TW364204B - Method for producing semiconductor capacitor of the semiconductor and its eletrode plate - Google Patents

Method for producing semiconductor capacitor of the semiconductor and its eletrode plate

Info

Publication number
TW364204B
TW364204B TW086119282A TW86119282A TW364204B TW 364204 B TW364204 B TW 364204B TW 086119282 A TW086119282 A TW 086119282A TW 86119282 A TW86119282 A TW 86119282A TW 364204 B TW364204 B TW 364204B
Authority
TW
Taiwan
Prior art keywords
semiconductor
eletrode
plate
capacitor
producing
Prior art date
Application number
TW086119282A
Other languages
Chinese (zh)
Inventor
Ting-Shian Jian
Shiau-Yu Wang
Jia-Shyong Cheng
Original Assignee
Nanya Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanya Technology Corp filed Critical Nanya Technology Corp
Priority to TW086119282A priority Critical patent/TW364204B/en
Priority to JP13718398A priority patent/JPH11186253A/en
Application granted granted Critical
Publication of TW364204B publication Critical patent/TW364204B/en

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

A method for producing semiconductor capacitor and its electrode plate comprises the steps of: (a) providing a substrate; (b) forming a conductive layer on the substrate surface; (c) forming a photoresist on the surface of the conductive layer; (d) the photoresist layer is subject to a light interfering exposure process to form a given pattern through development; (e) the given pattern of the photoresist layer is transferred to the conductive layer to form the electrode plate of a semiconductor capacitor.
TW086119282A 1997-12-19 1997-12-19 Method for producing semiconductor capacitor of the semiconductor and its eletrode plate TW364204B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW086119282A TW364204B (en) 1997-12-19 1997-12-19 Method for producing semiconductor capacitor of the semiconductor and its eletrode plate
JP13718398A JPH11186253A (en) 1997-12-19 1998-05-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086119282A TW364204B (en) 1997-12-19 1997-12-19 Method for producing semiconductor capacitor of the semiconductor and its eletrode plate

Publications (1)

Publication Number Publication Date
TW364204B true TW364204B (en) 1999-07-11

Family

ID=21627436

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086119282A TW364204B (en) 1997-12-19 1997-12-19 Method for producing semiconductor capacitor of the semiconductor and its eletrode plate

Country Status (2)

Country Link
JP (1) JPH11186253A (en)
TW (1) TW364204B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001267555A (en) 2000-03-22 2001-09-28 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacturing method
JP2004152962A (en) 2002-10-30 2004-05-27 Oki Electric Ind Co Ltd Method for manufacturing semiconductor device
EP2011763B1 (en) * 2007-07-03 2011-09-14 EM Microelectronic-Marin SA Method of producing micromechanical parts with crystalline material
JP2009016848A (en) * 2008-07-14 2009-01-22 Panasonic Corp Semiconductor device, and manufacturing method thereof

Also Published As

Publication number Publication date
JPH11186253A (en) 1999-07-09

Similar Documents

Publication Publication Date Title
CA1250669A (en) Lithographic image size reduction
EP0397988A3 (en) Plasma processing with metal mask integration
MY139535A (en) Process for producing an image using a first minimum bottom antireflective coating composition
EP0697377A3 (en) Process for production of glass substrate coated with finely patterned Nesa glass membrane
TW364204B (en) Method for producing semiconductor capacitor of the semiconductor and its eletrode plate
TW337032B (en) Charged beam lithography
KR100387456B1 (en) Method for fabricating semiconductor device
EP0343962A3 (en) Manufacturing electronic devices
PT95435A (en) PRODUCTION PROCESS OF A DEPOSITED MOVIE AND A SEMICONDUCTIVE DEVICE
TW331699B (en) Fabricating a surface laminar circuit
EP0517923A4 (en) Method of forming minute resist pattern
TW371327B (en) Phase-shifting mask (PSM) and method for making the same
KR970009975B1 (en) Patterning method of photoresist for charge storage electrode in the semiconductor device
EP0232148A3 (en) Photoelectric converting device and method for producing the same
TW358170B (en) Semi-transparent phase shift mask structure and the manufacturing method
JPS57107033A (en) Formation of minute pattern
TW332331B (en) The method for forming DRAM and peripheral contact
KR970003692B1 (en) Method of manufacture of compound semiconductor device
ES2006071A6 (en) Cladding of substrates with thick metal circuit patterns
TW290708B (en) The manufacturing method of phase-shifted photo-mask
TW351855B (en) Lead frame manufacturing method
KR960008525B1 (en) Manufacturing method of metal wiring layer pattern
TW263599B (en) Method for preventing etching conductive layer from forming notching
JPS57118641A (en) Lifting-off method
KR960012645B1 (en) Method for forming the multilayer wiring of the semiconductor device

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent