TW329537B - Anti-reflective composition comprising germanium and method for fabrication a pattern - Google Patents
Anti-reflective composition comprising germanium and method for fabrication a patternInfo
- Publication number
- TW329537B TW329537B TW086109084A TW86109084A TW329537B TW 329537 B TW329537 B TW 329537B TW 086109084 A TW086109084 A TW 086109084A TW 86109084 A TW86109084 A TW 86109084A TW 329537 B TW329537 B TW 329537B
- Authority
- TW
- Taiwan
- Prior art keywords
- germanium
- fabrication
- pattern
- reflective composition
- composition
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960034761A KR100219550B1 (ko) | 1996-08-21 | 1996-08-21 | 반사방지막 및 이를 이용한 패턴형성방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW329537B true TW329537B (en) | 1998-04-11 |
Family
ID=19470350
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086109084A TW329537B (en) | 1996-08-21 | 1997-06-28 | Anti-reflective composition comprising germanium and method for fabrication a pattern |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPH1092742A (zh) |
KR (1) | KR100219550B1 (zh) |
TW (1) | TW329537B (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100451041B1 (ko) * | 1997-06-27 | 2004-12-04 | 주식회사 하이닉스반도체 | 반도체소자의금속배선형성방법 |
KR100307629B1 (ko) * | 1999-04-30 | 2001-09-26 | 윤종용 | 하이드로 카본계의 가스를 이용한 반사방지막의 형성 및 적용방법 |
KR100807521B1 (ko) * | 2006-08-23 | 2008-02-26 | 동부일렉트로닉스 주식회사 | 반도체 소자 제조 방법 |
JP5656010B2 (ja) * | 2009-12-04 | 2015-01-21 | ノベラス・システムズ・インコーポレーテッドNovellus Systems Incorporated | ハードマスク膜を形成する方法およびハードマスク膜を成膜する装置 |
KR101314515B1 (ko) * | 2010-01-28 | 2013-10-02 | 연세대학교 산학협력단 | 이종재료 반사방지 미세구조물을 갖는 적외선 광학계용 광소자 및 이의 제조방법 |
US9234276B2 (en) | 2013-05-31 | 2016-01-12 | Novellus Systems, Inc. | Method to obtain SiC class of films of desired composition and film properties |
US10325773B2 (en) | 2012-06-12 | 2019-06-18 | Novellus Systems, Inc. | Conformal deposition of silicon carbide films |
US10832904B2 (en) | 2012-06-12 | 2020-11-10 | Lam Research Corporation | Remote plasma based deposition of oxygen doped silicon carbide films |
US10297442B2 (en) | 2013-05-31 | 2019-05-21 | Lam Research Corporation | Remote plasma based deposition of graded or multi-layered silicon carbide film |
US20160314964A1 (en) | 2015-04-21 | 2016-10-27 | Lam Research Corporation | Gap fill using carbon-based films |
US10002787B2 (en) | 2016-11-23 | 2018-06-19 | Lam Research Corporation | Staircase encapsulation in 3D NAND fabrication |
-
1996
- 1996-08-21 KR KR1019960034761A patent/KR100219550B1/ko not_active IP Right Cessation
-
1997
- 1997-06-28 TW TW086109084A patent/TW329537B/zh active
- 1997-08-04 JP JP9209135A patent/JPH1092742A/ja not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
JPH1092742A (ja) | 1998-04-10 |
KR100219550B1 (ko) | 1999-09-01 |
KR19980015458A (ko) | 1998-05-25 |
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