AU2400497A - Apparatus and method for improved deposition of conformal liner films and plugs in high aspect ratio contacts - Google Patents
Apparatus and method for improved deposition of conformal liner films and plugs in high aspect ratio contactsInfo
- Publication number
- AU2400497A AU2400497A AU24004/97A AU2400497A AU2400497A AU 2400497 A AU2400497 A AU 2400497A AU 24004/97 A AU24004/97 A AU 24004/97A AU 2400497 A AU2400497 A AU 2400497A AU 2400497 A AU2400497 A AU 2400497A
- Authority
- AU
- Australia
- Prior art keywords
- plugs
- aspect ratio
- high aspect
- improved deposition
- conformal liner
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000008021 deposition Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US63829096A | 1996-04-26 | 1996-04-26 | |
US08638290 | 1996-04-26 | ||
PCT/IB1997/000522 WO1997041598A1 (en) | 1996-04-26 | 1997-04-15 | Apparatus and method for improved deposition of conformal liner films and plugs in high aspect ratio contacts |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2400497A true AU2400497A (en) | 1997-11-19 |
Family
ID=24559418
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU24004/97A Abandoned AU2400497A (en) | 1996-04-26 | 1997-04-15 | Apparatus and method for improved deposition of conformal liner films and plugs in high aspect ratio contacts |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP0843890A1 (ja) |
JP (1) | JPH11509049A (ja) |
KR (1) | KR19990028451A (ja) |
AU (1) | AU2400497A (ja) |
CA (1) | CA2225446A1 (ja) |
TW (1) | TW417223B (ja) |
WO (1) | WO1997041598A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002007198A2 (en) * | 2000-07-18 | 2002-01-24 | Applied Materials, Inc. | Deposition of low stress tantalum films |
JP2005082873A (ja) * | 2003-09-10 | 2005-03-31 | Applied Materials Inc | 膜形成方法 |
KR101603798B1 (ko) * | 2007-10-26 | 2016-03-15 | 에바텍 어드벤스드 테크놀로지스 아크티엔게젤샤프트 | 관통 실리콘 비아 금속화에 대한 고전력 마그네트론 스퍼터링의 적용 |
US20100096253A1 (en) * | 2008-10-22 | 2010-04-22 | Applied Materials, Inc | Pvd cu seed overhang re-sputtering with enhanced cu ionization |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4925542A (en) * | 1988-12-08 | 1990-05-15 | Trw Inc. | Plasma plating apparatus and method |
EP0735577A3 (en) * | 1994-12-14 | 1997-04-02 | Applied Materials Inc | Deposit process and apparatus |
-
1997
- 1997-04-15 KR KR1019970709767A patent/KR19990028451A/ko active IP Right Grant
- 1997-04-15 EP EP97919587A patent/EP0843890A1/en not_active Withdrawn
- 1997-04-15 JP JP9538711A patent/JPH11509049A/ja active Pending
- 1997-04-15 CA CA002225446A patent/CA2225446A1/en not_active Abandoned
- 1997-04-15 AU AU24004/97A patent/AU2400497A/en not_active Abandoned
- 1997-04-15 WO PCT/IB1997/000522 patent/WO1997041598A1/en not_active Application Discontinuation
- 1997-04-23 TW TW086105261A patent/TW417223B/zh active
Also Published As
Publication number | Publication date |
---|---|
WO1997041598A1 (en) | 1997-11-06 |
CA2225446A1 (en) | 1997-11-06 |
KR19990028451A (ko) | 1999-04-15 |
JPH11509049A (ja) | 1999-08-03 |
TW417223B (en) | 2001-01-01 |
EP0843890A1 (en) | 1998-05-27 |
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