經濟部中央標準局員工消費合作社印製 526359 Λ 7 ___ Β7 五、發明説明（彳） [發明之目的] [本發明及與本發明相關之先行技藝之範_】 本發明係關於反射傳輸型薄膜電晶體顯示器（以下稱爲 ”TFT_LCD”）及其形成方法。 液晶顯示器（LCD)可分成反射型LCD及傳輸型乙(：1：)。 在反射型LCD中，金屬反射層形成爲像素電極二反射外 部入射光以顯示影像。在傳輸型]1(：：〇中，作爲獨立光源 之逆光安裝於嵌板之背面。調整液晶排列以使光源之光線 能通過嵌板或禁止其通過，實現影像及顏色。因此，傳輸 型LCD使用傳輸型層（即，透明傳導層）作爲像素電極。 減少電力消耗及使用外部光線實現高品質影像之各種方 式示於例如需要大屏幕及高品質影像之筆記型電腦。夏普 電子（Sharp Electrics )公司推出一種反射傳輸型L c D以得 適於使用者環境之能見度，儘管周邊亮度改變亦然。反射 傳輸型LCD具有反射LCD與傳輸LCD之優點。 在夏普電子公司之反射傳輸型LCD中，傳輸層之像素電 極耦合至源極電極，傳統T F T。保護層堆疊在像素電極 上。接觸孔形成於保護層。金屬層堆疊在具有欲佈型之接 觸孔之保護層上，透過接觸孔耦合源極電極至反射層之像 素電極。反射層之像素電極於像素區域内被局部移除以界 定傳輸區（窗或地帶），其中僅傳輸層之像素電極存在或留 下。傳輸地帶被界定於傳輸窗，反射地帶界定於形成反射 層之區内。 爲了界定傳輸窗於具有形成在絕緣層上之反射層及傳輸 本紙張尺度適用中國國家標隼（CMS ) A4規格（210X 297公釐） (請先閱讀背面之注意事項再填寫本頁)Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 526359 Λ 7 ___ B7 V. Description of the invention (彳) [Objective of the invention] [This invention and the model of the prior art related to this invention _] This invention is about reflective transmission film Transistor display (hereinafter referred to as "TFT_LCD") and its forming method. Liquid crystal display (LCD) can be divided into reflective LCD and transmission type B (: 1 :). In a reflective LCD, a metal reflective layer is formed such that the pixel electrode reflects external incident light to display an image. In the transmission type] 1 (:: 〇, the backlight as an independent light source is installed on the back of the panel. Adjust the liquid crystal arrangement so that the light from the light source can pass through the panel or forbid it to pass through to achieve images and colors. Therefore, the transmission LCD Use a transmission-type layer (ie, a transparent conductive layer) as the pixel electrode. Various ways to reduce power consumption and use external light to achieve high-quality images are shown in, for example, notebook computers that require large screens and high-quality images. Sharp Electrics The company introduced a reflective transmission type L c D to obtain visibility suitable for the user's environment, even if the surrounding brightness changes. The reflective transmission type LCD has the advantages of reflective LCD and transmission LCD. In Sharp Electronics' reflective transmission type LCD, The pixel electrode of the transmission layer is coupled to the source electrode, the traditional TFT. The protective layer is stacked on the pixel electrode. The contact hole is formed on the protective layer. The metal layer is stacked on the protective layer with the contact hole of the desired type, and the source is coupled through the contact hole. Electrode electrode to the pixel electrode of the reflective layer. The pixel electrode of the reflective layer is partially removed in the pixel area to define the transmission Area (window or zone) in which only the pixel electrode of the transmission layer is present or left. The transmission zone is defined in the transmission window, and the reflection zone is defined in the area forming the reflection layer. In order to define the transmission window in the Reflective layer and transmission This paper size is applicable to China National Standard (CMS) A4 (210X 297 mm) (Please read the precautions on the back before filling this page)
526359 A 7 B7 五、發明説明（2 ) 層之像素電極，一種形成反射傳輸型TFT-LCD之方法需要 附加曝光步驟以除去在傳輸窗之反射電極。因此，反射傳 輸型TFT-LCD之高加工成本遠超過傳統傳輸型或反射型 LCD。又，像素電極之材料亦造成問題。換言之，主要 用於傳輸層之像素電極之銦-金屬-氧化物基因之ITO對主 要用於傳輸層之像素電極之含鋁金屬起作用，造成由氧化 物製成之絕緣層之形成。在像素電極佈型中，暴露像素電 極之表面以造成打光”電池效應"，使鋁之反射層被相當 侵襲而降低反射率。 [發明之概述]526359 A 7 B7 V. Description of the invention (2) The pixel electrode of the layer, a method of forming a reflective transmission TFT-LCD requires an additional exposure step to remove the reflective electrode in the transmission window. Therefore, the high processing cost of the reflection transmission type TFT-LCD is much higher than that of the conventional transmission type or reflection type LCD. In addition, the materials of the pixel electrodes also cause problems. In other words, ITO of the indium-metal-oxide gene mainly used for the pixel electrode of the transmission layer acts on the aluminum-containing metal mainly used for the pixel electrode of the transmission layer, resulting in the formation of an insulating layer made of an oxide. In the pixel electrode cloth type, the surface of the pixel electrode is exposed to cause lighting "battery effect", and the aluminum reflective layer is considerably attacked to reduce the reflectance. [Summary of the Invention]
因此，本發明之一目的爲提供一種形成可減少加工成本 之反射傳輸型TFT-LCD，及藉以形成反射傳輸型TFT-LCD 之方法。 本發明之另一目的爲一種形成可消除由”電池效應”在反 射層與傳輸層間所造成問題之反射傳輸型TFT-LCD，及藉 以形成反射傳輸型TFT-LCD之方法。 [發明之構造] 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 根據本發明之一態樣，反射傳輸型TFT-LCD係由薄膜電 晶體及其形成於基板之整個表面上之互連物所構成。TFT-LCD包含絕緣層，其中形成通孔以暴露一部份薄膜電晶體 之源極電極、覆蓋像素電極整個區域之透明電極圖案及形 成於覆蓋一部份像素區域之絕緣層上之不透明電極圖案。 不透明電極圖案具有至少一個由反射電極層製成之反射 型電極圖案。若附加地具有由另一材料層製成之圖案時， -5- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） 526359 A 7 B7 五、發明説明（3 反射型電極圖案位於最高地方。較佳的是，透明電極係由 ITO (氧化錫銦）製成及反射型電極由鋁或含鋁材料如鋁 敛，不排除含銀材料如APC所製成。在不透明電極圖案 中，可堆叠中間電極層以形成—層與反射型電極層一起。 中間電極層可由鎢鉬或鉻製成，使其可抑制"電池效應,, ’其在佈型透明電極層及反射型電極層時造成嚴重問題。 傳統上，"溥膜電晶體及其互連物"耦合至包含閘極電極 與問極墊片之閘極互連物、源極電極及及極電極。又， "薄膜電晶體及其i連物，，包含資料互連物、#合至没極 電極之汲極區、耦合至源極電極之源極區、具有通道區在 源極區與汲極區間之半導體圖案及閘極絕緣層。 可形成在像素電極區域外僅具透明電極圖案之傳輸區域 成爲不透明電極圖案之窗形。絕緣層可爲感光感應層。較 佳的是，絕緣層之厚度相同於液晶層之厚度。若絕緣層在 形成通孔之步驟中自僅具透明電極層之傳輸區域除去時， 液晶排列使光線能最大量通過傳輸區域並可在反射區域内 反射。較佳的是，壓花形成於絕緣層之頂部上以製造聚集 光線之微透鏡。 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁 訂 # 根據本發明之另一態樣，一種形成傳輸反射型TFT_lcd 之万法包括在基板形成膜薄電晶體及其互連物；在基板堆 疊及佈型絕緣層以形成暴露薄膜電晶體之源極電極的接觸 孔’·堆疊透明電極層在絕緣層上；堆疊包含至少反射電極 層之透明電極層在透明電極層上，反射電極層被形成在不 透明電極層上；塗佈光阻層在反射電極層上，對除去像素 -6 - K紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） 526359 Λ 7 —____ Β7五、發明説明（4 ) 麵濟部中央標準局員工消費合作社印焚 電極（區域實施完全曝光，及對像素電極區域外面之傳輸 區域實施差示曝光及顯影’由是形成對應於像素電極之雙 階梯光阻圖案；使用雙階梯光阻圖案作爲蝕刻光罩除去不 透明電極層及透明電極；照樣地除去雙階梯光阻圖案至固 足厚度以形成單梯光阻圖案，其中光阻劑係在局部曝光傳 輸區域除去；及使用單階梯光阻劑圖案作爲蚀刻光罩姓刻 不透明電極層以形成僅具透明電極層之像素電極之步驟。 不透明電極層係藉堆疊金屬如鉻或鎢鉬之層作爲中間電 極層及由良好反射率之含鋁材料製成或僅由反射電極層製 成之反射電極層所形成。 差不曝光係使用光罩藉連續暴露光阻圖案固定時間 Τ1，其中圖案被形成至絕對曝光區域，及使用光罩固定 時間Τ2，其中圖案被形成至絕對曝光區域及局部曝光區 域實施。 較佳的疋，形成L C D之大部份蝕刻係用濕蝕刻或各向異 性乾蝕刻技術實施。 、 以下參照附圖更加詳述本發明。 [附圖之簡單説明] 圖1至圖7爲截面圖，顯示根據本發明形成反射傳輸型 TFT-LCD之步驟。 圖8爲俯視圖’顯示連同圖7之狀態之TFT-Lcd之像素區 域陣列。 圖9爲截面圖，顯示根據本發明之閘極墊片部份與資料 塾片部份之側截面。 本紙張尺度適州中國國家標準（CNS ) Α4規格（υ〇χ 297公釐） (請先閱讀背面之注意事項再填寫本頁} -裝· 、11 € ’ I I- 1 526359 Λ 7 Β7五、發明説明（S ) 經濟部中央標準局員工消费合作社印製 現參照圖1，薄膜電晶體構造最 安， 、瑕仞形成於基板。閘極圖 案u形成於玻璃基川。閘極圖案㈣與鉻 ^單-金屬層所形成。用閘極圖案u，可形成傳統儲存 '泉。通常，閘極絕緣層13係使用化學汽相沈積（C 術藉堆疊氧化梦層或氮化硬層而形成在間極圖案u上。 非晶砂層係使用CVD技術堆疊在間極絕緣層13上。由接 有雜質之非晶矽製成之歐姆接觸層及源極/汲極電椏層按 序堆疊在非晶矽層上。源極/汲極電極層被佈型以按^形 成源極/汲極電極19及資料線（圖中未示）。蝕刻歐姆接觸 層及非晶矽活性層以形成薄膜電晶體結構。在通道區内， 完全蝕刻源極/汲極層及歐姆接觸層，而部份除去活性 層。薄膜電晶體區域及資料線區域係由蝕刻光罩保護，及 形成歐姆接觸圖案1 7與活性區圖案、5。在該實施例中， 使用四個光罩方式以形成底部閘極方式之TFT_LCD，其中 活性區係由非晶碎製成。本發明可應用於不同方法（例 如’五個光罩方式）或不同形狀之頂閘極型。 又’此方式可應用於低溫多晶石夕型TFT-LCD，其中活性 區係在形成非晶矽層後透過雷射退火由多晶矽製成。多晶 石夕型TFT-LCD通常使用頂閘極方式。在一實例（圖未示） 中，非晶矽層形成於基板。使用雷射退火，將非晶矽層改 變成多晶矽層。蚀刻多晶矽層以形成活性區。閘極絕緣層 係由C VD技術堆疊之氧化矽或氮化矽製成，並堆疊在活 性區上。閘極互連物形成於閘極絕緣層上方。概念上，間 極互連物包含閘極電極及閘極墊片。使用C V D技術，氧 -8 - 本紙張尺度適用中國國家標準（CNS ) A4規格（21 Ox 297公釐） (請先閱讀背面之注意事項再填寫本頁} -裝 訂 526359 A7 B7 五、發明説明（6 ) 化矽層王要堆疊在閘極電極上以形成層間介電電極層。層 間介電電極層與閘極絕緣層係在源極/汲極區除去以形成 暴露活性區之接觸孔。使用濺鍍技術，鎢鉬、鋁銨及鎢鉬 I三層堆疊在基板之整個表面上。三層係利用相同蝕刻罩 佈型以形成源極/汲極電極及資料線。然後，薄膜電晶體 結構完成於基板。 a 現參照圖2，絕緣層21堆疊在形成有薄膜電晶體之基板 上。絕緣層2 1可爲感光有機絕緣層。絕緣層之厚度爲約4 微米，其類似於液晶層者。堆疊係利用類似於光阻塗佈之 方式製成。實施佈型以形成暴露薄膜電晶體之源極電極。 因為絕緣層2 1受欲佈型之曝光及顯像，所以不需要分離 的姓刻。 壓花微透鏡可製成供作爲聚光透鏡作用至反射區域之反 射光。此外，可改良預定像素電極區域（即，傳輸區域之 絕緣層2 1。若絕緣層2 1在傳輸區域除去時，通常的極化 光遭受對應於波長之一半的相改變。此使反射區域與傳輸 區域作成最大亮度。 參照圖3，IZO (氧化鋅銦）之透明電極層23在基板1 〇之 整個表面上形成至厚度爲1〇〇〇A至150〇a。鎢鉬之中間電 極層25與铭之反射電極層27分別按序形成至厚度爲5 〇〇 A 至ΙΟΟΟΑ及1500A。此等傳導層係使用傳統濺鍍方式形 成。中間電極層25不會被形成。反射電極層27可由銀合 金"A CP ·’製成，透明電極層2 3可由” ITO ”製成。然而， 其意外地直接在” ITO ”上形成含鋁材料。 -9- 本紙張尺度適用中國國家標準（CNS ) Α4規格（2ι〇χ 297公釐） -- (請先閲讀背面之注意事項再填寫本頁)Therefore, an object of the present invention is to provide a reflection transmission type TFT-LCD capable of reducing processing costs, and a method for forming a reflection transmission type TFT-LCD. Another object of the present invention is to provide a reflection transmission type TFT-LCD which can eliminate the problem caused by the "battery effect" between a reflection layer and a transmission layer, and a method for forming a reflection transmission type TFT-LCD. [Structure of Invention] Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the notes on the back before filling this page) According to one aspect of the present invention, the reflective transmission TFT-LCD is made of a thin film transistor and its It is composed of interconnects on the entire surface of the substrate. The TFT-LCD includes an insulating layer, in which a through hole is formed to expose a portion of a source electrode of a thin film transistor, a transparent electrode pattern covering an entire area of a pixel electrode, and an opaque electrode pattern formed on an insulating layer covering a portion of a pixel area . The opaque electrode pattern has at least one reflective electrode pattern made of a reflective electrode layer. If there is an additional pattern made of another material layer, this paper size applies to Chinese National Standard (CNS) A4 specification (210X 297 mm) 526359 A 7 B7 V. Description of the invention (3 Reflective electrode pattern It is located at the highest place. Preferably, the transparent electrode is made of ITO (Indium Tin Oxide) and the reflective electrode is made of aluminum or aluminum-containing material such as aluminum. It does not exclude silver-containing material such as APC. In the opaque electrode pattern In the middle, the middle electrode layer can be stacked to form a layer together with the reflective electrode layer. The middle electrode layer can be made of tungsten, molybdenum or chromium, so that it can suppress " battery effect, " The electrode layer causes serious problems. Traditionally, "溥 film transistors and their interconnects" are coupled to a gate interconnect, a source electrode, and an electrode that include a gate electrode and an interposer pad. &Quot; Thin-film transistor and its connector, including data interconnects, a drain region coupled to a non-electrode, a source region coupled to a source electrode, a channel region in the source region and a drain electrode Interval semiconductor pattern and gate insulation layer. A transmission region having only a transparent electrode pattern formed outside the pixel electrode region becomes a window shape of an opaque electrode pattern. The insulating layer may be a photosensitive sensing layer. Preferably, the thickness of the insulating layer is the same as the thickness of the liquid crystal layer. When the step of forming the through hole is removed from the transmission area with only the transparent electrode layer, the liquid crystal array allows the maximum amount of light to pass through the transmission area and be reflected in the reflection area. Preferably, embossing is formed on top of the insulating layer To manufacture micro lenses that collect light. Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling out this page) # According to another aspect of the present invention, a method for forming a transmission reflective TFT_lcd This includes forming a thin film transistor and its interconnects on the substrate; stacking and cloth-type insulating layers on the substrate to form a contact hole that exposes the source electrode of the thin film transistor; · stacking transparent electrode layers on the insulating layer; The transparent electrode layer of the electrode layer is on the transparent electrode layer, and the reflective electrode layer is formed on the opaque electrode layer; On the polar layer, the Chinese National Standard (CNS) A4 size (210X 297 mm) is applicable to the paper size of -6-K paper. 526359 Λ 7 —____ Β7 V. Description of the invention (4) Staff Consumer Cooperative of the Central Standards Bureau of the Ministry of Health Printed electrode (full exposure of the area, and differential exposure and development of the transmission area outside the pixel electrode area) are formed by forming a two-step photoresist pattern corresponding to the pixel electrode; using the two-step photoresist pattern as an etch mask to remove Opaque electrode layer and transparent electrode; remove the double-step photoresist pattern to a sufficient thickness to form a single-step photoresist pattern, wherein the photoresist is removed in the partial exposure transmission area; and use the single-step photoresist pattern as the etching light Masking the opaque electrode layer to form a pixel electrode with only a transparent electrode layer. The opaque electrode layer is formed by a layer of a stacked metal such as chromium or tungsten molybdenum as an intermediate electrode layer and a reflective electrode layer made of an aluminum-containing material having a good reflectance or only a reflective electrode layer. The poor exposure is performed by using a photomask to continuously expose the photoresist pattern for a fixed time T1, in which the pattern is formed to the absolute exposure area, and using a photomask to fix the time T2, in which the pattern is formed to the absolute exposure area and the partial exposure area. Preferably, most of the etching to form the LCD is performed using wet etching or anisotropic dry etching techniques. The present invention is described in more detail below with reference to the drawings. [Brief Description of the Drawings] Figs. 1 to 7 are cross-sectional views showing steps for forming a reflective transmission type TFT-LCD according to the present invention. Fig. 8 is a plan view 'showing a pixel area array of the TFT-Lcd together with the state of Fig. 7. Fig. 9 is a cross-sectional view showing a side cross-section of a gate pad portion and a data cymbal portion according to the present invention. The size of this paper is China State Standard (CNS) Α4 size (υ〇χ 297mm) (Please read the precautions on the back before filling out this page}-Packing ·, 11 € 'I I- 1 526359 Λ 7 Β7 五1. Description of the invention (S) Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. Referring now to Figure 1, the thin-film transistor structure is the safest, and the defects are formed on the substrate. The gate pattern u is formed on the glass substrate. Chromium single-metal layer. The gate pattern u can be used to form a traditional storage spring. Generally, the gate insulating layer 13 is formed by chemical vapor deposition (C technique by stacking an oxide dream layer or a nitrided hard layer). On the interlayer pattern u. The amorphous sand layer is stacked on the interlayer insulating layer 13 using CVD technology. An ohmic contact layer made of amorphous silicon connected with impurities and a source / drain electrode are sequentially stacked on On the amorphous silicon layer. The source / drain electrode layer is patterned to form the source / drain electrode 19 and the data line (not shown). The ohmic contact layer and the amorphous silicon active layer are etched to form a thin film. Transistor structure. In the channel area, the source / drain layer and the ohmic contact are completely etched. And the active layer is partially removed. The thin film transistor region and the data line region are protected by an etch mask, and an ohmic contact pattern 17 and an active region pattern 5 are formed. In this embodiment, four mask patterns are used. In order to form a bottom gate TFT_LCD, the active region is made of amorphous chips. The present invention can be applied to different methods (such as the 'five mask mode') or different shapes of top gate type. It is applied to low temperature polycrystalline silicon TFT-LCD, in which the active region is made of polycrystalline silicon through laser annealing after forming an amorphous silicon layer. Polycrystalline silicon TFT-LCD usually uses a top-gate method. An example (Not shown), an amorphous silicon layer is formed on the substrate. Laser annealing is used to change the amorphous silicon layer into a polycrystalline silicon layer. The polycrystalline silicon layer is etched to form an active region. The gate insulating layer is oxidized by C VD technology stacking Made of silicon or silicon nitride and stacked on the active area. The gate interconnect is formed over the gate insulation. Conceptually, the inter-interconnect includes a gate electrode and a gate pad. Using CVD technology, Oxygen-8 China National Standard (CNS) A4 specification (21 Ox 297 mm) (Please read the precautions on the back before filling out this page}-Binding 526359 A7 B7 V. Description of the invention (6) The silicon silicon layer is to be stacked on the gate electrode To form an interlayer dielectric electrode layer. The interlayer dielectric electrode layer and the gate insulating layer are removed in the source / drain region to form a contact hole exposing the active region. Using sputtering technology, tungsten molybdenum, aluminum ammonium, and tungsten molybdenum Three layers of I are stacked on the entire surface of the substrate. The three layers are formed using the same etch mask to form the source / drain electrodes and data lines. Then, the thin film transistor structure is completed on the substrate. Referring now to FIG. 2, an insulating layer 21 is stacked on a substrate on which a thin film transistor is formed. The insulating layer 21 may be a photosensitive organic insulating layer. The thickness of the insulating layer is about 4 microns, which is similar to that of a liquid crystal layer. The stack is made using a method similar to photoresist coating. The cloth pattern is implemented to form a source electrode exposing a thin film transistor. Because the insulating layer 21 is exposed and developed by the desired cloth type, no separate name engraving is required. The embossed microlenses can be made to reflect light that acts as a condenser lens on the reflective area. In addition, the predetermined pixel electrode region (that is, the insulating layer 21 of the transmission region can be improved. If the insulating layer 21 is removed in the transmission region, ordinary polarized light undergoes a phase change corresponding to one-half the wavelength. This makes the reflection region and The transmission area is made the maximum brightness. Referring to FIG. 3, a transparent electrode layer 23 of IZO (Indium Zinc Oxide) is formed on the entire surface of the substrate 10 to a thickness of 1000 A to 150 A. The intermediate electrode layer 25 of tungsten and molybdenum The reflective electrode layer 27 and Ming Zhi are sequentially formed to a thickness of 500A to 100A and 1500A. These conductive layers are formed using conventional sputtering. The intermediate electrode layer 25 is not formed. The reflective electrode layer 27 may be made of silver. Made of alloy " A CP · ', the transparent electrode layer 23 may be made of "ITO". However, it accidentally forms an aluminum-containing material directly on the "ITO". -9- This paper size applies to the Chinese national standard (CNS ) Α4 size (2ι〇χ 297 mm)-(Please read the precautions on the back before filling this page)
，1T 4 經濟部中央標準局員工消費合作社印袈 526359 Λ7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明（ 現參照圖4 ’光阻層塗佈在鋁反射電極層2 7上。差示曝 光利用光罩實施至各區域，其中實施完全曝光至未形成像 素電極之部份，而實施局部曝光至形成像素電極之部份。 在芫全曝光中，光阻層暴露至光源一段充分時間。在局部 曝光中’光阻層暴露至光源一段不足時間。例如，利用透 明光罩1對完全曝露部份實施第一曝光一段預定時間τ 1。 然後，利用透明光罩2對完全暴露部份及部份曝露部份實 施第二曝光一段預定時間Τ2。時間τι及T2係根據光阻劑 之種類及特性與雙階梯光阻圖案之所需步驟差異決定。在 另一不同曝光方式中，具有許多狹缝之半透明圖案或不透 明圖案之光罩可應用至局部暴露部份。 在像素電極以外之部份，光阻劑係在曝光後利用光阻劑 完全除去。隨著具有固定厚度之光阻劑之移除，雙階梯光 阻圖案3 1形成於像素電極之傳輸區域之頂面上。鉛之像 素電極層首先接觸影像劑，其可防止顯像劑侵襲暴露之像 素電極層。此乃因爲中間電極層扮演緩衝角色以抑制"電 池效應··。 現參照圖5，反射電極層2 3，中間電極層2 5及透明電極 層27係利用雙階梯光阻圖案31蝕刻，形成像素電極33， 3 5及3 7。較佳的是，此蝕刻爲各向異性乾蝕刻。此乃因 爲乾蚀刻可防止”電池效應"，同向異性蚀刻使圖案3 周圍清潔並可避免強烈侵襲。 參照圖6，雙階梯光阻圖案3丨之上部係藉實施灰末法移 除至固疋溫度一段預定時間，其中氧氣電漿作用在基板之 (請先閱讀背面之泣意事項鼻填寫本ίο -装· ir 10- 526359 經濟部中央標準局員工消費合作社印裝 五、發明説明（8 Γ:ί:二對，阻圖案31此爲-種回蚀法。若光阻劑 "° 作馬形成於像素電極之傳輸區域之低厚产光 阻圖案時，光阻劑不备勿启馇认 ^子度先 田在傳輸區域。在大量形成光阻圖 案I反射區域，單階梯亦阳固也 , 差異相同厚度。 先阻圖案41被形成與上部之階梯 參照圖7 ’反射電極層47與中間電極層45係利用僅覆蓋 像素電極之反射區域之光阻圖案41作爲蝕刻光罩蝕刻。 較佳的是，中間電極層45係由鵠銷製成。若與鉻比較， 鎢鉬更便利於蝕刻鋁反射電極層47以及中間電極層45。 車又佳的疋，此蚀刻爲各向異性乾蝕刻。但蝕刻時間應控 以減緩透明電極層之損害。然後，完成反射傳輸型像素 極，而除去剩餘光阻圖案。 圖8所示在圖7之狀態tTFT-LCD之清楚陳列，顯示沿 8之線I -1所取之側截面。儲存線5 3示於圖8而未示於 7。傳輸區域可爲形成於反射區域中間之一窗51 ,如圖 所示。或者，傳輸區域佔據反射區域之周圍的一部份。 在實施圖4至圖7之程序中，較佳的是暴露閘極之墊 部份及資料互連物。若欲暴露至墊片部份頂面之金屬層 由含銘金屬製成時，含鋁金屬會濕度氧化或腐蝕。因此 墊片部份主要由透明電極層所形成。資料墊片1 0 9及閘 墊片1 0 1於分別佈型資料互連物及閘極互連物時形成。 極絕緣層1 3與感應絕緣層2 1按序堆疊在閘極墊片1 上。若差示曝示（參照圖4至圖7)在此狀態下實施至整 部份時，墊片部份可如像素電極之傳輸區域加工爲局部 制 電 圖 圖 8 片 極 0 1 片 曝 -11 - 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 526359 Λ 7 ____Β7 五、發明説明（9 ) (請先閱讀背面之注意事項再填寫本頁) 光區域。在圖4及圖5之階段中，低厚度之光阻圖案形成 於塾片部份。此外，形成墊片圖案，其爲由反射電極層、 中間電極層及透明電極層所組成之三層。在圖6之階段 中’墊片邵份之光阻圖案被蝕刻而移除。當反射電極層與 中間電極層在圖7之階段中蝕刻時，其被蚀刻而於墊片圖 案中移除。如圖9所示，顯示沿線Η—Η及ΠΙ-ΠΙ所取之側截 面，僅有墊片6 3及7 3，各由透明電極在墊片部份組成。 因此，可防止於後續步驟中墊片部份之腐蝕。 若絕緣層被用作資料互連物與像素電極間之感應絕緣層 時，可在佈型墊片部份之感應絕緣層時實施局部蝕刻墊片 邵份之方法。若實施C 0 G (晶片/玻璃）方式時，連接球插 在墊片與驅動器終端之間。壓球以將墊片連接至驅動器終 端。若感應絕緣層與連接球之間無厚度差異時，連接球會 擠壓不足而不會露出傳導器。感應絕緣層之表面被壓花而 墊片部份係由局部蝕刻移除，完全壓下連接球而容易將驅 動器終端連接至墊片。 [發明之功效] 經濟部中央標準局員工消費合作社印製 有利的是’本發明可形成一種反射傳輸型TFT-LCD而不 用附加加工步驟。此外，本發明亦可抑制妨礙方法之現 象，例如由雙階梯層之像素電極所造成之，，電池效應”。 _ ___-12- 本紙張尺度適用中國國家標準( CNS )八4規格（210X 297公釐）1T 4 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 526359 Λ7 B7 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (Now refer to Figure 4 'The photoresist layer is coated on the aluminum reflective electrode layer 27. Differential exposure is performed to each area using a photomask, where full exposure is performed to the portion where the pixel electrode is not formed, and local exposure is performed to the portion where the pixel electrode is formed. In full exposure, the photoresist layer is fully exposed to the light source. Time. In partial exposure, the photoresist layer is exposed to the light source for a short period of time. For example, the fully exposed portion is subjected to the first exposure for a predetermined time τ 1 using the transparent mask 1. Then, the fully exposed portion is exposed using the transparent mask 2. The second and partial exposures are carried out for a predetermined period of time T2. The time τι and T2 are determined based on the difference between the type and characteristics of the photoresist and the required steps of the two-step photoresist pattern. In another different exposure method, A mask with a translucent pattern or an opaque pattern with many slits can be applied to the partially exposed part. In the part other than the pixel electrode, the photoresist is placed on After photoresist, the photoresist is completely removed. With the removal of the photoresist with a fixed thickness, a two-step photoresist pattern 31 is formed on the top surface of the transmission area of the pixel electrode. The pixel electrode layer of lead first contacts the imaging agent. It can prevent the developer from invading the exposed pixel electrode layer. This is because the intermediate electrode layer plays a buffering role to suppress the "battery effect". Referring now to FIG. 5, the reflective electrode layer 23, the intermediate electrode layer 25, and the transparent The electrode layer 27 is etched using the double-step photoresist pattern 31 to form the pixel electrodes 33, 35, and 37. Preferably, this etching is anisotropic dry etching. This is because dry etching can prevent the "battery effect" The anisotropic etching cleans the surroundings of the pattern 3 and avoids strong invasion. Referring to FIG. 6, the upper part of the two-step photoresist pattern 3 丨 is removed by a dust method to a fixed temperature for a predetermined time, in which an oxygen plasma acts on Substrate (Please read the Weeping Matter on the back first and fill out this one. 装 οο · ir 10- 526359 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. 5. Description of the invention (8 Γ: Two pairs, the resist pattern 31 This is - A kind of etchback method. If the photoresist is used as a low-thickness photoresist pattern formed in the transmission area of the pixel electrode, the photoresist is not ready. To form the reflective area of the photoresist pattern I, the single step is also solid, with the same thickness difference. The pre-resistance pattern 41 is formed with the upper step. Referring to FIG. 7 ', the reflective electrode layer 47 and the intermediate electrode layer 45 use the reflection that only covers the pixel electrode. The area photoresist pattern 41 is etched as an etch mask. Preferably, the intermediate electrode layer 45 is made of a pin. If compared with chromium, tungsten and molybdenum are more convenient for etching the aluminum reflective electrode layer 47 and the intermediate electrode layer 45. This is an anisotropic dry etch, but the etching time should be controlled to reduce the damage of the transparent electrode layer. Then, the reflective transmission type pixel electrode is completed, and the remaining photoresist pattern is removed. Fig. 8 shows a clear display of the tTFT-LCD in the state of Fig. 7, showing a side cross section taken along line 8 of I-1. The storage line 5 3 is shown in FIG. 8 and not shown in 7. The transmission area may be a window 51 formed in the middle of the reflection area, as shown in the figure. Alternatively, the transmission area occupies a part of the surroundings of the reflection area. In implementing the procedures of Figs. 4 to 7, it is preferable to expose the pad portion of the gate and the data interconnect. If the metal layer to be exposed to the top surface of the gasket part is made of metal containing aluminum, aluminum-containing metal will oxidize or corrode by humidity. Therefore, the spacer portion is mainly formed of a transparent electrode layer. The data pads 10 9 and the gate pads 101 are formed when the data interconnects and the gate interconnects are respectively distributed. The electrode insulation layer 13 and the induction insulation layer 21 are sequentially stacked on the gate pad 1. If the differential exposure display (refer to FIGS. 4 to 7) is implemented to the entire part in this state, the gasket portion can be processed into a localized electrical drawing, such as the transmission area of the pixel electrode. 11-This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) 526359 Λ 7 ____ Β7 V. Description of the invention (9) (Please read the precautions on the back before filling this page) Light area. In the stages of Figs. 4 and 5, a low-resistance photoresist pattern is formed on the cymbal portion. In addition, a pad pattern is formed, which is composed of three layers consisting of a reflective electrode layer, an intermediate electrode layer, and a transparent electrode layer. In the stage of FIG. 6, the photoresist pattern of the 'shim' is removed by etching. When the reflective electrode layer and the intermediate electrode layer are etched in the stage of FIG. 7, they are etched and removed from the pad pattern. As shown in FIG. 9, the side cross-sections taken along the lines Η—Η and ΠΙ-ΠΙ show only the pads 6 3 and 7 3, each of which is composed of a transparent electrode on the pad portion. Therefore, corrosion of the gasket portion in the subsequent steps can be prevented. If the insulating layer is used as an inductive insulating layer between the data interconnect and the pixel electrode, a method of locally etching the spacer may be implemented in the inductive insulating layer of the cloth-type gasket portion. When using the C 0 G (chip / glass) method, the connection ball is inserted between the spacer and the driver terminal. Press the ball to connect the gasket to the drive terminal. If there is no difference in thickness between the insulative insulation layer and the connection ball, the connection ball will be insufficiently squeezed without exposing the conductor. The surface of the induction insulating layer is embossed and the gasket part is removed by local etching. It is easy to connect the driver terminal to the gasket by fully pressing down the connection ball. [Effect of the invention] Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. Advantageously, the present invention can form a reflection transmission type TFT-LCD without additional processing steps. In addition, the present invention can also suppress the phenomena that hinder the method, such as the battery effect caused by the pixel electrode of the double-step layer ". _ ___- 12- This paper size is applicable to China National Standard (CNS) 8-4 (210X 297) Mm)