TW363226B - Heat treatment method for silicon wafer - Google Patents

Heat treatment method for silicon wafer

Info

Publication number
TW363226B
TW363226B TW084112414A TW84112414A TW363226B TW 363226 B TW363226 B TW 363226B TW 084112414 A TW084112414 A TW 084112414A TW 84112414 A TW84112414 A TW 84112414A TW 363226 B TW363226 B TW 363226B
Authority
TW
Taiwan
Prior art keywords
wafer
hydrogen
heat treatment
mechanical strength
oxygen concentration
Prior art date
Application number
TW084112414A
Other languages
English (en)
Inventor
Masahiko Yamamoto
Original Assignee
Komatsu Denshi Kinzoku Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Denshi Kinzoku Kk filed Critical Komatsu Denshi Kinzoku Kk
Application granted granted Critical
Publication of TW363226B publication Critical patent/TW363226B/zh

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  • Crystals, And After-Treatments Of Crystals (AREA)
TW084112414A 1994-06-03 1995-11-22 Heat treatment method for silicon wafer TW363226B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14563094A JP3458342B2 (ja) 1994-06-03 1994-06-03 シリコンウェーハの製造方法およびシリコンウェーハ

Publications (1)

Publication Number Publication Date
TW363226B true TW363226B (en) 1999-07-01

Family

ID=15389455

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084112414A TW363226B (en) 1994-06-03 1995-11-22 Heat treatment method for silicon wafer

Country Status (2)

Country Link
JP (1) JP3458342B2 (zh)
TW (1) TW363226B (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5994761A (en) * 1997-02-26 1999-11-30 Memc Electronic Materials Spa Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
SG151096A1 (en) 1997-04-09 2009-04-30 Memc Electronic Materials Low defect density, ideal oxygen precipitating silicon
US6828690B1 (en) 1998-08-05 2004-12-07 Memc Electronic Materials, Inc. Non-uniform minority carrier lifetime distributions in high performance silicon power devices
US6191010B1 (en) 1998-09-02 2001-02-20 Memc Electronic Materials, Inc. Process for preparing an ideal oxygen precipitating silicon wafer
US6236104B1 (en) 1998-09-02 2001-05-22 Memc Electronic Materials, Inc. Silicon on insulator structure from low defect density single crystal silicon
US6336968B1 (en) 1998-09-02 2002-01-08 Memc Electronic Materials, Inc. Non-oxygen precipitating czochralski silicon wafers
US6361619B1 (en) 1998-09-02 2002-03-26 Memc Electronic Materials, Inc. Thermally annealed wafers having improved internal gettering
WO2000022198A1 (en) 1998-10-14 2000-04-20 Memc Electronic Materials, Inc. Thermally annealed, low defect density single crystal silicon
US6284384B1 (en) 1998-12-09 2001-09-04 Memc Electronic Materials, Inc. Epitaxial silicon wafer with intrinsic gettering
US20030051656A1 (en) 1999-06-14 2003-03-20 Charles Chiun-Chieh Yang Method for the preparation of an epitaxial silicon wafer with intrinsic gettering
US6339016B1 (en) 2000-06-30 2002-01-15 Memc Electronic Materials, Inc. Method and apparatus for forming an epitaxial silicon wafer with a denuded zone
US6599815B1 (en) 2000-06-30 2003-07-29 Memc Electronic Materials, Inc. Method and apparatus for forming a silicon wafer with a denuded zone
JP2004537161A (ja) 2001-04-11 2004-12-09 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 高抵抗率ｃｚシリコンにおけるサーマルドナー生成の制御
KR100399946B1 (ko) * 2001-06-30 2003-09-29 주식회사 하이닉스반도체 유동성 절연막의 열처리 방법
US6955718B2 (en) 2003-07-08 2005-10-18 Memc Electronic Materials, Inc. Process for preparing a stabilized ideal oxygen precipitating silicon wafer
KR100695004B1 (ko) * 2005-11-01 2007-03-13 주식회사 하이닉스반도체 반도체 소자의 산화막 형성 방법
US7485928B2 (en) 2005-11-09 2009-02-03 Memc Electronic Materials, Inc. Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering
JP5572091B2 (ja) * 2008-08-08 2014-08-13 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体ウェーハの製造方法

Also Published As

Publication number Publication date
JP3458342B2 (ja) 2003-10-20
JPH07335657A (ja) 1995-12-22

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