TW338188B - Output circuit - Google Patents
Output circuitInfo
- Publication number
- TW338188B TW338188B TW085111054A TW85111054A TW338188B TW 338188 B TW338188 B TW 338188B TW 085111054 A TW085111054 A TW 085111054A TW 85111054 A TW85111054 A TW 85111054A TW 338188 B TW338188 B TW 338188B
- Authority
- TW
- Taiwan
- Prior art keywords
- potential
- pull
- circuit
- control signal
- output
- Prior art date
Links
Landscapes
- Logic Circuits (AREA)
- Electronic Switches (AREA)
Abstract
An output circuit featuring the first potential as input signal of the circuit of the power potential for input and, based on the output circuit of the circuit and the second potential for power supply and other circuit output signals, featuring: signal generator circuit, for the first and the second control signals according to the output signal of said circuit for the first potential and the grounding potential in difference of undulation; voltage change circuit with the first control signal produced by said signal generator circuit for input and by change of the undulation of the first control signal for pulling up the control signal for output; pull-up circuit, with the pull-up control signal from the voltage change citcuit for input and based on the indication of the pull-up control signal for the control of the potential of the output to determine its pull-up to the second potential; and pull down circuit, with the second control signal generated by the signal generator for input of pull down signal and based on the indication of the pull-down control signal for the control of the potential of the output to determine its pull-down to the grounding potential; said pull-up circuit having the P-type MOS transistor for the supply of the second potential to the power supply and input of the pull-up control signal of the gate and in the connection of the power supply to the said P-type MOS transistor drain, making the drain be connected to the output as the second P-type MOS transistor on the third potential gate; said pull-down circuit having the P-type MOS transistor for the supply of the second potential to the power supply and input of the pull-up control signal of the gate and in the connection of the power supply to the said S N-type MOS transistor drain, making the drain be connected to the output as the first N-type MOS transistor on the third potential gate; said voltage change circuit indicating when the pull-up circuit pulls up the output potential to the second potential,the pull-up control signal potential making it to second potential deducting the 1 P-type MOS transistor critical value and make the second potential deduct the P-type MOS transistor gate oxidized membrane to over relevant voltage, without indicating the pull-up circuit to the second potential by keeping the pull-up control signal potential as the second potential.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24289495 | 1995-09-21 | ||
JP21826196A JP3530315B2 (en) | 1995-09-21 | 1996-08-20 | Output circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
TW338188B true TW338188B (en) | 1998-08-11 |
Family
ID=26522477
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085111054A TW338188B (en) | 1995-09-21 | 1996-09-10 | Output circuit |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP3530315B2 (en) |
TW (1) | TW338188B (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5917358A (en) * | 1997-12-09 | 1999-06-29 | Motorola, Inc. | Method and output buffer with programmable bias to accommodate multiple supply voltages |
JP2009147985A (en) * | 2001-08-31 | 2009-07-02 | Renesas Technology Corp | Semiconductor device |
US7145364B2 (en) * | 2005-02-25 | 2006-12-05 | Agere Systems Inc. | Self-bypassing voltage level translator circuit |
US7605618B2 (en) * | 2006-01-12 | 2009-10-20 | Qualcomm, Incorporated | Digital output driver and input buffer using thin-oxide field effect transistors |
JP4724575B2 (en) * | 2006-03-03 | 2011-07-13 | Okiセミコンダクタ株式会社 | Level conversion circuit |
JP5095184B2 (en) * | 2006-11-22 | 2012-12-12 | フリースケール セミコンダクター インコーポレイテッド | Level shifter circuit |
JP2008199153A (en) * | 2007-02-09 | 2008-08-28 | Matsushita Electric Ind Co Ltd | Level shifter |
JP5966402B2 (en) * | 2012-02-10 | 2016-08-10 | 凸版印刷株式会社 | Semiconductor integrated circuit |
JP5838141B2 (en) * | 2012-02-27 | 2015-12-24 | ルネサスエレクトロニクス株式会社 | Semiconductor integrated circuit |
JP5886112B2 (en) * | 2012-04-11 | 2016-03-16 | ルネサスエレクトロニクス株式会社 | Semiconductor integrated circuit device, level shift circuit |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0637624A (en) * | 1992-07-13 | 1994-02-10 | Nec Corp | Level conversion circuit |
JPH0774616A (en) * | 1993-07-06 | 1995-03-17 | Seiko Epson Corp | Signal voltage level converting circuit and output buffer circuit |
JP2901171B2 (en) * | 1993-10-08 | 1999-06-07 | 日本電信電話株式会社 | Deep submicron MOSFET output buffer circuit |
US5493244A (en) * | 1994-01-13 | 1996-02-20 | Atmel Corporation | Breakdown protection circuit using high voltage detection |
-
1996
- 1996-08-20 JP JP21826196A patent/JP3530315B2/en not_active Expired - Fee Related
- 1996-09-10 TW TW085111054A patent/TW338188B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP3530315B2 (en) | 2004-05-24 |
JPH09148915A (en) | 1997-06-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |