TW417223B - Apparatus and method for improved deposition of conformal liner films and plugs in high aspect ratio contacts - Google Patents
Apparatus and method for improved deposition of conformal liner films and plugs in high aspect ratio contacts Download PDFInfo
- Publication number
- TW417223B TW417223B TW086105261A TW86105261A TW417223B TW 417223 B TW417223 B TW 417223B TW 086105261 A TW086105261 A TW 086105261A TW 86105261 A TW86105261 A TW 86105261A TW 417223 B TW417223 B TW 417223B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- contacts
- collimator
- target
- deposition
- Prior art date
Links
- 230000008021 deposition Effects 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 86
- 238000000151 deposition Methods 0.000 claims abstract description 56
- 238000004544 sputter deposition Methods 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims abstract description 36
- 239000002245 particle Substances 0.000 claims description 37
- 150000002500 ions Chemical class 0.000 claims description 15
- 230000002079 cooperative effect Effects 0.000 claims description 8
- 235000015170 shellfish Nutrition 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 2
- 239000011148 porous material Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 8
- 239000010408 film Substances 0.000 description 24
- 235000012431 wafers Nutrition 0.000 description 21
- 238000012545 processing Methods 0.000 description 16
- 230000006870 function Effects 0.000 description 13
- 239000007789 gas Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 230000004907 flux Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 210000001503 joint Anatomy 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 210000004087 cornea Anatomy 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 206010001497 Agitation Diseases 0.000 description 1
- 241000252095 Congridae Species 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 210000003128 head Anatomy 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical group I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US63829096A | 1996-04-26 | 1996-04-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW417223B true TW417223B (en) | 2001-01-01 |
Family
ID=24559418
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086105261A TW417223B (en) | 1996-04-26 | 1997-04-23 | Apparatus and method for improved deposition of conformal liner films and plugs in high aspect ratio contacts |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP0843890A1 (ja) |
JP (1) | JPH11509049A (ja) |
KR (1) | KR19990028451A (ja) |
AU (1) | AU2400497A (ja) |
CA (1) | CA2225446A1 (ja) |
TW (1) | TW417223B (ja) |
WO (1) | WO1997041598A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002007198A2 (en) * | 2000-07-18 | 2002-01-24 | Applied Materials, Inc. | Deposition of low stress tantalum films |
JP2005082873A (ja) * | 2003-09-10 | 2005-03-31 | Applied Materials Inc | 膜形成方法 |
KR101603798B1 (ko) * | 2007-10-26 | 2016-03-15 | 에바텍 어드벤스드 테크놀로지스 아크티엔게젤샤프트 | 관통 실리콘 비아 금속화에 대한 고전력 마그네트론 스퍼터링의 적용 |
US20100096253A1 (en) * | 2008-10-22 | 2010-04-22 | Applied Materials, Inc | Pvd cu seed overhang re-sputtering with enhanced cu ionization |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4925542A (en) * | 1988-12-08 | 1990-05-15 | Trw Inc. | Plasma plating apparatus and method |
EP0735577A3 (en) * | 1994-12-14 | 1997-04-02 | Applied Materials Inc | Deposit process and apparatus |
-
1997
- 1997-04-15 KR KR1019970709767A patent/KR19990028451A/ko active IP Right Grant
- 1997-04-15 EP EP97919587A patent/EP0843890A1/en not_active Withdrawn
- 1997-04-15 JP JP9538711A patent/JPH11509049A/ja active Pending
- 1997-04-15 CA CA002225446A patent/CA2225446A1/en not_active Abandoned
- 1997-04-15 AU AU24004/97A patent/AU2400497A/en not_active Abandoned
- 1997-04-15 WO PCT/IB1997/000522 patent/WO1997041598A1/en not_active Application Discontinuation
- 1997-04-23 TW TW086105261A patent/TW417223B/zh active
Also Published As
Publication number | Publication date |
---|---|
WO1997041598A1 (en) | 1997-11-06 |
CA2225446A1 (en) | 1997-11-06 |
AU2400497A (en) | 1997-11-19 |
KR19990028451A (ko) | 1999-04-15 |
JPH11509049A (ja) | 1999-08-03 |
EP0843890A1 (en) | 1998-05-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent |