TW329537B - Anti-reflective composition comprising germanium and method for fabrication a pattern - Google Patents

Anti-reflective composition comprising germanium and method for fabrication a pattern

Info

Publication number
TW329537B
TW329537B TW086109084A TW86109084A TW329537B TW 329537 B TW329537 B TW 329537B TW 086109084 A TW086109084 A TW 086109084A TW 86109084 A TW86109084 A TW 86109084A TW 329537 B TW329537 B TW 329537B
Authority
TW
Taiwan
Prior art keywords
germanium
fabrication
pattern
reflective composition
composition
Prior art date
Application number
TW086109084A
Other languages
English (en)
Inventor
Kim Dong-Wan
Kang Ho-Young
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW329537B publication Critical patent/TW329537B/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • H01L21/0276Photolithographic processes using an anti-reflective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW086109084A 1996-08-21 1997-06-28 Anti-reflective composition comprising germanium and method for fabrication a pattern TW329537B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960034761A KR100219550B1 (ko) 1996-08-21 1996-08-21 반사방지막 및 이를 이용한 패턴형성방법

Publications (1)

Publication Number Publication Date
TW329537B true TW329537B (en) 1998-04-11

Family

ID=19470350

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086109084A TW329537B (en) 1996-08-21 1997-06-28 Anti-reflective composition comprising germanium and method for fabrication a pattern

Country Status (3)

Country Link
JP (1) JPH1092742A (zh)
KR (1) KR100219550B1 (zh)
TW (1) TW329537B (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100451041B1 (ko) * 1997-06-27 2004-12-04 주식회사 하이닉스반도체 반도체소자의금속배선형성방법
KR100307629B1 (ko) * 1999-04-30 2001-09-26 윤종용 하이드로 카본계의 가스를 이용한 반사방지막의 형성 및 적용방법
KR100807521B1 (ko) * 2006-08-23 2008-02-26 동부일렉트로닉스 주식회사 반도체 소자 제조 방법
JP5656010B2 (ja) * 2009-12-04 2015-01-21 ノベラス・システムズ・インコーポレーテッドNovellus Systems Incorporated ハードマスク膜を形成する方法およびハードマスク膜を成膜する装置
KR101314515B1 (ko) * 2010-01-28 2013-10-02 연세대학교 산학협력단 이종재료 반사방지 미세구조물을 갖는 적외선 광학계용 광소자 및 이의 제조방법
US9234276B2 (en) 2013-05-31 2016-01-12 Novellus Systems, Inc. Method to obtain SiC class of films of desired composition and film properties
US10325773B2 (en) 2012-06-12 2019-06-18 Novellus Systems, Inc. Conformal deposition of silicon carbide films
US10832904B2 (en) 2012-06-12 2020-11-10 Lam Research Corporation Remote plasma based deposition of oxygen doped silicon carbide films
US10297442B2 (en) 2013-05-31 2019-05-21 Lam Research Corporation Remote plasma based deposition of graded or multi-layered silicon carbide film
US20160314964A1 (en) 2015-04-21 2016-10-27 Lam Research Corporation Gap fill using carbon-based films
US10002787B2 (en) 2016-11-23 2018-06-19 Lam Research Corporation Staircase encapsulation in 3D NAND fabrication

Also Published As

Publication number Publication date
JPH1092742A (ja) 1998-04-10
KR100219550B1 (ko) 1999-09-01
KR19980015458A (ko) 1998-05-25

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