522459 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（\ ) 〔技術領域〕 本發明係有關製造例如半導體元件、液晶顯示元件、 電漿顯不兀件或薄膜磁頭等元件之微影製程所使用之曝光 裝置，特別是有關透過投影光學系統將光罩圖案轉印於基 板上之投影曝光裝置及其製造方法。 〔習知技術〕 在用於製造半導體元件之微影製程，使用整體曝光型( 靜止曝光型)或掃描曝光型之投影曝光裝置（例如，步進重 複(step and repeat)方式之投影曝光裝置，即所謂之步進器 (stepper*)，或步進掃描(step and scan)方式之投影曝光裝 置，即所謂之掃描步進器（scanning stepper))。投影曝 光裝置，具有投影光學系統，將作爲光罩之標線片的圖案 像投影在感光性基板（晶圓、玻璃基板）上，以來自光源 之曝光光照明於標線片，並且將通過投影光學系統之曝光 光曝光於基板上。 在投影曝光裝置，隨著在基板上所轉印圖案之微細化 ，因而要求高曝光精確度。因此，在投影曝光裝置，爲提 高其投影光學系統之解析度而將其數値孔徑增大，並且將 曝光光短波化。因此，投影光學系統因數値孔徑之增大而 大型化，並且相對於短波長之曝光光，而使用由高透射率 之矽材所形成之折射部件或反射部件等，因而造成其構成 之複雜化。 又，用以將標線片定位之標線片台及將晶圓作2度空 3 本 張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱) — — ^---------------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 522459 A7 _ B7 五、發明說明（7 間移動之晶圓台，係分別採用可進行高精確度之定位或高 精確度掃描之構成。又，習知之投影曝光裝置，係對既定 之框架機構安裝投影光學系統之後，藉由以該投影光學系 統作基準，而將標線片台系統、及晶圓台系統以既定之位 置關係組裝而製造。 進而，在使用紫外光作爲曝光光之情況，如眾所周知 ，紫外光係與存在於空氣中的微量有機物等起化學反應， 在構成投影光學系統之透鏡等表面產生遮蔽物質。若產生 該遮蔽物質，則會使投影光學系統之透射率降低。因此， 習知係使用化學過濾器等，自投影光學系統周圍之氣體將 有機物等不純物予以去除。 近來之投影曝光裝置，爲對應於半導體積體電路等之 微細化以提高解析度，曝光光由KrF準分子雷射（波長 248nm)移行至真空紫外域之ArF準分子雷射（波長 193nm)，進而，亦檢討使用F2雷射（波長I57nm)及 Kr2雷射（波長146nm)等更短波長之光作爲曝光光。 若使用波長爲200nm程度以下之真空紫外光（νυν 光）作爲曝光光，相較於遠紫外光等，其因空氣（尤其是 氧）之曝光光的吸收（衰減）會變更大。因此，在投影曝 光裝置內曝光光所通過之光程，較佳係供給相對於真空紫 外光爲高透射率，並且有機物及氧等不純物被除去後之高 純度氣體（purge gas:吹掃氣體），例如氮氣、氨氣等。又 ，在使用真空紫外域之曝光光之投影曝光裝置，使用相對 於曝光光爲高透射率之光學材料，例如合成石英及螢石（ 4 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------裝---------訂---- (請先閱讀背面之注意事項再填寫本頁) 華 522459 A7 B7 五、發明說明（>7 )522459 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of Invention (\) [Technical Field] The present invention relates to the manufacture of components such as semiconductor elements, liquid crystal display elements, plasma display elements, or thin-film magnetic heads. The exposure device used in the film production process, in particular, relates to a projection exposure device that transfers a mask pattern onto a substrate through a projection optical system and a manufacturing method thereof. [Known Technology] In the lithography process used to manufacture semiconductor devices, the overall exposure type (still exposure type) or scanning exposure type projection exposure device is used (for example, step and repeat projection exposure device, It is the so-called stepper *, or the projection exposure device of the step and scan method, the so-called scanning stepper. A projection exposure device has a projection optical system that projects a pattern image of a reticle as a photomask onto a photosensitive substrate (wafer, glass substrate), illuminates the reticle with exposure light from a light source, and passes the projection The exposure light of the optical system is exposed on the substrate. In the projection exposure apparatus, as the pattern transferred on the substrate is miniaturized, high exposure accuracy is required. Therefore, in a projection exposure apparatus, in order to increase the resolution of its projection optical system, its aperture is increased, and the exposure light is shortened. Therefore, the projection optical system is enlarged due to an increase in the number of apertures, and a refractive member or a reflective member formed of a high-transmittance silicon material is used for short-wavelength exposure light, which complicates its structure. . In addition, the reticle table for positioning the reticle and the wafers are spaced at 2 degrees. This scale is applicable to China National Standard (CNS) A4 specifications (210 X 297 public love) — — ^ ----- ----------- (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 522459 A7 _ B7 V. Invention Description (7 mobile wafer tables Is a structure that can perform high-precision positioning or high-precision scanning. Also, the conventional projection exposure device is a projection optical system installed on a predetermined frame mechanism, and then uses the projection optical system as a reference, and The reticle stage system and the wafer stage system are assembled in a predetermined positional relationship. Furthermore, in the case where ultraviolet light is used as the exposure light, as is well known, the ultraviolet light system chemically reacts with trace organic substances existing in the air. As a result, a shielding substance is generated on the surface of a lens or the like constituting the projection optical system. If the shielding substance is generated, the transmittance of the projection optical system is reduced. Therefore, it is customary to use a chemical filter or the like to automatically The gas removes impurities such as organic matter. Recently, in order to improve the resolution in order to improve the resolution of semiconductor integrated circuits, the projection exposure device moves the exposure light from KrF excimer laser (wavelength 248nm) to ArF in the vacuum ultraviolet region. Excimer laser (wavelength 193nm), and further review the use of shorter wavelength light such as F2 laser (wavelength I57nm) and Kr2 laser (wavelength 146nm) as exposure light. If vacuum ultraviolet light with a wavelength of less than 200nm is used (Νυν light) As exposure light, compared with far-ultraviolet light, the absorption (attenuation) of exposure light due to air (especially oxygen) changes greatly. Therefore, the light path through which exposure light passes in a projection exposure device It is preferable to supply a high-purity gas (purge gas), such as nitrogen or ammonia gas, which has a high transmittance with respect to vacuum ultraviolet light and removes impurities such as organic matter and oxygen. Also, vacuum ultraviolet light is used. The projection exposure device of the field exposure light uses optical materials with high transmittance relative to the exposure light, such as synthetic quartz and fluorite (4 paper sizes are applicable to China Home Standard (CNS) A4 Specification (210 X 297 mm) ------------ Install --------- Order ---- (Please read the precautions on the back first (Fill in this page) Hua 522459 A7 B7 V. Description of the invention (> 7)
CaF2)等，作爲投影光學系統之折射部件。 (請先閱讀背面之注意事項再填寫本頁) 但，即使使用相對於曝光光爲高透射率之光學材料及 吹掃氣體，仍無法避免投影光學系統之透射率之降低。例 如，若因殘存於吹掃氣體中的微量有機物等，而在構成投 影光學系統之光學部件產生遮蔽物質，則有投影光學系統 之透射率會降低而超過容許範圍之虞。此時，爲進行該遮 蔽物質所造成之光學部件的淸掃、交換、或再調整，而必 須將投影光學系統自投影曝光裝置拆下。進而，在進行投 影光學系統之再調整而需要時間的情況，爲防止投影曝光 裝置之運轉率降低，較佳係安裝與該投影光學系統之交換 、光學調整等完成後之另一投影光學系統於曝光本體部。 又，除投影光學系統之透射率降低之外，例如當因外部的 振動等而導致投影光學系統之既定像差超過容許範圍時， 必須將該投影光學系統自投影曝光裝置拆下而進行再調整 ，或是進一步與另一投影光學系統進行交換。 但，在習知之投影曝光裝置，在拆下投影光學系統之 前，必須將晶圓台等拆下，而且必須進行實質上爲投影曝 光裝置主要部分之分解作業。因此，不但投影光學系統之 經濟部智慧財產局員工消費合作社印製 拆下等作業非常複雜，而且其作業需較長的時間。進而， / 習知之投影曝光裝置，存在著許多以投影光學系統爲基準 而組裝之部件。因此，當將調整完成之投影光學系統組裝 於曝光裝置之本體部時，必須進行非常多的作業，結果， 不但提高維修成本，並且使投影曝光裝置再運轉之起動延 遲’即其運轉率降低之不適當。 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 522459 A7 B7 五、發明說明（欠） [發明槪要] (請先閱讀背面之注意事項再填寫本頁) 本發明之目的，係提供容易進行投影系統之拆下或交 換之投影曝光裝置。又，以提供投影系統容易調整之投影 曝光裝置爲目的。進而，以提供投影系統容易維修之投影 曝光裝置之製造方法爲目的。 依本發明之第1投影曝光裝置，其係透過投影系統， 而以曝光光束將物體曝光，包含：基座部件；及框架機構 ，以可滑動方式設於前述基座部件；並且，在前述框架機 構安裝前述投影系統。因此，藉由使該框架機構滑動，可 非常谷易進彳了該投影系統之拆下或交換等 又，依本發明之第2投影曝光裝置，其係透過投影系 統，而以曝光光束將物體曝光，包含：基座部件；框架機 構，安裝有前述投影系統，並且透過腳部而設於前述基座 部件上；及台系統，在前述基座部件上以前述腳部所包圍 之領域，至少配置有支持部，並且以可滑動方式將前述物 體往既定方向驅動。 經濟部智慧財產局員工消費合作社印制衣 在此第2投影曝光裝置，作爲第1方法’藉由使該台 系統往既定方向滑動而取出後，以支持該投影系統之狀態 使.該框架機構往該既定方向滑動，即可容易地將該投影系 統拆下。又，作爲第2方法，使該框架機構直接往與該既 定方向之逆方向滑動，亦可容易地將該投影系統拆下。又 ，例如在該框架機構上進行投影系統之再調整’或是在將 該投影系統與調整完成的另一投影系統交換之後’進行與 第1方法或第2方法相反之順序，可容易地將該框架機構 6 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 522459 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（4 ) ，即投影系統設置於曝光位置。 在此情況，以圖4所示爲例，該框架機構的腳部係實 質上配置於三角形各頂點的3個腳部（14A〜14C)，在此情 況，較佳係台系統的支持部(22A〜22C)之寬度D1，小於框 架機構的3個腳部之中相鄰接的既定2個腳部（14A、14B) 的間隔D1。在此構成，從該2個腳部（14A、14B)的方向滑 動台系統而將其拆下，可使用上述第1方法。 又，以圖5所示作爲另一例，該框架機構的腳部係實 質上配置於長方形各頂點的4個腳部（14A〜14D)，在此情 況，較佳係台系統的支持部（22A〜22D)之寬度，小於框架 機構的4個腳部之中相鄰接的既定2個腳部（14C、14D)的 間隔。在此構成，由於該台系統可往該2個腳部（14C、 MD)的方向滑動，將該框架機構往該逆方向（Bi)移動，可 使用上述第2方法。 又，較佳在該框架基更的腳部底面設置用以將被壓縮 之氣體噴出之氣墊。依此，該框架機構可在基座部件上圓 滑地滑動。 其次，本發明之投影曝光裝置之製造方法，其係透過 投.影系統，以曝光光束將物體曝光者，包含： 將支持前述投影系統之框架機構透過腳部而配置於基 座部件上之第1步驟；及在前述基座部件上被前述腳部所 包圍之領域配置台系統’以將可滑動之前述物體往既定方 向驅動之第2步驟。依此製造方法，可使本發明之投影曝 光裝置之效率提高。 7 尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ' -----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員Η消費合作社印製 522459 A7 _______ B7 五、發明說明（w) 在此情況，若將上述第1方法應用於該投影系統的交 換時’將該台系統沿該既定方向自該基座部件上運出後， 可將該框架機構在支持該投影系統的狀態下自該基座部件 上運出。 又’若將上述第2方法應用於該投影系統的交換時， 可將該框架機構在支持該投影系統的狀態下在該基座部件 上往與該既定方向之逆方向移動，而可將該框架機構自該 基座部件上運出。 - 如以上所述，其可實現容易進行投影系統（投影光學 系統）之拆下或交換等之投影曝光裝置。依此，不僅在投 影曝光裝置之製造工廠，在投影曝光裝置之納入處（元件 製造工廠等）之投影系統的交換可於短時間完成，降低投 影曝光裝置之製造成本，並可降低投影曝光裝置之運轉或 維修成本。進而，亦可獲得投影曝光裝置之運轉率，即在 元件製程之生產性的提昇。 .〔圖式之簡單說明〕 〔圖1〕係表示本發明之一實施形態之投影曝光裝置 之部分剖面之前視圖。 〔圖2〕係表示圖1之投影曝光裝置之側視圖。 〔圖3〕係表示在圖2之氣墊連接壓縮機狀態的要部 之一部份剖面之放大圖。 〔圖4〕係表示圖1的定盤之俯視圖。 〔圖5〕係應用於本發明之另一實施形態之投影曝光 本紙張尺度適用中國國家標準（CNS)A4規袼（21〇 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝--------訂i 經濟部智慧財產局員工消費合作社印製 522459 A7 B7 五、發明說明（，） 裝置，對應於圖4之定盤之俯視圖。 〔圖6〕係表示圖1之投影曝光裝置之組裝順序之一 例之流程圖。 〔圖7〕係表示圖1之投影曝光裝置之投影光學系統 的交換順序之一例之流程圖。 〔發明之較佳實施形態〕 以下，參照圖面說明本發明之實施形態之一例。本例 係在採用步進掃描(step and scan)方式或步進縫合(step and stitch)方式之掃描曝光方式的投影曝光裝置而應用本發明 〇 其次，作爲本例之投影曝光裝置之曝光光源（未圖示） ，雖使用ArF準分子雷射光源（波長193mn)，除此之外 ，亦可使用例如產生F2雷射光源（波長157nm)、Kr2雷 射光源（波長146nm)、釔鋁石榴石（YAG)雷射之高頻 波產生裝置、及半導體雷射之高頻波產生裝置等之真空紫 外光（本例爲波長200nm以下之光）之光源，或是使用產 生KrF準分子雷射光源（波長248nm)及前述高頻波產生 裝置等之遠紫外光之光源等。進而，亦可使用產生i線、g 線等之水銀燈作爲曝光光源。本發明係與曝光光源的種類 等無關’可應用於後述之必須進行投影光學系統交換之投 影曝光裝置。 如本例，在使用真空紫外光作爲曝光光束之情況，由 於真空紫外光會被存在於大氣中之氧、水蒸氣、碳化氫系 9 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 522459 A7 ----- B7__ 五、發明說明（各） 氣體（二氧化碳等）、有機物、及鹵素化合物等吸光物質 (不純物）所大量吸收，爲防止曝光光束的衰減，較佳係 在曝光光束的光程上，將這些吸光物質平均地抑制在 lOppm〜lOOppm程度以下。此處，在本例中，在該曝光光 束光程上之氣體，使其和曝光光束所透射之氣體（曝光光 束衰減較少之氣體），即氮或由氦、氖、氬、氪、氙、及 氡所構成之稀有氣體等相對於曝光光束爲高透射率且化學 性安定，並且吸光物質被高度除去之氣體（以下稱爲吹掃 氣體）相置換。氮氣及稀有氣體統稱爲惰性氣體。 又，該吸光物質(不純物)的濃度(或其容許値)可依存在 於光程上之吸光物質的種類而異，例如將會產生遮蔽物質 之有機系之吸光物質濃度以最嚴格管理在1〜lOppm程度以 下，接著可將水蒸氣、及其他物質依序緩和其濃度。又， 亦可在後述之照明光學系統內之光程、投影光學系統內之 光程、標線片室、晶圓式、及搭載系統內部等之一部份， 管理吸光物質的濃度(或其容許値)使其與其他部分相異。 又，氮氣即使可在真空紫外域波長150nm程度爲止作 爲曝光光束透射之氣體（吹掃氣體）而使用，但，相對於波 愚爲150nm程度以下之光，大致作爲吸光物質而作用。此 處，作爲相對於波長爲150nm程度以下之曝光光束之吹掃 氣體，較佳係使用稀有氣體。又，在稀有氣體中，就折射 率的安定性及高熱傳導率等觀點而言，較佳爲氦氣。但， 由於氨氣較昂貴，在重視運轉成本等情況亦可使用其他稀 有氣體。又，作爲吹掃氣體，不僅可供給單一種類氣體， 10 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） " -----------—I----訂--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 522459 A7 B7 五、發明說明（\) 亦可供給混合氣體，例如將氮與氦按既定比例而混合之氣 體。 在本例，由於重視折射率的安定性(成像特性的安定性 )及高熱傳導率（高冷卻效果）等，因此使用氦氣作爲該吹掃 氣體。因此，例如在設有本例之投影曝光裝置之床的階下 之機械室設置氣體供給裝置（未圖示），對投影曝光裝置及 其附屬的裝置內之複數氣密室以略大於大氣壓之高氣壓（陽 壓)供給高純度的吹掃氣體，並依需要蔣送至各氣密室之氣 體予以回收而再利用。 _ 以下，詳細說明本例之投影曝光裝置之構成。圖1係 表示本例之投影曝光裝置之部分剖面之前視圖，圖2係表 示該投影曝光裝置之側視圖。 在圖1，在作爲氣密室之副室9內，收容有由照明度 分布均一化用之光學積分器、用以切換照明條件之可變開 口光圈（σ光圈）、中繼透鏡、視場光圏、聚光透鏡等所構 成之照明光學系統，由未圖示之曝光光源所射出作爲曝光 •光束之波長193nm之脈衝光，即曝光光（曝光用之照明光 )IL，透過副室9內之照明光學系統，而照射於被限定於作 焉光罩之標線片R1(或R2)上的槽狀之照明領域。該照明領 域，舉例言之，係在投影光學系統PL之圓形視場內大致 以其光軸AX爲中心，在掃描曝光時，相對於該照明領域 ，限定爲與標線片相對移動之掃描方向正交之非掃描方向 〇 照射於標線片R1(或R2)上的曝光光IL，係射入作爲 11 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------------^--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 522459 A7 B7 五、發明說明（V〇) 投影系統之投影光學系統PL。進而，通過該投影光學系統 PL之曝光光IL，係照射於作爲感光基板（被曝光基板） 之塗布有光阻之晶圓W1 (或W2)上所限定的槽狀之曝光 領域（關於投影光學系統PL，係與照明領域形成共軛之領 域）。即，在照明領域內之形成於標線片R1(或R2)的圖案 一部份之像，係藉由投影光學系統PL以投影倍率/3 (冷 爲1/4或1/5等）而投影於該曝光領域。 又，將投影倍率/5作爲速度比，ft標線片R1及晶圓 W1往既定的掃描方向同步移動，即，使標線片R1相對於 照明領域相對移動，與此同步而使晶圓W1相對於曝光領 域相對移動。藉此同步移動，在標線片R1上圖案所形成 之領域全面被曝光光IL所照明，並且，在該圖案所應轉印 之晶圓W1上的既定領域（攝影領域）被曝光光IL所掃描 曝光，因此標線片R1之圖案像被轉印於晶圓W1上的一個 攝影領域。此處，可將標線片Rl、R2視爲第1物體，及 將晶圓Wl、W2視爲第2物體，晶圓Wl、W2係對應於本 發明之曝光對象之物體。晶圓Wl、W2，例如係半導體（ 石夕等）或SOI ( silicon on insulator)等之直徑爲200mm或 3?0mm等圓板狀的基板。 作爲投影光學系統PL，例如，國際公開第 WOOO/39623號及所對應之美國專利申請第644645號（申 請曰爲2000年8月24日）所揭示般，可使用直筒型之反 射折射系統（由配置有沿1個光軸之複數個折射透鏡、及在 各光軸附近具有開口之2個凹面鏡所構成），或使用直筒型 12 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I I I I I I I I I I - — — — — III «ΙΙΙΙΙΙΙ — (請先閱讀背面之注意事項再填寫本頁) 522459 A7 _ B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（八） 之折射系統（沿1個光軸配置折射透鏡所構成）等。進而 ’亦可使用雙筒型之反射折射系統等作爲投影光學系統PL 。作爲投影光學系統PL中之折射構件之玻璃材，可使用 合成石英、摻雜既定不純物（氟等）之石英玻璃、或螢石 等。 以下，與投影光學系統PL之光軸AX平行取Z軸， 在垂直於Z軸的平面(在本例大致與水平面一致）內，在掃 描曝光時沿標線片R1及晶圓W1所移動之掃描方向(即， 平行於圖1的紙面之方向)取Y軸，沿與此掃描方向正交之 非掃描方向（即，垂直於圖1的紙面之方向)取X軸而加以 說明。 此處，說明曝光本體部全體之構成，包含：支持本例 的標線片Rl、R2之台系統、投影光學系統PL、及支持晶 圓Wl、W2之台系統。又，將高剛性且厚的平板狀的定盤 2設置於床上。該定盤2之俯視圖如圖4所示，定盤2之 形狀大致呈三角形。 回到圖1、圖2，在定盤2上大致呈正三角形的頂點位 置設置3個（4個亦可)柱體3A、3B、3C，在柱體3A〜3C上 _過防振台4A〜4C，設置高剛性的三角形平板狀且在其中 央部形成有曝光光IL所通過的開口之支持板5。防振台 4A〜4C係能動型防振裝置，分別包含有機械式阻尼器(空氣 阻尼器或油壓式阻尼器等耐大重量者）、及電磁式阻尼器（ 由音圈馬達等之致動器所構成）。在本例，由柱體3A〜3C、 防振台4A〜4C、及支持板5而構成第1框架機構6。 13 (請先閱讀背面之注意事項再填寫本頁) 裝 ----訂---- ^91. 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 522459 A7 __ ______ B7 五、發明說明) 在支持板5上面形成平面度極佳的導引面，在該導引 面上透過空氣軸承以圓滑地二度空間滑動自如方式載置標 線片台10，在標線片台10上，透過真空吸附等將標線片 Rl、R2保持，俾使其沿掃描方向（Υ方向）鄰接。因此， 本例之標線片台10係雙固定器方式，例如，雖可有效率地 進行雙重曝光等，但亦可在各標線片使用可動台之雙台方 式。又，標線片台10亦可使用僅保持1枚標線片之單台方 式。 . 標線片台10，例如，係由保持標線片Rl、R2之微動 台、及將其包圍之框狀的粗勸台所構成。該粗動台係藉由 未圖示之線性馬達沿Υ方向（掃描方向）驅動，而該微動 台係例如藉由3個致動器將其相對於粗動台沿X方向、γ 方向、旋轉方向微小驅動，藉此，使標線片Rl、R2沿+Υ 方向或-Υ方向以所欲之掃描速度且高精確度地驅動，並可 補正標線片R1與晶圓W1之同步誤差。又，標線片台10 ，係使用未圖示之移動部件（counter mass:反向塊等）， 相對於Y方向使其滿足運動量保存則而驅動，俾掃描曝光 時幾乎不會產生振動而構成。 ,又，配置由雷射干涉計所構成之標線片干涉計11，用 以計測標線片台10之X方向和Y方向的位置資訊、及X 軸、Y軸和Z軸周圍之旋轉角。在本例，由標線片台10、 該驅動裝置（未圖示）、及標線片干涉計11而構成標線片 台系統RST，標線片台系統RST被高氣密性箱狀之標線片 室（第1台室）12所覆蓋，在標線片室12的上板之中央 14 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) --------訂---- 經濟部智慧財產局員工消費合作社印製 522459 A7 B7 五、發明說明（\71 ) 部形成使曝光光IL通過之窗部。 本例之標線片干渉計11，雖以固定於標線片室12之 未圖示之參照鏡爲基準而計測標線片台10之位置，此夕^， 亦可以設於投影光學系統PL之參照鏡爲基準而計測標線 片台10之位置。 在支持板5上，於包圍標線片室12之大致呈三角形頂 點的位置設置3個柱體7A、7B、7C，在柱體7A〜7C上設 置形成有使曝光光IL通過的開口之支持板8，在支持板8 及支持板5上設置用以收納照明光學系統的至少一部份之 副室9。進而，在支持板5上，沿-Y方向於鄰接於標線片 室I2之領域，爲進行標線片台10上之標線片Rl、R2的 交換而設置標線片搭載系統RRD。標線片搭載系統rrd， 例如係用以將往線的交換機構收納於具有某種程度的氣密 性之盒體內者。又，標線片搭載系統RRD，亦可設置在有 別於第1框架機構之另一框架機構。 其次，在圖1、圖2，於定盤2上被3個柱體3A〜3C 所大致包圍的領域上，在三角形頂點的位置載置3個圓板 狀的氣墊13A、13B、13C使其可沿X方向及Y方向滑動 ，.在氣墊13A〜13C上固定柱體14A〜14C，而在柱體 14A〜14C上透過與防振台4A〜4C同樣構成的能動型防振台 15A〜15C，設置高剛性的三角形平板狀的支持板16。由該 支持板16的+X方向（圖1的正前方）的端部至中央部爲 止所形成的U字型缺口部16a，透過凸緣部而載置投影光 學系統PL，在該缺口部16a的開放端係透過以螺栓固定平 15 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) --------訂---- 經濟部智慧財產局員工消費合作'社印製 522459 A7 B7 五、發明說明（VX) 板狀的連結部件18而將其封閉。即，投影光學系統PL係 被支持成相對於支持部16可沿+X方向進出。 (請先閱讀背面之注意事項再填寫本頁) 在本例，由氣墊13A〜13C、柱體14A〜14C、防振台 15A〜15C、及支持板16而構成第2框架機構17，該第2 框架機構17係對應於本發明之框架機構。在本例，藉由氣 墊13A〜13C，可使第2框架機構17在定盤2上圓滑地滑 動。 圖3係表示圖1中的氣墊13B的構成之放大截面圖。 ‘在圖3，於氣墊13B的底面，即與定盤2之接觸面形成用 以噴出被壓縮的高壓氣體之噴出口 13Ba、13Bb。又，在使 柱體14B移動之場合，在氣墊13B透過配管36而連接用 以供給高壓空氣之壓縮機37，並由噴出口 13Ba、13Bb噴 出高壓空氣。在其他的氣墊13A、13C同樣亦藉由噴出高 壓空氣，而可使在定盤2上的第2框架機構17圓滑地移動 〇 經濟部智慧財產局員工消費合作社印製 再回到圖1、圖2，在被定盤2上的第2框架機構17 所大致包圍之領域，即第2框架機構17之以3個柱體 14A〜14C所大致包圍之領域，在大致呈三角形頂點的位置 稱置3個氣墊21A、21B、21C。進而，在氣墊21A、21B 、21C上，透過與防振台15A〜15C同樣之能動型防振台 22A、22B、22C而設置作爲大致呈四角形箱狀的氣密室之 晶圓室23 (第2台室），在晶圓室23內部收納晶圓台系 統WST。因此，藉由氣墊21A〜21C所噴出之高壓空氣， 可以小力圓滑地移動定盤2上之晶圓室23。在本例，此種 16 本張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ' 522459 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（) 由氣墊噴出高壓空氣而移動既定機構的方式稱之爲「氣墊 滑動方式」。 又，在晶圓室23底面之中央部固定晶圓基座24，在 晶圓基座24的上面係被加工成平面度極佳之導引面。在該 導引面，第1晶圓台25A及第2晶圓台25B係分別透過空 氣軸承圓滑且沿X軸導引部件27及Y軸導引部件26而滑 動自如地載置於X方向、Y方向。又，在晶圓台25A及 25B上，分別透過真空吸附等而保持第1晶圓W1’及第2 晶圓W2。晶圓台25A、25B，例如係藉由線性馬達而沿γ 方向連續移動，並且沿X方向及Y方向步進移動。此時， 晶圓台25A、25B，分別透過X軸導引部件27及Y軸導引 部件26之逆方向移動，而相對於X方向、Y方向驅動以 滿足運動量保存則，並且當步進移動及掃描曝光時幾乎不 會產生振動而構成。 又，在晶圓台25A、25B內之Z測平機構（試料台） ，爲了進行測平及聚焦，因此構成可沿晶圓Wl、W2的Z •方向之變位及2軸周圍（即，X軸及Y軸之周圍）之傾斜 。如此，在本例之晶圓台係雙晶圓台（double wafer stage ),.方式。又，設置由雷射干涉計所構成之晶圓干涉計28使 其與晶圓台25A、25B側面之移動鏡（鏡面）相對面，並 藉由晶圓干涉計28，以晶圓室23內之參照鏡（未圖示） 爲基準，計側晶圓台25A、25B之X方向、Y方向的位置 及X軸、Y軸、Z軸周圍之旋轉角。又，晶圓干涉計28， 亦可以固定於投影光學系統PL之參照鏡爲基準，進行晶 17 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐Υ- ' " ------------------丨訂--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 522459 A7 B7 五、發明說明（χ>) 圓台25A、25B之位置計側。 在本例，由晶圓台25A、25B、該驅動裝置（X軸導 引部件27、Y軸導引部件26等）、及晶圓干涉計28而構 成晶圓台系統WST，而在收納有晶圓台系統WST之晶圓 室23的上板之中央部形成使曝光光IL通過之開口。又， 設置用以進行晶圓台25A、25B上之晶圓Wl、W2的交換 之晶圓搭載系統WRD，使其鄰接於定盤2上的晶圓室23 之-Y方向側面。晶圓搭載系統WRD、例如係將交換機構 收納於具有某程度之氣密性之盒體內者。進而，雖未圖示 ，在晶圓室23配置晶圓對準用之對準感測器，而在標線片 室12配置標線片對準用之對準顯微鏡。 又，在圖1，沿第2框架機構17之支持板16的+Y方 向之端部固定Y軸之干涉計單元31A，來自該千涉計單元 31A之計測光束係照射於投影光學系統PL的Y軸之參照 鏡35A、及晶圓室23的Y軸之移動鏡34A。進而，沿第1 框架機構6之支持板5之+Y方向的端部，固定用以傳送計 測光束之補助單元32A，來自干涉計單元3 1A之計測光束 透過補助單元32A而照射於標線片室12的Y軸之移動鏡 33.A。干涉計單元31A以投影光學系統PL (參照鏡35A) 爲基準，計測標線片室12及晶圓室23之Y方向的位置、 以及Z軸周圍之旋轉角。 同樣地，在圖2，沿支持板5及16之-X方向的端部 分別固定補助單元32B、及干涉計單元31B。來自該干涉 計單元31B之計測光束係分別照射於投影光學系統PL的 18 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------------^--------- (請先閱讀背面之注意事項再填寫本頁) 522459 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（八） X軸之參照鏡35B、及晶圓室23的X軸之移動鏡34B。進 而，來自該干涉計單元31B之計測光束透過補助單元32B 而照射於標線片室12的X軸之移動鏡33B。干渉計單元 31B以投影光學系統PL (參照鏡35B)爲基準，計測標線 片室12及晶圓室23之X方向的位置、以及Z軸周圍之旋 轉角。 在本例，藉由相對於以標線片干涉計11所測得標線片 室12之標線片台10之位置資成、及相對於以晶圓干涉計 28所測得之晶圓室23之晶圓台25A、25B之位置資訊， 而以干涉計單元31A、31B所測得之投影光學系統PL爲基 準之標線片室12及晶圓室23之位置資訊加以補正，因此 ，可以投影光學系統PL爲基準，而高精確度地計測標線 片台10 (標線片Rl、R2)及晶圓台25A、25B (晶圓W1 、W2)之位置資訊。又，根據該計測結果而控制標線片台 10及晶圓台25A、25B之移動，可進行高精確度之掃描曝 光。 依此，當將標線片R1、R2之圖案像曝光於晶圓W1、 W2上時，可獲得高曝光精確度（對準精確度、轉印可靠 度）。又，本例之晶圓台系統WST係雙晶圓台方式，例如 在載置於第1晶圓台25A之晶圓W1之掃描曝光中，由於 可進行與載置於第1晶圓台25B之晶圓W2之交換及對準 ，因此可獲得高產能。 又，在圖1、圖2，在固定於第1框架機構6之補助單 元32A、32B，分別固定掃描雷射光束方式之邊緣感測器 19 (請先閱讀背面之注意事項再填寫本頁) 裝 訂----- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 522459 經濟部智慧財產局員Η消費合作社印製 A7 B7 五、發明說明（d) 39A、39B。邊緣感測器39A、39B，係分別以第i框架機 構6 (支持板5)爲基準，而可檢出投影光學系統PL之X 方向的位置XPL及Y方向的位置Ypl。又，可取代投影光 學系統PL之位置檢出用之邊緣感測器39A、39B，而使用 更高精確度之雷射干涉計等其他方式之位置檢出裝置。 其次，在本例之投影曝光裝置，使用真空紫外光作爲 曝光光IL。此處，爲藉由提高曝光光IL之透射率，即提 高晶圓Wl、W2上之曝光光IL的照明度以獲得高產能， 在本例係在曝光光IL的光程供給高透射率的氣體（本例係 使用氦氣）。即，在圖1，來自未圖示之氣體供給裝置之 高純度吹掃氣體，透過未圖示之配管而分別供給至副室9 、標線片室12、投影光學系統PL、及晶圓室23。又，在 副室9、標線片室12、投影光學系統PL、及晶圓室23之 內部的氣體（吹掃氣體），可依需要而透過未圖示之配管 而回收至該氣體供給裝置，並透過例如化學過濾器除去不 純物而再使用。 進而，在本例，在副室9與標線片室12間之空間、標 線片室12與投影光學系統PL間之空間、及晶圓室23與 晶.圓搭載系統WRD間之空間，藉由具有大可撓性且氣體 遮斷性高的薄膜狀軟性遮蔽部件29A、29B、29C、29D加 以密閉，使其分別與外氣隔離。又，本例之軟性遮蔽部件 29A〜29D係將軟性之片材予以加工成圓筒的波紋狀，其兩 端部係透過例如陶瓷製之凸緣部，而以螺栓等分別固定於 所對應之部件。軟性遮蔽部件29A亦稱爲被覆部件。又， 20 本$張尺度適用中國國家標準(CNS)A4規格（210 X 297公釐） _ (請先閱讀背面之注意事項再填寫本頁) --------訂---- 經濟部智慧財產局員工消費合作社印製 522459 A7 B7 五、發明說明（v\) 在標線片室12與晶圓搭載系統WRD間之空間亦以軟性部 件加以密閉。又，軟性遮蔽部件29A〜29D未必成爲波紋狀 ，例如以原來之平面狀而使其形成圓筒狀亦可。 依此，自照明光學系統至作爲被曝光基板之晶圓W1 、W2爲止之曝光光IL的光程幾乎完全被密封。因此，在 曝光光IL的光程上幾乎無來自外部含吸光物質的氣體之混 入，而可抑制曝光光之衰減。進而，藉由使用軟性遮蔽部 件29A〜29D，例如在標線片室12、及晶圓室23內部所產 生之振動不會傳導至投影光學系統PL，因此可降低振動之 相互影響。又，在配置於曝光光源與照明光學系統之間， 並且包含有用以調整曝光光和照明光學系統的光軸兩者的 光學上的位置關係之光束匹配單元(bearn matching unit)之 傳送光學系統（未圖示）內之光程，亦被前述之吹掃氣體充 滿，因此可抑制在傳送光學系統之曝光光的衰減。 進而，在本例之投影曝光裝置組裝時，軟性遮蔽部件 29A等係僅以螺栓等安裝其凸緣部，因此可以極短時間且 ，容易地安裝。進而，例如爲進行投影光學系統PI^之交換 而將晶圓室23及框架機構17移動時，軟性遮蔽部件29B 等係僅將凸緣部之螺栓等卸下，即可非常容易地將其拆下 。又，例如爲進行投影光學系統PL之交換而將晶圓室23 及框架機構17移動時，爲能容易拆下吹掃氣體供給用配管 及配線等之連結部，而將該配管及配線等之連結部設置成 谷易拆裝之連結構造。 其次，參照圖4，說明用以支持本例之投影曝光裝置 本紙張尺度適用中國國家標準（CNS)A4蜗^格（210 X 297公爱） (請先閱讀背面之注意事項再填寫本頁) 裝 ----訂---- 經濟部智慧財產局員工消費合作社印製 522459 A7 _ _ B7 五、發明說明（γ°) 之投影光學系統PL之第2框架機構與用以收納晶圓台系 統WST之晶圓室23兩者之關係。 圖4係表示圖1中的定盤2之俯視圖。在圖4，於大 致呈三角形平板之定盤上，圖1所示之第1框架機構6之 3個柱體3A〜3C係固定於大致呈正三角形頂點的位置。在 此3個柱體3A〜3C內側，大致呈正三角形頂點的位置，以 可滑動方式載置第2框架機構17 —部份之3個柱體 MA〜MC (對應於本發明之「腳部」乂。進而，在3個柱 體3A〜3C內側，大致呈正三角形頂點的位置，以可滑動方 式載置用以支持晶圓室23 (晶圓台系統WST)之3個防振 台22A〜22C (對應於本發明之「支持部」）。又，在第2 框架機構Π —部份之支持板16，支持投影光學系統PL。 在此場合，在柱體14A〜14C中的2個柱體MA、MB的γ 方向之間隔D2，係設定成比防振台22A〜22C的Y方向之 最大間隔D1更寬。即，形成下式： D2> D1 ...(1) 依此，本例之晶圓室23，係通過第2框架機構17之 柱體14A〜14C之間，而可由箭頭A1所示之+X方向（裝置 前面側）拉出。其後，搭載有投影光學系統PL之第2框 架機構Π，可沿箭頭A2所示之+X方向拉出。 其次，參照圖6之流程圖，說明本例之投影曝光裝置 製造時之組裝順序之一例。 在圖6之步驟1〇1，係將圖1中之定盤2設置於例如 半導體製造工廠之無塵室內的床上’並於定盤2上組裝圖 22 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ----I--------------訂--------- (請先閱讀背面之注意事項再填寫本頁) 522459 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（Λ ) 1之第1框架機構。在此作業之前，預先在步驟Π1，進行 圖1之第2框架機構17之組裝，並且在第2框架機構17 之支持板16之缺口部16a搭載光學特性調整完成之投影光 學系統PL。其次，在步驟102，於定盤2上載置支持有投 影光學系統PL之第2框架機構17。此時，將壓縮機連接 於氣墊13A〜13C，於定盤2上，以氣體滑動方式圓滑地滑 動第2框架機構17。 與至此爲止之作業並行，在步驟、12，事先進行晶圓 台系統WST及晶圓室23之組裝調整。其次，在步驟103 ，在定盤2上之第2框架機構17之柱體14A〜14C之間（ 內側領域），透過氣墊21A〜21C、及防振台22A〜22C而設 置晶圓室23，並將晶圓搭載系統WRD連結於晶圓室23。 此時，於定盤2上，以氣體滑動方式圓滑地滑動晶圓室23 。其次，在步驟104，在第1框架機構6上，組裝收納有 標線片台系統RST、標線片室12、及照明光學系統等之副 室9、及標線片搭載系統RRD等。此時，照明光學系統係 連接於與曝光光源連接之前述傳送光學系統（未圖示）。 又，在本例，雖係將照明光學系統整體收納於副室9 內.，亦可僅將照明光學系統的一部份收納於副室9，剩餘 部份則收納在有別於副室9之另一副室內。作爲照明光學 系統之一例，在照明光學系統內，配置成與標線片的圖案 面實質上共軛，並且比在掃描曝光時與標線片及晶圓的移 動同步驅動的視場光圈（標線片擋板或蔭罩板）更靠近擦 線片側部份，係被收納於副室9內，剩餘部份（含該視_ 23 -------------------訂--------- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格C210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 522459 A7 ----- B7 五、發明說明（yv) 光圈）則收納於另一副室內。該另一副室，較佳係例如以 有別於第1框架機構6之另一框架機構加以支持。進而， 該另一框架機構，例如可於定盤2上相對於第1框架機構 6，而配置沿與第2框架機構17及晶圓室23被拉出之+X 方向相反的方向（-X方向）。又，該另一框架機構，例如 可先於定盤2上之第1框架機構6而加以組裝或並行組裝 〇 其後，在步驟105，藉由進行機械的、電氣的、及光 學的整體調整，配置吹掃氣體供給機構，在組裝軟性遮蔽 部件29A〜29D後，進行吹掃氣體供給機構之調整，而完成 本例之模組方式（或盒體方式）之投影曝光裝置。在此狀 態，藉由圖1、圖2之邊緣感測器39A、39B，檢出相對於 第1框架機構6之投影光學系統PL之X方向的位置XPL、 及Y方向的位置YPL，並將該檢出結果儲存於未圖示之主 控制系統的記憶部。 其後，在使用圖1之投影曝光裝置進行長時間曝光之 過程，例如，在構成投影光學系統PL之光學元件（透鏡 等）附著遮蔽物質，而使投影光學系統PL之透射率低於 两定的容許値之場合，或既定之像差超過容許範圍而惡化 之場合，爲了進行投影光學系統PL之再調整，因此實施 如圖7所示般之投影光學系統PL之交換順序。CaF2), etc., as the refractive component of the projection optical system. (Please read the precautions on the back before filling this page.) However, even if an optical material and a purge gas with high transmittance relative to the exposure light are used, the transmittance of the projection optical system cannot be reduced. For example, if a small amount of organic matter remains in the purge gas and the like, and a shielding substance is generated in the optical components constituting the projection optical system, the transmittance of the projection optical system may decrease and exceed the allowable range. At this time, in order to sweep, exchange, or readjust the optical components caused by the shielding material, the projection optical system must be removed from the projection exposure device. Furthermore, in the case where it takes time to readjust the projection optical system, in order to prevent the operating rate of the projection exposure device from decreasing, it is preferable to install another projection optical system after the exchange with the projection optical system and optical adjustment are completed. Expose the body. In addition, in addition to the decrease in the transmittance of the projection optical system, for example, when the predetermined aberration of the projection optical system exceeds the allowable range due to external vibrations, the projection optical system must be removed from the projection exposure device and readjusted. , Or further exchange with another projection optical system. However, in the conventional projection exposure device, before removing the projection optical system, it is necessary to remove the wafer stage and the like, and it is necessary to perform a disassembling operation which is a substantial part of the projection exposure device. Therefore, not only the printing and dismantling of employees' cooperatives of the Intellectual Property Bureau of the Ministry of Economics of the projection optical system is very complicated, but the operation takes a long time. Furthermore, there are many known projection exposure apparatuses that are assembled with reference to a projection optical system. Therefore, when the adjusted projection optical system is assembled in the main body of the exposure device, a lot of work must be performed. As a result, not only the maintenance cost is increased, but the start-up delay of the re-operation of the projection exposure device is reduced, that is, its operation rate is reduced. Not appropriate. 5 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 522459 A7 B7 V. Description of the invention (owed) [Inventory summary] (Please read the notes on the back before filling this page) The present invention The purpose is to provide a projection exposure device that is easy to remove or exchange the projection system. It is also an object of the invention to provide a projection exposure device which is easy to adjust the projection system. It is also an object of the present invention to provide a method for manufacturing a projection exposure device that is easy to maintain the projection system. According to a first projection exposure apparatus of the present invention, an object is exposed by an exposure light beam through a projection system, and includes: a base member; and a frame mechanism provided on the base member in a slidable manner; and The mechanism installs the aforementioned projection system. Therefore, by sliding the frame mechanism, it is possible to easily remove or exchange the projection system. According to the second projection exposure device of the present invention, the object is exposed through the projection system with an exposure beam. Including: a base member; a frame mechanism on which the aforementioned projection system is mounted and provided on the base member through a foot portion; and a table system, at least an area surrounded by the foot portion on the base member is provided with The support part slidably drives the aforementioned object in a predetermined direction. Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs print clothing for the cooperative. Here, the second projection exposure device is used as the first method ’by sliding the system in a predetermined direction and removing it to support the state of the projection system. The frame mechanism can be easily removed by sliding the frame mechanism in the predetermined direction. As a second method, the projection mechanism can be easily removed by sliding the frame mechanism directly in the direction opposite to the predetermined direction. In addition, for example, if the projection system is readjusted on the frame mechanism, or after the projection system is exchanged with another projection system that has been adjusted, the reverse order of the first method or the second method can be easily performed. The frame mechanism 6 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 522459 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (4), that is, the projection system is set at exposure position. In this case, taking the example shown in FIG. 4 as an example, the legs of the frame mechanism are substantially arranged at the three legs (14A to 14C) of each vertex of the triangle. In this case, it is preferable to support the system ( The width D1 of 22A to 22C) is smaller than the interval D1 of the predetermined two leg portions (14A, 14B) adjacent to each other among the three leg portions of the frame mechanism. In this configuration, the table system can be removed by sliding the table system from the directions of the two legs (14A, 14B), and the first method can be used. In addition, as shown in FIG. 5, as another example, the leg portion of the frame mechanism is substantially arranged at four leg portions (14A to 14D) at each vertex of the rectangle. In this case, it is preferable to support the system portion (22A) ~ 22D), which is smaller than the interval between the two predetermined legs (14C, 14D) adjacent to each other among the four legs of the frame mechanism. In this configuration, since the system can slide in the direction of the two legs (14C, MD) and move the frame mechanism in the reverse direction (Bi), the second method described above can be used. In addition, it is preferable that an air cushion for ejecting the compressed gas is provided on the bottom surface of the leg of the frame base. Accordingly, the frame mechanism can smoothly slide on the base member. Secondly, the manufacturing method of the projection exposure device of the present invention is through casting. A shadow system for exposing an object with an exposure beam includes: a first step of arranging a frame mechanism supporting the aforementioned projection system on a base member through a foot; and a step on the base member surrounded by the foot The second step of the field configuration table system is to drive the aforementioned slidable object in a predetermined direction. According to this manufacturing method, the efficiency of the projection exposure device of the present invention can be improved. 7 scales are applicable to China National Standard (CNS) A4 (210 X 297 mm) '----------- installation -------- order --------- ( Please read the notes on the back before filling this page) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 522459 A7 _______ B7 V. Description of the invention (w) In this case, if the first method mentioned above is applied to the exchange of the projection system When the system is carried out of the base member in the predetermined direction, the frame mechanism may be carried out of the base member while supporting the projection system. If the second method is applied to the exchange of the projection system, the frame mechanism can be moved on the base member in a direction opposite to the predetermined direction while the projection system is supported, and the frame mechanism can be moved. The frame mechanism is carried out from the base member. -As described above, it is possible to realize a projection exposure device that allows easy removal and replacement of the projection system (projection optical system). According to this, the exchange of the projection system not only in the manufacturing factory of the projection exposure device but also in the place where the projection exposure device is incorporated (component manufacturing factory, etc.) can be completed in a short time, reducing the manufacturing cost of the projection exposure device, and reducing the projection exposure device. Operating or maintenance costs. Furthermore, the operating rate of the projection exposure device can be obtained, that is, the productivity of the component manufacturing process can be improved. . [Brief Description of the Drawings] [Figure 1] is a partial front view showing a projection exposure apparatus according to an embodiment of the present invention. [Fig. 2] A side view showing the projection exposure apparatus of Fig. 1. [Fig. [Fig. 3] It is an enlarged view of a part of a section showing a state where the compressor is connected to the air cushion in Fig. 2. [Fig. [Fig. 4] A plan view showing the fixing plate of Fig. 1. [Fig. [Figure 5] This is a projection exposure applied to another embodiment of the present invention. The paper size is applicable to the Chinese National Standard (CNS) A4 Regulation (21 × 297 mm). (Please read the precautions on the back before filling in this page. ) Equipment -------- Order i Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 522459 A7 B7 V. Description of the invention (,) The device corresponds to the top view of the fixed plate in Figure 4. [Fig. 6] Fig. 6 is a flowchart showing an example of an assembling procedure of the projection exposure apparatus of Fig. 1. [Fig. [Fig. 7] Fig. 7 is a flowchart showing an example of the exchange procedure of the projection optical system of the projection exposure apparatus of Fig. 1. [Fig. [Preferred Embodiment of the Invention] An example of an embodiment of the present invention will be described below with reference to the drawings. This example applies the invention to a projection exposure device using a scan exposure method using a step and scan method or a step and stitch method. Secondly, as the exposure light source of the projection exposure device of this example ( (Not shown), although ArF excimer laser light source (wavelength 193mn) is used, in addition, F2 laser light source (wavelength 157nm), Kr2 laser light source (wavelength 146nm), yttrium aluminum garnet can also be used (YAG) A source of vacuum ultraviolet light (light in this example below 200nm) for laser high-frequency wave generators and semiconductor laser high-frequency wave generators, or a KrF excimer laser light source (wavelength 248nm) And a source of far-ultraviolet light such as the aforementioned high-frequency wave generating device. Furthermore, a mercury lamp that generates i-line, g-line, or the like may be used as the exposure light source. The present invention is applicable regardless of the type of exposure light source, and the like, and can be applied to a projection exposure apparatus that requires a projection optical system exchange as described later. As in this example, in the case of using vacuum ultraviolet light as the exposure beam, the vacuum ultraviolet light will be in the atmosphere of oxygen, water vapor, and hydrocarbon systems. 9 This paper size applies Chinese National Standard (CNS) A4 specifications (210 X 297mm) ----------- Installation -------- Order --------- (Please read the precautions on the back before filling this page) Ministry of Economy Wisdom Printed by the Consumer Cooperative of the Property Bureau 522459 A7 ----- B7__ V. Description of the Invention (Each) Absorbed by light-absorbing substances (impurities) such as gases (carbon dioxide, etc.), organic substances, and halogen compounds, in order to prevent attenuation of the exposure beam, It is preferable that these light-absorbing substances are suppressed on the optical path of the exposure beam to an average of 10 ppm to 100 ppm or less. Here, in this example, the gas on the optical path of the exposure beam is the gas transmitted by the exposure beam (the gas with less attenuation of the exposure beam), that is, nitrogen or helium, neon, argon, krypton, xenon The rare gases, such as, and 氡, have high transmittance and chemical stability with respect to the exposure beam, and the light-absorbing substance is replaced with a highly-removed gas (hereinafter referred to as a purge gas). Nitrogen and rare gases are collectively called inert gases. In addition, the concentration of the light-absorbing substance (impurity substance) (or its allowable concentration) may vary depending on the type of light-absorbing substance existing in the optical path. For example, the concentration of the organic-type light-absorbing substance that will produce a shielding substance is strictly controlled at 1 to Below 10 ppm, water vapor and other substances can be sequentially reduced in concentration. In addition, the concentration of the light-absorbing substance (or its optical path in the illumination optical system, the optical path in the projection optical system, the reticle, the wafer type, and the interior of the mounting system) Allow 値) to make it different from other parts. In addition, nitrogen gas can be used as a gas (purge gas) transmitted by an exposure light beam up to a wavelength of about 150 nm in the vacuum ultraviolet region, but it functions as a light-absorbing substance for light having a wavelength of about 150 nm or less. Here, it is preferable to use a rare gas as a sweep gas with respect to the exposure light beam having a wavelength of about 150 nm or less. Among the rare gases, helium is preferred from the viewpoints of the stability of the refractive index and the high thermal conductivity. However, as ammonia is more expensive, other rare gases can also be used in situations such as emphasis on operating costs. In addition, as a purge gas, not only a single type of gas can be supplied, 10 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) " ------------- I- --- Order --------- (Please read the notes on the back before filling out this page) Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 522459 A7 B7 V. Description of the invention (\) Can also be mixed The gas is, for example, a gas in which nitrogen and helium are mixed in a predetermined ratio. In this example, since stability of refractive index (stability of imaging characteristics), high thermal conductivity (high cooling effect), and the like are emphasized, helium gas is used as the purge gas. Therefore, for example, a gas supply device (not shown) is provided in a mechanical room below the bed provided with the projection exposure device of this example, and a plurality of air-tight chambers in the projection exposure device and the attached device are set to a high pressure slightly higher than the atmospheric pressure. (Positive pressure) Supply high-purity purge gas, and recycle the gas sent to each airtight chamber as needed to reuse. _ Hereinafter, the configuration of the projection exposure device of this example will be described in detail. Fig. 1 is a partial front view showing the projection exposure apparatus of this example, and Fig. 2 is a side view of the projection exposure apparatus. In FIG. 1, in the sub-chamber 9 as an airtight chamber, an optical integrator for uniformizing the illumination distribution, a variable aperture (σ aperture) for switching lighting conditions, a relay lens, and field of view light are housed. The illuminating optical system composed of 圏, condenser lens, etc., is emitted by an exposure light source (not shown) as a pulse of exposure light with a wavelength of 193 nm, that is, exposure light (exposure illumination light) IL, which passes through the sub-chamber 9 The illumination optical system is irradiated on the groove-shaped illumination area which is limited to the reticle R1 (or R2) used as a mask. This lighting field is, for example, roughly centered on its optical axis AX in the circular field of view of the projection optical system PL. When scanning and exposing, relative to this lighting field, it is limited to scanning that moves relative to the reticle. The non-scanning direction orthogonal to the direction. The exposure light IL irradiated on the reticle R1 (or R2) is incident as 11 paper sizes. Applicable to China National Standard (CNS) A4 (210 X 297 mm)- ----------------- ^ --------- (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 522459 A7 B7 V. Description of the invention (V) Projection optical system PL of the projection system. Furthermore, the exposure light IL passing through the projection optical system PL is irradiated to a groove-shaped exposure area defined on a photoresist-coated wafer W1 (or W2) that is a photosensitive substrate (exposed substrate) (about projection optics) System PL is a field that forms a conjugate with the field of lighting). That is, an image of a part of the pattern formed on the reticle R1 (or R2) in the lighting field is obtained by the projection optical system PL at a projection magnification of / 3 (cold to 1/4 or 1/5, etc.) Projection on this exposure area. In addition, using the projection magnification / 5 as a speed ratio, the ft reticle R1 and the wafer W1 are moved synchronously in a predetermined scanning direction, that is, the reticle R1 is relatively moved with respect to the lighting field, and the wafer W1 is synchronized with this. Relative movement relative to the exposure area. With this synchronous movement, the area formed by the pattern on the reticle R1 is fully illuminated by the exposure light IL, and a predetermined area (photographic area) on the wafer W1 to which the pattern is to be transferred is exposed by the exposure light IL. Scanning exposure, so the pattern image of the reticle R1 is transferred to a photographic area on the wafer W1. Here, the reticle R1 and R2 may be regarded as the first object, and the wafers W1 and W2 may be regarded as the second object. The wafers W1 and W2 are objects corresponding to the exposure target of the present invention. The wafers W1 and W2 are, for example, circular-shaped substrates such as semiconductors (such as Shi Xi) or SOI (silicon on insulator) having a diameter of 200 mm or 3.0 mm. As the projection optical system PL, for example, as disclosed in International Publication No. WOOO / 39623 and the corresponding U.S. Patent Application No. 644645 (application dated August 24, 2000), a straight-type reflective refracting system (from Equipped with a plurality of refractive lenses along one optical axis and two concave mirrors with openings near each optical axis), or use a straight cylinder type 12 This paper size is applicable to China National Standard (CNS) A4 (210 X 297) Mm) IIIIIIIIII-— — — — III «ΙΙΙΙΙΙΙΙ — (Please read the notes on the back before filling out this page) 522459 A7 _ B7 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperatives V. Refraction system of the invention (8) (Constructed by arranging refractive lenses along one optical axis). Furthermore, as the projection optical system PL, a birefringent type refracting system or the like can also be used. As the glass material of the refractive member in the projection optical system PL, synthetic quartz, quartz glass doped with a predetermined impurity (such as fluorine), or fluorite can be used. In the following, the Z axis is taken parallel to the optical axis AX of the projection optical system PL, and is moved along the reticle R1 and the wafer W1 in a plane perpendicular to the Z axis (which is approximately the same as the horizontal plane in this example) during scanning exposure. The scanning direction (that is, the direction parallel to the paper surface in FIG. 1) is taken as the Y axis, and the non-scanning direction (that is, the direction perpendicular to the paper surface in FIG. 1) is taken as the X axis for explanation. Here, the overall configuration of the exposure main body will be described, including a table system supporting the reticle R1 and R2 of this example, a projection optical system PL, and a table system supporting the wafers W1 and W2. A highly rigid and thick flat plate-like plate 2 is placed on the bed. The plan view of the fixed plate 2 is shown in Fig. 4, and the shape of the fixed plate 2 is substantially triangular. Returning to Figures 1 and 2, three (four may be) pillars 3A, 3B, and 3C are provided at the apex positions of the approximately regular triangle on the fixed plate 2. On the pillars 3A to 3C, the vibration isolation table 4A ~ 4C. A support plate 5 having a triangular plate shape with a high rigidity and an opening through which the exposure light IL passes is provided in a central portion thereof. Vibration isolation tables 4A to 4C are active vibration isolation devices, including mechanical dampers (air dampers or hydraulic dampers, etc.), and electromagnetic dampers (by voice coil motors, etc.) Actuator). In this example, the first frame mechanism 6 is configured by the pillars 3A to 3C, the vibration isolation tables 4A to 4C, and the support plate 5. 13 (Please read the notes on the back before filling this page) ---- Order ---- ^ 91. This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210 X 297 mm) 522459 A7 __ ______ B7 V. Description of the invention) A guide surface with excellent flatness is formed on the support plate 5, and on this guide surface Place the reticule table 10 in a smooth, two-dimensional manner through an air bearing. On the reticule table 10, hold the reticules R1 and R2 by vacuum suction or the like, and keep it in the scanning direction (Υ direction). ) Adjacent. Therefore, the reticle table 10 of this example is a double holder method. For example, although double exposure can be efficiently performed, a dual table method of a movable table can be used for each reticle. In addition, the reticle table 10 can also be used in a single stage mode in which only one reticle is held. . The reticle table 10 is composed of, for example, a micro-motion table that holds the reticle R1 and R2, and a frame-shaped rough percussion table surrounding the reticle. The coarse motion stage is driven in the Y direction (scanning direction) by a linear motor (not shown), and the micro movement stage is rotated in the X direction, the γ direction, and the rotation direction of the coarse motion stage with respect to the coarse motion stage by, for example, three actuators. The direction driving is small, thereby driving the reticle R1, R2 in the + Υ direction or -Υ direction with a desired scanning speed and high accuracy, and can correct the synchronization error between the reticle R1 and the wafer W1. In addition, the reticle table 10 is constructed by using a moving member (counter mass: reverse block, etc.) not shown, and it is driven relative to the Y direction so that it can meet the amount of movement to be stored, and is hardly vibrated during scanning exposure. . In addition, a reticle interferometer 11 composed of a laser interferometer is configured to measure the position information of the reticle table 10 in the X direction and the Y direction, and the rotation angles around the X axis, Y axis, and Z axis . In this example, the reticle stage 10, the driving device (not shown), and the reticle interferometer 11 constitute a reticle stage system RST. The reticle stage system RST is formed by a highly air-tight box. Covered by the reticle chamber (the first room) 12, in the middle of the upper plate of the reticle chamber 12, this paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (please read the back first) Please fill in this page again for the matters needing attention) -------- Order ---- Printed by the Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 522459 A7 B7 V. Description of the invention (\ 71) The department formed the exposure light IL to pass Window. Although the reticle dryness meter 11 of this example measures the position of the reticle stage 10 with a reference mirror (not shown) fixed in the reticle chamber 12 as a reference, it can also be set on the projection optical system PL. The reference mirror is used as a reference to measure the position of the reticle table 10. On the support plate 5, three pillars 7A, 7B, and 7C are provided at positions substantially surrounding the apex of the triangle of the reticle chamber 12. Supports are formed on the pillars 7A to 7C to form openings through which the exposure light IL passes. A plate 8 is provided on the supporting plate 8 and the supporting plate 5 with a sub-chamber 9 for accommodating at least a part of the illumination optical system. Furthermore, a reticle mounting system RRD is provided on the support plate 5 in the area adjacent to the reticle chamber I2 in the -Y direction to exchange the reticle R1 and R2 on the reticle table 10. The reticle mounting system rrd is, for example, a device for accommodating an on-line exchange mechanism in a box having a certain degree of airtightness. The reticle mounting system RRD may be installed in another frame mechanism different from the first frame mechanism. Next, in FIG. 1 and FIG. 2, three disc-shaped air cushions 13A, 13B, and 13C are placed on the fixed plate 2 in a region surrounded by three pillars 3A to 3C. Can slide in X and Y directions. The pillars 14A to 14C are fixed to the air cushions 13A to 13C, and the pillars 14A to 14C pass through the active vibration isolation tables 15A to 15C, which are the same as the vibration isolation tables 4A to 4C, and are provided with a highly rigid triangular flat plate-shaped support.板 16。 Plate 16. A U-shaped notch portion 16 a formed from an end portion of the support plate 16 in the + X direction (directly forward of FIG. 1) to the central portion is provided with a projection optical system PL through a flange portion, and the notch portion 16 a The open end of the paper is fixed by bolts. The paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) -------- Order ---- The Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs prints 522459 A7 B7 V. Description of Invention (VX) The plate-shaped connecting member 18 closes it. That is, the projection optical system PL system is supported so as to be able to move in and out of the support portion 16 in the + X direction. (Please read the precautions on the back before filling this page.) In this example, the second frame mechanism 17 is composed of air cushions 13A to 13C, cylinders 14A to 14C, vibration isolation tables 15A to 15C, and support plates 16. 2 The frame mechanism 17 corresponds to the frame mechanism of the present invention. In this example, the second frame mechanism 17 can be smoothly slid on the fixed plate 2 by the air cushions 13A to 13C. FIG. 3 is an enlarged cross-sectional view showing the configuration of the air cushion 13B in FIG. 1. ‘In FIG. 3, ejection ports 13Ba, 13Bb for ejecting compressed high-pressure gas are formed on the bottom surface of the air cushion 13B, that is, the contact surface with the fixed plate 2. When the cylinder 14B is moved, the air cushion 13B is connected to a compressor 37 for supplying high-pressure air through a pipe 36, and high-pressure air is ejected from the ejection ports 13Ba and 13Bb. The other air cushions 13A and 13C can also smoothly move the second frame mechanism 17 on the plate 2 by spraying high-pressure air. It is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and returns to Figure 1 and Figure 2. The area substantially surrounded by the second frame mechanism 17 on the fixed plate 2, that is, the area substantially surrounded by the three columns 14A to 14C of the second frame mechanism 17, is weighed at the position of a substantially triangular vertex. 3 air cushions 21A, 21B, 21C. Furthermore, a wafer chamber 23 (a second air-tight chamber having a substantially rectangular box shape) is provided on the air cushions 21A, 21B, and 21C through the active vibration isolation tables 22A, 22B, and 22C similar to the vibration isolation tables 15A to 15C. Stage chamber), and a wafer stage system WST is housed inside the wafer chamber 23. Therefore, the high-pressure air sprayed from the air cushions 21A to 21C can smoothly move the wafer chamber 23 on the platen 2 with small force. In this example, this 16-sheet scale applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) '522459 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () High pressure is emitted from the air cushion The method of moving a given mechanism by air is called an "air cushion sliding method". A wafer pedestal 24 is fixed to a central portion of the bottom surface of the wafer chamber 23, and an upper surface of the wafer pedestal 24 is processed into a guide surface having excellent flatness. On this guide surface, the first wafer stage 25A and the second wafer stage 25B are slidably placed on the X-direction, through the X-axis guide member 27 and the Y-axis guide member 26 via air bearings, respectively. Y direction. Further, on the wafer tables 25A and 25B, the first wafer W1 'and the second wafer W2 are held by vacuum suction or the like, respectively. The wafer stages 25A and 25B are continuously moved in the γ direction by a linear motor, for example, and are moved stepwise in the X and Y directions. At this time, the wafer tables 25A and 25B respectively move through the reverse directions of the X-axis guide member 27 and the Y-axis guide member 26, and are driven relative to the X direction and Y direction to meet the amount of movement preservation, and when stepped It is constructed with almost no vibration during scanning exposure. In addition, the Z leveling mechanism (sample table) in the wafer tables 25A and 25B is used for leveling and focusing, so that it can be displaced in the Z direction of the wafers W1 and W2 and around the two axes (that is, Around the X axis and Y axis). In this case, the wafer stage in this example is a double wafer stage. the way. In addition, a wafer interferometer 28 composed of a laser interferometer is provided so as to face the moving mirror (mirror surface) on the side of the wafer tables 25A and 25B, and the wafer interferometer 28 is used to place the wafer interferometer 23 inside. A reference mirror (not shown) is used as a reference, and the positions in the X direction and the Y direction of the meter-side wafer stages 25A and 25B, and the rotation angles around the X axis, Y axis, and Z axis. In addition, the wafer interferometer 28 can also be fixed to the reference mirror of the projection optical system PL as a reference, and the crystal 17 can be used. This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mmΥ-'"- ---------------- 丨 Order --------- (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 522459 A7 B7 V. Description of the invention (χ >) The position meter side of the round tables 25A and 25B. In this example, the wafer tables 25A and 25B, the driving device (X-axis guide 27, Y-axis guide 26 Etc.) and the wafer interferometer 28 to form the wafer stage system WST, and an opening through which the exposure light IL passes is formed in the central portion of the upper plate of the wafer chamber 23 in which the wafer stage system WST is housed. The wafer mounting system WRD for exchanging the wafers W1 and W2 on the wafer tables 25A and 25B is adjacent to the -Y side surface of the wafer chamber 23 on the platen 2. The wafer mounting system WRD, for example, The exchange mechanism is housed in a box having a certain degree of airtightness. Furthermore, although not shown, an alignment sensor for wafer alignment is arranged in the wafer chamber 23 An alignment microscope for reticle alignment is arranged in the reticle chamber 12. In FIG. 1, the Y-axis interferometer unit 31A is fixed along the + Y direction end of the support plate 16 of the second frame mechanism 17. The measurement light beam from the measurement unit 31A is a reference mirror 35A irradiating the Y axis of the projection optical system PL, and a moving mirror 34A of the Y axis of the wafer chamber 23. Further, the support plate along the first frame mechanism 6 5 of the + Y direction end, the auxiliary unit 32A for transmitting the measuring beam is fixed, the measuring beam from the interferometer unit 3 1A passes through the auxiliary unit 32A and irradiates the Y-axis moving mirror 33 of the reticle chamber 12. A. The interferometer unit 31A measures the position in the Y direction of the reticle chamber 12 and the wafer chamber 23 and the rotation angle around the Z axis using the projection optical system PL (reference mirror 35A) as a reference. Similarly, in Fig. 2, the auxiliary unit 32B and the interferometer unit 31B are fixed to the ends in the -X direction of the support plates 5 and 16, respectively. The measuring beams from the interferometer unit 31B are respectively irradiated to the projection optical system PL. The 18 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ------------ -------- ^ --------- (Please read the notes on the back before filling out this page) 522459 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 ) The X-axis reference mirror 35B and the X-axis moving mirror 34B of the wafer chamber 23. Further, the measurement beam from the interferometer unit 31B passes through the auxiliary unit 32B and irradiates the X-axis moving mirror 33B of the reticle chamber 12. The interferometer unit 31B measures the position of the reticle chamber 12 and the wafer chamber 23 in the X direction and the rotation angle around the Z axis based on the projection optical system PL (reference mirror 35B). In this example, the position of the reticle table 10 relative to the reticle chamber 12 measured with the reticle interferometer 11 and the wafer chamber measured with respect to the wafer interferometer 28 are established. The position information of the wafer tables 25A and 25B of 23 is corrected, and the position information of the reticle chamber 12 and the wafer chamber 23 based on the projection optical system PL measured by the interferometer units 31A and 31B is corrected. The projection optical system PL is used as a reference, and position information of the reticle stage 10 (the reticle R1 and R2) and the wafer stages 25A and 25B (the wafers W1 and W2) are measured with high accuracy. In addition, by controlling the movement of the reticle stage 10 and the wafer stages 25A and 25B based on the measurement results, high-accuracy scanning exposure can be performed. Accordingly, when the pattern images of the reticle R1 and R2 are exposed on the wafers W1 and W2, high exposure accuracy (alignment accuracy and transfer reliability) can be obtained. In addition, the wafer stage system WST of this example is a dual wafer stage method. For example, in the scanning exposure of the wafer W1 placed on the first wafer stage 25A, it can be carried out and placed on the first wafer stage 25B. The wafer W2 is exchanged and aligned, so high throughput can be obtained. In Figs. 1 and 2, the edge sensors 19 of the scanning laser beam method are fixed to the auxiliary units 32A and 32B fixed to the first frame mechanism 6 (please read the precautions on the back before filling this page). Binding ----- This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 522459 Printed by A7 B7, member of the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperative V. Description of invention (d) 39A, 39B. The edge sensors 39A and 39B are respectively based on the i-th frame mechanism 6 (supporting plate 5), and can detect the position XPL in the X direction and the position Ypl in the Y direction of the projection optical system PL. In addition, instead of the edge sensors 39A and 39B used for the position detection of the projection optical system PL, a position detection device of another method such as a laser interferometer with higher accuracy can be used. Next, in the projection exposure apparatus of this example, vacuum ultraviolet light is used as the exposure light IL. Here, in order to increase the transmittance of the exposure light IL, that is, to increase the illuminance of the exposure light IL on the wafers W1 and W2 to obtain high productivity, in this example, a high transmittance is provided in the optical path of the exposure light IL. Gas (helium is used in this example). That is, in FIG. 1, a high-purity purge gas from a gas supply device (not shown) is supplied to the sub-chamber 9, the reticle chamber 12, the projection optical system PL, and the wafer chamber through piping (not shown). twenty three. The gas (purge gas) inside the sub-chamber 9, the reticle chamber 12, the projection optical system PL, and the wafer chamber 23 can be recovered to the gas supply device through a pipe (not shown) as necessary. , And use, for example, chemical filters to remove impurities. Further, in this example, the space between the sub-chamber 9 and the reticle chamber 12, the space between the reticle chamber 12 and the projection optical system PL, and the wafer chamber 23 and the crystal. The space between the round mounting systems WRD is hermetically sealed by thin film-shaped soft shielding members 29A, 29B, 29C, and 29D, which have large flexibility and high gas-barrier properties, to isolate them from outside air, respectively. In addition, the soft shielding members 29A to 29D of this example are formed by processing a soft sheet into a corrugated shape of a cylinder, and both end portions thereof are passed through, for example, a flange portion made of ceramic, and are respectively fixed to corresponding ones by bolts or the like. component. The flexible shielding member 29A is also referred to as a covering member. In addition, 20 US $ Zhang scales are applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) _ (Please read the precautions on the back before filling this page) -------- Order ---- Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 522459 A7 B7 V. Description of the invention (v \) The space between the reticle chamber 12 and the wafer mounting system WRD is also sealed with soft components. The soft shielding members 29A to 29D do not necessarily have a corrugated shape, but may be formed into a cylindrical shape in the original planar shape, for example. Accordingly, the optical path of the exposure light IL from the illumination optical system to the wafers W1 and W2 as the substrates to be exposed is almost completely sealed. Therefore, the optical path of the exposure light IL is hardly mixed with a gas containing a light-absorbing substance from the outside, and the attenuation of the exposure light can be suppressed. Further, by using the soft shielding members 29A to 29D, vibrations generated in the reticle chamber 12 and the wafer chamber 23, for example, are not transmitted to the projection optical system PL, so that the mutual influence of the vibrations can be reduced. In addition, a transmission optical system (bearn matching unit) disposed between the exposure light source and the illumination optical system and including a beamn matching unit for adjusting the optical positional relationship between the exposure light and the optical axis of the illumination optical system ( The optical path in (not shown) is also filled with the aforementioned purge gas, so that the attenuation of the exposure light in the transmission optical system can be suppressed. Furthermore, when the projection exposure device of this example is assembled, the flexible shielding member 29A and the like are only mounted at the flange portion with bolts or the like, and therefore can be easily installed in a very short time. Furthermore, for example, when the wafer chamber 23 and the frame mechanism 17 are moved for exchange of the projection optical system PI ^, the soft shielding member 29B can be easily removed only by removing the bolts and the like of the flange portion. under. In addition, for example, when the wafer chamber 23 and the frame mechanism 17 are moved to exchange the projection optical system PL, the connecting portion of the purge gas supply pipe and wiring can be easily removed, and the pipe and wiring The connection portion is provided in a connection structure that is easy to detach. Secondly, with reference to Figure 4, the projection exposure device used to support this example will be described in accordance with the Chinese standard (CNS) A4 snail (210 X 297). (Please read the precautions on the back before filling this page) Binding ---- Order ---- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 522459 A7 _ _ B7 V. The second frame mechanism of the projection optical system PL of the invention description (γ °) and used to store the wafer table The relationship between the wafer chamber 23 of the system WST. FIG. 4 is a plan view showing the platen 2 in FIG. 1. In FIG. 4, on a fixed plate having a substantially triangular flat plate, the three pillars 3A to 3C of the first frame mechanism 6 shown in FIG. 1 are fixed at the positions of approximately regular triangle vertices. On the inside of the three pillars 3A to 3C, the positions of the vertexes of a substantially triangular triangle are slidably placed on the second frame mechanism 17-part of the three pillars MA to MC (corresponding to the "foot" of the present invention乂. Furthermore, three anti-vibration tables 22A to 22C to support the wafer chamber 23 (wafer table system WST) are slidably mounted on the inside of the three pillars 3A to 3C at approximately the vertices of a regular triangle. (Corresponds to the "support section" of the present invention). The second frame mechanism Π-a part of the support plate 16 supports the projection optical system PL. In this case, two of the columns 14A to 14C The interval D2 in the γ direction of MA and MB is set to be wider than the maximum interval D1 in the Y direction of the vibration isolation tables 22A to 22C. That is, the following formula is formed: D2> D1. . . (1) According to this, the wafer chamber 23 of this example passes between the pillars 14A to 14C of the second frame mechanism 17 and can be pulled out in the + X direction (the front side of the device) shown by the arrow A1. Thereafter, the second frame mechanism Π equipped with the projection optical system PL can be pulled out in the + X direction shown by the arrow A2. Next, an example of an assembling procedure in manufacturing the projection exposure apparatus of this example will be described with reference to the flowchart of FIG. 6. In step 101 of FIG. 6, the fixed plate 2 in FIG. 1 is set on a bed in a clean room of a semiconductor manufacturing plant, for example, and assembled on the fixed plate 2. FIG. 22 This paper is in accordance with China National Standards (CNS) A4 specification (210 X 297 mm) ---- I -------------- Order --------- (Please read the precautions on the back before filling this page ) 522459 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. The first framework of the invention description (Λ) 1. Prior to this operation, the second frame mechanism 17 of FIG. 1 is assembled in advance in step II1, and the notch portion 16a of the support plate 16 of the second frame mechanism 17 is equipped with a projection optical system PL whose optical characteristics have been adjusted. Next, in step 102, a second frame mechanism 17 supporting the projection optical system PL is placed on the fixed plate 2. At this time, the compressor is connected to the air cushions 13A to 13C, and the second frame mechanism 17 is slidably slid in a gas sliding manner on the fixed plate 2. In parallel with the operations so far, in step 12, the assembly and adjustment of the wafer stage system WST and the wafer chamber 23 are performed in advance. Next, in step 103, a wafer chamber 23 is provided through the air cushions 21A to 21C and the vibration isolation tables 22A to 22C between the pillars 14A to 14C (inside area) of the second frame mechanism 17 on the fixed plate 2. The wafer mounting system WRD is connected to the wafer chamber 23. At this time, the wafer chamber 23 is slid smoothly on the platen 2 by a gas sliding method. Next, in step 104, the first frame mechanism 6 is assembled with a reticle table system RST, a reticle chamber 12, and a sub-chamber 9 including an illumination optical system, and a reticle mounting system RRD. At this time, the illumination optical system is connected to the aforementioned transmission optical system (not shown) connected to the exposure light source. Also, in this example, although the entire illumination optical system is housed in the sub-chamber 9. It is also possible to store only a part of the illumination optical system in the sub-room 9, and the remaining part in another sub-room different from the sub-room 9. As an example of the illumination optical system, in the illumination optical system, a field diaphragm (a standard aperture) that is substantially conjugate to the pattern surface of the reticle and is driven in synchronization with the movement of the reticle and the wafer during scanning exposure is provided. The line piece baffle or shadow mask plate) is closer to the side of the line wipe piece and is stored in the sub-chamber 9. The remaining portion (including the view _ 23 --------------- ---- Order --------- (Please read the notes on the back before filling out this page) This paper size applies to China National Standard (CNS) A4 specification C210 X 297 mm) Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Employee Consumer Cooperative 522459 A7 ----- B7 V. Invention Note (yv) Aperture) is housed in another room. The other sub-chamber is preferably supported by another frame mechanism different from the first frame mechanism 6, for example. Further, the other frame mechanism may be arranged on the platen 2 in a direction opposite to the + X direction in which the second frame mechanism 17 and the wafer chamber 23 are pulled out (-X, relative to the first frame mechanism 6). direction). In addition, the other frame mechanism can be assembled or assembled in parallel before the first frame mechanism 6 on the fixed plate 2. Then, in step 105, the mechanical, electrical, and optical overall adjustment is performed. The purge gas supply mechanism is configured. After assembling the flexible shielding members 29A to 29D, the purge gas supply mechanism is adjusted to complete the projection exposure device of the module mode (or box mode) of this example. In this state, the edge sensors 39A and 39B of FIGS. 1 and 2 detect the position XPL in the X direction and the position YPL in the Y direction with respect to the projection optical system PL of the first frame mechanism 6, and The detection result is stored in a memory section of a main control system (not shown). Thereafter, in the process of long-term exposure using the projection exposure apparatus of FIG. 1, for example, a shielding substance is attached to the optical elements (lenses, etc.) constituting the projection optical system PL, so that the transmittance of the projection optical system PL is lower than two times. In the case where the tolerance is too large, or the predetermined aberration deteriorates beyond the allowable range, in order to readjust the projection optical system PL, the exchange order of the projection optical system PL is implemented as shown in FIG. 7.
此處，在圖7之步驟121，在定盤2之前設置與定盤 2相同厚度之平板狀的調整台38 (圖2中以2點鎖線表示 者）。其次，在步驟122，拆下圖1之軟性遮蔽部件29B 24 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） (請先閱讀背面之注意事項再填寫本頁} 裝--------訂·！ 華 經濟部智慧財產局員工消費合作社印製 522459 A7 B7 五、發明說明（ιΛ ) 、29C、29D，並且如圖4中箭頭A3所示般在將晶圓搭載 系統WRD拆下後，將未圖示之壓縮機連結於晶圓室23之 氣墊21Α〜21C。其次，如圖2中箭頭Α1所示，以氣體滑 動方式將晶圓室23沿+X方向移動’並將晶圓室23由定盤 2上往調整台38上移動（步驟123 )。 其後，將壓縮機連結於第2框架機構17之氣墊 13A〜13C (步驟124)。其次，如圖2中箭頭2A所示，以 氣體滑動方式將第2框架機構17沿+x方向移動’並將第 2框架機構17移動至調整台38上之位置17A (步驟125) 。藉此，將投影光學系統PL移動至位置17A。 又，在步驟126，在第2框架機構17上，將投影光學 系統PL與相同機種且光學特性調整完成之投影光學系$ 交換。又，例如在容易且迅速地進行構成投影光學系統PL 之光學元件（透鏡等）之遮蔽物的淸掃等情況，亦可不必、 進行投影光學系統PL之交換而加以淸掃。 其後，在步驟127，將搭載有調整完成之投影光學-系 •統之第2框架機構17以氣體滑動方式運回定盤2上。此時 ，進行第2框架機構17之定位，俾以邊緣感測器39A' 3$B所檢出之投影光學系統之X方向及Y方向的位寘變胃 如上述所儲存之位置Χρι及位置YPL。 其次，在步驟128，以氣體滑動方式移動晶圓室23 ’ 將晶圓室23運回至第2框架機構17之柱體14A〜14C之Γ曰1 ，並將晶圓搭載系統WRD連結於晶圓室23。其後’在_ 行晶圓室23之位置關係調整等之後，組裝軟性遮蔽部件 25 -----------裝--------訂---------^9. (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 522459 A7 B7 五、發明說明（〆） 29B、29C、29D，完成投影光學系統PL之交換程序。 本例之投影曝光裝置，係在第2框架機構17之柱體 14A〜14C之間，以可滑動狀態而設置晶圓室23、（防振台 22A〜22C)。因此，在將晶圓室23移動至調整台38上之 後，可容易且迅速地將第2框架機構17移動至調整台38 上。因此，可極容易且迅速地進行投影光學系統PL之交 換。又，透過以氣體滑動方式移動晶圓室23及第2框架機 構17，更可提升作業效率。 * 又，在進行投影光學系統PL之交換後，使用邊緣感 測器39A、39B將交換後之投影光學系統的位置設定在原 來位置。因此，可以極短時間完成交換後之光學調整。同 樣地，再設定後之晶圓室23，例如亦可透過以第2框架機 構17爲基準進行對位，而可縮短調整時間。進而，如圖1 所示，在本例，係將標線片搭載系統RRD及晶圓搭載系統 WRD —起設置於曝光本體部之側面。因此，曝光本體部之 前面，可作爲投影光學系統PL交換時之調整用空間而使 ，用。 又，亦可將標線片搭載系統RRD及晶圓搭載系統 WRD設置於曝光本體部之前面，將第2框架機構17 (投 影光學系統PL)及晶圓室23相對於曝光本體部而自其側 面拉出，或使標線片搭載系統RRD及晶圓搭載系統WRD 自曝光本體部之前面偏離，其後，將第2框架機構17及晶 圓室23自曝光本體部之前面側拉出亦可。 其次，參照圖5，說明本發明之另一實施形態。 26 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---- 經濟部智慧財產局員工消費合作社印製 522459 A7 _ B7 五、發明說明（〆） 圖5係表示適用於本例之投影曝光裝置’對應於圖4 中之定盤2之大致呈梯形之定盤2A之俯視圖。又，由於 與圖1之投影曝光裝置之差異’僅在於用以支持投影光學 系統PL之第2框架機構、及用以支持晶圓室之防振台之 構成，因此，以下僅以該差異爲中心加以說明，其他構成 則省略其說明。 在圖5，於定盤2A上，將圖1所示之第1框架機構6 之3個柱體3A〜3C固定於大致呈正三角形的頂點位置。在 該3個柱體3A〜3C內側’弟2框架機構17 (在圖5並未 圖示）的一部份之4個柱體14A〜14D (腳部）係以可滑動 方式載置於大致呈正方形的頂點位置。進而，在該第2框 架機構，固定用以支持投影光學系統PL之支持板16A。 又，在柱體14A〜14D內側，用以支持晶圓室23A (收納有 圖1之晶圓台系統WST)之4個防振台22A〜22D (支持部 )係以可滑動方式載置於大致呈長方形的頂點位置。在此 場合，柱體MA〜HD的Y方向之間隔係設定爲比防振台 22A〜22D的Y方向之最大寬度更寬。 依此，本例之晶圓室23A，可在第2框架機構之柱體 14A〜14D間沿箭頭B4所示之-X方向（裝置背面）滑動。 因此，當進行本例之投影光學系統PL之交換時，不必移 動晶圓室23A，而可將支持板16A沿與箭頭B4所示之方 向相反之箭頭B1所示之+X方向拉出。因此，依本例，當 進行投影光學系統PL之交換時，由於可在定盤2A上載置 晶圓室23A之狀態下將支持投影光學系統PL之支持板 27 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公爱) " -----------.——丨丨丨丨訂--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 522459 A7 一 B7 五、發明說明（六） 16A (第2框架機構）運出，因此，可以更短時間進行投 影光學系統PL之交換。 又，在上述各實施形態，支持投影光學系統PL之框 架機構（第2框架機構17等），雖以3個柱體14A〜14C 或4個柱體14A〜14D支持，但該柱體（腳部）的數量可爲 任意個，並且該框架機構的腳部例如可由截面形狀爲V字 形或C字形等一體化之構件形成。進而，該腳部例如可與 支持板16、16A —體化而形成。同樣地，支持晶圓室23 之防振台22A〜22C (或22A〜22D)的數量可爲任意個，而 支持晶圓室23、23A、或投影光學系統PL之框架機構， 在定盤2、2A上可沿既定方向滑動而構成亦可。 又，在上述各實施形態，由於在第2框架機構17的底 面設置氣墊13A〜13C，因此可以氣體滑動方式圓滑地動第 2框架機構17。但，例如在以小型起重機等移動第2框架 機構17之場合，則不必設置氣墊13A〜13C。同樣地，在 以小型起重機等移動晶圓室23、23A之場合，亦不必設置 ，氣墊13A〜13C。 關於用以使第2框架機構17、及晶圓室23、23A滑動 之機構並未限於氣體滑動方式。例如，在以小型起重機等 移動之場合，這些滑動件幾乎係以非接觸方式進行。又， 透過球體軸承等阻力極小之滑動機構而滑動第2框架機構 17等亦可。 又，在圖1，由於標線片Rl、R2之圖案面與投影光 學系統PL兩者之工作距離（working distance)較短，因 28 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） ------------裝--------訂---------^91 (請先閱讀背面之注意事項再填寫本頁} 522459 經濟部智慧財產局員工消費合作社印製 A7 JB7_ ---------- 五、發明說明（Λ) 此亦考慮到以支持板5覆蓋投影光學系統PL之前端部之 構成。在此構成，使投影光學系統PL相對於支持板16而 將其下降之構成，或預先設置使柱體14A〜14C進行上下動 之機構，在將第2框架機構17拉出之前，使投影光學系統 PL或支持板16下降亦可。 進而，在上述各實施形態，雖計測交換後之投影光學 系統的位置，但，亦可預先將晶圓之對準感測器及光學感 測器模組化而設置於支持板16上，並計測這些對準感測器 、或光學感測器之位置。 又，在上述各實施形態，雖將投影光學系統與別的投 影光學系統交換，但亦可僅交換投影光學系統的一部份。 此時，可進行以投影光學系統之光學元件爲單位而交換， 或在具有複數個鏡筒之投影光學系統以該鏡筒爲單位而進 行交換亦可。進而，自用以支持投影光學系統之框架機構 (第2框架機構17)將投影光學系統全部拆下，並將其一 部份進行交換，或在以該框架機構支持投影光學系統之狀 .態下，自投影光學系統僅將必要的一部份拆下亦可。 又，自曝光本體部拉出後之投影光學系統的一部份不 進行交換，而僅自用以支持投影光學系統之框架機構將其 至少一部份拆下並進行調整後運回投影光學系統亦可。該 調整例如進行光學元件之洗淨或再加工，特別係對應於透 鏡元件之需要而將其表面加工爲非球面。該光學元件不僅 係透鏡元件等之折射光學元件，亦可爲例如凹面鏡等之反 射光學元件，或用以補正投影光學系統之像差（失真、球 29 ---1----------11--- 訂 — —------- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 522459 A7 B7 五、發明說明（4) 面像差等）特別係用以補正其非旋轉對稱成分之像差補正 板亦可。進而，自曝光本體部拉出後之投影光學系統的一 部份不必從框架機構拆下，例如亦可變更至少一個光學元 件的位置（含其他光學元件之間隔）及傾斜等。特別是當 光學元件爲透鏡元件時，可變更其偏芯，或以光軸爲中心 而加以旋轉。 又，在上述各實施形態，雖於投影光學系統之納入處 (半導體製造工廠等）進行投影光學系統（投影系統）之 拆下、交換、或調整等，但在投影曝光裝置之製造工廠同 樣亦可應用本發明進行投影光學系統之調整等亦可。 進而，於投影光學系統之納入處在其運用開始之後， 例如在晶圓台WST上使用配置有受光面之光檢出器（照明 度斑點感測器、照射量監視器等），定期計測投影光學系 統PL，並於定期計測期間算出其透射率的變化。又，使用 檢出標線片的圖案像之受光面係配置於晶圓台WST上之空 間像檢出器，或將其圖案像轉印於晶圓等，檢出該轉印像 (潛像、光阻像等），定期計測投影光學系統之光學特性 (像差等），並於定期計測期間算出其光學特性之變化。 ,又’用以整體控制投影曝光裝置之主控制系統（未圖 示）’較佳係例如在進行投影光學系統之交換或調整等， 當投影光學系統之透射率達到所需之容許値（下限値）之 時點’或投影光學系統之光學特性變爲在進行其交換或調 整等所需之容許範圍外之時點，停止曝光動作，並對投影 曝光裝置之顯示器（監視器）顯示警告，或透過網路或行 30 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) --------訂----- 經濟部智慧財產局員工消費合作社印製 522459 A7 B7 五、發明說明（yp 動電話等對操作員等通知其必要性。此時，亦可一倂通知 投影光學系統（或其一部份）之有無交換及交換處、投影 光學系統之調整處及其方法等、以及投影光學系統之交換 或調整所需之資訊。依此，不僅投影光學系統之交換或調 整等作業時間，其準備期間亦可縮短，因此，可縮短投影 曝光裝置之停止時間，即可提升其運轉率。 又，較佳係在將完成交換或調整等之投影光學系統運 回曝光本體部之後，透過前述之空間像檢出器或轉印像之 檢出等而計測投影光學系統之光學特性，若有必要則根據 該計測結果而調整其光學特性。此時，例如可透過致動器 (壓電元件等）驅動投影光學系統之至少一個光學元件’ 及調整曝光光源且略變更曝光光之中心波長等，俾調整其 光學特性亦可。 又，在上述各實施形態，可計測投影光學系統之波面 像差，並使甩該波面像差及查涅克（Zernike)多項式算出 投影光學系統之像差等。此時，例如透過配置於標線片與 投影光學系統間之針孔，形成標線片圖案之投影像，並以 2度空間CCD檢出該投影像，或將該投影像轉印於晶圓等 ，,.根據該投影像或該轉印像的位置和既定之基準位置兩者 之差而計測波面像差亦可。 進而，在上述各實施形態之投影曝光裝置爲模組方式 (盒體方式），本發明之效果較大，此外，例如將標線片 台系統及晶圓台系統之構件依序組裝於基座部件上的方式 之投影曝光裝置亦可適用本發明。同樣地，取代上述各實 31 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ----訂---------線· 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 522459 A7 ________B7 五、發明說明（妒） 施形態之標線片台系統RST或晶圓台系統WST，而使用單 固定器方式之單台系統之場合亦可適用本發明。 又，在上述各實施形態，雖使用定盤2、2A作爲基座 部件，但基座部件並未僅限於定盤，例如可使用腳輪框架 (搬運用具有車輪之基座框架）等，或在無塵室內設置有 投影曝光裝置之床等作爲基座部件亦可。 進而，投影光學系統PL可爲折射系統、反射折射系 統、及反射系統之任一種，以及縮小系統、等倍系統、及 放大系統之任一種皆可。又，投影光學系統PL並未限於 直筒型及雙筒型，例如將直筒型之第1鏡筒和該第i鏡筒 正交之第2鏡筒予以組裝而成者亦可。 又’在上述各實施形態，雖將本發明應用於掃描曝光 方式之投影曝光裝置，本發明並未限於此，亦可將其應用 於步進重複（step and repeat)方式等整體曝光型（靜止曝 光型）之投影曝光裝置、接近（proximity)方式之曝光裝 置，或以EUV (遠紫外線）及X光作爲曝光光束之曝光裝 置’及以電子線、離子束（能量線）作爲光源（能量源） 之荷電粒子線曝光裝置。 ,又，作爲曝光裝置之用途，並未限於半導體元件製造 用之曝光裝置’例如，亦可廣泛地應用於用以製造形成於 角型玻璃基板之液晶顯示元件，或電漿顯示器等顯示裝置 用之曝光裝置、攝影元件（CCD等）、微型機器、薄膜磁 頭、DNA晶片等各種元件。進而，本發明亦可應用於使用 微影製程而製造形成有各種元件之圖案的蔭罩（光罩、標 32 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------—I—訂--------- (請先閱讀背面之注意事項再填寫本頁) 522459 A7 --------®Z---—-------- 五、發明說明） 線片等）時之曝光製程（曝光裝置）。 又，在使用線性馬達於晶圓台系統及標線片台系統之 場合，可使用空氣軸承之空氣浮上型、或磁氣浮上型等任 一方式保持可動台。進而，在抵銷可動台的反作用力之場 合，除了以運動量保存則予以抵銷之外，亦可使該反作用 力引導至床面之構成。 又，半導體裝置，係經由進行裝置之機能、性能設計 之步驟；根據該設計步驟而製作標線‘片之步驟；以矽材製 作晶圓之步驟；藉由前述實施形態之投影曝光裝置將標線 片之圖案曝光於晶圓之步驟；裝置組裝之步驟(包含切割製 程、接線製程、封裝製程）；及檢查步驟等而製造。 又’本發明並未限於上述之實施形態，在藉由未脫離 本發明之要旨的範圍，當然亦可獲得各種之構成。 (請先閱讀背面之注意事項再填寫本頁) 裝 ----訂----- 辱. 經濟部智慧財產局員工消費合作社印製 3 3 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）Here, in step 121 of Fig. 7, a flat plate-shaped adjustment table 38 (indicated by a 2-point lock line in Fig. 2) is provided before the plate 2 in the same thickness as the plate 2. Next, in step 122, remove the soft shielding member 29B in Figure 1. 24 This paper size applies the Chinese National Standard (CNS) A4 specification (210 x 297 mm) (Please read the precautions on the back before filling out this page.) ------- Order ... Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs of China 522459 A7 B7 V. Description of the invention (ιΛ), 29C, 29D, and the wafer is being displayed as shown by arrow A3 in Figure 4 After the mounting system WRD is removed, a compressor (not shown) is connected to the air cushions 21A to 21C of the wafer chamber 23. Next, as shown by the arrow A1 in FIG. 2, the wafer chamber 23 is moved in the + X direction by a gas sliding method. Move 'and move the wafer chamber 23 from the platen 2 to the adjustment table 38 (step 123). Thereafter, the compressor is connected to the air cushions 13A to 13C of the second frame mechanism 17 (step 124). Second, as As shown by an arrow 2A in FIG. 2, the second frame mechanism 17 is moved in the + x direction by a gas sliding method and the second frame mechanism 17 is moved to a position 17A on the adjustment table 38 (step 125). Thus, the projection is performed. The optical system PL is moved to the position 17A. Further, in step 126, the projection optical system on the second frame mechanism 17 The system PL is exchanged with the projection optical system of the same model and the optical characteristics are adjusted. For example, it is not necessary to sweep the shields of the optical elements (lenses, etc.) constituting the projection optical system PL easily and quickly. Then, the projection optical system PL is exchanged and cleaned. Then, in step 127, the second frame mechanism 17 equipped with the adjusted projection optical system is transported back to the fixed plate 2 by gas sliding. Here At this time, the positioning of the second frame mechanism 17 is performed, and the positions of the X-direction and the Y-direction of the projection optical system detected by the edge sensor 39A ′ 3 $ B are changed to the stomach as the stored position Xρ and the position YPL Next, in step 128, the wafer chamber 23 is moved in a gas-sliding manner, and the wafer chamber 23 is transported back to 1 of the pillars 14A to 14C of the second frame mechanism 17, and the wafer mounting system WRD is connected to Wafer chamber 23. Thereafter, after the positional relationship adjustment of the wafer chamber 23, etc., the soft shielding member 25 is assembled. ------- ^ 9. (Please read the precautions on the back before filling this page) This paper size applies to China Standard (CNS) A4 (210 X 297 mm) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 522459 A7 B7 V. Description of the invention (〆) 29B, 29C, 29D, complete the exchange process of the projection optical system PL. This The projection exposure device of the example is provided between the pillars 14A to 14C of the second frame mechanism 17, and the wafer chamber 23 (the vibration isolator 22A to 22C) is provided in a slidable state. Therefore, after the wafer chamber 23 is moved to the adjustment table 38, the second frame mechanism 17 can be easily and quickly moved to the adjustment table 38. Therefore, the projection optical system PL can be exchanged extremely easily and quickly. Moreover, by moving the wafer chamber 23 and the second frame mechanism 17 in a gas sliding manner, the working efficiency can be further improved. * After exchanging the projection optical system PL, use the edge sensors 39A and 39B to set the position of the exchanged projection optical system to the original position. Therefore, the optical adjustment after the exchange can be completed in a very short time. Similarly, the re-set wafer chamber 23 can also be adjusted by using the second frame mechanism 17 as a reference, thereby reducing the adjustment time. Further, as shown in FIG. 1, in this example, the reticle mounting system RRD and the wafer mounting system WRD are installed on the side of the exposure body portion together. Therefore, the front surface of the exposure main body can be used as a space for adjustment when the projection optical system PL is exchanged. Alternatively, the reticle mounting system RRD and the wafer mounting system WRD may be provided in front of the exposure main body portion, and the second frame mechanism 17 (projection optical system PL) and the wafer chamber 23 may be positioned relative to the exposure main body portion. Pull out from the side, or make the reticle mounting system RRD and wafer mounting system WRD deviate from the front of the exposure main body, and then pull the second frame mechanism 17 and wafer chamber 23 from the front side of the exposure main body. can. Next, another embodiment of the present invention will be described with reference to FIG. 5. 26 This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page). Printed by the Consumer Affairs Cooperative of the Property Bureau 522459 A7 _ B7 V. Description of the invention (〆) Figure 5 shows a plan view of a projection exposure device suitable for this example, 'a substantially trapezoidal fixing plate 2A corresponding to the fixing plate 2 in Figure 4 . In addition, since the difference from the projection exposure apparatus of FIG. 1 'is only in the structure of the second frame mechanism to support the projection optical system PL and the vibration isolator to support the wafer chamber, the following only uses this difference as The description will be given in the center, and the description will be omitted for other structures. In FIG. 5, the three pillars 3A to 3C of the first frame mechanism 6 shown in FIG. 1 are fixed on the fixed plate 2A at the apex positions of a substantially regular triangle. Inside the three pillars 3A to 3C, the four pillars 14A to 14D (legs) that are part of the frame mechanism 17 (not shown in FIG. 5) are slidably placed on roughly Vertices in square shape. Furthermore, a support plate 16A for supporting the projection optical system PL is fixed to the second frame mechanism. In addition, inside the pillars 14A to 14D, four vibration-proof tables 22A to 22D (support sections) for supporting the wafer chamber 23A (containing the wafer stage system WST of FIG. 1) are slidably placed. The position of the apex of a roughly rectangular shape. In this case, the interval in the Y direction of the columns MA to HD is set to be wider than the maximum width in the Y direction of the vibration isolation tables 22A to 22D. According to this, the wafer chamber 23A of this example can slide between the pillars 14A to 14D of the second frame mechanism in the -X direction (back of the device) shown by the arrow B4. Therefore, when the projection optical system PL of this example is exchanged, it is not necessary to move the wafer chamber 23A, and the support plate 16A can be pulled out in the + X direction shown by the arrow B1 opposite to the direction shown by the arrow B4. Therefore, according to this example, when the projection optical system PL is exchanged, since the support plate for the projection optical system PL can be supported in the state that the wafer chamber 23A is placed on the fixed plate 2A, this paper standard applies to the Chinese national standard (CNS ) A4 specification (210 x 297 public love) " -----------.—— 丨 丨 丨 丨 Order --------- (Please read the notes on the back before filling (This page) Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 522459 A7-B7 V. Description of the invention (6) 16A (the second frame mechanism) is shipped out, so the projection optical system PL can be exchanged in a shorter time. In each of the above embodiments, the frame mechanism (second frame mechanism 17 and the like) supporting the projection optical system PL is supported by three pillars 14A to 14C or four pillars 14A to 14D, but the pillar (leg The number of parts can be any number, and the leg portion of the frame mechanism can be formed of an integral member such as a V-shaped or C-shaped cross-section, for example. Furthermore, the leg portion can be formed integrally with the support plates 16, 16A, for example. Similarly, the number of vibration isolation tables 22A to 22C (or 22A to 22D) supporting the wafer chamber 23 may be any number, and the frame mechanism supporting the wafer chamber 23, 23A, or the projection optical system PL is on the fixed plate 2 2A can be constructed by sliding in the predetermined direction. In each of the above embodiments, since the air cushions 13A to 13C are provided on the bottom surface of the second frame mechanism 17, the second frame mechanism 17 can be smoothly moved in a gas sliding manner. However, for example, when the second frame mechanism 17 is moved by a small crane or the like, it is not necessary to provide air cushions 13A to 13C. Similarly, when the wafer chambers 23 and 23A are moved by a small crane or the like, air cushions 13A to 13C need not be provided. The mechanism for sliding the second frame mechanism 17 and the wafer chambers 23 and 23A is not limited to the gas sliding method. For example, when moving by a small crane or the like, these sliders are almost non-contact. Further, the second frame mechanism 17 or the like may be slid through a sliding mechanism having extremely low resistance such as a ball bearing. In addition, in Figure 1, the working distance between the pattern surface of the reticle R1, R2 and the projection optical system PL is short, so the 28 paper standards are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public love) ------------ install -------- order --------- ^ 91 (Please read the precautions on the back before filling this page} 522459 Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 JB7_ ---------- V. Description of the Invention (Λ) This also considers the composition of the front end of the projection optical system PL covered by the support plate 5. With this configuration, the projection optical system PL is lowered relative to the support plate 16, or a mechanism for moving the columns 14A to 14C up and down is provided in advance, and the projection optical system is made before the second frame mechanism 17 is pulled out It is also possible to lower the PL or the support plate 16. In each of the above embodiments, although the position of the projection optical system after the exchange is measured, the alignment sensor of the wafer and the optical sensor may be modularized in advance. It is installed on the support plate 16 and measures the positions of these alignment sensors or optical sensors. State, although the projection optical system is exchanged with other projection optical systems, it is also possible to exchange only a part of the projection optical system. At this time, the optical components of the projection optical system may be exchanged as a unit, or a plurality of projection optical systems may be exchanged. It is also possible to exchange the projection optical system of the lens barrel with the lens barrel as a unit. Furthermore, the projection optical system is completely removed from a frame mechanism (second frame mechanism 17) for supporting the projection optical system, and a part of the projection optical system is removed. Exchange, or in the state that the frame mechanism supports the projection optical system. In the state, the self-projection optical system can only remove a necessary part. Moreover, one of the projection optical systems after the self-exposure body is pulled out Parts are not exchanged, but only the frame mechanism used to support the projection optical system can be removed and adjusted and then returned to the projection optical system. The adjustment can be performed, for example, by washing or reprocessing the optical components. In particular, the surface is processed into an aspheric surface corresponding to the needs of a lens element. The optical element is not only a refractive optical element such as a lens element, but also a concave Reflective optical elements such as mirrors, or used to correct the aberrations of the projection optical system (distortion, sphere 29 --- 1 ---------- 11 --- order---------- (Please read the precautions on the back before filling out this page) This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) 522459 A7 B7 V. Description of the invention (4) Area aberration, etc. It is also possible to correct an aberration correction plate having a non-rotationally symmetric component. Furthermore, a part of the projection optical system after being pulled out from the exposure body does not need to be removed from the frame mechanism, for example, the position of at least one optical element may be changed ( Including the spacing of other optical components) and tilt. In particular, when the optical element is a lens element, its eccentricity can be changed or it can be rotated around the optical axis. In each of the above-mentioned embodiments, the projection optical system (projection system) is removed, exchanged, or adjusted at the place where the projection optical system is incorporated (semiconductor manufacturing plant, etc.), but the same applies to the manufacturing plant of the projection exposure apparatus. The present invention can be applied to the adjustment of the projection optical system. Furthermore, after the projection optical system is incorporated after its operation is started, for example, a light detector (illumination speckle sensor, exposure level monitor, etc.) with a light receiving surface is arranged on the wafer table WST, and the projection is periodically measured. The optical system PL calculates the change in transmittance during the periodical measurement. The light-receiving surface for detecting the pattern image of the reticle is a space image detector disposed on the wafer table WST, or the pattern image is transferred to a wafer, etc., and the transferred image (latent image) is detected. , Photoresistance image, etc.), periodically measure the optical characteristics (aberrations, etc.) of the projection optical system, and calculate the changes in its optical characteristics during the periodical measurement. Also, the "main control system (not shown) for integrally controlling the projection exposure device" is preferably, for example, exchange or adjustment of the projection optical system, etc., when the transmission of the projection optical system reaches the required allowance (lower limit)値) When the point of time 'or the optical characteristics of the projection optical system becomes outside the allowable range required for its exchange or adjustment, stop the exposure operation and display a warning to the display (monitor) of the projection exposure device, or Internet or line 30 This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) -------- Order ---- -Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 522459 A7 B7 V. Description of the invention (yp mobile phone, etc. to inform operators and others of the need. At this time, you can also notify the projection optical system (or a part of it) at once Whether there are exchanges and exchanges, adjustments of projection optical systems and methods thereof, and information required for exchanges or adjustments of projection optical systems. Accordingly, not only exchanges or adjustments of projection optical systems, etc. The operating time and the preparation period can also be shortened. Therefore, the stopping time of the projection exposure device can be shortened, and the operating rate can be improved. It is also preferable to return the projection optical system after the exchange or adjustment is completed to the exposure main body. The optical characteristics of the projection optical system are measured through the aforementioned aerial image detector or transfer image detection, and if necessary, the optical characteristics are adjusted based on the measurement results. At this time, for example, an actuator ( (Piezoelectric element, etc.) driving at least one optical element of the projection optical system, adjusting the exposure light source, slightly changing the center wavelength of the exposure light, etc., and adjusting its optical characteristics. In each of the above embodiments, the projection optical system can be measured. The wavefront aberration is calculated, and the wavefront aberration and Zernike polynomial are used to calculate the aberration of the projection optical system. At this time, for example, a pinhole disposed between the reticle and the projection optical system is used to form a standard. The projected image of the line pattern, and the projected image is detected by a 2 degree space CCD, or the projected image is transferred to a wafer, etc., based on the projected image or the transferred image It is also possible to measure the wavefront aberration by the difference between the position and a predetermined reference position. Furthermore, the projection exposure apparatus in each of the above embodiments is a module method (box method), and the effect of the present invention is large. In addition, for example, The invention can also be applied to a projection exposure device in which the components of the reticle stage system and the wafer stage system are sequentially assembled on the base member. Similarly, instead of the above-mentioned facts, 31 paper standards are applicable to Chinese National Standards (CNS) A4 specification (210 X 297 mm) (Please read the notes on the back before filling out this page) ---- Order --------- Line · Ministry of Economic Affairs Intellectual Property Bureau Employee Consumption Cooperative Printed Ministry of Economy Printed by the Intellectual Property Bureau's Consumer Cooperative 522459 A7 ________B7 V. Description of the invention (jealousy) The reticle stage system RST or wafer stage system WST of the application form can also be applied to the case of a single system using a single holder method. invention. In each of the above embodiments, although the fixed plates 2 and 2A are used as the base member, the base member is not limited to the fixed plate. For example, a caster frame (a base frame with wheels for transportation) or the like may be used. A bed or the like provided with a projection exposure device in a clean room may be used as a base member. Furthermore, the projection optical system PL may be any of a refractive system, a refracting and refracting system, and a reflecting system, and may be any of a reduction system, an equal magnification system, and an enlargement system. Further, the projection optical system PL is not limited to a straight type and a double type, and for example, a straight type first lens barrel and an i-th lens barrel orthogonal to each other may be assembled. Also, in each of the above embodiments, although the present invention is applied to a projection exposure apparatus of a scanning exposure method, the present invention is not limited to this, and it can also be applied to an overall exposure type (still) such as a step and repeat method. Exposure type) projection exposure device, proximity exposure device, or exposure device using EUV (extreme ultraviolet) and X-rays as exposure beams, and electron beams, ion beams (energy rays) as light sources (energy sources ) Charged particle beam exposure device. Also, the use of an exposure device is not limited to an exposure device for semiconductor device manufacturing. For example, it can also be widely used to manufacture liquid crystal display elements formed on angular glass substrates, or display devices such as plasma displays. Exposure devices, photographic elements (CCD, etc.), micro-devices, thin-film magnetic heads, DNA wafers and other components. Furthermore, the present invention can also be applied to a shadow mask (mask, standard 32 paper size) that uses the lithography process to form patterns of various elements. This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm)- ---------— I—Order --------- (Please read the notes on the back before filling this page) 522459 A7 -------- ®Z --- —-------- V. Description of the invention) Line film, etc.) exposure process (exposure device). When a linear motor is used in the wafer stage system and the reticle stage system, the movable stage may be held by an air bearing type or a magnetic air type. Furthermore, in the case where the reaction force of the movable table is cancelled, the reaction force can be guided to the bed surface in addition to being saved by the amount of motion to be offset. In addition, the semiconductor device is a step of designing the function and performance of the device; a step of making a reticle according to the design step; a step of making a wafer from a silicon material; The pattern of the line piece is exposed to the wafer; the device assembly step (including the cutting process, the wiring process, the packaging process); and the inspection step. The present invention is not limited to the above-mentioned embodiments, and various configurations can be obtained without departing from the scope of the present invention. (Please read the precautions on the back before filling out this page) Binding ---- Order ----- Disgrace. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 3 3 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)