TW364204B - Method for producing semiconductor capacitor of the semiconductor and its eletrode plate - Google Patents
Method for producing semiconductor capacitor of the semiconductor and its eletrode plateInfo
- Publication number
- TW364204B TW364204B TW086119282A TW86119282A TW364204B TW 364204 B TW364204 B TW 364204B TW 086119282 A TW086119282 A TW 086119282A TW 86119282 A TW86119282 A TW 86119282A TW 364204 B TW364204 B TW 364204B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor
- eletrode
- plate
- capacitor
- producing
- Prior art date
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
A method for producing semiconductor capacitor and its electrode plate comprises the steps of: (a) providing a substrate; (b) forming a conductive layer on the substrate surface; (c) forming a photoresist on the surface of the conductive layer; (d) the photoresist layer is subject to a light interfering exposure process to form a given pattern through development; (e) the given pattern of the photoresist layer is transferred to the conductive layer to form the electrode plate of a semiconductor capacitor.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086119282A TW364204B (en) | 1997-12-19 | 1997-12-19 | Method for producing semiconductor capacitor of the semiconductor and its eletrode plate |
JP13718398A JPH11186253A (en) | 1997-12-19 | 1998-05-19 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086119282A TW364204B (en) | 1997-12-19 | 1997-12-19 | Method for producing semiconductor capacitor of the semiconductor and its eletrode plate |
Publications (1)
Publication Number | Publication Date |
---|---|
TW364204B true TW364204B (en) | 1999-07-11 |
Family
ID=21627436
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086119282A TW364204B (en) | 1997-12-19 | 1997-12-19 | Method for producing semiconductor capacitor of the semiconductor and its eletrode plate |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPH11186253A (en) |
TW (1) | TW364204B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001267555A (en) | 2000-03-22 | 2001-09-28 | Matsushita Electric Ind Co Ltd | Semiconductor device and its manufacturing method |
JP2004152962A (en) | 2002-10-30 | 2004-05-27 | Oki Electric Ind Co Ltd | Method for manufacturing semiconductor device |
EP2011763B1 (en) * | 2007-07-03 | 2011-09-14 | EM Microelectronic-Marin SA | Method of producing micromechanical parts with crystalline material |
JP2009016848A (en) * | 2008-07-14 | 2009-01-22 | Panasonic Corp | Semiconductor device, and manufacturing method thereof |
-
1997
- 1997-12-19 TW TW086119282A patent/TW364204B/en not_active IP Right Cessation
-
1998
- 1998-05-19 JP JP13718398A patent/JPH11186253A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
JPH11186253A (en) | 1999-07-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK4A | Expiration of patent term of an invention patent |