TW539693B - Embedding resin - Google Patents
Embedding resin Download PDFInfo
- Publication number
- TW539693B TW539693B TW90131630A TW90131630A TW539693B TW 539693 B TW539693 B TW 539693B TW 90131630 A TW90131630 A TW 90131630A TW 90131630 A TW90131630 A TW 90131630A TW 539693 B TW539693 B TW 539693B
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- TW
- Taiwan
- Prior art keywords
- resin
- inlay
- substrate
- less
- black
- Prior art date
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- 229920005989 resin Polymers 0.000 title claims abstract description 102
- 239000011347 resin Substances 0.000 title claims abstract description 102
- 239000006229 carbon black Substances 0.000 claims abstract description 10
- 239000003822 epoxy resin Substances 0.000 claims description 19
- 229920000647 polyepoxide Polymers 0.000 claims description 19
- 238000004040 coloring Methods 0.000 claims description 8
- 229920001187 thermosetting polymer Polymers 0.000 claims description 7
- 229910010272 inorganic material Inorganic materials 0.000 claims description 5
- 239000011147 inorganic material Substances 0.000 claims description 5
- VOOLKNUJNPZAHE-UHFFFAOYSA-N formaldehyde;2-methylphenol Chemical compound O=C.CC1=CC=CC=C1O VOOLKNUJNPZAHE-UHFFFAOYSA-N 0.000 claims description 2
- SLGWESQGEUXWJQ-UHFFFAOYSA-N formaldehyde;phenol Chemical compound O=C.OC1=CC=CC=C1 SLGWESQGEUXWJQ-UHFFFAOYSA-N 0.000 claims description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims 1
- 229920001568 phenolic resin Polymers 0.000 claims 1
- 235000019241 carbon black Nutrition 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 description 60
- 239000010410 layer Substances 0.000 description 35
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 22
- 238000000034 method Methods 0.000 description 20
- 238000010586 diagram Methods 0.000 description 19
- 239000000049 pigment Substances 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 16
- 235000012431 wafers Nutrition 0.000 description 16
- 239000003990 capacitor Substances 0.000 description 15
- 239000010949 copper Substances 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 14
- 238000007747 plating Methods 0.000 description 14
- 229910000679 solder Inorganic materials 0.000 description 13
- 239000004848 polyfunctional curative Substances 0.000 description 12
- 238000005260 corrosion Methods 0.000 description 9
- 238000011049 filling Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- 239000003086 colorant Substances 0.000 description 7
- 238000004891 communication Methods 0.000 description 7
- 239000011889 copper foil Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 239000011256 inorganic filler Substances 0.000 description 7
- 229910003475 inorganic filler Inorganic materials 0.000 description 7
- 229910052809 inorganic oxide Inorganic materials 0.000 description 7
- 238000009413 insulation Methods 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 6
- 238000009713 electroplating Methods 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 230000001788 irregular Effects 0.000 description 6
- MEVBAGCIOOTPLF-UHFFFAOYSA-N 2-[[5-(oxiran-2-ylmethoxy)naphthalen-2-yl]oxymethyl]oxirane Chemical compound C1OC1COC(C=C1C=CC=2)=CC=C1C=2OCC1CO1 MEVBAGCIOOTPLF-UHFFFAOYSA-N 0.000 description 5
- 241000234282 Allium Species 0.000 description 5
- 235000002732 Allium cepa var. cepa Nutrition 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000001569 carbon dioxide Substances 0.000 description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000001723 curing Methods 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000012860 organic pigment Substances 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000005871 repellent Substances 0.000 description 3
- 238000007788 roughening Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 229910052979 sodium sulfide Inorganic materials 0.000 description 3
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 description 3
- 230000008961 swelling Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- NOAZYCPSGIRVAQ-UHFFFAOYSA-N 1h-benzimidazole;copper Chemical compound [Cu].C1=CC=C2NC=NC2=C1 NOAZYCPSGIRVAQ-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- 239000003999 initiator Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- GEHJYWRUCIMESM-UHFFFAOYSA-L sodium sulfite Chemical compound [Na+].[Na+].[O-]S([O-])=O GEHJYWRUCIMESM-UHFFFAOYSA-L 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- QGKMIGUHVLGJBR-UHFFFAOYSA-M (4z)-1-(3-methylbutyl)-4-[[1-(3-methylbutyl)quinolin-1-ium-4-yl]methylidene]quinoline;iodide Chemical class [I-].C12=CC=CC=C2N(CCC(C)C)C=CC1=CC1=CC=[N+](CCC(C)C)C2=CC=CC=C12 QGKMIGUHVLGJBR-UHFFFAOYSA-M 0.000 description 1
- -1 5-hydroxybarbituric acid iodide salt Chemical compound 0.000 description 1
- 241001198498 Assara Species 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 244000126211 Hericium coralloides Species 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- 241000395576 Risor Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- AUNAPVYQLLNFOI-UHFFFAOYSA-L [Pb++].[Pb++].[Pb++].[O-]S([O-])(=O)=O.[O-][Cr]([O-])(=O)=O.[O-][Mo]([O-])(=O)=O Chemical compound [Pb++].[Pb++].[Pb++].[O-]S([O-])(=O)=O.[O-][Cr]([O-])(=O)=O.[O-][Mo]([O-])(=O)=O AUNAPVYQLLNFOI-UHFFFAOYSA-L 0.000 description 1
- ZXGIHDNEIWPDFW-UHFFFAOYSA-M acid red 4 Chemical compound [Na+].COC1=CC=CC=C1N=NC1=CC(S([O-])(=O)=O)=C(C=CC=C2)C2=C1O ZXGIHDNEIWPDFW-UHFFFAOYSA-M 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- IRERQBUNZFJFGC-UHFFFAOYSA-L azure blue Chemical compound [Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Al+3].[Al+3].[Al+3].[Al+3].[Al+3].[Al+3].[S-]S[S-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-] IRERQBUNZFJFGC-UHFFFAOYSA-L 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- ZXJXZNDDNMQXFV-UHFFFAOYSA-M crystal violet Chemical compound [Cl-].C1=CC(N(C)C)=CC=C1[C+](C=1C=CC(=CC=1)N(C)C)C1=CC=C(N(C)C)C=C1 ZXJXZNDDNMQXFV-UHFFFAOYSA-M 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- VAPILSUCBNPFBS-UHFFFAOYSA-L disodium 2-oxido-5-[[4-[(4-sulfophenyl)diazenyl]phenyl]diazenyl]benzoate Chemical compound [Na+].[Na+].Oc1ccc(cc1C([O-])=O)N=Nc1ccc(cc1)N=Nc1ccc(cc1)S([O-])(=O)=O VAPILSUCBNPFBS-UHFFFAOYSA-L 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- GWVMLCQWXVFZCN-UHFFFAOYSA-N isoindoline Chemical compound C1=CC=C2CNCC2=C1 GWVMLCQWXVFZCN-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- MOUPNEIJQCETIW-UHFFFAOYSA-N lead chromate Chemical compound [Pb+2].[O-][Cr]([O-])(=O)=O MOUPNEIJQCETIW-UHFFFAOYSA-N 0.000 description 1
- 229940107698 malachite green Drugs 0.000 description 1
- FDZZZRQASAIRJF-UHFFFAOYSA-M malachite green Chemical compound [Cl-].C1=CC(N(C)C)=CC=C1C(C=1C=CC=CC=1)=C1C=CC(=[N+](C)C)C=C1 FDZZZRQASAIRJF-UHFFFAOYSA-M 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000003359 percent control normalization Methods 0.000 description 1
- IYYMDGDZPDXTGT-UHFFFAOYSA-N perylene-1,2-dione Chemical class C1=CC(C2=C3C(=CC(C2=O)=O)C=CC=C32)=C3C2=CC=CC3=C1 IYYMDGDZPDXTGT-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000004172 quinoline yellow Substances 0.000 description 1
- IZMJMCDDWKSTTK-UHFFFAOYSA-N quinoline yellow Chemical compound C1=CC=CC2=NC(C3C(C4=CC=CC=C4C3=O)=O)=CC=C21 IZMJMCDDWKSTTK-UHFFFAOYSA-N 0.000 description 1
- 229940051201 quinoline yellow Drugs 0.000 description 1
- 235000012752 quinoline yellow Nutrition 0.000 description 1
- 150000003248 quinolines Chemical class 0.000 description 1
- 150000004053 quinones Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 235000010265 sodium sulphite Nutrition 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 150000004961 triphenylmethanes Chemical class 0.000 description 1
- 125000002221 trityl group Chemical group [H]C1=C([H])C([H])=C([H])C([H])=C1C([*])(C1=C(C(=C(C(=C1[H])[H])[H])[H])[H])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- SMWCBVIJCHHBAU-UHFFFAOYSA-L uranium sulfate Chemical compound [U+2].[O-]S([O-])(=O)=O SMWCBVIJCHHBAU-UHFFFAOYSA-L 0.000 description 1
- 229910000383 uranium sulfate Inorganic materials 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/04—Carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49894—Materials of the insulating layers or coatings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Description
539693 五、 發明說明 (1: ) [ 發 明 所 屬 技術 領 域 ] 本 發 明 係 有關 用 以 將 電 容晶 圓 、電感 晶圓、電 阻 晶 圓 鑲 塡 至 基 板 內 部之 鑲 塡 樹 脂 。特 別 適用於 將電子元 件 鑲 塡 於 基 板 內 咅1; ;之多層線! 珞 基 板、 半 導體構件收納 用 封 裝 ( pa ckage ) 等用途。 [ 習 知 技 術 ] 近 年 來 廣受 討 晒 的 係 爲將 多 數半導 體構件搭 載 至 疊 層 ( b u i 1 d - up )線 路 基 板 之 多晶 (片 ‘模組( :MCM ) ° 一 般 而 言 > 在 實 裝 電 谷晶 圓 電 感 晶圓 電阻晶 圓等電子 零 件 的 情 況 下 使 用 焊錫 而於 形 成於線 路 基板表 面之實裝 用 配 線 層 進 行 表 面 實 裝。 然 而 , 將 電子 元件 表 面 實裝 於 畳層線 路基板後 5 因 必 須 要 對 應 於 各 個電 子 元 件 之 所定 實 裝面積 ,故於小 型 化 方 面 白 然 有所 限 制。 此 外 藉 由在 進 行表面 實裝之際 之 線 路 處 理 將 造 成於特性 上 不 佳 之寄 生 電感之 增大,而 形成 難 以 對 m 電 子 機 器之 局 頻 化 之 問題 〇 爲 解 決 該 等問 題 而 加 以討 晒 有將電 子元件鑲 塡 至 基 板 內 部 之 種 種 方法 0 在 曰 本 專利特; 開平11 .-1 26978 號 方 面 雖 揭 示 有 將 電子 元 件 以 焊 接裝 設 至預先 由金屬箔 所 形 成 之 附 有 轉 寫 薄 板之 線 路 基 板 ,然 而 ,卻仍 有在裝設 中 之 位 置 稩 度 等 問 題 存在 〇 而在 曰 本專 利特開 2000 - 1 24352 號 方 面 > 則 揭 示 有 將絕 緣 層 疊 層 在於 核 心基板 中鑲塡有 電 子 元 件 之 多 層 線 路 基板 〇 -3- 539693 五、發明說明(2) 【發明所欲解決之問題】 將電子元件鑲塡至核心基板等基板內部的方法中,必須 要以鑲塡樹脂埋入基板與電子元件之間的空隙,更甚者, 將絕緣層與線路進行疊層之後,將電子元件之電極與形成 於絕緣層上之配線之間,須藉由無電解電鍍等金屬化手法 以進行電氣性連接。 鑲塡樹脂最佳係爲,將配線模式(pattern)曝光顯像 於已疊層之絕緣層上時,抑制形成其問題之光的不規則反 射’且用以使硬化時之色彩不均較不顯眼而以黑色著色。 爲此,必須配合將碳等作爲著色材料。 然而,因爲碳具有導電性,過於添加則會造成絕緣性減 低的問題。因此,無論如何在電子元件間、抑或形成於絕 緣層上之配線間維持其絕緣性,抑制光的不規則反射等等 ,爲不使硬化時之色彩不均過於顯眼,最爲重要的便是以 黑色來進行著色。 此外,於高頻用途之線路基板中,所具有之問題係爲要 如何達到於高頻區域中之電氣性信號損失之低減。因此, 即使於已鑲塡入電子元件之線路基板中,所使用的鑲塡樹 脂依舊要求具有低介電率、且具有低介電損失。 本發明之課題,係爲提高搭載電子元件之線路基板的實 裝密度,且於絕緣特性等電氣特性中,可獲得優越之物性 値的同時,可提供一種鑲塡樹脂,係爲抑制光的不規則反 射、硬化時之色彩不均不致於過度醒目。 -4- 539693 五、發明說明(3) 【解決問題之手段】 本發明之鑲塡樹脂,係爲用以鑲塡電子元件之鑲塡樹脂 中,其特徵在於,其介電率爲5以下,且其tan6爲0.08 %以下。在此所稱之「鑲塡電子元件」,指的便是在核心 基板等基板或已疊層之絕緣層上所設之開口部(貫通孔或 槽等凹部等)中配置電子元件後,將鑲塡樹脂充塡至電子 元件與開口部之間所產生的間隙裡者。開口部係可利用藉 由衝孔基板所形成之貫通孔、或是以多層化技術所形成之 槽。 雖可使用被稱爲FR-4、FR-5、BT等核心基板來作爲本 發明所採用之基板,不過,亦可使用在PTFE等熱可塑性 樹脂薄板中夾入厚度爲35//m左右厚度爲厚之銅箔的核心 基板上形成開口部。此外,至少於核心基板之一面上形成 將絕緣層與線路層交互堆疊之疊層,同時,亦可使用將開 口部至少以貫通核心基板及疊層一方者所形成之物。在此 情況下,即便如第1 1圖所示之內藏型電容之多層線路基 板中,將所謂的玻璃-環氧複合材料等核心基板之厚度作 爲 400 // m左右後,便薄化至一般品800 // m之一半厚度 ’其利點係具有可達到低背化之目的。在其他例子方面, 係可形成將電子元件鑲塡至核心基板內部之線路基板(例 如第1圖所示)或鑲塡至疊層內部之線路基板(例如第1 〇 圖所示)。 另外,前述電子元件係包含有,電容晶圓、電感晶圓、 539693 五、發明說明(4) 電阻晶圓、濾波器等被動電子元件、電晶體、半導體構件 、FET、低雜訊放大器(LNA )等主動電子元件、或是SAW 濾波器、LC濾波器、天線開關模組、耦合器、雙工器( diplexer)等電子元件。 此種鑲塡樹脂之介電損失若增大,因電氣性信號之傳送 損失亦會增大故而不佳。將指示此種鑲塡樹脂之介電損失 之優劣與否的指標之t an (5規定在0.08以下,便可提升電 氣性信號之傳送損失。t an 5之適當範圍爲0 . 05以下,最 佳範圍爲0.04以下,更佳範圍爲0.03以下,特別係以 0.02以下爲佳。 本發明之鑲塡樹脂中,特別最佳者係爲添加由細微粒子 所形成之碳黑。可將碳黑添加1.4質量%以下。不僅鑲塡 樹脂之絕緣信賴性、介電特性,還可於鑲塡樹脂上已疊層 之絕緣層上將線路模式進行曝光顯像之際,抑制形成問題 之光的不規則反射等,且可使硬化時之色彩不均不致過於 醒目。更爲佳者,係可爲1.0質量%以下。防止體積阻抗 之減低、且可提升電氣性之特性。 爲了可有效地迴避有關上述線路模式之曝光顯像之問題 ,可將碳黑含有在0.1〜1.4質量%之範圍。最佳爲0.1〜 1.0質量%,更佳爲0.1〜0.5質量%,特別於0.1〜0.3 質量%爲佳。 當碳黑之含有量將配合比例以重量比超過1 · 4質量%後 ,介電特性或電氣性特性方面便會急速的惡化。具體而言 539693 五、發明說明(5) ’介電損失之良劣與否之指標的t an 5超越〇 . 08的同時, 介電率亦超越5。此外,顯示絕緣性良劣與否之指標的體 積阻抗亦會有低於1.0Χ1014Ω · cm之問題發生。 本發明之鑲塡樹脂係至少包含之作爲樹脂成分之熱硬化 樹脂,且亦可至少包含一種種類以上之無機塡料。藉以至 少包含熱硬化樹脂,充塡樹脂後便可藉熱處理而更容易的 硬化。在使用環氧系樹脂作爲熱硬化樹脂的情況下,將使 用5 -羥基巴比士酸碘鹽等光重合開始劑之直接環氧基進行 陽離子重合。 進行本硬化前之暫時硬化的目的中,於熱硬化性樹脂中 亦可添加感光性樹脂。例如,可添加具有阿庫洛依魯(音 譯:akurom)基之感光性樹脂。在使用環氧系樹脂作爲 熱硬化性樹脂的情況下,亦可使使用光重合開始劑之直接 環氧基光重合、進行暫時硬化。 亦可使用環氧系樹脂作爲熱硬化性樹脂。具體而言,亦 可由下述中至少選出一種,即,雙酚型環氧樹脂、奈型環 氧樹脂、酚甲醛型環氧樹脂、以及甲酚甲醛樹脂。硬化後 之環氧系樹脂因具有3次元構造之架構,故’即使在進行 爲使以配線之穩固(anchor)效果而提升密著強度之粗化 處理之後,鑲塡樹脂之形狀亦不會產生不必要崩潰的情況 〇 鑲塡樹脂之流動性惡劣時,於電子元件之電極間的空隙 便會引起塡充不良、於局部處產生熱膨脹係數之極端相異 539693 五、發明說明(6) 的部分。特別在考慮耐熱性、耐濕性的情況下,因奈型環 氧樹脂較爲優越故爲佳。 此外’鑲塡樹脂之粗化處理,通常雖爲藉由使用過錳酸 鉀或鉻酸等氧化劑之濕式法,不過,亦可藉由採用等離子 或雷射等乾式法。 混入無機塡料,係於調整硬化後之熱膨脹係數以外,藉 由達到作爲架構效果之無機塡料,將使粗化處理後之鑲塡 樹脂之形狀不會產生不必要崩潰的情況。 作爲無機塡料雖未有特別的限制,卻以結晶性氧化矽、 溶融氧化矽、氧化鋁、氮化矽等爲佳。可將鑲塡樹脂之熱 膨脹係數有效的減低。藉此,相對於熱應力可獲得信賴性 之提升。 無機塡料之塡料徑,係必須使鑲塡樹脂即便在電子元件 之電極間之間隙亦可容易的流入,故可使用粒徑50μηι以 下之塡料。超過50μιη後,塡料容易堵塞於電子元件之電 極間的空隙,且因鑲塡樹脂之塡充不良而於局部處產生熱 膨脹係數之極端相異的部分。塡料徑之下限値爲0 . 1 μηι以 上爲佳。若較此爲細,則不易確保鑲塡樹脂之流動性。最 佳爲0.3 μΐΏ以上、更佳爲0.5 μΐΏ以上。爲達成鑲塡樹脂之 低黏度、高塡充化,可將粒度分布增廣。 無機塡料之形狀係爲提高鑲塡樹脂之流動性與塡充率, 可爲略呈球狀。特別是矽系之無機塡料,因容易獲得球狀 539693 五、發明說明(7) 之物故爲佳。 無機塡料之表面’可因應需要性而以偶合劑進行表面處 理。無機塡料之樹脂成分將形成濕潤性良好,也因此,鑲 塡樹脂之流動性係形成爲良好。作爲偶合劑之種類,係使 用有矽甲烷系、鈦酸酯系、鋁酸酯系等。 爲有效的迴避關於前述線路模式之曝光現像的問題,可 將本發明之鑲塡樹脂進行著色。爲了抑制疊層於鑲塡樹脂 上之線路模式在進行曝光顯像之際形成光的不規則反射等 ,可將硬化時的色彩不均不致過於明顯。著色時之色彩雖 未有所限制’係可將黑色、青色、綠色、紅色、橘色、黃 色、紫色中任一種顏色作爲基調顏色。在重視抑制光的不 規則反射之情況下,係以黑色、青色、綠色作爲基調顏色 爲佳,特別係以黑色系列爲最佳。 以黑色系列著色至鑲塡樹脂,係爲添加碳黑、黑鉛、碳 黑與黑錯之混合物寺黑色的碳素系列粉末,抑或添加C U 2 〇 、CuO、Μη02等黑色無機氧化物粉末,且可添加克羅姆純 黑All 03等甲亞胺之黑色有機顏料。 以青色系列著色鑲塡樹脂方面,舉例上係可爲酞菁藍等 酞菁系列顏料、凡拉明藍等偶氮系列顏料、蔥醌藍等蔥酸 系列等有機系列顏料,抑或群青、鈷藍等無機氧化物。 以綠色系列著色鑲塡樹脂方面,舉例上係可爲酞菁綠等 駄菁系列顏料、鉻綠等偶氮系列顏料、孔雀綠等三苯甲院 系列等有機系列顏料、Cr 203等無機氧化物粉末。 539693 五、發明說明(8) 以紅色系列著色鑲塡樹脂方面,舉例上係可爲偶氮曙紅 i阿佐拉夫索耳紅、立索耳紅等酞菁系列顏料、喹吖酮、 蔥醌紅等有機系列顏料、土紅、鎘紅等無機氧化物粉末。 以橘色系列著色鑲塡樹脂方面,舉例上係可爲鉻橙等酞 菁系列顏料、苯并咪唑銅等有機系列顏料、鉬橙等無機氧 化物粉末。 以黃色系列著色鑲塡樹脂方面’舉例上係可爲鉻黃、漢 撒頁等酞菁系列顏料、喹啉黃等喹啉系列顏料、安思拉黃 等蔥醌系列顏料、苯并咪唑銅、異吲哚滿等有機系列顏料 、鎘黃、黃鉛、鈦黃等無機氧化物粉末。 以紫色系列著色鑲塡樹脂方面,舉例上係可爲蔥醌紫等 悤醌系列顏料、三井結晶紫等三苯甲乙烷系列顏料等有機 系列顏料、猛紫等無機氧化物粉末。 將鑲塡樹脂以黑色、青色、綠色、紅色、橘色、黃色、 紫色中任一種顏色作爲基調顏色而進行著色時,係可使用 單獨的著色劑,抑可組合各種色彩之著色劑以進行著色。 此時’可組合紅、黃、青之顯示爲三原色的顏料。可將鑲 塡樹脂以所有的顏色進行著色。 此外’碳黑等導電性物質以外之著色劑的配合量,係用 以使其抑制光的不規則反射、且可使硬化時之色彩不均不 致過於醒目,以滿足適於工程條件之所希望之色調條件, 而適宜的調整。 鑲塡有使用本發明鑲塡樹脂之電子元件的線路基板,係 -10- 539693 五、發明說明(9) 形成具有優越的耐熱循環性、且具有連接信賴性。具體而 言,可如第1圖或第10圖所示之內藏型電容的覆晶式封 裝(flip chip package)。在此,不僅只有所列示之凸 柵陣列型之封裝,抑可爲銷柵陣列型封裝。 【本發明較佳實施例之詳細說明】 倘若以第1圖爲例,使用本發明鑲塡樹脂之線路基板, 係可藉由如下述之程序來製造。如第2圖所示,於該核心 基板(1 )上使用模具設置所定大小的貫通孔(開口部·· 2 ),且於該核心基板之一面上貼附背帶(back tape(3)) 後,便將背帶貼附面於下側置放。 如第3圖所示,於由其他面朝開口部(2 )內之背帶(3 ) 之黏著面上所定位置上,將電容晶圓(4 )使用固定晶圓 (chip mound)進行配置。在此所採用之電容晶圓,爲使 鑲塡樹脂之旋入爲佳,以使用具有由電容本體突出之電極 (5 )之物爲佳。如第4圖所示,配置於開口部(2 )內之 電容晶圓(4 )與開口部(2 )內之空隙間,係將本發明之 鑲塡樹脂(6)使用分配器(dispenser)流入。 將鑲塡樹脂(6)藉由100°CX80分-> 120°CX60分-> 1 6 0 °C X 1 〇分之條件進行脫泡及熱硬化。將已熱硬化之鑲 塡樹脂(6 )之表面以使用皮帶式硏磨機進行粗硏磨後, 且以磨光(1 a p )硏磨進行最後的修整硏磨。硏磨後之鑲 塡樹脂(6)之表面(60)係如第5圖所示。 接著’如第6圖所示,使用二氧化碳氣體雷射以進行加 -11- — 539693 五、發明說明(1〇) 工連通孔(7 )之鑽孔,使電容晶片(4 )之電極(5 )露 出。 之後,使用膨潤液與ΚΜη04溶液以粗化鑲塡樹脂(6 )之露 出面(6 1 ) 。Pd觸媒活性化粗化面後,以無電解電鍍、電 解電鍍之順序實施銅電鍍(9 )。銅電鍍後之狀態揭示於 第7圖。於電鍍面上形成防蝕層(未圖示),將所定的線 路模式進行圖形化。且使用Na2S 208 /濃硫酸蝕刻除去不要 的銅之部分。剝離防蝕層且完成線路(9 0 )之形成。線路 形成後之狀態揭示於第8圖。 於其上將形成絕緣層之薄膜(1 4、1 5 )進行層壓( lam i mate)且熱硬化後,照射雷射而形成層間連接用之連 通孔。將絕緣層表面以使用相同氧化劑而粗化,且以同樣 的手法形成所定之線路模式。於線路基板之最表面所形成 焊劑防蝕塗層之乾薄膜進行層壓,將半導體構件之實裝模 式進行曝光、顯像而形成,且形成焊劑防蝕塗層(1 2 )。 其狀態如第9圖所示。實裝半導體構件之端子電極(1 3 ) 方面,係以N i電鍍、Au電鍍之順序施行電鍍。之後,便 通過回焊爐,裝設半導體構件(1 8 )。進行基板實際裝設 之電極方面,係形成低融點焊劑所使用之焊接孔(1 7 )。 將焊接材料(2 1 )以分配器充塡至實裝部後,進行熱硬化 ’如弟1圖所不來完成所稱目的之線路基板之製作。 於核心基板之至少一面上,將絕緣層與線路層以交互方 式進行積層而形成疊層的同時,使用之基板係爲將開口部 -12- 539693 五、發明說明(11) 貫通核心基板與疊層之多層線路基板,係可如下所述進行 製造(第11圖〜第25圖)。在此,使用第11圖所示之 所謂的「FC-PGA」構造之線路基板說明如下。 如第12圖所示,準備有將厚度18//m之銅箔(200)貼 附於厚度〇.5mm之絕緣基板(10 0)上之FR-5製雙面貼銅 核心基板。在此所用之核心基板的特性,係藉由TMA之Tg (玻璃移轉點)達175°C,基板面方向之CTE (熱膨脹係 數)爲16ppm/ °C,基板面垂直方向之CTE (熱膨脹係數 )爲50ppm/ °C,於ΙΗΜζ中之介電率ε爲4. 7,於1MHz 中之 tan5 達 0.018。 將光阻薄膜(photoresist film)貼附於核心基板上、 進行曝光顯像,且設置對應於直徑600 // m開口部與所定 線路形狀之開口部(未圖示)。使用含有亞硫酸鈉與硫酸 之蝕刻液以將露出於光阻薄膜開口部之銅箔蝕刻去除。剝 離除去光阻薄膜,如第13圖所示,獲得對應於露出部( 3〇〇 )與所定線路形狀之露出部(未圖示)所形成之核心 基板。 藉由市面販售之蝕刻處理裝置(美克(音譯)社製 CZ 處理裝置)實施鈾刻處理而將銅箔表面粗化後,將以環氧 樹脂爲主體之厚度3 5 // m之絕緣薄膜貼附於核心基板兩面 。之後,便以1 7(TC X 1 . 5時間之條件進行固化處理( c u r e )而形成絕緣層。此種固化處理之後之絕緣層特性係 -13- 539693 五、發明說明(12) 爲,藉由TMA之Tg (玻璃移轉點)達155°C,藉由DMA之 Tg (玻璃移轉點)達2041 ’ CTE (熱膨脹係數)爲66ppm /°C,於ΙΗΜζ中之介電率e爲3.7,於1MHz中之tan<5 達0.033,300°C下之重量減爲- 0.1%,吸水率爲0.8%, 吸濕率爲1 %,楊格(Young )率爲3GHz,拉伸強度達 63Mpa,伸長率爲4.6%。 如第1 4圖所示,於使用二氧化碳氣體雷射之絕緣層( 400 )上形成層間連接用之連通孔(500 )。連通孔之型態 ,係爲表層部直徑爲120// m、底部直徑爲60// m之缽狀。 更甚者,提昇二氧化碳氣體雷射之輸出,形成用以貫通絕 緣層( 400 )與核心基板之直徑300 // m之貫通孔( 600 ) 。貫通孔之內壁面係具有以雷射加工之特有的波狀彎曲( 未圖示)。之後,便將基板以含有氯化鈀之觸媒活性化液 體浸漬後,於全面實施無電解銅電鍍(未圖示)。 其次,於基板全面附上厚度爲1 8 // πι之銅面板電鍍 (700 )。在此,連通孔(500 )方面係形成有將層間以電 器性連接之連通孔導體(800 )。另外,於貫通孔(600) 方面係形成有將基板表裏面以電器性連接之貫通孔導體 (900 )。且藉由市售之(美克(音譯)社製 CZ處理裝 置)實施蝕刻處理而將銅電鍍表面粗化。之後’藉由同家 公司之防鏽劑實施防鏽處理(商品名:CZ處理)而形成斥 水性面,結束斥水化處理。將相對於已實施斥水化處理之 導體層表面之水的接觸角2Θ,在藉由接觸角測定器(商 -14- 539693 五、發明說明(13) 品名:C A - A ’協和科學製)以液適法進行測定後,接觸角 2 0係爲1 〇 1度。 於真空吸附裝置之所附台座上設置不纖紙,將上述基板 配置於台座之上。設置具有用以對應於其上之貫通孔( 6 00 )位置上之不鏽鋼製的鑲塡光罩。接著,載置含有銅 塡充物之通孔塡充用糊狀物,一邊以滾輪式橡皮輥加壓而 進行鑲塡充塡。 如第1 5圖所示,將以充塡至貫通孔(600 )內之貫通孔 充塡用塡充物(1 000 )以120°C X 20分的條件下暫時固化 。其次’如第1 6圖所示,使用皮帶硏磨機以硏磨(粗硏 磨)基板表面後,進行拋光硏磨(最後修整硏磨)而平坦 化,便使其以1 50t X 5小時的條件下固化,而結束鑲塡 程序。 如第17圖所不,使用模具(未圖示)而形成口8111111之貫 通孔(1 10 )。如第18圖所示,將遮蔽帶(120 )貼附至 基板的一面上。之後,如第1 9圖所示,於露出至貫通孔 (1 10 )之遮蔽帶(120 )上,將積層電容晶圓(130 )使 用固定晶圓(chip mound)配置8個。此種積層電容晶圓 ,係由1.2mmX〇.6mmX〇.4mm之積層體(150)所形成,且 將電極(140)由積層體突出70//m。 如第20圖所示,於已配置積層電容晶圓(1 30 )之貫通 孔(1 1 0 )之中,使用分配器(未圖示)而將本發明之鑲 塡樹脂(160 )進行充塡。藉由80°C X 3小時之1次加熱 程序、1 7 0 °C X 6小時之2次加熱程序的條件而將鑲塡樹脂 脫泡與熱硬化。 -15- 539693 五、發明說明(14 ) 如第2 1圖所示,將以硬化之鑲塡樹脂(1 60 )表面使用 皮帶硏磨機進行粗硏磨後◦以磨光硏磨進行最後修整硏磨 。於硏磨面方面,電容晶圓(130)之電極(140)之端面 係爲露出。接著,將已暫時硬化之鑲塡樹脂(160)以150t X 5小時的條件下硬化。 之後,使用膨潤液與ΚΜη04溶液以粗化鑲塡樹脂(1 60 ) 之硏磨面。將粗化面以Pd觸媒活性化之後,以無電解電 鍍、電解電鍍之順序實施銅電鍍。如第22圖所示,被形 成於鑲塡樹脂(1 60 )上之電鑪層(1 70 )係電氣性地連接 至電容晶圓(130 )之電極(140)端面。且於電鍍面上形成 抗蝕層(未圖示),將所定線路模式進行圖形化。且使用 Na2S 208 /濃硫酸鈾刻除去不要的銅之部分。剝離防蝕層, 如第23圖所示完成線路之形成。藉由市售之蝕刻處理裝 置(美克(音譯)社製 CZ處理裝置)實施蝕刻處理而將 線路之銅電鍍表面粗化。 將於其上形成爲絕緣層之薄膜(1 90 )進行層壓且熱硬 化後,照射二氧化碳氣體雷射而形成層間連接用之連通孔 。將絕緣層表面使用與上述相同之氧化劑以進行粗化,且 以同樣之手法形成所定線路(20 1 )。於線路基板之最表 面上形成爲焊劑防蝕塗層之乾薄膜進行層壓,將半導體構 件之實裝模式進行曝光、顯像後形成,結束焊劑防蝕塗層 (2 1 0 )之形成。即便是針對進行實裝用之附銷(p i η )之 裏面側,亦以同樣方法形成所定之線路(230 )與焊劑防 -16- 539693 五、發明說明(15) 蝕塗層(240 ),如第24圖所示,獲得附銷前之多層印刷 線路基板。 實際裝設有半導體構件之端子電極(201 )方面,以Νι 電鍍、Au電鍍之順序實施電鍍(未圖示)。並於其上印刷 由低熔點銲錫所形成之焊料後,通過回焊爐而形成用以實 裝半導體構件之焊球(220 )。 另一方面,於半導體構件實裝面之相反側方面,印刷由 高熔點銲錫所形成之焊料後,通過回焊爐而形成用以附銷 之焊球(260 )。將銷(250 )置放於治具(未圖示)上而 將基板進行配置的狀態下,通過回焊爐、進行附銷(未圖 示),如第25圖所示,獲得將半導體構件進行實裝前之 FC - PG A型之多層印刷線路基板。在使用投影機測定由對應 於以鑲塡樹脂(1 60 )所鑲塡開口部(1 1 0 )之區域上所附 之銷( 250 )的前端之位置偏移量時,可獲得0.1mm以下 之良好結果。 於半導體構件實裝面上將半導體構件(270 )配置於可 進行實裝之位置上,且僅以溶解低熔點焊料(220 )之溫 度條件下通過回焊爐,以實裝半導體構件(270 )。將焊 接材料(300 )以分配器充塡至實裝部後進行熱硬化,而 獲得如第11圖所示之使用將半導體構件( 270 )實裝至表 面之FC-PGA型之多層印刷線路基板所用的半導體裝置。 【實施例】 以下,將本發明使用實施例以進行說明。鑲塡樹脂係形 -17- 539693 五、發明說明(16) 成如表1所示,秤量、混合各成分,且以3根輥筒製粉機 (r〇 1 1 πη 1 1 )進行混合揉捏而製作。在此,表1中之詳 細記載事項係如下所示。 ------ 試料編號 1 2 3 4 5 6 7 8 9 環氧樹脂 HP-4032D HP-4032D E-807 YL-980 HP-4032D N-740 HP-4032D E-152 N-740 硬化劑 QH-200 B-570 QH-200 B-650 YH-306 YH-300 YH-300 B-650 B-650 促進劑 2P4MHZ 2P4MHZ 2P4MHZ 2P4MHZ 2P4MHZ 2P4MHZ 2P4MHZ 2P4MHZ 2P4MHZ TSS-6 TSS-6 TSS-6 TSS-6 TSS-6 TSS-6 TSS-6 TSS-6 TSS-6 塡料含有率 65% 65% 65% 65% 65% 65% 65% 65% 65% #4300 #4300 #4300 #4300 #4300 #4300 #4300 #4300 #4300 碳含有率 0% 0.1% 0.2% 0.3% 0.5% 1.0% 1.5% 2.0% 2.5% 環氧樹脂 • 「HP- 4032D」:高純度奈型環氧樹脂(大日本Inki 製) • 「E-807」··雙酚F型環氧樹脂(油化Shell製) • 「YL- 980」:雙酚A型環氧樹脂(油化Shell製) • 「N- 740」:酚甲醛型環氧樹脂(大日本Ink DAINIPPON INK)製) 硬化劑 • 「QH- 200」:酸無水物系硬化劑(日本ΖΕΟΝ製) • 「Β- 570」:酸無水物系硬化劑(DIC製) • 「Β - 6 5 0」:酸無水物系硬化劑(d I C製) • Γ ΥΗ- 3 06」:酸無水物系硬化劑(油化Shell環氧製) -18- 539693 五、發明說明(17) • 「YH- 3 00」:酸無水物系硬化劑(油化Shell環氧製) 促進劑(硬化促進劑) • 「2P4MHZ」:咪唑系硬化劑(四國化成工業製) 無機塡料 • 「TSS - 6」:有機矽烷偶合處理劑(龍森製:依據粒 度分布最大粒徑爲24 μ m) 碳黑 • 「# 43 00」··東海 Carbon ( Tok a 1 Carbon )社製 「碳含有率」係爲將環氧樹脂+硬化劑+無機塡料之合 計設爲1 00質量%時之値。各添加量係爲如表1所示之比 例。「塡料含有量」係爲將環氧樹脂+硬化劑+塡料之合 計設爲100質量90時之含有量設爲65質量%。促進劑之 含有量係爲將環氧樹脂+硬化劑+塡料之合計設爲1 00質 量%時之含有量設爲0 . 1質量%。環氧樹脂與硬化劑之混 合比例爲以官能基比設爲1 00/ 95。各添加量係如表1所 示之比例的剩餘部。相對於表1所示之各鑲塡樹脂組成物 ,進行以下之評估。 (信賴性評估) 測定介電率及介電損之評估樣品係製作如下。首先,於 薄膜電池(hu 1 1 c e Π )測試用銅板上藉由網目印刷法將 模製(mould)樹脂以寬度60mmX長度90mmX厚度100//m 之尺寸進行印刷。之後,便以100 °C X 80分—120 °C X 60 分—1 60°C X 1 0分之3階段熱條件進行脫泡及熱硬化。於 -19- 539693 五、發明說明(18) 該硬化物上,藉由網目印刷法將銀焊料印刷塗布至直徑 2 0mm之大小上,以阻抗/槽面析光器(gain face analyzer ( HEWLETT PACKARD 製 HP4 1 94A ))進行測定。 體積阻抗之評估用樣品係製作如下。首先’於薄膜電池 測試用銅板上藉由網目印刷法將模製(mou 1 d )樹脂以寬 度60mm X長度90mm X厚度100 μ m之尺寸進行印刷。之後 ,便以 100°C X80 分—120°C X60 分—160°C X10 分之 3 階 段熱條件進行脫泡及熱硬化。將此使用高阻力計數器( high register meter ( HEWLETT PACKARD 製 HP4339B) ),測定體積阻抗。電阻率電池(r e s i s t i v i t y c e 1 1 )係 使用直徑26mni之物,充電時間爲20秒,輸出電壓値爲 100V。 曝光顯像時之生產率及體積阻抗之評估用樣品係製作如 下。首先,將上述所製作之板狀物表面使用膨潤液與 ΚΜη04溶液進行粗化。將粗化面Pd觸媒活性化後,以無電 解電鍍、電解電鍍之順序實施銅電鍍。於電鍍面上形成防 蝕層,線寬/線空間係曝光顯像40// m/20// m之梳齒狀 線路模式。使用Na2S 208 /濃硫酸蝕刻除去不要的銅之部分 。剝離防蝕層,完成線路之形成。此時之合格率係作爲「 曝光生產率」而進行評估。 是否合乎該等評估之判定基準係如下所示。評估結果揭 示於表2。 •體積阻抗:1.0Χ1014Ω · cm以上 -20- 539693 五、發明說明(19) •介電率:5 . 0以下 • tan5 : 0.08 以下 •曝光生產率:95%以下 【表2】________ 試料編號 1 2 3 4 5 〜Ί 6 _ 7 8 9 體積阻抗 (X 1014Ωcm) 15.4 53.0 22.2 14.6 14.7 7.82 17.1 9.82 9.25Χ10'5 是否合乎介 電率 3.78 3.83 3.88 3.98 4.07 4.42 _ 5.46 5.78 7.27 〇 〇 〇 〇 〇 〇 Δ J有不合格) Δ (有不合格) X 是否合乎 tan δ 0.010 0.012 0.017 0.022 0.031 0.047 _ 0.087 0.107 0.194 〇 〇 〇 〇 〇 〇 〜 X X X 是否合乎曝 光成品率 95% 98 97 97 98 97 一 95 96 95 〇 〇 〇 〇 〇 〇 ^ 〇 〇 〇 由結果可得知’實施例中之試料編號1〜6於全數評估 項目中係獲得有良好之結果’另一方面,碳黑之含有量超 過1 . 4質量%之對照例之試料編號7〜9方面,卻可見其 體積阻抗減低、介電率上升、tan5上升與曝光生產率下 降。 【發明之效果】 本發明之鑲塡樹脂,係具有tan (5爲0.08以下、且介電 率亦達5以下之優越介電特性、以及體積阻抗亦有1 · 0 X 1014Ω . cm之高體積阻抗。此外,藉以將碳之配合比例於 -21 - 539693 五、發明說明(2〇) 重量比抑制於1.4質量%以下,體積抵抗亦爲1.0 XI014Ω · cm 後,可獲得良好之絕緣性。且不僅可獲得此種高體積阻抗 、低t an ό、低介電率所稱之優越的介電特性及電氣性特 性,同時,可藉以防止線路模式之曝光時之不規則反射而 達到提昇生產率之目的。 圖式簡單說明 第1圖所示係將使用本發明之鑲塡樹脂之線路基板適用 於BGA基板之例的說明圖。 第2圖所示係使用本發明之鑲塡樹脂之線路基板之製造 方法之一態樣的說明圖。 第3圖所示係使用本發明之鑲塡樹脂之線路基板之製造 方法之一態樣的說明圖。 第4圖所示係使用本發明之鑲塡樹脂之線路基板之製造 方法之一態樣的說明圖。 第5圖所示係使用本發明之鑲塡樹脂之線路基板之製造 方法之一態樣的說明圖。 第6圖所示係使用本發明之鑲塡樹脂之線路基板之製造 方法之一態樣的說明圖。 第7圖所示係使用本發明之鑲塡樹脂之線路基板之製造 方法之一態樣的說明圖。 、 第8圖所示係使用本發明之鑲塡樹脂之線路基板之製造 方法之一態樣的說明圖。 第9圖所示係使用本發明之鑲塡樹脂之線路基板之製造 -22- 539693 五、發明說明(21) 方法之一態樣的說明圖。 第1 〇圖所示係將使用本發明之鑲塡樹脂之線路基板適 用於BGA基板之例的說明圖。 第11圖所示係使用本發明鑲塡樹脂之FC-PGA型之多層 印刷線路基板之一態樣的說明圖。 第1 2圖所示係厚度爲400 // m之銅箔貼附基板的槪略圖 〇 第1 3圖所示係厚度爲400 // m之銅箔貼附基板之圖形化 後之狀態說明圖。 第1 4圖所示係將絕緣層形成於核心基板兩面上之基板 形成連通孔與貫通孔之狀態說明圖。 第1 5圖所示係將絕緣層形成於核心基板兩面上之基板 在附上面板電鍍後之狀態說明圖。 第1 6圖所示係將貫通孔鑲塡且充塡後之基板的說明圖 〇 第1 7圖所示係衝壓以形成貫通孔之說明圖。 第18圖所示係於衝壓以形成貫通孔之基板的一面上, 貼附上遮蔽帶之狀態說明圖。 第19圖所示係於露出至貫通孔之遮蔽帶上,配置有積 層電容晶圓之狀態說明圖。 第20圖所示係將鑲塡樹脂充塡至貫通孔內之狀態說明 圖。 第2 1圖所示係硏磨基板面且呈平坦化之狀態說明圖。 -23- 539693 五、發明說明(22) 第22圖所示係將面板電鍍覆於基板硏磨面之狀態說明 圖。 第23圖所示係以將線路圖形化之狀態說明圖。 第2 4圖所示係於基板上形成疊層(b u i 1 d - u p )及焊劑 防鈾塗層之狀態說明圖。 第25圖所示係使用本發明之鑲塡樹脂之FC-PGA型之多 層印刷線路基板之一態樣之說明圖。 【圖式符號說明】 1 :核心基板 2 :貫通孔(開口部) 3 :背帶 4 :電子元件 5 :電子元件之電極 6 :鑲塡樹脂 60 :平坦化面 61 :粗化面 -24-
Claims (1)
- 539693 ..._ 第90131630號「鑲塡樹脂」專利案 (92年1月28日修正) 六、申請專利範圍: 1 . 一種鑲塡樹脂,係爲用以鑲塡電子元件之鑲塡樹脂裡, 其特徵在於,其介電率爲5以下,且其tan (5爲0.08以 下;將碳黑含有在1.4質量%以下;前述鑲塡樹脂之樹 脂成分係至少包含有熱硬化性樹脂,且至少包含有一種 種類以上之無機塡料;前述熱硬化性樹脂係具有雙酚型 環氧樹脂、奈型環氧樹脂、酚甲醛型環氧樹脂、以及甲 酚甲醛樹脂之環氧樹脂中至少選出一種。 2 .如申請專利第1項之鑲塡樹脂’其中係藉由將黑色、青 色、綠色、紅色、橘色、黃色、紫色中任一種顏色作爲 基調顏色而進行著色。
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-
2001
- 2001-11-19 JP JP2001352496A patent/JP4038363B2/ja not_active Expired - Lifetime
- 2001-12-20 TW TW90131630A patent/TW539693B/zh not_active IP Right Cessation
- 2001-12-21 US US10/024,601 patent/US6680123B2/en not_active Expired - Lifetime
Also Published As
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US20020147264A1 (en) | 2002-10-10 |
US6680123B2 (en) | 2004-01-20 |
JP2002317121A (ja) | 2002-10-31 |
JP4038363B2 (ja) | 2008-01-23 |
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