五、發明說明（ A7 B7 經濟部智慧財產局員工消费合作社印製 【技術領域】 本發明係關於使用微影(Lithography)技術來製造例如半 導體積體電路、攝像元件(CCD等）、液晶顯示器等之微元 件時，使用之光罩的製造方法及製造裝置，以及元件之製 造方法，特別是適合於製造電子束曝光裝置用之光罩時所 使用者。 【習知技術】 於製造半導體積體電路等之元件時，係使用將形成有 放大應形成之電路圖案4〜5倍程度之標線板(光罩)之圖案 ，透過縮小投影光學系，而縮小投影於晶圓等之被曝光基 板上之複製方式。此時所使用之光學式投影曝光裝置，其 一個照射之曝光範圍有20mm角程度，具有處理能力較高 之優點。 又，若要求形成比以光學式投影曝光裝置形成之圖案 更加微細之圖案時，係使用能更爲精密的對圖案進行曝光 之電子束曝光裝置。習知之電子束曝光裝置，其電子光學 系之像差多，與一個照射之曝光範圍爲角程度之光 學式投影曝光裝置相比，處理能力雖較低，但近年來，能 一次即對比較大面積之圖案(例如250#m角程度)進行總括 複製之電子束曝光裝置，揭示於Jpn. L Appl. Phys. Vol. 34 pp. 6658-6662, 6663-6671 及 pp. 6672-6678 (1995)，以及日本 特開平5-251317號公報等，而受到注目。 此等電子束曝光裝置，係將形成於由矽晶圓等之晶圓 (wafer)而成之光罩上的1mm角程度的圖案領域之圖案，以 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 先 閱 讀 背 事 再 填〜 1裝 頁 訂 線 五、發明說明（γ) 電子光學系縮小爲1/4程度後’總括複製於250#m角程度 之圖案領域。再者，由於通常製造之電子元件(積體電路) 的面積比25〇vm角大，因此亦有提案準備複數個25〇Vm 角程度之圖案，然後進行該等之畫面接續同時依序複製’ 進行對電子元件之1個塗層的電路圖案之曝光。 又，因電子束貫穿能力較低，以往於電子束曝光裝置 中，係使用將光罩圖案以微細的多數之開口圖案(缺孔）來 形成之鏤印光罩，或由原子序較小之元素而構成之能透過 電子束之非常薄的薄膜上，將電子束散射之薄膜以形成光 罩圖案之薄膜光罩等的光罩。此等光罩，因將電子束之透 過領域做爲開口或薄膜來形成而強度變弱，因此將各光罩 圖案形成於相隔既定間隔排列之圖案領域，使各圖案領域 之間隔部分不薄膜化而使之爲與原厚度一樣之領域，或將 補強材設置於各圖案領域之間隔部分。 以往，於製造此種電子束曝光裝置用之光罩時，如上 述文獻所揭示地，作爲其一例係於光罩基板，將形成各光 罩圖案之複數的圖案領域以相隔既定之間隔來排列，從形 成光罩圖案之面的相反面，蝕刻各圖案領域後形成薄膜， 將圖案領域間之間隔部分厚度維持原厚度。然後，於該光 罩基板之圖案形成面，塗布光阻劑後，以電子束描畫裝置 依序描畫圖案於各圖案領域，進一步的，經蝕刻等程序， 從光阻圖案形成光罩圖案。 如上所述，習知之光罩製造方法，係於光罩基板上， 以電子束描畫裝置直接描畫光罩圖案。但，因電子束插畫 4 A7 A7 經濟部智慧財產局員工消費合作社印製 __B7_____ 五、發明說明（}) 裝置處理能力較低，而有於光罩製造時花費較多時間之不 便。特別是於製造複數片相同之光罩時’所需之製造時間 將變的非常長。此外，描畫光罩圖案時，由圖案數據變換 至描畫數據時，亦可能產生數據變換上的錯誤。且於因數 據變換上的錯誤等而產生描畫誤差時，已作成之光罩須全 面地重做，因而在製造光罩之時間及製造成本等皆產生變 大之問題。 本發明有鑑於此，其目的在於提供，例如能以更短時 間且低成本地製造使用於電子束複製裝置之光罩製造方法 。此外，本發明之另一目的爲提供能實施該種光罩製造方 法之光罩的製造裝置。再者，本發明之另一目的’在於提 供使用該種光罩製造方法之元件的製造方法。 【發明之揭示】 本發明之光罩的製造方法，係一種具有於基板（1A ; 1B)上，在至少一次元方向，隔著既定之邊界區域（lAb ; lBb)來排列之既定形狀的複數之圖案領域（lAa ; IBa)，分 別於此複數之圖案領域形成複製用之圖案(P1A ; P1B)，其特 徵在於：藉描畫合倂該複數之圖案領域及該邊界區域並加 以放大之母圖案(Pra ; Prb)，以製作主光罩(RA ; RB)，將此 主光罩之該母圖案的縮小像複製於該基板上。 根據上述之本發明，將已擴大應複製之圖案的母圖案 ，例如藉描畫於玻璃基板上以作成主光罩。此時之描畫， 例如雖係使用電子束描畫裝置，但由於描畫之圖案較習知 者爲粗，因此描畫精度之要求較低，而能縮短描畫時間， 5 --I --------->'-t·-- c請先間讀背面之注意事項再ijr寫本頁) *sl· --線' 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 B7 _ 五、發明說明（W ) 同時產生數據交換錯誤等之槪率也較低。此外，於使用玻 璃基板時，由於缺陷檢査及缺陷修正技術等皆已確立，即 使產生描畫誤差，也能容易地修正描畫誤差。之後’將該 主光罩之縮小像，藉例如使用光學式之縮小投影曝光裝置 複製於晶圓等之基板上，減輕描畫誤差以製造光罩。此時 ，藉重複複製該主光罩，即能製造複數片之光罩，相較於 以電子束描畫裝置製造複數片之光罩，能大幅地縮短光罩 製造所須時間，大大地減低光罩製造成本。再者，當描畫 於主光罩(RA ; RB)之母圖案(PRA ; PRB)的倍率較大時，由於 所要求之描畫精度並不特別高，於主光罩之描畫，亦能使 用處理能力較高之雷射光束描畫裝置，藉此更能縮短光罩 之製造時間。 再者，爲了補償於該圖案領域內之圖案密度的非對稱 性所造成之該基板的應力變形，最好是修正該主光罩上之 該母圖案之部分形成位置。 再者，最好是使形成於該圖案領域內之圖案的一部分 之位置變化。 再者，最好是將該母圖案分割爲複數之部分母圖案， 分別形成此複數之部分母圖案以製作複數片之主光罩，同 時將此複數之部分母圖案的縮小像，一邊於該基板上進行 畫面連接一邊複製，並於該主光罩上修正該部分母圖案之 一部分的形成位置。 其次，本發明之光罩製造裝置，係一種具有於基板 (1E)上，在至少一次元方向，相隔既定之邊界區域來排列 6 本紙張尺度適用中國國家標準（CNS)A4規格<210 X 297公釐） ----------------飞·-I (請先閱讀背面之注意事項再填寫本頁)V. Description of the invention (A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs [Technical Field] The present invention relates to the use of Lithography technology to manufacture semiconductor integrated circuits, camera elements (CCD, etc.), liquid crystal displays, etc. In the case of micro-components, the manufacturing method and manufacturing device of the photomask, and the manufacturing method of the component are particularly suitable for users who manufacture photomasks for electron beam exposure devices. [Known Technology] For manufacturing semiconductor integrated circuits In the case of components such as circuits, a pattern in which a reticle (reticle) having a circuit pattern that is to be enlarged by 4 to 5 times is formed is used. By reducing the projection optical system, the exposed substrate projected on a wafer or the like is reduced. The above-mentioned copying method. The optical projection exposure device used at this time has an irradiation range of about 20mm, which has the advantage of high processing capacity. Moreover, if it is required to form a pattern than that formed by an optical projection exposure device For finer patterns, use an electron beam exposure device that can more precisely expose the pattern. Known electron beam exposure The device has many aberrations in the electronic optics system. Compared with an optical projection exposure device in which the exposure range of the irradiation is angular, although the processing power is lower, in recent years, it can compare a larger area of the pattern at one time (for example, 250 # m angle degree) An electron beam exposure device for collective reproduction is disclosed in Jpn. L Appl. Phys. Vol. 34 pp. 6658-6662, 6663-6671 and pp. 6672-6678 (1995), and Japanese Patent Application Laid-Open It was noticed by the publication No. 5-251317, etc. These electron beam exposure devices are patterns in a pattern area of about 1 mm angle formed on a mask made of a wafer such as a silicon wafer. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) Read the back first and then fill in ~ 1 binding line V. Description of the invention (γ) The electronic optics system is reduced to 1/4 degree. It is copied in the pattern area with an angle of 250 # m. In addition, since the area of electronic components (integrated circuits) usually manufactured is larger than an angle of 250mm, there are also proposals to prepare a plurality of patterns with an angle of 250Vm, and then Carry on the screen connection of these while repeating in order '' Exposes the circuit pattern of one coating layer of the electronic component. In addition, since the electron beam penetrating ability is low, conventionally, in the electron beam exposure apparatus, the opening pattern (the hole is formed with a fine number of mask patterns) has been used. ) To form a stencil mask, or a mask made of a relatively small atomic element that can transmit electron beams, and a film that scatters the electron beam to form a mask pattern. These photomasks are weak because they are formed by using the electron beam transmission area as an opening or a thin film. Therefore, each photomask pattern is formed in a pattern area arranged at a predetermined interval, so that the interval portion of each pattern area is not thin Make it into the same area as the original thickness, or install reinforcing material in the space between each pattern area. Conventionally, when manufacturing a photomask for such an electron beam exposure device, as disclosed in the above-mentioned document, as an example, it is attached to a photomask substrate, and a plurality of pattern fields forming each photomask pattern are arranged at predetermined intervals. From the opposite side of the surface on which the mask pattern is formed, each pattern region is etched to form a thin film, and the thickness of the space between the pattern regions is maintained at the original thickness. Then, on the pattern forming surface of the photomask substrate, a photoresist is applied, and then an electron beam drawing device is used to sequentially draw a pattern in each pattern area. Further, a photomask pattern is formed from the photoresist pattern through a process such as etching. As described above, the conventional mask manufacturing method is attached to a mask substrate, and the mask pattern is directly drawn by an electron beam drawing device. However, due to the illustration of electron beams 4 A7 A7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs __B7_____ V. Description of the Invention (}) The device has a low processing capacity, and it is inconvenient to spend more time in the manufacture of photomasks. In particular, when a plurality of identical masks are manufactured, the manufacturing time required becomes very long. In addition, when drawing a mask pattern, when converting from pattern data to drawing data, an error may occur in data conversion. In addition, when a drawing error occurs due to an error in data conversion, etc., the completed mask must be completely reworked, which causes a problem of increasing the time and cost of manufacturing the mask. The present invention has been made in view of this, and an object thereof is to provide, for example, a method for manufacturing a photomask for use in an electron beam copying device in a shorter time and at a lower cost. In addition, another object of the present invention is to provide a manufacturing apparatus for a photomask capable of implementing such a photomask manufacturing method. Furthermore, another object of the present invention is to provide a method for manufacturing a device using the photomask manufacturing method. [Disclosure of the invention] The manufacturing method of the photomask of the present invention is a complex shape having a predetermined shape arranged on a substrate (1A; 1B) in at least one-dimensional direction through a predetermined boundary area (1Ab; 1Bb). The pattern area (lAa; IBa) forms a pattern for reproduction (P1A; P1B) in the plurality of pattern areas, which is characterized by drawing a mother pattern combining the plurality of pattern areas and the boundary area and enlarging it. (Pra; Prb) to produce a main mask (RA; RB), and a reduced image of the mother pattern of the main mask is copied on the substrate. According to the present invention described above, the mother pattern of the pattern to be copied is enlarged, for example, by drawing on a glass substrate to form a main photomask. The drawing at this time, for example, uses an electron beam drawing device, but because the drawing pattern is thicker than the conventional one, the drawing accuracy is lower, and the drawing time can be shortened. 5 --I ------ --- > '-t ·-c Please read the precautions on the back before writing this page) * sl · --- line' This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (B) B7 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs _V. The invention description (W) also has a low rate of data exchange errors. In addition, when using a glass substrate, defect inspection and defect correction techniques are established, and even if a drawing error occurs, the drawing error can be easily corrected. After that, the reduced image of the main mask is copied on a substrate of a wafer or the like by using an optical reduction projection exposure apparatus, for example, so as to reduce a drawing error to manufacture a mask. At this time, by repeatedly duplicating the main mask, multiple masks can be manufactured. Compared with manufacturing multiple masks with an electron beam drawing device, the time required for mask manufacturing can be greatly reduced, and the light can be greatly reduced. Hood manufacturing costs. In addition, when the magnification of the mother pattern (PRA; PRB) drawn on the main mask (RA; RB) is large, the required drawing accuracy is not particularly high, and the drawing on the main mask can also be processed. High-capacity laser beam drawing device, which can shorten the manufacturing time of the mask more. Furthermore, in order to compensate the stress deformation of the substrate caused by the asymmetry of the pattern density in the pattern field, it is preferable to correct the position where the mother pattern is formed on the main mask. Furthermore, it is preferable to change the position of a part of a pattern formed in the pattern area. Furthermore, it is better to divide the mother pattern into a plurality of partial mother patterns, form the plurality of partial mother patterns respectively to make a plurality of master masks, and reduce the image of the plurality of partial mother patterns at the same time. Copy the screen while making a connection on the substrate, and correct the formation position of a part of the mother pattern on the main mask. Secondly, the photomask manufacturing device of the present invention is a device having a substrate (1E) arranged in a direction of at least one dimension separated by a predetermined boundary area. 6 paper sizes are applicable to Chinese National Standard (CNS) A4 specifications < 210 X 297 mm) ---------------- Fly-I (Please read the precautions on the back before filling this page)
-5J •線- A7 B7 五、發明說明（f) 之既定形狀的複數之圖案領域，分別於此複數之圖案領域 形成複製用之圖案，其特徵在於，具備有： 光罩台(10)，係順序裝載複數之主光罩(RC~RG)，該主 光罩分別描畫有已擴大之合倂了複數之圖案領域及邊界區 域圖案之母圖案之分割部分母圖案； 基板台(17)，係用以保持基板(1E)以進行定位； 連接裝置（11，16)，係用以進行前述光罩台上之主光 罩(RC)與已複製於基板上之前述部分母圖案像之連接； 照明光學系（12)，係用以對前述光罩台上之前述主光 罩照射曝光用之照射光；以及 投影光學系（15)，係用以將前述主光罩之圖案的縮小 像投影於保持於前述基板台上之前述基板上。 根據上述本發明之光罩製造裝置，能實施本發明之光 罩製造方法，亦即能由1組主光罩製造複數片之光罩，相 較於以電子束描畫裝置來製造複數片之光罩，能縮短製造 光罩所需之時間，同時能以更低之成本來製造光罩。 其次，本發明之元件製造方法，係用以將疊層構造元 件之既定塗層的圖案(2)形成於第1基板(5C)上，其特徵在 於，具有： 第1步驟，係將既定塗層之圖案(2)擴大α倍（^爲比1 大之實數)的圖案(3)至少分割於一維方向所得之複數的第1 圖案(4a)，藉於其分割方向相隔既定間隔(4b)配置，以作成 第2圖案⑷； 第2步驟’係藉將擴大此第2圖案⑷爲yS倍（点爲比1 7 -------------Μ — (請先閱讀背面之注意事項再ir寫本頁) 訂· -線_ 經濟部智慧財產局員工消费合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） B7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（t) 大之實數)之母圖案(6)，描畫於1個或複數片之第2基板上 ，以製作主光罩(Ri(i= 1〜N)); 第3步驟，係藉將縮小此主光罩圖案爲1/石倍之光 學像複製於第3基板(1D)上，以製作工作光罩(WM4);以及 第4步驟，係邊對應於前述工作光罩上之前述複數的 第1爵案之圖案(Pu))縮小爲l/α倍的帶電粒子線像進行圖 案之接續，一邊複製於前述第1基板(5C)上。 根據上述本發明之元件製造方法，由前述主光罩(Ri) 使用例如光學式之投影曝光裝置，能製造複數片之工作光 罩，相較於以電子束描畫裝來製造複數片之工作光罩，能 縮短製造光罩所需之時間，進而縮短製造元件所需時間， 而能以更低的成本來製造元件。此外，於製造複數種類之 元件時，於形成於該複數種類之元件的圖案上有共通部分 之情形時，藉製作將前述圖案之共通部分做爲母圖案來描 畫之主光罩，能於製造複數種類之元件時共用前述主光罩 ，而能以更低之成本製造元件。 【圖式之簡單說明】 圖1(A)係顯示於本發明之光罩製造方法的實施形態之 一例中’製造之電子束曝光裝置用之第1工作光罩之平面 圖，圖1(B)係沿著圖1(A)之AA線的剖面圖。 圖2係顯示於本發明實施形態之一例，能製造的電子 束曝光裝置用之第2工作光罩之圖。 圖3(A)係顯示將由圖1之工作光罩WM1複製於晶圓 上之電路圖案擴大後之圖案的圖，圖3(B)係顯示藉描畫分 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再堉寫本頁) "'裝 ----訂---------線· B7 五、發明說明（^ ) 割圖3(A)之圖案以製造之主標線板的圖。 圖4(A)係顯示將由圖2之工作光罩WM2複製於晶圓 上之電路圖案擴大後之圖案的圖，圖4(B)係顯示藉描畫分 割圖4(A)之圖案以製造之主標線板的圖。 圖5係顯示複製複數片主標線板上之圖案而製造的工 作光罩之平面圖。 圖6係顯示對工作光罩製造用之基板進行曝光時，使 用之光學式縮小投影型曝光裝置之槪略構成圖。 圖7係顯示圖6之縮小投影型曝光裝置的校正光學系 16近旁之切除一部份的擴大圖。 圖8係顯示形成於主標線板之母圖案的設計步驟之一 例。 圖9係顯示工作光罩及半導體元件之製造步驟的一例 〇 【發明之實施形態】 以下，參照圖式說明有關本發明之適當的實施形態之 一例。本例係將本發明適用於使用電子束曝光裝置之光罩 的製造方法。 圖1(A)，係顯示本例中做爲製造對象之電子束曝光裝 置用的工作光罩WM1，此圖1(A)中，工作光罩WM1係於 厚100//m〜1mm程度之矽晶圓等圓板狀的晶圓(wafer)所構 成之光罩基板1A上，形成做爲原版圖案之複數的光罩圖 案P1A。圖1(B)係顯示沿圖1(A)之AA線的剖面圖，此圖 1(B)中，在形成工作光罩WM1之光罩圖案PlA的面之相反 9 本紙張尺度適用中國國家標準（CNS〉A4規格（210 X 297公釐） (請先閱讀背面之注意事項 IV裝--- 再^r寫本頁) -線· 經濟部智慧財產局員工消费合作社印製 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（/) 面(以下稱爲「反面」），形成有作爲一例其厚度爲20/zm 程度以下之複數列的薄膜部lAa。薄膜部lAa表面對應著 本發明之圖案領域。如圖1(A)所示，薄膜部lAa ’係先行 控出以使短邊方向之寬成爲1〜2mm程度之長方形狀，於 此長方形狀之複數列的薄膜部lAa之相反側的光罩基板1A 表面，分別形成有光罩圖案P1A。又，爲了維持工作光罩 WM1之強度，於複數列之薄膜部lAa的短邊方向之間，形 成有其短邊方向寬之10〜50%左右的寬之厚度的厚區域(以 下稱爲「條狀部」）lAb。本例之條狀部lAb的厚度，與光 罩基板1A之厚度相同。又，光罩基板1A之條狀部lAb在 電子光束無法透過之範圍，可使其薄至30^m左右。 如上述般，由於工作光罩WM1上交互的形成薄膜部 lAa及條狀部lAb，因此在將工作光罩WM1上之複數列的 光罩圖案P1A以電子束曝光裝置複製於晶圓上時，係一邊進 行連接以條狀部lAb隔開之各光罩圖案Pm的縮小像之畫 面，一邊順序連接後進行複製。最後，各光罩圖案P1A成爲 將晶圓上所形成之一個電路圖案的擴大圖案分割爲每個寬 度爲1〜2mm左右之物。 又，於製造鏤印光罩時，各光罩圖案Pu係形成爲於 薄膜部lAa內微小之多數的開口部。此時，薄膜部lAa爲 了不太讓電子束透過，係形成的較厚。另一方面，於製造 薄膜光罩時，做爲光罩基板1A係使用於表面形成例如 SiN(氮化矽）膜之矽晶圓，將相當於此光罩基板之薄膜部 lAa的領域之矽全部除去，以於SiN膜上散射電子束之鎢 10 (請先閱讀背面之注意事項再 >'裝— 本頁) * 50 · --線- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) A7 B7 五、發明說明（ 經濟部智慧財產局員工消费合作社印製 (W)等材料形成各光罩圖案plA。 圖2係顯示以本例之光罩製造方法所能製造之電子束 曝光裝置用的工作光罩之另一例，此圖2中，在工作光罩 WM2之光罩基板1B的反面，形成1邊約1〜2mm左右之 正方形狀之薄的薄膜部IBa，各薄膜部IBa係隔著各邊長 度之10〜50%左右之寬度厚的條狀部lBb，於縱橫二維方 向排列。再者，與工作光罩WM1(參照圖1)相同的，於做 爲圖案領域之各薄膜部IBa表面分別形成有光罩圖案P1B。 此外，爲方便說明，圖1、圖2中相較於光罩基板ΙΑ、1B 之外徑，係將薄膜部lAa ' IBa及光罩圖案P1A、P1B顯示的 較大。 此情形中，於將工作光罩WM2之各光罩圖案P1B以電 子束曝光裝置複製於晶圓上時，亦係一邊進行各光罩圖案 P1B之縮小像的畫面接續，一邊順序連接後進行複製。此外 ，關於以電子束曝光裝置之一邊進行畫面接續之光罩圖案 的複製之詳細說明，由已在引用之文獻「Jpn. J. Appl. Phys.Vol. 34, pp. 6658-6662, pp. 6663-6671，pp. 6672-6678 (1995)」 及曰本國特開平5-251317號公報中有揭示，故此處省略其 詳細說明。 又，將根據本發明之工作光罩上的圖案，複製於晶圓 上之電子束曝光裝置’不僅上述文獻及公報，例如於日本 國特開平8-64522號公報及對應之美國專利第5624774號， 美國專利第5079112號等中亦有揭示，在本國際申請所指 定之指定國或選擇之選擇國國內法令允許範圍，沿用上述 11 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱〉 請先 閱 讀 背 意 事 項 再 Γ裝 訂 A7 B7 五、發明說明（ίp) 公報及美國專利之揭示以做爲本文記載之一部分。再者’ 根據本發明之工作光罩之具體構成’例如於美國專利第 5260151號中有所揭示，於本國際申請所指定之指定國或選 擇之選擇國國內法令允許範圍’沿用此美國專利的開示以 做爲本文記載之一部分。 本例中，係製造描畫包含各光罩圖案及相當於各條狀 部之邊界區域的圖案以既定倍率擴大之母圖案的主標線板 ，將此主標線板上之圖案縮小複製於光罩基板，以製成工 作光罩。以下，說明此主標線板之製造方法等。 圖3(A)係顯示使用電子束複製裝置以既定倍率擴大從 圖1之工作光罩WM1要複製於晶圓上之電路圖案的圖案 P5A，圖4(A)係以既定倍率擴大從圖2之工作光罩WM2要 複製於晶圓上之電路圖案的圖案P5B。藉於此等圖案P5A及 P5B中分別組裝入既定之邊界區域的圖案，透過電子束描畫 裝置描畫於基板上以製造圖3(B)之主標線板RA及圖4(B) 之主標線板RB。 經濟部智慧財產局員工消費合作社印製 ------------1裝—— (請先閲讀背面之注意事項再«'寫本頁) --線· 圖3(B)之主標線板RA，係使用於製造圖1之工作光罩 WM1時，圖4(B)之主標線板RB係使用於製造圖2之工作 光罩WM2時。圖3(B)中，於主標線板RA，分割圖3(A)之 圖案P5A夾住邊界區域而排列的母圖案PRA係以描畫方式形 成。再者，同樣地於主標線板RB，分割圖4(A)之圖案P5B 夾住邊界區域而排列於二維方向之母圖案PRB係以描畫方 式形成。 圖1之工作光罩WM1上的各光罩圖案P1A，由於其短 12 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） A7 B7 五、發明說明（【I ) 經濟部智慧財產局員工消費合作社印製 邊方向之寬度係以1〜2mm之方式排列，在將主標線板RA 上之母圖案PRA例如以縮小倍率1/5倍，複製於光罩基板 1A上時，主標線板RA上之母圖案PRA，其短邊方向之寬 度係以5〜l〇mm來排列。然後，使用電子束曝光裝置，例 如將光罩圖案P1A以縮小倍率1/4倍複製於晶圓上時，形 成於主標線板RA上之母圖案PRA的容許誤差爲最後所製造 之半導體元件的基板(晶圓)上之電路圖案的容許誤差之20 倍。因此，於製造主標線板時，相較於以往所使用之電子 束描畫裝置，亦能使用精密度雖較低但描晝速度較快之雷 射光束描畫裝置，而能以更短的時間製造主標線板。 再者，於製造工作光罩WM1時，在已經形成薄膜部 lAa之光罩基板1A表面，係取其與薄膜部lAa之位置的整 合性同時複製主標線板RA上之母圖案IV的縮小像。然後 ，此等被分割之母圖案PRA的間隔，必須與已縮小時工作 光罩WM1上之各薄膜部lAa的間隔，亦即，條狀部lAb 之寬一致之方式製造主標線板RA。至於主標線板RB也是 同樣。 上述之實施形態中，爲了簡單的說明，於工作光罩之 製造中只使用1片主標線板，但由1片主標線板能複製之 區域，即使在使用最新之光學式投影曝光裝置時，亦爲 20mm角程度之面積，若再縮小爲1/4倍，於晶圓上只能 成爲5mm角程度之面積。因此，於實際製造工作光罩時， 係製造複數片主標線板，而一邊對該等母圖案進行畫面接 續，一邊順序複製於工作光罩用之基板。 13 本紙張尺度適用中國國家標準<CNS)A4規格（210 X 297公釐） 閱 讀 背 意 再 書裝 訂 A7 B7 五、發明說明（/L) 又，此處之畫面接續，並非僅指自各個主標線板將複 製之圖案接合於工作光罩上，也包含以既定之間隔離散地 排列於各個主標線板上之各個前述的母圖案，對以既定之 間隔週期性的排列於工作光罩上之前述離散地圖案區域， 分別正確的定位後進行複製。 圖5係顯示使用複數片之主標線板以製造工作光罩 WM3，此圖5中，在工作光罩WM3之光罩基板1C上，形 成有例如自各個不同之主標線板複製之1組(圖5中爲16 個)之圖案。該等圖案IVP16的內部，係由1〜2mm左 右之寬度的複數之光罩圖案及各光罩圖案間之間隔部分所 .構成，各圖案ΡπΡα之形成位置，係與各光罩圖案之位置 形成於光罩基板1C反面的薄膜部一致。 再者，並不一定需要將此等圖案Pl~Pl6全部形成於不 同之主標線板上，將一些圖案形成於同一主標線板上亦可 。此時，只要自形成於1個主標線板上之複數的圖案中， 選擇所希望之圖案後，複製於光罩基板1C上即可。 此外，以此方式將形成於工作光罩WM3之光罩圖案 分割爲複數之圖案時，例如亦可以均等分割面積之方式進. 行，但最好是以每一具有特定機能之單元電路圖案爲單位 進行分割，例如以每一構成系統LSI之IP(Intellectual Property)部爲單元進行分割較佳。亦即，最好是每一CPU 中心部、RAM部、ROM部' A/D變換部、D/A變換部 等之各單元電路圖案，各自形成不同之主標線板。此時， 在製造不同品種之系統LSI用的工作光罩時，有關共用之 14 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再 -裝i I 寫本頁) --線· 經濟部智慧財產局貝工消費合作社印製 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（4) ip部’能使用同一之主標線板，亦能減少主標線板之製造 片數。因此，能削減工作光罩之製造成本，進而削減各種 系統LSI之製造成本。 其次’參照圖8及圖9說明關於適用上述實施形態之 光罩製造方法的半導體元件之製造步驟之一例。 圖8係顯示形成本例之主標線板的母圖案之設計步驟 ’此圖8中，首先設計最後被製造之半導體元件之某塗層 的電路圖案2。其次，作成將該電路圖案2擴大α倍（〇：> 1)之擴大圖案3，將分割此擴大圖案3而得到之複數的長方 形圖案4a ’藉於短邊方向相隔既定間隔L之方式配置，將 光罩圖案4於電腦之設計數據(包括畫像數據)上作成。亦 即，於各圖案4a間分別形成寬爲L之邊界區域4b。再者 ，α倍係工作光罩使用之電子束曝光裝置的縮小倍率(1/ α)之倒數’ α例如爲4、5等。然後，將該光罩圖案4擴 大爲Θ倍（/5 >1)之母圖案6於設計數據(包括畫像數據)上 作成，縱橫地分割該母圖案6後，將Ν個部分母圖案Pi、 P2.....PN於設計數據上作成。圖8中，顯示N= 16之例 。又，万倍係於縮小複製主標線板之圖案時，使用色光學 i式雜影曝光裝量之藤小倍率(1/W的倒數， 、5等。此外’部分母圖案Ρ1〜ΡΝ之分割方法，亦可如上 述般於每一 IP部不規則地進行。 圖9係顯不本例之工作光罩及半導體元件的製造步驟 ，此圖9中’首先自圖8之部分母圖案Pi(i=丨〜奶生成各 個電子束描畫裝置(亦能使用雷射光束描畫裝置等)用之描 15 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I -------I --------- (請先閲讀背面之注意事項再f寫本頁) 經濟部智慧財產局員工消费合作社印製 B7_____ 五、發明說明（丨f) ^畫數據，將該部分母圖案Pi分別以等倍形成遮光膜，藉於 此上面進行塗布有光阻之玻璃基板上的圖案領域7之描畫 、顯像及腐蝕等，作成做爲母光罩之主標線板Ri。 其次，使用光學式步進機等之投影曝光裝置，對該N 片主標線板Ri之部分母圖案Pi的1//3倍縮小像Hi(i= 1 〜N)，一邊依序進行畫面接續，一邊複製於塗布有光阻之 光罩基板1D上。之後，將塗布於光罩基板1D上之光阻顯 像，藉進行腐蝕等來完成工作光罩WM4。然後，使用電子 束曝光裝置以縮小倍率l/α，將工作光罩WM4上之光罩 圖案PlD，於塗布有光阻之晶圓5C上之各照射領域SA，一 邊進行畫面接續，一邊順序複製，藉進行顯像及腐蝕等， 形成某塗層之電路圖案P5C。更進一步的，在重複曝光步驟 、圖案形成步驟後，經切割步驟及打線步驟，即能製造所 希望之元件。 其次，參照圖6及圖7說明有關本例之光罩製造裝置 〇 圖6係顯示對工作光罩製造用之基板進行曝光時，使 用之光學式投影曝光裝置，此圖6中，在曝光時，藉由曝 光光源、照度均一化用之複眼透鏡(或桿狀積分儀），照明 系開口光圈，標線板遮光板(可變視野光圈），及聚光鏡系 構成之照明光學系12,將曝光光照射於標線板台10上之 主標線板RC。主標線板RC，係例如圖3(B)或圖4(B)之標 線板。又，做爲曝光光，可使用如KrF準分子雷射光(波長 248nm)，ArF準分子雷射光(波長I93nm)，F2雷射光(波長 16 (請先閱讀背面之注意事項再 Λ'裝.— I :¼寫本頁) -ia -線. 本紙張尺度適用中國國家楳準（CNS)A4規格（210 X 297公爱) 經濟部智慧財產局員工消费合作社印製 A7 B7 五、發明說明) 157nm)，固體雷射之高次諧波，或水銀燈之i線（波長 365nm)等之波長爲100〜400nm左右之紫外光。 以照明光學系12之標線板遮光板設定之照明領域內的 主標線板RC之圖案的像，係透過投影光學系15，以縮小 倍率1/泠（Ι/yS爲例如1/4、1/5等)複製於由表面塗布 有做爲感光性薄膜之光阻的晶圓構成之光罩基板1E上。本 例之投影光學系15，係兩側遠心的折射系，但除此外，亦 可使用包含凹面鏡等之反射折射系等。以下，於平行於投 影光學系15之光軸AX上取Z軸，在垂直於z軸之平面內 ，平行於圖6之紙面上取X軸，垂直於圖6之紙面上取Y 軸來說明。 首先，於對向主標線板RC之1對的邊之附近上方配 置標線板校正顯微鏡(RA顯微鏡)11，藉此RA顯微鏡11來 測量主標線板RC上之校正記號(未圖示)的位置，根據此測 量結果藉驅動標線板台10，於XY平面內相對於光罩基板 1E定位主標線板RC。 另一方面，光罩基板1E係被未圖示之基板保持具以 真空吸附之方式(或無吸附之3點支撐)保持，此基板保持 具係固定於試料台17上，試料台17係移動自如地配置於 試料基台20上。試料基台20，例如係以線性馬達方式於X 方向、Y方向定位試料台17。此外，於光罩基板1E，爲了 將複數之主標線板RC〜RG上各自形成之圖案的縮小像， 一邊順序進行畫面接續，一邊複製，因此必須高精度地進 行主標線板RC〜RG及光罩基板1E之定位。因此，係於試 17 ~--------訂---------線 γ (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） A7 B7 五、發明說明（〖t ) 料台17上部固定移動鏡18，藉移動鏡18及雷射干涉儀19 來測量試料台17之X座標、Y座標及旋轉角，根據此測量 値以進行試料基台20之控制。再者，以未圖示之自動聚焦 感知器’測量光罩基板1E之聚焦位置(光軸AX方向之位 置）’試料台17藉控制光罩基板1E之聚焦位置及傾斜角， 能將光罩基板1E表面與投影光學系15之像面吻合。 再者，本例中，在標線板台10側方，配置架狀之主標 線板庫14，在主標線板庫14內於2方向順序排列之支撐 板上配置有主標線板RC〜RG。於此等主標線板RC〜RG 上’分別以描畫形成有例如分割圖8之母圖案6的部分母 圖案或複數種類之IP部等的圖案。因此，主標線板RC〜 RG之數量不限定於5片，可視需要增減。主標線板庫14 ’係以未圖示之滑動裝置移動自如地支撐於Z方向，於標 線板台10與主標線板庫14間配置有旋轉自如且能於Z方 向既定範圍內移動之標線板載置器13。藉滑動裝置調整主 標線板庫14之Z方向的位置後，以標線板載置器13在主 標線板庫14中所希望之支撐板與標線板台1〇之間，據以 進行所希望之主標線板RC〜RG之輸送的方式構成。 又，本例中，爲了連續地製造複數片之工作光罩，將 用以搬送工作光罩用之光罩基板IE、1F之光罩基板載置器 21，配置於試料基台20附近。光罩基板載置器21，爲了 不使反面有條狀構造之光罩基板IE、1F變形，例如係以真 空吸附來保持於保持光罩基板之面，於保持光罩基板之面 ’形成有例如配合光罩基板反面之邊的位置之真空吸附孔 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------，裝--- (請先閲讀背面之注意事項再填寫本頁) 15J· 線 經濟部智慧財產局員工消费合作社印製 _____Β7_ 五、發明說明（，]) 。此情形在試料台17上之基板保持具(未圖示)上亦相同。 再者，爲了將主標線板RC上之母圖案的縮小像及形 成於光罩基板1E反面之薄膜部lEa(參照圖7)，高精度地 定位後曝光，於本例之曝光裝置設置有校正光學系16。 圖7係顯示本例之反面照明表面檢出之校正光學系16 之附近，此圖7中，由設於試料台17中之光源22及聚光 透鏡23構成之校正用照明光學系來之波長700〜lOOOnm左 右的近紅外光自光罩基板1E反面照射，將該透過光，例如 以由攝像系構成之校正光學系16進行檢測。由於光罩基板 1E之材料爲矽晶圓，因近紅外光對矽具有某程度之透過性 ，該透過光之強度因光罩基板1E的厚度，亦即，光罩基板 1E反面之照明領域爲薄膜部lEa或條狀部lEb而變動。因 此，根據該透過光之像的強度，檢測光罩基板1E之薄膜部 lEa的位置，即能定位母圖案之縮小像及薄膜部lEa以進 行曝光。 回到圖6，將主標線板RC〜RG上之母圖案複製於光 罩基板1E時，首先使用RA顯微鏡12來進行主標線板RC 之校正，藉移動試料台17，將光罩基板1E上之既定的照 射領域移動至投影光學系15之曝光領域。此外’調整照明 光學系12之標線板遮光板’以使之僅照射主標線板RC上 所希望之圖案。然後’以照明光學系12照明主標線板RC 上之該圖案，將該圖案之縮小像透過投影光學系丨5投影曝 光於光罩基板1E上。然後，假設將主標線板RC上之不同 領域的圖案之像’複製於光罩基板1E上之不同照射領域時 19 本紙張尺度適用中國國家標準（CNS〉A4規格（210 X 297公爱） 經濟部智慧財產局員工消費合作社印製 Α7 Β7 五、發明說明(α) ，當對一個照射領域之曝光結束時’調整照明光學系12之 標線板遮光板，使主標線板RC上之下一個複製對象之圖 案能被照明，並移動試料台17將光罩基板1Ε上之下一個 照射領域移動至投影光學系15之曝光領域’以步進及重複 方式來重複對主標線板RC之圖案的像之曝光動作’進行 對光罩基板1Ε上之既定的照射領域之曝光° 當主標線板RC上之圖案的曝光結束時’移動試料台 17將光罩基板1Ε上之下一個照射領域移動至投影光學系 15之曝光領域，與此同時，將標線板台1〇上之主標線板 RC，透過標線板載置器13送回主標線板庫14 ’下一個複 製對象之主標線板RD，透過標線板載置器13載置於標線 板台10上。然後在進行校正後，該主標線板RD之縮小像 透過投影光學系15投影曝光於光罩基板1Ε上之對應的照 射領域，以下以步進及重複方式，於光罩基板1Ε上之剩下 之照射領域，進行順序對應之主標線板RE〜RG之縮小像 的曝光。然後，針對全部之照射領域之曝光結束後，顯影 塗布於光罩基板1Ε上之光阻，經飩刻步驟、光阻剝離步驟 等，據以在光罩基板1Ε上以畫面接續的狀態形成主標線板 RC〜RG上之各圖案。 再者，爲了將使用電子束曝光裝置，複製光罩基板1Ε 之圖案於晶圓時之光罩基板1Ε校正用的光罩記號，以及爲 了於下一步驟檢測形成於晶圓上之圖案的位置之晶圓記號 ，預先形成於光罩基板1Ε(工作光罩），於主標線板rc〜 RG內至少1片上形成有此等校正用的記號。 20 ------------裝--------訂---------線Ν (請先閱讀背面之注意事項再#"寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） A7 B7 五、發明說明（θ) 經濟部智慧財產局員工消費合作社印製 又，於本例使用了一次曝光型之投影曝光裝置’但也 可使用如步進及掃描方式之掃描曝光型的縮小投影曝光裝 置。又，將主標線板之圖案的縮小像複製於工作光罩用之 基板上時，也可使用光學方式以外之縮小複製裝置’例如 精密度較低之電子束曝光裝置’但使用光學式之縮小複製 裝置時，因能使用已確立製造技術及描畫誤差之修正技術 的玻璃基板來製造主標線板，具有能容易地進行主標線板 之製造、檢查、及修正之優點。 又，於工作光罩形成光罩圖案前，最好是預先於工作 光罩之光罩基板的反面形成薄膜部。此係因在光罩圖案形 成後形成薄膜部，有因形成薄膜部時所產生之應力使光罩 基板變形，而光罩圖案產生位置偏差之可能。 此工作光罩之變形(應力變形），不僅因薄膜部之形成 而產生，也會因光罩圖案之形成而產生。特別是於由寬 1mm程度以內之長方形領域或1mm四方程度領域而成之薄 膜部上，形成之光罩圖案的密度(粗密的程度)分布有較大 之非對稱的情形中，隨此光罩圖案之密度差產生於該薄膜 部內之應力變形，形成之光罩圖案有可能從所希望之位置 偏離。 由於此圖案之密度差所產生之工作光罩的應力變形， 能根據光罩圖案數據以模擬進行推定。因此，於製造主標 線板時，預先推定因應力變形所產生之光罩圖案的位置偏 離量，藉將主標線板上之母圖案（部分母圖案）的形成位置 預先偏離既定量’即能修正因圖案之密度差所產生之光罩 21 t紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） 請 先 閲 讀 背-5J • Line-A7 B7 V. Description of the Invention (f) A plurality of pattern areas of a predetermined shape, each forming a pattern for reproduction in the plurality of pattern areas, which is characterized by having: a mask stage (10), A plurality of main photomasks (RC ~ RG) are sequentially loaded, and the main photomasks respectively depict a mother pattern of a divided part of an enlarged mother pattern combining a plurality of pattern areas and a boundary region pattern; a substrate table (17), It is used to hold the substrate (1E) for positioning; the connection device (11, 16) is used to connect the main photomask (RC) on the aforementioned photomask stage and the aforementioned part of the mother pattern image copied on the substrate ; Illumination optics (12), which is used to irradiate the aforementioned main mask on the mask stage with exposure light; and projection optics (15), which is used to reduce the image of the pattern of the aforementioned main mask Projection on the substrate held on the substrate stage. According to the mask manufacturing apparatus of the present invention described above, the mask manufacturing method of the present invention can be implemented, that is, a plurality of masks can be manufactured from a group of main masks, compared with the electron beam drawing apparatus to manufacture a plurality of sheets of light. The mask can shorten the time required to manufacture the mask, and at the same time can manufacture the mask at a lower cost. Next, the device manufacturing method of the present invention is used to form a pattern (2) of a predetermined coating layer of a laminated structure element on a first substrate (5C), which is characterized by having: a first step of applying a predetermined coating The layer pattern (2) is enlarged by a factor of α (^ is a real number greater than 1). The pattern (3) is at least divided into a plurality of first patterns (4a) obtained in a one-dimensional direction. The division direction is separated by a predetermined interval (4b). ) Configuration to make the second pattern ⑷; The second step 'is to expand this second pattern ⑷ to yS times (the point is greater than 1 7 ------------- Μ — (please first Read the notes on the back and write this page again) Order · -line _ Printed by the Intellectual Property Bureau of the Ministry of Economy Employees' Cooperatives This paper is printed in accordance with China National Standard (CNS) A4 (210 X 297 mm) B7 B7 Wisdom of the Ministry of Economic Affairs The mother pattern (6) printed by the Property Cooperative Consumer Cooperative (5) Invention Description (t) Large Real Number) is drawn on one or more second substrates to make the main photomask (Ri (i = 1 ~ N)); The third step is to make a working mask (WM4) by copying an optical image with a 1 / stone reduction of the main mask pattern on the third substrate (1D); and the fourth In this step, the charged particle line images corresponding to the aforementioned plural number one pattern (Pu) on the working mask are reduced to 1 / α times, and the pattern is continued, while being copied on the first substrate (5C). )on. According to the above-mentioned element manufacturing method of the present invention, a plurality of working masks can be manufactured from the main mask (Ri) using, for example, an optical projection exposure device, as compared to manufacturing a plurality of working lights using an electron beam drawing device. The mask can shorten the time required to manufacture the photomask, thereby reducing the time required to manufacture the component, and can manufacture the component at a lower cost. In addition, when manufacturing a plurality of types of elements, and when there is a common portion on a pattern formed on the plurality of types of elements, a master mask can be produced by making the common portion of the aforementioned pattern as a mother pattern, which can be manufactured. In the case of a plurality of types of components, the aforementioned main mask is shared, and components can be manufactured at a lower cost. [Brief description of the drawings] FIG. 1 (A) is a plan view of a first working mask for an 'manufactured electron beam exposure apparatus', which is an example of an embodiment of a method for manufacturing a mask of the present invention, and FIG. 1 (B) It is a sectional view taken along the line AA in FIG. 1 (A). Fig. 2 is a view showing a second working mask for an electron beam exposure apparatus that can be manufactured as an example of an embodiment of the present invention. Figure 3 (A) shows the enlarged pattern of the circuit pattern copied from the working mask WM1 of Figure 1 on the wafer, and Figure 3 (B) shows that by drawing 8 paper dimensions are applicable to the Chinese National Standard (CNS ) A4 size (210 X 297 mm) (Please read the notes on the back before writing this page) " 'Installation ---- Order --------- Line · B7 V. Description of the invention ( ^) A drawing of the main reticle cut from the pattern in Figure 3 (A). FIG. 4 (A) is a diagram showing an enlarged pattern of a circuit pattern copied from the working mask WM2 of FIG. 2 on a wafer, and FIG. 4 (B) is a diagram showing the pattern of FIG. 4 (A) divided by drawing to manufacture Illustration of the main graticule. Fig. 5 is a plan view showing a working mask made by copying a pattern on a plurality of main reticles. Fig. 6 is a schematic configuration diagram showing an optical reduction projection type exposure apparatus used when a substrate for manufacturing a working mask is exposed. FIG. 7 is an enlarged view showing a cut-out portion near the correction optical system 16 of the reduced projection type exposure apparatus of FIG. 6. Fig. 8 shows an example of design steps of a mother pattern formed on a main reticle. FIG. 9 shows an example of manufacturing steps of a working mask and a semiconductor device. [Embodiment of the Invention] Hereinafter, an example of a suitable embodiment of the present invention will be described with reference to the drawings. This example is a method for applying the present invention to a photomask using an electron beam exposure apparatus. Fig. 1 (A) shows the working mask WM1 for the electron beam exposure device used as a manufacturing object in this example. In this figure 1 (A), the working mask WM1 is about 100 // m to 1 mm thick. A mask pattern P1A is formed on the mask substrate 1A made of a wafer, such as a silicon wafer, as a master pattern. Fig. 1 (B) is a cross-sectional view taken along the line AA in Fig. 1 (A). In this Fig. 1 (B), the surface of the mask pattern PlA forming the working mask WM1 is opposite. Standard (CNS> A4 size (210 X 297 mm) (Please read the precautions on the back of the IV pack --- ^ r to write this page))-Line · Printed by the Ministry of Economic Affairs Intellectual Property Bureau Employee Consumer Cooperative A7 B7 Ministry of Economic Affairs Printed by the Intellectual Property Bureau's Consumer Cooperative Cooperative 5. The invention description (/) surface (hereinafter referred to as the "reverse side") has, as an example, a plurality of thin film portions 1Aa having a thickness of about 20 / zm or less. The thin film portions 1Aa correspond to the surface In the field of the pattern of the present invention, as shown in FIG. 1 (A), the thin film portion 1Aa 'is first controlled to have a rectangular shape with a width in the short-side direction of approximately 1 to 2 mm. A mask pattern P1A is formed on the surface of the mask substrate 1A on the opposite side of 1Aa. In order to maintain the strength of the working mask WM1, a short-side direction is formed between the short-side directions of the film portions 1Aa in a plurality of rows. 10 to 50% wide thick area (hereinafter referred to as "stripes" ”) LAb. The thickness of the stripe portion 1Ab in this example is the same as the thickness of the mask substrate 1A. In addition, the stripe portion 1Ab of the mask substrate 1A can be made as thin as 30 ^ m in a range where the electron beam cannot pass through. As described above, since the film portion 1Aa and the stripe portion 1Ab are alternately formed on the working mask WM1, a plurality of mask patterns P1A on the working mask WM1 are copied on the wafer by an electron beam exposure device. At this time, the screens of the reduced mask patterns Pm separated by the stripe section 1Ab are connected while being sequentially connected and copied. Finally, each of the mask patterns P1A becomes a circuit pattern formed on the wafer. The enlarged pattern is divided into objects each having a width of about 1 to 2 mm. In addition, when the stencil mask is manufactured, each mask pattern Pu is formed as a small majority of openings in the thin film portion 1Aa. At this time, the thin film The part 1Aa is formed to be thick so as not to allow the electron beam to pass through. On the other hand, when manufacturing a thin-film photomask, the photomask substrate 1A is a silicon wafer on which a SiN (silicon nitride) film is formed on the surface. Will be equivalent to the thin film portion 1Aa of this photomask substrate All the silicon in the field is removed in order to scatter the electron beam tungsten 10 on the SiN film (please read the precautions on the back first > 'installation — this page) * 50 ·-line-This paper size applies to Chinese national standards ( CNS) A4 specification (210 X 297 mm) A7 B7 V. Description of the invention (printed by (W) and other materials printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and other materials to form each mask pattern plA. Figure 2 shows the mask in this example Another example of a working mask for an electron beam exposure device that can be manufactured by the manufacturing method. In this FIG. 2, a square-shaped thin film having a side of about 1 to 2 mm is formed on the reverse side of the mask substrate 1B of the working mask WM2. The thin film portions IBa are arranged in the vertical and horizontal two-dimensional directions with the strip-shaped portions 1Bb having a width of about 10 to 50% of the length of each side across. Further, similar to the working mask WM1 (see FIG. 1), a mask pattern P1B is formed on the surface of each thin film portion IBa as a pattern area. In addition, for convenience of explanation, the outer diameters of the mask substrates 1A and 1B and the mask patterns P1A and P1B are larger than those of the mask substrates 1A and 1B in FIGS. 1 and 2. In this case, when the mask patterns P1B of the working mask WM2 are copied on the wafer by an electron beam exposure device, the screens of the reduced images of the mask patterns P1B are sequentially connected and copied while being sequentially connected. . In addition, the detailed description of the reproduction of the mask pattern on the screen by one side of the electron beam exposure device is described in the cited document "Jpn. J. Appl. Phys. Vol. 34, pp. 6658-6662, pp. 6663-6671, pp. 6672-6678 (1995) "and Japanese Unexamined Patent Publication No. 5-251317, so detailed descriptions are omitted here. In addition, the pattern on the working mask according to the present invention is reproduced on an electron beam exposure apparatus' not only the above-mentioned documents and publications, but, for example, Japanese Unexamined Patent Publication No. 8-64522 and corresponding US Patent No. 5,624,774 It is also disclosed in US Patent No. 5079112, etc. that within the scope permitted by the domestic laws of the designated or selected country specified in this international application, the above 11 paper standards apply the Chinese National Standard (CNS) A4 specification (210 X 297) Public love> Please read the intent first and then bind the A7 B7. 5. The disclosure of the invention (ίp) bulletin and the disclosure of the U.S. patent as part of this document. Furthermore, 'the specific structure of the working mask according to the present invention', for example It is disclosed in U.S. Patent No. 5260151 that the scope of the domestic laws allowed in the designated or selected countries specified in this international application 'remains the disclosure of this U.S. patent as part of the record herein. In this example, the manufacturing A main reticle for drawing a mother pattern including a mask pattern and a pattern corresponding to a boundary region of each stripe portion at a predetermined magnification, The pattern on this main reticle is reduced and copied on the mask substrate to make a working photomask. The manufacturing method of this main reticle is explained below. Figure 3 (A) shows the use of an electron beam copying device to set a predetermined The magnification enlarges the pattern P5A of the circuit pattern to be copied on the wafer from the working mask WM1 of FIG. 1, and FIG. 4 (A) is to enlarge the circuit pattern to be copied from the working mask WM2 of FIG. 2 on the wafer at a predetermined magnification. Pattern P5B. Based on these patterns P5A and P5B respectively assembled into the predetermined boundary area pattern, the electron beam drawing device is used to draw on the substrate to manufacture the main reticle RA of FIG. 3 (B) and FIG. 4 (B ) The main marking board RB. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ------------ 1 Pack-(Please read the precautions on the back before «'write this page)- -Line · The main reticle RA of Fig. 3 (B) is used to make the working mask WM1 of Fig. 1, and the main reticle RB of Fig. 4 (B) is used to make the working mask WM2 of Fig. 2. In FIG. 3 (B), on the main graticule plate RA, the mother pattern PRA divided by the pattern P5A of FIG. 3 (A) sandwiching the boundary area is formed by drawing. Moreover, the same The main pattern board RB is divided into a two-dimensional mother pattern PRB that divides the pattern P5B of Fig. 4 (A) by clamping the boundary area. The mask patterns on the working mask WM1 of Fig. 1 are formed by drawing. P1A, due to its short 12 paper size, applicable to China National Standard (CNS) A4 (210 X 297 mm) A7 B7 V. Description of the invention ([I) The width of the printed side of the Intellectual Property Bureau employee consumer cooperative of the Ministry of Economic Affairs It is arranged in a way of 1 to 2 mm. When the mother pattern PRA on the main reticle RA is copied on the photomask substrate 1A at a reduction ratio of 1/5 times, for example, the mother pattern PRA on the main reticle RA is The width in the short-side direction is arranged in a range of 5 to 10 mm. Then, using an electron beam exposure device, for example, when the photomask pattern P1A is copied on a wafer at a reduction ratio of 1/4 times, the tolerance of the mother pattern PRA formed on the main reticle RA is the semiconductor device manufactured last. The allowable error of the circuit pattern on the substrate (wafer) is 20 times. Therefore, compared with the electron beam drawing device used in the past, a laser beam drawing device with a lower precision but a faster daylight speed can be used in the manufacture of the main marking board, and the time can be shortened. Manufacture of main marking board. Furthermore, when manufacturing the working mask WM1, on the surface of the mask substrate 1A on which the thin film portion 1Aa has been formed, the integration with the position of the thin film portion 1Aa is taken while the reduction of the mother pattern IV on the main reticle RA is reproduced image. Then, the interval of these divided mother patterns PRA must be made in a manner that the main reticle RA is made in a manner consistent with the interval of each thin film portion 1Aa on the working mask WM1 when it has been reduced, that is, the width of the strip portion 1Ab. The same applies to the main reticle RB. In the above embodiment, for the sake of simplicity, only one main reticle is used in the manufacture of the working mask, but the area that can be copied by one main reticle, even when using the latest optical projection exposure device At this time, it is also an area with an angle of 20 mm. If it is further reduced to 1/4 times, it can only be an area with an angle of 5 mm on the wafer. Therefore, when actually manufacturing the working mask, a plurality of main reticle plates are manufactured, and while the mother patterns are screen-connected, they are sequentially copied on the substrate for the working mask. 13 This paper size applies the Chinese National Standard < CNS) A4 specification (210 X 297 mm). Read the book and re-binding A7 B7. 5. Description of the invention (/ L) Also, the screens here are not only from the individual The main reticle joins the copied pattern to the working mask, and also includes each of the aforementioned mother patterns arranged on each of the main reticles at a predetermined interval, and is arranged periodically at a predetermined interval on the working light. The aforementioned discretely patterned areas on the mask are respectively correctly positioned and copied. FIG. 5 shows the use of a plurality of main reticles to manufacture a working mask WM3. In FIG. 5, on the reticle substrate 1C of the working reticle WM3, for example, one 1 copied from each of the different main reticles is formed. Groups (16 in Figure 5). The inside of these patterns IVP16 is composed of a plurality of mask patterns with a width of about 1 to 2 mm and the space between the mask patterns. The formation position of each pattern PπPα is formed with the position of each mask pattern. The film portion on the reverse surface of the photomask substrate 1C is aligned. Furthermore, it is not necessary to form all these patterns Pl ~ Pl6 on different main reticles, and it is also possible to form some patterns on the same main reticle. At this time, as long as a desired pattern is selected from a plurality of patterns formed on one main reticle, it can be copied on the photomask substrate 1C. In addition, when the mask pattern formed in the working mask WM3 is divided into a plurality of patterns in this way, for example, the area can be divided equally. However, it is best to use each unit circuit pattern with a specific function as The unit is divided. For example, it is preferable to divide each unit (IP (Intellectual Property)) of the system LSI as a unit. That is, it is preferable that each of the unit circuit patterns of the CPU central portion, the RAM portion, the ROM portion, the A / D conversion portion, the D / A conversion portion, and the like form a different main reticle. At this time, when manufacturing working masks for different types of system LSIs, the 14 paper sizes used in common are applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before- (I write this page) --- Line · Printed by the Shellfish Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed A7 B7 V. Invention Description (4) The ip department can use the same main standard The line plate can also reduce the number of main marking line plates. Therefore, the manufacturing cost of the working mask can be reduced, and the manufacturing cost of various system LSIs can be further reduced. Next, with reference to Figs. 8 and 9, an example of a manufacturing step of a semiconductor device to which the photomask manufacturing method of the above embodiment is applied will be described. Fig. 8 shows design steps for forming a mother pattern of the main reticle of this example. In this Fig. 8, a circuit pattern 2 of a coating of a semiconductor device to be finally manufactured is first designed. Next, an enlarged pattern 3 of which the circuit pattern 2 is enlarged by a factor (0:> 1) is created, and a plurality of rectangular patterns 4a 'obtained by dividing this enlarged pattern 3 are arranged by a predetermined interval L in the short side direction. The mask pattern 4 is created on the design data (including portrait data) of the computer. That is, a boundary region 4b having a width L is formed between each of the patterns 4a. In addition, the inverse number α of the reduction ratio (1 / α) of the electron beam exposure apparatus used in the α-fold working mask is, for example, 4, 5, or the like. Then, the mother pattern 6 of this mask pattern 4 is enlarged to Θ times (/ 5 > 1) and is created on design data (including portrait data). After dividing the mother pattern 6 horizontally and vertically, N partial mother patterns Pi , P2 ..... PN are created on the design data. An example of N = 16 is shown in FIG. 8. In addition, 10,000 times is used to reduce and copy the pattern of the main graticule plate, using a small optical magnification ratio of the optical optical i-type shadow exposure (reciprocal of 1 / W, 5, etc.) In addition, 'part of the mother pattern P1 ~ PN The division method can also be performed irregularly in each IP part as described above. Fig. 9 shows the manufacturing steps of the working mask and the semiconductor element in this example. In this Fig. 9, 'from the first part of the mother pattern Pi in Fig. 8 (i = 丨 ~ Each electron beam drawing device for milk generation (can also use laser beam drawing device, etc.) 15 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) I- ----- I --------- (Please read the precautions on the back before writing this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs B7_____ V. Description of Invention (丨 f) According to the data, a part of the mother pattern Pi is formed into a light-shielding film at equal times, and the pattern area 7 on the glass substrate coated with a photoresist is used for drawing, developing, and etching, etc., to be used as the master of the mother mask. Graticule Ri. Next, using a projection exposure device such as an optical stepper, A 1 // 3-fold reduced image Hi (i = 1 to N) of the denominator pattern Pi is sequentially copied on the photoresist-coated photomask substrate 1D while sequentially connecting the screens. Then, the photomask 1D is applied to the photomask substrate 1D. The upper photoresist is developed, and the working mask WM4 is completed by etching. Then, using an electron beam exposure device to reduce the magnification 1 / α, the photomask pattern PlD on the working mask WM4 is coated on the photoresist. Each irradiation area SA on the wafer 5C is sequentially copied while the screens are connected, and development and etching are performed to form a coating circuit pattern P5C. Furthermore, after repeating the exposure steps and pattern formation steps, After the cutting step and the wire bonding step, the desired element can be manufactured. Next, the mask manufacturing apparatus of this example will be described with reference to FIGS. 6 and 7. FIG. 6 shows the use of a substrate for manufacturing a working mask. In the optical projection exposure device in this figure, during exposure, the fly-eye lens (or rod-shaped integrator) used for the light source and illumination uniformity is used for illumination. aperture), The illumination optical system 12 constituted by a condenser lens system exposes exposure light to a main reticle RC on a reticle plate 10. The main reticle RC is, for example, a reticle in FIG. 3 (B) or FIG. 4 (B). Also, as the exposure light, you can use KrF excimer laser light (wavelength 248nm), ArF excimer laser light (wavelength I93nm), F2 laser light (wavelength 16 (please read the precautions on the back before Λ 'installation). — I: ¼ write this page) -ia-line. This paper size is applicable to China National Standard (CNS) A4 (210 X 297 public love) A7 B7 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention) 157nm), high-order harmonics of solid lasers, or ultraviolet light with a wavelength of about 100 ~ 400nm, such as the i-line (wavelength 365nm) of a mercury lamp. The image of the pattern of the main reticle RC in the lighting field set by the reticle visor of the illumination optical system 12 is transmitted through the projection optical system 15 to reduce the magnification 1/1 / (1 / yS is, for example, 1/4, 1/5, etc.) is copied on a mask substrate 1E composed of a wafer having a surface coated with a photoresist as a photosensitive film. The projection optical system 15 in this example is a telecentric refractive system on both sides, but in addition to this, a reflective refractive system including a concave mirror or the like may be used. In the following, the Z-axis is taken on the optical axis AX parallel to the projection optical system 15, the X-axis is taken parallel to the paper surface of FIG. 6 in a plane perpendicular to the z-axis, and the Y-axis is taken perpendicular to the paper surface of FIG. 6. . First, a reticle correction microscope (RA microscope) 11 is disposed near the pair of sides facing the main reticle RC, and the RA microscope 11 is used to measure a correction mark (not shown) on the reticle RC. ), The main reticle plate RC is positioned relative to the mask substrate 1E in the XY plane by driving the reticle plate base 10 according to the measurement result. On the other hand, the photomask substrate 1E is held by a substrate holder (not shown) in a vacuum adsorption manner (or three-point support without adsorption). This substrate holder is fixed on the sample table 17 and the sample table 17 is moved. It is freely arranged on the sample base 20. The sample base 20 positions the sample base 17 in the X direction and the Y direction by a linear motor, for example. In addition, in the photomask substrate 1E, in order to copy the reduced images of the respective patterns formed on the plurality of main graticule plates RC to RG while sequentially connecting the screens, the main graticule plates RC to RG must be accurately performed. And the positioning of the mask substrate 1E. Therefore, it is in the test 17 ~ -------- Order --------- Line γ (Please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) A7 B7 5. Description of the invention (〖t) The moving mirror 18 is fixed on the upper part of the material table 17, and the X coordinate, Y coordinate and the coordinate of the sample table 17 are measured by the moving mirror 18 and the laser interferometer 19. The rotation angle is measured based on this to control the sample base 20. Furthermore, by using an autofocus sensor (not shown) to "measure the focus position of the photomask substrate 1E (position on the optical axis AX direction)", the sample stage 17 can control the photomask 1E to control the focus position and tilt angle of the photomask substrate 1E. The surface of the substrate 1E coincides with the image plane of the projection optical system 15. Furthermore, in the present example, a frame-shaped main marking plate library 14 is arranged on the side of the marking plate table 10, and a main marking plate is arranged in a support plate arranged in two directions in the main marking plate library 14 RC ~ RG. On these main graticule plates RC to RG, there are formed, for example, a pattern in which a part of the mother pattern 6 dividing the mother pattern 6 in FIG. 8 or a plurality of types of IP portions are formed. Therefore, the number of main marking boards RC ~ RG is not limited to five, and can be increased or decreased as required. The main marking plate library 14 ′ is freely supported in the Z direction by a sliding device (not shown), and is arranged between the marking plate table 10 and the main marking plate library 14 so as to be rotatable and movable within a predetermined range in the Z direction.之 标 线 板载 器 13。 The marking line plate carrier 13. After adjusting the position in the Z direction of the main marking plate library 14 by a sliding device, the marking plate holder 13 is used between the desired supporting plate and the marking plate platform 10 in the main marking plate library 14. It is configured to carry out desired conveyance of the main marking boards RC to RG. In this example, in order to continuously manufacture a plurality of work masks, a mask substrate mounter 21 for transporting the mask substrates IE and 1F for the work mask is arranged near the sample base 20. The photomask substrate mounter 21 is formed on the surface holding the photomask substrate by vacuum suction, for example, so as not to deform the photomask substrate IE, 1F having a stripe structure on the reverse side, and is formed on the surface holding the photomask substrate. For example, the vacuum suction holes that match the position of the opposite side of the photomask substrate. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) -------------, installed- -(Please read the precautions on the back before filling out this page) 15J · Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Online Economics _____ Β7_ V. Description of the Invention (,)). This also applies to a substrate holder (not shown) on the sample stand 17. Furthermore, in order to position and expose the reduced image of the mother pattern on the main reticle RC and the thin film portion 1Ea (see FIG. 7) formed on the reverse side of the mask substrate 1E, the exposure device of this example is provided with Correction optics 16. FIG. 7 shows the vicinity of the correction optical system 16 detected on the reverse illuminated surface of this example. In FIG. 7, the wavelength of the correction illumination optical system composed of the light source 22 and the condenser lens 23 provided in the sample table 17 is shown. Near infrared light of about 700 to 100 nm is irradiated from the reverse surface of the mask substrate 1E, and the transmitted light is detected by, for example, a correction optical system 16 composed of an imaging system. Since the material of the mask substrate 1E is a silicon wafer, since the near-infrared light has a certain degree of permeability to silicon, the intensity of the transmitted light depends on the thickness of the mask substrate 1E, that is, the illumination area on the reverse side of the mask substrate 1E is The thin film portion 1Ea or the stripe portion 1Eb varies. Therefore, based on the intensity of the transmitted light image, the position of the thin film portion 1Ea of the mask substrate 1E is detected, that is, the reduced image of the mother pattern and the thin film portion 1Ea can be positioned for exposure. Returning to FIG. 6, when copying the mother pattern on the main reticle RC ~ RG to the photomask substrate 1E, first use the RA microscope 12 to correct the main reticle RC. By moving the sample table 17, the photomask substrate The predetermined irradiation area on 1E moves to the exposure area of the projection optical system 15. In addition, the "reticle shading plate of the illumination optical system 12" is adjusted so as to illuminate only the desired pattern on the main reticle RC. Then, the pattern on the main reticle RC is illuminated with the illumination optical system 12, and the reduced image of the pattern is projected and exposed on the mask substrate 1E through the projection optical system 5. Then, suppose that the images of the patterns in different areas on the main reticle RC are 'copied' in different irradiation areas on the photomask substrate 1E. 19 This paper size applies to Chinese national standards (CNS> A4 specification (210 X 297 public love)) Printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of Invention (α), when the exposure to an irradiation field is over, 'adjust the reticle shading plate of the lighting optics 12 to make the reticle on the main reticle RC The pattern of the next copy object can be illuminated, and the sample table 17 is moved to move the next irradiation area above and below the photomask substrate 1E to the exposure area of the projection optics 15 'in a step and repeat manner to repeat the main reticle RC The exposure operation of the patterned image is performed to the predetermined irradiation area on the mask substrate 1E. When the exposure of the pattern on the main reticle RC is finished, the sample table 17 is moved up and down the mask substrate 1E. The irradiation area is moved to the exposure area of the projection optical system 15. At the same time, the main reticle RC on the reticle plate 10 is returned to the main reticle plate library 14 through the reticle holder 13 'Next Copy object The main reticle RD is placed on the reticle plate 10 through the reticle holder 13. After correction, the reduced image of the main reticle RD is projected and exposed on the mask substrate through the projection optical system 15 For the corresponding irradiation areas on 1E, the following stepwise and repetitive methods are used to expose the reduced images of the main graticule plates RE to RG corresponding to the remaining irradiation areas on the mask substrate 1E. Then, for all After the exposure in the irradiated area is completed, the photoresist coated on the photomask substrate 1E is developed, and through the engraving step, photoresist peeling step, etc., the main reticle RC is formed on the photomask substrate 1E in a state of screen connection. Each pattern on ~ RG. In addition, in order to use an electron beam exposure device, a mask mark for correcting the mask substrate 1E when the pattern of the mask substrate 1E is reproduced on a wafer, and to be formed in the next step for inspection. The wafer marks at the positions of the patterns on the wafer are formed in advance on the photomask substrate 1E (working photomask), and at least one of the main reticle plates rc to RG is formed with such correction marks. 20 --- --------- install -------- order --------- line Ν ( Read the notes on the back before you write this page) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) A7 B7 V. Description of Invention (θ) Employees ’Cooperatives, Bureau of Intellectual Property, Ministry of Economic Affairs For printing, in this example, a single exposure type projection exposure device is used. However, a scanning exposure type reduction projection exposure device such as a step and scan method can also be used. In addition, a reduced image of the pattern of the main reticle is copied. When used on a substrate for a working mask, a reduction and copying device other than an optical method, such as a low-precision electron beam exposure device, may be used. However, when using an optical reduction and copying device, established manufacturing techniques and The manufacturing of the main reticle by using a glass substrate for drawing error correction technology has the advantage that the main reticle can be easily manufactured, inspected, and corrected. Before forming the mask pattern on the working mask, it is preferable to form a thin film portion on the reverse side of the mask substrate of the working mask in advance. This is because the thin film portion is formed after the mask pattern is formed. The mask substrate may be deformed due to the stress generated when the thin film portion is formed, and the mask pattern may be displaced. The deformation (stress deformation) of the working mask is caused not only by the formation of the thin film portion but also by the formation of the mask pattern. Especially in the case where the density (thickness) of the mask pattern formed on a thin film portion formed by a rectangular region within 1 mm or a quadrangular region within 1 mm is large, the mask follows this mask. The density difference of the pattern is caused by stress deformation in the thin film portion, and the formed mask pattern may deviate from a desired position. The stress deformation of the working mask due to the density difference of this pattern can be estimated by simulation based on the mask pattern data. Therefore, when manufacturing the main reticle, the amount of positional deviation of the mask pattern due to stress deformation is estimated in advance, and the formation position of the mother pattern (partial mother pattern) on the main reticle is deviated from the established amount in advance. Can correct the mask 21 t paper size caused by the density difference of the pattern. Applicable to China National Standard (CNS) A4 (210 x 297 mm). Please read the back first.
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訂 線 A7 _B7__ 五、發明說明（/) 圖案的位置偏離。 亦即，主標線板上之母圖案(部分母圖案）中包含有對 應於工作光罩薄膜部之複數的子域(Subfield)及對應於條狀 部之邊界區域，爲了補償子域內之圖案密度的非對稱性所 產生之應力變形，於該子域內將圖案之一部分的形成位置 自既定之設計位置偏離既定量，換句話說，藉使圖案之一 部分相對的偏離其他部分，即能修正因圖案之密度差所產 生之工作光罩之光罩圖案的位置偏離。再者，由於此修正 子域將產生變形。 此外，並不需要對母圖案(部分母圖案）內之全部的子 域之形成位置進行修正，只要修正肇因於非對稱性之應力 變形，亦即，僅需針對圖案之一部份的位移超過容値之子 域進行形成位置之修正即可。 再者，爲了也能修正因使用於工作光罩之製造的投影 曝光裝置之投影光學系的投影失真所產生之光罩圖案的位 置偏離量，最好能將主標線板上之母圖案的形成位置偏離 既定量。 經濟部智慧財產局員工消费合作社印製 本例中，係如上述般將光罩圖案之位置偏離，於主標 線板形成母圖案之階段，亦即在形成之圖案較大之階段即 進行修正，而能以更高之精密度進行位置修正》 此外，上述實施形態之光罩製造方法，不僅能適用於 製造半導體元件，例如，亦能廣泛的適用於以液晶顯示元 件圖案對方形玻璃板曝光之情形，及製造CCD等攝像元件 ，電漿顯示器元件，或薄膜磁氣頭等之情形中。 22 本紙張尺度適用辛國國家標準（CNS)A4規格（210 X 297公釐） A7 B7 五、發明說明（V() 再者，作爲工作光罩製造用之光學式投影曝光裝置的 曝光用照明光，亦可使用將自DFB半導體雷射或光纖雷射 振盪出之紅外領域或可視領域的單一波長雷射，以滲雜餌 (Er)(或餌及鏡(Yb)兩者)之光纖擴大器來增幅，且使用非線 性光學結晶將波長變換於紫外光之高次諧波。例如，若將 單一波長雷射之振盪波長定爲1.544〜1.553 #m範圍內時， 能得到193〜194nm範圍內之8倍高次諧波，亦即，能得到 與ArF準分子雷射幾乎相同波長之紫外光，若將振盪波長 定爲1.57〜1.58"ιη之範圍內時，能得到157〜158nm範圔 內之10倍高次諧波，亦即，能得到與化雷射幾乎相同波 長之紫外光。 又，做爲工作光罩製造用之光學式投影曝光裝置的曝 光用照明光，於使用準分子雷射等之遠紫外線時，做爲投 影光學系等之玻璃材，係使用能穿透石英（Si〇2)及螢石 (CaF〇等之遠紫外線的材料。又，投影光學系爲折射系、反 射系、及組合折射透鏡及凹面鏡等之反射光學元件構成的 反射折射系（向下雙屈光學系）之任一者皆可。做爲反射折 射系，例如揭示於美國專利第5788229號中，能使用不彎 曲複數之折射光學元件及二個反射光學元件(至少一方爲凹 面鏡)而一直線地配置於延伸之光軸上的光學系。再者，於 本國際申請所指定之指定國或選擇之選擇國國內法令允許 範圍’沿用此美國專利之揭示以做爲本文記載之一部分。 此外’將由複數之透鏡構成之照明光學系，投影光學 系，組裝入曝光裝置本身做光學調整，同時將由多數之機 23 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公笼） 經濟部智慧財產局員工消费合作社印製 A7 B7 五、發明說明（V>) 械零件構成之標線板台及試料基台(包括反面照明表面檢出 之校正光學系16等)組裝於曝光裝置本體後，連接配線及 配管，再藉綜合調整(電氣調整、動作確認等），即能製造 上述實施形態之工作光罩製造用光學式投影曝光裝置。再 者，投影曝光裝置之製造最好是在溫度及潔淨度等皆有管 理之無塵室內進行。 再者’本發明不限於上述之實施形態，於不超出本發 明之要旨的範圍’可有種種之構成。此外，包含說明書、 專利申請範圍、圖式、及槪要等，皆完全將1998年10月 28日提出之日本國專利申請第10-306626號之全部內容引 用於此。 【產業上利用之可能性】 根據本發明之光罩製造方法，做爲主光罩之基板，能 使用例如光學式之縮小投影型曝光裝置用的玻璃基板。此 時，因光罩之缺陷檢查及缺陷修正技術等已確立，即使產 生誤差，亦能在短時間、容易地修正描畫誤差。因此，例 如，相較於以電子束描畫裝置直接將圖案描畫於電子束複 製裝置用之光罩基板，能減低包括至修正之全體的製造成 本，縮短光罩製造時間。此外，由前述主光罩例如使用光 學式投影曝光裝置，僅重複曝光複製，能製造複數片光罩 ，相較於以電子束描畫裝置描畫複數片之光罩圖案，能大 幅地縮短製造全部的光罩所需之時間，能大幅降低製造成 本。 其次，根據本發明之光罩製造裝置，能實施本發明之 24 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------裝--------訂---------線^' (請先閲讀背面之注意事項再填寫本頁) A7 _B7_ 五、發明說明（νΊ)) 光罩製造方法，由該主光罩能製造複數光罩，相較於以電 子束描畫裝置直接描畫複數片之光罩圖案，能縮短光罩製 造所需時間，以更低的成本製造光罩。 其次，根據本發明之元件製造方法，相較於以電子束 描畫裝置製造複數片之工作光罩，能縮短光罩製造所需時 間，進而縮短元件製造所需時間，以更低的成本製造元件 — — — — — — — — — — — —II · I I (請先閱讀背面之注意事項再Ρ寫本頁) .線· 經濟部智慧財產局員工消費合作杜印製 25 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）Order line A7 _B7__ 5. Description of the invention (/) The position of the pattern is off. That is, the mother pattern (part of the mother pattern) on the main reticle includes a plurality of subfields corresponding to the film portion of the working mask and a border region corresponding to the stripe portion. In order to compensate for the The stress and deformation caused by the asymmetry of the pattern density can deviate the formation position of a part of the pattern from a predetermined design position within the subdomain by a predetermined amount. In other words, if one part of the pattern deviates from the other part, it can Correct the position deviation of the mask pattern of the working mask caused by the density difference of the pattern. Furthermore, due to this correction, the subdomain will be deformed. In addition, there is no need to modify the formation position of all the sub-fields in the mother pattern (part of the mother pattern), as long as the stress deformation due to asymmetry is corrected, that is, only a part of the displacement of the pattern needs to be corrected Correct the formation position beyond the child domain of Rong Hong. In addition, in order to also correct the positional deviation of the mask pattern caused by the projection distortion of the projection optical system of the projection exposure device used in the manufacture of the working mask, it is desirable that the The formation position deviates from the given amount. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs in this example, the position of the mask pattern is deviated as described above, and the main pattern is formed at the stage of the mother pattern, that is, the stage of the larger pattern is corrected. In addition, the position correction can be performed with higher precision. In addition, the mask manufacturing method of the above embodiment is not only applicable to the manufacture of semiconductor elements, but also widely applicable to the exposure of square glass plates with liquid crystal display element patterns. In the case of imaging devices such as CCDs, plasma display devices, or thin film magnetic heads, etc. 22 This paper size is applicable to the National Standard (CNS) A4 (210 X 297 mm) A7 B7 V. Description of the invention (V () In addition, it is used as the exposure lighting of the optical projection exposure device used for the manufacture of working masks. For light, a single-wavelength laser in the infrared or visible field oscillating from a DFB semiconductor laser or fiber laser can also be used to expand the fiber with the bait (Er) (or both bait and mirror (Yb)) Using a non-linear optical crystal to convert the wavelength to the higher harmonics of ultraviolet light. For example, if the oscillation wavelength of a single-wavelength laser is set to a range of 1.544 ~ 1.553 #m, a range of 193 ~ 194nm can be obtained 8 times higher harmonics, that is, ultraviolet light with almost the same wavelength as ArF excimer laser can be obtained. If the oscillation wavelength is set within the range of 1.57 ~ 1.58 " ιη, the range of 157 ~ 158nm can be obtained 10 times higher harmonics within the range, that is, ultraviolet light with almost the same wavelength as that of chemical lasers can be obtained. In addition, as the exposure illumination light of the optical projection exposure device used for the manufacture of working masks, In the case of extreme ultraviolet rays such as molecular lasers, Glass materials such as shadow optics are materials that can penetrate far ultraviolet rays such as quartz (Si〇2) and fluorite (CaF〇). The projection optics are refractive, reflective, and combined refractive lenses and concave mirrors. Either a reflective refracting system (a downward birefringent optical system) constituted by a reflective optical element of the same type. As a reflective refracting system, for example, disclosed in US Patent No. 5,788,229, a plurality of refractive optical elements that are not curved and An optical system in which two reflective optical elements (at least one of which is a concave mirror) are arranged in a line on the extended optical axis. Furthermore, in the scope permitted by the domestic laws of the designated or selected country specified in this international application, the United States continues to use this United States The patent is disclosed as a part of this document. In addition, 'illumination optics and projection optics composed of a plurality of lenses are assembled into the exposure device itself to make optical adjustments, and at the same time, most of the machines will be 23 paper standards applicable to Chinese national standards ( CNS) A4 size (210 X 297 male cage) A7 B7 printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Description of the invention (V >) The reticle plate and sample base (including the correction optical system 16 detected from the reverse illuminated surface) are assembled into the exposure device body, and then the wiring and piping are connected, and then integrated adjustment (electric adjustment, operation confirmation, etc.), That is, the optical projection exposure device for manufacturing the working mask of the above embodiment can be manufactured. Furthermore, it is preferable to manufacture the projection exposure device in a clean room where temperature and cleanliness are managed. Furthermore, the present invention does not It is limited to the above-mentioned embodiments, and can have various structures within the scope not exceeding the gist of the present invention. In addition, including the description, the scope of patent applications, drawings, and summary, etc., all of which were filed on October 28, 1998 The entire contents of Japanese Patent Application No. 10-306626 are incorporated herein by reference. [Possibility of industrial use] According to the mask manufacturing method of the present invention, as the substrate of the main mask, for example, a glass substrate for an optical reduction projection type exposure device can be used. At this time, since defect inspection and defect correction techniques have been established, even if an error occurs, the drawing error can be easily corrected in a short time. Therefore, for example, it is possible to reduce the entire manufacturing cost including correction, and shorten the mask manufacturing time, as compared with the case where the pattern is directly drawn on the mask substrate for the electron beam copying device by the electron beam drawing device. In addition, by using the above-mentioned main mask, for example, an optical projection exposure device can be used to repeat the exposure and copying, and multiple masks can be manufactured. Compared with the electron beam drawing device, multiple mask patterns can be manufactured, which can greatly shorten the entire manufacturing process. The time required for the photomask can significantly reduce manufacturing costs. Secondly, according to the photomask manufacturing device of the present invention, the 24 paper sizes of the present invention can implement the Chinese National Standard (CNS) A4 specification (210 X 297 mm). ------- Order --------- Line ^ '(Please read the precautions on the back before filling in this page) A7 _B7_ V. Description of the Invention (νΊ) The main photomask can produce a plurality of photomasks, which can shorten the time required for photomask fabrication and make photomasks at a lower cost than directly drawing a plurality of photomask patterns with an electron beam drawing device. Secondly, according to the device manufacturing method of the present invention, compared with manufacturing a plurality of working photomasks with an electron beam drawing device, the time required for photomask manufacturing can be shortened, and the time required for component manufacturing can be shortened, and components can be manufactured at a lower cost — — — — — — — — — — — — — II · II (please read the notes on the back before writing this page). Line · Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Co-operation 25 Standard (CNS) A4 specification (210 X 297 mm)