TW500841B - Controlled neck growth process for single crystal silicon - Google Patents

Controlled neck growth process for single crystal silicon Download PDF

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Publication number
TW500841B
TW500841B TW090104084A TW90104084A TW500841B TW 500841 B TW500841 B TW 500841B TW 090104084 A TW090104084 A TW 090104084A TW 90104084 A TW90104084 A TW 90104084A TW 500841 B TW500841 B TW 500841B
Authority
TW
Taiwan
Prior art keywords
neck
rate
less
patent application
diameter
Prior art date
Application number
TW090104084A
Other languages
English (en)
Chinese (zh)
Inventor
Hiroyo Haga
Makoto Kojima
Shigemi Saga
Original Assignee
Memc Electronic Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memc Electronic Materials filed Critical Memc Electronic Materials
Application granted granted Critical
Publication of TW500841B publication Critical patent/TW500841B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW090104084A 2000-02-22 2001-04-18 Controlled neck growth process for single crystal silicon TW500841B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000044369 2000-02-22
JP2000136811A JP4521933B2 (ja) 2000-02-22 2000-05-10 シリコン単結晶の成長方法

Publications (1)

Publication Number Publication Date
TW500841B true TW500841B (en) 2002-09-01

Family

ID=26585834

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090104084A TW500841B (en) 2000-02-22 2001-04-18 Controlled neck growth process for single crystal silicon

Country Status (5)

Country Link
EP (1) EP1259664A2 (ja)
JP (1) JP4521933B2 (ja)
KR (1) KR20020081343A (ja)
TW (1) TW500841B (ja)
WO (1) WO2001063022A2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114096699A (zh) * 2019-07-11 2022-02-25 硅电子股份公司 通过切克劳斯基法提拉硅单晶的方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10137856B4 (de) * 2001-08-02 2007-12-13 Siltronic Ag Durch tiegelloses Zonenziehen hergestellter Einkristall aus Silicium
EP1974077A2 (en) 2006-01-20 2008-10-01 BP Corporation North America Inc. Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics
JP4857920B2 (ja) * 2006-06-07 2012-01-18 株式会社Ｓｕｍｃｏ シリコン単結晶の製造方法
US8440157B2 (en) 2007-07-20 2013-05-14 Amg Idealcast Solar Corporation Methods and apparatuses for manufacturing cast silicon from seed crystals
WO2009015168A1 (en) 2007-07-25 2009-01-29 Bp Corporation North America Inc. Methods for manufacturing geometric multi-crystalline cast materials
US8709154B2 (en) 2007-07-25 2014-04-29 Amg Idealcast Solar Corporation Methods for manufacturing monocrystalline or near-monocrystalline cast materials
KR101515373B1 (ko) * 2014-10-22 2015-04-28 하나머티리얼즈(주) 높은 내구성을 갖는 플라즈마 처리 장치용 단결정 실리콘 부품의 제조 방법
KR101665827B1 (ko) * 2014-12-30 2016-10-12 주식회사 엘지실트론 잉곳 계면의 형상을 제어할 수 있는 단결정 성장 방법
JP6439536B2 (ja) * 2015-03-26 2018-12-19 株式会社Sumco シリコン単結晶の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04104988A (ja) * 1990-08-20 1992-04-07 Fujitsu Ltd 単結晶成長方法
US5501172A (en) * 1994-03-11 1996-03-26 Shin-Etsu Handotai Co., Ltd. Method of growing silicon single crystals
US5487355A (en) * 1995-03-03 1996-01-30 Motorola, Inc. Semiconductor crystal growth method
US5578284A (en) * 1995-06-07 1996-11-26 Memc Electronic Materials, Inc. Silicon single crystal having eliminated dislocation in its neck
JP2973917B2 (ja) * 1996-03-15 1999-11-08 住友金属工業株式会社 単結晶引き上げ方法
US5885344A (en) * 1997-08-08 1999-03-23 Memc Electronic Materials, Inc. Non-dash neck method for single crystal silicon growth
JPH11199384A (ja) * 1997-12-27 1999-07-27 Shin Etsu Handotai Co Ltd シリコン単結晶の成長方法
JP3440819B2 (ja) * 1998-04-07 2003-08-25 信越半導体株式会社 シリコン単結晶の製造方法
JP4224906B2 (ja) * 1999-10-29 2009-02-18 株式会社Ｓｕｍｃｏ シリコン単結晶の引上げ方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114096699A (zh) * 2019-07-11 2022-02-25 硅电子股份公司 通过切克劳斯基法提拉硅单晶的方法
CN114096699B (zh) * 2019-07-11 2023-10-13 硅电子股份公司 通过切克劳斯基法提拉硅单晶的方法

Also Published As

Publication number Publication date
JP4521933B2 (ja) 2010-08-11
WO2001063022A3 (en) 2002-07-25
KR20020081343A (ko) 2002-10-26
WO2001063022A2 (en) 2001-08-30
JP2001316198A (ja) 2001-11-13
EP1259664A2 (en) 2002-11-27

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