the rotation of the stage, and can complete the etching element of the etching etcher: 21 Take it out. ... In the foregoing step 503, one of the plurality of spraying elements of the etching liquid supply unit 30 may be used. &Quot; · Supply a spraying buffer or a cleaning liquid to meet the needs of the etching reaction or the cleaning process. In the foregoing step 507, it is also possible to use the etching solution supply unit 30 to supply the washing and washing water, so that the step 503 is performed for the etching workpiece 2. The surface is not clear, and the washing is determined through step 506. frequency. · / The principle on which the present invention is based is a process that uses high-speed airflow to pass through the surface of the etched product. Due to the phase pressure difference (detailed Bernoulli's theorem) generated by the high-speed airflow, the deep trench will be trapped inside. Sample etching solution or lye particles, impurities are sucked out, and replaced; \ new etching solution or cleaning solution rather than dry gas, and the number of needle interval jets set in the process represents the number of replacement of new etching solution. In the analysis of the mechanism of the etching principle, the deep pitting that could only be performed by the slow diffusion principle was changed to a fast chemical etching with direct replacement of the etching solution / '· Compared with the products produced by the existing rotary spray equipment, although Quickly rotate away from the center of the shaft •, · · · ·. Or there is a small effect of changing the etching solution, but the etching rate varies with the distance from the center of the shaft, and in deep pit etching, it still cannot meet the needs of the product The relative speed 'by rotation' is much lower than the speed of the airflow sprayed by the nozzle and the ability to change the etchant by rotation is of course much lower than the ability of the jet. ·

ν紙仏尺/义適/η屮囚国家標卒（CNS)八说格（2丨0>(297公釐ν Paper ruler / Yi Shi / η 屮 Prisoner National Standards (CNS) octave (2 丨 0 > (297mm

經濟部令夬榡毕局負工消費合作社印裝五、發明説胡（) .綜上所述，藉本發明業者可用更低廉的生產成本，製造符合需求的蝕刻品質，又能節省能源及耗材，有利於環保需求，其進步性及具產業利用之債値，誠已合乎發明專利之要，謹愛’ 依法_出專利申請。· ·. ‘本發明之特點一爲厂種蝕刻及淸洗之技術，其利用原理爲 1利用平行於加工工件表面的高速氣流、.來更換滯流在深坑內反應過的殘液。 —· '·_ -·，、···_: ._.····.* ·· · . - · · ，·：·· ' · 、··、，_··:; · · ·» v :。·· · V::… .. • ϋ製程設定上，使用間歇式的噴流士或來更換飪亥！j液··，而在緣；晴裝簷··· 土的與工件加工表面平行的噴嘴，加上可程式自動控制的氣閥、_嘴及1 •氣流與蝕刻面的夾角設計爲0° - Θ ^30°。：. . .本發明之特點，可以歸納如下_:· . -* ' ；： r .1· •蝕刻速度快而且穩定一本發明之系統中透過該控制單元、該蝕刻 •液供給單元岌該氣流供給單元可進衍拯制触亥彳被的反應時_和維捧紬刻液處於適當的濃度，使本系統達到連續性快速蝕刻之化學反應，同時· 可迅速終止蝕刻反應(Etching Stop)避免傳統濕式_刻製程中蝕刻時間控制不當而導致過度蝕刻的現象等問題。 .2··細微線寬精密加工一本發明之系統中透過該控制單元、該淸洗液供給單元及該氣流供給單元可進行控制淸洗液淸洗深坑內的殘酸和雜質，使本系統達到清洗微小尺寸之圖案(Device)，同時可吸出深坑內的水分使整個工件直接乾燥而不致導致不當的氧化現象等問題，對於現今次微米软，祭米級產品之濕製程具有特殊的效果。Printed by the Ministry of Economic Affairs of the Bureau of Work and Consumer Cooperatives. V. Inventor Hu (). In summary, the inventor can use the lower production cost to produce etching quality that meets the needs, and can save energy and consumables. It is conducive to environmental protection needs, and its progress and debts with industrial use have been in line with the requirements of invention patents, and we love to issue patent applications in accordance with the law. · ·. The feature of the present invention is a kind of etching and cleaning technology in the factory. Its utilization principle is: 1. The high-speed air flow parallel to the surface of the workpiece is used to replace the residual liquid that has reacted in the deep pit. — · '· _-· ，， ··· _: ._. ····· ** ·· ·.-· ·, ·: ·' ',, ·· ,, _ ·· :; · · · · »V:. ·· · V ::… .. • ϋ For the process setting, use intermittent sprayer or change cooking! j 液 · ，，在缘； Sunlight eaves ··· The nozzle of the soil parallel to the workpiece processing surface, plus the programmable automatic control valve, _ mouth and 1 • The angle between the air flow and the etching surface is designed to 0 ° -Θ ^ 30 °. :... The characteristics of the present invention can be summarized as follows _: ·.-* ';: R .1 · • The etching speed is fast and stable. In the system of the present invention, the control unit, the etching liquid supply unit, etc. The air supply unit can make the reaction time when the blanket touches the blanket__Weihuan engraving solution is at an appropriate concentration, so that the system achieves a continuous and rapid chemical reaction, and at the same time, it can quickly stop the etching reaction (Etching Stop) Avoid problems such as over-etching caused by improper control of etching time in traditional wet-etching process. .2. Fine line width precision machining—In the system of the present invention, the control unit, the washing liquid supply unit, and the air flow supply unit can be used to control the washing liquid to wash the residual acid and impurities in the deep pit, so that The system achieves cleaning of small-sized patterns (Device), and at the same time can absorb the moisture in the deep pit to directly dry the entire workpiece without causing improper oxidation and other problems. For the current micron soft, rice-grade product wet process has a special effect.

五、.發明説明（） 3. 精確控制化學蝕刻反應一本發明之系統利用該閒歇性的側向氣流供給製程方式，是利用流體力學中的白努力定理產生之特殊瞬間局部真空之效應，於特定的時間快速的更換滯留於該ή刻工件加工表面凹陷 .處殘留的液體並補入新的化學品'因此使濕式的化學触刻製稈中具有更 • ·· · · · 精確控制化學蝕刻反應之能力。 / 寧 ··· 、 * 4. 結省蝕刻或淸洗用之化學品-Τ本發明之系統利用該閒歇性的側，V. Description of the invention () 3. Precisely controlling the chemical etching reaction-The system of the present invention utilizes the restful lateral air supply process method, which is a special instantaneous partial vacuum effect produced by the white effort theorem in fluid mechanics, Quickly change the stagnation on the machining surface of the workpiece at a specific time. Residual liquid at the place and fill in new chemicals'. Therefore, the wet chemical contact stalk has more precise control. The ability of chemical etching reaction. / Ning ···, * 4. Save the chemicals used for etching or cleaning -T The system of the present invention uses this idle side,

• · . · · V 向氣流供給製程方式，是利用流體力學中的白努力定理產生之特殊間』 .·;部离空之效應，更舉了凹陷區昀他琴昴使釋新的製程用化學品輕易昀·:ι 補入凹陷區內而不必耗費大量的化學品用來獲得到好的均勻性j: ^ • ·.· · · . . ·，蠢-· .5. 耗能少唯有利環保的產品一本方法主要的使用能源爲一轉動馬! · · * , 達及壓縮空氣，力Π上高效率的功能，相對於現今的淸洗或蝕刻製程耗能.丨 . . . . · 減少很多。 ‘ . - · · · # •. 雖然本發明.已以一具體實施评埽露如上，.然其並非·用以.限寧本寧.、· ·:?···曰y·;.任命熟悉此僉ii'，·在不之更動與潤飾，因此本發明之保護範圍當視後附之申請辱利範圍所界定者爲準。 _. ·· · Μίδ*部中夹標华乃$工消介合作；<*-^-5: f:ir 广十· • -a S··--'• · · · · The process method of supplying V to the air flow is a special space produced by the white effort theorem in fluid mechanics. Chemicals can easily be replenished: ι can be replenished into the depression area without having to expend a large amount of chemicals to obtain good uniformity j: ^ • ··· · ·.. ·, Stupid-· .5. Low energy consumption Products that are environmentally friendly-The main energy source of this method is a rotating horse! · · *, Which achieves compressed air and high-efficiency functions, which consumes energy compared to current cleaning or etching processes....... · Reduced a lot. '.-· · · # •. Although the present invention has been evaluated as described above with a specific implementation, it is not intended to be used. Familiar with this 佥 ii ', · In the future, change and retouch, so the scope of protection of the present invention shall be determined by the scope of the attached application for derogation. _. ·· · Μίδ * Ministry of China's Ministry of Finance and Standardization, Hua Nai $ Industry and Consumer Cooperatives; < *-^-5: f: ir 广十 · • -a S ··-'

JX* V ? *JX * V? *

Claims

申請利範圍：拟粗-9 ·曰 1、一種化學蝕刻及淸洗、乾燥的製程方法’該方法至少包含下列步驟： .· _ (a) 將待進行独亥[j或清洗、乾燥加工之蝕刻工件裝設在該蝕刻或淸洗、乾燥單元中的餓刻或淸洗·、乾燥作業平台上； (b) 透過該控制單元控制該餓刻液供給單元中的流量閥及電巧閥開關而噴灑出適當且適量的化學辑後，..存縛掌時W即停止噴灑化學鈕;一. -· · ; .... · ‘.· · - · . - · ' ' :;Γ · (c) 在步驟⑹中闕始噴灑化學液而經過適當的時間後，透過控制 _元控制該氣流供給單元Φ的流量閥及電磁閥開關而噴射出遍當且鍾量的氣流，並利用該氣流將該蝕刻或淸洗、乾燥工件中加工面上級凹陷區內的殘餘液體帶離p表面；.·' 丨 \ IScope of application: Pseudo-coarse-9 · 1. A method of chemical etching, washing, and drying 'The method includes at least the following steps:. · _ (A) To be subjected to a separate process [j or cleaning, drying, processing The etching workpiece is installed on the etching or rinsing, drying, or drying operation platform in the etching or rinsing and drying unit; (b) controlling the flow valve and electric valve switch in the engraving liquid supply unit through the control unit; After spraying an appropriate and appropriate amount of chemical series, the chemical button is stopped when the palm is restrained; a.-· ·; .... · '. · ·-·.-·' ':; Γ · (c) After the appropriate time has elapsed after the chemical liquid was sprayed in step (i), the flow valve and the solenoid valve of the air supply unit Φ are controlled by the control unit to eject a large amount of air flow, and use the The airflow removes the residual liquid from the upper depression area on the processing surface of the etching or rinsing and drying workpieces from the p surface ;. '' 丨 \ I

中in

| .£ 消合作 (d) 經過適當時間後，透過該控制單元控制該氣流供給單元中的流 •'量閥及電磁閥開關而停止噴射氣流;· 、：： · . ： · (e) 透過該控制單元停止該蝕刻或淸洗、琴燥單元中蝕刻或淸洗、乾燥作業平台的運動。 · · 2 '依據專利申請範圍第1項所述之化學蝕刻或淸洗、乾燥的製程方法’進一步包含一步驟，透過該控制單元判斷步驟⑹至⑹蝕刻次數是否達到製程所設定之要求的重複次數，若未達到該重複次數，則回到步驟 (b)繼續執行，若已達到該重複次數，則可至下一步驟繼續執行。 3 '依據專利申請範圍第1項所述之化學蝕刻的製程方法，進一步包含 S歩驟，透過該控制單元判斷步驟⑹至⑹蝕刻次數是否達到製程所設定|. £ Co-operation (d) After an appropriate time, the control unit controls the flow in the air supply unit through the control valve and solenoid valve switch to stop jetting air flow; · · :: · ·:: (e) through The control unit stops the movement of the etching or rinsing, etching or rinsing, drying operation platform in the piano drying unit. · 2 'According to the method of chemical etching or rinsing and drying according to item 1 of the scope of patent application', it further includes a step through which the control unit judges whether the number of steps ⑹ to ⑹ has reached the repeat requirement set by the process If the number of repetitions has not been reached, return to step (b) to continue the execution. If the number of repetitions has been reached, continue to the next step. 3 'According to the chemical etching process method described in item 1 of the scope of patent application, it further includes S step, and the control unit determines whether the number of steps ⑹ to ⑹ has reached the set number of processes.

0 -210 X 297^.¾ λ . '中請專利範園之要求的重複次數，若未達到該重複次數，則回到步驟(b)繼續執行，若已達到該重複次數，則再次透過該控制單元決定是否需裒換fa刻液或淸洗液，若薷更換蝕刻液或淸洗液，則進行更換所需之蝕刻液或淸洗液並回到步驟⑹繼續執行.，若不需Η換蝕刻液，則可罜下一步驟繼續執行。 4、一種化學蝕刻或淸洗.、乾燥的製程系統，其至少包含： —控制單元，其係具有可程^化之電子裝置，並透過輸入. 本發明之製程的各個參數，而進行控制製植中各單元之作業程I ,, β · · · . ' '· · ' · · '、·：、·:·.'::*:· 4 · ' ，- . · · . ，、· ·、 ·，'··'.....'·，：·、 · ··:.:· -·.·.· ··*··*·· ·· · . .· · * · · · · • · -/ 一蝕刻或清洗\乾燥單元，其係提供一適當設備作谭蝕刻1 或清洗、乾燥工件之加工環境，且真有一提供蝕刻或清洗、乾燥工件加工的作業平台·； ' : 聲 * . · 一蝕刻液或淸诜液供給單元，其係一可供給蝕刻液或淸洗 .•液之裝置，·該裝置中具有分別可調節蝕刻液流量及蝕刻液或淸、-. · ·. · · ...... · :·.····. * ... ...... . 洗液開關之流量閥與電磁閥開關，且該流量閥與該電磁閥開關癀各自可透過該控制單元之控制，而達S1其分別調節化學液流量及化學液開關之功能；： * 一氣流供給單元，其係一可供給噴射氣流之裝置，該管路 * > « » 中具有分別可調節噴射氣流流量及噴射氣流開關之流量閥與電磁閥開關，且該流量閥與該電磁閥開關各自可透過該控制單元之控制，而達到其分別調節噴射氣流流量及噴射氣流開關之功能；· · 、0 -210 X 297 ^ .¾ λ. 'The number of repetitions required by the patent fan garden is requested. If the number of repetitions is not reached, then return to step (b) to continue execution. If the number of repetitions has been reached, go through the The control unit determines whether it is necessary to change the fa etching solution or cleaning solution. If it is necessary to change the etching solution or cleaning solution, then replace the required etching solution or cleaning solution and return to step ⑹ to continue. If not required, Change the etching solution, and then continue to the next step. 4. A chemical etching or rinsing. Drying process system, which includes at least:-a control unit, which has programmable electronic devices, and is controlled by inputting each parameter of the process of the present invention The operating process of each unit in the plant I ,, β · · ·. , ·, '··' ..... ',,: ·, · :::: ·-·. ····· * ·· * ········ ** ··· · • ·-/ An etching or cleaning / drying unit, which provides a suitable equipment for the processing environment of Tan Etching 1 or cleaning and drying of the workpiece, and there really is a work platform that provides etching or cleaning and drying of the workpiece processing; Acoustic *. · An etching solution or cleaning solution supply unit, which is a device that can supply etching solution or cleaning solution. · The device has an adjustable etching solution flow rate and etching solution or 淸,-. · ·· · · ...... ·: ······. * ... ....... The flow valve and solenoid valve switch of the washing liquid switch, and the flow valve and the solenoid valve switch癀 Each can be accessed through the control unit Control, and up to S1, it has the functions of adjusting the chemical liquid flow and the chemical liquid switch respectively: * * An air flow supply unit, which is a device that can supply the jet air flow, and the pipe * > «» has separately adjustable jets Flow valve and solenoid valve switch of air flow and jet flow switch, and each of the flow valve and the solenoid valve switch can be controlled by the control unit to achieve its functions of adjusting jet flow and jet flow switch respectively; · · ·

