TW363226B - Heat treatment method for silicon wafer - Google Patents
Heat treatment method for silicon waferInfo
- Publication number
- TW363226B TW363226B TW084112414A TW84112414A TW363226B TW 363226 B TW363226 B TW 363226B TW 084112414 A TW084112414 A TW 084112414A TW 84112414 A TW84112414 A TW 84112414A TW 363226 B TW363226 B TW 363226B
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- hydrogen
- heat treatment
- mechanical strength
- oxygen concentration
- Prior art date
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14563094A JP3458342B2 (ja) | 1994-06-03 | 1994-06-03 | シリコンウェーハの製造方法およびシリコンウェーハ |
Publications (1)
Publication Number | Publication Date |
---|---|
TW363226B true TW363226B (en) | 1999-07-01 |
Family
ID=15389455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW084112414A TW363226B (en) | 1994-06-03 | 1995-11-22 | Heat treatment method for silicon wafer |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP3458342B2 (ja) |
TW (1) | TW363226B (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5994761A (en) * | 1997-02-26 | 1999-11-30 | Memc Electronic Materials Spa | Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
SG151096A1 (en) | 1997-04-09 | 2009-04-30 | Memc Electronic Materials | Low defect density, ideal oxygen precipitating silicon |
US6828690B1 (en) | 1998-08-05 | 2004-12-07 | Memc Electronic Materials, Inc. | Non-uniform minority carrier lifetime distributions in high performance silicon power devices |
US6191010B1 (en) | 1998-09-02 | 2001-02-20 | Memc Electronic Materials, Inc. | Process for preparing an ideal oxygen precipitating silicon wafer |
US6236104B1 (en) | 1998-09-02 | 2001-05-22 | Memc Electronic Materials, Inc. | Silicon on insulator structure from low defect density single crystal silicon |
US6336968B1 (en) | 1998-09-02 | 2002-01-08 | Memc Electronic Materials, Inc. | Non-oxygen precipitating czochralski silicon wafers |
US6361619B1 (en) | 1998-09-02 | 2002-03-26 | Memc Electronic Materials, Inc. | Thermally annealed wafers having improved internal gettering |
WO2000022198A1 (en) | 1998-10-14 | 2000-04-20 | Memc Electronic Materials, Inc. | Thermally annealed, low defect density single crystal silicon |
US6284384B1 (en) | 1998-12-09 | 2001-09-04 | Memc Electronic Materials, Inc. | Epitaxial silicon wafer with intrinsic gettering |
US20030051656A1 (en) | 1999-06-14 | 2003-03-20 | Charles Chiun-Chieh Yang | Method for the preparation of an epitaxial silicon wafer with intrinsic gettering |
US6339016B1 (en) | 2000-06-30 | 2002-01-15 | Memc Electronic Materials, Inc. | Method and apparatus for forming an epitaxial silicon wafer with a denuded zone |
US6599815B1 (en) | 2000-06-30 | 2003-07-29 | Memc Electronic Materials, Inc. | Method and apparatus for forming a silicon wafer with a denuded zone |
JP2004537161A (ja) | 2001-04-11 | 2004-12-09 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 高抵抗率czシリコンにおけるサーマルドナー生成の制御 |
KR100399946B1 (ko) * | 2001-06-30 | 2003-09-29 | 주식회사 하이닉스반도체 | 유동성 절연막의 열처리 방법 |
US6955718B2 (en) | 2003-07-08 | 2005-10-18 | Memc Electronic Materials, Inc. | Process for preparing a stabilized ideal oxygen precipitating silicon wafer |
KR100695004B1 (ko) * | 2005-11-01 | 2007-03-13 | 주식회사 하이닉스반도체 | 반도체 소자의 산화막 형성 방법 |
US7485928B2 (en) | 2005-11-09 | 2009-02-03 | Memc Electronic Materials, Inc. | Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering |
JP5572091B2 (ja) * | 2008-08-08 | 2014-08-13 | Sumco Techxiv株式会社 | 半導体ウェーハの製造方法 |
-
1994
- 1994-06-03 JP JP14563094A patent/JP3458342B2/ja not_active Expired - Lifetime
-
1995
- 1995-11-22 TW TW084112414A patent/TW363226B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP3458342B2 (ja) | 2003-10-20 |
JPH07335657A (ja) | 1995-12-22 |
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