TW341731B - Epitaxial wafer and production thereof - Google Patents
Epitaxial wafer and production thereofInfo
- Publication number
- TW341731B TW341731B TW085110661A TW85110661A TW341731B TW 341731 B TW341731 B TW 341731B TW 085110661 A TW085110661 A TW 085110661A TW 85110661 A TW85110661 A TW 85110661A TW 341731 B TW341731 B TW 341731B
- Authority
- TW
- Taiwan
- Prior art keywords
- epitaxial wafer
- production
- coating layer
- inn
- aln
- Prior art date
Links
- 239000011247 coating layer Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02392—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Led Devices (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25707095A JPH0983017A (ja) | 1995-09-08 | 1995-09-08 | エピタキシャルウェハおよびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW341731B true TW341731B (en) | 1998-10-01 |
Family
ID=17301334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085110661A TW341731B (en) | 1995-09-08 | 1996-08-31 | Epitaxial wafer and production thereof |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6031252A (zh) |
| JP (1) | JPH0983017A (zh) |
| KR (1) | KR100243623B1 (zh) |
| TW (1) | TW341731B (zh) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6344375B1 (en) * | 1998-07-28 | 2002-02-05 | Matsushita Electric Industrial Co., Ltd | Substrate containing compound semiconductor, method for manufacturing the same and semiconductor device using the same |
| JP3262080B2 (ja) * | 1998-09-25 | 2002-03-04 | 株式会社村田製作所 | 半導体発光素子 |
| JP4522301B2 (ja) * | 2005-03-30 | 2010-08-11 | 住友電工デバイス・イノベーション株式会社 | 半導体基板および半導体装置 |
| EP1965416A3 (en) * | 2005-12-22 | 2009-04-29 | Freiberger Compound Materials GmbH | Free-Standing III-N layers or devices obtained by selective masking of III-N layers during III-N layer growth |
| US7585769B2 (en) * | 2006-05-05 | 2009-09-08 | Applied Materials, Inc. | Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE |
| JP2008034510A (ja) * | 2006-07-27 | 2008-02-14 | Showa Denko Kk | Ｉｉｉ族窒化物化合物半導体発光素子及びその製造方法、並びにランプ |
| WO2009001833A1 (ja) * | 2007-06-26 | 2008-12-31 | Sumco Corporation | エピタキシャルウェーハおよびその製造方法 |
| US9245736B2 (en) * | 2013-03-15 | 2016-01-26 | Semiconductor Components Industries, Llc | Process of forming a semiconductor wafer |
| US9620461B2 (en) * | 2014-06-09 | 2017-04-11 | Globalwafers Co., Ltd. | Laminar structure of semiconductor and manufacturing method thereof |
| KR102179974B1 (ko) * | 2018-08-03 | 2020-11-17 | 안형수 | 질화물 코팅막 형성 장치 및 방법 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3675619A (en) * | 1969-02-25 | 1972-07-11 | Monsanto Co | Apparatus for production of epitaxial films |
| US3933538A (en) * | 1972-01-18 | 1976-01-20 | Sumitomo Electric Industries, Ltd. | Method and apparatus for production of liquid phase epitaxial layers of semiconductors |
| US4833103A (en) * | 1987-06-16 | 1989-05-23 | Eastman Kodak Company | Process for depositing a III-V compound layer on a substrate |
| JPH088217B2 (ja) * | 1991-01-31 | 1996-01-29 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体の結晶成長方法 |
| TW290743B (zh) * | 1995-03-27 | 1996-11-11 | Sumitomo Electric Industries |
-
1995
- 1995-09-08 JP JP25707095A patent/JPH0983017A/ja not_active Withdrawn
-
1996
- 1996-08-29 US US08/705,330 patent/US6031252A/en not_active Expired - Fee Related
- 1996-08-31 TW TW085110661A patent/TW341731B/zh not_active IP Right Cessation
- 1996-09-06 KR KR1019960038575A patent/KR100243623B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0983017A (ja) | 1997-03-28 |
| KR970017991A (ko) | 1997-04-30 |
| KR100243623B1 (ko) | 2000-02-01 |
| US6031252A (en) | 2000-02-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |