TW535179B - Electronic device with electrode and its manufacture - Google Patents

Electronic device with electrode and its manufacture Download PDF

Info

Publication number: TW535179B
Authority: TW; Taiwan
Prior art keywords: layer; electronic component; patent application; scope; item
Prior art date: 2001-10-26

Application number

TW091104016A

Other languages

English (en)

Chinese (zh)

Inventor

Kenji Maruyama

Masao Kondo

Masaki Kurusawa

Original Assignee

Fujitsu Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2001-10-26

Filing date

2002-03-05

Publication date

2003-06-01

2002-03-05 Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd

2003-06-01 Application granted granted Critical

2003-06-01 Publication of TW535179B publication Critical patent/TW535179B/zh

Links

238000004519 manufacturing process Methods 0.000 title claims abstract description 19
229910052751 metal Inorganic materials 0.000 claims description 25
239000002184 metal Substances 0.000 claims description 25
238000000034 method Methods 0.000 claims description 18
239000002994 raw material Substances 0.000 claims description 18
239000000758 substrate Substances 0.000 claims description 17
238000005229 chemical vapour deposition Methods 0.000 claims description 6
239000004065 semiconductor Substances 0.000 claims description 6
-1 isopropyloxy Chemical group 0.000 claims description 3
150000001875 compounds Chemical class 0.000 claims 2
229910052769 Ytterbium Inorganic materials 0.000 claims 1
230000005611 electricity Effects 0.000 claims 1
150000004702 methyl esters Chemical class 0.000 claims 1
SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical group [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 claims 1
238000007747 plating Methods 0.000 claims 1
NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims 1
230000010287 polarization Effects 0.000 abstract description 18
229910002785 ReO3 Inorganic materials 0.000 abstract 3
YSZJKUDBYALHQE-UHFFFAOYSA-N rhenium trioxide Chemical compound O=[Re](=O)=O YSZJKUDBYALHQE-UHFFFAOYSA-N 0.000 abstract 3
239000000463 material Substances 0.000 description 26
239000007789 gas Substances 0.000 description 23
239000003990 capacitor Substances 0.000 description 17
239000007788 liquid Substances 0.000 description 17
WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 14
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
229910052814 silicon oxide Inorganic materials 0.000 description 9
239000000126 substance Substances 0.000 description 8
230000000694 effects Effects 0.000 description 7
239000006200 vaporizer Substances 0.000 description 7
239000012159 carrier gas Substances 0.000 description 6
238000000151 deposition Methods 0.000 description 6
238000010586 diagram Methods 0.000 description 6
239000010408 film Substances 0.000 description 6
238000006243 chemical reaction Methods 0.000 description 5
239000010409 thin film Substances 0.000 description 5
239000010936 titanium Substances 0.000 description 5
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
230000008021 deposition Effects 0.000 description 4
239000001301 oxygen Substances 0.000 description 4
229910052760 oxygen Inorganic materials 0.000 description 4
229910021417 amorphous silicon Inorganic materials 0.000 description 3
230000004888 barrier function Effects 0.000 description 3
239000013078 crystal Substances 0.000 description 3
238000000605 extraction Methods 0.000 description 3
238000000926 separation method Methods 0.000 description 3
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
238000004544 sputter deposition Methods 0.000 description 3
239000004575 stone Substances 0.000 description 3
229910052581 Si3N4 Inorganic materials 0.000 description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
239000001307 helium Substances 0.000 description 2
229910052734 helium Inorganic materials 0.000 description 2
SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 2
239000011344 liquid material Substances 0.000 description 2
229910044991 metal oxide Inorganic materials 0.000 description 2
150000004706 metal oxides Chemical class 0.000 description 2
150000002739 metals Chemical class 0.000 description 2
239000000203 mixture Substances 0.000 description 2
230000003647 oxidation Effects 0.000 description 2
238000007254 oxidation reaction Methods 0.000 description 2
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
229910052710 silicon Inorganic materials 0.000 description 2
239000010703 silicon Substances 0.000 description 2
239000013077 target material Substances 0.000 description 2
229910052719 titanium Inorganic materials 0.000 description 2
229910052726 zirconium Inorganic materials 0.000 description 2
GALDMESQGNRJGE-UHFFFAOYSA-N 3,3,5,5-tetramethylheptane Chemical compound CCC(C)(C)CC(C)(C)CC GALDMESQGNRJGE-UHFFFAOYSA-N 0.000 description 1
229910052691 Erbium Inorganic materials 0.000 description 1
229910004356 Ti Raw Inorganic materials 0.000 description 1
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
239000000428 dust Substances 0.000 description 1
239000007772 electrode material Substances 0.000 description 1
238000004945 emulsification Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
238000005530 etching Methods 0.000 description 1
230000006870 function Effects 0.000 description 1
210000004907 gland Anatomy 0.000 description 1
229910000449 hafnium oxide Inorganic materials 0.000 description 1
WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
239000012535 impurity Substances 0.000 description 1
238000009413 insulation Methods 0.000 description 1
238000005468 ion implantation Methods 0.000 description 1
229910052741 iridium Inorganic materials 0.000 description 1
GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
230000014759 maintenance of location Effects 0.000 description 1
239000013212 metal-organic material Substances 0.000 description 1
239000011368 organic material Substances 0.000 description 1
238000005192 partition Methods 0.000 description 1
ISWSIDIOOBJBQZ-UHFFFAOYSA-M phenolate Chemical compound [O-]C1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-M 0.000 description 1
229910052697 platinum Inorganic materials 0.000 description 1
238000005498 polishing Methods 0.000 description 1
238000005381 potential energy Methods 0.000 description 1
230000008569 process Effects 0.000 description 1
229910052702 rhenium Inorganic materials 0.000 description 1
WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
229910021332 silicide Inorganic materials 0.000 description 1
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
239000007787 solid Substances 0.000 description 1
238000006467 substitution reaction Methods 0.000 description 1
YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
229910052861 titanite Inorganic materials 0.000 description 1
230000009466 transformation Effects 0.000 description 1
230000001052 transient effect Effects 0.000 description 1
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
229910052721 tungsten Inorganic materials 0.000 description 1
239000010937 tungsten Substances 0.000 description 1
238000009834 vaporization Methods 0.000 description 1
230000008016 vaporization Effects 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Semiconductor Memories (AREA)
Formation Of Insulating Films (AREA)
Chemical Vapour Deposition (AREA)
Ceramic Capacitors (AREA)

TW091104016A 2001-10-26 2002-03-05 Electronic device with electrode and its manufacture TW535179B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2001329688A JP2003133531A (ja)	2001-10-26	2001-10-26	電子装置とその製造方法

Publications (1)

Publication Number	Publication Date
TW535179B true TW535179B (en)	2003-06-01

Family

ID=19145544

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW091104016A TW535179B (en)	2001-10-26	2002-03-05	Electronic device with electrode and its manufacture

Country Status (7)

Country	Link
US (2)	US6744085B2 (fr)
EP (1)	EP1306889B1 (fr)
JP (1)	JP2003133531A (fr)
KR (1)	KR20030035761A (fr)
CN (1)	CN1212665C (fr)
DE (1)	DE60217610T2 (fr)
TW (1)	TW535179B (fr)

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US7494927B2 (en)	2000-05-15	2009-02-24	Asm International N.V.	Method of growing electrical conductors
JP2004356313A (ja) *	2003-05-28	2004-12-16	Seiko Epson Corp	半導体装置及びその製造方法
WO2004109804A1 (fr) *	2003-06-06	2004-12-16	Fujitsu Limited	Procede de fabrication de dispositif semi-conducteur
JP4082711B2 (ja)	2004-03-12	2008-04-30	独立行政法人科学技術振興機構	磁気抵抗素子及びその製造方法
JP2006073648A (ja)	2004-08-31	2006-03-16	Fujitsu Ltd	半導体装置及びその製造方法
US8025922B2 (en)	2005-03-15	2011-09-27	Asm International N.V.	Enhanced deposition of noble metals
US7666773B2 (en)	2005-03-15	2010-02-23	Asm International N.V.	Selective deposition of noble metal thin films
KR100725081B1 (ko) *	2005-06-14	2007-06-08	후지쯔 가부시끼가이샤	반도체 장치의 제조 방법
US20070014919A1 (en) *	2005-07-15	2007-01-18	Jani Hamalainen	Atomic layer deposition of noble metal oxides
JP5211558B2 (ja) *	2007-06-18	2013-06-12	富士通セミコンダクター株式会社	半導体装置の製造方法
US20090087339A1 (en) *	2007-09-28	2009-04-02	Asm Japan K.K.	METHOD FOR FORMING RUTHENIUM COMPLEX FILM USING Beta-DIKETONE-COORDINATED RUTHENIUM PRECURSOR
JP4888418B2 (ja) *	2008-02-29	2012-02-29	ソニー株式会社	可変容量素子とその制御方法、電子デバイス及び通信モバイル機器
JP5440493B2 (ja)	2008-03-31	2014-03-12	富士通セミコンダクター株式会社	強誘電体メモリとその製造方法、及び強誘電体キャパシタの製造方法
US8084104B2 (en) *	2008-08-29	2011-12-27	Asm Japan K.K.	Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
US8133555B2 (en)	2008-10-14	2012-03-13	Asm Japan K.K.	Method for forming metal film by ALD using beta-diketone metal complex
US9379011B2 (en)	2008-12-19	2016-06-28	Asm International N.V.	Methods for depositing nickel films and for making nickel silicide and nickel germanide
US20110020546A1 (en) *	2009-05-15	2011-01-27	Asm International N.V.	Low Temperature ALD of Noble Metals
KR200458200Y1 (ko) *	2010-04-06	2012-01-30	오길식	분해가 어려운 커버 유동식 엘이디 천정등
CN102151526A (zh) *	2010-07-23	2011-08-17	兰州理工大学	调控钙钛矿锰氧化物铁磁转变温度的方法
US8871617B2 (en)	2011-04-22	2014-10-28	Asm Ip Holding B.V.	Deposition and reduction of mixed metal oxide thin films
US9761785B2 (en)	2011-10-17	2017-09-12	The United States Of America As Represented By The Secretary Of The Army	Stylo-epitaxial piezoelectric and ferroelectric devices and method of manufacturing
US8866367B2 (en)	2011-10-17	2014-10-21	The United States Of America As Represented By The Secretary Of The Army	Thermally oxidized seed layers for the production of {001} textured electrodes and PZT devices and method of making
US9607842B1 (en)	2015-10-02	2017-03-28	Asm Ip Holding B.V.	Methods of forming metal silicides
US9876018B2 (en) *	2015-12-03	2018-01-23	Micron Technology, Inc.	Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric material
US10896950B2 (en) *	2017-02-27	2021-01-19	Nxp Usa, Inc.	Method and apparatus for a thin film dielectric stack
US10923286B2 (en)	2018-02-21	2021-02-16	Nxp Usa, Inc.	Method and apparatus for compensating for high thermal expansion coefficient mismatch of a stacked device
CN115959905B (zh) *	2022-12-07	2023-08-18	南京航空航天大学	一种钛锆酸铅与氧化镁垂直自组装纳米复合介电储能薄膜及其制备方法

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2001
- 2001-10-26 JP JP2001329688A patent/JP2003133531A/ja active Pending
2002
- 2002-02-19 US US10/076,349 patent/US6744085B2/en not_active Expired - Fee Related
- 2002-03-05 TW TW091104016A patent/TW535179B/zh not_active IP Right Cessation
- 2002-03-15 KR KR1020020014011A patent/KR20030035761A/ko active IP Right Grant
- 2002-03-27 DE DE60217610T patent/DE60217610T2/de not_active Expired - Fee Related
- 2002-03-27 EP EP02252255A patent/EP1306889B1/fr not_active Expired - Fee Related
- 2002-03-28 CN CNB021083045A patent/CN1212665C/zh not_active Expired - Fee Related
2004
- 2004-04-12 US US10/821,841 patent/US7153705B2/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
US7153705B2 (en)	2006-12-26
EP1306889B1 (fr)	2007-01-17
JP2003133531A (ja)	2003-05-09
US20040195605A1 (en)	2004-10-07
CN1414636A (zh)	2003-04-30
EP1306889A2 (fr)	2003-05-02
DE60217610D1 (de)	2007-03-08
CN1212665C (zh)	2005-07-27
US6744085B2 (en)	2004-06-01
DE60217610T2 (de)	2007-10-25
KR20030035761A (ko)	2003-05-09
US20030080363A1 (en)	2003-05-01
EP1306889A3 (fr)	2004-08-18

Legal Events

Date	Code	Title	Description
2003-10-16	GD4A	Issue of patent certificate for granted invention patent
2009-03-01	MM4A	Annulment or lapse of patent due to non-payment of fees

Publication	Publication Date	Title
TW535179B (en)	2003-06-01	Electronic device with electrode and its manufacture
TW434837B (en)	2001-05-16	Method and apparatus for superior step coverage and interface control for high K dielectric capacitors and related electrodes
US5998819A (en)	1999-12-07	Thin ferroelectric film element having a multi-layered thin ferroelectric film and method for manufacturing the same
JP2000353790A (ja)	2000-12-19	強誘電体アプリケーションのためのＰｂ５Ｇｅ３Ｏ１１薄膜の化学蒸着法
US20020100959A1 (en)	2002-08-01	Capacitor for semiconductor memory device and method of manufacturing the same
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US6777740B2 (en)	2004-08-17	Capacitor for semiconductor memory device and method of manufacturing the same
JP4221526B2 (ja)	2009-02-12	金属酸化物を基板表面上に形成する成膜方法
JP2000022105A (ja)	2000-01-21	半導体装置の製造方法
JP3173451B2 (ja)	2001-06-04	半導体装置及びその製造方法
JP2003163284A (ja)	2003-06-06	半導体素子のキャパシタ及びその製造方法
JP4616830B2 (ja)	2011-01-19	半導体装置の製造方法
CN1954430B (zh)	2010-12-01	半导体装置及其制造方法
JP2007329286A (ja)	2007-12-20	半導体装置、およびその製造方法
JPH0513676A (ja)	1993-01-22	半導体装置
JP2990824B2 (ja)	1999-12-13	半導体装置の製造方法
JP2007027739A (ja)	2007-02-01	強誘電膜上で貴金属膜の蒸着率を向上させうる物質膜の形成方法、この方法を利用した強誘電膜キャパシタの製造方法及びこの方法で形成された強誘電膜キャパシタ、このような強誘電膜キャパシタを備える半導体メモリ装置及びその製造方法
JPH11204734A (ja)	1999-07-30	電極、キャパシタおよびメモリならびにそれらの製造方法
JPH1197630A (ja)	1999-04-09	強誘電体薄膜の製造方法及び強誘電体メモリ素子
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JP5360023B2 (ja)	2013-12-04	半導体装置及びその製造方法
JP2009054753A (ja)	2009-03-12	強誘電体装置及びその製造方法