TW442856B - Tungsten silicide nitride as an electrode for tantalum pentoxide device - Google Patents
Tungsten silicide nitride as an electrode for tantalum pentoxide device Download PDFInfo
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- TW442856B TW442856B TW088121671A TW88121671A TW442856B TW 442856 B TW442856 B TW 442856B TW 088121671 A TW088121671 A TW 088121671A TW 88121671 A TW88121671 A TW 88121671A TW 442856 B TW442856 B TW 442856B
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- 229910021342 tungsten silicide Inorganic materials 0.000 title claims abstract description 16
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 title claims abstract description 11
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 title claims abstract description 11
- -1 Tungsten silicide nitride Chemical class 0.000 title abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 17
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims abstract description 13
- 230000000694 effects Effects 0.000 claims abstract description 4
- 239000002131 composite material Substances 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 239000012298 atmosphere Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 3
- 230000006837 decompression Effects 0.000 claims 2
- WIGAYVXYNSVZAV-UHFFFAOYSA-N ac1lavbc Chemical compound [W].[W] WIGAYVXYNSVZAV-UHFFFAOYSA-N 0.000 claims 1
- 238000005562 fading Methods 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 8
- 239000001301 oxygen Substances 0.000 abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 abstract description 8
- 238000011065 in-situ storage Methods 0.000 abstract description 4
- 239000003989 dielectric material Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 40
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 11
- 238000005240 physical vapour deposition Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 101150053844 APP1 gene Proteins 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101100189105 Homo sapiens PABPC4 gene Proteins 0.000 description 1
- 102100039424 Polyadenylate-binding protein 4 Human genes 0.000 description 1
- 229910008807 WSiN Inorganic materials 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000036284 oxygen consumption Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical group [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28097—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a metallic silicide
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
- H01L29/4975—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 being a silicide layer, e.g. TiSi2
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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Description
442856 五、發明說明（1) 發明範圍 本發明有關製造場效裝置之方法’更特別的是用以形成 作為矽MOS電晶體閘極電極之方法。 發明背景 因為1970年代場效電晶體工業開始之故，該閘極介電體 係二氧化矽，近來，則使用氧氮化矽。此等裝置之電極通 常為多辱矽。該多晶矽通常經雙重摻雜’而且其上具有氮 化鈦之摻雜劑擴散劑障礙層。近來，已提出以五氧化鈕代 替二氧化矽作為介電體。參考C. Hu，Elec. Dev_
Letters，Sept. 1 998，第34卜42頁’其以提及的方式併 « 入本文中。然而，於高溫處理時，隨著氧流失’發生五氧 化钽漏電流之情形增加。於氧化氣體（諸如02或N20)下退火 通常會使此降解作用逆轉。氮化鈦對於此種氧流失而言是 無效障礙，尤其是高於約600C，當氮化鈦開始於該溫度附 近下分解時尤甚。因此，使用五氧化钽作為該閘極電極時 ’高密度矽MOS電晶體技術中需要一種經改良閘極電極材 料。 發明嫵結 本發明人發展出一種經改良MOS閘極結構，其用於具有 五氧化钽或堆疊五氧化鈕介電體之矽MOS電晶體ic裝置。 該結構包括一種兩層之WSi與ffSiN複合物與一種三層之 WSi/WSiN/WSi複合物。該矽化鎢層提供該閘極結構導電 性，而該矽氮化鎢層係有效之氧擴散障礙層，於約8〇〇(^之 高溫下尤其如此。此閘極結構無氮化鈦之高溫問題。經改
442856 五、發明說明（2) 良結構之適用特色係其玎於單一沉積工具中以原位附近處 理所有複合層製得彼。 圊式簡述 參閱附圖與下列詳述可以最明白本發明。要強調的是， 根據本發明半導體工業常見實務’該圖之各圊並非一定比 例。相反地，為求清楚起見’可任意放大或縮小各圖之大 小。該囷中包括下列各圖： 圖1係代表性場效電晶體之閘極區示意圖，其顯示根據 本發明製得之複合物問極電極； 圖2係適用於本發明之物理蒸氣沉積（pVD)裝置示意圖； 及 、 圖3-5係形成圖1複合物閘極電極之處理順序示意圖。 詳述 參考圊1 ’顯示矽基板11具有場介電體12，而五氧化钽 閉極介電體13係由金屬有機化學蒸氣沉積作用（MOCVD)形 成。本發明較佳應用中’閘極介電層小於約丨〇毫微米，小 ，約6毫微米為佳。此係五氧化钽介電體之耗氧問題最為 嚴重的尺寸體系。因為不希望受限於任何理論，氧流失可 能產生低於化學計量之氧化鈕，所流失之氧留下h〇le載體 ，其可能減少五氧化鈕之絕緣性質，並增加漏電流情形。 特佳者係使用堆疊五氧化鈕介電系統，其中先於矽上形成 二氡化矽，然後形成五氧化鈕，然後形成另一層二氧化矽 ’各別厚度係約〇 . 8至約2毫微米，約3至約3 0毫微米，以 及約0. 5至約2毫微米。堆疊五氧化鈕系統係由p. K. R〇y等
第5頁 442856 五、發明說明（3) ~---- 人描述於 APP1· PhyS. Letts.，V〇l. 72，N。. 22，1998 年6月1日，第2835-3 7頁，以提及的方式將其全文併入 文中。 次一處理順序係形成複合物閘極電極丨6。以單 該閘極電極，表達在本發明較佳多層結構之事實中^ 彼此之間無明顯斷層，而整個複合物閘極電極實單 一處理操作製成。該複合物閘極電極包括矽 (wsum作為沉積於問極電極13上之狳擴散障:層'而 矽化鎢（WS i x)層1 8沉積於矽氮化鎢i D^除了較佳之 之外，可以沉積其他導電材料（諸如鋁與銅 x =導料代替形成複合物問極電極有等 層係以依序操作沉積，將於下文描述之。 以及約1 0至約 其中氮與矽含 其二具體實例中’首先將一 wsi黏著層沉積於堆疊五 =钽上，形成wsi/wsiN/wsi之三層複合物，其代表性一 厚度約1至約2毫微米，約5至約30毫微米， 1 2 0毫微米。 β該複合物堆疊體可沉積為官能梯度材料 量針對鎢而平滑地變化’層間無明確界限 物=例如習用RIE(反應電子钮刻作用）界定該複合 ☆電體13示於圖】，其係由源極沒極區上方 習用離子植入作用形成源極21與没極二 m適當位置’ *用複合物閘極電極作為植入r經由j 介電層進仃源極與汲極植入。就p_通道裝置而言，該摻^
442856 五、發明說明（4) 劑係硼，而就Π—通道裝置而言’該摻雜劑通常係神。某些 先前技藝方法中’在植入步称期間曝露出閘極電極’並將 雜質植入露出之蘭極電極’以提局問極導電性。然而’使 用本發明複合材料不需要而且可避免該閘極之摻雜作用。 形成源極/汲極之後’沉積該中間介電層’經由石版印 刷術在該中間介電層中開啟源極及極接觸窗口’使用鶴 或銘栓或間柱製造該閘極電極與源極/及極區之接點°然 後，沉積互連金屬層（未顯示出來）並形成圖型’並沉積 其他中間介電層（未顯示出來）。可以選擇性形成第三互連 層（未顯示出來）。源極與汲極概示於圖1中之24與25。最 後三系列步驟係IC技術中之標準步驟，此處未予圖示。 本發明内容中之方法的重要特徵係形成多層閘極電極。 參考圖2-5更詳細描述之。 形成多層閘極電極之較佳沉積方法係物理蒸氣沉積 (PVD )，即濺鍍作用。在減壓下，於一種惰性氣氛中自一 石夕化鎢濺靶濺鍍該矽化鎢層。於氮與氬氣中之反應性濺鍍 作用形成氮化鎢層。可單獨使用氮》在不破壞該PVD裝置 中之真空狀態下，該多層沉積步驟於同一沉積裝置中依序 進行為佳。為了描述，以此方式形成之層稱為"於原位"形 成。 PVD本紙係一種習用方法，而且其可於任何適用PVD裝置 進行。PVD裝置之示意圖示於圖2。真空室27罩住減^ 29 中f擇性平行光管31 (可自其底部或頂部將氣體導入該室 )，以及基板加熱器33，其支撐晶圓35。該圖中顯g
442856
五、發明說明（5) ’而且包括用以濺鍍金屬層之氩氣，以及用以反應 化物層之氩氣與氮氣
參考圖3 ’矽基板示為4 1，其上有五氧化钽閘極介電層 42形成。可使用電阻加熱接受器或加熱器或是以氩在後側 加熱（未顯示出來）提高晶圓溫度。此圖係M〇s裝置之閑極/ 通道區，因此不會顯現場效。其次沉積閘極電極層。T 參考圖4，將障礙層43濺鍍沉積於層43，將気添加於該 PVD反應器中’在PVD反應器中原位進行為佳。該障礙層^ WSixNy，而且其係避免前述自五氧化鈕區經由擴散作用產' 生氧流失之多層閘極電、極堆疊體中之關鍵梯度β較佳氣流 介於約5至約55 seem之間，氬氣載體介約4〇至約6〇 sccm 。層4 3之矽化物/氮化物材料通常係一種高電阻係數材料 。控制氤流速與該層形成之組成可以控制該材料之板電 阻。WSixNy障礙層之較佳組成範圍約5至約30% N，約4〇至 約6 0% Si，其餘為W。層44之較佳厚度在約50至約3⑽埃範 圍内。視氮流速而定’該氮化物可以沉積為氮化物模式或 非氮化物模式。本技藝中習知此等沉積模式。 於PVD反應器中，使用S i對W比率大於2之ws ix減起沉積 該矽化鎢層（示於圖5中之44)。較佳之Si/ff比大於約2 5， 最有效範圍約2.5至約2.9。在壓力範圍約2至約6毫托耳且 溫度範圍約25至約400 C之氬> 氣氣中沉積層44。層44之厚· 度範圍約1 0 0至約1 2 0 0埃，約6 0 0至約8 0 0埃為佳。 層43-44亦可由其他技術沉積，諸如CVD。例如，可使用 二氣梦烧或是類似先質形成石夕化物，遵添加提供氣來源之
442856 五、發明說明（6) 氣體形成碎氣化物。然後關閉該氮源形成最上層石夕化物層 ’完成該沉積作用β 熟知本技藝者會明白使用本發明多層閘極電極之優點。 矽氮化物與矽化物之多層結構構成一個可以調節應力之組 成分級堆疊體。此種結構容易製造之證據係：整個閘極電 極堆疊體可在單一室中沉積，毋需如同先前技藝般在分離 =具中沉積多晶S 1之成本。此外，製造該裝置期間對其進 仃熱處理時，WSixNy可作為氧自五氧化鈕擴散出來之優良 障礙物。先前技藝中，此種障礙物不存在多晶^或氮化鈦 堆疊體中。 熟知本技藝者會得到本發明各種其他改良。得自本說明 書特定教不之各種變異基本上係以發展本技藝之原則與其 相等物為基礎’其可適當地視為包括在本發明所述與申請 專利範圍之範圍内。
Claims (1)
- 442856 1跑種製造矽閘極場效電晶體裝置之方法，包括下列之 及 在石夕基板之經選擇之區域上形成五氧化钽介電層 世杖介電層上沉積多層閘極電極層’《中該多層閘極 ο 有矽I化鎢之複合層與一電導體。 Ζ ·根據申請專利 号列範圍第1項之方法，其中該電導體包括 尽化妈。 .專利圍第1項之方法’更包括下列之步驟 刻該多 層閘極 中之源 用多層 :以及 成與該 據申請 部分對 據申請 之曝露 源極與 據申請 連續步 該介電 一個多 蓋基板 使 沒極區 形 4.根 之露出 5·根 介電層 露出之 6_根 極係由 在 層閘極電 電極，留 極與汲極 閘極電極 源極與沒 專利範圍 該源極與 專利範圍 部分，以 没極區。 專利範圍 驟製得， 層上沉積 極層’在該介電層之閘極部分製造 下露出之介電層部分，此等部分覆 區； 作為光罩’將摻雜劑植入該源極與 極區之電接點。 第3項之方法，其中經由該介電層 淡極進行植入。 第3項之方法，其另外包括蝕刻掉 露出該源極與汲極’並將雜質植入 第1項之方法，其中該多層閘極電 其包括： 第一層，該第一層包括矽気化鎢；8^1442856 六、申請專利範圍 " 在該第一層上沉積第二層，該第二層包括矽化鎢電導 體，俾製得該多層閘極電極層；及 蝕刻該第一與第二層，以製得該多層閘極電極。 7，根據申請專利範圍第6項之方法，其中該多層閘極電 極之厚度在約50至約2 0 0毫微米範圍内。 8. 根據申請專利範圍第6項之方法，其中該第一層包括 約5至約30%之N，約40至約60%之Si，其餘為。 9. 根據申請專利範圍第6項之方法，其中第二層之矽化 鎢中’矽對鎢之比率大於約2.5。 10. 根據申請專利範闺第6項之方法，其中第二層之矽化 鎮中’矽對鎢之比率在約2. 5至約2.9範圍内。 11. 根據申請專利範圍第6項之方法，其中於一減壓裝置 中進行沉積步驟’其不會破壞該裝置中之減壓力。 1 2.根據申請專利範圍第1項之方法，其另外包括於沉積 矽氮化鎢層之前沉積矽化鎢層之步驟。 13. 根據申s奢專利範圍第1項之方法，其中該介電層之厚 度小於約1 0毫微米》 14. 根據申請專利範圍第1項之方法，其中該五氧化鈕層 介電層係一經堆疊之五氧化鈕。 1 5_ —種製造矽閘極場效電晶體裝置之方法，包括下列 之步驟： 在一矽基板上之經選擇裝置區域上形成堆疊五氧化 钽介電層； 在該經選擇裝置區域之介電層上沉積多層閘極電極第11頁 ----- 442856 六、申請專利範圍 層’其中該多層閘極電極包虹 ^ ^ >fh ^ m . 括包含石夕I化鎢之第一層與包 含矽化鎢之第一層的複合層； 1〜^ ^ ^ 蝕刻該閘極電極層’在 分上製造多層問極電極，露屮八置^區域之介電層閘極部 分覆蓋該基板之源極與没極：該介電層保留部>，此等部 使用多層閘極電極作為 與汲極，區；以及 罩將摻雜劑植入該源極 形成與該源極與汲極區之電接點 本發明另外特徵係於單一裝置中 多層閘極電極，此等步驟包括： 以連續步驟製造該 藉由在包含氮而且流速在約5至約55 sccm範圍内之 第一氣氛中之濺鍍作用，將第一層沉積於該介電體上； 自石夕化鶴減乾減鐘在第一層上’以沉積第二層， 其中該滅乾之石夕對鎢比率在約2 5至約2, 9範圍内，該濺鍍 作用係於主要由惰性氣體組成且流速在約4 〇至約6 〇 sc cm 之第二氣氛中進行’該介電層之溫度在約100至約400 °c範 圍内，及 蝕刻第一與第二層，製得多層閘極電極。 16. —種場效電晶體，其包括一個源極、一個閘極與一 個没極’其中該閘極包括包含五氧化组層、碎氮化钱層與 矽化鎢層之多層閘極電極。 1 7,根據申請專利範圍第1 6項之電晶體，其中該矽氮化 鎢層包括約5至約30%之N，約40至約60%之Si，其餘為W。 1 8.根據申請專利範圍第1 6項之電晶體’其中矽化鎢層Q\61\61814.PTD 第12頁 4428 5 6 六、申請專利範圍 中矽對鎢之比率大於約2. 5。 1 9.根據申請專利範圍第1 6項之電晶體，其中矽化鎢層 中矽對鎢之比率在約2. 5至約2 . 9範圍内。 2 0.根據申請專利範圍第1 6項之電晶體，其中該五氧化 组層係一經堆疊之五氧化組層。O:\6L\618I4.PTD 第13頁
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| US6493848B1 (en) * | 1999-11-03 | 2002-12-10 | Agere Systems Guardian Corp. | Rate equation method and apparatus for simulation of current in a MOS device |
| JP2003282873A (ja) * | 2002-03-22 | 2003-10-03 | Sony Corp | 半導体装置およびその製造方法 |
| US20040135218A1 (en) * | 2003-01-13 | 2004-07-15 | Zhizhang Chen | MOS transistor with high k gate dielectric |
| US20060091483A1 (en) * | 2004-11-02 | 2006-05-04 | Doczy Mark L | Method for making a semiconductor device with a high-k gate dielectric layer and a silicide gate electrode |
| US20060267113A1 (en) * | 2005-05-27 | 2006-11-30 | Tobin Philip J | Semiconductor device structure and method therefor |
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| KR19980040125A (ko) * | 1996-11-29 | 1998-08-17 | 문정환 | 반도체소자의 폴리사이드전극 형성방법 |
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