EP0887846A3 - Method of reducing the formation of watermarks on semiconductor wafers - Google Patents

Method of reducing the formation of watermarks on semiconductor wafers Download PDF

Info

Publication number
EP0887846A3
EP0887846A3 EP98109961A EP98109961A EP0887846A3 EP 0887846 A3 EP0887846 A3 EP 0887846A3 EP 98109961 A EP98109961 A EP 98109961A EP 98109961 A EP98109961 A EP 98109961A EP 0887846 A3 EP0887846 A3 EP 0887846A3
Authority
EP
European Patent Office
Prior art keywords
reducing
formation
watermarks
semiconductor wafers
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP98109961A
Other languages
German (de)
French (fr)
Other versions
EP0887846A2 (en
Inventor
Ravikumar Ramachandran
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP0887846A2 publication Critical patent/EP0887846A2/en
Publication of EP0887846A3 publication Critical patent/EP0887846A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)

Abstract

A method for reducing the formation of watermarks includes providing a semiconductor wafer and contacting the semiconductor wafer with a solution containing a watermark reducing amount of at least one cationic surfactant.
EP98109961A 1997-06-25 1998-06-02 Method of reducing the formation of watermarks on semiconductor wafers Withdrawn EP0887846A3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US882057 1997-06-25
US08/882,057 US6074935A (en) 1997-06-25 1997-06-25 Method of reducing the formation of watermarks on semiconductor wafers

Publications (2)

Publication Number Publication Date
EP0887846A2 EP0887846A2 (en) 1998-12-30
EP0887846A3 true EP0887846A3 (en) 1999-09-15

Family

ID=25379798

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98109961A Withdrawn EP0887846A3 (en) 1997-06-25 1998-06-02 Method of reducing the formation of watermarks on semiconductor wafers

Country Status (6)

Country Link
US (1) US6074935A (en)
EP (1) EP0887846A3 (en)
JP (1) JPH1174246A (en)
KR (1) KR19990007314A (en)
CN (1) CN1203441A (en)
TW (1) TW383415B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3550507B2 (en) * 1999-03-25 2004-08-04 Ｎｅｃエレクトロニクス株式会社 Method and apparatus for rinsing object to be cleaned
US6468362B1 (en) * 1999-08-25 2002-10-22 Applied Materials, Inc. Method and apparatus for cleaning/drying hydrophobic wafers
US7456113B2 (en) * 2000-06-26 2008-11-25 Applied Materials, Inc. Cleaning method and solution for cleaning a wafer in a single wafer process
US6927176B2 (en) * 2000-06-26 2005-08-09 Applied Materials, Inc. Cleaning method and solution for cleaning a wafer in a single wafer process
US6706207B2 (en) * 2002-05-07 2004-03-16 The United States Of America As Represented By The Secretary Of The Navy Non-chromate metal surface etching solutions
US20040002430A1 (en) * 2002-07-01 2004-01-01 Applied Materials, Inc. Using a time critical wafer cleaning solution by combining a chelating agent with an oxidizer at point-of-use
US7018937B2 (en) * 2002-08-29 2006-03-28 Micron Technology, Inc. Compositions for removal of processing byproducts and method for using same
CN102007196B (en) * 2008-03-07 2014-10-29 高级技术材料公司 Non-selective oxide etch wet clean composition and method of use
JP5152851B2 (en) * 2008-04-17 2013-02-27 国立大学法人東北大学 Manufacturing method of semiconductor device
CN102969221A (en) * 2011-08-31 2013-03-13 上海华力微电子有限公司 Wafer cleaning method capable of reducing water mark defects and manufacturing method of semiconductor devices
CN110867373B (en) * 2018-08-28 2023-02-17 中国科学院微电子研究所 High-precision etching method
WO2020042254A1 (en) 2018-08-28 2020-03-05 中国科学院微电子研究所 High-precision etching method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2526052A1 (en) * 1975-06-11 1976-12-30 Wacker Chemitronic METHOD OF CLEANING POLISHED SEMI-CONDUCTIVE DISCS
US4795582A (en) * 1986-09-29 1989-01-03 Hashimoto Chemical Industries Co., Ltd. Surface treating composition for micro processing
EP0499830A2 (en) * 1991-02-18 1992-08-26 Riedel-De Haen Aktiengesellschaft Etching solution for wet processes in semiconducteur fabrication
DE4117489A1 (en) * 1991-05-28 1992-12-03 Siemens Ag Chemical polishing of surfaces of high temp. ceramic superconductors - using dilute acid which is further diluted and removed followed by rinsing with solvent

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3834396A1 (en) * 1988-10-10 1990-04-12 Telefunken Electronic Gmbh Method for removing surface layers
US5503681A (en) * 1990-03-16 1996-04-02 Kabushiki Kaisha Toshiba Method of cleaning an object
US5593507A (en) * 1990-08-22 1997-01-14 Kabushiki Kaisha Toshiba Cleaning method and cleaning apparatus
US5259888A (en) * 1992-02-03 1993-11-09 Sachem, Inc. Process for cleaning quartz and silicon surfaces
US5628833A (en) * 1994-10-13 1997-05-13 Dow Corning Corporation Two-step cleaning or dewatering with siloxane azeotropes
US5803980A (en) * 1996-10-04 1998-09-08 Texas Instruments Incorporated De-ionized water/ozone rinse post-hydrofluoric processing for the prevention of silicic acid residue
US5807439A (en) * 1997-09-29 1998-09-15 Siemens Aktiengesellschaft Apparatus and method for improved washing and drying of semiconductor wafers

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2526052A1 (en) * 1975-06-11 1976-12-30 Wacker Chemitronic METHOD OF CLEANING POLISHED SEMI-CONDUCTIVE DISCS
US4795582A (en) * 1986-09-29 1989-01-03 Hashimoto Chemical Industries Co., Ltd. Surface treating composition for micro processing
EP0499830A2 (en) * 1991-02-18 1992-08-26 Riedel-De Haen Aktiengesellschaft Etching solution for wet processes in semiconducteur fabrication
DE4117489A1 (en) * 1991-05-28 1992-12-03 Siemens Ag Chemical polishing of surfaces of high temp. ceramic superconductors - using dilute acid which is further diluted and removed followed by rinsing with solvent

Also Published As

Publication number Publication date
EP0887846A2 (en) 1998-12-30
JPH1174246A (en) 1999-03-16
CN1203441A (en) 1998-12-30
TW383415B (en) 2000-03-01
KR19990007314A (en) 1999-01-25
US6074935A (en) 2000-06-13

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