11 六、申請等到範園前述之鈾刻或淸洗、乾燥單元中的作業平台可以是具有旋 •轉裝置可夾持並驅動旋轉蝕刻或淸洗、乾燥工件，或是具有直線運動裝置的輸送帶； . … ••前述之化學液供給單元及氣流供給單元分別具有可噴灑化. 學液之一噴灑元件及可供應噴射氣流之一氣流噴嘴，且該噴灑元件及該氣流噴嘴之裝設方式皆係配合該蝕刻或淸洗〔乾燥工 '件之加工方，向.， , ·· '、 · . · , · ’:、5、:依據寡利申請lis第4項所述之德蝕刻或S洗、乾祕製程系： /統，該氣流噴嘴之開口形狀可以係Ϊ平狀或圓形。 rr ：:-: • * . - . ' · ,· . ..... Y ,：… ό、依據辱利申請範.第4項所鸿之化學餓刻或淸洗、乾燥的製程系統，該氣流供給單充所供給之氣流可以係氮氣(Ν2ω)。 ·，.. ·7、依雙專利申請範圍第4·事所雖之你學羊刳或靖洗、乾燥的㈣程系，統，該噴灑元件可以係複數個，旦配合該蝕刻或淸洗、乾燥元件之加工表面而以適當的排列方式裝設。.· -- 經濟部中央標毕局貝工消費合作社印製 8、依據專利申請範圍第6項或第7項所述之化學蝕刻或清洗、乾燥的製程系統·，該氣流噴嘴可以係複數個，並配合該蝕刻或淸洗、乾燥兀件之加工表面而以適當的排列方式装設’且各個噴嘴與該飩刻或清洗、乾燥元件之蝕刻加工表面間的夾角可依照實際需要而調整；而該夾角可以係水平的。11 VI. Application to wait until the above-mentioned uranium engraving or decontamination and drying unit in Fanyuan can be equipped with a rotating and rotating device that can hold and drive rotary etching or decontamination, dry the workpiece, or convey with a linear motion device. …… •• The aforementioned chemical liquid supply unit and air flow supply unit respectively have a sprayable chemical spray element and an air flow nozzle capable of supplying a spray air flow, and the spray element and the air flow nozzle installation method All are in accordance with the processing of the etching or decontamination [drying process 'parts, to: ,, ··', · · · · ·, · :, 5 ,: according to the oligopoly application of the lith etched in item 4 or S washing and drying process system: / system, the opening shape of the air nozzle can be flat or round. rr ：:-: • *.-. '·, ·. ..... Y, ：…, according to the application of disgrace application. The chemical processing system of engraving, rinsing, and drying in accordance with the fourth item, The gas stream supplied by the single gas supply unit can be nitrogen (N2ω). ···· 7. According to the scope of the dual patent application No.4 · Although you learn the process of lamb sacrifice or washing and drying, the spraying element can be a plurality of, once cooperated with the etching or cleaning 、 Dry the processing surface of the component and install it in an appropriate arrangement. --- Printed by the Central Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives 8. According to the chemical etching, cleaning, and drying process system described in item 6 or 7 of the scope of patent applications, the airflow nozzle can be multiple And cooperate with the processing surface of the etching or cleaning and drying elements to install it in an appropriate arrangement 'and the angle between each nozzle and the etching processing surface of the engraving or cleaning and drying elements can be adjusted according to actual needs; The included angle may be horizontal.