TW345678B - Apparatus for fabricating semiconductor device and method for fabricating polysilicon film using the same - Google Patents

Apparatus for fabricating semiconductor device and method for fabricating polysilicon film using the same

Info

Publication number
TW345678B
TW345678B TW086107830A TW86107830A TW345678B TW 345678 B TW345678 B TW 345678B TW 086107830 A TW086107830 A TW 086107830A TW 86107830 A TW86107830 A TW 86107830A TW 345678 B TW345678 B TW 345678B
Authority
TW
Taiwan
Prior art keywords
fabricating
chambers
semiconductor device
wafer transfer
same
Prior art date
Application number
TW086107830A
Other languages
English (en)
Inventor
Park Young-Wook
Yoo Cha-Young
Kim Young-Sun
Nam Seung-Hee
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW345678B publication Critical patent/TW345678B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW086107830A 1996-06-08 1997-06-06 Apparatus for fabricating semiconductor device and method for fabricating polysilicon film using the same TW345678B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960020441A KR100200705B1 (ko) 1996-06-08 1996-06-08 반도체 디바이스 제조장치, 제조장치의 공정 조건 조절방법 및 이를 이용한 커패시터 제조방법

Publications (1)

Publication Number Publication Date
TW345678B true TW345678B (en) 1998-11-21

Family

ID=19461182

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086107830A TW345678B (en) 1996-06-08 1997-06-06 Apparatus for fabricating semiconductor device and method for fabricating polysilicon film using the same

Country Status (4)

Country Link
US (2) US6039811A (zh)
JP (1) JP4422217B2 (zh)
KR (1) KR100200705B1 (zh)
TW (1) TW345678B (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100263901B1 (ko) * 1997-10-14 2000-08-16 윤종용 반도체 디바이스 제조 장치, ｈｓｇ-다결정 실리콘막의 제조 방법 및 ｈｓｇ-다결정 실리콘막을 전극으로 포함하는 커패시터의 제조 방법
KR100462237B1 (ko) * 2000-02-28 2004-12-17 주성엔지니어링(주) 기판 냉각장치를 가지는 반도체 소자 제조용 클러스터 장비
JP3607664B2 (ja) * 2000-12-12 2005-01-05 日本碍子株式会社 Ｉｉｉ−ｖ族窒化物膜の製造装置
US6902623B2 (en) * 2001-06-07 2005-06-07 Veeco Instruments Inc. Reactor having a movable shutter
CN100421209C (zh) * 2003-03-07 2008-09-24 东京毅力科创株式会社 衬底处理装置和温度调节装置
KR100585873B1 (ko) 2003-11-03 2006-06-07 엘지.필립스 엘시디 주식회사 폴리실리콘 액정표시소자 및 그 제조방법
JP5575483B2 (ja) * 2006-11-22 2014-08-20 ソイテック Ｉｉｉ−ｖ族半導体材料の大量製造装置
JP5244814B2 (ja) 2006-11-22 2013-07-24 ソイテック 化学気相成長チャンバ用の温度制御されたパージゲート弁を使用した方法、アセンブリ及びシステム
ATE546570T1 (de) * 2006-11-22 2012-03-15 Soitec Silicon On Insulator Verfahren zur epitaktischen abscheidung von einkristallinen iii-v halbleitermaterial
US9481943B2 (en) 2006-11-22 2016-11-01 Soitec Gallium trichloride injection scheme
JP5656184B2 (ja) 2006-11-22 2015-01-21 ソイテック 三塩化ガリウムの噴射方式
WO2008064077A2 (en) * 2006-11-22 2008-05-29 S.O.I.Tec Silicon On Insulator Technologies Methods for high volume manufacture of group iii-v semiconductor materials
US20090223441A1 (en) * 2006-11-22 2009-09-10 Chantal Arena High volume delivery system for gallium trichloride
US9481944B2 (en) 2006-11-22 2016-11-01 Soitec Gas injectors including a funnel- or wedge-shaped channel for chemical vapor deposition (CVD) systems and CVD systems with the same
US7897495B2 (en) * 2006-12-12 2011-03-01 Applied Materials, Inc. Formation of epitaxial layer containing silicon and carbon
US20080138955A1 (en) * 2006-12-12 2008-06-12 Zhiyuan Ye Formation of epitaxial layer containing silicon
US9064960B2 (en) * 2007-01-31 2015-06-23 Applied Materials, Inc. Selective epitaxy process control
US7772074B2 (en) * 2007-10-18 2010-08-10 Applied Materials, Inc. Method of forming conformal silicon layer for recessed source-drain
EP2238275B1 (en) * 2007-12-27 2018-10-03 Exatec, LLC. Multi-pass vacuum coating systems
CN103132027A (zh) * 2011-11-28 2013-06-05 鸿富锦精密工业（深圳）有限公司 真空镀膜设备
CN102618845B (zh) * 2012-04-01 2014-06-11 中微半导体设备(上海)有限公司 具有遮挡板装置的反应器
KR20140015874A (ko) * 2012-07-26 2014-02-07 주식회사 원익아이피에스 기판 처리 유닛 및 이를 구비하는 기판 처리 장치
SG11201606084RA (en) 2014-01-27 2016-08-30 Veeco Instr Inc Wafer carrier having retention pockets with compound radii for chemical vapor deposition systems
JP6285411B2 (ja) * 2015-12-25 2018-02-28 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム

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Publication number Priority date Publication date Assignee Title
JP2927857B2 (ja) * 1990-01-19 1999-07-28 株式会社東芝 基板加熱装置
US5284521A (en) * 1990-09-21 1994-02-08 Anelva Corporation Vacuum film forming apparatus
TW209253B (zh) * 1990-09-21 1993-07-11 Nidden Aneruba Kk
JP2508948B2 (ja) * 1991-06-21 1996-06-19 日本電気株式会社 半導体装置の製造方法
US5494841A (en) * 1993-10-15 1996-02-27 Micron Semiconductor, Inc. Split-polysilicon CMOS process for multi-megabit dynamic memories incorporating stacked container capacitor cells
US5851602A (en) * 1993-12-09 1998-12-22 Applied Materials, Inc. Deposition of high quality conformal silicon oxide thin films for the manufacture of thin film transistors
US5656531A (en) * 1993-12-10 1997-08-12 Micron Technology, Inc. Method to form hemi-spherical grain (HSG) silicon from amorphous silicon
US5453125A (en) * 1994-02-17 1995-09-26 Krogh; Ole D. ECR plasma source for gas abatement
US5658381A (en) * 1995-05-11 1997-08-19 Micron Technology, Inc. Method to form hemispherical grain (HSG) silicon by implant seeding followed by vacuum anneal
US5721171A (en) * 1996-02-29 1998-02-24 Micron Technology, Inc. Method for forming controllable surface enhanced three dimensional objects
US5940713A (en) * 1996-03-01 1999-08-17 Micron Technology, Inc. Method for constructing multiple container capacitor
US5760434A (en) * 1996-05-07 1998-06-02 Micron Technology, Inc. Increased interior volume for integrated memory cell
US6027970A (en) * 1996-05-17 2000-02-22 Micron Technology, Inc. Method of increasing capacitance of memory cells incorporating hemispherical grained silicon

Also Published As

Publication number Publication date
KR100200705B1 (ko) 1999-06-15
US6039811A (en) 2000-03-21
JPH1055973A (ja) 1998-02-24
JP4422217B2 (ja) 2010-02-24
US6221742B1 (en) 2001-04-24
KR980005399A (ko) 1998-03-30

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees