TW472284B - Field emission display and the manufacturing method thereof - Google Patents

Abstract

The present invention provides a field emission display employing the nanotube emitters in place of microtips and a manufacturing method for this device employing thick film printing technique in place of the thin film deposition and photo etching method. In such a device, each layer comprises a layer of nanotube emitter material which can be formed on a glass substrate by thick film printing technique. The microntube emitter material may be a material of carbon, diamond or a mixture of diamond-like and a solvent glue. The composite slurry has a viscosity suitable for the thick film printing treatment. The diameter of the nanotube according to the invention is between about 30 microntube and about 50 microntube. The screen printing or thick film printing in the present invention is of lower costs than the thin film deposition and photo etching. Furthermore, because the substrate in the deposition chamber for the thin film deposition process is limited in the size, the thick film printing technique does not have the size limitation on the contrast. The method in the present invention is particularly suitable for large scale of field emission display screen.

Description

472284 、發明說明（1) 【發明領域】 ^發明通常有關一種場發射顯示器（FEI))裝置及製造 =1發射顯示器（FED )裝置之方法，更特別有關以奈米 e 發射極（nanotube emi tters)取代微尖端（micr〇tips)當 做電子發射源之一種場發射顯示器裝置，及利用厚膜印刷 技術製造此場發射顯示器（FE]))裝置之方法。 【發明背景】 近年來’發展之平面顯示器已廣泛用於電子產品，例如 個人電腦及中小尺寸通訊用顯示面板。平面顯示器之主動 陣列液晶顯示提供較佳之解析度。然液晶顯示器具有許多 固有的限制，不適於許多應用。例如，液晶顯示具有許多 製造限制’非晶石夕薄膜沉積於玻璃基板過程之高複雜性， ，低生產良f。此外’液晶顯示器需要背光板，消耗大功 率’浪費大1的光。此外在光線較強狀況下，或在寬視角 下、’並不易看見液晶顯示影像，因此限制很多應用領域。 近年來已發展其他平面顯示器，以取代液晶顯示面板。 其中之一此褒置為場發射顯示裝置，其克服液晶顯示 (LCD)之一些限制’且較習用液晶顯示（LCD)器提供更多之 優點。例如’場發射顯示器較傳統薄膜晶體管（TFT)液晶 顯不面板具有較面的對比度，較大的視角，較高的最高亮 度，較低的功率消耗量，及較寬的工作溫度範圍。 场發射顯不（FED)與液晶顯示（LCD)最大不同點在於：場 發射顯示（FED)利用彩色螢光粉產生自己的光源。場發射 顯不（FED)不需複雜且消耗電力的背光及濾光片，因此使472284, Description of the invention (1) [Field of invention] ^ The invention generally relates to a field emission display (FEI) device and a method for manufacturing a = 1 emission display (FED) device, and more particularly to a nanometer e emitter (nanotube emi tters). ) Instead of microtips as a field emission display device for electron emission sources, and a method for manufacturing this field emission display (FE)) device using thick film printing technology. [Background of the Invention] In recent years, the flat display developed has been widely used in electronic products, such as personal computers and small and medium-sized communication display panels. The active-array liquid crystal display of a flat panel display provides better resolution. However, liquid crystal displays have many inherent limitations and are not suitable for many applications. For example, liquid crystal displays have many manufacturing constraints, such as the high complexity of the process of depositing amorphous silicon thin films on glass substrates, and low production yields. In addition, the "liquid crystal display requires a backlight panel and consumes a large amount of power" and wastes a large amount of light. In addition, under strong light conditions or at wide viewing angles, it is not easy to see the LCD display image, which limits many applications. In recent years, other flat panel displays have been developed to replace liquid crystal display panels. One of these devices is a field emission display device that overcomes some of the limitations of liquid crystal displays (LCDs) and provides more advantages than conventional liquid crystal display (LCD) devices. For example, a ‘field emission display’ has a higher contrast ratio, a larger viewing angle, a higher maximum brightness, a lower power consumption, and a wider operating temperature range than a traditional thin film transistor (TFT) liquid crystal display panel. The biggest difference between a field emission display (FED) and a liquid crystal display (LCD) is that the field emission display (FED) uses color phosphors to generate its own light source. Field emission display (FED) does not require complicated and power-consuming backlights and filters, so

472284 五、發明說明（2) 用者可以看見場發射顯千 外，場發射顯示（FED)不兩大随 生大部份的光。此 .^ )不而大陣列之薄膜電晶體，因此除472284 V. Description of the invention (2) The user can see that the field emission display is thousands, and the field emission display (FED) is not two major parts of the light. This. ^) Is not a large array of thin film transistors, so

去主動陣列液晶顯示（L 在場發射顯示（FED中產良率問題。 背面之榮光體，以產生發光陰極η子，撞擊透明蓋板 光之最有效方法之一=用=極發光過程被認為產生 場發射顯示⑽）之每」辛用及之^極射線管（crt)相反， 差自陰極引發電子，極與閑門間之電磨 逯朝向螢光塗層。發射雷流、顯示 ί ί n射材料之功函數之關係相當密切。為達到場發 = =(FED)之必需效率’發射源材料之淨度Deactive array liquid crystal display (L field emission display (FED) yield problem. One of the most effective methods for the glare body on the back to generate the light emitting cathode η and hit the transparent cover plate = use = polar light emission process is considered to produce The field emission shows that each of the polar electrodes (crt) is opposite, the difference is that the electrons are induced from the cathode, and the electric friction between the pole and the gate is directed toward the fluorescent coating. The work function of the material is closely related. In order to achieve the necessary efficiency of field emission = = (FED), the purity of the source material

而非常重要。 V W ^ 了使電子可在場發射顯示（FED)中移動 射顯示⑽D)須維持於高真空條件下，例如1G_7=琢發 jorr)，以提供發射電子對數平均自由行程， 磨損。崎焦柵以準直來自微尖端：= 亦可以改良顯示器之解析度。 电丁 在早期發展的場發射陰極，俜搡用 射極。在此裝署Φ苦止？ 屬微尖頭端發 在此裝置中，頁先氧化矽晶圓，以產生一 :層’然後在氧化物之頂端沈積一金屬閘門層。金 :以=化形成間門開σ，隨後在開口下方蚀刻二氧：門 以避ΐίϊ一凹井洞口。沈積犧牲金屬層（例如A1鋁）， 尖狀射極井内沈積。然後鉬以垂直沈積，而使針 之大编在洞口内形成，直到開口於其上方關閉為=。It is very important. V W ^ In order to make the electrons move in the field emission display (FED), the radio display (D) must be maintained under a high vacuum condition, such as 1G_7 = 发 jorr), in order to provide the logarithmic mean free stroke of the emitted electrons, and wear. The Saki focal grid comes from the microtip with collimation: = The resolution of the display can also be improved. Ding uses a field-emission cathode in its early development, using an emitter. Is it hard to stop here? It belongs to the micro-tip end. In this device, the page is first oxidized on the silicon wafer to produce a layer: and then a metal gate layer is deposited on top of the oxide. Gold: Open the door with σ to form σ, and then etch the two oxygen below the opening: the door to avoid the entrance of a concave well. A sacrificial metal layer (such as A1 aluminum) is deposited and deposited in a pointed emitter well. Then molybdenum is deposited vertically, so that the needle stitch is formed in the opening, until the opening is closed above it =.

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當移除鎳犧牲層時，發射尖端即形成。 圖設Lt，f先在石夕上以熱氧化形成氧化物，然後 ” 以選擇性蝕刻，而形成石夕晶片，以形 J夕U尖端發射極。進一步氧化或蝕刻以形成矽尖端 ::設計中，微尖端係在理爾（例如玻璃）之基板上 可當做大面積平面顯示之理想基板。微尖端由導電 = 例二金屬或換雜半導體材料形成。在此場發射顯示 二(ED)裝置之设計中，在陰極與微尖端間沈積之具 層。合適的中間層電阻率使裝置可在穩定 工作。製造此場發射顯示器（FED)裝置，較佳沈積 矽Μ，該矽膜於固有非晶矽與n+摻雜非晶矽之間具 晶石夕之導電性。 &原子含1，可以控制n+換雜非 一般而言，於場發射顯示器（FED)裝置之製造過程中， 該裝置係才皮包含於非常低壓之空室中，因在匕不會阻礙電子 發射。例如：通常需要10_7托耳（t〇r〇之低壓。為避免 形成場發射顯示器（FED)裝置之兩相當大玻璃面板坍塌， 必需在兩面板間以隔板支撐及提供適當的間隔。例如，在 傳統之場發射顯示器（FED)裝置中，玻璃球已被用以維持 此場發射顯示器（FED)裝置之間隔。 首先請參照圖U，其為一習用場發射顯示（FED)裝置 (ίο)之放大横斷面圖。在一玻璃基板（14)上沈積—血 型非晶矽基膜之電阻層（12)，以形成場發射顯示（fed)〃 裝置（1 0 )。然後沈積一介電質材料之絕緣層（丨6 )及一When the sacrificial nickel layer is removed, an emission tip is formed. It is shown that Lt, f first forms oxides by thermal oxidation on Shi Xi, and then "selectively etches" to form Shi Xi wafers, shaped as U Xi U-tip emitters. Further oxidation or etching to form silicon tips :: Design In the middle, the microtips are ideal substrates for large-area flat display on the substrate of Lear (such as glass). The microtips are formed of conductive = Example 2 metal or mixed semiconductor materials. In this field emission display 2 (ED) device In the design, a layer is deposited between the cathode and the microtip. The appropriate interlayer resistivity enables the device to work stably. To manufacture this field emission display (FED) device, it is preferable to deposit silicon M, which is inherently Crystalline conductivity between amorphous silicon and n + -doped amorphous silicon. &Amp; Atoms containing 1, can control n + impurity substitution. Generally speaking, during the manufacturing process of field emission display (FED) devices, the The device skin is contained in a very low-pressure air chamber, because it does not hinder the emission of electrons. For example, a low voltage of 10-7 Torr (t0r0) is usually required. Large glass panel collapse It is necessary to support and provide a proper gap between the two panels. For example, in traditional field emission display (FED) devices, glass balls have been used to maintain the space between this field emission display (FED) devices. First please Referring to FIG. U, which is an enlarged cross-sectional view of a conventional field emission display (FED) device (ίο). A resistance layer (12) of a blood-type amorphous silicon-based film is deposited on a glass substrate (14) to form Field emission display (fed) device (1 0). Then an insulating layer (6) of a dielectric material and a

472284 五、發明說明（4) 金屬閘門層（1 8 )，並形成提供金屬 阻層⑴）覆蓋一陰極結構（22)屬二，該電 晶石夕層（12)位於一介電質材料例如二氧^導，= 構成的高絕緣層（16)下方。非 （J02)所 制伤北杳舌® U /續u 2 )之電阻值控 一阳如1要的，使非晶矽層不會有過大電阻，但可當做 限制電阻器，若直中一微尘總f 9 Π、 短路B# 嘁尖端（20 )接觸金屬層（18) 妞路時，可避免過大電流發生。 整個場發射顯示（FED)結構（3〇)包含一 固定在此結構（3〇)頂端上，如圖”（28) ’ 傅、川）頂鈿上，如圖1B所不。為簡化理由， ^之陰極層（22)及電阻層（12)以-陰極單層（22) 備端（20)自其尖端發射電子（26)。閘門電極 ，何，而陽極（28 )備有較高之正箪荷。陽極（28 係广塗有磷粒子（32 )之玻璃板(36)所形成。當電子 ^仙）衝擊時，可利用銦-錫-氧化層（34)之電極導電 ^，以進一步改善螢光層亮度。圖lc顯示其局部之放大橫 ^面圖。場發射顯示（FED)裝置之全部厚度僅約2毫米（咖 ，側壁板（38 )密封下玻璃板（14 )與上玻璃板（36 ) 《之真空（如圖1B所示）。 如圖1A至圖1C所示微尖端形成之習傳統場發射顯示 、，ED)裝置，與液晶顯示裝置相比較，其具有較佳品質之 2 1顯示裝置。然而，微尖端場發射顯示（FED)裝置之複 膜製程步驟為其主要缺點。例如，需要利用光蝕刻術之薄 /洗積技術’以形成該裝置之各種層及微尖端。因此，必 '執行許多遮光步驟，以界定及製造場發射顯示（FED)之472284 V. Description of the invention (4) Metal gate layer (1 8), and formed to provide a metal resistive layer 覆盖) to cover a cathode structure (22) belongs to the second group, the tourmaline layer (12) is located on a dielectric material such as Dioxin, = under the high insulation layer (16). The resistance value of non- (J02) wounded North Tongue ® U / continued u 2) The resistance value is controlled as required by 1 so that the amorphous silicon layer will not have excessive resistance, but it can be used as a limiting resistor. When the total dust f 9 Π, short-circuit B # 嘁 tip (20) contacts the metal layer (18), the excessive current can be avoided. The entire field emission display (FED) structure (30) includes a top fixed on the structure (30), as shown in (28) 'Fu, Chuan', as shown in Figure 1B. To simplify the reason, The cathode layer (22) and the resistive layer (12) are-the cathode single layer (22) and the preparation (20) emit electrons (26) from its tip. The gate electrode, Ho, and the anode (28) have a higher Positive charge. The anode (28 is formed by a glass plate (36) widely coated with phosphorus particles (32). When the electrons are impressed), the electrodes of the indium-tin-oxide layer (34) can be used to conduct electricity ^ The brightness of the fluorescent layer is further improved. Figure lc shows a partial enlarged cross-sectional view. The overall thickness of the field emission display (FED) device is only about 2 mm (the side wall plate (38) is sealed with the lower glass plate (14) and the top The glass plate (36) "vacuum (as shown in Fig. 1B). As shown in Figs. 1A to 1C, the conventional field emission display (ED) device with microtip formation is better than the liquid crystal display device. Quality 2 1 display device. However, the lamination process steps of the micro-tip field emission display (FED) device are its main disadvantages. For example, the need for profit The photoetching technique is used to form various layers and microtips of the device. Therefore, many shading steps must be performed to define and fabricate the field emission display (FED).

472284 五、發明說明（5) " - ^種1構特點。化學汽相沉積（CVD)沈積處理及光蝕刻術 增加場發射顯示（FED)裝置之製造成本。 因此，本發明之目的係提供一場發射顯示（F )裝置， 其無傳統場發射顯示（FED)裝置之缺失或弊端。 本發明之另一目的係提供一場發射顯示（FED)裝置，其 不需利用薄膜沈積技術及光蝕刻遮光術。 本發明之另一目的係提供一場發射顯示（FED)裝置，可 利用低成本之厚膜印刷技術製造此裝置。 本發明之另一目的係提供一場發射顯示（FED)裝置，其 可利用網版印刷技術及網目塗層各種圖案材料層。 本發明之另一目的係提供一場發射顯示（FED)裝置，該 裝置包含碳、鑽石或類鑽石之奈米管發射極層。 本發明之另一目的係提供一場發射顯示（FED)裝置，該 裝置包含由介電質材料之絕緣阻隔層。 本發明之另一目的係提供以一厚膜印刷技術製造場發射 顯示裝置之方法’其中奈米管發射極材料以網版印刷於高 電阻層，以形成相間隔之多數發射極堆疊。 本發明之另一目的係提供一製造場發射顯示裝置之方 法’其利用厚膜印刷技術，以形成一陰極層、一電阻層、 —奈来管電子發射極層、一介電質層於發射極堆疊之間 隙、一介電質層位於發射極堆疊頂端，與一當做閘門電極 之導電金屬層。 【發明之簡單說明】 根據本發明’揭示一場發射顯示裝置及此製程之方法。472284 V. Description of the invention (5) "-^ 1 structure features. Chemical vapor deposition (CVD) deposition processes and photolithography increase the manufacturing cost of field emission display (FED) devices. Therefore, the object of the present invention is to provide a field emission display (F) device, which is free from the defects or disadvantages of the traditional field emission display (FED) device. Another object of the present invention is to provide a field emission display (FED) device, which does not require the use of thin film deposition technology and photolithography. Another object of the present invention is to provide a field emission display (FED) device which can be manufactured using low-cost thick film printing technology. Another object of the present invention is to provide a field emission display (FED) device which can utilize screen printing technology and screen coating various patterned material layers. Another object of the present invention is to provide a field emission display (FED) device comprising a carbon, diamond or diamond-like nano tube emitter layer. Another object of the present invention is to provide a field emission display (FED) device including an insulating barrier layer made of a dielectric material. Another object of the present invention is to provide a method for manufacturing a field emission display device by a thick film printing technique, wherein the nanometer emitter material is screen-printed on a high-resistance layer to form a plurality of spaced-apart emitter stacks. Another object of the present invention is to provide a method for manufacturing a field emission display device, which uses a thick film printing technology to form a cathode layer, a resistance layer, a nano-tube electron emitter layer, and a dielectric layer for emission. The gap between the electrode stack, a dielectric layer is located at the top of the emitter stack, and a conductive metal layer serving as a gate electrode. [Brief description of the invention] According to the present invention, a field emission display device and a method of the process are disclosed.

第8頁 472284 五、發明說明（6) 在較佳具體實例中，一場發射顯示裝置包含第一電絕緣 板、、一含銀材料之陰極形成在第一電絕緣板上、—高電阻 材料層形成在陰極上，一奈米管發射極層位於該電阻材料 層上，該奈米管發射極層由碳、鑽石及類鑽石材料形成； # :極電阻層及毫微管發射極層形成一發射極堆疊，由 ，緣^隔與相鄰發射極堆疊相互絕緣，一介電質材料戶 之頂ί蓋！it射極堆疊，—閘門電極位於介電質材料； 埏，及一陽極位於閘電極上之第二電絕緣板上。 在场發射顯示裝罟φ，哲^ 絕緣板為一螢Hi 絕緣板為-玻璃& ’第二電 電阻材料可玻璃板。陰極由一層銀勝所形成。 膠形成，包為含番i (Ru02)。奈米管發射極堆疊由碳 為溶劑黏合劑，比㈣％與8〇%間之碳’及其餘 約50%之溶劑黏/劍3重/百为比約5〇%之碳及重量百分比 比約50%之碳纖二，1不米管發射極層另包含有重量百分 微米間，並含重,碳膠’其直徑在约30毫微米與約50毫 在場發以比：之含溶劑黏合劑。 "〇與約100(微米）,=，發射極堆疊之厚度約10微米（以 絕緣阻隔（rib^邛/曰，且較佳為約20 與約40以m間。 似。絕緣阻隔部Λ人度大致與發射極堆疊之厚度相 多數發射極堆叠:ί二電質材料例如玻璃原料所形成。在 由銀膠所形成。八二粗質材料包含玻璃粉及溶劑。閘電極 有約150 _之寬二電：材料垂直覆蓋多數發射極堆疊，具 約110 ，未由$雷^質材料層頂端t閑門電極之寬度 1 '、材料層覆蓋之毫微管發射極層，具 第9頁 472284 五、發明說明（7) 有約120/zm之寬度，及約uoem之長度。 本發明另包含利用一厚膜印刷技術製造場發射顯示裝 之方法，其步驟包含，提供一第一電絕緣板；網版印^一 導電層於第一電絕緣板，形成一陰極；網版印刷—屛古 阻材料於第一導電層電樞頂端；網版印刷一奈米管^ = 材料於高電阻材料層，形成相間隔具有間隙之多數發射極 堆疊；網版印刷一絕緣材料層於間隙中，形成絕緣凸肋 份；網版印刷一介電材料層於條狀阻隔層上，覆蓋及 ^ 與相間隔之多數發射極堆疊相交；網版印刷—導電 =介電質材料層頂端之延伸條上，形成閘電極；及固定二 陽極於第二電絕緣板上，第二電絕緣板覆蓋導電材料層。 於利用厚膜印刷技術製造場發射顯示裝置之方法中: :板為一透明之玻璃板。該方法另包含一步驟 :刷導電銀膠）於一玻璃板上，以形成—陰極。該J ^另包含一步驟以網版印刷一層二氧化釕（Ru〇2)於第— ，絕緣板，當做電阻層材料。該方法另包含—步驟 ㈣之破及含溶劑黏合劑之聚料形成 不赤官發射極材料。 利用一厚膜印刷技術製造場發射顯示裝置之方法，另 ΐ: m量百分比約5〇%之碳纖維，其直徑約30與5〇 極重量百分比約50%之含溶劑黏合劑形成奈 二：材，枓。該方法另包含一步驟以形成約2〇 ^與 以πΓ絕緣之Λ厚度之發射極堆疊。該方法另包含一步驟 4成絕緣凸肋之厚度大致與發射極堆Page 8 472284 V. Description of the invention (6) In a preferred embodiment, a field emission display device includes a first electrically insulating plate, a cathode containing a silver material formed on the first electrically insulating plate, and a layer of high-resistance material. Formed on the cathode, a nano tube emitter layer is located on the resistive material layer, and the nano tube emitter layer is formed of carbon, diamond, and diamond-like materials; #: the pole resistance layer and the nanotube emitter layer form a The emitter stack is insulated from adjacent emitter stacks by a dielectric material. It emitter stack, the gate electrode is located on the dielectric material; 埏, and an anode is located on the second electrically insulating plate on the gate electrode. The field emission display device is φ, and the insulation board is a fluorescent Hi insulation board is -glass & 'the second electrically resistive material may be a glass board. The cathode is formed by a layer of silver. Glue is formed and the package is Fanfan (Ru02). Nano tube emitter stack is made of carbon as a solvent binder, with a ratio of ㈣% to 80% of carbon 'and about 50% of the solvent viscosity / sword 3 weight / 100% carbon and weight percentage ratio Approximately 50% of the carbon fiber II, 1 meter tube emitter layer also contains weight percent micron, and contains weight, the carbon glue's diameter is about 30nm and about 50mm in the presence of the ratio: solvent-containing Adhesive. " 〇 and about 100 (micrometers), =, the thickness of the emitter stack is about 10 micrometers (with insulation barrier (rib ^ / /, and preferably between about 20 and about 40 by m.). Similar. Insulation barrier Λ The degree of humanity is roughly the same as the thickness of the emitter stack. Most emitter stacks are formed: 二 Electrical materials such as glass raw materials. Formed by silver glue. 82 coarse materials include glass powder and solvents. The gate electrode has about 150 _ The width of the second electric power: the material vertically covers most of the emitter stacks, with about 110, not covered by the top layer of the material layer, the width of the gate electrode 1 ', the nanometer emitter layer covered by the material layer, with page 9 472284 V. Description of the invention (7) It has a width of about 120 / zm and a length of about uoem. The invention also includes a method for manufacturing a field emission display device using a thick film printing technology, the steps of which include providing a first electrical insulation Screen printing ^ a conductive layer on the first electrically insulating plate to form a cathode; screen printing-ancient resistance material on the top of the first conductive layer armature; screen printing a nano tube ^ = material in high resistance Material layers to form most emitter stacks with gaps between them; Screen printing an insulating material layer in the gap to form an insulating rib; screen printing a dielectric material layer on a strip barrier layer, covering and intersecting with most of the spaced emitter stacks; screen printing-conductive = The gate electrode is formed on the extension strip at the top of the dielectric material layer; and the two anodes are fixed on the second electrically insulating plate, and the second electrically insulating plate covers the conductive material layer. In the method: The plate is a transparent glass plate. The method further includes a step: brushing a conductive silver glue) on a glass plate to form a cathode. The J ^ further includes a step of printing a layer of ruthenium dioxide on a screen. (Ru〇2) In the first section, the insulating plate is used as the material of the resistance layer. The method further includes the step of breaking and the polymer containing the solvent binder to form a non-red emitter material. Using a thick film printing technology manufacturing site The method for emitting a display device further includes: a carbon fiber having an amount of about 50% by weight, a solvent-containing adhesive having a diameter of about 30 and a weight percentage of about 50% by 50% to form a nano-material: a material, and a method. The method further includes a Steps to form Approx. 2 0 ^ and emitter with Λ thickness insulated by πΓ. The method further includes a step 4 of which the thickness of the insulating rib is approximately the same as that of the emitter stack.

472284472284

用包含玻璃粉及溶密，丨夕^ H 端之介電質輪印刷多數發射極堆疊頂 有銀膠之閑門電極，另包含：步驟以形成具 A 次於螢光粉層板上形成該陽極。 顯特二，τ：之上述和其他目的、特徵、和優點能更明 作詳細說明如下舉本發明較佳實施例，並配合所附圖示’ 【較佳具體實例之詳細說明 本發明揭示一場發射顯示 料當做電子發射極，而不使 置之微尖端。本發明另有關 發射顯示裝置之製造方法， 刻圖案之習用方法。 裝置’使用一毫微管發射極材 用傳統用場發射顯示（FED)裝 一種利用厚膜印刷技術製造場 因而不須使用薄膜沈積及光蝕 _ 、明之新穎場發射顯示（FED )裝置較傳統用場發射顯 不（fed)裝置呈現多個主要優點。第―，製造此裝置僅需 —厚膜印刷技術完成，因而可以較低製造成本，且不需薄 膜沈積及光蝕刻方法之複雜步驟製造此裝置。第二，本發 明之新穎裝置利用一奈米管發射極材料係呈塗膠形式，因 而可利用低成本之網目印刷技術實施。第三，本發明之新 穎裝置利用一阻隔結構，以絕緣該奈米管發射極，此凸肋 、’.口構亦疋利用厚膜印刷技術所形成的。第四，利用網版印 刷技術製造本發明之新穎裝置並無尺寸限制。因此本發明 之新穎方法適合製造任何尺寸之顯示器，且無傳統用場發 射顯示（FED)製造方法之限制。Most of the emitters are stacked with a silver glue on top of the gate electrode using a dielectric wheel containing glass powder and a dense, H-side dielectric wheel. The method further includes the following steps: anode. Xiante II, τ: The above and other objects, features, and advantages can be more clearly described in detail as follows. The preferred embodiments of the present invention are given below, and in conjunction with the accompanying drawings. Emissive display materials act as electron emitters without placing them at the microtip. The present invention also relates to a method for manufacturing an emission display device and a conventional method for engraving a pattern. Device 'uses a nano tube emitter pole material and uses traditional field emission display (FED) to install a field using thick film printing technology so there is no need to use thin film deposition and photolithography The use of field emission display devices presents several major advantages. First, manufacturing the device requires only thick film printing technology, so it can be manufactured at a lower cost without the complicated steps of thin film deposition and photo-etching methods. Second, the novel device of the present invention utilizes a nanometer tube emitter material in the form of a glue, and thus can be implemented using low-cost screen printing technology. Third, the novel device of the present invention utilizes a barrier structure to insulate the emitter of the nano tube, and the raised ribs are formed using thick film printing technology. Fourth, there is no size limitation for manufacturing the novel device of the present invention by using screen printing technology. Therefore, the novel method of the present invention is suitable for manufacturing a display of any size, and there is no limitation of the traditional field emission display (FED) manufacturing method.

第11頁 472284 五、發明說明（9) 本發明利用碳、鑽石或類鑽 材料。奈米管直徑小於纖維之 範圍内’或較佳約3 〇與約5 0毫 先成長並斷裂成短長度，然後 成可網版印刷槳料。奈米管發 施加，且較薄膜沈積及光蝕刻 在典型之本發明新穎結構中 素，其於垂直方向互相重疊， 與藍區域中，與電子發射區高 以在奈米管發射極間達成電絕 在製造過程中，利用一厚膜 導電塗料’例如銀膠於一玻璃 塗層一電阻層及一奈米管發射 射極層包含以導電材料，例如 膠，所形成之奈米尖端，以當 印刷技術，在毫微管發射極堆 如玻璃原料以形成阻隔，並填 高度大致與奈米管發射極堆疊 射極層間，網版印刷一介電質 絕緣。電子場發射之場強所需 度所決定。 電子發射源由典型低場發射 石、類鑽石或碳之奈米管。此 混合’並可用於厚膜印刷之大 石破所製成之奈米管之新穎 直徑，即小於1 〇 〇毫微米之 微米間之範圍内。毫微管首 與含溶劑塗膠材料混合，形 射極材料可用厚膜印刷技術 方法具較低之成本。 ’閘電極及陰極構成一像 且在其間有絕緣。在紅、綠 度相同之絕緣阻隔部份，用 緣。 印刷技術以網目印刷一厚膜 基板上，以當做陰極。然後 極層於銀頂端，該奈米管發 石炭、鑽石或類鑽石碳之塗 做場電子發射源。利用厚膜 疊間，使用一介電質材料例 充此電絕緣層之間隙。阻隔 相同。在閘電極與奈米管發 材料例如玻璃原料，用以電 之電壓係由介電質材料層厚 特點之材料形成，例如：鑽 些導電材料適合與塗膠材料 置生產。在塗膠材料印刷於Page 11 472284 V. Description of the invention (9) The present invention uses carbon, diamond or diamond-like material. The diameter of the nano tube is smaller than the range of the fiber 'or preferably about 30 and about 50 millimeters, first grow and break into short lengths, and then form a screen-printable paddle. Nanotubes are applied and are thinner than thin film deposition and photo-etching in a typical novel structure of the present invention, which overlap each other in the vertical direction, are high in the blue region, and are electron-emitting regions to achieve electricity between the nanotube emitters. During the manufacturing process, a thick-film conductive coating, such as silver glue on a glass coating, a resistance layer, and a nano-tube emitter emitter layer, includes a nano-tip formed by a conductive material, such as glue, to In printing technology, a nano-tube emitter stack, such as glass material, is used to form a barrier, and the height is approximately the same as that of the nano-tube emitter stacked emitter layer, and a dielectric insulation is printed on the screen. Determined by the required field strength of the electron field emission. The electron emission source is a typical low-field emission stone, diamond-like or carbon nanotube. This hybrid 'can be used for thick film printing of nanometer tubes made of dashi, the new diameter of which is in the range of less than 1000 nanometers. Nanotube heads are mixed with solvent-containing coating materials. The emitter materials can be printed with thick film technology at a lower cost. 'The gate electrode and the cathode form an image with insulation therebetween. Use the edge at the insulation barrier with the same red and green levels. Printing technology screen prints a thick film substrate as a cathode. The polar layer is then on top of the silver, and the nanotube emits carbon, diamond, or diamond-like carbon coating as a field electron emission source. Using a thick film stack, a dielectric material is used as an example to fill the gap between the electrically insulating layers. Blocking is the same. Materials such as glass materials are used for the gate electrode and the nano tube. The voltage used to generate electricity is formed by materials with a thick layer of dielectric material. For example, some conductive materials are suitable for production with glue-coated materials. Printed on gummed material

472284 五、發明說明（10) 二= 2 = 裝置之基板後，烤硬該裝置，因此發射 提H ίI尖端暴露於奈米管發射極層表面。因此本發明 、生1半it製造場發射顯示（FED)裝置之方法’並提供製 k不未官發射極材料之方法。 署i i二圖2，顯不形成本發明之新穎場發射顯示（FED)裝 一=0材料之沈積之立體視圖。在最初製程中，首先提供 :絕，板（40 )，例如一玻璃才反。然後利用一厚膜印刷 Μ ^ ，=版印刷一導電材料層（44 )，例如銀膠，於玻璃 (〇)之頂表面（42)，銀膠延伸條橫向印於玻璃板 上，以形成場發射顯示（FED)裝置之陰極。此銀膠 ，合適厚度為約5/zm與約2〇,之間，較佳為1〇_。網版 壯使用一網板（SCreen)具有多數陰極及於場發射顯 : 置上形成之多數像素之®I案。根據陰極之寬 度，約11 0 // m，可容易製造此光罩或網板。 接著，以網目印刷電阻層材料例如二氧化釕（Ru〇2)之 延伸條於銀膠所形成之陰極（44)上。電阻層（46)之厚 度係重要的，在陰極與電阻層（46 )頂端所沈積奈来管發 射層間，提供電子限流作用。 本發明裝置之其中一新穎特點，奈米管發射極層（48 ),’係利用網版印刷技術沈積於高電阻層（4 6 )頂端。兴 米管發射極層以合適之碳奈求管、鑽石奈米管或類鑽石^ 米管構成，並斷裂且與含溶劑塗膠混合成合適稠度以供厚 膜印刷技術使用。亦可使用任何其他適合的毫微管材料， 只要具有一合適直徑，例如約30與約5〇毫微米間之直徑。472284 V. Description of the invention (10) 2 = 2 = After the substrate of the device, the device is baked, so the tip of the emitter is exposed to the surface of the emitter layer of the nanotube. Therefore, the present invention provides a method for manufacturing a field emission display (FED) device 'and provides a method for manufacturing a kunweiguan emitter material. Fig. 2 shows a three-dimensional view of the deposition of the novel field emission display (FED) loaded with a = 0 material of the present invention. In the initial process, the first is provided: the plate (40), for example, a glass is reversed. A thick film is then used to print M ^, a plate is used to print a conductive material layer (44), such as silver glue, on the top surface (42) of glass (0), and the silver glue extension strip is printed laterally on the glass plate to form a field. Cathode of emission display (FED) device. The suitable thickness of the silver glue is between about 5 / zm and about 20, and preferably about 10 mm. The screen version uses a screen board (SCreen) with the majority of the cathode and the field emission display: the majority of the pixels formed on the case. Depending on the width of the cathode, about 11 0 // m, this photomask or screen can be easily manufactured. Next, an extension of a resistive layer material such as ruthenium dioxide (RuO2) is printed on the cathode (44) formed by a silver paste. The thickness of the resistive layer (46) is important, providing a current-limiting effect of electrons between the cathode and the emitting layer of the nanotube deposited on top of the resistive layer (46). One of the novel features of the device of the present invention is that the emitter layer (48) of the nano tube is deposited on the top of the high-resistance layer (46) using screen printing technology. The emitter layer of the X-ray tube is composed of a suitable carbon nano tube, diamond nano tube or diamond-like tube, and it is broken and mixed with solvent-containing glue to a suitable consistency for thick film printing technology. Any other suitable nanotube material may be used as long as it has a suitable diameter, such as a diameter between about 30 and about 50 nanometers.

472284 五、發明說明（11) 5月庄意，奈米管係呈柱狀，正常小於一纖維之直徑。約3 0 伏特與約5 0伏特間之小工作電壓，被使用以激發奈米管發 射極材料以發射電子。因此明顯小於傳統用場發射顯示 (FED)裝置操作微尖端需大於丨〇〇伏特之工作電壓。 在奈米管發射極層網目印刷於場發射顯示（FED)基板 後，即於玻璃板（4〇 )上，烘硬該層以逐出塗膠所含之剩 餘溶劑’並硬化材料。奈米管發射極材料正常包含奈米管 ^重量百分比約20%與約80%之間，其餘為含溶劑黏合劑: 車^佳地，毫微管塗膠包含重量百分比約50%之奈米管及重 量百分比約5 0之含溶劑黏合劑。在烘硬過程後，奈米管之 2螭或尖點凸出於奈米管層表面，以當做電子發射源，使 能製造本發明之新穎裝置。陰極（44 )、高電阻層（、46 ) ，毫微管發射極材料層（48 )形成一發射極堆疊5〇 )。 ίΪΪΐ”（5°)於玻璃板（4〇)上形成，以定距離 也、向間隔，其間留下約11 0 y m之間隙。 於本發明新穎方法之下一步驟，係利用一網目印刷方 ί門材料填充間隙，因此在所有多數發射極堆叠 ’間隙填充後，獲得一光滑表面。.多數阻隔部份（6〇)於 =形成。形成阻隔部份（6〇 )之介電質材料可為任人 、絕緣材料，例如玻璃原料或玻璃粉。 ° 沿著玻璃板（4 0 )縱向，利用一網目印刷方法 2條狀之介電質材料，以絕緣發射極堆疊（5〇 ) ^介電質 料層（56)垂直重疊多數發射極堆疊（5〇)。如 圖4之平面圖所示。介電質材料層（56)之適合寬度約15〇472284 V. Description of the invention (11) In May, the solemn tube system is columnar, which is normally smaller than the diameter of a fiber. A small operating voltage between about 30 volts and about 50 volts is used to excite the emitter material of a nanotube to emit electrons. Therefore, it is significantly smaller than the operating voltage of traditional field emission display (FED) devices to operate microtips greater than 1000 volts. After the nano-tube emitter layer is mesh-printed on a field emission display (FED) substrate, that is, on a glass plate (40), the layer is hardened to expel the remaining solvent 'contained in the glue and harden the material. Nano tube emitter materials normally contain between about 20% and about 80% of the weight of the nanotube, and the rest are solvent-containing adhesives: Che ^ Jiadi, the coating of the nanotube contains about 50% by weight of the nanometer Tube and solvent-containing adhesive with a weight percentage of about 50. After the hardening process, the 2 螭 or sharp point of the nano tube protrudes from the surface of the nano tube layer, and serves as an electron emission source, so that the novel device of the present invention can be manufactured. The cathode (44), the high-resistance layer (, 46), and the nanotube emitter material layer (48) form an emitter stack 50). "ΪΪΐ" (5 °) is formed on a glass plate (40), with a fixed distance and a space, leaving a gap of about 110 mm. In the next step of the novel method of the present invention, a mesh printing method is used. The gate material fills the gap, so after all the majority of the emitters are stacked, the gap is filled to obtain a smooth surface. The majority of the barrier portion (60) is formed in =. The dielectric material forming the barrier portion (60) can be For any person, insulating material, such as glass raw material or glass powder. ° Along the longitudinal direction of the glass plate (40), a strip of dielectric material using a mesh printing method is used to stack the insulating emitters (50). The electrical material layer (56) vertically overlaps most of the emitter stacks (50). As shown in the plan view of Fig. 4. The suitable width of the dielectric material layer (56) is about 15%.

472284 五、發明說明（12) # m ’如圖4所示。 窄材料（62)於介電質材料（56)頂端沈積較 ..2 r α如圖4所示約11 〇从m之寬度。閘電極材料可 絪版&7二膜印刷技術以高導電之金屬材料網目印刷。適合 ’’ 1方法之金屬材料為銀膠，包含重量百分比至少50 圖3所示，固定一陽極（66)，或-螢光粉 替#势二ΐ新穎之場發射顯示（FED)裝置（70)頂端，該 /糸於玻璃板上沈積磷所形成。利用多數垂直安裝 #未顯不）固定陽極，形成本發明場發射顯示、 、置之真空室。電子（72 )自發射極堆疊（50 )發 門電極（62)及陽極（66)，達成-場發射顯 不（FED)裝置之顯示功能。 只 圖4係-本發明之場發射顯示（FED)裝置（7〇)之一平面 示一像素。每—發射極堆疊(50)係為紅（R)， 2 及藍_ (β)。縱向配置之介電質層（56)阻斷電子 :、。亦顯示阻隔部份（60)提供發射極堆疊（50)間之 ’’邑，圖4所示之像素尺寸為約660 X 660 之方形。 發，之新穎裝置及利用厚膜印刷技術製造此裝置之方 罢^ ΐ則文並配合圖2至圖4中充分說明。本發明之新穎裝 β ^ ^使用低成本之厚膜印刷技術，取代習用薄膜沈積 J先蝕刻方法。本發明另使用奈求管，形成一電子發射 :他Ϊ代使用微尖端。本發明另提供阻隔部份，做為發射 β間之絕緣，並提供利用一網版印刷技術形成阻隔部 刀之方法。因為厚膜印刷技術可以印刷非常大的網版，本472284 V. Description of the invention (12) # m ′ is shown in FIG. 4. The narrow material (62) is deposited on the top of the dielectric material (56) with a width of about 11 mm from m. As shown in FIG. 4. The gate electrode material can be stenciled & 7 two-film printing technology with high conductivity metal material mesh printing. The metal material suitable for `` 1 method is silver glue, which contains at least 50% by weight. As shown in Figure 3, an anode (66) is fixed, or -fluorescent powder replaces # 势 二 ΐ a novel field emission display (FED) device (70 ) At the top, which is formed by depositing phosphorus on a glass plate. The anode is fixed by using most vertical installations (not shown) to form a vacuum chamber for the field emission display of the present invention. The electrons (72) are stacked (50) from the emitter electrode (62) and the anode (66) to achieve the display function of a field emission display (FED) device. Only Fig. 4 is a pixel showing a plane of a field emission display (FED) device (70) of the present invention. Each-emitter stack (50) is red (R), 2 and blue_ (β). A vertically arranged dielectric layer (56) blocks electrons:,. It is also shown that the blocking portion (60) provides a '' 'between the emitter stacks (50), and the pixel size shown in FIG. 4 is about 660 X 660 square. The novel device and the method of manufacturing this device using thick film printing technology are explained in full text in conjunction with Figures 2 to 4. The novel device β ^ ^ of the present invention uses a low-cost thick film printing technology instead of the conventional thin film deposition J first etching method. In the present invention, a nano tube is used to form an electron emission: other generations use a microtip. The present invention further provides a blocking portion as an insulation between the emission β, and provides a method for forming the blocking portion knife by a screen printing technology. Because thick film printing technology can print very large screens, this

第15頁 472284 五、發明說明（13) 發明新穎方法製造場發射顯示（fed)裝置並無尺寸限制 雖然本發明係以說明方式詳細揭示，但應暸解所° 術語係用以說明而用以非限制本發明之範圍。 用乙 此外帛然本發明已以前述較佳實施例揭# 用以定本發明，任何熟習此技藝者，在不脫離才;路非 精神和範圍内，當可作各種之更動與修ί =發明之 保護範圍當視後附之申請專利範圍所界定者為準。發明之 第16頁 472284 圖式簡單說明 【附圖之簡單說明】 圖1A係一傳統用利用微尖端之場發射 面圖。 ’、 之玫大剖 圖1 B係圖1 A所示之傳統用場發射顯示# n小展置之放太 圖，另包含一陽極及侧壁板形成一直办 v 4面 丹二封裝環境。 圖1 C係圖1 B所示之傳統用場發射顯示f 面圖’其顯示微尖端之結構。 ，、、置之局°卩放大剖 圖2係本發明之場發射顯示裝置之立體 層、電阻層、奈米管發射極層、介電 ·4不陰極 圖3係圖2所示之本發明之場發射顯署:☆開電極° 其頂端有一螢光體廣板陽極。^裝置之立體視圖， 圖4係圖2所示之本發明之場發射顯示裝置之平面 顯示一像素（pixel)。 ’ 【圖號說明】 10 場發射顯示裝置 12 非晶矽電阻層 14 玻璃基板 16 絕緣層 18 金屬閘極層 20 微尖端 22 陰極結構 26 電子 28 陽極 30 場發射顯示結構 32 螢光粉 34 鋼—鍚-氧化層（ITO) 36 玻璃板 40 電絕緣板 42 頂表面 44 陰極 46 電阻層 48 奈米管發射極層Page 15 472284 V. Description of the invention (13) Innovative method for manufacturing field emission display (fed) devices has no size limitation. Although the present invention is disclosed in detail by way of illustration, it should be understood that all terms are used for explanation and not Limit the scope of the invention. Use B. In addition, the present invention has been disclosed in the aforementioned preferred embodiments. # Used to determine the invention, anyone skilled in this art will not depart from it; within the spirit and scope of Lu Fei, various changes and modifications can be made. = Invention The scope of protection shall be determined by the scope of the attached patent application. Page 16 of the Invention 472284 Brief Description of Drawings [Simplified Description of Drawings] FIG. 1A is a conventional field emission surface view using a microtip. The large section of FIG. 1B is a conventional field emission display shown in FIG. 1A. The n is a small layout, and it also includes an anode and a side wall to form a four-dimensional package environment. Fig. 1C is a conventional field emission display f-plane image shown in Fig. 1B, which shows the structure of the microtip. The enlarged section is a three-dimensional layer, a resistance layer, a nanometer emitter layer, and a dielectric · 4 cathode of the field emission display device of the present invention. Fig. 3 is the present invention shown in Fig. 2 Field emission display: ☆ open electrode ° There is a phosphor wide plate anode at the top. ^ A perspective view of the device, FIG. 4 is a plane display of a pixel of the field emission display device of the present invention shown in FIG. 2. '[Illustration of drawing number] 10 Field emission display device 12 Amorphous silicon resistance layer 14 Glass substrate 16 Insulation layer 18 Metal gate layer 20 Microtip 22 Cathode structure 26 Electron 28 Anode 30 Field emission display structure 32 Fluorescent powder 34 Steel— Thorium oxide layer (ITO) 36 glass plate 40 electrical insulation plate 42 top surface 44 cathode 46 resistance layer 48 nanometer emitter layer

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Claims (1)

472284 、申請專利範固 1, 一種場發射顯示裝置包含： 一第—電絕緣板； 二成於該絕緣板上，該陰極包含金屬材料； 电阻材料層形成於該陰極上； 極：=發：極層形成於該高電阻層上，該毫微管發電 :、鑽石及類鑽石所構成族群之材料，該陰極 緣，部份與相鄰之發射極堆叠絕緣；射極堆邊，*-絕 二介電質材料層垂直位在多數發射極堆疊上； =，電極位在該介電質材料層之頂端上，及: 一陽極形成於一第二電絕緣板上並位在該閘門電極上。 t 據往申請專利範圍第1項之場發射顯示裝置，其中哕第 玻璃板。、 板，且該第二電絕緣板係一螢光佈層 5米管根專：t第1項之場發射顯示裝置，其中該奈 該陰 碳膠所形成’包含重量百分 比20%與472284, applied for patent Fangu 1, a field emission display device comprising: a first-electrical insulation plate; 20% on the insulation plate, the cathode contains a metal material; a layer of resistive material is formed on the cathode; pole: = hair: An electrode layer is formed on the high-resistance layer. The nanotubes generate electricity: materials of the group consisting of diamonds and diamond-like diamonds. The cathode edge is partially insulated from the adjacent emitter stacks. Two dielectric material layers are vertically positioned on most emitter stacks; =, an electrode is positioned on top of the dielectric material layer, and: an anode is formed on a second electrically insulating plate and is positioned on the gate electrode . t According to the field emission display device of the scope of patent application, the first glass plate. , And the second electrically insulating plate is a fluorescent cloth layer of 5 meters tube. Specially: the field emission display device of item 1, wherein the Nylon formed by the carbon paste contains 20% by weight and 第19頁 472284 六、申請專利範圍 8 0丨間之碳，及其餘為—含溶劑黏合劑。 6.根據申凊專利範圍第丨項之場發射顯示裝置，其中該奈 米管發射極層係由一碳牒 ，π，句人备 八 炭〃、重$百分比50之含溶劑黏合劑。 7 · 根據申請專利範图笛Ί κ ,θ 4+ ηκ 半簪鉻第項之場發射顯示裝置，其中該奈 磁Μ給百女—on炭暴所形成包含重量百分比50%之 、、、'、 在毫微米與5 0毫微米間之直徑，盘重量*§· 分比50%之含溶劑黏合劑。 直仨八重堇 ^根據申請專利範圍第j，之場發射 射堆具有1〇_與10。心間之厚度。u其中該發 9射堆根Λ申.請上利範圍第1項之場發射顯示襄置，其中該發 射隹”有較佳20从1η與4〇 間之一厚度。 1 〇.根據申請專利範圍項之 絕緣阻隔部份之厚度與該發射極堆#之貝厚丁度裝大置致相亥 :緣=以：範；發射顯示裂置，其中該 r刀係由—介電質材料所形成。 12·根據申請專利範圍第1項之場發射顯示褒置，其中該Page 19 472284 VI. The scope of patent application for carbon in the range of 80 and the rest is solvent-containing adhesive. 6. The field emission display device according to item 丨 of the patent scope of the application, wherein the emitter layer of the nanotube is composed of a carbon hafnium, π, a carbon dioxide, and a solvent-containing adhesive with a weight of 50%. 7. The field emission display device according to the patent application Fantu Di κ, θ 4+ ηκ Half 簪 Chromium Item, wherein the nanomagnetic M is formed to a hundred female-on carbon storm containing 50% by weight, Solvent-containing adhesive with a diameter between nanometers and 50 nanometers and a disk weight of 50% * § ·. Mullion octave ^ According to the scope of application for patent j, the field emission reactor has 10_ and 10. The thickness of the heart. u Among them, the firing of 9 firing roots is applied. The field firing display of item 1 in the above range is recommended, in which the firing "" has a thickness of preferably 20 between 1η and 40. 1 〇 According to the patent application The thickness of the insulation barrier portion of the range item is the same as the thickness of the emitter stack #. The edge = to: range; the emission shows cracking, where the r blade is formed of a dielectric material. 12. Field emission display setup according to item 1 of the scope of patent application, where 第20頁 472284 六 、申請專利範圍 介電質材料位在該多數發射極堆 溶劑。 包含一 破璃粉及 13.根據申請專利範圍第1項之場發射_ 閘電極係由銀（Ag)膠所形成。射‘，、員示裝置，其中該 ΐ據申請專利範圍第1項之場發射顯示据 介電質材料垂直位在具有150心之寬度’、/置，其中該 上’該閘門電極位在該介電質材料層：二f發射極堆疊 =之寬度，且該毫微管發射極層不由該 ’具有110 蓋’具有120“m之寬度及110_之長度。1電質材料層覆 :含；=厚膜印刷技術製造場發射顯示裝置之方法， 提供一第一電絕、後杯. = —導電板在該第一電絕緣板上，形成-陰極; 網版印刷一向電阻材料層在該第一電絕緣板之頂端； 2版印刷一毫微管材料在該高電阻材料層上，形成多數 以定距離相隔之發射極堆疊，在其間具有間隙； 網版印刷一絕緣材料層於該間隙中，形成絕緣阻隔部 網版印刷一絕緣材料層於延伸條中，覆蓋且垂直相交該 多數以定距離相隔之發射極堆疊； 網版印刷一導電材料層在該延伸條中，在該層之介電質Page 20 472284 VI. Scope of patent application The dielectric material is located in the majority of the emitter stack solvent. Contains a broken glass powder and 13. Field emission according to item 1 of the scope of patent application_ The gate electrode is formed of silver (Ag) glue. '', Staff display device, where the field emission according to item 1 of the scope of patent application shows that the dielectric material is vertically positioned with a width of 150 cores, where the upper 'the gate electrode is positioned at the Dielectric material layer: the width of two f emitter stacks =, and the nanotube emitter layer is not covered by the "having 110 cover" with a width of 120 "m and a length of 110_. 1 ; = Thick film printing method for manufacturing a field emission display device, providing a first electrical insulation and a rear cup. =-A conductive plate is formed on the first electrical insulation plate, forming a -cathode; The top of the first electrical insulation plate; 2 plates are printed with a nano tube material on the high-resistance material layer to form a plurality of emitter stacks separated by a certain distance with a gap therebetween; a screen is printed with an insulating material layer in the gap In the insulation barrier, a screen printing an insulating material layer is formed in the extension strip, covering and perpendicularly intersecting the plurality of emitters separated by a certain distance; screen printing a conductive material layer in the extension strip, in the layer. Dielectric 472234 六、申請專利範園 材料之頂端上形成間門電極；及 固定一形成在一第二電絕緣板上之陽極，其位於該導電 材料層上。 16. 根據申請專利範圍第1 5項之利用厚膜印刷技術製造碭 發射顯示裝置之方法’其中該第一電絕緣板係一實質透明 之玻璃板。 17. 根據申請專利範圍第1 5項之利用厚膜印刷技術製造磁 發射顯示裝置之方法，另包含一步驟利用一銀（Ag )膠網 版印刷該導電板於一玻璃板上形成該陰極。 1 8.根據申請專利範圍第1 5項之利用厚膜印刷技術製造殤 發射顯示裝置之方法，另包含一步驟以網目印刷一層 &gt; 氧 化釕（Ru02 )於該第一電絕緣板之頂端上，當做該電陣 層0 碭 19.根據申請專利範圍第丨5項之利用厚膜印刷技術製造 =射顯不裝置之方法，其中該奈米管發射極層包含重耋 分比20與8〇間之碳及其餘為一含溶劑黏合劑。 2〇·根據申請專利範圍第1 5項之利用厚膜印刷技術製造磁 ，射顯不裴置之方法，其中該奈米管發射極層包含重耋育 分比50之碳纖維及具有30毫微米與50毫微米間之直徑及爹472234 6. A gate electrode is formed on the top of the patent application material; and an anode formed on a second electrically insulating plate is fixed on the conductive material layer. 16. A method of manufacturing a 砀 emissive display device using thick film printing technology according to item 15 of the scope of the patent application, wherein the first electrically insulating plate is a substantially transparent glass plate. 17. The method for manufacturing a magnetic emission display device using thick film printing technology according to item 15 of the scope of patent application, further comprising a step of printing the conductive plate on a glass plate using a silver (Ag) offset screen to form the cathode. 1 8. The method for manufacturing a plutonium emission display device using thick film printing technology according to item 15 of the scope of patent application, further comprising a step of printing a layer with a mesh &gt; ruthenium oxide (Ru02) on the top of the first electrically insulating plate As the electrical array layer 0 砀 19. According to the method of applying for patent application No. 丨 5 manufacturing method using thick film printing = radio display device, wherein the nano tube emitter layer contains a weight ratio of 20 and 80. Between the carbon and the rest is a solvent-containing adhesive. 20. According to the method of manufacturing patented magnetic field using thick film printing technology according to item 15 of the patent application, the method of producing a magnetic film by using a thick film, wherein the emitter layer of the nano tube includes carbon fiber with a weight ratio of 50 and a thickness of 30 nm. And 50nm diameter and dad 472284 六、申請專利範圍 量百分比5 0之含溶劑黏合劑。 21.根據申請專利範If)當1 ^馆夕立，03广 發射顯+ # ¥ &gt; +圍第1 5員之利用厚膜印刷技術製造場 發射顯不裝置之方法，其中該發射 &quot;πι與40以m間。 且〈王口I厚度鈞乙u ϊ射:ΓΐΠί!範圍第15項之利用厚膜印刷技術製造場 該厂:;工該絕緣阻隔部份之厚度實質與 :射利用厚臈印刷技術製造場 材料。 法，其中延伸條包含一玻璃粉及一溶劑 ΐ.射ί ΐ! ϊ專利範圍第15項之利用厚膜印刷技術製造場 極之步驟裝之方法，另包含-以銀（Ag )膠形成該開電 發射ΐ專利範圍第15項之利用厚膜印刷技術製造場 之步驟。 之方法，另包含在一螢光體板上形成該陽極472284 VI. Scope of patent application Solvent-containing adhesive with a percentage of 50%. 21. According to the application patent, if) when the museum is set up, the 03 broadcast launch display + # ¥ &gt; + the 15th member of the method of manufacturing display launch device using thick film printing technology, where the launch &quot; πι With 40 to m. And <Wangkou I thickness Jun Yi u ϊ shot: ΓΐΠί! The 15th scope of the manufacturing site using thick film printing technology The factory :; the thickness of the insulation barrier part is essentially the same as: shooting using the thick printing technology manufacturing material . Method, wherein the extension strip includes a glass frit and a solvent. Shooting 装! ΪThe method of manufacturing field electrodes using thick film printing technology in the 15th patent scope, further comprising-forming the silver (Ag) glue KD launches the 15th step of the patent manufacturing process using thick film printing technology. A method further comprising forming the anode on a phosphor plate 第23頁Page 23