TW507385B - Cross under metal interconnection structure of self scanning light-emitting device - Google Patents

Cross under metal interconnection structure of self scanning light-emitting device Download PDF

Info

Publication number
TW507385B
TW507385B TW089119323A TW89119323A TW507385B TW 507385 B TW507385 B TW 507385B TW 089119323 A TW089119323 A TW 089119323A TW 89119323 A TW89119323 A TW 89119323A TW 507385 B TW507385 B TW 507385B
Authority
TW
Taiwan
Prior art keywords
under metal
cross under
emitting device
interconnection structure
scanning light
Prior art date
Application number
TW089119323A
Other languages
English (en)
Inventor
Seiji Ohno
Original Assignee
Nippon Sheet Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Sheet Glass Co Ltd filed Critical Nippon Sheet Glass Co Ltd
Application granted granted Critical
Publication of TW507385B publication Critical patent/TW507385B/zh

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/435Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
    • B41J2/447Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources
    • B41J2/45Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources using light-emitting diode [LED] or laser arrays
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/435Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
    • B41J2/447Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources
    • B41J2/45Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources using light-emitting diode [LED] or laser arrays
    • B41J2002/453Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources using light-emitting diode [LED] or laser arrays self-scanning
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Led Devices (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW089119323A 1999-09-21 2000-09-20 Cross under metal interconnection structure of self scanning light-emitting device TW507385B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26686799A JP4362905B2 (ja) 1999-09-21 1999-09-21 自己走査型発光装置、書き込み用光源および光プリンタ

Publications (1)

Publication Number Publication Date
TW507385B true TW507385B (en) 2002-10-21

Family

ID=17436764

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089119323A TW507385B (en) 1999-09-21 2000-09-20 Cross under metal interconnection structure of self scanning light-emitting device

Country Status (8)

Country Link
US (1) US6507057B1 (zh)
EP (1) EP1142721A4 (zh)
JP (1) JP4362905B2 (zh)
KR (1) KR20010101038A (zh)
CN (1) CN1171736C (zh)
CA (1) CA2351368A1 (zh)
TW (1) TW507385B (zh)
WO (1) WO2001021412A1 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4292747B2 (ja) * 2002-02-25 2009-07-08 富士ゼロックス株式会社 発光サイリスタおよび自己走査型発光素子アレイ
TWI246783B (en) * 2003-09-24 2006-01-01 Matsushita Electric Works Ltd Light-emitting device and its manufacturing method
US6943578B1 (en) 2004-03-31 2005-09-13 International Business Machines Corporation Method and application of PICA (picosecond imaging circuit analysis) for high current pulsed phenomena
JP4882236B2 (ja) * 2004-04-28 2012-02-22 富士ゼロックス株式会社 電極コンタクト構造およびその製造方法
CN101452976B (zh) * 2007-12-06 2011-03-30 泰谷光电科技股份有限公司 高亮度发光二极管结构
US9064947B2 (en) 2009-08-04 2015-06-23 Gan Systems Inc. Island matrixed gallium nitride microwave and power switching transistors
US9818857B2 (en) 2009-08-04 2017-11-14 Gan Systems Inc. Fault tolerant design for large area nitride semiconductor devices
JP5636655B2 (ja) 2009-09-16 2014-12-10 富士ゼロックス株式会社 発光チップ、プリントヘッドおよび画像形成装置
JP6096109B2 (ja) * 2010-04-13 2017-03-15 ジーエーエヌ システムズ インコーポレイテッド アイランドトポロジを用いる高密度窒化ガリウム装置
CN105280556B (zh) * 2014-07-22 2018-02-23 环视先进数字显示无锡有限公司 一种led显示模组的集成方法
JP6840969B2 (ja) * 2016-09-21 2021-03-10 セイコーエプソン株式会社 Memsデバイス、液体噴射ヘッド、及び、液体噴射装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2577034B2 (ja) 1988-03-18 1997-01-29 日本板硝子株式会社 自己走査形発光素子アレイおよびその駆動方法
JP2784010B2 (ja) 1988-09-30 1998-08-06 日本板硝子株式会社 自己走査型発光素子アレイ
JP2790631B2 (ja) 1988-07-01 1998-08-27 日本板硝子株式会社 自己走査形発光素子アレイ
JP2784011B2 (ja) 1988-09-30 1998-08-06 日本板硝子株式会社 自己走査型発光素子アレイ
JP2577089B2 (ja) 1988-11-10 1997-01-29 日本板硝子株式会社 発光装置およびその駆動方法
JP2784025B2 (ja) * 1989-02-07 1998-08-06 日本板硝子株式会社 光走査装置
JP2785542B2 (ja) * 1991-10-02 1998-08-13 日本電気株式会社 半導体拡散層抵抗
US6180960B1 (en) * 1995-04-12 2001-01-30 Nippon Sheet Glass Co., Ltd. Surface light-emitting element and self-scanning type light-emitting device
JP3595044B2 (ja) * 1995-10-05 2004-12-02 日本板硝子株式会社 自己走査型発光装置およびこれを用いた光プリンタ装置
JP3647968B2 (ja) * 1996-04-10 2005-05-18 日本板硝子株式会社 自己走査型発光装置

Also Published As

Publication number Publication date
EP1142721A4 (en) 2003-06-25
CA2351368A1 (en) 2001-03-29
JP2001094153A (ja) 2001-04-06
WO2001021412A1 (fr) 2001-03-29
US6507057B1 (en) 2003-01-14
KR20010101038A (ko) 2001-11-14
JP4362905B2 (ja) 2009-11-11
EP1142721A1 (en) 2001-10-10
CN1171736C (zh) 2004-10-20
CN1321123A (zh) 2001-11-07

Similar Documents

Publication Publication Date Title
EP0872887A3 (en) Multilevel interconnection structure having an air gap between interconnects
EP0895285A3 (en) Amorphous hydrogenated carbon hermetic structure and fabrication method
TW507385B (en) Cross under metal interconnection structure of self scanning light-emitting device
EP1255300A3 (en) Semiconductor package
TW546750B (en) Semiconductor device
TW332334B (en) The semiconductor substrate and its producing method and semiconductor apparatus
DE69737762D1 (de) Verbesserungen in Bezug auf integrierte Schaltungen
AU2003241280A1 (en) Method of fabricating vertical structure leds
KR100310492B1 (en) Semiconductor device and its manufacture
WO2002099873A3 (en) Dual damascene multi-level metallization
EP0791960A3 (en) Semiconductor devices having protruding contacts and method for making the same
EP0875936A3 (en) Wiring substrate having vias
EP0898308A3 (en) A method for forming a metal interconnection in a semiconductor device
EP1146558A3 (en) Damascene wiring structure and semiconductor device with damascene wirings
EP0343667A3 (en) Contact structure for connecting electrode to a semiconductor device and a method of forming the same
TW333686B (en) The semiconductor device and its producing method
TW344892B (en) Method of forming a semiconductor metallization system and structure therefor
TW344125B (en) Semiconductor device and its manufacture
SG143975A1 (en) Method of manufacturing a semiconductor device
EP1777739A3 (en) Semiconductor device and fabrication method therefor
MY143405A (en) N-type nitride semiconductor laminate and semiconductor device using same
SE9500152L (sv) Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt
TW345742B (en) Method for producing integrated circuit capacitor
EP0759635A3 (en) Planarized final passivation for semiconductor devices
EP1148543A3 (en) Semiconductor device and process of manufacturing the same

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees